VFBGA DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
MT46H256M32L4LE-48WT:C	Micron Technology	LPDDR1 DRAM	OTHER	168	VFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel		256MX32	256M	-25 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B168	1.95 V	1 mm		12 mm		8589934592 bit	1.7 V	AUTO/SELF REFRESH	e1					12 mm	5 ns
MT46H64M16LFBF-6IT:B	Micron Technology	DDR1 DRAM	INDUSTRIAL	60	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	120 mA	67108864 words	2,4,8,16	YES	COMMON	1.8	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA60,9X10,32	DRAMs	.8 mm	85 Cel	3-STATE	64MX16	64M	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B60	1.95 V	1 mm	166 MHz	8 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH	e1	30	260	.00001 Amp	2,4,8,16	9 mm	5 ns
MT46H64M16LFBF-6IT:BTR	Micron Technology	DDR1 DRAM	INDUSTRIAL	60	VFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		YES		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel		64MX16	64M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60	1.95 V	1 mm		8 mm		1073741824 bit	1.7 V	AUTO/SELF REFRESH	e1					9 mm	5 ns
W631GG6NB-11	Winbond Electronics	DDR3 DRAM	OTHER	96	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	240 mA	67108864 words	8	YES	COMMON	1.5		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	95 Cel	3-STATE	64MX16	64M	0 Cel		BOTTOM	1	R-PBGA-B96	1.575 V	1 mm	933 MHz	7.5 mm		1073741824 bit	1.425 V					.045 Amp	8	13 mm	20 ns
W631GG6NB11I	Winbond Electronics	DDR3 DRAM	INDUSTRIAL	96	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	240 mA	67108864 words	8	YES	COMMON	1.5		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	95 Cel	3-STATE	64MX16	64M	-40 Cel		BOTTOM	1	R-PBGA-B96	1.575 V	1 mm	933 MHz	7.5 mm		1073741824 bit	1.425 V					.045 Amp	8	13 mm	20 ns
IS43LQ16128A-062BLI	Integrated Silicon Solution	LPDDR4 DRAM	INDUSTRIAL	200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words	16,32	NO	COMMON			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25		.8 mm	95 Cel		128MX16	128M	-40 Cel		BOTTOM	1	R-PBGA-B200	1.95 V	.85 mm	1600 MHz	10 mm		2147483648 bit	1.7 V	terminal pitch-max					16,32	14.5 mm
MT42L64M32D2HE-18AAT:D	Micron Technology	LPDDR2 DRAM		134	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	400 mA	67108864 words	4,8,16	YES	COMMON	1.2		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA134,10X17,25		.65 mm	105 Cel	3-STATE	64MX32	64M	-40 Cel		BOTTOM	1	R-PBGA-B134	1.3 V	1 mm	533 MHz	10 mm		2147483648 bit	1.14 V					.01 Amp	4,8,16	11.5 mm
MT42L64M32D2HE-18AUT:D	Micron Technology	LPDDR2 DRAM		134	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	400 mA	67108864 words	4,8,16	YES	COMMON	1.2		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA134,10X17,25		.65 mm	125 Cel	3-STATE	64MX32	64M	-40 Cel		BOTTOM	1	R-PBGA-B134	1.3 V	1 mm	533 MHz	10 mm		2147483648 bit	1.14 V					.01 Amp	4,8,16	11.5 mm
MT46H128M16LFB7-6IT:B	Micron Technology	DDR1 DRAM	INDUSTRIAL	60	VFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words		YES		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel		128MX16	128M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B60	1.95 V	1 mm		10 mm		2147483648 bit	1.7 V	AUTO/SELF REFRESH	e1					10 mm	5 ns
MT46H128M16LFDD-48IT:C	Micron Technology	LPDDR1 DRAM	INDUSTRIAL	60	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	90 mA	134217728 words	2,4,8,16	YES	COMMON	1.8	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA60,9X10,32	DRAMs	.8 mm	85 Cel	3-STATE	128MX16	128M	-40 Cel		BOTTOM	1	R-PBGA-B60	1.95 V	1 mm	208 MHz	8 mm	Not Qualified	2147483648 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.00001 Amp	2,4,8,16	9 mm	4.8 ns
MT46H128M32L2MC-5WT:B	Micron Technology	DDR1 DRAM	OTHER	240	VFBGA	8192	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	150 mA	134217728 words	2,4,8,16	YES	COMMON	1.8	1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA240,27X27,20	DRAMs	.5 mm	85 Cel	3-STATE	128MX32	128M	-20 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	S-PBGA-B240	1.95 V	.8 mm	200 MHz	14 mm	Not Qualified	4294967296 bit	1.7 V	AUTO/SELF REFRESH	e1			.00001 Amp	2,4,8,16	14 mm	5 ns
MT46H128M32L2MC-6WT:B	Micron Technology	DDR1 DRAM	OTHER	240	VFBGA	8192	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	140 mA	134217728 words	2,4,8,16	YES	COMMON	1.8	1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA240,27X27,20	DRAMs	.5 mm	85 Cel	3-STATE	128MX32	128M	-20 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	S-PBGA-B240	1.95 V	.8 mm	166 MHz	14 mm	Not Qualified	4294967296 bit	1.7 V	AUTO/SELF REFRESH	e1			.00001 Amp	2,4,8,16	14 mm	5 ns
MT46H32M16LFBF-6AIT:C	Micron Technology	DDR1 DRAM	INDUSTRIAL	60	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	105 mA	33554432 words	2,4,8,16	YES	COMMON	1.8	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA60,9X10,32	DRAMs	.8 mm	85 Cel	3-STATE	32MX16	32M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60	1.95 V	1 mm	166 MHz	8 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e1			.00001 Amp	2,4,8,16	9 mm	5 ns
MT46H32M16LFBF-6AT:C	Micron Technology	DDR1 DRAM	INDUSTRIAL	60	VFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		33554432 words		YES		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	105 Cel		32MX16	32M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60	1.95 V	1 mm		8 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e1					9 mm	5 ns
MT46H32M16LFBF-6LIT:B	Micron Technology	DDR1 DRAM	INDUSTRIAL	60	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	105 mA	33554432 words	2,4,8,16	YES	COMMON	1.8	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA60,9X10,32	DRAMs	.8 mm	85 Cel	3-STATE	32MX16	32M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60	1.95 V	1 mm	166 MHz	8 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e1			.00001 Amp	2,4,8,16	9 mm	6 ns
MT46H64M16LFBF-5AIT:B	Micron Technology	DDR1 DRAM	INDUSTRIAL	60	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	135 mA	67108864 words	2,4,8,16	YES	COMMON	1.8	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA60,9X10,32	DRAMs	.8 mm	85 Cel	3-STATE	64MX16	64M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60	1.95 V	1 mm	200 MHz	8 mm		1073741824 bit	1.7 V	AUTO/SELF REFRESH	e1			.00001 Amp	2,4,8,16	9 mm	5 ns
MT48LC4M32B2B5-6A:L	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	90	VFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		4194304 words		YES		3.3		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	70 Cel		4MX32	4M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B90	3.6 V	1 mm		8 mm		134217728 bit	3 V	AUTO/SELF REFRESH	e1					13 mm	5.4 ns
MT48LC4M32B2B5-6A:LTR	Micron Technology	SYNCHRONOUS DRAM		90	VFBGA	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	180 mA	4194304 words	1,2,4,8,FP	YES	COMMON	3.3		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA90,9X15,32		.8 mm	70 Cel	3-STATE	4MX32	4M	0 Cel		BOTTOM	1	R-PBGA-B90	3.6 V	1 mm	167 MHz	8 mm		134217728 bit	3 V	AUTO/SELF REFRESH				.0025 Amp	1,2,4,8	13 mm	5.4 ns
MT53B256M32D1DS-062AAT:C	Micron Technology	LPDDR4 DRAM	INDUSTRIAL	200	VFBGA	16384	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	410 mA	268435456 words	16,32	YES	COMMON	1.1		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25		.8 mm	105 Cel		256MX32	256M	-40 Cel		BOTTOM	1	R-PBGA-B200	1.17 V	.8 mm	1600 MHz	10 mm		8589934592 bit	1.06 V	SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX				.0033 Amp	16,32	14.5 mm
MT53E256M32D1KS-046AAT:L	Micron Technology	LPDDR4 DRAM		200	VFBGA	32768	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100, ISO 26262	BALL	SYNCHRONOUS	42.3 mA	268435456 words	16,32	YES	COMMON	1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X20,32/25		.8 mm	105 Cel		256MX32	256M	-40 Cel		BOTTOM	1	R-PBGA-B200	1.95 V	.95 mm	2133 MHz	10 mm		8589934592 bit	1.7 V	SELF REFRESH, IT ALSO REQUIRES 1.1V NOMINAL SUPPLY				.0009 Amp	16,32	14.5 mm
MT60B1G16HC-48B:A	Micron Technology	DDR5 DRAM		102	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words		YES	COMMON	1.1		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA102,9X17,32		.8 mm	95 Cel	3-STATE	1GX16	1G	0 Cel		BOTTOM	1	R-PBGA-B102		1 mm	2403.8 MHz	9 mm		17179869184 bit		SELF REFRESH						14 mm
MT42L256M32D4KP-25IT:A	Micron Technology	LPDDR2 DRAM		168	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm			256MX32	256M			BOTTOM	1	S-PBGA-B168	1.95 V	1 mm		12 mm		8589934592 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						12 mm
MT46H128M32L2KQ-6WT:B	Micron Technology	DDR1 DRAM	OTHER	168	VFBGA	8192	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	140 mA	134217728 words	2,4,8,16	YES	COMMON	1.8	1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA168,23X23,20	DRAMs	.5 mm	85 Cel	3-STATE	128MX32	128M	-20 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	S-PBGA-B168	1.95 V	.75 mm	166 MHz	12 mm	Not Qualified	4294967296 bit	1.7 V	AUTO/SELF REFRESH	e1			.00001 Amp	2,4,8,16	12 mm	5 ns
MT46H32M32LFB5-6IT:B	Micron Technology	DDR1 DRAM	INDUSTRIAL	90	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	135 mA	33554432 words	2,4,8,16	YES	COMMON	1.8	1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	32MX32	32M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B90	1.95 V	1 mm	166 MHz	8 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH	e1			.00001 Amp	2,4,8,16	13 mm	5 ns
MT48LC16M16A2B4-6AAAT:G	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	54	VFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		16777216 words				3.3		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	105 Cel		16MX16	16M	-40 Cel		BOTTOM	1	S-PBGA-B54	3.6 V	1 mm		8 mm		268435456 bit	3 V	AUTO REFRESH		NOT SPECIFIED	NOT SPECIFIED			8 mm	5.4 ns
MT48LC16M16A2BG-75:D	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	54	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	270 mA	16777216 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	16MX16	16M	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B54	3.6 V	1 mm	133 MHz	8 mm	Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH	e1	30	260	.002 Amp	1,2,4,8	14 mm	5.4 ns
MT48LC4M32B2B5-7:G	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	90	VFBGA	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	320 mA	4194304 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX32	4M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B90	3.6 V	1 mm	143 MHz	8 mm	Not Qualified	134217728 bit	3 V	AUTO/SELF REFRESH	e1			.002 Amp	1,2,4,8	13 mm	5.5 ns
MT53D1024M32D4DT-046AUT:D	Micron Technology	LPDDR4 DRAM		200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		1073741824 words	16,32	YES	COMMON	1.1		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25		.8 mm	125 Cel		1GX32	1G	-40 Cel		BOTTOM	1	R-PBGA-B200	1.17 V	.95 mm	2136.7 MHz	10 mm		34359738368 bit	1.06 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAX					16,32	14.5 mm
MT53E1536M32D4DT-046AIT:A	Micron Technology	LPDDR4 DRAM		200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		1610612736 words	16,32	YES	COMMON	1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25		.8 mm	95 Cel		1536MX32	1536M	-40 Cel		BOTTOM	1	R-PBGA-B200	1.95 V	.95 mm	2136.7 MHz	10 mm		51539607552 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM					16,32	14.5 mm
NT5CC256M16DP-DII	Nanya Technology	DDR3L DRAM	INDUSTRIAL	96	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.35		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel		256MX16	256M	-40 Cel		BOTTOM	1	R-PBGA-B96	1.45 V	1 mm		9 mm		4294967296 bit	1.283 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			13 mm
W632GU6NB11I	Winbond Electronics	DDR3L DRAM	INDUSTRIAL	96	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words				1.35		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	95 Cel		128MX16	128M	-40 Cel		BOTTOM	1	R-PBGA-B96	1.45 V	1 mm		7.5 mm		2147483648 bit	1.283 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			13 mm
AS4C16M32MS-7BCN	Alliance Memory	SYNCHRONOUS DRAM	OTHER	90	VFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel		16MX32	16M	-25 Cel		BOTTOM	1	R-PBGA-B90	1.95 V	1 mm		8 mm		536870912 bit	1.7 V	AUTO/SELF REFRESH						13 mm	5.4 ns
M12L64164A-5BIG2Y	Elite Semiconductor Microelectronics Technologyinc	SYNCHRONOUS DRAM	INDUSTRIAL	54	VFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		4194304 words		YES		3.3		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel		4MX16	4M	-40 Cel		BOTTOM	1	S-PBGA-B54	3.6 V	1 mm		8 mm		67108864 bit	3 V	AUTO/SELF REFRESH						8 mm	5 ns
MT46H32M16LFBF-6AT:B	Micron Technology	DDR1 DRAM	INDUSTRIAL	60	VFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		33554432 words		YES		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	105 Cel		32MX16	32M	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B60	1.95 V	1 mm		8 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e1	30	260			9 mm	5 ns
MT48LC16M16A2BG-75IT:DTR	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	54	VFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words		YES		3.3		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel		16MX16	16M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B54	3.6 V	1 mm		8 mm	Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH	e1					14 mm	5.4 ns
MT48LC4M16A2B4-6AIT:J	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	54	VFBGA	4096	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	150 mA	4194304 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	85 Cel	3-STATE	4MX16	4M	-40 Cel		BOTTOM	1	S-PBGA-B54	3.6 V	1 mm	167 MHz	8 mm	Not Qualified	67108864 bit	3 V	AUTO/SELF REFRESH				.0025 Amp	1,2,4,8	8 mm	5.4 ns
MT53E256M32D1KS-046AIT:L	Micron Technology	LPDDR4 DRAM		200	VFBGA	32768	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100, ISO 26262	BALL	SYNCHRONOUS	39.1 mA	268435456 words	16,32	YES	COMMON	1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X20,32/25		.8 mm	95 Cel		256MX32	256M	-40 Cel		BOTTOM	1	R-PBGA-B200	1.95 V	.95 mm	2133 MHz	10 mm		8589934592 bit	1.7 V	SELF REFRESH, IT ALSO REQUIRES 1.1V NOMINAL SUPPLY				.0008 Amp	16,32	14.5 mm
MT53E768M32D4DT-053AIT:E	Micron Technology	LPDDR4 DRAM	INDUSTRIAL	200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		805306368 words	16,32	YES	COMMON	1.1		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X20,32/25		.8 mm	95 Cel	3-STATE	768MX32	768M	-40 Cel		BOTTOM	1	R-PBGA-B200	1.17 V	.95 mm	1866 MHz	10 mm		25769803776 bit	1.06 V	SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX		NOT SPECIFIED	NOT SPECIFIED		16,32	14.5 mm
NT5CC128M16IP-DII	Nanya Technology	DDR3L DRAM	INDUSTRIAL	96	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words		YES		1.35		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel		128MX16	128M	-40 Cel		BOTTOM	1	R-PBGA-B96	1.45 V	1 mm		8 mm		2147483648 bit	1.283 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			13 mm
NT6AN256T32AV-J2	Nanya Technology	LPDDR4 DRAM	OTHER	200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words	16,32	YES	COMMON	1.1		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25		.8 mm	105 Cel	3-STATE	256MX32	256M	-30 Cel		BOTTOM	1	R-PBGA-B200	1.17 V	.83 mm	1866 MHz	10 mm		8589934592 bit	1.06 V	AUTO/SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY VOLTAGE					16,32	15 mm
NT6CL512T32AM-H1	Nanya Technology	DDR3L DRAM	OTHER	178	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words	8	YES	COMMON	1.2		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA178,13X17,32/25		.8 mm	105 Cel	3-STATE	512MX32	512M	-30 Cel		BOTTOM	1	R-PBGA-B178	1.3 V	.83 mm	933 MHz	10.5 mm		17179869184 bit	1.14 V							11.5 mm
NT6DM32M16BD-T1	Nanya Technology	DDR1 DRAM	OTHER	60	VFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		33554432 words		YES		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel		32MX16	32M	-25 Cel		BOTTOM	1	R-PBGA-B60	1.95 V	1 mm		8 mm		536870912 bit	1.7 V	AUTO/SELF REFRESH						9 mm	5 ns
NT6DM32M16BD-T1I	Nanya Technology	DDR1 DRAM	INDUSTRIAL	60	VFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		33554432 words		YES		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel		32MX16	32M	-40 Cel		BOTTOM	1	R-PBGA-B60	1.95 V	1 mm		8 mm		536870912 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			9 mm	5 ns
W631GU6MB-12	Winbond Electronics	DDR3L DRAM	OTHER	96	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		YES		1.35		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	95 Cel		64MX16	64M	0 Cel		BOTTOM	1	R-PBGA-B96	1.45 V	1 mm		7.5 mm		1073741824 bit	1.283 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			13 mm
W631GU6MB12I	Winbond Electronics	DDR3L DRAM	INDUSTRIAL	96	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		YES		1.35		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	95 Cel		64MX16	64M	-40 Cel		BOTTOM	1	R-PBGA-B96	1.45 V	1 mm		7.5 mm		1073741824 bit	1.283 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			13 mm
W631GU6MB12J	Winbond Electronics	DDR3L DRAM	INDUSTRIAL	96	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		YES		1.35		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	105 Cel		64MX16	64M	-40 Cel		BOTTOM	1	R-PBGA-B96	1.45 V	1 mm		7.5 mm		1073741824 bit	1.283 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			13 mm
W632GG6NB-12	Winbond Electronics	DDR3 DRAM	OTHER	96	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words				1.5		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	95 Cel		128MX16	128M	0 Cel		BOTTOM	1	R-PBGA-B96	1.575 V	1 mm		7.5 mm		2147483648 bit	1.425 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			13 mm
W632GG6NB12I	Winbond Electronics	DDR3 DRAM	INDUSTRIAL	96	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words				1.5		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	95 Cel		128MX16	128M	-40 Cel		BOTTOM	1	R-PBGA-B96	1.575 V	1 mm		7.5 mm		2147483648 bit	1.425 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			13 mm

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.