ZIP DRAM 1,375

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
TMS4256-15SDE	Texas Instruments	PAGE MODE DRAM	INDUSTRIAL	16	ZIP	256	RECTANGULAR	PLASTIC/EPOXY	PAGE	NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS		262144 words			5		1	IN-LINE			2.54 mm	85 Cel	3-STATE	256KX1	256K	-40 Cel		ZIG-ZAG	1	R-PZIP-T16	5.5 V	8.26 mm	2.8 mm	Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					20.5 mm	150 ns
TMS46400-80SD	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	20	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS		1048576 words			3.3		4	IN-LINE			1.27 mm	70 Cel		1MX4	1M	0 Cel		ZIG-ZAG	1	R-PZIP-T20	3.6 V	10.16 mm	2.8 mm	Not Qualified	4194304 bit	3 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH						80 ns
TMS44101-70SD	Texas Instruments	NIBBLE MODE DRAM	COMMERCIAL	20	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY	NIBBLE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS	85 mA	4194304 words		SEPARATE	5	5	1	IN-LINE	ZIP20,.1	DRAMs	1.27 mm	70 Cel	3-STATE	4MX1	4M	0 Cel		ZIG-ZAG	1	R-PZIP-T20	5.5 V	10.16 mm	2.8 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.001 Amp		70 ns
SMJ416400-10SV	Texas Instruments	FAST PAGE DRAM	MILITARY	24	ZIP	4096	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS		4194304 words			5		4	IN-LINE			2.54 mm	125 Cel	3-STATE	4MX4	4M	-55 Cel		ZIG-ZAG	1	R-CZIP-T24	5.5 V	13.08 mm	2.92 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					31.75 mm	100 ns
TMS44100-70SD	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	20	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS	85 mA	4194304 words	NO	SEPARATE	5	5	1	IN-LINE	ZIP20,.1	DRAMs	1.27 mm	70 Cel	3-STATE	4MX1	4M	0 Cel		ZIG-ZAG	1	R-PZIP-T20	5.5 V	10.16 mm	2.8 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.001 Amp		70 ns
TMS44410-10SD	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	20	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS	65 mA	1048576 words	NO	COMMON	5	5	4	IN-LINE	ZIP20,.1	DRAMs	1.27 mm	70 Cel	3-STATE	1MX4	1M	0 Cel		ZIG-ZAG	1	R-PZIP-T20	5.5 V	10.16 mm	2.8 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.001 Amp		100 ns
SMJ4C1024-12SV	Texas Instruments	FAST PAGE DRAM	MILITARY	20	ZIP	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS		1048576 words			5		1	IN-LINE			2.54 mm	125 Cel	3-STATE	1MX1	1M	-55 Cel		ZIG-ZAG	1	R-CZIP-T20	5.5 V	10.92 mm	2.92 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					26.67 mm	120 ns
TMS44C256-60SD	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	20	ZIP	512	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		THROUGH-HOLE		95 mA	262144 words		COMMON	5	5	4	IN-LINE	ZIP20,.1	DRAMs	1.27 mm	70 Cel	3-STATE	256KX4	256K	0 Cel		ZIG-ZAG		R-PZIP-T20				Not Qualified	1048576 bit				NOT SPECIFIED	NOT SPECIFIED	.002 Amp		60 ns
TMS46400P-70SD	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	20	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS		1048576 words	YES		3.3		4	IN-LINE			1.27 mm	70 Cel		1MX4	1M	0 Cel		ZIG-ZAG	1	R-PZIP-T20	3.6 V	10.16 mm	2.8 mm	Not Qualified	4194304 bit	3 V	RAS ONLY; CAS BEFORE RAS; HIDDEN; SELF REFRESH						70 ns
TMS44100-80SD	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	20	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS	75 mA	4194304 words	NO	SEPARATE	5	5	1	IN-LINE	ZIP20,.1	DRAMs	1.27 mm	70 Cel	3-STATE	4MX1	4M	0 Cel		ZIG-ZAG	1	R-PZIP-T20	5.5 V	10.16 mm	2.8 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.001 Amp		80 ns
TMS46100-70SD	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	20	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS		4194304 words			3.3		1	IN-LINE			1.27 mm	70 Cel		4MX1	4M	0 Cel		ZIG-ZAG	1	R-PZIP-T20	3.6 V	10.16 mm	2.8 mm	Not Qualified	4194304 bit	3 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH						70 ns
TMS4256-12SDL	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	16	ZIP	256	RECTANGULAR	PLASTIC/EPOXY	PAGE	NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS		262144 words			5		1	IN-LINE			2.54 mm	70 Cel	3-STATE	256KX1	256K	0 Cel		ZIG-ZAG	1	R-PZIP-T16	5.5 V	8.26 mm	2.8 mm	Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					20.5 mm	120 ns
SMJ4C1024-80SV	Texas Instruments	FAST PAGE DRAM	MILITARY	20	ZIP	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS		1048576 words			5		1	IN-LINE			2.54 mm	125 Cel	3-STATE	1MX1	1M	-55 Cel		ZIG-ZAG	1	R-CZIP-T20	5.5 V	10.92 mm	2.92 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					26.67 mm	80 ns
TMS44101-80SD	Texas Instruments	NIBBLE MODE DRAM	COMMERCIAL	20	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY	NIBBLE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS	75 mA	4194304 words		SEPARATE	5	5	1	IN-LINE	ZIP20,.1	DRAMs	1.27 mm	70 Cel	3-STATE	4MX1	4M	0 Cel		ZIG-ZAG	1	R-PZIP-T20	5.5 V	10.16 mm	2.8 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.001 Amp		80 ns
TMS4C1027-12SD	Texas Instruments	STATIC COLUMN DRAM	COMMERCIAL	20	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	STATIC COLUMN	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS	55 mA	1048576 words		SEPARATE	5	5	1	IN-LINE	ZIP20,.1	SRAMs	1.27 mm	70 Cel	3-STATE	1MX1	1M	0 Cel		ZIG-ZAG	1	R-PZIP-T20	5.5 V	10.16 mm	2.8 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.002 Amp		120 ns
TMS44100P-60SD	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	20	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS		4194304 words	YES		5		1	IN-LINE			1.27 mm	70 Cel		4MX1	4M	0 Cel		ZIG-ZAG	1	R-PZIP-T20	5.5 V	10.16 mm	2.8 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN; SELF REFRESH						60 ns
TMS4C1025-10SD	Texas Instruments	NIBBLE MODE DRAM	COMMERCIAL	20	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	NIBBLE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS	65 mA	1048576 words		SEPARATE	5	5	1	IN-LINE	ZIP20,.1	DRAMs	1.27 mm	70 Cel	3-STATE	1MX1	1M	0 Cel		ZIG-ZAG	1	R-PZIP-T20	5.5 V	10.16 mm	2.8 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.002 Amp		100 ns
TMS44400-80SD	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	20	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS	75 mA	1048576 words	NO	COMMON	5	5	4	IN-LINE	ZIP20,.1	DRAMs	1.27 mm	70 Cel	3-STATE	1MX4	1M	0 Cel		ZIG-ZAG	1	R-PZIP-T20	5.5 V	10.16 mm	2.8 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.001 Amp		80 ns
TMS4256-10SDE	Texas Instruments	PAGE MODE DRAM	INDUSTRIAL	16	ZIP	256	RECTANGULAR	PLASTIC/EPOXY	PAGE	NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS		262144 words			5		1	IN-LINE			2.54 mm	85 Cel	3-STATE	256KX1	256K	-40 Cel		ZIG-ZAG	1	R-PZIP-T16	5.5 V	8.26 mm	2.8 mm	Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					20.5 mm	100 ns
TMS44C251-15SDL	Texas Instruments	VIDEO DRAM	COMMERCIAL	28	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS		262144 words			5	5	4	IN-LINE	ZIP28,.1	Other Memory ICs	2.54 mm	70 Cel	3-STATE	256KX4	256K	0 Cel		ZIG-ZAG	2	R-PZIP-T28	5.5 V	10.16 mm	2.8 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 512 X 4 SAM PORT		NOT SPECIFIED	NOT SPECIFIED	.005 Amp	36.07 mm	150 ns
TMS44100P-80SD	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	20	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS		4194304 words	YES		5		1	IN-LINE			1.27 mm	70 Cel		4MX1	4M	0 Cel		ZIG-ZAG	1	R-PZIP-T20	5.5 V	10.16 mm	2.8 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN; SELF REFRESH						80 ns
5962-9062203MNA	Texas Instruments	FAST PAGE DRAM	MILITARY	20	ZIP		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS		4194304 words			5		1	IN-LINE			1.27 mm	125 Cel		4MX1	4M	-55 Cel	TIN LEAD	ZIG-ZAG	1	R-PZIP-T20	5.5 V	11.42 mm	2.85 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0				26.67 mm	80 ns
TMS44C256-80SD	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	20	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS	75 mA	262144 words		COMMON	5	5	4	IN-LINE	ZIP20,.1	DRAMs	1.27 mm	70 Cel	3-STATE	256KX4	256K	0 Cel		ZIG-ZAG	1	R-PZIP-T20	5.5 V	10.16 mm	2.8 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.002 Amp		80 ns
SMJ416400-80SV	Texas Instruments	FAST PAGE DRAM	MILITARY	24	ZIP	4096	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS		4194304 words			5		4	IN-LINE			2.54 mm	125 Cel	3-STATE	4MX4	4M	-55 Cel		ZIG-ZAG	1	R-CZIP-T24	5.5 V	13.08 mm	2.92 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					31.75 mm	80 ns
TMS44100P-70SD	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	20	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS		4194304 words	YES		5		1	IN-LINE			1.27 mm	70 Cel		4MX1	4M	0 Cel		ZIG-ZAG	1	R-PZIP-T20	5.5 V	10.16 mm	2.8 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN; SELF REFRESH						70 ns
5962-8949704MMX	Texas Instruments	VIDEO DRAM	MILITARY	28	ZIP		RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	ASYNCHRONOUS		262144 words			5		4	IN-LINE			1.27 mm	125 Cel		256KX4	256K	-55 Cel		ZIG-ZAG	2	R-XZIP-T28	5.5 V	13.08 mm	2.92 mm	Not Qualified	1048576 bit	4.5 V	CAS BEFORE RAS/HIDDEN REFRESH					36.83 mm	100 ns
TMS46400-10SD	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	20	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS		1048576 words			3.3		4	IN-LINE			1.27 mm	70 Cel		1MX4	1M	0 Cel		ZIG-ZAG	1	R-PZIP-T20	3.6 V	10.16 mm	2.8 mm	Not Qualified	4194304 bit	3 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH						100 ns
TMS4C1027-80SD	Texas Instruments	STATIC COLUMN DRAM	COMMERCIAL	20	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	STATIC COLUMN	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS	75 mA	1048576 words		SEPARATE	5	5	1	IN-LINE	ZIP20,.1	SRAMs	1.27 mm	70 Cel	3-STATE	1MX1	1M	0 Cel		ZIG-ZAG	1	R-PZIP-T20	5.5 V	10.16 mm	2.8 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.002 Amp		80 ns
TMS46100-10SD	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	20	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS		4194304 words			3.3		1	IN-LINE			1.27 mm	70 Cel		4MX1	4M	0 Cel		ZIG-ZAG	1	R-PZIP-T20	3.6 V	10.16 mm	2.8 mm	Not Qualified	4194304 bit	3 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH						100 ns
TMS4256-15SDL	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	16	ZIP	256	RECTANGULAR	PLASTIC/EPOXY	PAGE	NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS		262144 words			5		1	IN-LINE			2.54 mm	70 Cel	3-STATE	256KX1	256K	0 Cel		ZIG-ZAG	1	R-PZIP-T16	5.5 V	8.26 mm	2.8 mm	Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					20.5 mm	150 ns
5962-9062202MNA	Texas Instruments	FAST PAGE DRAM	MILITARY	20	ZIP		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS		4194304 words			5		1	IN-LINE			1.27 mm	125 Cel		4MX1	4M	-55 Cel	TIN LEAD	ZIG-ZAG	1	R-PZIP-T20	5.5 V	11.42 mm	2.85 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0				26.67 mm	100 ns
SMJ416400-70SV	Texas Instruments	FAST PAGE DRAM	MILITARY	24	ZIP	4096	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS		4194304 words			5		4	IN-LINE			2.54 mm	125 Cel	3-STATE	4MX4	4M	-55 Cel		ZIG-ZAG	1	R-CZIP-T24	5.5 V	13.08 mm	2.92 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					31.75 mm	70 ns
TMS4C1025-80SD	Texas Instruments	NIBBLE MODE DRAM	COMMERCIAL	20	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	NIBBLE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS	75 mA	1048576 words		SEPARATE	5	5	1	IN-LINE	ZIP20,.1	DRAMs	1.27 mm	70 Cel	3-STATE	1MX1	1M	0 Cel		ZIG-ZAG	1	R-PZIP-T20	5.5 V	10.16 mm	2.8 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.002 Amp		80 ns
TMS44400-10SD	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	20	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS	65 mA	1048576 words	NO	COMMON	5	5	4	IN-LINE	ZIP20,.1	DRAMs	1.27 mm	70 Cel	3-STATE	1MX4	1M	0 Cel		ZIG-ZAG	1	R-PZIP-T20	5.5 V	10.16 mm	2.8 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.001 Amp		100 ns
TMS4C1027-10SD	Texas Instruments	STATIC COLUMN DRAM	COMMERCIAL	20	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	STATIC COLUMN	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS	65 mA	1048576 words		SEPARATE	5	5	1	IN-LINE	ZIP20,.1	SRAMs	1.27 mm	70 Cel	3-STATE	1MX1	1M	0 Cel		ZIG-ZAG	1	R-PZIP-T20	5.5 V	10.16 mm	2.8 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.002 Amp		100 ns
TMS44100-60SD	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	20	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS	95 mA	4194304 words	NO	SEPARATE	5	5	1	IN-LINE	ZIP20,.1	DRAMs	1.27 mm	70 Cel	3-STATE	4MX1	4M	0 Cel		ZIG-ZAG	1	R-PZIP-T20	5.5 V	10.16 mm	2.8 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.001 Amp		60 ns
TMS4256-8SDE	Texas Instruments	PAGE MODE DRAM	INDUSTRIAL	16	ZIP	256	RECTANGULAR	PLASTIC/EPOXY	PAGE	NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS		262144 words			5		1	IN-LINE			2.54 mm	85 Cel	3-STATE	256KX1	256K	-40 Cel		ZIG-ZAG	1	R-PZIP-T16	5.25 V	8.26 mm	2.8 mm	Not Qualified	262144 bit	4.75 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					20.5 mm	80 ns
TMS44400-60SD	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	20	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS	95 mA	1048576 words	NO	COMMON	5	5	4	IN-LINE	ZIP20,.1	DRAMs	1.27 mm	70 Cel	3-STATE	1MX4	1M	0 Cel		ZIG-ZAG	1	R-PZIP-T20	5.5 V	10.16 mm	2.8 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.001 Amp		60 ns
TMS46100P-10SD	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	20	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS		4194304 words	YES		3.3		1	IN-LINE			1.27 mm	70 Cel		4MX1	4M	0 Cel		ZIG-ZAG	1	R-PZIP-T20	3.6 V	10.16 mm	2.8 mm	Not Qualified	4194304 bit	3 V	RAS ONLY; CAS BEFORE RAS; HIDDEN; SELF REFRESH						100 ns
TMS44C250-10SDL	Texas Instruments	VIDEO DRAM	COMMERCIAL	28	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS		262144 words			5		4	IN-LINE			1.27 mm	70 Cel	3-STATE	256KX4	256K	0 Cel		ZIG-ZAG	2	R-PZIP-T28	5.5 V	10.16 mm	2.8 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 512 X 4 SAM PORT						100 ns
5962-9084701MNA	Texas Instruments	FAST PAGE DRAM	MILITARY	20	ZIP	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	ASYNCHRONOUS	70 mA	1048576 words	NO	COMMON	5	5	4	IN-LINE	ZIP20,.1	DRAMs	1.27 mm	125 Cel	3-STATE	1MX4	1M	-55 Cel		ZIG-ZAG	1	R-XZIP-T20	5.5 V	11.56 mm	2.92 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.004 Amp	26.67 mm	120 ns
5962-8949704MMA	Texas Instruments	VIDEO DRAM	MILITARY	28	ZIP		RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	ASYNCHRONOUS	120 mA	262144 words			5	5	4	IN-LINE	ZIP28,.1	Other Memory ICs	1.27 mm	125 Cel		256KX4	256K	-55 Cel		ZIG-ZAG	2	R-XZIP-T28	5.5 V	13.08 mm	2.92 mm	Not Qualified	1048576 bit	4.5 V	CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.015 Amp	36.83 mm	100 ns
TMS4256-12SDE	Texas Instruments	PAGE MODE DRAM	INDUSTRIAL	16	ZIP	256	RECTANGULAR	PLASTIC/EPOXY	PAGE	NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS		262144 words			5		1	IN-LINE			2.54 mm	85 Cel	3-STATE	256KX1	256K	-40 Cel		ZIG-ZAG	1	R-PZIP-T16	5.5 V	8.26 mm	2.8 mm	Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					20.5 mm	120 ns
SMJ4C1024-15SV	Texas Instruments	FAST PAGE DRAM	MILITARY	20	ZIP	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS		1048576 words			5		1	IN-LINE			2.54 mm	125 Cel	3-STATE	1MX1	1M	-55 Cel		ZIG-ZAG	1	R-CZIP-T20	5.5 V	10.92 mm	2.92 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					26.67 mm	150 ns
TMS4256-10SDL	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	16	ZIP	256	RECTANGULAR	PLASTIC/EPOXY	PAGE	NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS		262144 words			5		1	IN-LINE			2.54 mm	70 Cel	3-STATE	256KX1	256K	0 Cel		ZIG-ZAG	1	R-PZIP-T16	5.5 V	8.26 mm	2.8 mm	Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					20.5 mm	100 ns
SMJ4C1024-10SV	Texas Instruments	FAST PAGE DRAM	MILITARY	20	ZIP	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS		1048576 words			5		1	IN-LINE			2.54 mm	125 Cel	3-STATE	1MX1	1M	-55 Cel		ZIG-ZAG	1	R-CZIP-T20	5.5 V	10.92 mm	2.92 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					26.67 mm	100 ns
TMS44C250-12SDL	Texas Instruments	VIDEO DRAM	COMMERCIAL	28	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS		262144 words			5		4	IN-LINE			1.27 mm	70 Cel	3-STATE	256KX4	256K	0 Cel		ZIG-ZAG	2	R-PZIP-T28	5.5 V	10.16 mm	2.8 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 512 X 4 SAM PORT						120 ns
TMS4257-12SDL	Texas Instruments	NIBBLE MODE DRAM	COMMERCIAL	16	ZIP	256	RECTANGULAR	PLASTIC/EPOXY	NIBBLE	NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS		262144 words			5		1	IN-LINE			2.54 mm	70 Cel	3-STATE	256KX1	256K	0 Cel		ZIG-ZAG	1	R-PZIP-T16	5.5 V	8.26 mm	2.8 mm	Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					20.5 mm	120 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.