ZIP DRAM 1,375

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Standby Current	Length	Maximum Access Time
KM41C4000ASLZ-7	Samsung	FAST PAGE DRAM	COMMERCIAL	20	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	105 mA	4194304 words	NO	SEPARATE	5	5	1	IN-LINE	ZIP20,.1	DRAMs	1.27 mm	70 Cel	3-STATE	4MX1	4M	TIN LEAD	ZIG-ZAG	1	R-PZIP-T20		5.5 V	10.16 mm	2.96 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.0001 Amp	26.165 mm	70 ns
KM48C512Z-8	Samsung	FAST PAGE DRAM	COMMERCIAL	28	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	90 mA	524288 words	NO	COMMON	5	5	8	IN-LINE	ZIP28,.1	DRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	TIN LEAD	ZIG-ZAG	1	R-PZIP-T28		5.5 V	10.16 mm	2.96 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.001 Amp		80 ns
KM41V4000CLZ-6	Samsung	FAST PAGE DRAM	COMMERCIAL	20	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	60 mA	4194304 words	NO	SEPARATE	3.3	3.3	1	IN-LINE	ZIP20,.1	DRAMs	1.27 mm	70 Cel	3-STATE	4MX1	4M	Tin/Lead (Sn/Pb)	ZIG-ZAG	1	R-PZIP-T20		3.6 V	10.16 mm		Not Qualified	4194304 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.0001 Amp	26.165 mm	60 ns
KM41C4000Z-10	Samsung	FAST PAGE DRAM	COMMERCIAL	20	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	85 mA	4194304 words	NO	SEPARATE	5	5	1	IN-LINE	ZIP20,.1	DRAMs	1.27 mm	70 Cel	3-STATE	4MX1	4M	TIN LEAD	ZIG-ZAG	1	R-PZIP-T20		5.5 V	10.16 mm	2.96 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.001 Amp	26.165 mm	100 ns
KM44C1004CSLZ-8	Samsung	EDO DRAM	COMMERCIAL	20	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	55 mA	1048576 words	NO	COMMON	5	5	4	IN-LINE	ZIP20,.1	DRAMs	1.27 mm	70 Cel	3-STATE	1MX4	1M	Tin/Lead (Sn/Pb)	ZIG-ZAG	1	R-PZIP-T20		5.5 V	10.16 mm	2.96 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.0001 Amp	26.165 mm	80 ns
KM416C256ALZ-8	Samsung	FAST PAGE DRAM	COMMERCIAL	40	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	100 mA	262144 words	NO	COMMON	5	5	16	IN-LINE	ZIP40,.1	DRAMs	1.27 mm	70 Cel	3-STATE	256KX16	256K	TIN LEAD	ZIG-ZAG	1	R-PZIP-T40		5.5 V	12.06 mm	2.96 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0	.0002 Amp		80 ns
KM416C256SLZ-7	Samsung	FAST PAGE DRAM	COMMERCIAL	40	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	145 mA	262144 words	NO	COMMON	5	5	16	IN-LINE	ZIP40,.1	DRAMs	1.27 mm	70 Cel	3-STATE	256KX16	256K	TIN LEAD	ZIG-ZAG	1	R-PZIP-T40		5.5 V	12.07 mm	2.96 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.0001 Amp		70 ns
KM428C128Z-10	Samsung	VIDEO DRAM	COMMERCIAL	40	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	140 mA	131072 words			5	5	8	IN-LINE	ZIP40,.1	Other Memory ICs	1.27 mm	70 Cel	3-STATE	128KX8	128K	TIN LEAD	ZIG-ZAG	2	R-PZIP-T40		5.5 V	12.07 mm	2.96 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 256 X 8 SAM PORT	e0	.005 Amp		100 ns
KM416C256ALZ-6	Samsung	FAST PAGE DRAM	COMMERCIAL	40	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	120 mA	262144 words	NO	COMMON	5	5	16	IN-LINE	ZIP40,.1	DRAMs	1.27 mm	70 Cel	3-STATE	256KX16	256K	TIN LEAD	ZIG-ZAG	1	R-PZIP-T40		5.5 V	12.06 mm	2.96 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0	.0002 Amp		60 ns
KM44C268CZ-6	Samsung	STATIC COLUMN DRAM	COMMERCIAL	20	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	STATIC COLUMN	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	70 mA	262144 words		COMMON	5	5	4	IN-LINE	ZIP20,.1	SRAMs	1.27 mm	70 Cel	3-STATE	256KX4	256K	TIN LEAD	ZIG-ZAG	1	R-PZIP-T20		5.5 V	10.16 mm	2.96 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0	.001 Amp	26.165 mm	60 ns
KM418C256SLZ-8	Samsung	FAST PAGE DRAM	COMMERCIAL	40	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	130 mA	262144 words	NO	COMMON	5	5	18	IN-LINE	ZIP40,.1	DRAMs	1.27 mm	70 Cel	3-STATE	256KX18	256K	TIN LEAD	ZIG-ZAG	1	R-PZIP-T40		5.5 V	12.07 mm	2.96 mm	Not Qualified	4718592 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.0001 Amp		80 ns
KM41C4001AZ-7	Samsung	NIBBLE MODE DRAM	COMMERCIAL	20	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY	NIBBLE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	105 mA	4194304 words		SEPARATE	5	5	1	IN-LINE	ZIP20,.1	DRAMs	1.27 mm	70 Cel	3-STATE	4MX1	4M	TIN LEAD	ZIG-ZAG	1	R-PZIP-T20		5.5 V	10.16 mm	2.96 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.001 Amp	26.165 mm	70 ns
KM44C256AZ-12	Samsung	FAST PAGE DRAM	COMMERCIAL	20	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	55 mA	262144 words		COMMON	5	5	4	IN-LINE	ZIP20,.1	DRAMs	1.27 mm	70 Cel	3-STATE	256KX4	256K	TIN LEAD	ZIG-ZAG	1	R-PZIP-T20	3	5.5 V	10.16 mm	2.995 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.001 Amp	26.165 mm	120 ns
KM418C256LZ-7	Samsung	FAST PAGE DRAM	COMMERCIAL	40	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	150 mA	262144 words	NO	COMMON	5	5	18	IN-LINE	ZIP40,.1	DRAMs	1.27 mm	70 Cel	3-STATE	256KX18	256K	TIN LEAD	ZIG-ZAG	1	R-PZIP-T40		5.5 V	12.07 mm	2.96 mm	Not Qualified	4718592 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.0002 Amp		70 ns
KM44V1004CZ-8	Samsung	EDO DRAM	COMMERCIAL	20	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	50 mA	1048576 words	NO	COMMON	3.3	3.3	4	IN-LINE	ZIP20,.1	DRAMs	1.27 mm	70 Cel	3-STATE	1MX4	1M	Tin/Lead (Sn/Pb)	ZIG-ZAG	1	R-PZIP-T20		3.6 V	10.16 mm		Not Qualified	4194304 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.001 Amp	26.165 mm	80 ns
KM44C1004CZ-7	Samsung	EDO DRAM	COMMERCIAL	20	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	65 mA	1048576 words	NO	COMMON	5	5	4	IN-LINE	ZIP20,.1	DRAMs	1.27 mm	70 Cel	3-STATE	1MX4	1M	Tin/Lead (Sn/Pb)	ZIG-ZAG	1	R-PZIP-T20		5.5 V	10.16 mm		Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.001 Amp	26.165 mm	70 ns
KM41C4000CLZ-5	Samsung	FAST PAGE DRAM	COMMERCIAL	20	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	85 mA	4194304 words	NO	SEPARATE	5	5	1	IN-LINE	ZIP20,.1	DRAMs	1.27 mm	70 Cel	3-STATE	4MX1	4M	Tin/Lead (Sn/Pb)	ZIG-ZAG	1	R-PZIP-T20		5.5 V	10.16 mm		Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.0002 Amp	26.165 mm	50 ns
KM41C1002BZ-10	Samsung	STATIC COLUMN DRAM	COMMERCIAL	19	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	STATIC COLUMN	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	60 mA	1048576 words		SEPARATE	5	5	1	IN-LINE	ZIP20,.1	SRAMs	1.27 mm	70 Cel	3-STATE	1MX1	1M	TIN LEAD	ZIG-ZAG	1	R-PZIP-T19		5.5 V	10.16 mm	2.96 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.001 Amp	26.165 mm	100 ns
KM41C1000Z10	Samsung	FAST PAGE DRAM	COMMERCIAL	20	ZIP	512	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	THROUGH-HOLE		60 mA	1048576 words		SEPARATE	5	5	1	IN-LINE	ZIP20,.1	DRAMs	1.27 mm	70 Cel	3-STATE	1MX1	1M	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T20					Not Qualified	1048576 bit			e0	.001 Amp		100 ns
KM424C257Z-7	Samsung	VIDEO DRAM	COMMERCIAL	28	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	160 mA	262144 words			5	5	4	IN-LINE	ZIP28,.1	Other Memory ICs	1.27 mm	70 Cel		256KX4	256K	TIN LEAD	ZIG-ZAG	2	R-PZIP-T28		5.5 V	10.16 mm	2.96 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0	.005 Amp		70 ns
KM41V4000CLZ-8	Samsung	FAST PAGE DRAM	COMMERCIAL	20	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	50 mA	4194304 words	NO	SEPARATE	3.3	3.3	1	IN-LINE	ZIP20,.1	DRAMs	1.27 mm	70 Cel	3-STATE	4MX1	4M	Tin/Lead (Sn/Pb)	ZIG-ZAG	1	R-PZIP-T20		3.6 V	10.16 mm		Not Qualified	4194304 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.0001 Amp	26.165 mm	80 ns
KM49C512Z-8	Samsung	FAST PAGE DRAM	COMMERCIAL	28	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	95 mA	524288 words	NO	COMMON	5	5	9	IN-LINE	ZIP28,.1	DRAMs	1.27 mm	70 Cel	3-STATE	512KX9	512K	TIN LEAD	ZIG-ZAG	1	R-PZIP-T28		5.5 V	10.16 mm	2.96 mm	Not Qualified	4718592 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.001 Amp		80 ns
KM41C1000CLZ-7	Samsung	FAST PAGE DRAM	COMMERCIAL	20	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	65 mA	1048576 words		SEPARATE	5	5	1	IN-LINE	ZIP20,.1	DRAMs	1.27 mm	70 Cel	3-STATE	1MX1	1M	Tin/Lead (Sn/Pb)	ZIG-ZAG	1	R-PZIP-T20		5.5 V	10.16 mm	2.96 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.0002 Amp	26.165 mm	70 ns
KM41C1001CZ-8	Samsung	NIBBLE MODE DRAM	COMMERCIAL	20	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	NIBBLE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	60 mA	1048576 words		SEPARATE	5	5	1	IN-LINE	ZIP20,.1	DRAMs	1.27 mm	70 Cel	3-STATE	1MX1	1M	TIN LEAD	ZIG-ZAG	1	R-PZIP-T20		5.5 V	10.16 mm	2.96 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0	.001 Amp	26.165 mm	80 ns
KM44V1000BLLZ-7	Samsung	FAST PAGE DRAM	COMMERCIAL	20	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	60 mA	1048576 words	YES	COMMON	3.3	3.3	4	IN-LINE	ZIP20,.1	DRAMs	1.27 mm	70 Cel	3-STATE	1MX4	1M	TIN LEAD	ZIG-ZAG	1	R-PZIP-T20		3.6 V	10.16 mm	2.96 mm	Not Qualified	4194304 bit	3 V	RAS ONLY; CAS BEFORE RAS; HIDDEN; SELF REFRESH	e0	.00005 Amp	26.165 mm	70 ns
KM49C512LLZ-8	Samsung	FAST PAGE DRAM	COMMERCIAL	28	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	95 mA	524288 words	YES	COMMON	5	5	9	IN-LINE	ZIP28,.1	DRAMs	1.27 mm	70 Cel	3-STATE	512KX9	512K	TIN LEAD	ZIG-ZAG	1	R-PZIP-T28		5.5 V	10.16 mm	2.96 mm	Not Qualified	4718592 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	e0	.0001 Amp		80 ns
KM44V1000BLLZ-8	Samsung	FAST PAGE DRAM	COMMERCIAL	20	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	55 mA	1048576 words	YES	COMMON	3.3	3.3	4	IN-LINE	ZIP20,.1	DRAMs	1.27 mm	70 Cel	3-STATE	1MX4	1M	TIN LEAD	ZIG-ZAG	1	R-PZIP-T20		3.6 V	10.16 mm	2.96 mm	Not Qualified	4194304 bit	3 V	RAS ONLY; CAS BEFORE RAS; HIDDEN; SELF REFRESH	e0	.00005 Amp	26.165 mm	80 ns
KM49C512Z-7	Samsung	FAST PAGE DRAM	COMMERCIAL	28	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	110 mA	524288 words	NO	COMMON	5	5	9	IN-LINE	ZIP28,.1	DRAMs	1.27 mm	70 Cel	3-STATE	512KX9	512K	TIN LEAD	ZIG-ZAG	1	R-PZIP-T28		5.5 V	10.16 mm	2.96 mm	Not Qualified	4718592 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.001 Amp		70 ns
KM44C266BZ-10	Samsung	FAST PAGE DRAM	COMMERCIAL	19	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	60 mA	262144 words		COMMON	5	5	4	IN-LINE	ZIP20,.1	DRAMs	1.27 mm	70 Cel	3-STATE	256KX4	256K	TIN LEAD	ZIG-ZAG	1	R-PZIP-T19		5.5 V	10.16 mm	2.96 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.001 Amp	26.165 mm	100 ns
KM44C1000CLZ-8	Samsung	FAST PAGE DRAM	COMMERCIAL	20	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	55 mA	1048576 words	NO	COMMON	5	5	4	IN-LINE	ZIP20,.1	DRAMs	1.27 mm	70 Cel	3-STATE	1MX4	1M	Tin/Lead (Sn/Pb)	ZIG-ZAG	1	R-PZIP-T20		5.5 V	10.16 mm		Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.0002 Amp	26.165 mm	80 ns
KM44C256DZ-8	Samsung	FAST PAGE DRAM	COMMERCIAL	19	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	50 mA	262144 words		COMMON	5	5	4	IN-LINE	ZIP20,.1	DRAMs	1.27 mm	70 Cel	3-STATE	256KX4	256K	TIN LEAD	ZIG-ZAG	1	R-PZIP-T19		5.5 V	10.16 mm	2.96 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.001 Amp	26.165 mm	80 ns
KM44C1000BSLZ-7	Samsung	FAST PAGE DRAM	COMMERCIAL	20	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	80 mA	1048576 words	NO	COMMON	5	5	4	IN-LINE	ZIP20,.1	DRAMs	1.27 mm	70 Cel	3-STATE	1MX4	1M	TIN LEAD	ZIG-ZAG	1	R-PZIP-T20		5.5 V	10.16 mm	2.96 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0	.0001 Amp	26.165 mm	70 ns
KM424C256Z-12	Samsung	VIDEO DRAM	COMMERCIAL	28	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	95 mA	262144 words			5	5	4	IN-LINE	ZIP28,.1	Other Memory ICs	1.27 mm	70 Cel	3-STATE	256KX4	256K	TIN LEAD	ZIG-ZAG	2	R-PZIP-T28		5.5 V	10.16 mm	2.96 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 512 X 4 SAM PORT	e0	.003 Amp		120 ns
KM41C4000ASLZ-10	Samsung	FAST PAGE DRAM	COMMERCIAL	20	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	85 mA	4194304 words	NO	SEPARATE	5	5	1	IN-LINE	ZIP20,.1	DRAMs	1.27 mm	70 Cel	3-STATE	4MX1	4M	TIN LEAD	ZIG-ZAG	1	R-PZIP-T20		5.5 V	10.16 mm	2.96 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.0001 Amp	26.165 mm	100 ns
KM41256AZ-12	Samsung	PAGE MODE DRAM	COMMERCIAL	16	ZIP	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS	THROUGH-HOLE		75 mA	262144 words		SEPARATE	5	5	1	IN-LINE	ZIP16,.1	DRAMs	1.27 mm	70 Cel	3-STATE	256KX1	256K	TIN LEAD	ZIG-ZAG		R-PZIP-T16	3				Not Qualified	262144 bit			e0			120 ns
KM44C1010BZ-8	Samsung	FAST PAGE DRAM	COMMERCIAL	20	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	70 mA	1048576 words	NO	COMMON	5	5	4	IN-LINE	ZIP20,.1	DRAMs	1.27 mm	70 Cel	3-STATE	1MX4	1M	TIN LEAD	ZIG-ZAG	1	R-PZIP-T20		5.5 V	10.16 mm	2.96 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0	.001 Amp	26.165 mm	80 ns
KM44C1002CZ-6	Samsung	STATIC COLUMN DRAM	COMMERCIAL	20	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY	STATIC COLUMN	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	75 mA	1048576 words		COMMON	5	5	4	IN-LINE	ZIP20,.1	SRAMs	1.27 mm	70 Cel	3-STATE	1MX4	1M	Tin/Lead (Sn/Pb)	ZIG-ZAG	1	R-PZIP-T20		5.5 V	10.16 mm		Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.001 Amp	26.165 mm	60 ns
KM44C258CZ-8	Samsung	STATIC COLUMN DRAM	COMMERCIAL	20	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	STATIC COLUMN	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	60 mA	262144 words		COMMON	5	5	4	IN-LINE	ZIP20,.1	SRAMs	1.27 mm	70 Cel	3-STATE	256KX4	256K	TIN LEAD	ZIG-ZAG	1	R-PZIP-T20		5.5 V	10.16 mm	2.96 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0	.001 Amp	26.165 mm	80 ns
KM49V512AZ-8	Samsung	FAST PAGE DRAM	COMMERCIAL	28	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	70 mA	524288 words	NO	COMMON	3.3	3.3	9	IN-LINE	ZIP28,.1	DRAMs	1.27 mm	70 Cel	3-STATE	512KX9	512K	TIN LEAD	ZIG-ZAG	1	R-PZIP-T28		3.6 V	10.16 mm	2.96 mm	Not Qualified	4718592 bit	3 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0	.0005 Amp		80 ns
KM48C512ALZ-7	Samsung	FAST PAGE DRAM	COMMERCIAL	28	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	80 mA	524288 words	NO	COMMON	5	5	8	IN-LINE	ZIP28,.1	DRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	TIN LEAD	ZIG-ZAG	1	R-PZIP-T28		5.5 V	10.16 mm	2.96 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0	.0002 Amp		70 ns
KM41C1001BZ-7	Samsung	NIBBLE MODE DRAM	COMMERCIAL	19	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	NIBBLE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	85 mA	1048576 words		SEPARATE	5	5	1	IN-LINE	ZIP20,.1	DRAMs	1.27 mm	70 Cel	3-STATE	1MX1	1M	TIN LEAD	ZIG-ZAG	1	R-PZIP-T19		5.5 V	10.16 mm	2.96 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.001 Amp	26.165 mm	70 ns
KM424C256AZ-7	Samsung	VIDEO DRAM	COMMERCIAL	28	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	160 mA	262144 words			5	5	4	IN-LINE	ZIP28,.1	Other Memory ICs	1.27 mm	70 Cel		256KX4	256K	TIN LEAD	ZIG-ZAG	2	R-PZIP-T28		5.5 V	10.16 mm	2.96 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0	.005 Amp		70 ns
KM41C4000AZ-8	Samsung	FAST PAGE DRAM	COMMERCIAL	20	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	95 mA	4194304 words	NO	SEPARATE	5	5	1	IN-LINE	ZIP20,.1	DRAMs	1.27 mm	70 Cel	3-STATE	4MX1	4M	TIN LEAD	ZIG-ZAG	1	R-PZIP-T20		5.5 V	10.16 mm	2.96 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.001 Amp	26.165 mm	80 ns
KM41C4001Z-10	Samsung	NIBBLE MODE DRAM	COMMERCIAL	20	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY	NIBBLE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	85 mA	4194304 words		SEPARATE	5	5	1	IN-LINE	ZIP20,.1	DRAMs	1.27 mm	70 Cel	3-STATE	4MX1	4M	TIN LEAD	ZIG-ZAG	1	R-PZIP-T20		5.5 V	10.16 mm	2.96 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.001 Amp	26.165 mm	100 ns
KM44C1000CZ-6	Samsung	FAST PAGE DRAM	COMMERCIAL	20	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	75 mA	1048576 words	NO	COMMON	5	5	4	IN-LINE	ZIP20,.1	DRAMs	1.27 mm	70 Cel	3-STATE	1MX4	1M	Tin/Lead (Sn/Pb)	ZIG-ZAG	1	R-PZIP-T20		5.5 V	10.16 mm		Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.001 Amp	26.165 mm	60 ns
KM44C1000AZ-10	Samsung	FAST PAGE DRAM	COMMERCIAL	20	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	85 mA	1048576 words	NO	COMMON	5	5	4	IN-LINE	ZIP20,.1	DRAMs	1.27 mm	70 Cel	3-STATE	1MX4	1M	TIN LEAD	ZIG-ZAG	1	R-PZIP-T20		5.5 V	10.16 mm	2.96 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.001 Amp	26.165 mm	100 ns
KM41V4000CLZ-7	Samsung	FAST PAGE DRAM	COMMERCIAL	20	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	55 mA	4194304 words	NO	SEPARATE	3.3	3.3	1	IN-LINE	ZIP20,.1	DRAMs	1.27 mm	70 Cel	3-STATE	4MX1	4M	Tin/Lead (Sn/Pb)	ZIG-ZAG	1	R-PZIP-T20		3.6 V	10.16 mm		Not Qualified	4194304 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.0001 Amp	26.165 mm	70 ns
KM44C256BLZ-8	Samsung	FAST PAGE DRAM	COMMERCIAL	19	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	70 mA	262144 words		COMMON	5	5	4	IN-LINE	ZIP20,.1	DRAMs	1.27 mm	70 Cel	3-STATE	256KX4	256K	TIN LEAD	ZIG-ZAG	1	R-PZIP-T19		5.5 V	10.16 mm	2.96 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	.0002 Amp	26.165 mm	80 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.