RECTANGULAR DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
TM124MBK36R-70L	Texas Instruments	FAST PAGE DRAM MODULE	COMMERCIAL	72		1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS		NO LEAD	ASYNCHRONOUS		1048576 words			5		36	MICROELECTRONIC ASSEMBLY		16			70 Cel		3-STATE	1MX36	1M	0 Cel		SINGLE	1	R-XSMA-N72	5.5 V			Not Qualified	37748736 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						70 ns
TMS44C256-10DJR	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	20	SOJ	512	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		J BEND		65 mA	262144 words		COMMON	5	5	4	SMALL OUTLINE	SOJ20/26,.34		DRAMs	1.27 mm	70 Cel		3-STATE	256KX4	256K	0 Cel		DUAL		R-PDSO-J20				Not Qualified	1048576 bit				NOT SPECIFIED	NOT SPECIFIED	.002 Amp		100 ns
TMS45160L-80DZ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS	140 mA	262144 words	NO	COMMON	5	5	16	SMALL OUTLINE	SOJ40,.44		DRAMs	1.27 mm	70 Cel		3-STATE	256KX16	256K	0 Cel		DUAL	1	R-PDSO-J40	5.5 V	3.76 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/BATTERY BACKUP REFRESH; BYTE ACCESS		NOT SPECIFIED	NOT SPECIFIED	.0002 Amp	26.035 mm	80 ns
TM4164FM8-20L	Texas Instruments	DRAM MODULE	COMMERCIAL	30	SIMM	256	RECTANGULAR	UNSPECIFIED	PAGE	NO	1	NMOS		NO LEAD	ASYNCHRONOUS		65536 words		COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	SIM30		DRAMs	2.54 mm	70 Cel		3-STATE	64KX8	64K	0 Cel		SINGLE	1	R-XSMA-N30	5.5 V			Not Qualified	524288 bit	4.5 V	RAS ONLY REFRESH						200 ns
TMS416800-80DE	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	32	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS		2097152 words			5		8	SMALL OUTLINE, THIN PROFILE				1.27 mm	70 Cel			2MX8	2M	0 Cel		DUAL	1	R-PDSO-G32	5.5 V	1.2 mm	10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH					20.95 mm	80 ns
TM124BBK32S-60L	Texas Instruments	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS		NO LEAD	ASYNCHRONOUS		1048576 words			5		32	MICROELECTRONIC ASSEMBLY					70 Cel		3-STATE	1MX32	1M	0 Cel		SINGLE	1	R-XSMA-N72	5.5 V			Not Qualified	33554432 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						60 ns
SMJ417100-10HKBM	Texas Instruments	FAST PAGE DRAM	MILITARY	28	DFP	2048	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS		FLAT	ASYNCHRONOUS		16777216 words			5		1	FLATPACK				1.27 mm	125 Cel			16MX1	16M	-55 Cel		DUAL	1	R-CDFP-F28	5.5 V	3.32 mm	11.43 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH					19.685 mm	100 ns
TM497MBM36Q-80	Texas Instruments	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	2048	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS		NO LEAD	ASYNCHRONOUS	1040 mA	4194304 words	NO	COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel		3-STATE	4MX36	4M	0 Cel		SINGLE	1	R-XSMA-N72	5.5 V	33.147 mm		Not Qualified	150994944 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				.012 Amp		80 ns
TMS4464-12JL	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	18	DIP	256	RECTANGULAR	CERAMIC		NO		MOS		THROUGH-HOLE			65536 words		COMMON	5	5	4	IN-LINE	DIP18,.3		DRAMs	2.54 mm	70 Cel		3-STATE	64KX4	64K	0 Cel		DUAL		R-XDIP-T18				Not Qualified	262144 bit				NOT SPECIFIED	NOT SPECIFIED			120 ns
TMS464400-60DZ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	32	SOJ	8192	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS		16777216 words			3.3		4	SMALL OUTLINE				1.27 mm	70 Cel		3-STATE	16MX4	16M	0 Cel		DUAL	1	R-PDSO-J32	3.6 V	3.76 mm	10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					20.955 mm	60 ns
5962-9564301QYX	Texas Instruments	VIDEO DRAM	MILITARY	64	DFP		RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	YES	1	CMOS		FLAT	ASYNCHRONOUS		262144 words			5		16	FLATPACK				.5 mm	125 Cel			256KX16	256K	-55 Cel	GOLD	DUAL	2	R-XDFP-F64	5.5 V	3.81 mm	10.985 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 256 X 16 SAM PORT	e4				18.985 mm	80 ns
TMS4027-25NL	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	16	DIP	64	RECTANGULAR	PLASTIC/EPOXY		NO		MOS		THROUGH-HOLE			4096 words		SEPARATE			1	IN-LINE	DIP16,.3		DRAMs	2.54 mm	70 Cel		3-STATE	4KX1	4K	0 Cel		DUAL		R-PDIP-T16				Not Qualified	4096 bit				NOT SPECIFIED	NOT SPECIFIED			250 ns
SDRAM-10DGE	Texas Instruments	SYNCHRONOUS DRAM	COMMERCIAL	44	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	2 BANK PAGE RANDOM AND BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS		2097152 words	YES		3.3		8	SMALL OUTLINE, THIN PROFILE				.8 mm	70 Cel			2MX8	2M	0 Cel		DUAL	1	R-PDSO-G44	3.6 V	1.2 mm	10.16 mm	Not Qualified	16777216 bit	3 V	AUTO/SELF REFRESH					18.41 mm	60 ns
TMS41128B-15NL	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	16	DIP	128	RECTANGULAR	PLASTIC/EPOXY		NO		MOS		THROUGH-HOLE			131072 words		SEPARATE			1	IN-LINE	DIP16,.3		DRAMs	2.54 mm	70 Cel		3-STATE	128KX1	128K	0 Cel		DUAL		R-PDIP-T16				Not Qualified	131072 bit								150 ns
5962-01-101-3756	Texas Instruments		COMMERCIAL	18	DIP	64	RECTANGULAR	CERAMIC		NO		MOS		THROUGH-HOLE		70 mA	4096 words		COMMON			1	IN-LINE	DIP18,.3		Other Memory ICs	2.54 mm	70 Cel		OPEN-DRAIN	4KX1	4K	0 Cel		DUAL		R-XDIP-T18				Not Qualified	4096 bit				NOT SPECIFIED	NOT SPECIFIED			200 ns
TMS416800A-60DGC	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	28	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		GULL WING		80 mA	2097152 words	NO	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP28,.46		DRAMs	1.27 mm	70 Cel		3-STATE	2MX8	2M	0 Cel		DUAL		R-PDSO-G28				Not Qualified	16777216 bit				NOT SPECIFIED	NOT SPECIFIED	.001 Amp		60 ns
SMJ44C256-15HKM	Texas Instruments	FAST PAGE DRAM	MILITARY	20	DFP	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE WITH EDO	YES	1	CMOS	MIL-PRF-38535	FLAT	SYNCHRONOUS	55 mA	262144 words		COMMON	5	5	4	FLATPACK	FL20,.4		DRAMs	1.27 mm	125 Cel		3-STATE	256KX4	256K	-55 Cel		DUAL	1	R-CDFP-F20	5.5 V	2.41 mm	9.655 mm	Not Qualified	1048576 bit	4.5 V	CAS BEFORE RAS REFRESH		NOT SPECIFIED	NOT SPECIFIED	.003 Amp	17.015 mm	150 ns
SMC4030JR	Texas Instruments		OTHER	22	DIP	64	RECTANGULAR	CERAMIC		NO		MOS	38535Q/M;38534H;883B	THROUGH-HOLE		80 mA	4096 words		SEPARATE			1	IN-LINE	DIP22,.4		Other Memory ICs	2.54 mm	85 Cel		3-STATE	4KX1	4K	-55 Cel		DUAL		R-XDIP-T22				Not Qualified	4096 bit				NOT SPECIFIED	NOT SPECIFIED			300 ns
TMS427400P-10DGB	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	24	TSOP2-R	2048	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS		4194304 words	YES		3.3		4	SMALL OUTLINE, THIN PROFILE				1.27 mm	70 Cel			4MX4	4M	0 Cel		DUAL	1	R-PDSO-G24	3.6 V	1.2 mm	7.62 mm	Not Qualified	16777216 bit	3 V	RAS ONLY; CAS BEFORE RAS; HIDDEN; SELF REFRESH					17.14 mm	100 ns
TMS4C1025-15DJL	Texas Instruments	NIBBLE MODE DRAM	COMMERCIAL	20	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	NIBBLE	YES	1	CMOS		J BEND	ASYNCHRONOUS		1048576 words			5		1	SMALL OUTLINE				1.27 mm	70 Cel		3-STATE	1MX1	1M	0 Cel		DUAL	1	R-PDSO-J20	5.5 V	3.76 mm	7.57 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					17.145 mm	150 ns
TMS44400PDJ-70	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	20	SOJ		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS		1048576 words	YES		5		4	SMALL OUTLINE				1.27 mm	70 Cel			1MX4	1M	0 Cel		DUAL	1	R-PDSO-J20	5.5 V	3.76 mm	7.62 mm	Not Qualified	4194304 bit	4.5 V	CAS BEFORE RAS/SELF REFRESH					17.145 mm	70 ns
5962-01-341-2450	Texas Instruments	PAGE MODE DRAM	OTHER	16	DIP	256	RECTANGULAR	CERAMIC		NO		MOS	38535Q/M;38534H;883B	THROUGH-HOLE			262144 words		SEPARATE	5	5	1	IN-LINE	DIP16,.3		DRAMs	2.54 mm	110 Cel		3-STATE	256KX1	256K	-55 Cel		DUAL		R-XDIP-T16				Not Qualified	262144 bit				NOT SPECIFIED	NOT SPECIFIED			120 ns
TMS44165-10DGE	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	40	TSOP2	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS	95 mA	262144 words	NO	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32		DRAMs	.8 mm	70 Cel		3-STATE	256KX16	256K	0 Cel		DUAL	1	R-PDSO-G40	5.5 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.001 Amp	18.41 mm	100 ns
TM16EN64HPU-40	Texas Instruments	EDO DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS		NO LEAD	ASYNCHRONOUS	2560 mA	16777216 words		COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel		3-STATE	16MX64	16M	0 Cel		DUAL	1	R-XDMA-N168	3.6 V			Not Qualified	1073741824 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				.008 Amp		20 ns
TM893GBK32-60	Texas Instruments	EDO DRAM MODULE	COMMERCIAL	72	SIMM	2048	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	MOS		NO LEAD	ASYNCHRONOUS		8388608 words			5		32	MICROELECTRONIC ASSEMBLY					70 Cel		3-STATE	8MX32	8M	0 Cel		SINGLE	1	R-XSMA-N72	5.5 V			Not Qualified	268435456 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						60 ns
TM497FBK32-60	Texas Instruments	EDO DRAM MODULE	COMMERCIAL	72	SIMM	2048	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	MOS		NO LEAD	ASYNCHRONOUS		4194304 words			5		32	MICROELECTRONIC ASSEMBLY					70 Cel		3-STATE	4MX32	4M	0 Cel		SINGLE	1	R-XSMA-N72	5.5 V			Not Qualified	134217728 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						60 ns
SMJ4C1024-12SV	Texas Instruments	FAST PAGE DRAM	MILITARY	20	ZIP	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS		1048576 words			5		1	IN-LINE				2.54 mm	125 Cel		3-STATE	1MX1	1M	-55 Cel		ZIG-ZAG	1	R-CZIP-T20	5.5 V	10.92 mm	2.92 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					26.67 mm	120 ns
TM124TBK40S-80	Texas Instruments	FAST PAGE DRAM MODULE	COMMERCIAL	72		1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS		NO LEAD	ASYNCHRONOUS		1048576 words			5		40	MICROELECTRONIC ASSEMBLY					70 Cel			1MX40	1M	0 Cel		SINGLE	1	R-XSMA-N72	5.5 V			Not Qualified	41943040 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH						80 ns
TMS46400P-80DGB	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	20	TSOP2-R	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS		1048576 words	YES		3.3		4	SMALL OUTLINE, THIN PROFILE				1.27 mm	70 Cel			1MX4	1M	0 Cel		DUAL	1	R-PDSO-G20	3.6 V	1.2 mm	7.62 mm	Not Qualified	4194304 bit	3 V	RAS ONLY; CAS BEFORE RAS; HIDDEN; SELF REFRESH					17.14 mm	80 ns
TMS4C1025-15NL	Texas Instruments	NIBBLE MODE DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	PLASTIC/EPOXY	NIBBLE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS		1048576 words			5		1	IN-LINE				2.54 mm	70 Cel		3-STATE	1MX1	1M	0 Cel		DUAL	1	R-PDIP-T18	5.5 V	5.08 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					22.48 mm	150 ns
TMS45165-10DZ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS	120 mA	262144 words	NO	COMMON	5	5	16	SMALL OUTLINE	SOJ40,.44		DRAMs	1.27 mm	70 Cel	YES	3-STATE	256KX16	256K	0 Cel		DUAL	1	R-PDSO-J40	5.5 V	3.76 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.001 Amp	26.035 mm	100 ns
TMS417809A-70DGC	Texas Instruments	EDO DRAM	COMMERCIAL	28	TSOP	2048	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		GULL WING		100 mA	2097152 words	NO	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP28,.46		DRAMs	1.27 mm	70 Cel		3-STATE	2MX8	2M	0 Cel		DUAL		R-PDSO-G28				Not Qualified	16777216 bit						.001 Amp		70 ns
TMS44101-80DM	Texas Instruments	NIBBLE MODE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	NIBBLE	YES	1	CMOS		J BEND	ASYNCHRONOUS	75 mA	4194304 words		SEPARATE	5	5	1	SMALL OUTLINE	SOJ20/26,.4		DRAMs	1.27 mm	70 Cel		3-STATE	4MX1	4M	0 Cel		DUAL	1	R-PDSO-J20	5.5 V	3.76 mm	8.89 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.001 Amp	17.145 mm	80 ns
SMJ4164-12FGE	Texas Instruments	PAGE MODE DRAM	INDUSTRIAL	18	QCCN	256	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	PAGE	YES	1	NMOS	38535Q/M;38534H;883B	NO LEAD	ASYNCHRONOUS		65536 words		SEPARATE	5	5	1	CHIP CARRIER	LCC18,.3X.43		DRAMs	1.27 mm	85 Cel		3-STATE	64KX1	64K	-40 Cel		QUAD	1	R-CQCC-N18	5.5 V	1.85 mm	7.366 mm	Not Qualified	65536 bit	4.5 V	RAS ONLY REFRESH		NOT SPECIFIED	NOT SPECIFIED		10.795 mm	120 ns
SMJ44C256-10HMM	Texas Instruments	FAST PAGE DRAM	MILITARY	20	SON	512	RECTANGULAR	CERAMIC		YES		CMOS	38535Q/M;38534H;883B	NO LEAD		65 mA	262144 words		COMMON	5	5	4	SMALL OUTLINE	SOLCC20/26,.35		DRAMs	1.27 mm	125 Cel		3-STATE	256KX4	256K	-55 Cel		DUAL		R-XDSO-N20				Not Qualified	1048576 bit				NOT SPECIFIED	NOT SPECIFIED	.003 Amp		100 ns
TMS44400PDJ-80	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	20	SOJ		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS		1048576 words	YES		5		4	SMALL OUTLINE				1.27 mm	70 Cel			1MX4	1M	0 Cel		DUAL	1	R-PDSO-J20	5.5 V	3.76 mm	7.62 mm	Not Qualified	4194304 bit	4.5 V	CAS BEFORE RAS/SELF REFRESH					17.145 mm	80 ns
5962-9062203MYX	Texas Instruments	FAST PAGE DRAM	MILITARY	20	SON		RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS	MIL-STD-883	NO LEAD	ASYNCHRONOUS		4194304 words			5		1	SMALL OUTLINE				1.27 mm	125 Cel			4MX1	4M	-55 Cel		DUAL	1	R-XDSO-N20	5.5 V	4.26 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					17.775 mm	80 ns
TMS416400A-60DGA	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	24	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS	80 mA	4194304 words	NO	COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE	TSOP24/26,.36		DRAMs	1.27 mm	70 Cel		3-STATE	4MX4	4M	0 Cel		DUAL	1	R-PDSO-G24	5.5 V	1.2 mm	7.62 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.001 Amp	17.14 mm	60 ns
TMS427800AP-70DGC	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	28	TSOP	2048	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		GULL WING		90 mA	2097152 words	YES	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP28,.46		DRAMs	1.27 mm	70 Cel		3-STATE	2MX8	2M	0 Cel		DUAL		R-PDSO-G28				Not Qualified	16777216 bit				NOT SPECIFIED	NOT SPECIFIED	.00015 Amp		70 ns
SMJ44C256-15HJL	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	20	SOJ	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS		262144 words			5		4	SMALL OUTLINE				1.27 mm	70 Cel		3-STATE	256KX4	256K	0 Cel		DUAL	1	R-CDSO-J20	5.5 V	3.48 mm	8.382 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					17.145 mm	150 ns
5962-9062203MXA	Texas Instruments	FAST PAGE DRAM	MILITARY	20	DFP		RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS	MIL-STD-883	FLAT	ASYNCHRONOUS		4194304 words			5		1	FLATPACK				1.27 mm	125 Cel			4MX1	4M	-55 Cel		DUAL	1	R-XDFP-F20	5.5 V	2.54 mm	12.45 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					17.78 mm	80 ns
TMS416169P-80DGE	Texas Instruments	EDO DRAM	COMMERCIAL	44	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS		GULL WING	ASYNCHRONOUS	70 mA	1048576 words	YES	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44/50,.46,32		DRAMs	.8 mm	70 Cel		3-STATE	1MX16	1M	0 Cel		DUAL	1	R-PDSO-G44	5.5 V	1.2 mm	10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.0005 Amp	20.95 mm	80 ns
TMS44800P-70DGC	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	28	TSOP2	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS		524288 words	YES		5		8	SMALL OUTLINE, THIN PROFILE				1.27 mm	70 Cel			512KX8	512K	0 Cel		DUAL	1	R-PDSO-G28	5.5 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN; SELF REFRESH					18.41 mm	70 ns
TM4256GU8-12L	Texas Instruments	DRAM MODULE	COMMERCIAL	30	SIMM	256	RECTANGULAR	UNSPECIFIED	PAGE	NO	1	NMOS		NO LEAD	ASYNCHRONOUS		262144 words		COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	SIM30		DRAMs	2.54 mm	70 Cel		3-STATE	256KX8	256K	0 Cel		SINGLE	1	R-XSMA-N30	5.5 V	16.51 mm		Not Qualified	2097152 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						120 ns
SMJ4464-12FVL	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	18	QCCN	256	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	PAGE	YES	1	NMOS		NO LEAD	ASYNCHRONOUS		65536 words			5		4	CHIP CARRIER				1.27 mm	70 Cel		3-STATE	64KX4	64K	0 Cel		QUAD	1	R-CQCC-N18	5.5 V	2.18 mm	7.24 mm	Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					12.32 mm	120 ns
TMS426160-80DZ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	42	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS	70 mA	1048576 words	NO	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ42,.44		DRAMs	1.27 mm	70 Cel		3-STATE	1MX16	1M	0 Cel		DUAL	1	R-PDSO-J42	3.6 V	3.76 mm	10.16 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.0005 Amp	27.305 mm	80 ns
TMS44800-80DGC	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	28	TSOP2	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS	100 mA	524288 words	NO	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP28,.46		DRAMs	1.27 mm	70 Cel		3-STATE	512KX8	512K	0 Cel		DUAL	1	R-PDSO-G28	5.5 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.001 Amp	18.41 mm	80 ns
TMS45160DZ-70	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	40	SOJ		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	SYNCHRONOUS		262144 words	YES		5		16	SMALL OUTLINE					70 Cel			256KX16	256K	0 Cel		DUAL	1	R-PDSO-J40	5.5 V			Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH						70 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.