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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Screening Level	Nominal Negative Supply Voltage	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Length	Maximum Access Time
D2164A-15	Intel	PAGE MODE DRAM	COMMERCIAL	16	DIP	128	RECTANGULAR	CERAMIC, GLASS-SEALED	PAGE	NO	1	NMOS			THROUGH-HOLE	ASYNCHRONOUS		65536 words	SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	64KX1	64K	0 Cel	TIN LEAD	DUAL	1	R-GDIP-T16	5.5 V	5.08 mm	7.62 mm	Not Qualified	65536 bit	4.5 V	RAS ONLY/HIDDEN REFRESH	e0			19.558 mm	150 ns
D2164A-20	Intel	PAGE MODE DRAM	COMMERCIAL	16	DIP	128	RECTANGULAR	CERAMIC, GLASS-SEALED	PAGE	NO	1	NMOS			THROUGH-HOLE	ASYNCHRONOUS		65536 words	SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	64KX1	64K	0 Cel	TIN LEAD	DUAL	1	R-GDIP-T16	5.5 V	5.08 mm	7.62 mm	Not Qualified	65536 bit	4.5 V	RAS ONLY/HIDDEN REFRESH	e0			19.558 mm	200 ns
MB8264A-15	Fujitsu Semiconductor America	PAGE MODE DRAM	COMMERCIAL	18	QCCN	128	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	PAGE	YES	1	NMOS			NO LEAD	ASYNCHRONOUS		65536 words		5		1	CHIP CARRIER				70 Cel	3-STATE	64KX1	64K	0 Cel		QUAD	1	R-CQCC-N18	5.5 V			Not Qualified	65536 bit	4.5 V	RAS ONLY/HIDDEN REFRESH					150 ns
MCM4116BC20	Motorola	PAGE MODE DRAM	COMMERCIAL	16	DIP	128	RECTANGULAR	CERAMIC		NO		MOS			THROUGH-HOLE			16384 words	SEPARATE		+-5,12	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	16KX1	16K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T16				Not Qualified	16384 bit			e0				200 ns
TMM416D-3	Toshiba	PAGE MODE DRAM	COMMERCIAL	16	DIP	128	RECTANGULAR	CERAMIC		NO		MOS			THROUGH-HOLE			16384 words	SEPARATE		+-5,12	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	16KX1	16K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T16				Not Qualified	16384 bit			e0				200 ns
TMM416P-4	Toshiba	PAGE MODE DRAM	COMMERCIAL	16	DIP	128	RECTANGULAR	PLASTIC/EPOXY	PAGE	NO	1	MOS			THROUGH-HOLE	ASYNCHRONOUS		16384 words	SEPARATE	12	+-5,12	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	16KX1	16K	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T16	13.2 V	5 mm	7.62 mm	Not Qualified	16384 bit	10.8 V	RAS ONLY REFRESH	e0				250 ns
M38510/24402BEA	Texas Instruments	PAGE MODE DRAM	MILITARY	16	DIP	128	RECTANGULAR	CERAMIC		NO		MOS	38535Q/M;38534H;883B		THROUGH-HOLE			65536 words	SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	125 Cel	3-STATE	64KX1	64K	-55 Cel		DUAL		R-XDIP-T16				Not Qualified	65536 bit							150 ns
5962-01-240-9245	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	16	DIP	128	RECTANGULAR	CERAMIC		NO		MOS			THROUGH-HOLE			16384 words	SEPARATE		+-5,12	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	16KX1	16K	0 Cel		DUAL		R-XDIP-T16				Not Qualified	16384 bit				NOT SPECIFIED	NOT SPECIFIED		250 ns
5962-01-177-2468	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	16	DIP	128	RECTANGULAR	PLASTIC/EPOXY		NO		MOS			THROUGH-HOLE			16384 words	SEPARATE		+-5,12	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	16KX1	16K	0 Cel		DUAL		R-PDIP-T16				Not Qualified	16384 bit				NOT SPECIFIED	NOT SPECIFIED		150 ns
TMS4116-15JDL	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	16	DIP	128	RECTANGULAR	CERAMIC		NO		MOS			THROUGH-HOLE			16384 words	SEPARATE		+-5,12	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	16KX1	16K	0 Cel		DUAL		R-XDIP-T16				Not Qualified	16384 bit				NOT SPECIFIED	NOT SPECIFIED		150 ns
5962-01-077-4284	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	16	DIP	128	RECTANGULAR	PLASTIC/EPOXY		NO		MOS			THROUGH-HOLE			16384 words	SEPARATE		+-5,12	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	16KX1	16K	0 Cel		DUAL		R-PDIP-T16				Not Qualified	16384 bit				NOT SPECIFIED	NOT SPECIFIED		200 ns
TMS4116-20JL	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	16	DIP	128	RECTANGULAR	CERAMIC		NO		MOS			THROUGH-HOLE			16384 words	SEPARATE		+-5,12	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	16KX1	16K	0 Cel		DUAL		R-XDIP-T16				Not Qualified	16384 bit				NOT SPECIFIED	NOT SPECIFIED		200 ns
TMS4116-25JDL	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	16	DIP	128	RECTANGULAR	CERAMIC		NO		MOS			THROUGH-HOLE			16384 words	SEPARATE		+-5,12	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	16KX1	16K	0 Cel		DUAL		R-XDIP-T16				Not Qualified	16384 bit				NOT SPECIFIED	NOT SPECIFIED		250 ns
5962-01-146-9697	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	16	DIP	128	RECTANGULAR	PLASTIC/EPOXY		NO		MOS			THROUGH-HOLE			16384 words	SEPARATE		+-5,12	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	16KX1	16K	0 Cel		DUAL		R-PDIP-T16				Not Qualified	16384 bit				NOT SPECIFIED	NOT SPECIFIED		200 ns
TMS4116-25NL	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	16	DIP	128	RECTANGULAR	PLASTIC/EPOXY	PAGE	NO	1	NMOS			THROUGH-HOLE	ASYNCHRONOUS		16384 words	SEPARATE	5	+-5,12	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	16KX1	16K	0 Cel		DUAL	1	R-PDIP-T16	5.5 V	5.08 mm	7.62 mm	Not Qualified	16384 bit	4.5 V	RAS ONLY REFRESH		NOT SPECIFIED	NOT SPECIFIED	19.305 mm	250 ns
5962-01-120-8932	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	16	DIP	128	RECTANGULAR	PLASTIC/EPOXY		NO		MOS			THROUGH-HOLE			16384 words	SEPARATE		+-5,12	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	16KX1	16K	0 Cel		DUAL		R-PDIP-T16				Not Qualified	16384 bit				NOT SPECIFIED	NOT SPECIFIED		200 ns
MM5290N-3	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	16	DIP	128	RECTANGULAR	PLASTIC/EPOXY		NO		MOS			THROUGH-HOLE			16384 words	SEPARATE		+-5,12	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	16KX1	16K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T16				Not Qualified	16384 bit			e0				200 ns
TMS4116-20JDL	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	16	DIP	128	RECTANGULAR	CERAMIC		NO		MOS			THROUGH-HOLE			16384 words	SEPARATE		+-5,12	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	16KX1	16K	0 Cel		DUAL		R-XDIP-T16				Not Qualified	16384 bit				NOT SPECIFIED	NOT SPECIFIED		200 ns
TMS41128B-15NL	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	16	DIP	128	RECTANGULAR	PLASTIC/EPOXY		NO		MOS			THROUGH-HOLE			131072 words	SEPARATE			1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	128KX1	128K	0 Cel		DUAL		R-PDIP-T16				Not Qualified	131072 bit							150 ns
5962-01-149-5443	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	16	DIP	128	RECTANGULAR	PLASTIC/EPOXY		NO		MOS			THROUGH-HOLE			16384 words	SEPARATE		+-5,12	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	16KX1	16K	0 Cel		DUAL		R-PDIP-T16				Not Qualified	16384 bit				NOT SPECIFIED	NOT SPECIFIED		250 ns
TMS4132-20JDL	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	18	DIP	128	RECTANGULAR	CERAMIC		NO		MOS			THROUGH-HOLE			32768 words	SEPARATE			1	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel	3-STATE	32KX1	32K	0 Cel		DUAL		R-XDIP-T18				Not Qualified	32768 bit							200 ns
5962-01-138-1209	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	16	DIP	128	RECTANGULAR	CERAMIC		NO		MOS			THROUGH-HOLE			16384 words	SEPARATE		+-5,12	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	16KX1	16K	0 Cel		DUAL		R-XDIP-T16				Not Qualified	16384 bit				NOT SPECIFIED	NOT SPECIFIED		200 ns
TMS4116-25JL	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	16	DIP	128	RECTANGULAR	CERAMIC		NO		MOS			THROUGH-HOLE			16384 words	SEPARATE		+-5,12	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	16KX1	16K	0 Cel		DUAL		R-XDIP-T16				Not Qualified	16384 bit				NOT SPECIFIED	NOT SPECIFIED		250 ns
5962-01-171-9696	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	16	DIP	128	RECTANGULAR	CERAMIC		NO		MOS			THROUGH-HOLE			16384 words	SEPARATE		+-5,12	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	16KX1	16K	0 Cel		DUAL		R-XDIP-T16				Not Qualified	16384 bit				NOT SPECIFIED	NOT SPECIFIED		150 ns
TMS4116-20NL	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	16	DIP	128	RECTANGULAR	PLASTIC/EPOXY	PAGE	NO	1	NMOS			THROUGH-HOLE	ASYNCHRONOUS		16384 words	SEPARATE	5	+-5,12	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	16KX1	16K	0 Cel		DUAL	1	R-PDIP-T16	5.5 V	5.08 mm	7.62 mm	Not Qualified	16384 bit	4.5 V	RAS ONLY REFRESH		NOT SPECIFIED	NOT SPECIFIED	19.305 mm	200 ns
TMS4116-15JL	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	16	DIP	128	RECTANGULAR	CERAMIC		NO		MOS			THROUGH-HOLE			16384 words	SEPARATE		+-5,12	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	16KX1	16K	0 Cel		DUAL		R-XDIP-T16				Not Qualified	16384 bit				NOT SPECIFIED	NOT SPECIFIED		150 ns
TMS4132-15JDL	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	18	DIP	128	RECTANGULAR	CERAMIC		NO		MOS			THROUGH-HOLE			32768 words	SEPARATE			1	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel	3-STATE	32KX1	32K	0 Cel		DUAL		R-XDIP-T18				Not Qualified	32768 bit							150 ns
TMS4132-25JDL	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	18	DIP	128	RECTANGULAR	CERAMIC		NO		MOS			THROUGH-HOLE			32768 words	SEPARATE			1	IN-LINE	DIP18,.3	DRAMs	2.54 mm	70 Cel	3-STATE	32KX1	32K	0 Cel		DUAL		R-XDIP-T18				Not Qualified	32768 bit							250 ns
TMS4116-30NL	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	16	DIP	128	RECTANGULAR	PLASTIC/EPOXY		NO		MOS			THROUGH-HOLE			16384 words	SEPARATE		+-5,12	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	16KX1	16K	0 Cel		DUAL		R-PDIP-T16				Not Qualified	16384 bit				NOT SPECIFIED	NOT SPECIFIED		300 ns
TMS4116-15NL	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	16	DIP	128	RECTANGULAR	PLASTIC/EPOXY	PAGE	NO	1	NMOS			THROUGH-HOLE	ASYNCHRONOUS		16384 words	SEPARATE	5	+-5,12	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	16KX1	16K	0 Cel		DUAL	1	R-PDIP-T16	5.5 V	5.08 mm	7.62 mm	Not Qualified	16384 bit	4.5 V	RAS ONLY REFRESH		NOT SPECIFIED	NOT SPECIFIED	19.305 mm	150 ns
HYB4116-P4	Infineon Technologies	PAGE MODE DRAM	COMMERCIAL	16	DIP	128	RECTANGULAR	PLASTIC/EPOXY		NO		MOS			THROUGH-HOLE			16384 words	SEPARATE		+-5,12	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	16KX1	16K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T16				Not Qualified	16384 bit			e0				250 ns
HYB4116-C2	Infineon Technologies	PAGE MODE DRAM	COMMERCIAL	16	DIP	128	RECTANGULAR	CERAMIC		NO		MOS			THROUGH-HOLE			16384 words	SEPARATE		+-5,12	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	16KX1	16K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T16				Not Qualified	16384 bit			e0				150 ns
HYB4116-C3	Infineon Technologies	PAGE MODE DRAM	COMMERCIAL	16	DIP	128	RECTANGULAR	CERAMIC		NO		MOS			THROUGH-HOLE			16384 words	SEPARATE		+-5,12	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	16KX1	16K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T16				Not Qualified	16384 bit			e0				200 ns
HYB4116-P3	Infineon Technologies	PAGE MODE DRAM	COMMERCIAL	16	DIP	128	RECTANGULAR	PLASTIC/EPOXY		NO	1	CMOS		-5 V	THROUGH-HOLE	ASYNCHRONOUS		16384 words	SEPARATE	5	+-5,12	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	16KX1	16K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDIP-T16	5.5 V	4.2 mm	7.62 mm	Not Qualified	16384 bit	4.5 V	REFRESH; ALSO REQUIRES VDD 12 V	e0			20.2 mm	200 ns
HYB4116-P2	Infineon Technologies	PAGE MODE DRAM	COMMERCIAL	16	DIP	128	RECTANGULAR	PLASTIC/EPOXY		NO	1	CMOS		-5 V	THROUGH-HOLE	ASYNCHRONOUS		16384 words	SEPARATE	5	+-5,12	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	16KX1	16K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDIP-T16	5.5 V	4.2 mm	7.62 mm	Not Qualified	16384 bit	4.5 V	REFRESH; ALSO REQUIRES VDD 12 V	e0			20.2 mm	150 ns
TMM4164AP-20	Toshiba	PAGE MODE DRAM	COMMERCIAL	16	DIP	128	RECTANGULAR	PLASTIC/EPOXY		NO		MOS			THROUGH-HOLE			65536 words	SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	64KX1	64K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T16				Not Qualified	65536 bit			e0				200 ns
TMM4164P-2	Toshiba	PAGE MODE DRAM	COMMERCIAL	16	DIP	128	RECTANGULAR	PLASTIC/EPOXY		NO		MOS			THROUGH-HOLE			65536 words	SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	64KX1	64K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T16				Not Qualified	65536 bit			e0				120 ns
TMM416D-4	Toshiba	PAGE MODE DRAM	COMMERCIAL	16	DIP	128	RECTANGULAR	CERAMIC		NO		MOS			THROUGH-HOLE			16384 words	SEPARATE		+-5,12	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	16KX1	16K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T16				Not Qualified	16384 bit			e0				250 ns
TMM416D-2	Toshiba	PAGE MODE DRAM	COMMERCIAL	16	DIP	128	RECTANGULAR	CERAMIC		NO		MOS			THROUGH-HOLE			16384 words	SEPARATE		+-5,12	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	16KX1	16K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T16				Not Qualified	16384 bit			e0				150 ns
TMM4164C-2	Toshiba	PAGE MODE DRAM	COMMERCIAL	16	DIP	128	RECTANGULAR	CERAMIC		NO		MOS			THROUGH-HOLE			65536 words	SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	64KX1	64K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T16				Not Qualified	65536 bit			e0				120 ns
TMM4164P-3	Toshiba	PAGE MODE DRAM	COMMERCIAL	16	DIP	128	RECTANGULAR	PLASTIC/EPOXY		NO		MOS			THROUGH-HOLE			65536 words	SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	64KX1	64K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T16				Not Qualified	65536 bit			e0				150 ns
TMM4164C-3	Toshiba	PAGE MODE DRAM	COMMERCIAL	16	DIP	128	RECTANGULAR	CERAMIC		NO		MOS			THROUGH-HOLE			65536 words	SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	64KX1	64K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T16				Not Qualified	65536 bit			e0				150 ns
TMM4164P-4	Toshiba	PAGE MODE DRAM	COMMERCIAL	16	DIP	128	RECTANGULAR	PLASTIC/EPOXY		NO		MOS			THROUGH-HOLE			65536 words	SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	64KX1	64K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T16				Not Qualified	65536 bit			e0				200 ns
TMM4164AP-15	Toshiba	PAGE MODE DRAM	COMMERCIAL	16	DIP	128	RECTANGULAR	PLASTIC/EPOXY		NO		MOS			THROUGH-HOLE			65536 words	SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	64KX1	64K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T16				Not Qualified	65536 bit			e0				150 ns
TMM416P-2	Toshiba	PAGE MODE DRAM	COMMERCIAL	16	DIP	128	RECTANGULAR	PLASTIC/EPOXY		NO		MOS			THROUGH-HOLE			16384 words	SEPARATE		+-5,12	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	16KX1	16K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T16				Not Qualified	16384 bit			e0				150 ns
TMM416P-3	Toshiba	PAGE MODE DRAM	COMMERCIAL	16	DIP	128	RECTANGULAR	PLASTIC/EPOXY		NO		MOS			THROUGH-HOLE			16384 words	SEPARATE		+-5,12	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	16KX1	16K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T16				Not Qualified	16384 bit			e0				200 ns
UPD416-2	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL	16	DIP	128	RECTANGULAR	CERAMIC		NO		MOS			THROUGH-HOLE			16384 words	SEPARATE		+-5,12	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	70 Cel	3-STATE	16KX1	16K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T16				Not Qualified	16384 bit			e0				200 ns
UPD2118D-2	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL EXTENDED	16	DIP	128	RECTANGULAR	CERAMIC		NO		MOS			THROUGH-HOLE		22 mA	16384 words	SEPARATE			1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	80 Cel	3-STATE	16KX1	16K	-10 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T16				Not Qualified	16384 bit			e0				120 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.