4096 DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
TMS416100-60DZ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	24	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS	90 mA	16777216 words		NO	SEPARATE	5	5	1	SMALL OUTLINE	SOJ24/28,.44	DRAMs	1.27 mm	70 Cel	3-STATE	16MX1	16M	0 Cel	DUAL	1	R-PDSO-J24	5.5 V	3.76 mm		10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	NOT SPECIFIED	NOT SPECIFIED	.001 Amp		18.415 mm	60 ns
TMS426400-70DJ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	24	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS	60 mA	4194304 words		NO	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ24/26,.34	DRAMs	1.27 mm	70 Cel	3-STATE	4MX4	4M	0 Cel	DUAL	1	R-PDSO-J24	3.6 V	3.76 mm		7.62 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	NOT SPECIFIED	NOT SPECIFIED	.0005 Amp		17.145 mm	70 ns
TMS426100P-70DJ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	24	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS		16777216 words		YES		3.3		1	SMALL OUTLINE			1.27 mm	70 Cel		16MX1	16M	0 Cel	DUAL	1	R-PDSO-J24	3.6 V	3.76 mm		7.57 mm	Not Qualified	16777216 bit	3 V	RAS ONLY; CAS BEFORE RAS; HIDDEN; SELF REFRESH					17.145 mm	70 ns
TMS626412A-12	Texas Instruments	SYNCHRONOUS DRAM	COMMERCIAL	44	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS		4194304 words		YES		3.3		4	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel	3-STATE	4MX4	4M	0 Cel	DUAL	1	R-PDSO-G44	3.6 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	3 V	AUTO/SELF REFRESH					18.41 mm
TMS416169-60DZ	Texas Instruments	EDO DRAM	COMMERCIAL	42	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS		J BEND	ASYNCHRONOUS	90 mA	1048576 words		NO	COMMON	5	5	16	SMALL OUTLINE	SOJ42,.44	DRAMs	1.27 mm	70 Cel	3-STATE	1MX16	1M	0 Cel	DUAL	1	R-PDSO-J42	5.5 V	3.76 mm		10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	NOT SPECIFIED	NOT SPECIFIED	.001 Amp		27.305 mm	60 ns
TM2EJ64EPN-70	Texas Instruments	EDO DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	MOS		NO LEAD	ASYNCHRONOUS	640 mA	2097152 words		NO	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	2MX64	2M	0 Cel	DUAL	1	R-XDMA-N144	3.6 V				Not Qualified	134217728 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH			.008 Amp			70 ns
TMS426100-80DGA	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	24	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS		16777216 words				3.3		1	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel		16MX1	16M	0 Cel	DUAL	1	R-PDSO-G24	3.6 V	1.2 mm		7.62 mm	Not Qualified	16777216 bit	3 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH					17.14 mm	80 ns
TMS426169-70DZ	Texas Instruments	EDO DRAM	COMMERCIAL	42	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS		J BEND	ASYNCHRONOUS	80 mA	1048576 words		NO	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ42,.44	DRAMs	1.27 mm	70 Cel	3-STATE	1MX16	1M	0 Cel	DUAL	1	R-PDSO-J42	3.6 V	3.76 mm		10.16 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	NOT SPECIFIED	NOT SPECIFIED	.0005 Amp		27.305 mm	70 ns
TMS416160-60DC	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	44	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS		1048576 words				5		16	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel		1MX16	1M	0 Cel	DUAL	1	R-PDSO-G44	5.5 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH					20.95 mm	60 ns
SMJ416100-80HKB	Texas Instruments	FAST PAGE DRAM	MILITARY	28	DFP	4096	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS		FLAT	ASYNCHRONOUS		16777216 words				5		1	FLATPACK			1.27 mm	125 Cel	3-STATE	16MX1	16M	-55 Cel	DUAL	1	R-CDFP-F28	5.5 V	3.32 mm		11.43 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					19.655 mm	80 ns
TMS426169AP-50DZ	Texas Instruments	EDO DRAM	COMMERCIAL	42	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS		J BEND	ASYNCHRONOUS	130 mA	1048576 words		YES	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ42,.44	DRAMs	1.27 mm	70 Cel	3-STATE	1MX16	1M	0 Cel	DUAL	1	R-PDSO-J42	3.6 V	3.76 mm		10.16 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/BATTERY BACKUP/SELF REFRESH	NOT SPECIFIED	NOT SPECIFIED	.00015 Amp		27.305 mm	50 ns
TMS636802DGE-12	Texas Instruments	SYNCHRONOUS DRAM	COMMERCIAL	44	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		GULL WING		160 mA	2097152 words	1,2,4,8		COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	2MX8	2M	0 Cel	DUAL		R-PDSO-G44			80 MHz		Not Qualified	16777216 bit					.003 Amp	1,2,4,8		10 ns
TMS416400-80DGA	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	24	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS	60 mA	4194304 words		NO	COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE	TSOP24/26,.36	DRAMs	1.27 mm	70 Cel	3-STATE	4MX4	4M	0 Cel	DUAL	1	R-PDSO-G24	5.5 V	1.2 mm		7.62 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	NOT SPECIFIED	NOT SPECIFIED	.001 Amp		17.14 mm	80 ns
TMS426160-70DZ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	42	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS	80 mA	1048576 words		NO	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ42,.44	DRAMs	1.27 mm	70 Cel	3-STATE	1MX16	1M	0 Cel	DUAL	1	R-PDSO-J42	3.6 V	3.76 mm		10.16 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	NOT SPECIFIED	NOT SPECIFIED	.0005 Amp		27.305 mm	70 ns
SMJ416400-60HKBM	Texas Instruments	FAST PAGE DRAM	MILITARY	28	DFP	4096	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS		FLAT	ASYNCHRONOUS		4194304 words				5		4	FLATPACK			1.27 mm	125 Cel		4MX4	4M	-55 Cel	DUAL	1	R-CDFP-F28	5.5 V	3.32 mm		11.43 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH					19.685 mm	60 ns
SMJ416160-70HKDM	Texas Instruments	FAST PAGE DRAM	MILITARY	50	DFP	4096	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE WITH EDO	YES	1	MOS	38535Q/M;38534H;883B	FLAT	ASYNCHRONOUS	80 mA	1048576 words		NO	COMMON	5	5	16	FLATPACK	FL50,.67,32	DRAMs	.8 mm	125 Cel	3-STATE	1MX16	1M	-55 Cel	DUAL	1	R-CDFP-F50	5.5 V	3.55 mm		16.5 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	NOT SPECIFIED	NOT SPECIFIED	.001 Amp		21 mm	70 ns
TMS426400-80DJ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	24	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS	50 mA	4194304 words		NO	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ24/26,.34	DRAMs	1.27 mm	70 Cel	3-STATE	4MX4	4M	0 Cel	DUAL	1	R-PDSO-J24	3.6 V	3.76 mm		7.62 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	NOT SPECIFIED	NOT SPECIFIED	.0005 Amp		17.145 mm	80 ns
TMS426400P-60DGB	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	24	TSOP2-R	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS		4194304 words		YES		3.3		4	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel		4MX4	4M	0 Cel	DUAL	1	R-PDSO-G24	3.6 V	1.2 mm		7.62 mm	Not Qualified	16777216 bit	3 V	RAS ONLY; CAS BEFORE RAS; HIDDEN; SELF REFRESH					17.14 mm	60 ns
SMJ626162-20HKDM	Texas Instruments	SYNCHRONOUS DRAM	MILITARY	50	DFP	4096	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	DUAL BANK PAGE BURST	YES	1	CMOS		FLAT	SYNCHRONOUS		1048576 words				3.3		16	FLATPACK			.8 mm	125 Cel	3-STATE	1MX16	1M	-55 Cel	DUAL	1	R-CDFP-F50	3.465 V	3.55 mm		16.5 mm	Not Qualified	16777216 bit	3.135 V	AUTO REFRESH					21 mm	10 ns
TMS426100-70DGB	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	24	TSOP2-R	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS		16777216 words				3.3		1	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel		16MX1	16M	0 Cel	DUAL	1	R-PDSO-G24	3.6 V	1.2 mm		7.62 mm	Not Qualified	16777216 bit	3 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH					17.14 mm	70 ns
TMS636402DGE-12	Texas Instruments	SYNCHRONOUS DRAM	COMMERCIAL	44	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		GULL WING		150 mA	4194304 words			COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX4	4M	0 Cel	DUAL		R-PDSO-G44			80 MHz		Not Qualified	16777216 bit					.003 Amp			10 ns
TMS416409A-70DGA	Texas Instruments	EDO DRAM	COMMERCIAL	24	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS		GULL WING	ASYNCHRONOUS	80 mA	4194304 words		NO	COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE	TSOP24/26,.36	DRAMs	1.27 mm	70 Cel	3-STATE	4MX4	4M	0 Cel	DUAL	1	R-PDSO-G24	5.5 V	1.2 mm		7.62 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	NOT SPECIFIED	NOT SPECIFIED	.001 Amp		17.14 mm	70 ns
TMS416400-70DGB	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	24	TSOP2-R	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS		4194304 words				5		4	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel		4MX4	4M	0 Cel	DUAL	1	R-PDSO-G24	5.5 V	1.2 mm		7.62 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY; CAS BEFORE RAS REFRESH					17.14 mm	70 ns
TMS426160-60DGE	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	44	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS	90 mA	1048576 words		NO	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44/50,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	1MX16	1M	0 Cel	DUAL	1	R-PDSO-G44	3.6 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	NOT SPECIFIED	NOT SPECIFIED	.0005 Amp		20.95 mm	60 ns
TMS416100P-70DJ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	24	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS		16777216 words				5		1	SMALL OUTLINE			1.27 mm	70 Cel		16MX1	16M	0 Cel	DUAL	1	R-PDSO-J24	5.5 V	3.76 mm		7.62 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					17.145 mm	70 ns
TMS416100-60DGA	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	24	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS	90 mA	16777216 words		NO	SEPARATE	5	5	1	SMALL OUTLINE, THIN PROFILE	TSOP28,.34	DRAMs	1.27 mm	70 Cel	3-STATE	16MX1	16M	0 Cel	DUAL	1	R-PDSO-G24	5.5 V	1.2 mm		7.62 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	NOT SPECIFIED	NOT SPECIFIED	.001 Amp		17.14 mm	60 ns
TM2EJ64EPN-50	Texas Instruments	EDO DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	MOS		NO LEAD	ASYNCHRONOUS	800 mA	2097152 words		NO	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	2MX64	2M	0 Cel	DUAL	1	R-XDMA-N144	3.6 V				Not Qualified	134217728 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH			.008 Amp			50 ns
TMS626162-12DGE	Texas Instruments	SYNCHRONOUS DRAM	COMMERCIAL	50	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	MOS		GULL WING	SYNCHRONOUS	170 mA	1048576 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP50,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	1MX16	1M	0 Cel	DUAL	1	R-PDSO-G50	3.6 V	1.2 mm	83 MHz	10.16 mm	Not Qualified	16777216 bit	3 V	AUTO/SELF REFRESH	NOT SPECIFIED	NOT SPECIFIED	.002 Amp	1,2,4,8	20.95 mm	9 ns
TM8SK64JPN-10	Texas Instruments	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS	200 mA	8388608 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel	3-STATE	8MX64	8M	0 Cel	DUAL	1	R-XDMA-N144	3.6 V	28.702 mm	100 MHz		Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH			.001 Amp			7.5 ns
TM4EP72CPB-60	Texas Instruments	EDO DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS		NO LEAD	ASYNCHRONOUS	1620 mA	4194304 words		NO	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	Other Memory ICs	1.27 mm	70 Cel	3-STATE	4MX72	4M	0 Cel	DUAL	1	R-XDMA-N168	3.6 V				Not Qualified	301989888 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH			.018 Amp			60 ns
TMS426160P-80DGE	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	44	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS	70 mA	1048576 words		YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44/50,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	1MX16	1M	0 Cel	DUAL	1	R-PDSO-G44	3.6 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH	NOT SPECIFIED	NOT SPECIFIED	.0002 Amp		20.95 mm	80 ns
TMS636402DGE-10	Texas Instruments	SYNCHRONOUS DRAM	COMMERCIAL	44	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		GULL WING		160 mA	4194304 words			COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX4	4M	0 Cel	DUAL		R-PDSO-G44			100 MHz		Not Qualified	16777216 bit					.003 Amp			8 ns
TMS416800-70DE	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	32	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS		2097152 words				5		8	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel		2MX8	2M	0 Cel	DUAL	1	R-PDSO-G32	5.5 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH					20.95 mm	70 ns
TMS426100P-10DGB	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	24	TSOP2-R	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS		16777216 words		YES		3.3		1	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel		16MX1	16M	0 Cel	DUAL	1	R-PDSO-G24	3.6 V	1.2 mm		7.62 mm	Not Qualified	16777216 bit	3 V	RAS ONLY; CAS BEFORE RAS; HIDDEN; SELF REFRESH					17.14 mm	100 ns
TMS426169A-70DZ	Texas Instruments	EDO DRAM	COMMERCIAL	42	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS		J BEND	ASYNCHRONOUS	100 mA	1048576 words		NO	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ42,.44	DRAMs	1.27 mm	70 Cel	3-STATE	1MX16	1M	0 Cel	DUAL	1	R-PDSO-J42	3.6 V	3.76 mm		10.16 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	NOT SPECIFIED	NOT SPECIFIED	.001 Amp		27.305 mm	70 ns
TMS465169P-60DGE	Texas Instruments	EDO DRAM	COMMERCIAL	50	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	MOS		GULL WING	ASYNCHRONOUS	110 mA	4194304 words		YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP50,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX16	4M	0 Cel	DUAL	1	R-PDSO-G50	3.6 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	NOT SPECIFIED	NOT SPECIFIED	.00015 Amp		20.95 mm	60 ns
TMS416400-70DGA	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	24	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS	70 mA	4194304 words		NO	COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE	TSOP24/26,.36	DRAMs	1.27 mm	70 Cel	3-STATE	4MX4	4M	0 Cel	DUAL	1	R-PDSO-G24	5.5 V	1.2 mm		7.62 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	NOT SPECIFIED	NOT SPECIFIED	.001 Amp		17.14 mm	70 ns
TMS416160-70DC	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	44	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS		1048576 words				5		16	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel		1MX16	1M	0 Cel	DUAL	1	R-PDSO-G44	5.5 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH					20.95 mm	70 ns
TMS426100-70DJ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	24	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS		16777216 words				3.3		1	SMALL OUTLINE			1.27 mm	70 Cel		16MX1	16M	0 Cel	DUAL	1	R-PDSO-J24	3.6 V	3.76 mm		7.57 mm	Not Qualified	16777216 bit	3 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH					17.145 mm	70 ns
TMS416409-60DJ	Texas Instruments	EDO DRAM	COMMERCIAL	24	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS		J BEND	ASYNCHRONOUS		4194304 words				5		4	SMALL OUTLINE			1.27 mm	70 Cel	3-STATE	4MX4	4M	0 Cel	DUAL	1	R-PDSO-J24	5.5 V	3.76 mm		7.62 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					17.145 mm	60 ns
TM8FJ64KPU-50	Texas Instruments	EDO DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS		NO LEAD	ASYNCHRONOUS	524 mA	8388608 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX64	8M	0 Cel	DUAL	1	R-XDMA-N144	3.6 V				Not Qualified	536870912 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH			.0012 Amp			50 ns
TMS626162-12ADGE	Texas Instruments	SYNCHRONOUS DRAM	COMMERCIAL	50	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	MOS		GULL WING	SYNCHRONOUS	170 mA	1048576 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP50,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	1MX16	1M	0 Cel	DUAL	1	R-PDSO-G50	3.6 V	1.2 mm	83 MHz	10.16 mm	Not Qualified	16777216 bit	3 V	AUTO/SELF REFRESH	NOT SPECIFIED	NOT SPECIFIED	.002 Amp	1,2,4,8	20.95 mm	9 ns
TMS626802-10DGE	Texas Instruments	SYNCHRONOUS DRAM	COMMERCIAL	44	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS		2097152 words		YES		3.3		8	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel	3-STATE	2MX8	2M	0 Cel	DUAL	1	R-PDSO-G44	3.6 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	3 V	CAS BEFORE RAS/SELF REFRESH					18.41 mm
TMS426160AP-50DGE	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	44	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		GULL WING		110 mA	1048576 words		YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44/50,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	1MX16	1M	0 Cel	DUAL		R-PDSO-G44					Not Qualified	16777216 bit			NOT SPECIFIED	NOT SPECIFIED	.00015 Amp			50 ns
TMS426160-80DC	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	44	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS		1048576 words				3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel		1MX16	1M	0 Cel	DUAL	1	R-PDSO-G44	3.6 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	3 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH					20.95 mm	80 ns
TMS664414-12DGE	Texas Instruments	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS		16777216 words		YES		3.3		4	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel	3-STATE	16MX4	16M	0 Cel	DUAL	1	R-PDSO-G54	3.6 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/AUTO/SELF REFRESH					22.22 mm
TMS426400P-70DJ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	24	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS	60 mA	4194304 words		YES	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ24/26,.34	DRAMs	1.27 mm	70 Cel	3-STATE	4MX4	4M	0 Cel	DUAL	1	R-PDSO-J24	3.6 V	3.76 mm		7.62 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/BATTERY BACKUP/SELF REFRESH	NOT SPECIFIED	NOT SPECIFIED	.0001 Amp		17.145 mm	70 ns
TMS426409AP-50DGA	Texas Instruments	EDO DRAM	COMMERCIAL	24	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS		GULL WING	ASYNCHRONOUS		4194304 words		YES		3.3		4	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel	3-STATE	4MX4	4M	0 Cel	DUAL	1	R-PDSO-G24	3.6 V	1.2 mm		7.62 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/BATTERY BACKUP/SELF REFRESH					17.14 mm	50 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.