4096 DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
TC5116400FT-60	Toshiba	FAST PAGE DRAM	COMMERCIAL	24	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		4194304 words				5		4	SMALL OUTLINE, THIN PROFILE				1.27 mm	70 Cel		4MX4	4M	TIN LEAD	DUAL	1	R-PDSO-G24	5.5 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0			18.41 mm	60 ns
TC59S6408FTL-10	Toshiba	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	190 mA	8388608 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	8MX8	8M	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G54	3.6 V	1.2 mm	100 MHz	10.16 mm	Not Qualified	67108864 bit	3 V	AUTO/SELF REFRESH	e0	.002 Amp	1,2,4,8	22.22 mm	8 ns
THMY721630BEG-80	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		16777216 words		YES	COMMON	3.3	3.3	4	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	16MX4	16M		DUAL	1	R-XDMA-N168	3.45 V	43.374 mm	125 MHz	4 mm	Not Qualified	67108864 bit	3.15 V	AUTO/SELF REFRESH; WD-MAX				133.35 mm	6.5 ns
TC59S6404AFT-7	Toshiba	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING			16777216 words	1,2,4,8,FP		COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	16MX4	16M	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G54			142 MHz		Not Qualified	67108864 bit			e0		1,2,4,8		5 ns
THLY64N11A75	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	640 mA	8388608 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32		DRAMs	.8 mm	70 Cel	3-STATE	8MX64	8M		DUAL	1	R-XDMA-N144	3.6 V	25.4 mm	133 MHz		Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH		.004 Amp			5.4 ns
TC5165165BFTS-40	Toshiba	EDO DRAM	COMMERCIAL	50	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS	120 mA	4194304 words		YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP50,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	4MX16	4M	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G50	3.6 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	3 V		e0	.0002 Amp		20.95 mm	40 ns
TC59S6432CFTL-70	Toshiba	SYNCHRONOUS DRAM	COMMERCIAL	86	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	145 mA	2097152 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	SMALL OUTLINE, THIN PROFILE	TSSOP86,.46,20		DRAMs	.5 mm	70 Cel	3-STATE	2MX32	2M	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G86	3.6 V	1.2 mm	133 MHz	10.16 mm	Not Qualified	67108864 bit	3 V	AUTO/SELF REFRESH	e0	.001 Amp	1,2,4,8	22.22 mm	5.4 ns
TC59S6417BFT-65	Toshiba	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING			4194304 words	1,2,4,8,FP		COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	4MX16	4M	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G54			153 MHz		Not Qualified	67108864 bit			e0	.002 Amp	1,2,4,8		4.5 ns
TC59S6408CFTL-10	Toshiba	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	95 mA	8388608 words	1,2,4,8,FP		COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	8MX8	8M	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G54	3.6 V	1.2 mm	100 MHz	10.16 mm	Not Qualified	67108864 bit	3 V		e0	.001 Amp	1,2,4,8	22.22 mm	7 ns
THLY724031BFG-10L	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	550 mA	4194304 words			COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM144,32		DRAMs	.8 mm	70 Cel	3-STATE	4MX72	4M		DUAL	1	R-XDMA-N144	3.6 V		100 MHz		Not Qualified	301989888 bit	3 V			.005 Amp			7 ns
TC5164805AFT-50	Toshiba	EDO DRAM	COMMERCIAL	32	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS		8388608 words				3.3		8	SMALL OUTLINE, THIN PROFILE				1.27 mm	70 Cel	3-STATE	8MX8	8M	TIN LEAD	DUAL	1	R-PDSO-G32	3.6 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	3 V	CAS BEFORE RAS/HIDDEN REFRESH	e0			20.95 mm	50 ns
TC59S6404CFTL-75	Toshiba	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	120 mA	16777216 words	1,2,4,8,FP		COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	16MX4	16M	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G54	3.6 V	1.2 mm	133 MHz	10.16 mm	Not Qualified	67108864 bit	3 V		e0	.001 Amp	1,2,4,8	22.22 mm	5.4 ns
TC5165805AJS-50	Toshiba	EDO DRAM	COMMERCIAL	32	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS		8388608 words		YES		3.3		8	SMALL OUTLINE				1.27 mm	70 Cel	3-STATE	8MX8	8M	TIN LEAD	DUAL	1	R-PDSO-J32	3.6 V	3.7 mm		10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	e0			20.96 mm	50 ns
TC59S6432DFTL-50	Toshiba	SYNCHRONOUS DRAM	COMMERCIAL	86	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	180 mA	2097152 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	SMALL OUTLINE, THIN PROFILE	TSSOP86,.46,20		DRAMs	.5 mm	70 Cel	3-STATE	2MX32	2M	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G86	3.6 V	1.2 mm	200 MHz	10.16 mm	Not Qualified	67108864 bit	3 V	AUTO/SELF REFRESH	e0	.001 Amp	1,2,4,8	22.22 mm	5.4 ns
TC5164805AFTS-50	Toshiba	EDO DRAM	COMMERCIAL	32	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS		8388608 words		YES		3.3		8	SMALL OUTLINE, THIN PROFILE				1.27 mm	70 Cel	3-STATE	8MX8	8M	TIN LEAD	DUAL	1	R-PDSO-G32	3.6 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	3 V	CAS BEFORE RAS/HIDDEN/SELF REFRESH	e0			20.95 mm	50 ns
THMY6480H1EG-75	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	760 mA	8388608 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	8MX64	8M		DUAL	1	R-XDMA-N168	3.6 V		133 MHz		Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH		.004 Amp			5.4 ns
TC5116405BSJ-60	Toshiba	EDO DRAM	COMMERCIAL	24	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		80 mA	4194304 words		NO	COMMON	5	5	4	SMALL OUTLINE	SOJ24/26,.34		DRAMs	1.27 mm	70 Cel	3-STATE	4MX4	4M	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J24					Not Qualified	16777216 bit			e0	.001 Amp			60 ns
THLY648021BFG-80	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	760 mA	8388608 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32		DRAMs	.8 mm	70 Cel	3-STATE	8MX64	8M		DUAL	1	R-XDMA-N144	3.6 V		125 MHz		Not Qualified	536870912 bit	3 V			.002 Amp			6 ns
TC59S6408BFTL-80	Toshiba	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	140 mA	8388608 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	8MX8	8M	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G54	3.6 V	1.2 mm	125 MHz	10.16 mm	Not Qualified	67108864 bit	3 V	AUTO/SELF REFRESH	e0	.001 Amp	1,2,4,8	22.22 mm	6 ns
TC59S6432CFT-10	Toshiba	SYNCHRONOUS DRAM	COMMERCIAL	86	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	115 mA	2097152 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	SMALL OUTLINE, THIN PROFILE	TSSOP86,.46,20		DRAMs	.5 mm	70 Cel	3-STATE	2MX32	2M	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G86	3.6 V	1.2 mm	100 MHz	10.16 mm	Not Qualified	67108864 bit	3 V	AUTO/SELF REFRESH	e0	.001 Amp	1,2,4,8	22.22 mm	7 ns
TC51V16400BST-60	Toshiba	FAST PAGE DRAM	COMMERCIAL	24	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		80 mA	4194304 words		NO	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP24/26,.36		DRAMs	1.27 mm	70 Cel	3-STATE	4MX4	4M	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G24					Not Qualified	16777216 bit			e0	.0005 Amp			60 ns
THM3680A0SG-70	Toshiba	FAST PAGE DRAM MODULE	COMMERCIAL	72		4096	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		8388608 words				5		36	MICROELECTRONIC ASSEMBLY					70 Cel		8MX36	8M		SINGLE	1	R-XSMA-N72	5.5 V				Not Qualified	301989888 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH					70 ns
TC59SM704AFTL-70	Toshiba	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	170 mA	33554432 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	32MX4	32M	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G54	3.6 V	1.2 mm	143 MHz	10.16 mm	Not Qualified	134217728 bit	3 V	AUTO/SELF REFRESH	e0	.001 Amp	1,2,4,8	22.22 mm	5.4 ns
TC59S6416CFTL-80	Toshiba	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	110 mA	4194304 words	1,2,4,8,FP		COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	4MX16	4M	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G54	3.6 V	1.2 mm	125 MHz	10.16 mm	Not Qualified	67108864 bit	3 V		e0	.001 Amp	1,2,4,8	22.22 mm	6 ns
THMY648071BEG-80	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1120 mA	8388608 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	8MX64	8M		DUAL	1	R-XDMA-N168	3.6 V	30.48 mm	125 MHz		Not Qualified	536870912 bit	3 V			.008 Amp			6 ns
TC59S6416BFTL-10	Toshiba	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	110 mA	4194304 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	4MX16	4M	TIN LEAD	DUAL	1	R-PDSO-G54	3.6 V	1.2 mm	100 MHz	10.16 mm	Not Qualified	67108864 bit	3 V	AUTO/SELF REFRESH	e0	.001 Amp	1,2,4,8	22.22 mm	7 ns
THMY721691EG-10	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	UNSPECIFIED	SYNCHRONOUS	1350 mA	16777216 words		YES	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	16MX72	16M		DUAL	1	R-XDMA-X168	3.6 V	30.48 mm	100 MHz	2.8 mm	Not Qualified	1207959552 bit	3 V	AUTO/SELF REFRESH		.009 Amp		133.35 mm	7 ns
THLY648051FG-10	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	UNSPECIFIED	SYNCHRONOUS	600 mA	8388608 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32		DRAMs	.8 mm	70 Cel	3-STATE	8MX64	8M		DUAL	1	R-XDMA-X144	3.6 V	25.4 mm	100 MHz		Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH		.004 Amp			7 ns
TC5164405AJ-50	Toshiba	EDO DRAM	COMMERCIAL	32	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS		16777216 words				3.3		4	SMALL OUTLINE				1.27 mm	70 Cel	3-STATE	16MX4	16M		DUAL	1	R-PDSO-J32	3.6 V	3.7 mm		10.16 mm	Not Qualified	67108864 bit	3 V	CAS BEFORE RAS/HIDDEN REFRESH				20.96 mm	50 ns
THLY12N01A80	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1200 mA	16777216 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32		DRAMs	.8 mm	70 Cel	3-STATE	16MX64	16M		DUAL	1	R-XDMA-N144	3.6 V		125 MHz		Not Qualified	1073741824 bit	3 V	AUTO/SELF REFRESH		.008 Amp			6 ns
TC59S6408AFT-10	Toshiba	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING			8388608 words	1,2,4,8,FP		COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	8MX8	8M	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G54			100 MHz		Not Qualified	67108864 bit			e0		1,2,4,8		7.5 ns
TC5116405CST-50	Toshiba	EDO DRAM	COMMERCIAL	24	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS		4194304 words				5		4	SMALL OUTLINE, THIN PROFILE				1.27 mm	70 Cel	3-STATE	4MX4	4M		DUAL	1	R-PDSO-G24	5.5 V	1.2 mm		7.7 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				17.14 mm	50 ns
THMY51E2SA75	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	6129 mA	134217728 words		YES	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	128MX72	128M		DUAL	1	R-XDMA-N168	3.6 V	43.05 mm	133 MHz	6.35 mm	Not Qualified	9663676416 bit	3 V	AUTO/SELF REFRESH		.067 Amp		133.35 mm	5.4 ns
THM65V4075ATG-4	Toshiba	EDO DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	640 mA	4194304 words		NO	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168	32	DRAMs	1.27 mm	70 Cel	3-STATE	4MX64	4M		DUAL	1	R-XDMA-N168	3.47 V	25.4 mm			Not Qualified	268435456 bit	3.13 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		.002 Amp			40 ns
THMY6416H1EG-75	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1520 mA	16777216 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	16MX64	16M		DUAL	1	R-XDMA-N168	3.6 V		133 MHz		Not Qualified	1073741824 bit	3 V	AUTO/SELF REFRESH		.008 Amp			5.4 ns
THMY25E10A70	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	3429 mA	33554432 words		YES	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	32MX72	32M		DUAL	1	R-XDMA-N168	3.6 V		143 MHz		Not Qualified	2415919104 bit	3 V	AUTO/SELF REFRESH		.049 Amp			5.4 ns
TC59S6416BFTL-80	Toshiba	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	140 mA	4194304 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	4MX16	4M	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G54	3.6 V	1.2 mm	125 MHz	10.16 mm	Not Qualified	67108864 bit	3 V	AUTO/SELF REFRESH	e0	.001 Amp	1,2,4,8	22.22 mm	6 ns
TC5164165AFT-60	Toshiba	EDO DRAM	COMMERCIAL	50	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS		4194304 words				3.3		16	SMALL OUTLINE, THIN PROFILE				.8 mm	70 Cel	3-STATE	4MX16	4M		DUAL	1	R-PDSO-G50	3.6 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	3 V	CAS BEFORE RAS/HIDDEN REFRESH				20.95 mm	60 ns
TC59S6432DFTL-70	Toshiba	SYNCHRONOUS DRAM	COMMERCIAL	86	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	140 mA	2097152 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	SMALL OUTLINE, THIN PROFILE	TSSOP86,.46,20		DRAMs	.5 mm	70 Cel	3-STATE	2MX32	2M	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G86	3.6 V	1.2 mm	143 MHz	10.16 mm	Not Qualified	67108864 bit	3 V	AUTO/SELF REFRESH	e0	.001 Amp	1,2,4,8	22.22 mm	5.4 ns
TC59S6416AFT-8	Toshiba	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING			4194304 words	1,2,4,8,FP		COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	4MX16	4M	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G54			125 MHz		Not Qualified	67108864 bit			e0		1,2,4,8		6 ns
THLY12N01A75	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1280 mA	16777216 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32		DRAMs	.8 mm	70 Cel	3-STATE	16MX64	16M		DUAL	1	R-XDMA-N144	3.6 V		133 MHz		Not Qualified	1073741824 bit	3 V	AUTO/SELF REFRESH		.008 Amp			5.4 ns
TC5116160AJ-60	Toshiba	FAST PAGE DRAM	COMMERCIAL	42	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		1048576 words				5		16	SMALL OUTLINE				1.27 mm	70 Cel		1MX16	1M	TIN LEAD	DUAL	1	R-PDSO-J42	5.5 V	3.7 mm		10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0			27.31 mm	60 ns
TC5164405AFT-50	Toshiba	EDO DRAM	COMMERCIAL	32	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS		16777216 words				3.3		4	SMALL OUTLINE, THIN PROFILE				1.27 mm	70 Cel	3-STATE	16MX4	16M		DUAL	1	R-PDSO-G32	3.6 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	3 V	CAS BEFORE RAS/HIDDEN REFRESH				20.95 mm	50 ns
THM65V4095ATG-4	Toshiba	EDO DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	640 mA	4194304 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168	32	DRAMs	1.27 mm	70 Cel	3-STATE	4MX64	4M		DUAL	1	R-XDMA-N168	3.47 V				Not Qualified	268435456 bit	3.13 V	CAS BEFORE RAS/HIDDEN REFRESH		.002 Amp			40 ns
THLY648051FG-10L	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	UNSPECIFIED	SYNCHRONOUS	600 mA	8388608 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32		DRAMs	.8 mm	70 Cel	3-STATE	8MX64	8M		DUAL	1	R-XDMA-X144	3.6 V	25.4 mm	100 MHz		Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH		.004 Amp			7 ns
THMY7216H1EG-80	Toshiba	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1620 mA	16777216 words		YES	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	16MX72	16M		DUAL	1	R-XDMA-N168	3.6 V		125 MHz		Not Qualified	1207959552 bit	3 V	AUTO/SELF REFRESH		.009 Amp			6 ns
TC5116180AFT-70	Toshiba	FAST PAGE DRAM	COMMERCIAL	44	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		1048576 words				5		18	SMALL OUTLINE, THIN PROFILE				.8 mm	70 Cel		1MX18	1M	TIN LEAD	DUAL	1	R-PDSO-G44	5.5 V	1.2 mm		10.16 mm	Not Qualified	18874368 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0			20.95 mm	70 ns
THL64V8015ATG-4	Toshiba	EDO DRAM MODULE	COMMERCIAL	144		4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		8388608 words				3.3		64	MICROELECTRONIC ASSEMBLY					70 Cel	3-STATE	8MX64	8M		ZIG-ZAG	1	R-XZMA-N144	3.47 V				Not Qualified	536870912 bit	3.13 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					40 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.