4096 DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Surface Mount	Technology	Terminal Form	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Terminal Finish	Terminal Position	JESD-30 Code	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Qualification	Memory Density	JESD-609 Code	Maximum Standby Current	Interleaved Burst Length	Maximum Access Time
MC-45V8AD64S-A10	Renesas Electronics	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD	560 mA	8388608 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel		3-STATE	8MX64	8M		DUAL	R-PDMA-N144		100 MHz	Not Qualified	536870912 bit		.004 Amp		6 ns
MC-458CB646-EFB-A80	Renesas Electronics	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD	880 mA	8388608 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel		3-STATE	8MX64	8M		DUAL	R-PDMA-N168		125 MHz	Not Qualified	536870912 bit		.002 Amp		6 ns
UPD4565161G5-A80AL-9JF	Renesas Electronics	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	185 mA	4194304 words	1,2,4,8,16		COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	70 Cel		3-STATE	4MX16	4M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G54		125 MHz	Not Qualified	67108864 bit	e0	.001 Amp	1,2,4,8,16	5.5 ns
UPD4564841G5-A80-9JF	Renesas Electronics	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	135 mA	8388608 words	1,2,4,8,FP		COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	70 Cel		3-STATE	8MX8	8M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G54		125 MHz	Not Qualified	67108864 bit	e0	.0005 Amp	1,2,4,8	6 ns
UPD4565421G5-A80BL-9JF	Renesas Electronics	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	105 mA	16777216 words	1,2,4,8,16		COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	70 Cel		3-STATE	16MX4	16M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G54		125 MHz	Not Qualified	67108864 bit	e0	.001 Amp	1,2,4,8,16	5.5 ns
MC-458DA726LFB-A10	Renesas Electronics	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD	1515 mA	8388608 words			COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel		3-STATE	8MX72	8M		DUAL	R-PDMA-N168		100 MHz	Not Qualified	603979776 bit		.081 Amp		6 ns
UPD4216160LG5-A70	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	44	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	80 mA	1048576 words		NO	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44/50,.46,32	DRAMs	.8 mm	70 Cel		3-STATE	1MX16	1M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G44			Not Qualified	16777216 bit	e0	.0005 Amp		70 ns
UPD42S16900V-70	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	32	ZIP	4096	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	THROUGH-HOLE	90 mA	2097152 words		YES	COMMON	5	5	9	IN-LINE	ZIP32,.1	DRAMs	1.27 mm	70 Cel		3-STATE	2MX9	2M	Tin/Lead (Sn/Pb)	ZIG-ZAG	R-PZIP-T32			Not Qualified	18874368 bit	e0	.0004 Amp		70 ns
UPD45D128442G5-C12-9LG	Renesas Electronics	DDR1 DRAM	COMMERCIAL	66	TSSOP	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	290 mA	33554432 words	2,4,8		COMMON	2.5	2.5	4	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.635 mm	70 Cel		3-STATE	32MX4	32M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G66		100 MHz	Not Qualified	134217728 bit	e0	.025 Amp	2,4,8	1 ns
UPD4216400LG3M-A80	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	24	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	60 mA	4194304 words		NO	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP24/26,.36	DRAMs	1.27 mm	70 Cel	YES	3-STATE	4MX4	4M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G24			Not Qualified	16777216 bit	e0	.0005 Amp		80 ns
UPD42S16900LLE-A70	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	32	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	80 mA	2097152 words		YES	COMMON	3.3	3.3	9	SMALL OUTLINE	SOJ32,.44	DRAMs	1.27 mm	70 Cel		3-STATE	2MX9	2M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J32			Not Qualified	18874368 bit	e0	.0001 Amp		70 ns
MC-4516CB64S-10	Renesas Electronics	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD	2000 mA	16777216 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel		3-STATE	16MX64	16M		DUAL	R-PDMA-N144		100 MHz	Not Qualified	1073741824 bit		.004 Amp		6 ns
MC-458CB644FA-A10	Renesas Electronics	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD	880 mA	8388608 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel		3-STATE	8MX64	8M		DUAL	R-PDMA-N168	25.4 mm	100 MHz	Not Qualified	536870912 bit		.016 Amp		8 ns
UPD4216160G5-80-7JF	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	44	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	80 mA	1048576 words		NO	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44/50,.46,32	DRAMs	.8 mm	70 Cel		3-STATE	1MX16	1M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G44			Not Qualified	16777216 bit	e0	.001 Amp		80 ns
MC-424FG641F-70	Renesas Electronics	EDO DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD	1280 mA	4194304 words		NO	COMMON	5	5	64	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel		3-STATE	4MX64	4M		DUAL	R-PDMA-N168	25.4 mm		Not Qualified	268435456 bit		.016 Amp		70 ns
UPD42S16160G5-70	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	44	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	90 mA	1048576 words		YES	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44/50,.46,32	DRAMs	.8 mm	70 Cel		3-STATE	1MX16	1M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G44			Not Qualified	16777216 bit	e0	.00025 Amp		70 ns
UPD4565822G5-A70BL-9JF	Renesas Electronics	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	140 mA	8388608 words	1,2,4,8,16		COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	70 Cel		3-STATE	8MX8	8M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G54		142.8 MHz	Not Qualified	67108864 bit	e0	.001 Amp	1,2,4,8,16	4.5 ns
UPD4216100G3M-60	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	24	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	90 mA	16777216 words		NO	SEPARATE	5	5	1	SMALL OUTLINE, THIN PROFILE	TSOP24/26,.36	DRAMs	1.27 mm	70 Cel	YES	3-STATE	16MX1	16M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G24			Not Qualified	16777216 bit	e0	.001 Amp		60 ns
MC-458CA721PSA-A80	Renesas Electronics	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD	1150 mA	8388608 words			COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel		3-STATE	8MX72	8M		DUAL	R-PDMA-N144		125 MHz	Not Qualified	603979776 bit		.005 Amp		6 ns
UPD42S16405LA-50	Renesas Electronics	EDO DRAM	COMMERCIAL	24	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	100 mA	4194304 words		YES	COMMON	5	5	4	SMALL OUTLINE	SOJ24/26,.34	DRAMs	1.27 mm	70 Cel		3-STATE	4MX4	4M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J24			Not Qualified	16777216 bit	e0	.00025 Amp		50 ns
MC-4516CD64S-A80	Renesas Electronics	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD	1180 mA	16777216 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel		3-STATE	16MX64	16M		DUAL	R-PDMA-N144		125 MHz	Not Qualified	1073741824 bit		.004 Amp		6 ns
MC-4516DC72F-A10B	Renesas Electronics	SYNCHRONOUS DRAM MODULE	COMMERCIAL	200	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD	1560 mA	16777216 words			COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM200	DRAMs	1.27 mm	70 Cel		3-STATE	16MX72	16M		DUAL	R-PDMA-N200		100 MHz	Not Qualified	1207959552 bit		.019 Amp		7.5 ns
UPD42S16180LE-70	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	42	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	100 mA	1048576 words		YES	COMMON	5	5	18	SMALL OUTLINE	SOJ42,.44	DRAMs	1.27 mm	70 Cel		3-STATE	1MX18	1M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J42			Not Qualified	18874368 bit	e0	.0004 Amp		70 ns
UPD42S16180LLE-A60	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	42	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	100 mA	1048576 words		YES	COMMON	3.3	3.3	18	SMALL OUTLINE	SOJ42,.44	DRAMs	1.27 mm	70 Cel		3-STATE	1MX18	1M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J42			Not Qualified	18874368 bit	e0	.0001 Amp		60 ns
UPD4216101LE-80	Renesas Electronics	NIBBLE MODE DRAM	COMMERCIAL	24	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND		16777216 words			SEPARATE	5	5	1	SMALL OUTLINE	SOJ24/28,.44	DRAMs	1.27 mm	70 Cel		3-STATE	16MX1	16M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J24			Not Qualified	16777216 bit	e0			80 ns
UPD42S16800V-60	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	28	ZIP	4096	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	THROUGH-HOLE	90 mA	2097152 words		YES	COMMON	5	5	8	IN-LINE	ZIP28,.1	DRAMs	1.27 mm	70 Cel		3-STATE	2MX8	2M	Tin/Lead (Sn/Pb)	ZIG-ZAG	R-PZIP-T28			Not Qualified	16777216 bit	e0	.0004 Amp		60 ns
UPD42S16160G5M-80	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	44	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	80 mA	1048576 words		YES	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44/50,.46,32	DRAMs	.8 mm	70 Cel	YES	3-STATE	1MX16	1M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G44			Not Qualified	16777216 bit	e0	.00025 Amp		80 ns
UPD4565422G5-A80B-9JF	Renesas Electronics	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	105 mA	16777216 words	1,2,4,8,16		COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	70 Cel		3-STATE	16MX4	16M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G54		125 MHz	Not Qualified	67108864 bit	e0	.001 Amp	1,2,4,8,16	5 ns
UPD4265400LG-A70	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	34	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND		16777216 words		NO	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ34,.54	DRAMs	1.27 mm	70 Cel		3-STATE	16MX4	16M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J34			Not Qualified	67108864 bit	e0			70 ns
UPD4265165G5-A70	Renesas Electronics	EDO DRAM	COMMERCIAL	50	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	110 mA	4194304 words		NO	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP50,.46,32	DRAMs	.8 mm	70 Cel		3-STATE	4MX16	4M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G50			Not Qualified	67108864 bit	e0	.0005 Amp		70 ns
MC-45V8AD641ES-A15	Renesas Electronics	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD	540 mA	8388608 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel		3-STATE	8MX64	8M		DUAL	R-PDMA-N144		66 MHz	Not Qualified	536870912 bit		.004 Amp		12 ns
UPD4564323G5-A10-9JH	Renesas Electronics	SYNCHRONOUS DRAM	COMMERCIAL	86	TSSOP	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	200 mA	2097152 words	1,2,4,8,FP		COMMON	3.3	3.3	32	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP86,.46,20	DRAMs	.5 mm	70 Cel		3-STATE	2MX32	2M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G86		100 MHz	Not Qualified	67108864 bit	e0	.0005 Amp	1,2,4,8	6 ns
UPD42116182-15-9JF	Renesas Electronics	SYNCHRONOUS DRAM	COMMERCIAL	50	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	80 mA	1048576 words	1,2,4,8,FP		COMMON	3.3	3.3	18	SMALL OUTLINE, THIN PROFILE	TSOP50,.46,32	DRAMs	.8 mm	70 Cel		3-STATE	1MX18	1M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G50		66 MHz	Not Qualified	18874368 bit	e0	.002 Amp	4,8	13 ns
MC-45V16AD641F-A70	Renesas Electronics	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD	1360 mA	16777216 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel		3-STATE	16MX64	16M		DUAL	R-PDMA-N168		142 MHz	Not Qualified	1073741824 bit		.008 Amp		5.5 ns
UPD4265805G5-A60	Renesas Electronics	EDO DRAM	COMMERCIAL	32	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	115 mA	8388608 words		NO	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	DRAMs	1.27 mm	70 Cel		3-STATE	8MX8	8M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G32			Not Qualified	67108864 bit	e0	.0005 Amp		60 ns
MC-4516CD641PS-A10	Renesas Electronics	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD	1040 mA	16777216 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel		3-STATE	16MX64	16M		DUAL	R-PDMA-N144		100 MHz	Not Qualified	1073741824 bit		.008 Amp		6 ns
UPD4216405LLA-A60	Renesas Electronics	EDO DRAM	COMMERCIAL	24	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	90 mA	4194304 words		NO	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ24/26,.34	DRAMs	1.27 mm	70 Cel		3-STATE	4MX4	4M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J24			Not Qualified	16777216 bit	e0	.0005 Amp		60 ns
MC-4532DA726EF-A80	Renesas Electronics	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD	4260 mA	33554432 words			COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel		3-STATE	32MX72	32M		DUAL	R-PDMA-N168		125 MHz	Not Qualified	2415919104 bit		.029 Amp		6 ns
UPD4216400LA-60	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	24	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	90 mA	4194304 words		NO	COMMON	5	5	4	SMALL OUTLINE	SOJ24/26,.34	DRAMs	1.27 mm	70 Cel		3-STATE	4MX4	4M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J24			Not Qualified	16777216 bit	e0	.001 Amp		60 ns
MC-45V8AD641KS-A75	Renesas Electronics	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD	640 mA	8388608 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel		3-STATE	8MX64	8M		DUAL	R-PDMA-N144		133 MHz	Not Qualified	536870912 bit		.004 Amp		5.4 ns
UPD42S16160LE-50	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	42	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	110 mA	1048576 words		YES	COMMON	5	5	16	SMALL OUTLINE	SOJ42,.44	DRAMs	1.27 mm	70 Cel		3-STATE	1MX16	1M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J42			Not Qualified	16777216 bit	e0	.00025 Amp		50 ns
UPD4216405LG3-A50-7JD	Renesas Electronics	EDO DRAM	COMMERCIAL	24	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	100 mA	4194304 words		NO	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP24/26,.36	DRAMs	1.27 mm	70 Cel		3-STATE	4MX4	4M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G24			Not Qualified	16777216 bit	e0	.0005 Amp		50 ns
MC-4532CD646EF-A10	Renesas Electronics	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD	2200 mA	33554432 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel		3-STATE	32MX64	32M		DUAL	R-PDMA-N168		100 MHz	Not Qualified	2147483648 bit		.008 Amp		6 ns
UPD42S16170LE-60	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	42	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	100 mA	1048576 words		YES	COMMON	5	5	16	SMALL OUTLINE	SOJ42,.44	DRAMs	1.27 mm	70 Cel		3-STATE	1MX16	1M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J42			Not Qualified	16777216 bit	e0	.0004 Amp		60 ns
UPD4216805LLE-A60	Renesas Electronics	EDO DRAM	COMMERCIAL	28	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	90 mA	2097152 words		NO	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ28,.44	DRAMs	1.27 mm	70 Cel		3-STATE	2MX8	2M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J28			Not Qualified	16777216 bit	e0	.0005 Amp		60 ns
UPD42S16100LE-70	Renesas Electronics	FAST PAGE DRAM	COMMERCIAL	24	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	80 mA	16777216 words		YES	SEPARATE	5	5	1	SMALL OUTLINE	SOJ24/28,.44	DRAMs	1.27 mm	70 Cel		3-STATE	16MX1	16M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J24			Not Qualified	16777216 bit	e0	.0002 Amp		70 ns
MC-45V8AB64S-A15	Renesas Electronics	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD	880 mA	8388608 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel		3-STATE	8MX64	8M		DUAL	R-PDMA-N144		66 MHz	Not Qualified	536870912 bit		.004 Amp		12 ns
UPD4216412G5M-80	Renesas Electronics	STATIC COLUMN DRAM	COMMERCIAL	24	TSSOP	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING		4194304 words			COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP24/28,.46,20	SRAMs	.5 mm	70 Cel	YES	3-STATE	4MX4	4M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G24			Not Qualified	16777216 bit	e0			80 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.