4096 DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
TM4SN64EPU-12	Texas Instruments	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	MOS		NO LEAD	SYNCHRONOUS	1256 mA	4194304 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel	3-STATE	4MX64	4M		0 Cel		DUAL	1	R-XDMA-N168	3.6 V	28.702 mm	83 MHz		Not Qualified	268435456 bit	3 V					.032 Amp			9 ns
TMS426400P-80DGA	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	24	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS	50 mA	4194304 words		YES	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP24/26,.36	DRAMs	1.27 mm	70 Cel	3-STATE	4MX4	4M		0 Cel		DUAL	1	R-PDSO-G24	3.6 V	1.2 mm		7.62 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/BATTERY BACKUP/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.0001 Amp		17.14 mm	80 ns
SMJ416400-70HKBM	Texas Instruments	FAST PAGE DRAM	MILITARY	28	DFP	4096	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE WITH EDO	YES	1	CMOS	38535Q/M;38534H;883B	FLAT	SYNCHRONOUS	80 mA	4194304 words		NO	COMMON	5	5	4	FLATPACK	FL28,.5	DRAMs	1.27 mm	125 Cel	3-STATE	4MX4	4M		-55 Cel		DUAL	1	R-CDFP-F28	5.5 V	3.32 mm		11.43 mm	Not Qualified	16777216 bit	4.5 V	CAS BEFORE RAS REFRESH		NOT SPECIFIED	NOT SPECIFIED	.001 Amp		19.655 mm	70 ns
TM8EN64KPU-40	Texas Instruments	EDO DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	MOS		NO LEAD	ASYNCHRONOUS	644 mA	8388608 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel	3-STATE	8MX64	8M		0 Cel		DUAL	1	R-XDMA-N168	3.6 V	28.702 mm			Not Qualified	536870912 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				.002 Amp			40 ns
TMS416160-80RE	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	42	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS		1048576 words				5		16	SMALL OUTLINE			1.27 mm	70 Cel		1MX16	1M		0 Cel		DUAL	1	R-PDSO-J42	5.5 V	3.76 mm		10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH						27.38 mm	80 ns
TMS426100-10DJ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	24	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS		16777216 words				3.3		1	SMALL OUTLINE			1.27 mm	70 Cel		16MX1	16M		0 Cel		DUAL	1	R-PDSO-J24	3.6 V	3.76 mm		7.57 mm	Not Qualified	16777216 bit	3 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH						17.145 mm	100 ns
SMJ416400-10SV	Texas Instruments	FAST PAGE DRAM	MILITARY	24	ZIP	4096	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS		4194304 words				5		4	IN-LINE			2.54 mm	125 Cel	3-STATE	4MX4	4M		-55 Cel		ZIG-ZAG	1	R-CZIP-T24	5.5 V	13.08 mm		2.92 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						31.75 mm	100 ns
SMJ416400-10SVM	Texas Instruments	FAST PAGE DRAM	MILITARY	24	DIP	4096	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	SYNCHRONOUS	60 mA	4194304 words		NO	COMMON	5	5	4	IN-LINE	ZIP24,.1	DRAMs	1.27 mm	125 Cel	3-STATE	4MX4	4M		-55 Cel		DUAL	1	R-CDIP-T24	5.5 V	13.08 mm		2.92 mm	Not Qualified	16777216 bit	4.5 V	CAS BEFORE RAS REFRESH		NOT SPECIFIED	NOT SPECIFIED	.001 Amp		31.75 mm	100 ns
TMS426160-70DGE	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	44	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS	80 mA	1048576 words		NO	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44/50,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	1MX16	1M		0 Cel		DUAL	1	R-PDSO-G44	3.6 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.0005 Amp		20.95 mm	70 ns
TM16100EBD9-80	Texas Instruments	FAST PAGE DRAM MODULE	COMMERCIAL	30	SIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS		NO LEAD	ASYNCHRONOUS	630 mA	16777216 words			COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel	3-STATE	16MX9	16M		0 Cel		SINGLE	1	R-XSMA-N30	5.5 V				Not Qualified	150994944 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.009 Amp			80 ns
SMJ626162-15HKDM	Texas Instruments	SYNCHRONOUS DRAM	MILITARY	50	DFP	4096	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	DUAL BANK PAGE BURST	YES	1	CMOS		FLAT	SYNCHRONOUS		1048576 words				3.3		16	FLATPACK			.8 mm	125 Cel	3-STATE	1MX16	1M		-55 Cel		DUAL	1	R-CDFP-F50	3.465 V	3.55 mm		16.5 mm	Not Qualified	16777216 bit	3.135 V	AUTO REFRESH						21 mm	9 ns
TM4EP64CJN-70	Texas Instruments	EDO DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	NO	1	MOS		NO LEAD	SYNCHRONOUS	1280 mA	4194304 words		NO	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel	3-STATE	4MX72	4M		0 Cel	GOLD	DUAL	1	R-PDMA-N168	3.6 V	25.53 mm			Not Qualified	301989888 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH	e4			.016 Amp		133.35 mm	70 ns
SMJ416400-10HKB	Texas Instruments	FAST PAGE DRAM	MILITARY	28	DFP	4096	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS		FLAT	ASYNCHRONOUS		4194304 words				5		4	FLATPACK			1.27 mm	125 Cel	3-STATE	4MX4	4M		-55 Cel		DUAL	1	R-CDFP-F28	5.5 V	3.32 mm		11.43 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						19.655 mm	100 ns
TM2SN64EPH-10	Texas Instruments	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS	720 mA	2097152 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel	3-STATE	2MX64	2M		0 Cel		DUAL	1	R-XDMA-N168	3.6 V		100 MHz		Not Qualified	134217728 bit	3 V					.008 Amp			7 ns
TMS416160P-60DZ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	42	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS	90 mA	1048576 words		YES	COMMON	5	5	16	SMALL OUTLINE	SOJ42,.44	DRAMs	1.27 mm	70 Cel	3-STATE	1MX16	1M		0 Cel		DUAL	1	R-PDSO-J42	5.5 V	3.76 mm		10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.0005 Amp		27.305 mm	60 ns
TM4EP64CJN-50	Texas Instruments	EDO DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	NO	1	MOS		NO LEAD	SYNCHRONOUS	1600 mA	4194304 words		NO	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel	3-STATE	4MX72	4M		0 Cel	GOLD	DUAL	1	R-PDMA-N168	3.6 V	25.53 mm			Not Qualified	301989888 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH	e4			.016 Amp		133.35 mm	50 ns
TM496TBM40S-60	Texas Instruments	FAST PAGE DRAM MODULE	COMMERCIAL	72		4096	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS		NO LEAD	ASYNCHRONOUS		4194304 words				5		40	MICROELECTRONIC ASSEMBLY				70 Cel		4MX40	4M		0 Cel		SINGLE	1	R-XSMA-N72	5.5 V				Not Qualified	167772160 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH							60 ns
TMS664164DGE-8	Texas Instruments	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	MOS		GULL WING	SYNCHRONOUS	245 mA	4194304 words	1,2,4,8	YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX16	4M		0 Cel		DUAL	1	R-PDSO-G54	3.6 V	1.2 mm	125 MHz	10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.001 Amp	1,2,4,8	22.22 mm	6 ns
TM4SN64EPN-10	Texas Instruments	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	NO	1	MOS		NO LEAD	SYNCHRONOUS	1048 mA	4194304 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel	3-STATE	4MX64	4M		0 Cel	GOLD	DUAL	1	R-PDMA-N168	3.6 V	28.7 mm	100 MHz		Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH	e4			.032 Amp		133.35 mm	7.5 ns
TMS426100P-80DGA	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	24	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS		16777216 words		YES		3.3		1	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel		16MX1	16M		0 Cel		DUAL	1	R-PDSO-G24	3.6 V	1.2 mm		7.62 mm	Not Qualified	16777216 bit	3 V	RAS ONLY; CAS BEFORE RAS; HIDDEN; SELF REFRESH						17.14 mm	80 ns
TM892VBM40-60	Texas Instruments	FAST PAGE DRAM MODULE	COMMERCIAL	72		4096	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS		NO LEAD	ASYNCHRONOUS		8388608 words				5		40	MICROELECTRONIC ASSEMBLY				70 Cel		8MX40	8M		0 Cel		SINGLE	1	R-XSMA-N72	5.5 V				Not Qualified	335544320 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH							60 ns
TM4SR72EPU-12A	Texas Instruments	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	MOS		NO LEAD	SYNCHRONOUS	1413 mA	4194304 words			COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	Other Memory ICs	1.27 mm	70 Cel	3-STATE	4MX72	4M	3 V	0 Cel		DUAL	1	R-XDMA-N168	3.6 V		83 MHz		Not Qualified	301989888 bit	3 V					.036 Amp			9 ns
TM4EN64KPU-60	Texas Instruments	EDO DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	MOS		NO LEAD	ASYNCHRONOUS	440 mA	4194304 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel	3-STATE	4MX64	4M		0 Cel		DUAL	1	R-XDMA-N168	3.6 V				Not Qualified	268435456 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				.002 Amp			60 ns
TMS626812B-8ADGE	Texas Instruments	SYNCHRONOUS DRAM	COMMERCIAL	44	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	MOS		GULL WING	SYNCHRONOUS	150 mA	2097152 words	1,2,4,8	YES	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	2MX8	2M		0 Cel		DUAL	1	R-PDSO-G44	3.6 V	1.2 mm	125 MHz	10.16 mm	Not Qualified	16777216 bit	3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.001 Amp	1,2,4,8	18.41 mm	7 ns
TMS416400-60DGC	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	24	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS		4194304 words				5		4	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel		4MX4	4M		0 Cel		DUAL	1	R-PDSO-G24	5.5 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH						18.41 mm	60 ns
TM4FJ64KPU-60	Texas Instruments	EDO DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS		NO LEAD	ASYNCHRONOUS	440 mA	4194304 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX64	4M		0 Cel		DUAL	1	R-XDMA-N144	3.6 V				Not Qualified	268435456 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				.0006 Amp			60 ns
TMS416400-80DGD	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	24	TSOP2-R	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS		4194304 words				5		4	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel		4MX4	4M		0 Cel		DUAL	1	R-PDSO-G24	5.5 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH						18.41 mm	80 ns
TMS416400A-60DJ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	24	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	MOS		J BEND	ASYNCHRONOUS	80 mA	4194304 words		NO	COMMON	5	5	4	SMALL OUTLINE	SOJ24/26,.34	DRAMs	1.27 mm	70 Cel	3-STATE	4MX4	4M		0 Cel		DUAL	1	R-PDSO-J24	5.5 V	3.76 mm		7.62 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.001 Amp		17.145 mm	60 ns
TMS426800AP-70DGC	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	28	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		GULL WING		60 mA	2097152 words		YES	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP28,.46	DRAMs	1.27 mm	70 Cel	3-STATE	2MX8	2M		0 Cel		DUAL		R-PDSO-G28					Not Qualified	16777216 bit				NOT SPECIFIED	NOT SPECIFIED	.00015 Amp			70 ns
TMS416800-80DE	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	32	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS		2097152 words				5		8	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel		2MX8	2M		0 Cel		DUAL	1	R-PDSO-G32	5.5 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH						20.95 mm	80 ns
SDRAM-10DGE	Texas Instruments	SYNCHRONOUS DRAM	COMMERCIAL	44	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	2 BANK PAGE RANDOM AND BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS		2097152 words		YES		3.3		8	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel		2MX8	2M		0 Cel		DUAL	1	R-PDSO-G44	3.6 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	3 V	AUTO/SELF REFRESH						18.41 mm	60 ns
TMS416800A-60DGC	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	28	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		GULL WING		80 mA	2097152 words		NO	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP28,.46	DRAMs	1.27 mm	70 Cel	3-STATE	2MX8	2M		0 Cel		DUAL		R-PDSO-G28					Not Qualified	16777216 bit				NOT SPECIFIED	NOT SPECIFIED	.001 Amp			60 ns
TM16EN64HPU-40	Texas Instruments	EDO DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS		NO LEAD	ASYNCHRONOUS	2560 mA	16777216 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel	3-STATE	16MX64	16M		0 Cel		DUAL	1	R-XDMA-N168	3.6 V				Not Qualified	1073741824 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				.008 Amp			20 ns
TMS416400A-60DGA	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	24	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS	80 mA	4194304 words		NO	COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE	TSOP24/26,.36	DRAMs	1.27 mm	70 Cel	3-STATE	4MX4	4M		0 Cel		DUAL	1	R-PDSO-G24	5.5 V	1.2 mm		7.62 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.001 Amp		17.14 mm	60 ns
TMS416169P-80DGE	Texas Instruments	EDO DRAM	COMMERCIAL	44	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS		GULL WING	ASYNCHRONOUS	70 mA	1048576 words		YES	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44/50,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	1MX16	1M		0 Cel		DUAL	1	R-PDSO-G44	5.5 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.0005 Amp		20.95 mm	80 ns
TMS426160-80DZ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	42	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS	70 mA	1048576 words		NO	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ42,.44	DRAMs	1.27 mm	70 Cel	3-STATE	1MX16	1M		0 Cel		DUAL	1	R-PDSO-J42	3.6 V	3.76 mm		10.16 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.0005 Amp		27.305 mm	80 ns
TMS426160P-60DGE	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	44	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS	90 mA	1048576 words		YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44/50,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	1MX16	1M		0 Cel		DUAL	1	R-PDSO-G44	3.6 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.0002 Amp		20.95 mm	60 ns
TM2SR72EPU-12	Texas Instruments	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	MOS		NO LEAD	SYNCHRONOUS	1395 mA	2097152 words			COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	Other Memory ICs	1.27 mm	70 Cel	3-STATE	2MX72	2M	3 V	0 Cel		DUAL	1	R-XDMA-N168	3.6 V		83.3 MHz		Not Qualified	150994944 bit	3 V					.018 Amp			9 ns
TMS426100P-60DJ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	24	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS		16777216 words		YES		3.3		1	SMALL OUTLINE			1.27 mm	70 Cel		16MX1	16M		0 Cel		DUAL	1	R-PDSO-J24	3.6 V	3.76 mm		7.57 mm	Not Qualified	16777216 bit	3 V	RAS ONLY; CAS BEFORE RAS; HIDDEN; SELF REFRESH						17.145 mm	60 ns
TMS426160A-60DGC	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	44	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		GULL WING		90 mA	1048576 words		NO	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44/50,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	1MX16	1M		0 Cel		DUAL		R-PDSO-G44					Not Qualified	16777216 bit				NOT SPECIFIED	NOT SPECIFIED	.001 Amp			60 ns
TMS426400AP-50DJ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	24	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS	90 mA	4194304 words		YES	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ24/26,.34	DRAMs	1.27 mm	70 Cel	3-STATE	4MX4	4M		0 Cel		DUAL	1	R-PDSO-J24	3.6 V	3.76 mm		7.62 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/BATTERY BACKUP/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.00015 Amp		17.145 mm	50 ns
TMS416169A-50DGE	Texas Instruments	EDO DRAM	COMMERCIAL	44	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS		GULL WING	ASYNCHRONOUS	130 mA	1048576 words		NO	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44/50,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	1MX16	1M		0 Cel		DUAL	1	R-PDSO-G44	5.5 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.001 Amp		20.95 mm	50 ns
TMS626412-12BDGE	Texas Instruments	SYNCHRONOUS DRAM	COMMERCIAL	44	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		GULL WING		110 mA	4194304 words	1,2,4,8		COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	4MX4	4M		0 Cel		DUAL		R-PDSO-G44			83 MHz		Not Qualified	16777216 bit				NOT SPECIFIED	NOT SPECIFIED	.002 Amp	1,2,4,8		8 ns
TMS416800P-60DZ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	28	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS		2097152 words		YES		5		8	SMALL OUTLINE			1.27 mm	70 Cel		2MX8	2M		0 Cel		DUAL	1	R-PDSO-J28	5.5 V	3.76 mm		10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN; SELF REFRESH						18.415 mm	60 ns
TMS426160P-60DZ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	42	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS	90 mA	1048576 words		YES	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ42,.44	DRAMs	1.27 mm	70 Cel	3-STATE	1MX16	1M		0 Cel		DUAL	1	R-PDSO-J42	3.6 V	3.76 mm		10.16 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.0002 Amp		27.305 mm	60 ns
TMS626402-10DGE	Texas Instruments	SYNCHRONOUS DRAM	COMMERCIAL	44	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS		4194304 words		YES		3.3		4	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel	3-STATE	4MX4	4M		0 Cel		DUAL	1	R-PDSO-G44	3.6 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	3 V	CAS BEFORE RAS/SELF REFRESH						18.41 mm
TMS626802-12DGE	Texas Instruments	SYNCHRONOUS DRAM	COMMERCIAL	44	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS		2097152 words		YES		3.3		8	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel	3-STATE	2MX8	2M		0 Cel		DUAL	1	R-PDSO-G44	3.6 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	3 V	CAS BEFORE RAS/SELF REFRESH						18.41 mm
TMS416169-60DGE	Texas Instruments	EDO DRAM	COMMERCIAL	44	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS		GULL WING	ASYNCHRONOUS	90 mA	1048576 words		NO	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44/50,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	1MX16	1M		0 Cel		DUAL	1	R-PDSO-G44	5.5 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.001 Amp		20.95 mm	60 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.