8192 DRAM 2,400+

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Refresh Cycles Package Shape Package Body Material Access Mode Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Sequential Burst Length Self Refresh Input/Output Type Nominal Supply Voltage / Vsup (V) Mixed Memory Type Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Standby Voltage Minimum Operating Temperature Terminal Finish Terminal Position No. of Ports JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Maximum Clock Frequency (fCLK) Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Standby Current Interleaved Burst Length Length Maximum Access Time

HYS64V32300GU-7-D

Infineon Technologies

SYNCHRONOUS DRAM MODULE

COMMERCIAL

168

DIMM

8192

RECTANGULAR

UNSPECIFIED

SINGLE BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

1920 mA

33554432 words

YES

COMMON

3.3

3.3

64

MICROELECTRONIC ASSEMBLY

DIMM168

DRAMs

1.27 mm

70 Cel

3-STATE

32MX64

32M

0 Cel

DUAL

1

R-XDMA-N168

3.6 V

133 MHz

Not Qualified

2147483648 bit

3 V

AUTO/SELF REFRESH

.016 Amp

5.4 ns

HYS64T32000LM-3.7-A

Infineon Technologies

DDR DRAM MODULE

COMMERCIAL

214

DIMM

8192

RECTANGULAR

UNSPECIFIED

SINGLE BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

880 mA

33554432 words

YES

COMMON

1.8

1.8

64

MICROELECTRONIC ASSEMBLY

DIMM214,16

DRAMs

.4 mm

65 Cel

3-STATE

32MX64

32M

0 Cel

DUAL

1

R-XDMA-N214

1.9 V

266 MHz

Not Qualified

2147483648 bit

1.7 V

AUTO/SELF REFRESH

.016 Amp

.5 ns

HYS64V16302GU-7.5-C2

Infineon Technologies

SYNCHRONOUS DRAM MODULE

COMMERCIAL

168

DIMM

8192

RECTANGULAR

UNSPECIFIED

SINGLE BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

920 mA

16777216 words

YES

COMMON

3.3

3.3

64

MICROELECTRONIC ASSEMBLY

DIMM168

DRAMs

1.27 mm

70 Cel

3-STATE

16MX64

16M

0 Cel

DUAL

1

R-XDMA-N168

3.6 V

133 MHz

Not Qualified

1073741824 bit

3 V

AUTO/SELF REFRESH

.008 Amp

5.4 ns

HYS64D16020GDL-7-A

Infineon Technologies

DDR DRAM MODULE

COMMERCIAL

200

DIMM

8192

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

1300 mA

16777216 words

YES

COMMON

2.5

2.5

64

MICROELECTRONIC ASSEMBLY

DIMM200,24

DRAMs

.6 mm

70 Cel

3-STATE

16MX64

16M

0 Cel

DUAL

1

R-XDMA-N200

2.7 V

143 MHz

Not Qualified

1073741824 bit

2.3 V

AUTO/SELF REFRESH

.04 Amp

.75 ns

HYS64V64220GU-8-A

Infineon Technologies

SYNCHRONOUS DRAM MODULE

COMMERCIAL

168

DIMM

8192

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

210 mA

67108864 words

YES

COMMON

3.3

3.3

64

MICROELECTRONIC ASSEMBLY

DIMM168

DRAMs

1.27 mm

70 Cel

3-STATE

64MX64

64M

0 Cel

DUAL

1

R-XDMA-N168

3.6 V

100 MHz

Not Qualified

4294967296 bit

3 V

AUTO/SELF REFRESH

.002 Amp

6 ns

HYS64D64300HU-6-B

Infineon Technologies

DDR DRAM MODULE

COMMERCIAL

184

DIMM

8192

RECTANGULAR

UNSPECIFIED

SINGLE BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

2600 mA

67108864 words

YES

COMMON

2.5

2.5

64

MICROELECTRONIC ASSEMBLY

DIMM184

DRAMs

1.27 mm

70 Cel

3-STATE

64MX64

64M

0 Cel

MATTE TIN

DUAL

1

R-XDMA-N184

2.7 V

133 MHz

Not Qualified

4294967296 bit

2.3 V

AUTO/SELF REFRESH

e3

.03 Amp

.7 ns

HYB39S512800AT-7

Infineon Technologies

SYNCHRONOUS DRAM

COMMERCIAL

54

TSOP2

8192

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

GULL WING

SYNCHRONOUS

300 mA

67108864 words

1,2,4,8,FP

YES

COMMON

3.3

3.3

8

SMALL OUTLINE, THIN PROFILE

TSOP54,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

64MX8

64M

0 Cel

TIN LEAD

DUAL

1

R-PDSO-G54

3.6 V

1.2 mm

143 MHz

10.16 mm

Not Qualified

536870912 bit

3 V

AUTO/SELF REFRESH

e0

.003 Amp

1,2,4,8

22.22 mm

5.4 ns

HYS64V64220GBDL-7-D

Infineon Technologies

SYNCHRONOUS DRAM MODULE

COMMERCIAL

144

DIMM

8192

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

1920 mA

67108864 words

YES

COMMON

3.3

3.3

64

MICROELECTRONIC ASSEMBLY

DIMM144,32

DRAMs

.8 mm

70 Cel

3-STATE

64MX64

64M

0 Cel

DUAL

1

R-XDMA-N144

3.6 V

143 MHz

Not Qualified

4294967296 bit

3 V

AUTO/SELF REFRESH

.016 Amp

5.4 ns

HYS72D256020GR-8-A

Infineon Technologies

DDR DRAM MODULE

COMMERCIAL

184

DIMM

8192

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

7200 mA

268435456 words

YES

COMMON

2.5

2.5

72

MICROELECTRONIC ASSEMBLY

DIMM184

DRAMs

1.27 mm

70 Cel

3-STATE

256MX72

256M

0 Cel

DUAL

1

R-XDMA-N184

2.7 V

125 MHz

Not Qualified

19327352832 bit

2.3 V

AUTO/SELF REFRESH

.432 Amp

.8 ns

HYS64V32200GU-8A

Infineon Technologies

SYNCHRONOUS DRAM MODULE

COMMERCIAL

168

DIMM

8192

RECTANGULAR

UNSPECIFIED

SINGLE BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

240 mA

33554432 words

COMMON

3.3

3.3

64

MICROELECTRONIC ASSEMBLY

DIMM168

DRAMs

1.27 mm

70 Cel

3-STATE

32MX64

32M

0 Cel

DUAL

1

R-XDMA-N168

3.6 V

100 MHz

Not Qualified

2147483648 bit

3 V

.002 Amp

6 ns

HYS72D128321GBR-5-B

Infineon Technologies

DDR DRAM MODULE

COMMERCIAL

184

DIMM

8192

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

6820 mA

134217728 words

YES

COMMON

2.6

2.6

72

MICROELECTRONIC ASSEMBLY

DIMM184

DRAMs

1.27 mm

70 Cel

3-STATE

128MX72

128M

0 Cel

DUAL

1

R-XDMA-N184

2.7 V

200 MHz

Not Qualified

9663676416 bit

2.5 V

AUTO/SELF REFRESH

NOT SPECIFIED

NOT SPECIFIED

.8 Amp

.5 ns

HYE18M512160AF-7.5

Infineon Technologies

DDR1 DRAM

OTHER

60

FBGA

8192

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

90 mA

33554432 words

2,4,8,16

COMMON

1.8

1.8

16

GRID ARRAY, FINE PITCH

BGA60,9X10,32

DRAMs

.8 mm

85 Cel

3-STATE

32MX16

32M

-25 Cel

BOTTOM

R-PBGA-B60

133 MHz

Not Qualified

536870912 bit

.0005 Amp

2,4,8,16

6.5 ns

HYB39S256160DTL-7

Infineon Technologies

SYNCHRONOUS DRAM

COMMERCIAL

54

TSOP2

8192

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

GULL WING

SYNCHRONOUS

190 mA

16777216 words

1,2,4,8,FP

YES

COMMON

3.3

3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP54,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

16MX16

16M

0 Cel

TIN LEAD

DUAL

1

R-PDSO-G54

3.6 V

1.2 mm

143 MHz

10.16 mm

Not Qualified

268435456 bit

3 V

AUTO/SELF REFRESH

e0

.002 Amp

1,2,4,8

22.22 mm

5.4 ns

HYS64D128021GBDL-6-B

Infineon Technologies

DDR DRAM MODULE

COMMERCIAL

200

DIMM

8192

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

2560 mA

134217728 words

YES

COMMON

2.5

2.5

64

MICROELECTRONIC ASSEMBLY

DIMM200,24

DRAMs

.6 mm

70 Cel

3-STATE

128MX64

128M

0 Cel

DUAL

1

R-PDMA-N200

2.7 V

166 MHz

Not Qualified

8589934592 bit

2.3 V

AUTO/SELF REFRESH

NOT SPECIFIED

NOT SPECIFIED

.06 Amp

.7 ns

HYS72D32300GU-5-C

Infineon Technologies

DDR DRAM MODULE

COMMERCIAL

184

DIMM

8192

RECTANGULAR

UNSPECIFIED

SINGLE BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

2250 mA

33554432 words

YES

COMMON

2.6

2.6

72

MICROELECTRONIC ASSEMBLY

DIMM184

DRAMs

1.27 mm

70 Cel

3-STATE

32MX72

32M

0 Cel

MATTE TIN

DUAL

1

R-XDMA-N184

2.7 V

200 MHz

Not Qualified

2415919104 bit

2.5 V

AUTO/SELF REFRESH

e3

.6 ns

HYS72V32200GR-8B

Infineon Technologies

SYNCHRONOUS DRAM MODULE

COMMERCIAL

168

DIMM

8192

RECTANGULAR

UNSPECIFIED

SINGLE BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

195 mA

33554432 words

COMMON

3.3

3.3

72

MICROELECTRONIC ASSEMBLY

DIMM168

DRAMs

1.27 mm

70 Cel

3-STATE

32MX72

32M

0 Cel

DUAL

1

R-XDMA-N168

3.6 V

100 MHz

Not Qualified

2415919104 bit

3 V

.002 Amp

6 ns

HYM64V8045GU-70

Infineon Technologies

EDO DRAM MODULE

COMMERCIAL

168

DIMM

8192

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

800 mA

8388608 words

COMMON

3.3

3.3

64

MICROELECTRONIC ASSEMBLY

DIMM168

32

DRAMs

1.27 mm

70 Cel

3-STATE

8MX64

8M

0 Cel

DUAL

1

R-XDMA-N168

3.6 V

Not Qualified

536870912 bit

3 V

RAS ONLY/CAS BEFORE RAS REFRESH

.004 Amp

70 ns

HYS64D128320GU-5-B

Infineon Technologies

DDR DRAM MODULE

COMMERCIAL

184

DIMM

8192

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

3300 mA

134217728 words

YES

COMMON

2.6

2.6

64

MICROELECTRONIC ASSEMBLY

DIMM184

DRAMs

1.27 mm

70 Cel

3-STATE

128MX64

128M

0 Cel

MATTE TIN

DUAL

1

R-XDMA-N184

2.7 V

200 MHz

Not Qualified

8589934592 bit

2.5 V

AUTO/SELF REFRESH

e3

.07 Amp

.5 ns

HYM64V8045GU-50

Infineon Technologies

EDO DRAM MODULE

COMMERCIAL

168

DIMM

8192

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

1120 mA

8388608 words

COMMON

3.3

3.3

64

MICROELECTRONIC ASSEMBLY

DIMM168

DRAMs

1.27 mm

70 Cel

3-STATE

8MX64

8M

0 Cel

DUAL

1

R-XDMA-N168

3.6 V

Not Qualified

536870912 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEELF REFRESH

.004 Amp

50 ns

HYS72V64220GU-8-C2

Infineon Technologies

SYNCHRONOUS DRAM MODULE

COMMERCIAL

168

DIMM

8192

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

3960 mA

67108864 words

YES

COMMON

3.3

3.3

72

MICROELECTRONIC ASSEMBLY

DIMM168

DRAMs

1.27 mm

70 Cel

3-STATE

64MX72

64M

0 Cel

DUAL

1

R-XDMA-N168

3.6 V

100 MHz

Not Qualified

4831838208 bit

3 V

AUTO/SELF REFRESH

.036 Amp

6 ns

HYB39S256160AT-7.5

Infineon Technologies

SYNCHRONOUS DRAM

COMMERCIAL

54

TSOP2

8192

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

GULL WING

SYNCHRONOUS

270 mA

16777216 words

1,2,4,8

YES

COMMON

3.3

3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP54,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

16MX16

16M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

1

R-PDSO-G54

3.6 V

1.2 mm

133 MHz

10.16 mm

Not Qualified

268435456 bit

3 V

AUTO/SELF REFRESH

e0

.002 Amp

1,2,4,8

22.22 mm

5.4 ns

HYB39S256160DTL-7.5

Infineon Technologies

SYNCHRONOUS DRAM

COMMERCIAL

54

TSOP2

8192

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

GULL WING

SYNCHRONOUS

190 mA

16777216 words

1,2,4,8,FP

YES

COMMON

3.3

3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP54,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

16MX16

16M

0 Cel

TIN LEAD

DUAL

1

R-PDSO-G54

3.6 V

1.2 mm

133 MHz

10.16 mm

Not Qualified

268435456 bit

3 V

AUTO/SELF REFRESH

e0

.002 Amp

1,2,4,8

22.22 mm

5.4 ns

HYS72V64200GR-8A

Infineon Technologies

SYNCHRONOUS DRAM MODULE

COMMERCIAL

168

DIMM

8192

RECTANGULAR

UNSPECIFIED

SINGLE BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

240 mA

67108864 words

YES

COMMON

3.3

3.3

72

MICROELECTRONIC ASSEMBLY

DIMM168

DRAMs

1.27 mm

70 Cel

3-STATE

64MX72

64M

0 Cel

DUAL

1

R-XDMA-N168

3.6 V

100 MHz

Not Qualified

4831838208 bit

3 V

AUTO/SELF REFRESH

.002 Amp

6 ns

HYS72D128020GR-7-A

Infineon Technologies

DDR DRAM MODULE

COMMERCIAL

184

DIMM

8192

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

5580 mA

134217728 words

YES

COMMON

2.5

2.5

72

MICROELECTRONIC ASSEMBLY

DIMM184

DRAMs

1.27 mm

70 Cel

3-STATE

128MX72

128M

0 Cel

DUAL

1

R-XDMA-N184

2.7 V

143 MHz

Not Qualified

9663676416 bit

2.3 V

AUTO/SELF REFRESH

.72 Amp

.75 ns

HYS72D128500HR-7-B

Infineon Technologies

DDR DRAM MODULE

COMMERCIAL

184

DIMM

8192

RECTANGULAR

UNSPECIFIED

SINGLE BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

5898 mA

134217728 words

YES

COMMON

2.5

2.5

72

MICROELECTRONIC ASSEMBLY

DIMM184

Other Memory ICs

1.27 mm

70 Cel

3-STATE

128MX72

128M

0 Cel

DUAL

1

R-XDMA-N184

2.7 V

133 MHz

Not Qualified

9663676416 bit

2.3 V

AUTO/SELF REFRESH

.448 Amp

.75 ns

HYS72D64320GBR-6-B

Infineon Technologies

DDR DRAM MODULE

COMMERCIAL

184

DIMM

8192

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

3745 mA

67108864 words

YES

COMMON

2.5

2.5

72

MICROELECTRONIC ASSEMBLY

DIMM184

DRAMs

1.27 mm

70 Cel

3-STATE

64MX72

64M

0 Cel

DUAL

1

R-XDMA-N184

2.7 V

166 MHz

Not Qualified

4831838208 bit

2.3 V

AUTO/SELF REFRESH

NOT SPECIFIED

NOT SPECIFIED

.7 ns

HYS72V64500GR-7.5

Infineon Technologies

SYNCHRONOUS DRAM MODULE

COMMERCIAL

168

DIMM

8192

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

4320 mA

67108864 words

COMMON

3.3

3.3

72

MICROELECTRONIC ASSEMBLY

DIMM168

DRAMs

1.27 mm

70 Cel

3-STATE

64MX72

64M

0 Cel

DUAL

R-PDMA-N168

133 MHz

Not Qualified

4831838208 bit

.036 Amp

5.4 ns

HYS72V128220GR-8A

Infineon Technologies

SYNCHRONOUS DRAM MODULE

COMMERCIAL

168

DIMM

8192

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

240 mA

134217728 words

YES

COMMON

3.3

3.3

72

MICROELECTRONIC ASSEMBLY

DIMM168

DRAMs

1.27 mm

70 Cel

3-STATE

128MX72

128M

0 Cel

DUAL

1

R-XDMA-N168

3.6 V

100 MHz

Not Qualified

9663676416 bit

3 V

AUTO/SELF REFRESH

.002 Amp

6 ns

HYS72D128520GR-7-A

Infineon Technologies

DDR DRAM MODULE

COMMERCIAL

184

DIMM

8192

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

134217728 words

YES

COMMON

2.5

2.5

72

MICROELECTRONIC ASSEMBLY

DIMM184

DRAMs

1.27 mm

70 Cel

3-STATE

128MX72

128M

0 Cel

DUAL

1

R-XDMA-N184

2.7 V

143 MHz

Not Qualified

9663676416 bit

2.3 V

AUTO/SELF REFRESH

NOT SPECIFIED

NOT SPECIFIED

.75 ns

HYS72D32300HU-6-C

Infineon Technologies

DDR DRAM MODULE

COMMERCIAL

184

DIMM

8192

RECTANGULAR

UNSPECIFIED

SINGLE BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

1935 mA

33554432 words

YES

COMMON

2.5

2.6

72

MICROELECTRONIC ASSEMBLY

DIMM184

DRAMs

1.27 mm

70 Cel

3-STATE

32MX72

32M

0 Cel

DUAL

1

R-XDMA-N184

2.7 V

167 MHz

Not Qualified

2415919104 bit

2.3 V

AUTO/SELF REFRESH

NOT SPECIFIED

NOT SPECIFIED

.7 ns

HYS72D64500GR-8-B

Infineon Technologies

DDR DRAM MODULE

COMMERCIAL

184

DIMM

8192

RECTANGULAR

UNSPECIFIED

SINGLE BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

3780 mA

67108864 words

YES

COMMON

2.5

2.5

72

MICROELECTRONIC ASSEMBLY

DIMM184

Other Memory ICs

1.27 mm

70 Cel

3-STATE

64MX72

64M

0 Cel

DUAL

1

R-XDMA-N184

2.7 V

125 MHz

Not Qualified

4831838208 bit

2.3 V

AUTO/SELF REFRESH

NOT SPECIFIED

NOT SPECIFIED

.126 Amp

.8 ns

HYS72D128300HBR-7-B

Infineon Technologies

DDR DRAM MODULE

COMMERCIAL

184

DIMM

8192

RECTANGULAR

UNSPECIFIED

SINGLE BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

5140 mA

134217728 words

YES

COMMON

2.5

2.5

72

MICROELECTRONIC ASSEMBLY

DIMM184

Other Memory ICs

1.27 mm

70 Cel

3-STATE

128MX72

128M

0 Cel

DUAL

1

R-XDMA-N184

2.7 V

133 MHz

Not Qualified

9663676416 bit

2.3 V

AUTO/SELF REFRESH

.57 Amp

.75 ns

HYS72V128321GR-7.5-C2

Infineon Technologies

SYNCHRONOUS DRAM MODULE

COMMERCIAL

168

DIMM

8192

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

9720 mA

134217728 words

YES

COMMON

3.3

3.3

72

MICROELECTRONIC ASSEMBLY

DIMM168

DRAMs

1.27 mm

70 Cel

3-STATE

128MX72

128M

0 Cel

DUAL

1

R-XDMA-N168

3.6 V

133 MHz

Not Qualified

9663676416 bit

3 V

AUTO/SELF REFRESH

.072 Amp

5.4 ns

HYB39S256800DCL-7

Infineon Technologies

SYNCHRONOUS DRAM

COMMERCIAL

54

TFBGA

8192

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

190 mA

33554432 words

1,2,4,8,FP

YES

COMMON

3.3

3.3

8

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA54,9X9,32

DRAMs

.8 mm

70 Cel

3-STATE

32MX8

32M

0 Cel

TIN LEAD

BOTTOM

1

R-PBGA-B54

3.6 V

1.2 mm

143 MHz

8 mm

Not Qualified

268435456 bit

3 V

AUTO/SELF REFRESH

e0

.002 Amp

1,2,4,8

12 mm

5.4 ns

HYS72V64300GR-7.5-D

Infineon Technologies

SYNCHRONOUS DRAM MODULE

COMMERCIAL

168

DIMM

8192

RECTANGULAR

UNSPECIFIED

SINGLE BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

4860 mA

67108864 words

YES

COMMON

3.3

3.3

72

MICROELECTRONIC ASSEMBLY

DIMM168

DRAMs

1.27 mm

70 Cel

3-STATE

64MX72

64M

0 Cel

DUAL

1

R-XDMA-N168

3.6 V

133 MHz

Not Qualified

4831838208 bit

3 V

AUTO/SELF REFRESH

.036 Amp

5.4 ns

HYB18M512160AF-6

Infineon Technologies

DDR1 DRAM

COMMERCIAL

60

FBGA

8192

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

110 mA

33554432 words

2,4,8,16

COMMON

1.8

1.8

16

GRID ARRAY, FINE PITCH

BGA60,9X10,32

DRAMs

.8 mm

70 Cel

3-STATE

32MX16

32M

0 Cel

BOTTOM

R-PBGA-B60

166 MHz

Not Qualified

536870912 bit

.0005 Amp

2,4,8,16

5.4 ns

HYB18T256800AFL-3S

Infineon Technologies

DDR2 DRAM

60

FBGA

8192

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

145 mA

33554432 words

4,8

YES

COMMON

1.8

1.8

8

GRID ARRAY, FINE PITCH

BGA60,9X11,32

DRAMs

.8 mm

3-STATE

32MX8

32M

BOTTOM

1

R-PBGA-B60

1.9 V

333 MHz

10 mm

Not Qualified

268435456 bit

1.7 V

AUTO/SELF REFRESH

NOT SPECIFIED

NOT SPECIFIED

.004 Amp

4,8

10.5 mm

.45 ns

HYS72D128321HBR-5-B

Infineon Technologies

DDR DRAM MODULE

COMMERCIAL

184

DIMM

8192

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

6820 mA

134217728 words

YES

COMMON

2.6

2.6

72

MICROELECTRONIC ASSEMBLY

DIMM184

DRAMs

1.27 mm

70 Cel

3-STATE

128MX72

128M

0 Cel

MATTE TIN

DUAL

1

R-XDMA-N184

2.7 V

200 MHz

Not Qualified

9663676416 bit

2.5 V

AUTO/SELF REFRESH

e3

.8 Amp

.5 ns

HYB3164405BTL-50

Infineon Technologies

EDO DRAM

COMMERCIAL

32

TSOP2

8192

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE WITH EDO

YES

1

CMOS

GULL WING

ASYNCHRONOUS

70 mA

16777216 words

YES

COMMON

3.3

3.3

4

SMALL OUTLINE, THIN PROFILE

TSOP32,.46

DRAMs

1.27 mm

70 Cel

3-STATE

16MX4

16M

0 Cel

TIN LEAD

DUAL

1

R-PDSO-G32

3.6 V

1.2 mm

10.16 mm

Not Qualified

67108864 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH

e0

.0002 Amp

20.95 mm

50 ns

HYS64D128021EBDL-5-B

Infineon Technologies

DDR DRAM MODULE

COMMERCIAL

200

DIMM

8192

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

2860 mA

134217728 words

YES

COMMON

2.6

2.6

64

MICROELECTRONIC ASSEMBLY

DIMM200,24

DRAMs

.6 mm

70 Cel

3-STATE

128MX64

128M

0 Cel

MATTE TIN

DUAL

1

R-PDMA-N200

2.7 V

200 MHz

Not Qualified

8589934592 bit

2.5 V

AUTO/SELF REFRESH

e3

.06 Amp

.5 ns

HYS64D128020GU-7-A

Infineon Technologies

DDR DRAM MODULE

COMMERCIAL

184

DIMM

8192

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

3600 mA

134217728 words

YES

COMMON

2.5

2.5

64

MICROELECTRONIC ASSEMBLY

DIMM184

DRAMs

1.27 mm

70 Cel

3-STATE

128MX64

128M

0 Cel

DUAL

1

R-XDMA-N184

2.7 V

143 MHz

Not Qualified

8589934592 bit

2.3 V

AUTO/SELF REFRESH

.224 Amp

.75 ns

HYS72T128020GU-5-A

Infineon Technologies

DDR DRAM MODULE

COMMERCIAL

240

DIMM

8192

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

1206 mA

134217728 words

YES

COMMON

1.8

1.8

72

MICROELECTRONIC ASSEMBLY

DIMM240,40

DRAMs

1 mm

55 Cel

3-STATE

128MX72

128M

0 Cel

DUAL

1

R-XDMA-N240

1.9 V

200 MHz

Not Qualified

9663676416 bit

1.7 V

AUTO/SELF REFRESH

NOT SPECIFIED

NOT SPECIFIED

.6 ns

HYB18T256800AFL-5

Infineon Technologies

DDR2 DRAM

60

FBGA

8192

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

125 mA

33554432 words

4,8

YES

COMMON

1.8

1.8

8

GRID ARRAY, FINE PITCH

BGA60,9X11,32

DRAMs

.8 mm

3-STATE

32MX8

32M

BOTTOM

1

R-PBGA-B60

1.9 V

200 MHz

10 mm

Not Qualified

268435456 bit

1.7 V

AUTO/SELF REFRESH

NOT SPECIFIED

NOT SPECIFIED

.004 Amp

4,8

10.5 mm

.6 ns

HYS72D128520GR-7-B

Infineon Technologies

DDR DRAM MODULE

COMMERCIAL

184

DIMM

8192

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

5040 mA

134217728 words

YES

COMMON

2.5

2.5

72

MICROELECTRONIC ASSEMBLY

DIMM184

DRAMs

1.27 mm

70 Cel

3-STATE

128MX72

128M

0 Cel

DUAL

1

R-XDMA-N184

2.7 V

143 MHz

Not Qualified

9663676416 bit

2.3 V

AUTO/SELF REFRESH

NOT SPECIFIED

NOT SPECIFIED

.75 ns

HYB3164165BT-60

Infineon Technologies

EDO DRAM

COMMERCIAL

50

TSOP2

8192

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE WITH EDO

YES

1

CMOS

GULL WING

ASYNCHRONOUS

60 mA

4194304 words

NO

COMMON

3.3

3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP50,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

4MX16

4M

0 Cel

TIN LEAD

DUAL

1

R-PDSO-G50

3.6 V

1.2 mm

10.16 mm

Not Qualified

67108864 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

e0

.001 Amp

20.95 mm

60 ns

HYS72D32500GR-7F-B

Infineon Technologies

DDR DRAM MODULE

COMMERCIAL

184

DIMM

8192

RECTANGULAR

UNSPECIFIED

SINGLE BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

2025 mA

33554432 words

YES

COMMON

2.5

2.5

72

MICROELECTRONIC ASSEMBLY

DIMM184

DRAMs

1.27 mm

70 Cel

3-STATE

32MX72

32M

0 Cel

DUAL

1

R-XDMA-N184

2.7 V

143 MHz

Not Qualified

2415919104 bit

2.3 V

AUTO/SELF REFRESH

NOT SPECIFIED

NOT SPECIFIED

.072 Amp

.75 ns

HYS64D16001GU-8-B

Infineon Technologies

DDR DRAM MODULE

COMMERCIAL

184

DIMM

8192

RECTANGULAR

UNSPECIFIED

SINGLE BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

16777216 words

YES

COMMON

2.5

2.5

64

MICROELECTRONIC ASSEMBLY

DIMM184

DRAMs

1.27 mm

70 Cel

3-STATE

16MX64

16M

0 Cel

DUAL

1

R-XDMA-N184

2.7 V

125 MHz

Not Qualified

1073741824 bit

2.3 V

AUTO/SELF REFRESH

NOT SPECIFIED

NOT SPECIFIED

.8 ns

HYS72D256220GBR-7-B

Infineon Technologies

DDR DRAM MODULE

COMMERCIAL

184

DIMM

8192

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

6170 mA

268435456 words

YES

COMMON

2.5

2.5

72

MICROELECTRONIC ASSEMBLY

DIMM184

DRAMs

1.27 mm

70 Cel

3-STATE

256MX72

256M

0 Cel

DUAL

1

R-XDMA-N184

2.7 V

133 MHz

Not Qualified

19327352832 bit

2.3 V

AUTO/SELF REFRESH

1.05 Amp

.75 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.