8192 DRAM 2,400+

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Refresh Cycles Package Shape Package Body Material Access Mode Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Sequential Burst Length Self Refresh Input/Output Type Nominal Supply Voltage / Vsup (V) Mixed Memory Type Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Standby Voltage Minimum Operating Temperature Terminal Finish Terminal Position No. of Ports JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Maximum Clock Frequency (fCLK) Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Standby Current Interleaved Burst Length Length Maximum Access Time

HYS72D32300GBR-6-C

Infineon Technologies

DDR DRAM MODULE

COMMERCIAL

184

DIMM

8192

RECTANGULAR

UNSPECIFIED

SINGLE BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

2580 mA

33554432 words

YES

COMMON

2.5

2.5

72

MICROELECTRONIC ASSEMBLY

DIMM184

DRAMs

1.27 mm

70 Cel

3-STATE

32MX72

32M

0 Cel

DUAL

1

R-XDMA-N184

2.7 V

166 MHz

Not Qualified

2415919104 bit

2.3 V

AUTO/SELF REFRESH

NOT SPECIFIED

NOT SPECIFIED

.41 Amp

.7 ns

HYB39S256400DCL-7.5

Infineon Technologies

SYNCHRONOUS DRAM

COMMERCIAL

54

TFBGA

8192

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

190 mA

67108864 words

1,2,4,8,FP

YES

COMMON

3.3

3.3

4

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA54,9X9,32

DRAMs

.8 mm

70 Cel

3-STATE

64MX4

64M

0 Cel

TIN LEAD

BOTTOM

1

R-PBGA-B54

3.6 V

1.2 mm

133 MHz

8 mm

Not Qualified

268435456 bit

3 V

AUTO/SELF REFRESH

e0

.002 Amp

1,2,4,8

12 mm

5.4 ns

HYS64T64020HDL-5-A

Infineon Technologies

DDR DRAM MODULE

COMMERCIAL

200

DIMM

8192

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

860 mA

67108864 words

YES

COMMON

1.8

1.8

64

MICROELECTRONIC ASSEMBLY

DIMM200,24

DRAMs

.6 mm

55 Cel

3-STATE

64MX64

64M

0 Cel

MATTE TIN

DUAL

1

R-XDMA-N200

1.9 V

200 MHz

Not Qualified

4294967296 bit

1.7 V

AUTO/SELF REFRESH

e3

.03 Amp

.6 ns

HYB39S256800DCL-6

Infineon Technologies

SYNCHRONOUS DRAM

COMMERCIAL

54

TFBGA

8192

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

220 mA

33554432 words

1,2,4,8,FP

YES

COMMON

3.3

3.3

8

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA54,9X9,32

DRAMs

.8 mm

70 Cel

3-STATE

32MX8

32M

0 Cel

TIN LEAD

BOTTOM

1

R-PBGA-B54

3.6 V

1.2 mm

166 MHz

8 mm

Not Qualified

268435456 bit

3 V

AUTO/SELF REFRESH

e0

.002 Amp

1,2,4,8

12 mm

5 ns

HYB18T256400AFL-3.7

Infineon Technologies

DDR2 DRAM

60

TFBGA

8192

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

135 mA

67108864 words

4,8

YES

COMMON

1.8

1.8

4

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA60,9X11,32

DRAMs

.8 mm

3-STATE

64MX4

64M

BOTTOM

1

R-PBGA-B60

1.9 V

1.2 mm

266 MHz

10 mm

Not Qualified

268435456 bit

1.7 V

AUTO/SELF REFRESH

NOT SPECIFIED

NOT SPECIFIED

.004 Amp

4,8

10.5 mm

.5 ns

HYM72V1600GS-50

Infineon Technologies

FAST PAGE DRAM MODULE

COMMERCIAL

168

DIMM

8192

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

2000 mA

16777216 words

COMMON

3.3

3.3

72

MICROELECTRONIC ASSEMBLY

DIMM168

Other Memory ICs

1.27 mm

70 Cel

3-STATE

16MX72

16M

0 Cel

DUAL

1

R-XDMA-N168

3.6 V

38.1 mm

Not Qualified

1207959552 bit

3 V

RAS ONLY/CAS BEFORE RAS REFRESH

.05 Amp

50 ns

HYM72V1610GS-50

Infineon Technologies

FAST PAGE DRAM MODULE

COMMERCIAL

168

DIMM

8192

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

2000 mA

16777216 words

COMMON

3.3

3.3

72

MICROELECTRONIC ASSEMBLY

DIMM168

Other Memory ICs

1.27 mm

70 Cel

3-STATE

16MX72

16M

0 Cel

DUAL

1

R-XDMA-N168

3.6 V

38.1 mm

Not Qualified

1207959552 bit

3 V

RAS ONLY/CAS BEFORE RAS REFRESH

.05 Amp

50 ns

HYS64T32000HU-3.7-A

Infineon Technologies

DDR DRAM MODULE

COMMERCIAL

240

DIMM

8192

RECTANGULAR

UNSPECIFIED

SINGLE BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

880 mA

33554432 words

YES

COMMON

1.8

1.8

64

MICROELECTRONIC ASSEMBLY

DIMM240,40

DRAMs

1 mm

65 Cel

3-STATE

32MX64

32M

0 Cel

MATTE TIN

DUAL

1

R-XDMA-N240

1.9 V

267 MHz

Not Qualified

2147483648 bit

1.7 V

AUTO/SELF REFRESH

e3

.5 ns

HYB3164800J-50

Infineon Technologies

FAST PAGE DRAM

COMMERCIAL

34

SOJ

8192

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

110 mA

8388608 words

YES

COMMON

3.3

3.3

8

SMALL OUTLINE

SOJ34,.54

DRAMs

1.27 mm

70 Cel

3-STATE

8MX8

8M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J34

Not Qualified

67108864 bit

e0

.0002 Amp

50 ns

HYS72V32300GU-7.5-D

Infineon Technologies

SYNCHRONOUS DRAM MODULE

COMMERCIAL

168

DIMM

8192

RECTANGULAR

UNSPECIFIED

SINGLE BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

2160 mA

33554432 words

YES

COMMON

3.3

3.3

72

MICROELECTRONIC ASSEMBLY

DIMM168

DRAMs

1.27 mm

70 Cel

3-STATE

32MX72

32M

0 Cel

DUAL

1

R-XDMA-N168

3.6 V

133 MHz

Not Qualified

2415919104 bit

3 V

AUTO/SELF REFRESH

.018 Amp

5.4 ns

HYB39S256800AT-7.5

Infineon Technologies

SYNCHRONOUS DRAM

COMMERCIAL

54

TSOP2

8192

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

GULL WING

SYNCHRONOUS

270 mA

33554432 words

1,2,4,8

YES

COMMON

3.3

3.3

8

SMALL OUTLINE, THIN PROFILE

TSOP54,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

32MX8

32M

0 Cel

TIN LEAD

DUAL

1

R-PDSO-G54

3.6 V

1.2 mm

133 MHz

10.16 mm

Not Qualified

268435456 bit

3 V

AUTO/SELF REFRESH

e0

.002 Amp

1,2,4,8

22.22 mm

5.4 ns

HYS72D32000GR-7-B

Infineon Technologies

DDR DRAM MODULE

COMMERCIAL

184

DIMM

8192

RECTANGULAR

UNSPECIFIED

SINGLE BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

2025 mA

33554432 words

YES

COMMON

2.5

2.5

72

MICROELECTRONIC ASSEMBLY

DIMM184

DRAMs

1.27 mm

70 Cel

3-STATE

32MX72

32M

0 Cel

DUAL

1

R-XDMA-N184

2.7 V

143 MHz

Not Qualified

2415919104 bit

2.3 V

AUTO/SELF REFRESH

.072 Amp

.75 ns

HYB39S512160ATL-7

Infineon Technologies

SYNCHRONOUS DRAM

COMMERCIAL

54

TSOP2

8192

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

GULL WING

SYNCHRONOUS

300 mA

33554432 words

1,2,4,8,FP

YES

COMMON

3.3

3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP54,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

32MX16

32M

0 Cel

TIN LEAD

DUAL

1

R-PDSO-G54

3.6 V

1.2 mm

143 MHz

10.16 mm

Not Qualified

536870912 bit

3 V

AUTO/SELF REFRESH

e0

.003 Amp

1,2,4,8

22.22 mm

5.4 ns

HYB3164165AT-50

Infineon Technologies

EDO DRAM

COMMERCIAL

50

TSOP2

8192

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE WITH EDO

YES

1

CMOS

GULL WING

ASYNCHRONOUS

140 mA

4194304 words

NO

COMMON

3.3

3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP50,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

4MX16

4M

0 Cel

TIN LEAD

DUAL

1

R-PDSO-G50

3.6 V

1.2 mm

10.16 mm

Not Qualified

67108864 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

e0

.0009 Amp

20.95 mm

50 ns

HYB39S256400CT-7.5

Infineon Technologies

SYNCHRONOUS DRAM

COMMERCIAL

54

TSOP2

8192

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

GULL WING

SYNCHRONOUS

240 mA

67108864 words

1,2,4,8,FP

YES

COMMON

3.3

3.3

4

SMALL OUTLINE, THIN PROFILE

TSOP54,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

64MX4

64M

0 Cel

TIN LEAD

DUAL

1

R-PDSO-G54

3.6 V

1.2 mm

133 MHz

10.16 mm

Not Qualified

268435456 bit

3 V

AUTO/SELF REFRESH

e0

.002 Amp

1,2,4,8

22.22 mm

5.4 ns

HYB39S256400T-7.5

Infineon Technologies

SYNCHRONOUS DRAM

COMMERCIAL

54

TSOP2

8192

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

GULL WING

SYNCHRONOUS

270 mA

67108864 words

1,2,4,8

YES

COMMON

3.3

3.3

4

SMALL OUTLINE, THIN PROFILE

TSOP54,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

64MX4

64M

0 Cel

TIN LEAD

DUAL

1

R-PDSO-G54

3.6 V

1.2 mm

133 MHz

10.16 mm

Not Qualified

268435456 bit

3 V

AUTO/SELF REFRESH

e0

.002 Amp

1,2,4,8

22.22 mm

5.4 ns

HYS72D128020GU-7-A

Infineon Technologies

DDR DRAM MODULE

COMMERCIAL

184

DIMM

8192

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

4050 mA

134217728 words

YES

COMMON

2.5

2.5

72

MICROELECTRONIC ASSEMBLY

DIMM184

DRAMs

1.27 mm

70 Cel

3-STATE

128MX72

128M

0 Cel

DUAL

1

R-XDMA-N184

2.7 V

143 MHz

Not Qualified

9663676416 bit

2.3 V

AUTO/SELF REFRESH

.75 ns

HYS64D64320GU-6-C

Infineon Technologies

DDR DRAM MODULE

COMMERCIAL

184

DIMM

8192

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

2024 mA

67108864 words

YES

COMMON

2.5

2.6

64

MICROELECTRONIC ASSEMBLY

DIMM184

DRAMs

1.27 mm

70 Cel

3-STATE

64MX64

64M

0 Cel

MATTE TIN

DUAL

1

R-XDMA-N184

2.7 V

167 MHz

Not Qualified

4294967296 bit

2.3 V

AUTO/SELF REFRESH

e3

.7 ns

HYS72T256220HR-5-A

Infineon Technologies

DDR DRAM MODULE

COMMERCIAL

240

DIMM

8192

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

2820 mA

268435456 words

YES

COMMON

1.8

1.8

72

MICROELECTRONIC ASSEMBLY

DIMM240,40

DRAMs

1 mm

55 Cel

3-STATE

256MX72

256M

0 Cel

DUAL

1

R-XDMA-N240

1.9 V

200 MHz

Not Qualified

19327352832 bit

1.7 V

AUTO/SELF REFRESH

.62 Amp

.6 ns

HYS72V128320GR-7.5-D

Infineon Technologies

SYNCHRONOUS DRAM MODULE

COMMERCIAL

168

DIMM

8192

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

9720 mA

134217728 words

YES

COMMON

3.3

3.3

72

MICROELECTRONIC ASSEMBLY

DIMM168

DRAMs

1.27 mm

70 Cel

3-STATE

128MX72

128M

0 Cel

DUAL

1

R-XDMA-N168

3.6 V

133 MHz

Not Qualified

9663676416 bit

3 V

AUTO/SELF REFRESH

.072 Amp

5.4 ns

HYS64D16001GDL-7-B

Infineon Technologies

DDR DRAM MODULE

COMMERCIAL

200

DIMM

8192

RECTANGULAR

UNSPECIFIED

SINGLE BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

940 mA

16777216 words

YES

COMMON

2.5

2.5

64

MICROELECTRONIC ASSEMBLY

DIMM200,24

DRAMs

.6 mm

70 Cel

3-STATE

16MX64

16M

0 Cel

DUAL

1

R-XDMA-N200

2.7 V

143 MHz

Not Qualified

1073741824 bit

2.3 V

AUTO/SELF REFRESH

.75 ns

HYS72V64220GU-8-A

Infineon Technologies

SYNCHRONOUS DRAM MODULE

COMMERCIAL

168

DIMM

8192

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

210 mA

67108864 words

YES

COMMON

3.3

3.3

72

MICROELECTRONIC ASSEMBLY

DIMM168

DRAMs

1.27 mm

70 Cel

3-STATE

64MX72

64M

0 Cel

DUAL

1

R-XDMA-N168

3.6 V

100 MHz

Not Qualified

4831838208 bit

3 V

AUTO/SELF REFRESH

.002 Amp

6 ns

HYS72D64020GR-8-B

Infineon Technologies

DDR DRAM MODULE

COMMERCIAL

184

DIMM

8192

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

2295 mA

67108864 words

YES

COMMON

2.5

2.5

72

MICROELECTRONIC ASSEMBLY

DIMM184

DRAMs

1.27 mm

70 Cel

3-STATE

64MX72

64M

0 Cel

DUAL

1

R-XDMA-N184

2.7 V

125 MHz

Not Qualified

4831838208 bit

2.3 V

AUTO/SELF REFRESH

.8 ns

HYS72V32300GU-8-A

Infineon Technologies

SYNCHRONOUS DRAM MODULE

COMMERCIAL

168

DIMM

8192

RECTANGULAR

UNSPECIFIED

SINGLE BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

210 mA

33554432 words

YES

COMMON

3.3

3.3

72

MICROELECTRONIC ASSEMBLY

DIMM168

DRAMs

1.27 mm

70 Cel

3-STATE

32MX72

32M

0 Cel

DUAL

1

R-XDMA-N168

3.6 V

100 MHz

Not Qualified

2415919104 bit

3 V

AUTO/SELF REFRESH

.002 Amp

6 ns

HYS72V64601GR-7.5

Infineon Technologies

SYNCHRONOUS DRAM MODULE

COMMERCIAL

168

DIMM

8192

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

3960 mA

67108864 words

COMMON

3.3

3.3

72

MICROELECTRONIC ASSEMBLY

DIMM168

DRAMs

1.27 mm

70 Cel

3-STATE

64MX72

64M

0 Cel

DUAL

R-PDMA-N168

133 MHz

Not Qualified

4831838208 bit

.036 Amp

5.4 ns

HYS64T32000HDL-5-A

Infineon Technologies

DDR DRAM MODULE

COMMERCIAL

200

DIMM

8192

RECTANGULAR

UNSPECIFIED

SINGLE BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

840 mA

33554432 words

YES

COMMON

1.8

1.8

64

MICROELECTRONIC ASSEMBLY

DIMM200,24

DRAMs

.6 mm

55 Cel

3-STATE

32MX64

32M

0 Cel

MATTE TIN

DUAL

1

R-XDMA-N200

1.9 V

200 MHz

Not Qualified

2147483648 bit

1.7 V

AUTO/SELF REFRESH

e3

.6 ns

HYS64V16302GU-8-C2

Infineon Technologies

SYNCHRONOUS DRAM MODULE

COMMERCIAL

168

DIMM

8192

RECTANGULAR

UNSPECIFIED

SINGLE BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

680 mA

16777216 words

YES

COMMON

3.3

3.3

64

MICROELECTRONIC ASSEMBLY

DIMM168

DRAMs

1.27 mm

70 Cel

3-STATE

16MX64

16M

0 Cel

DUAL

1

R-XDMA-N168

3.6 V

100 MHz

Not Qualified

1073741824 bit

3 V

AUTO/SELF REFRESH

.008 Amp

6 ns

HYE18M512160BF-7.5

Infineon Technologies

DDR1 DRAM

OTHER

60

FBGA

8192

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

75 mA

33554432 words

2,4,8,16

COMMON

1.8

1.8

16

GRID ARRAY, FINE PITCH

BGA60,9X10,32

DRAMs

.8 mm

85 Cel

3-STATE

32MX16

32M

-25 Cel

BOTTOM

R-PBGA-B60

133 MHz

Not Qualified

536870912 bit

.0007 Amp

2,4,8,16

6.5 ns

HYS64D32000GU-7-A

Infineon Technologies

DDR DRAM MODULE

COMMERCIAL

184

DIMM

8192

RECTANGULAR

UNSPECIFIED

SINGLE BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

1576 mA

33554432 words

YES

COMMON

2.5

2.5

64

MICROELECTRONIC ASSEMBLY

DIMM184

DRAMs

1.27 mm

70 Cel

3-STATE

32MX64

32M

0 Cel

DUAL

1

R-XDMA-N184

2.7 V

143 MHz

Not Qualified

2147483648 bit

2.3 V

AUTO/SELF REFRESH

NOT SPECIFIED

NOT SPECIFIED

.75 ns

HYS64D16301GU-5-C

Infineon Technologies

DDR DRAM MODULE

COMMERCIAL

184

DIMM

8192

RECTANGULAR

UNSPECIFIED

SINGLE BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

1000 mA

16777216 words

YES

COMMON

2.6

2.6

64

MICROELECTRONIC ASSEMBLY

DIMM184

DRAMs

1.27 mm

70 Cel

3-STATE

16MX64

16M

0 Cel

DUAL

1

R-XDMA-N184

2.7 V

200 MHz

Not Qualified

1073741824 bit

2.5 V

AUTO/SELF REFRESH

.6 ns

HYE18L256160BC-7.5

Infineon Technologies

SYNCHRONOUS DRAM

OTHER

54

FBGA

8192

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

90 mA

16777216 words

1,2,4,8,FP

YES

COMMON

1.8

1.8

16

GRID ARRAY, FINE PITCH

BGA54,9X9,32

DRAMs

.8 mm

85 Cel

3-STATE

16MX16

16M

-25 Cel

TIN LEAD

BOTTOM

1

R-PBGA-B54

1.95 V

133 MHz

8 mm

Not Qualified

268435456 bit

1.65 V

AUTO/SELF REFRESH

e0

.00035 Amp

1,2,4,8

12 mm

5.4 ns

HYS72V32600GR-7.5

Infineon Technologies

SYNCHRONOUS DRAM MODULE

COMMERCIAL

168

DIMM

8192

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

2160 mA

33554432 words

COMMON

3.3

3.3

72

MICROELECTRONIC ASSEMBLY

DIMM168

DRAMs

1.27 mm

70 Cel

3-STATE

32MX72

32M

0 Cel

DUAL

R-PDMA-N168

133 MHz

Not Qualified

2415919104 bit

.018 Amp

5.4 ns

HYB3164400AT-60

Infineon Technologies

FAST PAGE DRAM

COMMERCIAL

32

TSOP2

8192

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

GULL WING

ASYNCHRONOUS

105 mA

16777216 words

NO

COMMON

3.3

3.3

4

SMALL OUTLINE, THIN PROFILE

TSOP32,.46

DRAMs

1.27 mm

70 Cel

3-STATE

16MX4

16M

0 Cel

TIN LEAD

DUAL

1

R-PDSO-G32

3.6 V

1.2 mm

10.16 mm

Not Qualified

67108864 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

e0

.0009 Amp

20.95 mm

60 ns

HYS72V32300GU-7-D

Infineon Technologies

SYNCHRONOUS DRAM MODULE

COMMERCIAL

168

DIMM

8192

RECTANGULAR

UNSPECIFIED

SINGLE BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

2160 mA

33554432 words

YES

COMMON

3.3

3.3

72

MICROELECTRONIC ASSEMBLY

DIMM168

DRAMs

1.27 mm

70 Cel

3-STATE

32MX72

32M

0 Cel

DUAL

1

R-XDMA-N168

3.6 V

133 MHz

Not Qualified

2415919104 bit

3 V

AUTO/SELF REFRESH

.018 Amp

5.4 ns

HYE25L256160AC-8

Infineon Technologies

SYNCHRONOUS DRAM

OTHER

54

TFBGA

8192

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

140 mA

16777216 words

1,2,4,8,FP

YES

COMMON

2.5

1.8,2.5

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA54,9X9,32

DRAMs

.8 mm

85 Cel

3-STATE

16MX16

16M

-25 Cel

TIN LEAD

BOTTOM

1

R-PBGA-B54

3.6 V

1.2 mm

125 MHz

8 mm

Not Qualified

268435456 bit

2.3 V

AUTO/SELF REFRESH

e0

.0006 Amp

1,2,4,8

12 mm

7.5 ns

HYB3164400T-50

Infineon Technologies

FAST PAGE DRAM

COMMERCIAL

34

TSOP

8192

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

110 mA

16777216 words

YES

COMMON

3.3

3.3

4

SMALL OUTLINE, THIN PROFILE

TSOP34,.56

DRAMs

1.27 mm

70 Cel

3-STATE

16MX4

16M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G34

Not Qualified

67108864 bit

e0

.0002 Amp

50 ns

HYS72T128020GR-5-A

Infineon Technologies

DDR DRAM MODULE

COMMERCIAL

240

DIMM

8192

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

1574 mA

134217728 words

YES

COMMON

1.8

1.8

72

MICROELECTRONIC ASSEMBLY

DIMM240,40

DRAMs

1 mm

55 Cel

3-STATE

128MX72

128M

0 Cel

DUAL

1

R-XDMA-N240

1.9 V

200 MHz

Not Qualified

9663676416 bit

1.7 V

AUTO/SELF REFRESH

NOT SPECIFIED

NOT SPECIFIED

.44 Amp

.6 ns

HYB39S256400DC-7

Infineon Technologies

SYNCHRONOUS DRAM

COMMERCIAL

54

TFBGA

8192

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

190 mA

67108864 words

1,2,4,8,FP

YES

COMMON

3.3

3.3

4

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA54,9X9,32

DRAMs

.8 mm

70 Cel

3-STATE

64MX4

64M

0 Cel

TIN LEAD

BOTTOM

1

R-PBGA-B54

3.6 V

1.2 mm

143 MHz

8 mm

Not Qualified

268435456 bit

3 V

AUTO/SELF REFRESH

e0

.002 Amp

1,2,4,8

12 mm

5.4 ns

HYS72D32300GBR-7-C

Infineon Technologies

DDR DRAM MODULE

COMMERCIAL

184

DIMM

8192

RECTANGULAR

UNSPECIFIED

SINGLE BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

2100 mA

33554432 words

YES

COMMON

2.5

2.5

72

MICROELECTRONIC ASSEMBLY

DIMM184

DRAMs

1.27 mm

70 Cel

3-STATE

32MX72

32M

0 Cel

DUAL

1

R-XDMA-N184

1

2.7 V

133 MHz

Not Qualified

2415919104 bit

2.3 V

AUTO/SELF REFRESH

.37 Amp

.75 ns

HYS64D64300HU-5-C

Infineon Technologies

DDR DRAM MODULE

COMMERCIAL

184

DIMM

8192

RECTANGULAR

UNSPECIFIED

SINGLE BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

1840 mA

67108864 words

YES

COMMON

2.6

2.6

64

MICROELECTRONIC ASSEMBLY

DIMM184

DRAMs

1.27 mm

70 Cel

3-STATE

64MX64

64M

0 Cel

DUAL

1

R-XDMA-N184

2.7 V

200 MHz

Not Qualified

4294967296 bit

2.5 V

AUTO/SELF REFRESH

.016 Amp

.5 ns

HYB3164400AJ-40

Infineon Technologies

FAST PAGE DRAM

COMMERCIAL

32

SOJ

8192

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

J BEND

ASYNCHRONOUS

155 mA

16777216 words

NO

COMMON

3.3

3.3

4

SMALL OUTLINE

SOJ32,.44

DRAMs

1.27 mm

70 Cel

3-STATE

16MX4

16M

0 Cel

TIN LEAD

DUAL

1

R-PDSO-J32

3.6 V

3.76 mm

10.16 mm

Not Qualified

67108864 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

e0

.0009 Amp

21.08 mm

40 ns

HYS64D128320HU-6-B

Infineon Technologies

DDR DRAM MODULE

COMMERCIAL

184

DIMM

8192

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

2930 mA

134217728 words

YES

COMMON

2.5

2.6

64

MICROELECTRONIC ASSEMBLY

DIMM184

DRAMs

1.27 mm

70 Cel

3-STATE

128MX64

128M

0 Cel

MATTE TIN

DUAL

1

R-XDMA-N184

2.7 V

133 MHz

Not Qualified

8589934592 bit

2.3 V

AUTO/SELF REFRESH

e3

.06 Amp

.7 ns

HYB39S256400DCL-8

Infineon Technologies

SYNCHRONOUS DRAM

COMMERCIAL

54

TFBGA

8192

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

160 mA

67108864 words

1,2,4,8,FP

YES

COMMON

3.3

3.3

4

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA54,9X9,32

DRAMs

.8 mm

70 Cel

3-STATE

64MX4

64M

0 Cel

TIN LEAD

BOTTOM

1

R-PBGA-B54

3.6 V

1.2 mm

125 MHz

8 mm

Not Qualified

268435456 bit

3 V

AUTO/SELF REFRESH

e0

.002 Amp

1,2,4,8

12 mm

6 ns

HYS64D64020GU-8-A

Infineon Technologies

DDR DRAM MODULE

COMMERCIAL

184

DIMM

8192

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

1968 mA

67108864 words

YES

COMMON

2.5

2.5

64

MICROELECTRONIC ASSEMBLY

DIMM184

DRAMs

1.27 mm

70 Cel

3-STATE

64MX64

64M

0 Cel

DUAL

1

R-XDMA-N184

2.7 V

125 MHz

Not Qualified

4294967296 bit

2.3 V

AUTO/SELF REFRESH

NOT SPECIFIED

NOT SPECIFIED

.8 ns

HYB39S256160T-8A

Infineon Technologies

SYNCHRONOUS DRAM

COMMERCIAL

54

TSOP2

8192

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

GULL WING

SYNCHRONOUS

240 mA

16777216 words

1,2,4,8

YES

COMMON

3.3

3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP54,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

16MX16

16M

0 Cel

TIN LEAD

DUAL

1

R-PDSO-G54

3.6 V

1.2 mm

125 MHz

10.16 mm

Not Qualified

268435456 bit

3 V

AUTO/SELF REFRESH

e0

.002 Amp

1,2,4,8

22.22 mm

7 ns

HYB39S256160T-8B

Infineon Technologies

SYNCHRONOUS DRAM

COMMERCIAL

54

TSOP2

8192

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

GULL WING

SYNCHRONOUS

195 mA

16777216 words

1,2,4,8

YES

COMMON

3.3

3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP54,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

16MX16

16M

0 Cel

TIN LEAD

DUAL

1

R-PDSO-G54

3.6 V

1.2 mm

100 MHz

10.16 mm

Not Qualified

268435456 bit

3 V

AUTO/SELF REFRESH

e0

.002 Amp

1,2,4,8

22.22 mm

7 ns

HYS72D32300HBR-5-C

Infineon Technologies

DDR DRAM MODULE

COMMERCIAL

184

DIMM

8192

RECTANGULAR

UNSPECIFIED

SINGLE BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

2950 mA

33554432 words

YES

COMMON

2.6

2.6

72

MICROELECTRONIC ASSEMBLY

DIMM184

DRAMs

1.27 mm

70 Cel

3-STATE

32MX72

32M

0 Cel

MATTE TIN

DUAL

1

R-XDMA-N184

2.7 V

200 MHz

Not Qualified

2415919104 bit

2.5 V

AUTO/SELF REFRESH

e3

.44 Amp

.5 ns

HYB3164405AT-50

Infineon Technologies

EDO DRAM

COMMERCIAL

32

TSOP2

8192

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE WITH EDO

YES

1

CMOS

GULL WING

ASYNCHRONOUS

140 mA

16777216 words

NO

COMMON

3.3

3.3

4

SMALL OUTLINE, THIN PROFILE

TSOP32,.46

DRAMs

1.27 mm

70 Cel

3-STATE

16MX4

16M

0 Cel

TIN LEAD

DUAL

1

R-PDSO-G32

3.6 V

1.2 mm

10.16 mm

Not Qualified

67108864 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

e0

.0005 Amp

20.95 mm

50 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.