Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Refresh Cycles | Package Shape | Package Body Material | Access Mode | Surface Mount | No. of Functions | Technology | Screening Level | Nominal Negative Supply Voltage | Terminal Form | Parallel or Serial | Operating Mode | Maximum Supply Current | No. of Words | Sequential Burst Length | Self Refresh | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Mixed Memory Type | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Terminal Pitch | Maximum Operating Temperature | Reverse Pinout | Output Characteristics | Organization | No. of Words Code | Minimum Standby Voltage | Minimum Operating Temperature | Terminal Finish | Terminal Position | No. of Ports | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Maximum Clock Frequency (fCLK) | Width | Qualification | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Maximum Standby Current | Interleaved Burst Length | Length | Maximum Access Time |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
DDR DRAM MODULE |
COMMERCIAL |
184 |
DIMM |
8192 |
RECTANGULAR |
UNSPECIFIED |
SINGLE BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
2580 mA |
33554432 words |
YES |
COMMON |
2.5 |
2.5 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM184 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
32MX72 |
32M |
0 Cel |
DUAL |
1 |
R-XDMA-N184 |
2.7 V |
166 MHz |
Not Qualified |
2415919104 bit |
2.3 V |
AUTO/SELF REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.41 Amp |
.7 ns |
|||||||||||||||||
Infineon Technologies |
SYNCHRONOUS DRAM |
COMMERCIAL |
54 |
TFBGA |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
FOUR BANK PAGE BURST |
YES |
1 |
CMOS |
BALL |
SYNCHRONOUS |
190 mA |
67108864 words |
1,2,4,8,FP |
YES |
COMMON |
3.3 |
3.3 |
4 |
GRID ARRAY, THIN PROFILE, FINE PITCH |
BGA54,9X9,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
64MX4 |
64M |
0 Cel |
TIN LEAD |
BOTTOM |
1 |
R-PBGA-B54 |
3.6 V |
1.2 mm |
133 MHz |
8 mm |
Not Qualified |
268435456 bit |
3 V |
AUTO/SELF REFRESH |
e0 |
.002 Amp |
1,2,4,8 |
12 mm |
5.4 ns |
||||||||||||
|
Infineon Technologies |
DDR DRAM MODULE |
COMMERCIAL |
200 |
DIMM |
8192 |
RECTANGULAR |
UNSPECIFIED |
DUAL BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
860 mA |
67108864 words |
YES |
COMMON |
1.8 |
1.8 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM200,24 |
DRAMs |
.6 mm |
55 Cel |
3-STATE |
64MX64 |
64M |
0 Cel |
MATTE TIN |
DUAL |
1 |
R-XDMA-N200 |
1.9 V |
200 MHz |
Not Qualified |
4294967296 bit |
1.7 V |
AUTO/SELF REFRESH |
e3 |
.03 Amp |
.6 ns |
||||||||||||||||
Infineon Technologies |
SYNCHRONOUS DRAM |
COMMERCIAL |
54 |
TFBGA |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
FOUR BANK PAGE BURST |
YES |
1 |
CMOS |
BALL |
SYNCHRONOUS |
220 mA |
33554432 words |
1,2,4,8,FP |
YES |
COMMON |
3.3 |
3.3 |
8 |
GRID ARRAY, THIN PROFILE, FINE PITCH |
BGA54,9X9,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
32MX8 |
32M |
0 Cel |
TIN LEAD |
BOTTOM |
1 |
R-PBGA-B54 |
3.6 V |
1.2 mm |
166 MHz |
8 mm |
Not Qualified |
268435456 bit |
3 V |
AUTO/SELF REFRESH |
e0 |
.002 Amp |
1,2,4,8 |
12 mm |
5 ns |
||||||||||||
|
Infineon Technologies |
DDR2 DRAM |
60 |
TFBGA |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
FOUR BANK PAGE BURST |
YES |
1 |
CMOS |
BALL |
SYNCHRONOUS |
135 mA |
67108864 words |
4,8 |
YES |
COMMON |
1.8 |
1.8 |
4 |
GRID ARRAY, THIN PROFILE, FINE PITCH |
BGA60,9X11,32 |
DRAMs |
.8 mm |
3-STATE |
64MX4 |
64M |
BOTTOM |
1 |
R-PBGA-B60 |
1.9 V |
1.2 mm |
266 MHz |
10 mm |
Not Qualified |
268435456 bit |
1.7 V |
AUTO/SELF REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.004 Amp |
4,8 |
10.5 mm |
.5 ns |
||||||||||||||
Infineon Technologies |
FAST PAGE DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
8192 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
2000 mA |
16777216 words |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
16MX72 |
16M |
0 Cel |
DUAL |
1 |
R-XDMA-N168 |
3.6 V |
38.1 mm |
Not Qualified |
1207959552 bit |
3 V |
RAS ONLY/CAS BEFORE RAS REFRESH |
.05 Amp |
50 ns |
||||||||||||||||||||
Infineon Technologies |
FAST PAGE DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
8192 |
RECTANGULAR |
UNSPECIFIED |
FAST PAGE |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
2000 mA |
16777216 words |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
16MX72 |
16M |
0 Cel |
DUAL |
1 |
R-XDMA-N168 |
3.6 V |
38.1 mm |
Not Qualified |
1207959552 bit |
3 V |
RAS ONLY/CAS BEFORE RAS REFRESH |
.05 Amp |
50 ns |
||||||||||||||||||||
|
Infineon Technologies |
DDR DRAM MODULE |
COMMERCIAL |
240 |
DIMM |
8192 |
RECTANGULAR |
UNSPECIFIED |
SINGLE BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
880 mA |
33554432 words |
YES |
COMMON |
1.8 |
1.8 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM240,40 |
DRAMs |
1 mm |
65 Cel |
3-STATE |
32MX64 |
32M |
0 Cel |
MATTE TIN |
DUAL |
1 |
R-XDMA-N240 |
1.9 V |
267 MHz |
Not Qualified |
2147483648 bit |
1.7 V |
AUTO/SELF REFRESH |
e3 |
.5 ns |
|||||||||||||||||
Infineon Technologies |
FAST PAGE DRAM |
COMMERCIAL |
34 |
SOJ |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
110 mA |
8388608 words |
YES |
COMMON |
3.3 |
3.3 |
8 |
SMALL OUTLINE |
SOJ34,.54 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
8MX8 |
8M |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-J34 |
Not Qualified |
67108864 bit |
e0 |
.0002 Amp |
50 ns |
|||||||||||||||||||||||||
Infineon Technologies |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
8192 |
RECTANGULAR |
UNSPECIFIED |
SINGLE BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
2160 mA |
33554432 words |
YES |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
32MX72 |
32M |
0 Cel |
DUAL |
1 |
R-XDMA-N168 |
3.6 V |
133 MHz |
Not Qualified |
2415919104 bit |
3 V |
AUTO/SELF REFRESH |
.018 Amp |
5.4 ns |
|||||||||||||||||||
Infineon Technologies |
SYNCHRONOUS DRAM |
COMMERCIAL |
54 |
TSOP2 |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
FOUR BANK PAGE BURST |
YES |
1 |
CMOS |
GULL WING |
SYNCHRONOUS |
270 mA |
33554432 words |
1,2,4,8 |
YES |
COMMON |
3.3 |
3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP54,.46,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
32MX8 |
32M |
0 Cel |
TIN LEAD |
DUAL |
1 |
R-PDSO-G54 |
3.6 V |
1.2 mm |
133 MHz |
10.16 mm |
Not Qualified |
268435456 bit |
3 V |
AUTO/SELF REFRESH |
e0 |
.002 Amp |
1,2,4,8 |
22.22 mm |
5.4 ns |
||||||||||||
Infineon Technologies |
DDR DRAM MODULE |
COMMERCIAL |
184 |
DIMM |
8192 |
RECTANGULAR |
UNSPECIFIED |
SINGLE BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
2025 mA |
33554432 words |
YES |
COMMON |
2.5 |
2.5 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM184 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
32MX72 |
32M |
0 Cel |
DUAL |
1 |
R-XDMA-N184 |
2.7 V |
143 MHz |
Not Qualified |
2415919104 bit |
2.3 V |
AUTO/SELF REFRESH |
.072 Amp |
.75 ns |
|||||||||||||||||||
Infineon Technologies |
SYNCHRONOUS DRAM |
COMMERCIAL |
54 |
TSOP2 |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
FOUR BANK PAGE BURST |
YES |
1 |
CMOS |
GULL WING |
SYNCHRONOUS |
300 mA |
33554432 words |
1,2,4,8,FP |
YES |
COMMON |
3.3 |
3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP54,.46,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
32MX16 |
32M |
0 Cel |
TIN LEAD |
DUAL |
1 |
R-PDSO-G54 |
3.6 V |
1.2 mm |
143 MHz |
10.16 mm |
Not Qualified |
536870912 bit |
3 V |
AUTO/SELF REFRESH |
e0 |
.003 Amp |
1,2,4,8 |
22.22 mm |
5.4 ns |
||||||||||||
Infineon Technologies |
EDO DRAM |
COMMERCIAL |
50 |
TSOP2 |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE WITH EDO |
YES |
1 |
CMOS |
GULL WING |
ASYNCHRONOUS |
140 mA |
4194304 words |
NO |
COMMON |
3.3 |
3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP50,.46,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
4MX16 |
4M |
0 Cel |
TIN LEAD |
DUAL |
1 |
R-PDSO-G50 |
3.6 V |
1.2 mm |
10.16 mm |
Not Qualified |
67108864 bit |
3 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
e0 |
.0009 Amp |
20.95 mm |
50 ns |
|||||||||||||||
Infineon Technologies |
SYNCHRONOUS DRAM |
COMMERCIAL |
54 |
TSOP2 |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
FOUR BANK PAGE BURST |
YES |
1 |
CMOS |
GULL WING |
SYNCHRONOUS |
240 mA |
67108864 words |
1,2,4,8,FP |
YES |
COMMON |
3.3 |
3.3 |
4 |
SMALL OUTLINE, THIN PROFILE |
TSOP54,.46,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
64MX4 |
64M |
0 Cel |
TIN LEAD |
DUAL |
1 |
R-PDSO-G54 |
3.6 V |
1.2 mm |
133 MHz |
10.16 mm |
Not Qualified |
268435456 bit |
3 V |
AUTO/SELF REFRESH |
e0 |
.002 Amp |
1,2,4,8 |
22.22 mm |
5.4 ns |
||||||||||||
Infineon Technologies |
SYNCHRONOUS DRAM |
COMMERCIAL |
54 |
TSOP2 |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
FOUR BANK PAGE BURST |
YES |
1 |
CMOS |
GULL WING |
SYNCHRONOUS |
270 mA |
67108864 words |
1,2,4,8 |
YES |
COMMON |
3.3 |
3.3 |
4 |
SMALL OUTLINE, THIN PROFILE |
TSOP54,.46,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
64MX4 |
64M |
0 Cel |
TIN LEAD |
DUAL |
1 |
R-PDSO-G54 |
3.6 V |
1.2 mm |
133 MHz |
10.16 mm |
Not Qualified |
268435456 bit |
3 V |
AUTO/SELF REFRESH |
e0 |
.002 Amp |
1,2,4,8 |
22.22 mm |
5.4 ns |
||||||||||||
Infineon Technologies |
DDR DRAM MODULE |
COMMERCIAL |
184 |
DIMM |
8192 |
RECTANGULAR |
UNSPECIFIED |
DUAL BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
4050 mA |
134217728 words |
YES |
COMMON |
2.5 |
2.5 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM184 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
128MX72 |
128M |
0 Cel |
DUAL |
1 |
R-XDMA-N184 |
2.7 V |
143 MHz |
Not Qualified |
9663676416 bit |
2.3 V |
AUTO/SELF REFRESH |
.75 ns |
||||||||||||||||||||
|
Infineon Technologies |
DDR DRAM MODULE |
COMMERCIAL |
184 |
DIMM |
8192 |
RECTANGULAR |
UNSPECIFIED |
DUAL BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
2024 mA |
67108864 words |
YES |
COMMON |
2.5 |
2.6 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM184 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
64MX64 |
64M |
0 Cel |
MATTE TIN |
DUAL |
1 |
R-XDMA-N184 |
2.7 V |
167 MHz |
Not Qualified |
4294967296 bit |
2.3 V |
AUTO/SELF REFRESH |
e3 |
.7 ns |
|||||||||||||||||
|
Infineon Technologies |
DDR DRAM MODULE |
COMMERCIAL |
240 |
DIMM |
8192 |
RECTANGULAR |
UNSPECIFIED |
DUAL BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
2820 mA |
268435456 words |
YES |
COMMON |
1.8 |
1.8 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM240,40 |
DRAMs |
1 mm |
55 Cel |
3-STATE |
256MX72 |
256M |
0 Cel |
DUAL |
1 |
R-XDMA-N240 |
1.9 V |
200 MHz |
Not Qualified |
19327352832 bit |
1.7 V |
AUTO/SELF REFRESH |
.62 Amp |
.6 ns |
||||||||||||||||||
Infineon Technologies |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
8192 |
RECTANGULAR |
UNSPECIFIED |
DUAL BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
9720 mA |
134217728 words |
YES |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
128MX72 |
128M |
0 Cel |
DUAL |
1 |
R-XDMA-N168 |
3.6 V |
133 MHz |
Not Qualified |
9663676416 bit |
3 V |
AUTO/SELF REFRESH |
.072 Amp |
5.4 ns |
|||||||||||||||||||
Infineon Technologies |
DDR DRAM MODULE |
COMMERCIAL |
200 |
DIMM |
8192 |
RECTANGULAR |
UNSPECIFIED |
SINGLE BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
940 mA |
16777216 words |
YES |
COMMON |
2.5 |
2.5 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM200,24 |
DRAMs |
.6 mm |
70 Cel |
3-STATE |
16MX64 |
16M |
0 Cel |
DUAL |
1 |
R-XDMA-N200 |
2.7 V |
143 MHz |
Not Qualified |
1073741824 bit |
2.3 V |
AUTO/SELF REFRESH |
.75 ns |
||||||||||||||||||||
Infineon Technologies |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
8192 |
RECTANGULAR |
UNSPECIFIED |
DUAL BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
210 mA |
67108864 words |
YES |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
64MX72 |
64M |
0 Cel |
DUAL |
1 |
R-XDMA-N168 |
3.6 V |
100 MHz |
Not Qualified |
4831838208 bit |
3 V |
AUTO/SELF REFRESH |
.002 Amp |
6 ns |
|||||||||||||||||||
Infineon Technologies |
DDR DRAM MODULE |
COMMERCIAL |
184 |
DIMM |
8192 |
RECTANGULAR |
UNSPECIFIED |
DUAL BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
2295 mA |
67108864 words |
YES |
COMMON |
2.5 |
2.5 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM184 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
64MX72 |
64M |
0 Cel |
DUAL |
1 |
R-XDMA-N184 |
2.7 V |
125 MHz |
Not Qualified |
4831838208 bit |
2.3 V |
AUTO/SELF REFRESH |
.8 ns |
||||||||||||||||||||
Infineon Technologies |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
8192 |
RECTANGULAR |
UNSPECIFIED |
SINGLE BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
210 mA |
33554432 words |
YES |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
32MX72 |
32M |
0 Cel |
DUAL |
1 |
R-XDMA-N168 |
3.6 V |
100 MHz |
Not Qualified |
2415919104 bit |
3 V |
AUTO/SELF REFRESH |
.002 Amp |
6 ns |
|||||||||||||||||||
Infineon Technologies |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
3960 mA |
67108864 words |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
64MX72 |
64M |
0 Cel |
DUAL |
R-PDMA-N168 |
133 MHz |
Not Qualified |
4831838208 bit |
.036 Amp |
5.4 ns |
|||||||||||||||||||||||||||
|
Infineon Technologies |
DDR DRAM MODULE |
COMMERCIAL |
200 |
DIMM |
8192 |
RECTANGULAR |
UNSPECIFIED |
SINGLE BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
840 mA |
33554432 words |
YES |
COMMON |
1.8 |
1.8 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM200,24 |
DRAMs |
.6 mm |
55 Cel |
3-STATE |
32MX64 |
32M |
0 Cel |
MATTE TIN |
DUAL |
1 |
R-XDMA-N200 |
1.9 V |
200 MHz |
Not Qualified |
2147483648 bit |
1.7 V |
AUTO/SELF REFRESH |
e3 |
.6 ns |
|||||||||||||||||
Infineon Technologies |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
8192 |
RECTANGULAR |
UNSPECIFIED |
SINGLE BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
680 mA |
16777216 words |
YES |
COMMON |
3.3 |
3.3 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
16MX64 |
16M |
0 Cel |
DUAL |
1 |
R-XDMA-N168 |
3.6 V |
100 MHz |
Not Qualified |
1073741824 bit |
3 V |
AUTO/SELF REFRESH |
.008 Amp |
6 ns |
|||||||||||||||||||
|
Infineon Technologies |
DDR1 DRAM |
OTHER |
60 |
FBGA |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
BALL |
75 mA |
33554432 words |
2,4,8,16 |
COMMON |
1.8 |
1.8 |
16 |
GRID ARRAY, FINE PITCH |
BGA60,9X10,32 |
DRAMs |
.8 mm |
85 Cel |
3-STATE |
32MX16 |
32M |
-25 Cel |
BOTTOM |
R-PBGA-B60 |
133 MHz |
Not Qualified |
536870912 bit |
.0007 Amp |
2,4,8,16 |
6.5 ns |
||||||||||||||||||||||||
Infineon Technologies |
DDR DRAM MODULE |
COMMERCIAL |
184 |
DIMM |
8192 |
RECTANGULAR |
UNSPECIFIED |
SINGLE BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
1576 mA |
33554432 words |
YES |
COMMON |
2.5 |
2.5 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM184 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
32MX64 |
32M |
0 Cel |
DUAL |
1 |
R-XDMA-N184 |
2.7 V |
143 MHz |
Not Qualified |
2147483648 bit |
2.3 V |
AUTO/SELF REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.75 ns |
||||||||||||||||||
Infineon Technologies |
DDR DRAM MODULE |
COMMERCIAL |
184 |
DIMM |
8192 |
RECTANGULAR |
UNSPECIFIED |
SINGLE BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
1000 mA |
16777216 words |
YES |
COMMON |
2.6 |
2.6 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM184 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
16MX64 |
16M |
0 Cel |
DUAL |
1 |
R-XDMA-N184 |
2.7 V |
200 MHz |
Not Qualified |
1073741824 bit |
2.5 V |
AUTO/SELF REFRESH |
.6 ns |
||||||||||||||||||||
Infineon Technologies |
SYNCHRONOUS DRAM |
OTHER |
54 |
FBGA |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
FOUR BANK PAGE BURST |
YES |
1 |
CMOS |
BALL |
SYNCHRONOUS |
90 mA |
16777216 words |
1,2,4,8,FP |
YES |
COMMON |
1.8 |
1.8 |
16 |
GRID ARRAY, FINE PITCH |
BGA54,9X9,32 |
DRAMs |
.8 mm |
85 Cel |
3-STATE |
16MX16 |
16M |
-25 Cel |
TIN LEAD |
BOTTOM |
1 |
R-PBGA-B54 |
1.95 V |
133 MHz |
8 mm |
Not Qualified |
268435456 bit |
1.65 V |
AUTO/SELF REFRESH |
e0 |
.00035 Amp |
1,2,4,8 |
12 mm |
5.4 ns |
|||||||||||||
Infineon Technologies |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
2160 mA |
33554432 words |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
32MX72 |
32M |
0 Cel |
DUAL |
R-PDMA-N168 |
133 MHz |
Not Qualified |
2415919104 bit |
.018 Amp |
5.4 ns |
|||||||||||||||||||||||||||
Infineon Technologies |
FAST PAGE DRAM |
COMMERCIAL |
32 |
TSOP2 |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE |
YES |
1 |
CMOS |
GULL WING |
ASYNCHRONOUS |
105 mA |
16777216 words |
NO |
COMMON |
3.3 |
3.3 |
4 |
SMALL OUTLINE, THIN PROFILE |
TSOP32,.46 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
16MX4 |
16M |
0 Cel |
TIN LEAD |
DUAL |
1 |
R-PDSO-G32 |
3.6 V |
1.2 mm |
10.16 mm |
Not Qualified |
67108864 bit |
3 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
e0 |
.0009 Amp |
20.95 mm |
60 ns |
|||||||||||||||
Infineon Technologies |
SYNCHRONOUS DRAM MODULE |
COMMERCIAL |
168 |
DIMM |
8192 |
RECTANGULAR |
UNSPECIFIED |
SINGLE BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
2160 mA |
33554432 words |
YES |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
32MX72 |
32M |
0 Cel |
DUAL |
1 |
R-XDMA-N168 |
3.6 V |
133 MHz |
Not Qualified |
2415919104 bit |
3 V |
AUTO/SELF REFRESH |
.018 Amp |
5.4 ns |
|||||||||||||||||||
Infineon Technologies |
SYNCHRONOUS DRAM |
OTHER |
54 |
TFBGA |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
FOUR BANK PAGE BURST |
YES |
1 |
CMOS |
BALL |
SYNCHRONOUS |
140 mA |
16777216 words |
1,2,4,8,FP |
YES |
COMMON |
2.5 |
1.8,2.5 |
16 |
GRID ARRAY, THIN PROFILE, FINE PITCH |
BGA54,9X9,32 |
DRAMs |
.8 mm |
85 Cel |
3-STATE |
16MX16 |
16M |
-25 Cel |
TIN LEAD |
BOTTOM |
1 |
R-PBGA-B54 |
3.6 V |
1.2 mm |
125 MHz |
8 mm |
Not Qualified |
268435456 bit |
2.3 V |
AUTO/SELF REFRESH |
e0 |
.0006 Amp |
1,2,4,8 |
12 mm |
7.5 ns |
||||||||||||
Infineon Technologies |
FAST PAGE DRAM |
COMMERCIAL |
34 |
TSOP |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
110 mA |
16777216 words |
YES |
COMMON |
3.3 |
3.3 |
4 |
SMALL OUTLINE, THIN PROFILE |
TSOP34,.56 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
16MX4 |
16M |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G34 |
Not Qualified |
67108864 bit |
e0 |
.0002 Amp |
50 ns |
|||||||||||||||||||||||||
Infineon Technologies |
DDR DRAM MODULE |
COMMERCIAL |
240 |
DIMM |
8192 |
RECTANGULAR |
UNSPECIFIED |
DUAL BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
1574 mA |
134217728 words |
YES |
COMMON |
1.8 |
1.8 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM240,40 |
DRAMs |
1 mm |
55 Cel |
3-STATE |
128MX72 |
128M |
0 Cel |
DUAL |
1 |
R-XDMA-N240 |
1.9 V |
200 MHz |
Not Qualified |
9663676416 bit |
1.7 V |
AUTO/SELF REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.44 Amp |
.6 ns |
|||||||||||||||||
Infineon Technologies |
SYNCHRONOUS DRAM |
COMMERCIAL |
54 |
TFBGA |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
FOUR BANK PAGE BURST |
YES |
1 |
CMOS |
BALL |
SYNCHRONOUS |
190 mA |
67108864 words |
1,2,4,8,FP |
YES |
COMMON |
3.3 |
3.3 |
4 |
GRID ARRAY, THIN PROFILE, FINE PITCH |
BGA54,9X9,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
64MX4 |
64M |
0 Cel |
TIN LEAD |
BOTTOM |
1 |
R-PBGA-B54 |
3.6 V |
1.2 mm |
143 MHz |
8 mm |
Not Qualified |
268435456 bit |
3 V |
AUTO/SELF REFRESH |
e0 |
.002 Amp |
1,2,4,8 |
12 mm |
5.4 ns |
||||||||||||
Infineon Technologies |
DDR DRAM MODULE |
COMMERCIAL |
184 |
DIMM |
8192 |
RECTANGULAR |
UNSPECIFIED |
SINGLE BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
2100 mA |
33554432 words |
YES |
COMMON |
2.5 |
2.5 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM184 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
32MX72 |
32M |
0 Cel |
DUAL |
1 |
R-XDMA-N184 |
1 |
2.7 V |
133 MHz |
Not Qualified |
2415919104 bit |
2.3 V |
AUTO/SELF REFRESH |
.37 Amp |
.75 ns |
||||||||||||||||||
|
Infineon Technologies |
DDR DRAM MODULE |
COMMERCIAL |
184 |
DIMM |
8192 |
RECTANGULAR |
UNSPECIFIED |
SINGLE BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
1840 mA |
67108864 words |
YES |
COMMON |
2.6 |
2.6 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM184 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
64MX64 |
64M |
0 Cel |
DUAL |
1 |
R-XDMA-N184 |
2.7 V |
200 MHz |
Not Qualified |
4294967296 bit |
2.5 V |
AUTO/SELF REFRESH |
.016 Amp |
.5 ns |
||||||||||||||||||
Infineon Technologies |
FAST PAGE DRAM |
COMMERCIAL |
32 |
SOJ |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE |
YES |
1 |
CMOS |
J BEND |
ASYNCHRONOUS |
155 mA |
16777216 words |
NO |
COMMON |
3.3 |
3.3 |
4 |
SMALL OUTLINE |
SOJ32,.44 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
16MX4 |
16M |
0 Cel |
TIN LEAD |
DUAL |
1 |
R-PDSO-J32 |
3.6 V |
3.76 mm |
10.16 mm |
Not Qualified |
67108864 bit |
3 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
e0 |
.0009 Amp |
21.08 mm |
40 ns |
|||||||||||||||
|
Infineon Technologies |
DDR DRAM MODULE |
COMMERCIAL |
184 |
DIMM |
8192 |
RECTANGULAR |
UNSPECIFIED |
DUAL BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
2930 mA |
134217728 words |
YES |
COMMON |
2.5 |
2.6 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM184 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
128MX64 |
128M |
0 Cel |
MATTE TIN |
DUAL |
1 |
R-XDMA-N184 |
2.7 V |
133 MHz |
Not Qualified |
8589934592 bit |
2.3 V |
AUTO/SELF REFRESH |
e3 |
.06 Amp |
.7 ns |
||||||||||||||||
Infineon Technologies |
SYNCHRONOUS DRAM |
COMMERCIAL |
54 |
TFBGA |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
FOUR BANK PAGE BURST |
YES |
1 |
CMOS |
BALL |
SYNCHRONOUS |
160 mA |
67108864 words |
1,2,4,8,FP |
YES |
COMMON |
3.3 |
3.3 |
4 |
GRID ARRAY, THIN PROFILE, FINE PITCH |
BGA54,9X9,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
64MX4 |
64M |
0 Cel |
TIN LEAD |
BOTTOM |
1 |
R-PBGA-B54 |
3.6 V |
1.2 mm |
125 MHz |
8 mm |
Not Qualified |
268435456 bit |
3 V |
AUTO/SELF REFRESH |
e0 |
.002 Amp |
1,2,4,8 |
12 mm |
6 ns |
||||||||||||
Infineon Technologies |
DDR DRAM MODULE |
COMMERCIAL |
184 |
DIMM |
8192 |
RECTANGULAR |
UNSPECIFIED |
DUAL BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
1968 mA |
67108864 words |
YES |
COMMON |
2.5 |
2.5 |
64 |
MICROELECTRONIC ASSEMBLY |
DIMM184 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
64MX64 |
64M |
0 Cel |
DUAL |
1 |
R-XDMA-N184 |
2.7 V |
125 MHz |
Not Qualified |
4294967296 bit |
2.3 V |
AUTO/SELF REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.8 ns |
||||||||||||||||||
Infineon Technologies |
SYNCHRONOUS DRAM |
COMMERCIAL |
54 |
TSOP2 |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
FOUR BANK PAGE BURST |
YES |
1 |
CMOS |
GULL WING |
SYNCHRONOUS |
240 mA |
16777216 words |
1,2,4,8 |
YES |
COMMON |
3.3 |
3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP54,.46,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
16MX16 |
16M |
0 Cel |
TIN LEAD |
DUAL |
1 |
R-PDSO-G54 |
3.6 V |
1.2 mm |
125 MHz |
10.16 mm |
Not Qualified |
268435456 bit |
3 V |
AUTO/SELF REFRESH |
e0 |
.002 Amp |
1,2,4,8 |
22.22 mm |
7 ns |
||||||||||||
Infineon Technologies |
SYNCHRONOUS DRAM |
COMMERCIAL |
54 |
TSOP2 |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
FOUR BANK PAGE BURST |
YES |
1 |
CMOS |
GULL WING |
SYNCHRONOUS |
195 mA |
16777216 words |
1,2,4,8 |
YES |
COMMON |
3.3 |
3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP54,.46,32 |
DRAMs |
.8 mm |
70 Cel |
3-STATE |
16MX16 |
16M |
0 Cel |
TIN LEAD |
DUAL |
1 |
R-PDSO-G54 |
3.6 V |
1.2 mm |
100 MHz |
10.16 mm |
Not Qualified |
268435456 bit |
3 V |
AUTO/SELF REFRESH |
e0 |
.002 Amp |
1,2,4,8 |
22.22 mm |
7 ns |
||||||||||||
|
Infineon Technologies |
DDR DRAM MODULE |
COMMERCIAL |
184 |
DIMM |
8192 |
RECTANGULAR |
UNSPECIFIED |
SINGLE BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
2950 mA |
33554432 words |
YES |
COMMON |
2.6 |
2.6 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM184 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
32MX72 |
32M |
0 Cel |
MATTE TIN |
DUAL |
1 |
R-XDMA-N184 |
2.7 V |
200 MHz |
Not Qualified |
2415919104 bit |
2.5 V |
AUTO/SELF REFRESH |
e3 |
.44 Amp |
.5 ns |
||||||||||||||||
Infineon Technologies |
EDO DRAM |
COMMERCIAL |
32 |
TSOP2 |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE WITH EDO |
YES |
1 |
CMOS |
GULL WING |
ASYNCHRONOUS |
140 mA |
16777216 words |
NO |
COMMON |
3.3 |
3.3 |
4 |
SMALL OUTLINE, THIN PROFILE |
TSOP32,.46 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
16MX4 |
16M |
0 Cel |
TIN LEAD |
DUAL |
1 |
R-PDSO-G32 |
3.6 V |
1.2 mm |
10.16 mm |
Not Qualified |
67108864 bit |
3 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
e0 |
.0005 Amp |
20.95 mm |
50 ns |
DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.
DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.
DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.
There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.
One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.