COMMERCIAL DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
TM893GBK32S-60	Texas Instruments	EDO DRAM MODULE	COMMERCIAL	72	SIMM	2048	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	MOS	NO LEAD	ASYNCHRONOUS		8388608 words			5		32	MICROELECTRONIC ASSEMBLY					70 Cel	3-STATE	8MX32	8M		SINGLE	1	R-XSMA-N72	5.5 V				Not Qualified	268435456 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						60 ns
TM2SN64EPU-12	Texas Instruments	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	MOS	NO LEAD	SYNCHRONOUS	1240 mA	2097152 words		COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	2MX64	2M		DUAL	1	R-XDMA-N168	3.6 V		83.3 MHz		Not Qualified	134217728 bit	3 V					.016 Amp		9 ns
TMS44C250-12DZL	Texas Instruments	VIDEO DRAM	COMMERCIAL	28	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		262144 words			5		4	SMALL OUTLINE				1.27 mm	70 Cel	3-STATE	256KX4	256K		DUAL	2	R-PDSO-J28	5.5 V	3.76 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 512 X 4 SAM PORT					18.415 mm	120 ns
TMS44101-60SD	Texas Instruments	NIBBLE MODE DRAM	COMMERCIAL	20	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY	NIBBLE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	95 mA	4194304 words		SEPARATE	5	5	1	IN-LINE	ZIP20,.1		DRAMs	1.27 mm	70 Cel	3-STATE	4MX1	4M		ZIG-ZAG	1	R-PZIP-T20	5.5 V	10.16 mm		2.8 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.001 Amp		60 ns
TMS464400-80DGC	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	32	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		16777216 words			3.3		4	SMALL OUTLINE, THIN PROFILE				1.27 mm	70 Cel	3-STATE	16MX4	16M		DUAL	1	R-PDSO-G32	3.6 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					20.95 mm	80 ns
TMS427400PDJ-70	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	24	SOJ		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		4194304 words	YES		3.3		4	SMALL OUTLINE				1.27 mm	70 Cel		4MX4	4M		DUAL	1	R-PDSO-J24	3.6 V	3.76 mm		7.62 mm	Not Qualified	16777216 bit	3 V	CAS BEFORE RAS/SELF REFRESH					17.145 mm	70 ns
TM8SK64JPU-12	Texas Instruments	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144		16384	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		8388608 words	YES		3.3		64	MICROELECTRONIC ASSEMBLY					70 Cel	3-STATE	8MX64	8M		DUAL	1	R-XDMA-N144	3.6 V				Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH
TM2EJ64EPN-60	Texas Instruments	EDO DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	MOS	NO LEAD	ASYNCHRONOUS	720 mA	2097152 words	NO	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32		DRAMs	.8 mm	70 Cel	3-STATE	2MX64	2M		DUAL	1	R-XDMA-N144	3.6 V				Not Qualified	134217728 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				.008 Amp		60 ns
TMS428169-60DGE	Texas Instruments	EDO DRAM	COMMERCIAL	44	TSOP2	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS	190 mA	1048576 words	NO	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44/50,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	1MX16	1M		DUAL	1	R-PDSO-G44	3.6 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.0005 Amp	20.95 mm	60 ns
TM16100EBD9-60	Texas Instruments	FAST PAGE DRAM MODULE	COMMERCIAL	30	SIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	810 mA	16777216 words		COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIM30		DRAMs	2.54 mm	70 Cel	3-STATE	16MX9	16M		SINGLE	1	R-XSMA-N30	5.5 V				Not Qualified	150994944 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.009 Amp		60 ns
TMS416100-80DGD	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	24	TSOP2-R	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		16777216 words			5		1	SMALL OUTLINE, THIN PROFILE				1.27 mm	70 Cel		16MX1	16M		DUAL	1	R-PDSO-G24	5.5 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH					18.41 mm	80 ns
SM4256-20JDL	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	16	DIP	256	RECTANGULAR	CERAMIC		NO		MOS	THROUGH-HOLE			262144 words		SEPARATE	5	5	1	IN-LINE	DIP16,.3		DRAMs	2.54 mm	70 Cel	3-STATE	256KX1	256K		DUAL		R-XDIP-T16					Not Qualified	262144 bit				NOT SPECIFIED	NOT SPECIFIED			200 ns
TMS44410-80DJ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	75 mA	1048576 words	NO	COMMON	5	5	4	SMALL OUTLINE	SOJ20/26,.34		DRAMs	1.27 mm	70 Cel	3-STATE	1MX4	1M		DUAL	1	R-PDSO-J20	5.5 V	3.76 mm		7.57 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.001 Amp	17.145 mm	80 ns
TMS44C256-70SD	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	20	ZIP	512	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	THROUGH-HOLE		80 mA	262144 words		COMMON	5	5	4	IN-LINE	ZIP20,.1		DRAMs	1.27 mm	70 Cel	3-STATE	256KX4	256K		ZIG-ZAG		R-PZIP-T20					Not Qualified	1048576 bit				NOT SPECIFIED	NOT SPECIFIED	.002 Amp		70 ns
TM8EJ64NPU-60	Texas Instruments	EDO DRAM MODULE	COMMERCIAL	144	DIMM	8192	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	444 mA	8388608 words	NO	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32		DRAMs	.8 mm	70 Cel	3-STATE	8MX64	8M		DUAL	1	R-XDMA-N144	3.6 V				Not Qualified	536870912 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				.004 Amp		60 ns
TMS55176-70DGH	Texas Instruments	VIDEO DRAM	COMMERCIAL	64	SSOP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words			5		16	SMALL OUTLINE, SHRINK PITCH				.8 mm	70 Cel	3-STATE	256KX16	256K		DUAL	2	R-PDSO-G64	5.5 V	2.38 mm		12.04 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 256 X 16 SAM PORT					26.295 mm	70 ns
TMS426800A-50DGC	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	28	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		90 mA	2097152 words	NO	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP28,.46		DRAMs	1.27 mm	70 Cel	3-STATE	2MX8	2M		DUAL		R-PDSO-G28					Not Qualified	16777216 bit				NOT SPECIFIED	NOT SPECIFIED	.001 Amp		50 ns
TMS44C256J-12	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	20	DIP	512	RECTANGULAR	CERAMIC		NO		CMOS	THROUGH-HOLE		60 mA	262144 words		COMMON	5	5	4	IN-LINE	DIP20,.3		DRAMs	2.54 mm	70 Cel	3-STATE	256KX4	256K		DUAL		R-XDIP-T20					Not Qualified	1048576 bit				NOT SPECIFIED	NOT SPECIFIED	.003 Amp		120 ns
SMJ44C256-10HJL	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	20	SOJ	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		262144 words			5		4	SMALL OUTLINE				1.27 mm	70 Cel	3-STATE	256KX4	256K		DUAL	1	R-CDSO-J20	5.5 V	3.48 mm		8.382 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					17.145 mm	100 ns
TMS626162-12A	Texas Instruments	SYNCHRONOUS DRAM	COMMERCIAL	50	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		1048576 words	YES		3.3		16	SMALL OUTLINE, THIN PROFILE				.8 mm	70 Cel	3-STATE	1MX16	1M		DUAL	1	R-PDSO-G50	3.63 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	3.135 V	AUTO/SELF REFRESH					20.95 mm
TM124MBK36C-70	Texas Instruments	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	900 mA	1048576 words		COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	1MX36	1M		SINGLE	1	R-XSMA-N72	5.5 V	25.527 mm			Not Qualified	37748736 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				.01 Amp		70 ns
TM4256FU8-10L	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	30	SIMM	256	RECTANGULAR	PLASTIC/EPOXY		NO		MOS	NO LEAD			262144 words		COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	SIM30		DRAMs	2.54 mm	70 Cel	3-STATE	256KX8	256K		SINGLE		R-PSMA-N30		16.51 mm			Not Qualified	2097152 bit								100 ns
TMS416400PDGA-70	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	24	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		4194304 words	YES		5		4	SMALL OUTLINE, THIN PROFILE				1.27 mm	70 Cel		4MX4	4M		DUAL	1	R-PDSO-G24	5.5 V	1.2 mm		7.62 mm	Not Qualified	16777216 bit	4.5 V	CAS BEFORE RAS/SELF REFRESH					17.14 mm	70 ns
TMS45160DZP-60	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	40	SOJ		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	SYNCHRONOUS		262144 words	YES		5		16	SMALL OUTLINE					70 Cel		256KX16	256K		DUAL	1	R-PDSO-J40	5.5 V				Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH						60 ns
TM124BBK32H-50	Texas Instruments	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	360 mA	1048576 words	NO	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	1MX32	1M		SINGLE	1	R-XSMA-N72	5.5 V	25.4 mm			Not Qualified	33554432 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				.002 Amp		50 ns
TMS416100-70DGC	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	24	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		16777216 words			5		1	SMALL OUTLINE, THIN PROFILE				1.27 mm	70 Cel		16MX1	16M		DUAL	1	R-PDSO-G24	5.5 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH					18.41 mm	70 ns
TMS4464-15FML	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	18	QCCJ	256	RECTANGULAR	PLASTIC/EPOXY	PAGE	YES	1	NMOS	J BEND	ASYNCHRONOUS		65536 words		COMMON	5	5	4	CHIP CARRIER	LDCC18,.33X.53		DRAMs	1.27 mm	70 Cel	3-STATE	64KX4	64K		QUAD	1	R-PQCC-J18	5.5 V	3.53 mm		7.366 mm	Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED		12.446 mm	150 ns
TMS417400-80DZ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	24	SOJ	2048	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		4194304 words			5		4	SMALL OUTLINE				1.27 mm	70 Cel		4MX4	4M		DUAL	1	R-PDSO-J24	5.5 V	3.76 mm		10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH					18.415 mm	80 ns
TM124MBK36G-80L	Texas Instruments	FAST PAGE DRAM MODULE	COMMERCIAL	72		1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		1048576 words			5		36	MICROELECTRONIC ASSEMBLY		18			70 Cel	3-STATE	1MX36	1M		SINGLE	1	R-XSMA-N72	5.5 V				Not Qualified	37748736 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						80 ns
TMS44400-70DM	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	85 mA	1048576 words	NO	COMMON	5	5	4	SMALL OUTLINE	SOJ20/26,.4		DRAMs	1.27 mm	70 Cel	3-STATE	1MX4	1M		DUAL	1	R-PDSO-J20	5.5 V	3.76 mm		8.89 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.001 Amp	17.145 mm	70 ns
TMS426800P-70DE	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	32	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		2097152 words	YES		3.3		8	SMALL OUTLINE, THIN PROFILE				1.27 mm	70 Cel		2MX8	2M		DUAL	1	R-PDSO-G32	3.6 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	3 V	RAS ONLY; CAS BEFORE RAS; HIDDEN; SELF REFRESH					20.95 mm	70 ns
TM4256GV8-10L	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	30		256		PLASTIC/EPOXY		NO		MOS				262144 words		COMMON	5	5	8		SIP30,.2		DRAMs	2.54 mm	70 Cel	3-STATE	256KX8	256K		SINGLE				11.43 mm			Not Qualified	2097152 bit								100 ns
TMS44410-70DM	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	85 mA	1048576 words	NO	COMMON	5	5	4	SMALL OUTLINE	SOJ20/26,.4		DRAMs	1.27 mm	70 Cel	3-STATE	1MX4	1M		DUAL	1	R-PDSO-J20	5.5 V	3.76 mm		8.89 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.001 Amp	17.145 mm	70 ns
TM248CBK32I-60	Texas Instruments	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	360 mA	2097152 words	NO	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	2MX32	2M		SINGLE	1	R-XSMA-N72	5.5 V	25.4 mm			Not Qualified	67108864 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				.004 Amp		60 ns
TMS626812B-10ADGE	Texas Instruments	SYNCHRONOUS DRAM	COMMERCIAL	44	TSOP2		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	MOS	GULL WING	SYNCHRONOUS		2097152 words	YES		3.3		8	SMALL OUTLINE, THIN PROFILE				.8 mm	70 Cel		2MX8	2M		DUAL	1	R-PDSO-G44	3.6 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	3 V	AUTO/SELF REFRESH					18.41 mm	6 ns
TM124MBK36B-7	Texas Instruments	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	765 mA	1048576 words		COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72	18	DRAMs	1.27 mm	70 Cel	3-STATE	1MX36	1M		SINGLE	1	R-XSMA-N72	5.25 V	25.5778 mm			Not Qualified	37748736 bit	4.75 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				.009 Amp		70 ns
TMS4256-15FML	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	18	QCCJ	256	RECTANGULAR	PLASTIC/EPOXY	PAGE	YES	1	NMOS	J BEND	ASYNCHRONOUS		262144 words		SEPARATE	5	5	1	CHIP CARRIER	LDCC18,.33X.53		DRAMs	1.27 mm	70 Cel	3-STATE	256KX1	256K		QUAD	1	R-PQCC-J18	5.5 V	3.53 mm		7.366 mm	Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED		12.446 mm	150 ns
TMS416400P-70DGB	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	24	TSOP2-R	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		4194304 words	YES		5		4	SMALL OUTLINE, THIN PROFILE				1.27 mm	70 Cel		4MX4	4M		DUAL	1	R-PDSO-G24	5.5 V	1.2 mm		7.62 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; BATTERY BACKUP; SELF REFRESH					17.14 mm	70 ns
TM124BBK32S-80	Texas Instruments	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	640 mA	1048576 words	NO	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	1MX32	1M		SINGLE	1	R-XSMA-N72	5.5 V	25.527 mm			Not Qualified	33554432 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				.008 Amp		80 ns
TMS416809-70DZ	Texas Instruments	EDO DRAM	COMMERCIAL	28	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS		2097152 words			5		8	SMALL OUTLINE				1.27 mm	70 Cel	3-STATE	2MX8	2M		DUAL	1	R-PDSO-J28	5.5 V	3.76 mm		10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					18.415 mm	70 ns
TMS426160AP-50DZ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	42	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		110 mA	1048576 words	YES	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ42,.44		DRAMs	1.27 mm	70 Cel	3-STATE	1MX16	1M		DUAL		R-PDSO-J42					Not Qualified	16777216 bit				NOT SPECIFIED	NOT SPECIFIED	.00015 Amp		50 ns
TM4EP72BJN-50	Texas Instruments	EDO DRAM MODULE	COMMERCIAL	168	DIMM	2048	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	NO	1	MOS	NO LEAD	SYNCHRONOUS	2160 mA	4194304 words	NO	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	4MX72	4M	GOLD	DUAL	1	R-PDMA-N168	3.6 V	25.53 mm			Not Qualified	301989888 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH	e4			.018 Amp	133.35 mm	50 ns
TM024HAC4-15L	Texas Instruments	FAST PAGE DRAM MODULE	COMMERCIAL	24		512	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	220 mA	1048576 words		SEPARATE	5	5	4	MICROELECTRONIC ASSEMBLY	SIP24,.2		DRAMs	2.54 mm	70 Cel	3-STATE	1MX4	1M		SINGLE	1	R-XSMA-T24	5.5 V				Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.012 Amp		150 ns
TMS4C1024-80SD	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	20	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	75 mA	1048576 words		SEPARATE	5	5	1	IN-LINE	ZIP20,.1		DRAMs	1.27 mm	70 Cel	3-STATE	1MX1	1M		ZIG-ZAG	1	R-PZIP-T20	5.5 V	10.16 mm		2.8 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.002 Amp		80 ns
TMS46100P-80DGB	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	20	TSOP2-R	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		4194304 words	YES		3.3		1	SMALL OUTLINE, THIN PROFILE				1.27 mm	70 Cel		4MX1	4M		DUAL	1	R-PDSO-G20	3.6 V	1.2 mm		7.62 mm	Not Qualified	4194304 bit	3 V	RAS ONLY; CAS BEFORE RAS; HIDDEN; SELF REFRESH					17.14 mm	80 ns
TMS427400PDGA-70	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	24	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		4194304 words	YES		3.3		4	SMALL OUTLINE, THIN PROFILE				1.27 mm	70 Cel		4MX4	4M		DUAL	1	R-PDSO-G24	3.6 V	1.2 mm		7.62 mm	Not Qualified	16777216 bit	3 V	CAS BEFORE RAS/SELF REFRESH					17.14 mm	70 ns
TMS4C1027-12NL	Texas Instruments	STATIC COLUMN DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	PLASTIC/EPOXY	STATIC COLUMN	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		1048576 words			5		1	IN-LINE				2.54 mm	70 Cel	3-STATE	1MX1	1M		DUAL	1	R-PDIP-T18	5.5 V	5.08 mm		7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					22.48 mm	120 ns
TMS4416-20FPL	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	18	QCCJ	256	RECTANGULAR	PLASTIC/EPOXY	PAGE	YES	1	NMOS	J BEND	ASYNCHRONOUS		16384 words		COMMON	5	5	4	CHIP CARRIER	LDCC18,.33X.53		DRAMs	1.27 mm	70 Cel	3-STATE	16KX4	16K		QUAD	1	R-PQCC-J18	5.5 V	3.5 mm		7.24 mm	Not Qualified	65536 bit	4.5 V	RAS ONLY REFRESH		NOT SPECIFIED	NOT SPECIFIED		10.795 mm	200 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.