COMMERCIAL DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
TM124TBK40S-80	Texas Instruments	FAST PAGE DRAM MODULE	COMMERCIAL	72		1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		1048576 words				5		40	MICROELECTRONIC ASSEMBLY					70 Cel			1MX40	1M			SINGLE	1	R-XSMA-N72	5.5 V				Not Qualified	41943040 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH							80 ns
TMS46400P-80DGB	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	20	TSOP2-R	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		1048576 words		YES		3.3		4	SMALL OUTLINE, THIN PROFILE				1.27 mm	70 Cel			1MX4	1M			DUAL	1	R-PDSO-G20	3.6 V	1.2 mm		7.62 mm	Not Qualified	4194304 bit	3 V	RAS ONLY; CAS BEFORE RAS; HIDDEN; SELF REFRESH						17.14 mm	80 ns
TMS4C1025-15NL	Texas Instruments	NIBBLE MODE DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	PLASTIC/EPOXY	NIBBLE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		1048576 words				5		1	IN-LINE				2.54 mm	70 Cel		3-STATE	1MX1	1M			DUAL	1	R-PDIP-T18	5.5 V	5.08 mm		7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						22.48 mm	150 ns
TMS45165-10DZ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	120 mA	262144 words		NO	COMMON	5	5	16	SMALL OUTLINE	SOJ40,.44		DRAMs	1.27 mm	70 Cel	YES	3-STATE	256KX16	256K			DUAL	1	R-PDSO-J40	5.5 V	3.76 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.001 Amp		26.035 mm	100 ns
TMS417809A-70DGC	Texas Instruments	EDO DRAM	COMMERCIAL	28	TSOP	2048	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		100 mA	2097152 words		NO	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP28,.46		DRAMs	1.27 mm	70 Cel		3-STATE	2MX8	2M			DUAL		R-PDSO-G28					Not Qualified	16777216 bit						.001 Amp			70 ns
TMS44101-80DM	Texas Instruments	NIBBLE MODE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	NIBBLE	YES	1	CMOS	J BEND	ASYNCHRONOUS	75 mA	4194304 words			SEPARATE	5	5	1	SMALL OUTLINE	SOJ20/26,.4		DRAMs	1.27 mm	70 Cel		3-STATE	4MX1	4M			DUAL	1	R-PDSO-J20	5.5 V	3.76 mm		8.89 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.001 Amp		17.145 mm	80 ns
TMS44400PDJ-80	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	20	SOJ		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		1048576 words		YES		5		4	SMALL OUTLINE				1.27 mm	70 Cel			1MX4	1M			DUAL	1	R-PDSO-J20	5.5 V	3.76 mm		7.62 mm	Not Qualified	4194304 bit	4.5 V	CAS BEFORE RAS/SELF REFRESH						17.145 mm	80 ns
TMS416400A-60DGA	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	24	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	80 mA	4194304 words		NO	COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE	TSOP24/26,.36		DRAMs	1.27 mm	70 Cel		3-STATE	4MX4	4M			DUAL	1	R-PDSO-G24	5.5 V	1.2 mm		7.62 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.001 Amp		17.14 mm	60 ns
TMS427800AP-70DGC	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	28	TSOP	2048	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		90 mA	2097152 words		YES	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP28,.46		DRAMs	1.27 mm	70 Cel		3-STATE	2MX8	2M			DUAL		R-PDSO-G28					Not Qualified	16777216 bit				NOT SPECIFIED	NOT SPECIFIED	.00015 Amp			70 ns
SMJ44C256-15HJL	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	20	SOJ	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		262144 words				5		4	SMALL OUTLINE				1.27 mm	70 Cel		3-STATE	256KX4	256K			DUAL	1	R-CDSO-J20	5.5 V	3.48 mm		8.382 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						17.145 mm	150 ns
TMS416169P-80DGE	Texas Instruments	EDO DRAM	COMMERCIAL	44	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS	70 mA	1048576 words		YES	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44/50,.46,32		DRAMs	.8 mm	70 Cel		3-STATE	1MX16	1M			DUAL	1	R-PDSO-G44	5.5 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.0005 Amp		20.95 mm	80 ns
TMS44800P-70DGC	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	28	TSOP2	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		524288 words		YES		5		8	SMALL OUTLINE, THIN PROFILE				1.27 mm	70 Cel			512KX8	512K			DUAL	1	R-PDSO-G28	5.5 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN; SELF REFRESH						18.41 mm	70 ns
TM4256GU8-12L	Texas Instruments	DRAM MODULE	COMMERCIAL	30	SIMM	256	RECTANGULAR	UNSPECIFIED	PAGE	NO	1	NMOS	NO LEAD	ASYNCHRONOUS		262144 words			COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	SIM30		DRAMs	2.54 mm	70 Cel		3-STATE	256KX8	256K			SINGLE	1	R-XSMA-N30	5.5 V	16.51 mm			Not Qualified	2097152 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH							120 ns
SMJ4464-12FVL	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	18	QCCN	256	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	PAGE	YES	1	NMOS	NO LEAD	ASYNCHRONOUS		65536 words				5		4	CHIP CARRIER				1.27 mm	70 Cel		3-STATE	64KX4	64K			QUAD	1	R-CQCC-N18	5.5 V	2.18 mm		7.24 mm	Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						12.32 mm	120 ns
TMS426160-80DZ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	42	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	70 mA	1048576 words		NO	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ42,.44		DRAMs	1.27 mm	70 Cel		3-STATE	1MX16	1M			DUAL	1	R-PDSO-J42	3.6 V	3.76 mm		10.16 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.0005 Amp		27.305 mm	80 ns
TMS44800-80DGC	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	28	TSOP2	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	100 mA	524288 words		NO	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP28,.46		DRAMs	1.27 mm	70 Cel		3-STATE	512KX8	512K			DUAL	1	R-PDSO-G28	5.5 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.001 Amp		18.41 mm	80 ns
TMS45160DZ-70	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	40	SOJ		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	SYNCHRONOUS		262144 words		YES		5		16	SMALL OUTLINE					70 Cel			256KX16	256K			DUAL	1	R-PDSO-J40	5.5 V				Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH							70 ns
TMS426160P-60DGE	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	44	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	90 mA	1048576 words		YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44/50,.46,32		DRAMs	.8 mm	70 Cel		3-STATE	1MX16	1M			DUAL	1	R-PDSO-G44	3.6 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.0002 Amp		20.95 mm	60 ns
TM124MBK36G-80	Texas Instruments	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		300 mA	1048576 words			COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel		3-STATE	1MX36	1M			SINGLE		R-PSMA-N72		25.527 mm			Not Qualified	37748736 bit						.004 Amp			80 ns
TM497EAD9B-10	Texas Instruments	FAST PAGE DRAM MODULE	COMMERCIAL	30		2048	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		4194304 words				5		9	MICROELECTRONIC ASSEMBLY					70 Cel			4MX9	4M			SINGLE	1	R-XSMA-N30	5.5 V				Not Qualified	37748736 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH							100 ns
TMS4C1024-60DN	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	20	SOJ	512	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		95 mA	1048576 words			SEPARATE	5	5	1	SMALL OUTLINE	SOJ20/26,.34		DRAMs	1.27 mm	70 Cel		3-STATE	1MX1	1M			DUAL		R-PDSO-J20					Not Qualified	1048576 bit						.002 Amp			60 ns
TMS4C1024-10N	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	65 mA	1048576 words			SEPARATE	5	5	1	IN-LINE	DIP18,.3		DRAMs	2.54 mm	70 Cel		3-STATE	1MX1	1M			DUAL	1	R-PDIP-T18	5.5 V	5.08 mm		7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.002 Amp		22.48 mm	100 ns
TMS464400-80DZ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	32	SOJ	8192	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		16777216 words				3.3		4	SMALL OUTLINE				1.27 mm	70 Cel		3-STATE	16MX4	16M			DUAL	1	R-PDSO-J32	3.6 V	3.76 mm		10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						20.955 mm	80 ns
TM256KBK36C-6	Texas Instruments	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	512	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	950 mA	262144 words			COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72	18	DRAMs	1.27 mm	70 Cel		3-STATE	256KX36	256K			SINGLE	1	R-XSMA-N72	5.25 V	25.4 mm			Not Qualified	9437184 bit	4.75 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				.02 Amp			60 ns
TMS428160-70DC	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	44	TSOP2	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		1048576 words				3.3		16	SMALL OUTLINE, THIN PROFILE				.8 mm	70 Cel			1MX16	1M			DUAL	1	R-PDSO-G44	3.6 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	3 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH						20.95 mm	70 ns
TM4257GU8-12L	Texas Instruments	DRAM MODULE	COMMERCIAL	30	SIMM	256	RECTANGULAR	UNSPECIFIED	NIBBLE	NO	1	NMOS	NO LEAD	ASYNCHRONOUS		262144 words			COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	SIM30		DRAMs	2.54 mm	70 Cel		3-STATE	256KX8	256K			SINGLE	1	R-XSMA-N30	5.5 V	16.51 mm			Not Qualified	2097152 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH							120 ns
SMJ44C251B-10JDL	Texas Instruments	VIDEO DRAM	COMMERCIAL	28	DIP	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE WITH EDO	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		262144 words				5		4	IN-LINE				2.54 mm	70 Cel		3-STATE	256KX4	256K			DUAL	2	R-CDIP-T28	5.5 V	3.56 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 512 X 4 SAM PORT							100 ns
TM2SR72EPU-12	Texas Instruments	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	MOS	NO LEAD	SYNCHRONOUS	1395 mA	2097152 words			COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		Other Memory ICs	1.27 mm	70 Cel		3-STATE	2MX72	2M	3 V		DUAL	1	R-XDMA-N168	3.6 V		83.3 MHz		Not Qualified	150994944 bit	3 V					.018 Amp			9 ns
TMS44800S-70DZ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	28	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	110 mA	524288 words		YES	COMMON	5	5	8	SMALL OUTLINE	SOJ28,.44		DRAMs	1.27 mm	70 Cel		3-STATE	512KX8	512K			DUAL	1	R-PDSO-J28	5.5 V	3.76 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.0002 Amp		18.415 mm	70 ns
TMS417800A-50DGC	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	28	TSOP	2048	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		130 mA	2097152 words		NO	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP28,.46		DRAMs	1.27 mm	70 Cel		3-STATE	2MX8	2M			DUAL		R-PDSO-G28					Not Qualified	16777216 bit				NOT SPECIFIED	NOT SPECIFIED	.001 Amp			50 ns
TMS427400AP-50DGA	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	24	TSOP2	2048	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	120 mA	4194304 words		YES	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP24/26,.36		DRAMs	1.27 mm	70 Cel		3-STATE	4MX4	4M			DUAL	1	R-PDSO-G24	3.6 V	1.2 mm		7.62 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/BATTERY BACKUP/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.00015 Amp		17.14 mm	50 ns
TM4EP64DJN-70	Texas Instruments	EDO DRAM MODULE	COMMERCIAL	168	DIMM	2048	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	MOS	NO LEAD	ASYNCHRONOUS	736 mA	4194304 words		NO	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel		3-STATE	4MX64	4M			DUAL	1	R-XDMA-N168	3.6 V	25.4 mm			Not Qualified	268435456 bit	3 V	CAS BEFORE RAS REFRESH				.016 Amp			18 ns
TM16TT72JPN-8A	Texas Instruments	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168			RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		16777216 words		YES		3.3		72	MICROELECTRONIC ASSEMBLY					70 Cel			16MX72	16M			DUAL	1	R-XDMA-N168	3.6 V				Not Qualified	1207959552 bit	3 V	AUTO/SELF REFRESH							6 ns
TMS416400PDJ-80	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	24	SOJ		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		4194304 words		YES		5		4	SMALL OUTLINE				1.27 mm	70 Cel			4MX4	4M			DUAL	1	R-PDSO-J24	5.5 V	3.76 mm		7.62 mm	Not Qualified	16777216 bit	4.5 V	CAS BEFORE RAS/SELF REFRESH						17.145 mm	80 ns
TM4164EQ5-20L	Texas Instruments	DRAM MODULE	COMMERCIAL	24		256	RECTANGULAR	UNSPECIFIED	PAGE	NO	1	NMOS	THROUGH-HOLE	ASYNCHRONOUS	148 mA	65536 words			SEPARATE	5		5	MICROELECTRONIC ASSEMBLY	SIP24,.2		DRAMs	2.54 mm	70 Cel		3-STATE	64KX5	64K			SINGLE	1	R-XSMA-T24	5.5 V				Not Qualified	327680 bit	4.5 V	RAS ONLY REFRESH		NOT SPECIFIED	NOT SPECIFIED				200 ns
TM893NBM36A-60	Texas Instruments	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	2048	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	1324 mA	8388608 words		NO	COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel		3-STATE	8MX36	8M			SINGLE	1	R-XSMA-N72	5.5 V	33.147 mm			Not Qualified	301989888 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				.024 Amp			60 ns
TM4EP64DPN-60	Texas Instruments	EDO DRAM MODULE	COMMERCIAL	168	DIMM	2048	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	MOS	NO LEAD	ASYNCHRONOUS	816 mA	4194304 words		NO	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel		3-STATE	4MX64	4M			DUAL	1	R-XDMA-N168	3.6 V	25.4 mm			Not Qualified	268435456 bit	3 V	CAS BEFORE RAS REFRESH				.016 Amp			15 ns
TMS426100P-60DJ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	24	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		16777216 words		YES		3.3		1	SMALL OUTLINE				1.27 mm	70 Cel			16MX1	16M			DUAL	1	R-PDSO-J24	3.6 V	3.76 mm		7.57 mm	Not Qualified	16777216 bit	3 V	RAS ONLY; CAS BEFORE RAS; HIDDEN; SELF REFRESH						17.145 mm	60 ns
TMS426160A-60DGC	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	44	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		90 mA	1048576 words		NO	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44/50,.46,32		DRAMs	.8 mm	70 Cel		3-STATE	1MX16	1M			DUAL		R-PDSO-G44					Not Qualified	16777216 bit				NOT SPECIFIED	NOT SPECIFIED	.001 Amp			60 ns
TM4EP72BPN-60	Texas Instruments	EDO DRAM MODULE	COMMERCIAL	168	DIMM	2048	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	NO	1	MOS	NO LEAD	SYNCHRONOUS	1800 mA	4194304 words		NO	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel		3-STATE	4MX72	4M		GOLD	DUAL	1	R-PDMA-N168	3.6 V	25.53 mm			Not Qualified	301989888 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH	e4			.018 Amp		133.35 mm	60 ns
TMS426400AP-50DJ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	24	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	90 mA	4194304 words		YES	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ24/26,.34		DRAMs	1.27 mm	70 Cel		3-STATE	4MX4	4M			DUAL	1	R-PDSO-J24	3.6 V	3.76 mm		7.62 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/BATTERY BACKUP/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.00015 Amp		17.145 mm	50 ns
TMS416169A-50DGE	Texas Instruments	EDO DRAM	COMMERCIAL	44	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS	130 mA	1048576 words		NO	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44/50,.46,32		DRAMs	.8 mm	70 Cel		3-STATE	1MX16	1M			DUAL	1	R-PDSO-G44	5.5 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.001 Amp		20.95 mm	50 ns
SMJ44C251B-10HJL	Texas Instruments	VIDEO DRAM	COMMERCIAL	28	SOJ	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS		262144 words				5		4	SMALL OUTLINE				1.27 mm	70 Cel		3-STATE	256KX4	256K			DUAL	2	R-CDSO-J28	5.5 V	4.52 mm		10.541 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 512 X 4 SAM PORT						18.542 mm	100 ns
TMS1103NL	Texas Instruments		COMMERCIAL	18	DIP	32	RECTANGULAR	PLASTIC/EPOXY		NO		MOS	THROUGH-HOLE		59 mA	1024 words			SEPARATE			1	IN-LINE	DIP18,.3		Other Memory ICs	2.54 mm	70 Cel			1KX1	1K			DUAL		R-PDIP-T18					Not Qualified	1024 bit				NOT SPECIFIED	NOT SPECIFIED				300 ns
TMS46100-80DJ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	50 mA	4194304 words		NO	SEPARATE	3.3	3.3	1	SMALL OUTLINE	SOJ20/26,.34		DRAMs	1.27 mm	70 Cel		3-STATE	4MX1	4M			DUAL	1	R-PDSO-J20	3.6 V	3.76 mm		7.62 mm	Not Qualified	4194304 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.0003 Amp		17.145 mm	80 ns
TMS626412-12BDGE	Texas Instruments	SYNCHRONOUS DRAM	COMMERCIAL	44	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		110 mA	4194304 words	1,2,4,8		COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		DRAMs	.8 mm	70 Cel		3-STATE	4MX4	4M			DUAL		R-PDSO-G44			83 MHz		Not Qualified	16777216 bit				NOT SPECIFIED	NOT SPECIFIED	.002 Amp	1,2,4,8		8 ns
TMS4464-12FML	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	18	QCCJ	256	RECTANGULAR	PLASTIC/EPOXY	PAGE	YES	1	NMOS	J BEND	ASYNCHRONOUS		65536 words			COMMON	5	5	4	CHIP CARRIER	LDCC18,.33X.53		DRAMs	1.27 mm	70 Cel		3-STATE	64KX4	64K			QUAD	1	R-PQCC-J18	5.5 V	3.53 mm		7.366 mm	Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED			12.446 mm	120 ns
TM4161GW4-15L	Texas Instruments	VIDEO DRAM MODULE	COMMERCIAL	30	SIMM	256	RECTANGULAR	UNSPECIFIED	PAGE	NO	1	NMOS	NO LEAD	ASYNCHRONOUS		65536 words				5		4	MICROELECTRONIC ASSEMBLY	SIM30		Other Memory ICs	2.54 mm	70 Cel		3-STATE	64KX4	64K			SINGLE	2	R-XSMA-N30	5.5 V				Not Qualified	262144 bit	4.5 V	RAS ONLY REFRESH; 256 X 4 SAM PORT							150 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.