COMMERCIAL DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
TMS46100-70DJ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	60 mA	4194304 words		NO	SEPARATE	3.3	3.3	1	SMALL OUTLINE	SOJ20/26,.34		DRAMs	1.27 mm	70 Cel	3-STATE	4MX1	4M			DUAL	1	R-PDSO-J20	3.6 V	3.76 mm		7.62 mm	Not Qualified	4194304 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.0003 Amp		17.145 mm	70 ns
TM4164FL8-12L	Texas Instruments	DRAM MODULE	COMMERCIAL	30		256	RECTANGULAR	UNSPECIFIED	PAGE	NO	1	NMOS	THROUGH-HOLE	ASYNCHRONOUS		65536 words			COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	SIP30,.2		DRAMs	2.54 mm	70 Cel	3-STATE	64KX8	64K			SINGLE	1	R-XSMA-T30	5.5 V				Not Qualified	524288 bit	4.5 V	RAS ONLY REFRESH		NOT SPECIFIED	NOT SPECIFIED				120 ns
TMS417800A-50DZ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	28	SOJ	2048	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	MOS	J BEND	ASYNCHRONOUS	130 mA	2097152 words		NO	COMMON	5	5	8	SMALL OUTLINE	SOJ32,.44		DRAMs	1.27 mm	70 Cel	3-STATE	2MX8	2M			DUAL	1	R-PDSO-J28	5.5 V	3.76 mm		10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.001 Amp		18.415 mm	50 ns
TM4SR72EPN-10	Texas Instruments	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	130 mA	4194304 words		YES	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	32	Other Memory ICs	1.27 mm	70 Cel	3-STATE	4MX72	4M	3 V		DUAL	1	R-XDMA-N168	3.6 V		100 MHz		Not Qualified	301989888 bit	3 V	AUTO/SELF REFRESH				.002 Amp			7.5 ns
TM124FBK32-60	Texas Instruments	EDO DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	MOS	NO LEAD	ASYNCHRONOUS	840 mA	1048576 words		NO	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	1MX32	1M			SINGLE	1	R-XSMA-N72	5.5 V	25.4 mm			Not Qualified	33554432 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				.008 Amp			60 ns
TM16LR64JFN-8A	Texas Instruments	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168			RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		16777216 words		YES		3.3		64	MICROELECTRONIC ASSEMBLY					70 Cel		16MX64	16M			DUAL	1	R-XDMA-N168	3.6 V				Not Qualified	1073741824 bit	3 V	AUTO/SELF REFRESH							6 ns
TMS44C256-10DN	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	20	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	65 mA	262144 words			COMMON	5	5	4	SMALL OUTLINE	SOJ20/26,.34		DRAMs	1.27 mm	70 Cel	3-STATE	256KX4	256K			DUAL	1	R-PDSO-J20	5.5 V	1.83 mm		7.47 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.002 Amp		16.51 mm	100 ns
TMS428160P-70RE	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	42	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		1048576 words		YES		3.3		16	SMALL OUTLINE				1.27 mm	70 Cel		1MX16	1M			DUAL	1	R-PDSO-J42	3.6 V	3.76 mm		10.16 mm	Not Qualified	16777216 bit	3 V	RAS ONLY; CAS BEFORE RAS; HIDDEN; SELF REFRESH						27.38 mm	70 ns
TMS416160P-80RE	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	42	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		1048576 words		YES		5		16	SMALL OUTLINE				1.27 mm	70 Cel		1MX16	1M			DUAL	1	R-PDSO-J42	5.5 V	3.76 mm		10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN; SELF REFRESH						27.38 mm	80 ns
TMS426409A-50DJ	Texas Instruments	EDO DRAM	COMMERCIAL	24	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	SYNCHRONOUS	100 mA	4194304 words		NO	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ24/26,.34		DRAMs	1.27 mm	70 Cel	3-STATE	4MX4	4M			DUAL	1	R-PDSO-J24	3.6 V	3.76 mm		7.62 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.001 Amp		17.145 mm	50 ns
TMS4C1025-10DJL	Texas Instruments	NIBBLE MODE DRAM	COMMERCIAL	20	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	NIBBLE	YES	1	CMOS	J BEND	ASYNCHRONOUS		1048576 words				5		1	SMALL OUTLINE				1.27 mm	70 Cel	3-STATE	1MX1	1M			DUAL	1	R-PDSO-J20	5.5 V	3.76 mm		7.57 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						17.145 mm	100 ns
TM124MBK36B-6	Texas Instruments	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	855 mA	1048576 words			COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72	18	DRAMs	1.27 mm	70 Cel	3-STATE	1MX36	1M			SINGLE	1	R-XSMA-N72	5.25 V	25.5778 mm			Not Qualified	37748736 bit	4.75 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				.009 Amp			60 ns
TMS4027-20JL	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	16	DIP	64	RECTANGULAR	CERAMIC		NO		MOS	THROUGH-HOLE			4096 words			SEPARATE			1	IN-LINE	DIP16,.3		DRAMs	2.54 mm	70 Cel	3-STATE	4KX1	4K			DUAL		R-XDIP-T16					Not Qualified	4096 bit				NOT SPECIFIED	NOT SPECIFIED				200 ns
TM124FBK32U-60	Texas Instruments	EDO DRAM MODULE	COMMERCIAL	72		1024	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		1048576 words		YES		5		32	MICROELECTRONIC ASSEMBLY		16			70 Cel	3-STATE	1MX32	1M			SINGLE	1	R-XSMA-N72	5.5 V				Not Qualified	33554432 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH							60 ns
CMS405-8	Texas Instruments	DRAM CARD	COMMERCIAL	60		1024	UNSPECIFIED	UNSPECIFIED	FAST PAGE	NO	1	CMOS	UNSPECIFIED	ASYNCHRONOUS		2097152 words				5		18	MICROELECTRONIC ASSEMBLY					55 Cel		2MX18	2M			UNSPECIFIED	1	X-XXMA-X60	5.25 V				Not Qualified	37748736 bit	4.75 V								80 ns
TM4256EQ5-10L	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	24		256		PLASTIC/EPOXY		NO		MOS				262144 words			SEPARATE	5	5	5		SIP24,.2		DRAMs	2.54 mm	70 Cel	3-STATE	256KX5	256K			SINGLE							Not Qualified	1310720 bit									100 ns
TM248NBJ36F-70	Texas Instruments	FAST PAGE DRAM MODULE	COMMERCIAL	72		1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		2097152 words				5		36	MICROELECTRONIC ASSEMBLY		16			70 Cel	3-STATE	2MX36	2M			SINGLE	1	R-XSMA-N72	5.5 V				Not Qualified	75497472 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH							70 ns
TMS418160P-80DC	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	44	TSOP2	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		1048576 words		YES		5		16	SMALL OUTLINE, THIN PROFILE				.8 mm	70 Cel		1MX16	1M			DUAL	1	R-PDSO-G44	5.5 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN; SELF REFRESH						20.95 mm	80 ns
TMS44C257-15NL	Texas Instruments	STATIC COLUMN DRAM	COMMERCIAL	20	DIP	512	RECTANGULAR	PLASTIC/EPOXY	STATIC COLUMN	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		262144 words				5		4	IN-LINE				2.54 mm	70 Cel	3-STATE	256KX4	256K			DUAL	1	R-PDIP-T20	5.5 V	5.08 mm		7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						24.325 mm	150 ns
TMS4116-30NL	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	16	DIP	128	RECTANGULAR	PLASTIC/EPOXY		NO		MOS	THROUGH-HOLE			16384 words			SEPARATE		+-5,12	1	IN-LINE	DIP16,.3		DRAMs	2.54 mm	70 Cel	3-STATE	16KX1	16K			DUAL		R-PDIP-T16					Not Qualified	16384 bit				NOT SPECIFIED	NOT SPECIFIED				300 ns
TMS418169P-80DZ	Texas Instruments	EDO DRAM	COMMERCIAL	42	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS	170 mA	1048576 words		YES	COMMON	5	5	16	SMALL OUTLINE	SOJ42,.44		DRAMs	1.27 mm	70 Cel	3-STATE	1MX16	1M			DUAL	1	R-PDSO-J42	5.5 V	3.76 mm		10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.0005 Amp		27.305 mm	80 ns
TMS416169-80DZ	Texas Instruments	EDO DRAM	COMMERCIAL	42	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS	70 mA	1048576 words		NO	COMMON	5	5	16	SMALL OUTLINE	SOJ42,.44		DRAMs	1.27 mm	70 Cel	3-STATE	1MX16	1M			DUAL	1	R-PDSO-J42	5.5 V	3.76 mm		10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.001 Amp		27.305 mm	80 ns
TMS44410-80DM	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	75 mA	1048576 words		NO	COMMON	5	5	4	SMALL OUTLINE	SOJ20/26,.4		DRAMs	1.27 mm	70 Cel	3-STATE	1MX4	1M			DUAL	1	R-PDSO-J20	5.5 V	3.76 mm		8.89 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.001 Amp		17.145 mm	80 ns
TMS416100P-80DGB	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	24	TSOP2-R	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		16777216 words		YES		5		1	SMALL OUTLINE, THIN PROFILE				1.27 mm	70 Cel		16MX1	16M			DUAL	1	R-PDSO-G24	5.5 V	1.2 mm		7.62 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; BATTERY BACKUP; SELF REFRESH						17.14 mm	80 ns
TMS427400-70DJ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	24	SOJ	2048	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	90 mA	4194304 words		NO	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ24/26,.34		DRAMs	1.27 mm	70 Cel	3-STATE	4MX4	4M			DUAL	1	R-PDSO-J24	3.6 V	3.76 mm		7.62 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.0005 Amp		17.145 mm	70 ns
TMS44100-60DGB	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	20	TSOP2-R	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		4194304 words				5		1	SMALL OUTLINE, THIN PROFILE				1.27 mm	70 Cel		4MX1	4M			DUAL	1	R-PDSO-G20	5.5 V	1.2 mm		7.62 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH						17.14 mm	60 ns
TMS418169-70DGE	Texas Instruments	EDO DRAM	COMMERCIAL	44	TSOP2	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS	180 mA	1048576 words		NO	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44/50,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	1MX16	1M			DUAL	1	R-PDSO-G44	5.5 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.001 Amp		20.95 mm	70 ns
TM4256EC4-10L	Texas Instruments	DRAM MODULE	COMMERCIAL	22		256	RECTANGULAR	UNSPECIFIED	PAGE	NO	1	NMOS	THROUGH-HOLE	ASYNCHRONOUS		262144 words			SEPARATE	5	5	4	MICROELECTRONIC ASSEMBLY	SIP22,.2		DRAMs	2.54 mm	70 Cel	3-STATE	256KX4	256K			SINGLE	1	R-XSMA-T22	5.5 V				Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED				100 ns
TM124BBK32U-80	Texas Instruments	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	140 mA	1048576 words		NO	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	1MX32	1M			SINGLE	1	R-XSMA-N72	5.5 V	25.527 mm			Not Qualified	33554432 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				.002 Amp			80 ns
TM4100GBD8-70	Texas Instruments	FAST PAGE DRAM MODULE	COMMERCIAL	30	SIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	680 mA	4194304 words			COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	SIM30		DRAMs	2.54 mm	70 Cel	3-STATE	4MX8	4M			SINGLE	1	R-XSMA-N30	5.5 V	23.114 mm			Not Qualified	33554432 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				.008 Amp			70 ns
TMS426400A-50DGA	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	24	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	90 mA	4194304 words		NO	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP24/26,.36		DRAMs	1.27 mm	70 Cel	3-STATE	4MX4	4M			DUAL	1	R-PDSO-G24	3.6 V	1.2 mm		7.62 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.001 Amp		17.14 mm	50 ns
TMS664814DGE-8A	Texas Instruments	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	MOS	GULL WING	SYNCHRONOUS	165 mA	8388608 words	1,2,4,8	YES	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	8MX8	8M			DUAL	1	R-PDSO-G54	3.6 V	1.2 mm	125 MHz	10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.001 Amp	1,2,4,8	22.22 mm	6 ns
TMS416800A-50DGC	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	28	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		100 mA	2097152 words		NO	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP28,.46		DRAMs	1.27 mm	70 Cel	3-STATE	2MX8	2M			DUAL		R-PDSO-G28					Not Qualified	16777216 bit				NOT SPECIFIED	NOT SPECIFIED	.001 Amp			50 ns
TMS46400-60DJ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	70 mA	1048576 words		NO	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ20/26,.34		DRAMs	1.27 mm	70 Cel	3-STATE	1MX4	1M			DUAL	1	R-PDSO-J20	3.6 V	3.76 mm		7.62 mm	Not Qualified	4194304 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.0003 Amp		17.145 mm	60 ns
TM2EJ64DPN-60	Texas Instruments	EDO DRAM MODULE	COMMERCIAL	144	DIMM	2048	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	MOS	NO LEAD	ASYNCHRONOUS	800 mA	2097152 words		NO	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32		DRAMs	.8 mm	70 Cel	3-STATE	2MX64	2M			DUAL	1	R-XDMA-N144	3.6 V	25.4 mm			Not Qualified	134217728 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				.008 Amp			60 ns
TMS427409AP-70DGA	Texas Instruments	EDO DRAM	COMMERCIAL	24	TSOP2	2048	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS		4194304 words		YES		3.3		4	SMALL OUTLINE, THIN PROFILE				1.27 mm	70 Cel	3-STATE	4MX4	4M			DUAL	1	R-PDSO-G24	3.6 V	1.2 mm		7.62 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/BATTERY BACKUP/SELF REFRESH						17.14 mm	70 ns
TMS464800P-80DGC	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	32	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		8388608 words		YES		3.3		8	SMALL OUTLINE, THIN PROFILE				1.27 mm	70 Cel	3-STATE	8MX8	8M			DUAL	1	R-PDSO-G32	3.6 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH						20.95 mm	80 ns
TMS44C260-80DJ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	24	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	75 mA	262144 words				5	5	4	SMALL OUTLINE	SOJ24/26,.34		DRAMs	1.27 mm	70 Cel	3-STATE	256KX4	256K			DUAL	1	R-PDSO-J24	5.5 V	3.76 mm		7.57 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.002 Amp		17.145 mm	80 ns
TM4EP64CPN-50	Texas Instruments	EDO DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	NO	1	MOS	NO LEAD	SYNCHRONOUS	1600 mA	4194304 words		NO	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	4MX72	4M		GOLD	DUAL	1	R-PDMA-N168	3.6 V	25.53 mm			Not Qualified	301989888 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH	e4			.016 Amp		133.35 mm	50 ns
TMS46100-60DGA	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	20	LSOP	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	70 mA	4194304 words		NO	SEPARATE	3.3	3.3	1	SMALL OUTLINE, LOW PROFILE	TSSOP20/26,.36		DRAMs	1.27 mm	70 Cel	3-STATE	4MX1	4M			DUAL	1	R-PDSO-G20	3.6 V	1.27 mm		7.62 mm	Not Qualified	4194304 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.0003 Amp		17.14 mm	60 ns
TMS417800A-60DZ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	28	SOJ	2048	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	MOS	J BEND	ASYNCHRONOUS	110 mA	2097152 words		NO	COMMON	5	5	8	SMALL OUTLINE	SOJ32,.44		DRAMs	1.27 mm	70 Cel	3-STATE	2MX8	2M			DUAL	1	R-PDSO-J28	5.5 V	3.76 mm		10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.001 Amp		18.415 mm	60 ns
TM8FJ64KPU-60	Texas Instruments	EDO DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	444 mA	8388608 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32		DRAMs	.8 mm	70 Cel	3-STATE	8MX64	8M			DUAL	1	R-XDMA-N144	3.6 V				Not Qualified	536870912 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				.0012 Amp			60 ns
TMS465409-40DGC	Texas Instruments	EDO DRAM	COMMERCIAL	32	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	MOS	GULL WING	ASYNCHRONOUS	160 mA	16777216 words		NO	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP32,.46		DRAMs	1.27 mm	70 Cel	3-STATE	16MX4	16M			DUAL	1	R-PDSO-G32	3.6 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.0005 Amp		20.95 mm	40 ns
TMS418169-70DZ	Texas Instruments	EDO DRAM	COMMERCIAL	42	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS	180 mA	1048576 words		NO	COMMON	5	5	16	SMALL OUTLINE	SOJ42,.44		DRAMs	1.27 mm	70 Cel	3-STATE	1MX16	1M			DUAL	1	R-PDSO-J42	5.5 V	3.76 mm		10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.001 Amp		27.305 mm	70 ns
TMS426100-80DJ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	24	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		16777216 words				3.3		1	SMALL OUTLINE				1.27 mm	70 Cel		16MX1	16M			DUAL	1	R-PDSO-J24	3.6 V	3.76 mm		7.57 mm	Not Qualified	16777216 bit	3 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH						17.145 mm	80 ns
TMS44400-60SD	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	20	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	95 mA	1048576 words		NO	COMMON	5	5	4	IN-LINE	ZIP20,.1		DRAMs	1.27 mm	70 Cel	3-STATE	1MX4	1M			ZIG-ZAG	1	R-PZIP-T20	5.5 V	10.16 mm		2.8 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.001 Amp			60 ns
TMS426169-80DGE	Texas Instruments	EDO DRAM	COMMERCIAL	44	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS	70 mA	1048576 words		NO	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44/50,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	1MX16	1M			DUAL	1	R-PDSO-G44	3.6 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.0005 Amp		20.95 mm	80 ns
TMS45169-70DZ	Texas Instruments	EDO DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		160 mA	262144 words		YES	COMMON	5	5	16	SMALL OUTLINE	SOJ40,.44		DRAMs	1.27 mm	70 Cel	3-STATE	256KX16	256K			DUAL		R-PDSO-J40					Not Qualified	4194304 bit				NOT SPECIFIED	NOT SPECIFIED	.001 Amp			70 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.