Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Refresh Cycles | Package Shape | Package Body Material | Access Mode | Surface Mount | No. of Functions | Technology | Screening Level | Nominal Negative Supply Voltage | Terminal Form | Parallel or Serial | Operating Mode | Maximum Supply Current | No. of Words | Sequential Burst Length | Self Refresh | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Mixed Memory Type | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Terminal Pitch | Maximum Operating Temperature | Reverse Pinout | Output Characteristics | Organization | No. of Words Code | Minimum Standby Voltage | Minimum Operating Temperature | Terminal Finish | Terminal Position | No. of Ports | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Maximum Clock Frequency (fCLK) | Width | Qualification | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Maximum Standby Current | Interleaved Burst Length | Length | Maximum Access Time |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Motorola |
PAGE MODE DRAM |
COMMERCIAL |
16 |
DIP |
256 |
RECTANGULAR |
PLASTIC/EPOXY |
PAGE |
NO |
1 |
NMOS |
THROUGH-HOLE |
ASYNCHRONOUS |
72 mA |
262144 words |
SEPARATE |
5 |
5 |
1 |
IN-LINE |
DIP16,.3 |
DRAMs |
2.54 mm |
70 Cel |
3-STATE |
256KX1 |
256K |
0 Cel |
TIN LEAD |
DUAL |
1 |
R-PDIP-T16 |
5.5 V |
4.19 mm |
7.62 mm |
Not Qualified |
262144 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
e0 |
19.05 mm |
120 ns |
|||||||||||||||||
Motorola |
PAGE MODE DRAM |
COMMERCIAL |
16 |
DIP |
128 |
RECTANGULAR |
CERAMIC |
NO |
MOS |
THROUGH-HOLE |
16384 words |
SEPARATE |
+-5,12 |
1 |
IN-LINE |
DIP16,.3 |
DRAMs |
2.54 mm |
70 Cel |
3-STATE |
16KX1 |
16K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-XDIP-T16 |
Not Qualified |
16384 bit |
e0 |
200 ns |
|||||||||||||||||||||||||||||
Motorola |
FAST PAGE DRAM |
COMMERCIAL |
20 |
SOJ |
512 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE |
YES |
1 |
CMOS |
J BEND |
ASYNCHRONOUS |
70 mA |
1048576 words |
SEPARATE |
5 |
5 |
1 |
SMALL OUTLINE |
SOJ20/26,.34 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
1MX1 |
1M |
0 Cel |
TIN LEAD |
DUAL |
1 |
R-PDSO-J20 |
5.5 V |
3.75 mm |
7.62 mm |
Not Qualified |
1048576 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; TEST MODE |
e0 |
.001 Amp |
17.145 mm |
80 ns |
||||||||||||||||
Motorola |
FAST PAGE DRAM |
COMMERCIAL |
20 |
SOJ |
512 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE |
YES |
1 |
CMOS |
J BEND |
ASYNCHRONOUS |
60 mA |
262144 words |
COMMON |
5 |
5 |
4 |
SMALL OUTLINE |
SOJ20/26,.34 |
DRAMs |
1.27 mm |
70 Cel |
3-STATE |
256KX4 |
256K |
0 Cel |
TIN LEAD |
DUAL |
1 |
R-PDSO-J20 |
5.5 V |
3.75 mm |
7.62 mm |
Not Qualified |
1048576 bit |
4.5 V |
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
e0 |
.001 Amp |
17.145 mm |
100 ns |
||||||||||||||||
Motorola |
FAST PAGE DRAM |
COMMERCIAL |
20 |
DIP |
512 |
RECTANGULAR |
PLASTIC/EPOXY |
FAST PAGE |
NO |
1 |
CMOS |
THROUGH-HOLE |
ASYNCHRONOUS |
80 mA |
262144 words |
COMMON |
5 |
5 |
4 |
IN-LINE |
DIP20,.3 |
DRAMs |
2.54 mm |
70 Cel |
3-STATE |
256KX4 |
256K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
1 |
R-PDIP-T20 |
5.5 V |
4.44 mm |
7.62 mm |
Not Qualified |
1048576 bit |
4.5 V |
RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH |
e0 |
.001 Amp |
24.64 mm |
70 ns |
DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.
DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.
DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.
There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.
One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.