NXP Semiconductors DRAM 32

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Surface Mount	Technology	Terminal Form	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Position	JESD-30 Code	Qualification	Memory Density	Maximum Standby Current	Maximum Access Time
MCM54100AZ70	NXP Semiconductors	FAST PAGE DRAM	COMMERCIAL	20	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	THROUGH-HOLE	100 mA	4194304 words	NO	SEPARATE	5	5	1	IN-LINE	ZIP20,.1	DRAMs	1.27 mm	70 Cel	3-STATE	4MX1	4M	0 Cel	ZIG-ZAG	R-PZIP-T20	Not Qualified	4194304 bit	.001 Amp	70 ns
MCM5L4100AN70	NXP Semiconductors	FAST PAGE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	100 mA	4194304 words	NO	SEPARATE	5	5	1	SMALL OUTLINE	SOJ20/26,.34	DRAMs	1.27 mm	70 Cel	3-STATE	4MX1	4M	0 Cel	DUAL	R-PDSO-J20	Not Qualified	4194304 bit	.0002 Amp	70 ns
MCM54100AT60	NXP Semiconductors	FAST PAGE DRAM	COMMERCIAL	20	TSSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	120 mA	4194304 words	NO	SEPARATE	5	5	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/26,.36	DRAMs	.635 mm	70 Cel	3-STATE	4MX1	4M	0 Cel	DUAL	R-PDSO-G20	Not Qualified	4194304 bit	.001 Amp	60 ns
MCM5L4100AT80R2	NXP Semiconductors	FAST PAGE DRAM	COMMERCIAL	20	TSSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	85 mA	4194304 words	NO	SEPARATE	5	5	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/26,.36	DRAMs	.635 mm	70 Cel	3-STATE	4MX1	4M	0 Cel	DUAL	R-PDSO-G20	Not Qualified	4194304 bit	.0002 Amp	80 ns
MCM54100AT60R2	NXP Semiconductors	FAST PAGE DRAM	COMMERCIAL	20	TSSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	120 mA	4194304 words	NO	SEPARATE	5	5	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/26,.36	DRAMs	.635 mm	70 Cel	3-STATE	4MX1	4M	0 Cel	DUAL	R-PDSO-G20	Not Qualified	4194304 bit	.001 Amp	60 ns
MCM54100AN60	NXP Semiconductors	FAST PAGE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	120 mA	4194304 words	NO	SEPARATE	5	5	1	SMALL OUTLINE	SOJ20/26,.34	DRAMs	1.27 mm	70 Cel	3-STATE	4MX1	4M	0 Cel	DUAL	R-PDSO-J20	Not Qualified	4194304 bit	.001 Amp	60 ns
MCM5L4100AT70R2	NXP Semiconductors	FAST PAGE DRAM	COMMERCIAL	20	TSSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	100 mA	4194304 words	NO	SEPARATE	5	5	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/26,.36	DRAMs	.635 mm	70 Cel	3-STATE	4MX1	4M	0 Cel	DUAL	R-PDSO-G20	Not Qualified	4194304 bit	.0002 Amp	70 ns
MCM54100AT70R2	NXP Semiconductors	FAST PAGE DRAM	COMMERCIAL	20	TSSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	100 mA	4194304 words	NO	SEPARATE	5	5	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/26,.36	DRAMs	.635 mm	70 Cel	3-STATE	4MX1	4M	0 Cel	DUAL	R-PDSO-G20	Not Qualified	4194304 bit	.001 Amp	70 ns
MCM5L4100AN80R2	NXP Semiconductors	FAST PAGE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	85 mA	4194304 words	NO	SEPARATE	5	5	1	SMALL OUTLINE	SOJ20/26,.34	DRAMs	1.27 mm	70 Cel	3-STATE	4MX1	4M	0 Cel	DUAL	R-PDSO-J20	Not Qualified	4194304 bit	.0002 Amp	80 ns
MCM5L4100AT60R2	NXP Semiconductors	FAST PAGE DRAM	COMMERCIAL	20	TSSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	120 mA	4194304 words	NO	SEPARATE	5	5	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/26,.36	DRAMs	.635 mm	70 Cel	3-STATE	4MX1	4M	0 Cel	DUAL	R-PDSO-G20	Not Qualified	4194304 bit	.0002 Amp	60 ns
MCM54100AN70	NXP Semiconductors	FAST PAGE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	100 mA	4194304 words	NO	SEPARATE	5	5	1	SMALL OUTLINE	SOJ20/26,.34	DRAMs	1.27 mm	70 Cel	3-STATE	4MX1	4M	0 Cel	DUAL	R-PDSO-J20	Not Qualified	4194304 bit	.001 Amp	70 ns
MCM54100AT70	NXP Semiconductors	FAST PAGE DRAM	COMMERCIAL	20	TSSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	100 mA	4194304 words	NO	SEPARATE	5	5	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/26,.36	DRAMs	.635 mm	70 Cel	3-STATE	4MX1	4M	0 Cel	DUAL	R-PDSO-G20	Not Qualified	4194304 bit	.001 Amp	70 ns
MCM54100AN80	NXP Semiconductors	FAST PAGE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	85 mA	4194304 words	NO	SEPARATE	5	5	1	SMALL OUTLINE	SOJ20/26,.34	DRAMs	1.27 mm	70 Cel	3-STATE	4MX1	4M	0 Cel	DUAL	R-PDSO-J20	Not Qualified	4194304 bit	.001 Amp	80 ns
MCM5L4100AT80	NXP Semiconductors	FAST PAGE DRAM	COMMERCIAL	20	TSSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	85 mA	4194304 words	NO	SEPARATE	5	5	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/26,.36	DRAMs	.635 mm	70 Cel	3-STATE	4MX1	4M	0 Cel	DUAL	R-PDSO-G20	Not Qualified	4194304 bit	.0002 Amp	80 ns
MCM5L4100AT60	NXP Semiconductors	FAST PAGE DRAM	COMMERCIAL	20	TSSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	120 mA	4194304 words	NO	SEPARATE	5	5	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/26,.36	DRAMs	.635 mm	70 Cel	3-STATE	4MX1	4M	0 Cel	DUAL	R-PDSO-G20	Not Qualified	4194304 bit	.0002 Amp	60 ns
MCM54100AZ80	NXP Semiconductors	FAST PAGE DRAM	COMMERCIAL	20	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	THROUGH-HOLE	85 mA	4194304 words	NO	SEPARATE	5	5	1	IN-LINE	ZIP20,.1	DRAMs	1.27 mm	70 Cel	3-STATE	4MX1	4M	0 Cel	ZIG-ZAG	R-PZIP-T20	Not Qualified	4194304 bit	.001 Amp	80 ns
MCM5L4100AN60R2	NXP Semiconductors	FAST PAGE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	120 mA	4194304 words	NO	SEPARATE	5	5	1	SMALL OUTLINE	SOJ20/26,.34	DRAMs	1.27 mm	70 Cel	3-STATE	4MX1	4M	0 Cel	DUAL	R-PDSO-J20	Not Qualified	4194304 bit	.0002 Amp	60 ns
CBTV4020EE/G,118	NXP Semiconductors	DDR1 DRAM		72			SQUARE	PLASTIC/EPOXY	YES		GULL WING								SMALL OUTLINE									DUAL	S-PDSO-G72	Not Qualified
MCM5L4100AZ80	NXP Semiconductors	FAST PAGE DRAM	COMMERCIAL	20	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	THROUGH-HOLE	85 mA	4194304 words	NO	SEPARATE	5	5	1	IN-LINE	ZIP20,.1	DRAMs	1.27 mm	70 Cel	3-STATE	4MX1	4M	0 Cel	ZIG-ZAG	R-PZIP-T20	Not Qualified	4194304 bit	.0002 Amp	80 ns
MCM54100AT80R2	NXP Semiconductors	FAST PAGE DRAM	COMMERCIAL	20	TSSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	85 mA	4194304 words	NO	SEPARATE	5	5	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/26,.36	DRAMs	.635 mm	70 Cel	3-STATE	4MX1	4M	0 Cel	DUAL	R-PDSO-G20	Not Qualified	4194304 bit	.001 Amp	80 ns
MCM5L4100AZ60	NXP Semiconductors	FAST PAGE DRAM	COMMERCIAL	20	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	THROUGH-HOLE	120 mA	4194304 words	NO	SEPARATE	5	5	1	IN-LINE	ZIP20,.1	DRAMs	1.27 mm	70 Cel	3-STATE	4MX1	4M	0 Cel	ZIG-ZAG	R-PZIP-T20	Not Qualified	4194304 bit	.0002 Amp	60 ns
MCM54100AN80R2	NXP Semiconductors	FAST PAGE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	85 mA	4194304 words	NO	SEPARATE	5	5	1	SMALL OUTLINE	SOJ20/26,.34	DRAMs	1.27 mm	70 Cel	3-STATE	4MX1	4M	0 Cel	DUAL	R-PDSO-J20	Not Qualified	4194304 bit	.001 Amp	80 ns
MCM54100AN70R2	NXP Semiconductors	FAST PAGE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	100 mA	4194304 words	NO	SEPARATE	5	5	1	SMALL OUTLINE	SOJ20/26,.34	DRAMs	1.27 mm	70 Cel	3-STATE	4MX1	4M	0 Cel	DUAL	R-PDSO-J20	Not Qualified	4194304 bit	.001 Amp	70 ns
MCM54100AZ60	NXP Semiconductors	FAST PAGE DRAM	COMMERCIAL	20	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	THROUGH-HOLE	120 mA	4194304 words	NO	SEPARATE	5	5	1	IN-LINE	ZIP20,.1	DRAMs	1.27 mm	70 Cel	3-STATE	4MX1	4M	0 Cel	ZIG-ZAG	R-PZIP-T20	Not Qualified	4194304 bit	.001 Amp	60 ns
MCM5L4100AT70	NXP Semiconductors	FAST PAGE DRAM	COMMERCIAL	20	TSSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	100 mA	4194304 words	NO	SEPARATE	5	5	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/26,.36	DRAMs	.635 mm	70 Cel	3-STATE	4MX1	4M	0 Cel	DUAL	R-PDSO-G20	Not Qualified	4194304 bit	.0002 Amp	70 ns
MCM54100AN60R2	NXP Semiconductors	FAST PAGE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	120 mA	4194304 words	NO	SEPARATE	5	5	1	SMALL OUTLINE	SOJ20/26,.34	DRAMs	1.27 mm	70 Cel	3-STATE	4MX1	4M	0 Cel	DUAL	R-PDSO-J20	Not Qualified	4194304 bit	.001 Amp	60 ns
MCM54100AT80	NXP Semiconductors	FAST PAGE DRAM	COMMERCIAL	20	TSSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	85 mA	4194304 words	NO	SEPARATE	5	5	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/26,.36	DRAMs	.635 mm	70 Cel	3-STATE	4MX1	4M	0 Cel	DUAL	R-PDSO-G20	Not Qualified	4194304 bit	.001 Amp	80 ns
MCM5L4100AZ70	NXP Semiconductors	FAST PAGE DRAM	COMMERCIAL	20	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	THROUGH-HOLE	100 mA	4194304 words	NO	SEPARATE	5	5	1	IN-LINE	ZIP20,.1	DRAMs	1.27 mm	70 Cel	3-STATE	4MX1	4M	0 Cel	ZIG-ZAG	R-PZIP-T20	Not Qualified	4194304 bit	.0002 Amp	70 ns
CBTV4020EE/G	NXP Semiconductors	DDR1 DRAM		72			SQUARE	PLASTIC/EPOXY	YES		GULL WING								SMALL OUTLINE									DUAL	S-PDSO-G72	Not Qualified
MCM5L4100AN70R2	NXP Semiconductors	FAST PAGE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	100 mA	4194304 words	NO	SEPARATE	5	5	1	SMALL OUTLINE	SOJ20/26,.34	DRAMs	1.27 mm	70 Cel	3-STATE	4MX1	4M	0 Cel	DUAL	R-PDSO-J20	Not Qualified	4194304 bit	.0002 Amp	70 ns
MCM5L4100AN60	NXP Semiconductors	FAST PAGE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	120 mA	4194304 words	NO	SEPARATE	5	5	1	SMALL OUTLINE	SOJ20/26,.34	DRAMs	1.27 mm	70 Cel	3-STATE	4MX1	4M	0 Cel	DUAL	R-PDSO-J20	Not Qualified	4194304 bit	.0002 Amp	60 ns
MCM5L4100AN80	NXP Semiconductors	FAST PAGE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	85 mA	4194304 words	NO	SEPARATE	5	5	1	SMALL OUTLINE	SOJ20/26,.34	DRAMs	1.27 mm	70 Cel	3-STATE	4MX1	4M	0 Cel	DUAL	R-PDSO-J20	Not Qualified	4194304 bit	.0002 Amp	80 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.