Onsemi DRAM 37

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Refresh Cycles Package Shape Package Body Material Access Mode Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Sequential Burst Length Self Refresh Input/Output Type Nominal Supply Voltage / Vsup (V) Mixed Memory Type Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Standby Voltage Minimum Operating Temperature Terminal Finish Terminal Position No. of Ports JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Maximum Clock Frequency (fCLK) Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Standby Current Interleaved Burst Length Length Maximum Access Time

LC338128M-80

Onsemi

COMMERCIAL

32

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

70 mA

131072 words

COMMON

5

5

8

SMALL OUTLINE

SOP32,.56

Other Memory ICs

1.27 mm

70 Cel

3-STATE

128KX8

128K

4.5 V

0 Cel

DUAL

R-PDSO-G32

Not Qualified

1048576 bit

.001 Amp

80 ns

LC382161AT-15

Onsemi

SYNCHRONOUS DRAM

COMMERCIAL

50

TSOP

512

RECTANGULAR

PLASTIC/EPOXY

YES

GULL WING

120 mA

131072 words

1,2,4,8,FP

COMMON

3.3

3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP50,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

128KX16

128K

0 Cel

DUAL

R-PDSO-G50

66 MHz

Not Qualified

2097152 bit

.002 Amp

1,2,4,8

LC321667BJ-80

Onsemi

EDO DRAM

COMMERCIAL

40

SOJ

256

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

115 mA

65536 words

NO

COMMON

5

5

16

SMALL OUTLINE

SOJ40,.44

DRAMs

1.27 mm

70 Cel

3-STATE

64KX16

64K

0 Cel

DUAL

R-PDSO-J40

Not Qualified

1048576 bit

.001 Amp

80 ns

LC321664BT-80

Onsemi

FAST PAGE DRAM

COMMERCIAL

40

TSOP

256

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

115 mA

65536 words

NO

COMMON

5

5

16

SMALL OUTLINE, THIN PROFILE

TSOP40/44,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

64KX16

64K

0 Cel

DUAL

R-PDSO-G40

Not Qualified

1048576 bit

.001 Amp

80 ns

PCS2P2310ANZG-28-AT

Onsemi

STATIC COLUMN DRAM

28

RECTANGULAR

PLASTIC/EPOXY

YES

GULL WING

SMALL OUTLINE

DUAL

R-PDSO-G28

Not Qualified

LC322270T-80

Onsemi

FAST PAGE DRAM

COMMERCIAL

40

TSOP

512

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

115 mA

131072 words

COMMON

5

5

16

SMALL OUTLINE, THIN PROFILE

TSOP40/44,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

128KX16

128K

0 Cel

DUAL

R-PDSO-G40

Not Qualified

2097152 bit

.001 Amp

80 ns

LC338128PL-70

Onsemi

COMMERCIAL

32

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

THROUGH-HOLE

80 mA

131072 words

COMMON

5

5

8

IN-LINE

DIP32,.6

Other Memory ICs

2.54 mm

70 Cel

3-STATE

128KX8

128K

4.5 V

0 Cel

DUAL

R-PDIP-T32

Not Qualified

1048576 bit

.0001 Amp

70 ns

LC32464P-80

Onsemi

FAST PAGE DRAM

COMMERCIAL

18

DIP

256

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

THROUGH-HOLE

70 mA

65536 words

COMMON

5

5

4

IN-LINE

DIP18,.3

DRAMs

2.54 mm

70 Cel

3-STATE

64KX4

64K

0 Cel

DUAL

R-PDIP-T18

Not Qualified

262144 bit

.001 Amp

80 ns

LC321664BM-70

Onsemi

FAST PAGE DRAM

COMMERCIAL

40

SOP

256

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

125 mA

65536 words

NO

COMMON

5

5

16

SMALL OUTLINE

SOP40,.56

DRAMs

1.27 mm

70 Cel

3-STATE

64KX16

64K

0 Cel

DUAL

R-PDSO-G40

Not Qualified

1048576 bit

.001 Amp

70 ns

LC338128PL-80

Onsemi

COMMERCIAL

32

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

THROUGH-HOLE

70 mA

131072 words

COMMON

5

5

8

IN-LINE

DIP32,.6

Other Memory ICs

2.54 mm

70 Cel

3-STATE

128KX8

128K

4.5 V

0 Cel

DUAL

R-PDIP-T32

Not Qualified

1048576 bit

.0001 Amp

80 ns

LC338128P-10

Onsemi

COMMERCIAL

32

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

THROUGH-HOLE

60 mA

131072 words

COMMON

5

5

8

IN-LINE

DIP32,.6

Other Memory ICs

2.54 mm

70 Cel

3-STATE

128KX8

128K

4.5 V

0 Cel

DUAL

R-PDIP-T32

Not Qualified

1048576 bit

.001 Amp

100 ns

LC321667BM-70

Onsemi

EDO DRAM

COMMERCIAL

40

SOP

256

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

125 mA

65536 words

NO

COMMON

5

5

16

SMALL OUTLINE

SOP40,.56

DRAMs

1.27 mm

70 Cel

3-STATE

64KX16

64K

0 Cel

DUAL

R-PDSO-G40

Not Qualified

1048576 bit

.001 Amp

70 ns

LC338128P-80

Onsemi

COMMERCIAL

32

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

THROUGH-HOLE

70 mA

131072 words

COMMON

5

5

8

IN-LINE

DIP32,.6

Other Memory ICs

2.54 mm

70 Cel

3-STATE

128KX8

128K

4.5 V

0 Cel

DUAL

R-PDIP-T32

Not Qualified

1048576 bit

.001 Amp

80 ns

LC321667BT-80

Onsemi

EDO DRAM

COMMERCIAL

40

TSOP

256

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

115 mA

65536 words

NO

COMMON

5

5

16

SMALL OUTLINE, THIN PROFILE

TSOP40/44,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

64KX16

64K

0 Cel

DUAL

R-PDSO-G40

Not Qualified

1048576 bit

.001 Amp

80 ns

LC338128M-70

Onsemi

COMMERCIAL

32

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

80 mA

131072 words

COMMON

5

5

8

SMALL OUTLINE

SOP32,.56

Other Memory ICs

1.27 mm

70 Cel

3-STATE

128KX8

128K

4.5 V

0 Cel

DUAL

R-PDSO-G32

Not Qualified

1048576 bit

.001 Amp

70 ns

LC321664BJ-70

Onsemi

FAST PAGE DRAM

COMMERCIAL

40

SOJ

256

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

125 mA

65536 words

NO

COMMON

5

5

16

SMALL OUTLINE

SOJ40,.44

DRAMs

1.27 mm

70 Cel

3-STATE

64KX16

64K

0 Cel

DUAL

R-PDSO-J40

Not Qualified

1048576 bit

.001 Amp

70 ns

LC338128P-70

Onsemi

COMMERCIAL

32

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

THROUGH-HOLE

80 mA

131072 words

COMMON

5

5

8

IN-LINE

DIP32,.6

Other Memory ICs

2.54 mm

70 Cel

3-STATE

128KX8

128K

4.5 V

0 Cel

DUAL

R-PDIP-T32

Not Qualified

1048576 bit

.001 Amp

70 ns

LC338128PL-10

Onsemi

COMMERCIAL

32

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

THROUGH-HOLE

60 mA

131072 words

COMMON

5

5

8

IN-LINE

DIP32,.6

Other Memory ICs

2.54 mm

70 Cel

3-STATE

128KX8

128K

4.5 V

0 Cel

DUAL

R-PDIP-T32

Not Qualified

1048576 bit

.0001 Amp

100 ns

LC338128M-10

Onsemi

COMMERCIAL

32

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

60 mA

131072 words

COMMON

5

5

8

SMALL OUTLINE

SOP32,.56

Other Memory ICs

1.27 mm

70 Cel

3-STATE

128KX8

128K

4.5 V

0 Cel

DUAL

R-PDSO-G32

Not Qualified

1048576 bit

.001 Amp

100 ns

LC321667BJ-70

Onsemi

EDO DRAM

COMMERCIAL

40

SOJ

256

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

125 mA

65536 words

NO

COMMON

5

5

16

SMALL OUTLINE

SOJ40,.44

DRAMs

1.27 mm

70 Cel

3-STATE

64KX16

64K

0 Cel

DUAL

R-PDSO-J40

Not Qualified

1048576 bit

.001 Amp

70 ns

PCS2I2310ANZG-28-AT

Onsemi

STATIC COLUMN DRAM

28

RECTANGULAR

PLASTIC/EPOXY

YES

GULL WING

SMALL OUTLINE

DUAL

R-PDSO-G28

Not Qualified

P2I2310ANZG-28AR

Onsemi

STATIC COLUMN DRAM

PCS2P2310ANZG-28-AR

Onsemi

STATIC COLUMN DRAM

28

RECTANGULAR

PLASTIC/EPOXY

YES

GULL WING

SMALL OUTLINE

DUAL

R-PDSO-G28

Not Qualified

LC322270J-70

Onsemi

FAST PAGE DRAM

COMMERCIAL

40

SOJ

512

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

125 mA

131072 words

COMMON

5

5

16

SMALL OUTLINE

SOJ40,.44

DRAMs

1.27 mm

70 Cel

3-STATE

128KX16

128K

0 Cel

DUAL

R-PDSO-J40

Not Qualified

2097152 bit

.001 Amp

70 ns

LC321664BT-70

Onsemi

FAST PAGE DRAM

COMMERCIAL

40

TSOP

256

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

125 mA

65536 words

NO

COMMON

5

5

16

SMALL OUTLINE, THIN PROFILE

TSOP40/44,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

64KX16

64K

0 Cel

DUAL

R-PDSO-G40

Not Qualified

1048576 bit

.001 Amp

70 ns

LC382161AT-10

Onsemi

SYNCHRONOUS DRAM

COMMERCIAL

50

TSOP

512

RECTANGULAR

PLASTIC/EPOXY

YES

GULL WING

160 mA

131072 words

1,2,4,8,FP

COMMON

3.3

3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP50,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

128KX16

128K

0 Cel

DUAL

R-PDSO-G50

100 MHz

Not Qualified

2097152 bit

.002 Amp

1,2,4,8

LC338128ML-10

Onsemi

COMMERCIAL

32

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

60 mA

131072 words

COMMON

5

5

8

SMALL OUTLINE

SOP32,.56

Other Memory ICs

1.27 mm

70 Cel

3-STATE

128KX8

128K

4.5 V

0 Cel

DUAL

R-PDSO-G32

Not Qualified

1048576 bit

.0001 Amp

100 ns

LC32464M-80

Onsemi

FAST PAGE DRAM

COMMERCIAL

24

SOP

256

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

70 mA

65536 words

COMMON

5

5

4

SMALL OUTLINE

SOP24,.4

DRAMs

1.27 mm

70 Cel

3-STATE

64KX4

64K

0 Cel

DUAL

R-PDSO-G24

Not Qualified

262144 bit

.001 Amp

80 ns

LC382161T-17

Onsemi

SYNCHRONOUS DRAM

COMMERCIAL

50

TSOP

512

RECTANGULAR

PLASTIC/EPOXY

YES

GULL WING

90 mA

131072 words

1,2,4,8,FP

COMMON

3.3

3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP50,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

128KX16

128K

0 Cel

DUAL

R-PDSO-G50

29 MHz

Not Qualified

2097152 bit

.002 Amp

2,4,8

17 ns

LC338128ML-70

Onsemi

COMMERCIAL

32

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

80 mA

131072 words

COMMON

5

5

8

SMALL OUTLINE

SOP32,.56

Other Memory ICs

1.27 mm

70 Cel

3-STATE

128KX8

128K

4.5 V

0 Cel

DUAL

R-PDSO-G32

Not Qualified

1048576 bit

.0001 Amp

70 ns

LC321664BM-80

Onsemi

FAST PAGE DRAM

COMMERCIAL

40

SOP

256

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

115 mA

65536 words

NO

COMMON

5

5

16

SMALL OUTLINE

SOP40,.56

DRAMs

1.27 mm

70 Cel

3-STATE

64KX16

64K

0 Cel

DUAL

R-PDSO-G40

Not Qualified

1048576 bit

.001 Amp

80 ns

LC321667BM-80

Onsemi

EDO DRAM

COMMERCIAL

40

SOP

256

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

115 mA

65536 words

NO

COMMON

5

5

16

SMALL OUTLINE

SOP40,.56

DRAMs

1.27 mm

70 Cel

3-STATE

64KX16

64K

0 Cel

DUAL

R-PDSO-G40

Not Qualified

1048576 bit

.001 Amp

80 ns

LC338128ML-80

Onsemi

COMMERCIAL

32

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

70 mA

131072 words

COMMON

5

5

8

SMALL OUTLINE

SOP32,.56

Other Memory ICs

1.27 mm

70 Cel

3-STATE

128KX8

128K

4.5 V

0 Cel

DUAL

R-PDSO-G32

Not Qualified

1048576 bit

.0001 Amp

80 ns

LC321667BT-70

Onsemi

EDO DRAM

COMMERCIAL

40

TSOP

256

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

125 mA

65536 words

NO

COMMON

5

5

16

SMALL OUTLINE, THIN PROFILE

TSOP40/44,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

64KX16

64K

0 Cel

DUAL

R-PDSO-G40

Not Qualified

1048576 bit

.001 Amp

70 ns

LC382161AT-12

Onsemi

SYNCHRONOUS DRAM

COMMERCIAL

50

TSOP

512

RECTANGULAR

PLASTIC/EPOXY

YES

GULL WING

140 mA

131072 words

1,2,4,8,FP

COMMON

3.3

3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP50,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

128KX16

128K

0 Cel

DUAL

R-PDSO-G50

83 MHz

Not Qualified

2097152 bit

.002 Amp

1,2,4,8

LC321664BJ-80

Onsemi

FAST PAGE DRAM

COMMERCIAL

40

SOJ

256

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

115 mA

65536 words

NO

COMMON

5

5

16

SMALL OUTLINE

SOJ40,.44

DRAMs

1.27 mm

70 Cel

3-STATE

64KX16

64K

0 Cel

DUAL

R-PDSO-J40

Not Qualified

1048576 bit

.001 Amp

80 ns

LC322270T-70

Onsemi

FAST PAGE DRAM

COMMERCIAL

40

TSOP

512

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

125 mA

131072 words

COMMON

5

5

16

SMALL OUTLINE, THIN PROFILE

TSOP40/44,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

128KX16

128K

0 Cel

DUAL

R-PDSO-G40

Not Qualified

2097152 bit

.001 Amp

70 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.