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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
AS4C16M16SA-6BINTR	Alliance Memory	SYNCHRONOUS DRAM	INDUSTRIAL	54	TFBGA	8192	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	60 mA	16777216 words	1,2,4,8,FP	YES	COMMON	3.3		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA54,9X9,32		.8 mm	85 Cel		16MX16	16M	3 V	-40 Cel		BOTTOM	1	S-PBGA-B54	3	3.6 V	1.2 mm	166 MHz	8 mm		268435456 bit	3 V	AUTO/SELF REFRESH				.025 Amp	1,2,4,8	8 mm	5 ns
AS4C4M16SA-6TINTR	Alliance Memory	SYNCHRONOUS DRAM	INDUSTRIAL	54	TFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		4194304 words		YES		3.3		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		4MX16	4M		-40 Cel	Tin (Sn)	BOTTOM	1	S-PBGA-B54	3	3.6 V	1.2 mm		8 mm		67108864 bit	3 V	AUTO/SELF REFRESH	e3					8 mm	5.4 ns
AS4C64M16D2A-25BINTR	Alliance Memory	DDR2 DRAM	INDUSTRIAL	84	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	170 mA	67108864 words	4,8	YES	COMMON	1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA84,9X15,32		.8 mm	95 Cel	3-STATE	64MX16	64M	1.7 V	-40 Cel		BOTTOM	1	R-PBGA-B84	3	1.9 V	1.2 mm	400 MHz	8 mm		1073741824 bit	1.7 V	AUTO/SELF REFRESH				.01 Amp	4,8	12.5 mm	.4 ns
H5TQ4G63AFR-PBC	Sk Hynix	DDR3 DRAM	OTHER	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	220 mA	268435456 words	4,8	YES	COMMON	1.5	1.5	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	DRAMs	.8 mm	85 Cel	3-STATE	256MX16	256M		0 Cel		BOTTOM	1	R-PBGA-B96		1.575 V	1.2 mm	800 MHz	9 mm	Not Qualified	4294967296 bit	1.425 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.017 Amp	4,8	13 mm	.225 ns
H5TQ4G63AFR-RDC	Sk Hynix	DDR3 DRAM	OTHER	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	225 mA	268435456 words	4,8	YES	COMMON	1.5	1.5	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	DRAMs	.8 mm	85 Cel	3-STATE	256MX16	256M		0 Cel		BOTTOM	1	R-PBGA-B96		1.575 V	1.2 mm	933 MHz	9 mm	Not Qualified	4294967296 bit	1.425 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.017 Amp	4,8	13 mm	.195 ns
IS42S16100H-7BL	Integrated Silicon Solution	SYNCHRONOUS DRAM	COMMERCIAL	60	TFBGA	2048	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	60 mA	1048576 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA60,7X15,25	DRAMs	.65 mm	70 Cel	3-STATE	1MX16	1M		0 Cel		BOTTOM	1	R-PBGA-B60		3.6 V	1.2 mm	143 MHz	6.4 mm	Not Qualified	16777216 bit	3 V	PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH				.002 Amp	1,2,4,8	10.1 mm	5.5 ns
IS42S32800G-6BLI	Integrated Silicon Solution	SYNCHRONOUS DRAM	INDUSTRIAL	90	TFBGA	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	350 mA	8388608 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	8MX32	8M		-40 Cel		BOTTOM	1	R-PBGA-B90		3.6 V	1.2 mm	166 MHz	8 mm	Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH				.003 Amp	1,2,4,8	13 mm	5.4 ns
IS42S83200G-7BLI-TR	Integrated Silicon Solution	SYNCHRONOUS DRAM	INDUSTRIAL	54	FBGA	8192	SQUARE	PLASTIC/EPOXY		YES		CMOS		BALL		130 mA	33554432 words	1,2,4,8,FP		COMMON	3.3	3.3	8	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	85 Cel	3-STATE	32MX8	32M		-40 Cel		BOTTOM		S-PBGA-B54				143 MHz		Not Qualified	268435456 bit						.004 Amp	1,2,4,8		5.4 ns
IS42S86400D-7TL	Integrated Silicon Solution	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS	220 mA	67108864 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	64MX8	64M		0 Cel		DUAL	1	R-PDSO-G54		3.6 V	1.2 mm	143 MHz	10.16 mm	Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH				.004 Amp	1,2,4,8	22.22 mm	5.4 ns
IS43LD16640C-25BLI-TR	Integrated Silicon Solution	LPDDR2 DRAM	INDUSTRIAL	134	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		YES		1.2		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.65 mm	85 Cel		64MX16	64M		-40 Cel		BOTTOM	1	R-PBGA-B134		1.3 V	1.1 mm		10 mm		1073741824 bit	1.14 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM		NOT SPECIFIED	NOT SPECIFIED			11.5 mm
IS43QR16256B-083RBL	Integrated Silicon Solution	DDR4 DRAM	OTHER	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	375 mA	268435456 words	8	YES	COMMON	1.2		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	95 Cel	3-STATE	256MX16	256M	1.14 V	0 Cel		BOTTOM	1	R-PBGA-B96		1.26 V	1.2 mm	1200.48 MHz	7.5 mm		4294967296 bit	1.14 V	AUTO/SELF REFRESH			260	.058 Amp	8	13.5 mm
M393A4K40BB1-CRC	Samsung	DDR DRAM MODULE	OTHER	288	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		4294967296 words		YES	COMMON	1.2	1.2	72	MICROELECTRONIC ASSEMBLY	DIMM288,33	Other Memory ICs	.85 mm	85 Cel	3-STATE	4GX72	4G		0 Cel		DUAL	1	R-XDMA-N288		1.26 V	31.4 mm	1200 MHz	3.9 mm	Not Qualified	309237645312 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX		NOT SPECIFIED	NOT SPECIFIED			133.35 mm	.175 ns
MT16KTF1G64HZ-1G9P1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.35		64	MICROELECTRONIC ASSEMBLY				70 Cel		1GX64	1G		0 Cel		ZIG-ZAG	1	R-XZMA-N204		1.45 V	30.15 mm		3.8 mm		68719476736 bit	1.283 V	SELF REFRESH; WD-MAX		30	260			67.6 mm
MT40A2G8AG-062EAUT:F	Micron Technology	DDR4 DRAM		78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		2147483648 words	8	YES	COMMON	1.2		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	125 Cel		2GX8	2G		-40 Cel		BOTTOM	1	R-PBGA-B78		1.26 V	1.2 mm	1600 MHz	9 mm		17179869184 bit	1.14 V	AUTO/SELF REFRESH					8	11 mm
MT40A512M8RH-083E:B	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words		YES		1.2		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		512MX8	512M		0 Cel		BOTTOM	1	R-PBGA-B78		1.26 V	1.2 mm		9 mm		4294967296 bit	1.14 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			10.5 mm
MT40A512M8SA-062E:F	Micron Technology	DDR4 DRAM																																TIN SILVER COPPER													e1	30	260
MT46H32M16LFBF-6IT:BTR	Micron Technology	DDR1 DRAM	INDUSTRIAL	60	VFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		33554432 words		YES		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel		32MX16	32M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60		1.95 V	1 mm		8 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e1					9 mm	6 ns
MT46H32M16LFBF-6IT:C	Micron Technology	DDR1 DRAM	INDUSTRIAL	60	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	110 mA	33554432 words	2,4,8,16	YES	COMMON	1.8	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA60,9X10,32	DRAMs	.8 mm	85 Cel	3-STATE	32MX16	32M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60		1.95 V	1 mm	166 MHz	8 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e1	30	260	.00001 Amp	2,4,8,16	9 mm	5 ns
MT46H32M16LFBF-6IT:CTR	Micron Technology	DDR1 DRAM	INDUSTRIAL	60	VFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		33554432 words		YES		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel		32MX16	32M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60		1.95 V	1 mm		8 mm		536870912 bit	1.7 V	AUTO/SELF REFRESH	e1					9 mm	5 ns
MT48LC16M16A2P-7E:GTR	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS		16777216 words		YES		3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel		16MX16	16M		0 Cel	Matte Tin (Sn)	DUAL	1	R-PDSO-G54		3.6 V	1.2 mm		10.16 mm		268435456 bit	3 V	AUTO/SELF REFRESH	e3	30	260			22.22 mm	5.4 ns
MT48LC32M16A2TG-75:CTR	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS		33554432 words		YES		3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel		32MX16	32M		0 Cel	TIN LEAD	DUAL	1	R-PDSO-G54		3.6 V	1.2 mm		10.16 mm		536870912 bit	3 V	AUTO/SELF REFRESH	e0	30	260			22.22 mm	5.4 ns
MT48LC4M32B2F5-7IT:G	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	90	VFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		4194304 words		YES		3.3		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel		4MX32	4M		-40 Cel	TIN LEAD SILVER	BOTTOM	1	R-PBGA-B90		3.6 V	1 mm		8 mm		134217728 bit	3 V	AUTO/SELF REFRESH	e0	30	235			13 mm	5.5 ns
MT48LC8M16A2P-6AAAT:LTR	Micron Technology	SYNCHRONOUS DRAM																																MATTE TIN														30	260
MT53E128M32D2DS-046AUT:A	Micron Technology	LPDDR4 DRAM	AUTOMOTIVE	200	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		134217728 words		YES	COMMON	1.1		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25		.65 mm	125 Cel		128MX32	128M	1.06 V	-40 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	.8 mm	2133 MHz	10 mm		4294967296 bit	1.06 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM		NOT SPECIFIED	NOT SPECIFIED			14.5 mm
MT8HTF12864HDZ-800M1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		134217728 words		YES		1.8		64	MICROELECTRONIC ASSEMBLY				70 Cel		128MX64	128M		0 Cel		DUAL	1	R-XDMA-N200		1.9 V	30.15 mm		3.8 mm		8589934592 bit	1.7 V	PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH; WD-MAX						67.6 mm
MT8KTF51264HZ-1G9P1	Micron Technology	DDR3L DRAM MODULE	COMMERCIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		536870912 words		YES		1.35		64	MICROELECTRONIC ASSEMBLY			.45 mm	70 Cel		512MX64	512M		0 Cel		ZIG-ZAG	1	R-XZMA-N204		1.45 V	30.15 mm		3.8 mm		34359738368 bit	1.283 V	SELF REFRESH; IT ALSO REQUIRES 1.5V NOM; WD-MAX		30	260			67.6 mm
W3H32M64E-533SBI	Microsemi	DDR2 DRAM	INDUSTRIAL	208	BGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		33554432 words		YES		1.8		64	GRID ARRAY				85 Cel		32MX64	32M		-40 Cel		BOTTOM	1	R-PBGA-B208		1.9 V				Not Qualified	2147483648 bit	1.7 V	AUTO/SELF REFRESH		30	225				.65 ns
W631GU6NB-09	Winbond Electronics	DDR3L DRAM	OTHER	96	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	270 mA	67108864 words	8	YES	COMMON	1.35		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	95 Cel	3-STATE	64MX16	64M		0 Cel		BOTTOM	1	R-PBGA-B96		1.45 V	1 mm	1066 MHz	7.5 mm		1073741824 bit	1.283 V					.06 Amp	8	13 mm	20 ns
W631GU6NB-12	Winbond Electronics	DDR3L DRAM	OTHER	96	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	220 mA	67108864 words	8	YES	COMMON	1.35		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	95 Cel	3-STATE	64MX16	64M		0 Cel		BOTTOM	1	R-PBGA-B96		1.45 V	1 mm	800 MHz	7.5 mm		1073741824 bit	1.283 V					.055 Amp	8	13 mm	20 ns
W631GU6NB12I	Winbond Electronics	DDR3L DRAM	INDUSTRIAL	96	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	220 mA	67108864 words	8	YES	COMMON	1.35		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	95 Cel	3-STATE	64MX16	64M		-40 Cel		BOTTOM	1	R-PBGA-B96		1.45 V	1 mm	800 MHz	7.5 mm		1073741824 bit	1.283 V					.055 Amp	8	13 mm	20 ns
W9825G6JB-6I	Winbond Electronics	SYNCHRONOUS DRAM	INDUSTRIAL	54	TFBGA	8192	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	80 mA	16777216 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX16	16M		-40 Cel		BOTTOM	1	S-PBGA-B54		3.6 V	1.2 mm	166 MHz	8 mm	Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.002 Amp	1,2,4,8	8 mm	5 ns
AS4C256M16D3C-12BCN	Alliance Memory	DDR3 DRAM	OTHER	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	190 mA	268435456 words	4,8	YES	COMMON	1.5		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	95 Cel	3-STATE	256MX16	256M	1.425 V	0 Cel		BOTTOM	1	R-PBGA-B96		1.575 V	1.2 mm	800 MHz	7.5 mm		4294967296 bit	1.425 V					.008 Amp	4,8	13.5 mm
AS4C4M16SA-6BINTR	Alliance Memory	SYNCHRONOUS DRAM	INDUSTRIAL	54	TFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		4194304 words		YES		3.3		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		4MX16	4M		-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	S-PBGA-B54	3	3.6 V	1.2 mm		8 mm		67108864 bit	3 V	AUTO/SELF REFRESH	e1					8 mm	5.4 ns
EDB8132B4PB-8D-F-D	Micron Technology	LPDDR2 DRAM		168	VFBGA		SQUARE	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.2		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm			256MX32	256M				BOTTOM	1	S-PBGA-B168		1.3 V	.8 mm		12 mm		8589934592 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY		NOT SPECIFIED	NOT SPECIFIED			12 mm
HMA84GR7DJR4N-XN	Sk Hynix	DDR4 DRAM MODULE		288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		4294967296 words	8	YES	COMMON	1.2		72	MICROELECTRONIC ASSEMBLY	DIMM288,33		.85 mm	85 Cel		4GX72	4G		0 Cel		DUAL	1	R-XDMA-N288		1.26 V	30.88 mm	1600 MHz	3.98 mm		309237645312 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX					8	133.35 mm
IS42S16160J-7BLI	Integrated Silicon Solution	SYNCHRONOUS DRAM	INDUSTRIAL	54	TFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words		YES		3.3		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		16MX16	16M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B54		3.6 V	1.2 mm		8 mm		268435456 bit	3 V	AUTO/SELF REFRESH	e1		260			8 mm	7 ns
IS42S16800F-6BLI	Integrated Silicon Solution	SYNCHRONOUS DRAM	INDUSTRIAL	54	TFBGA	4096	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	120 mA	8388608 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	85 Cel	3-STATE	8MX16	8M		-40 Cel		BOTTOM	1	S-PBGA-B54		3.6 V	1.2 mm	166 MHz	8 mm	Not Qualified	134217728 bit	3 V	AUTO/SELF REFRESH				.002 Amp	1,2,4,8	8 mm	5.4 ns
IS42S16800F-6BLI-TR	Integrated Silicon Solution	SYNCHRONOUS DRAM	INDUSTRIAL	54	FBGA	4096	SQUARE	PLASTIC/EPOXY		YES		CMOS		BALL		120 mA	8388608 words	1,2,4,8,FP		COMMON	3.3	3.3	16	GRID ARRAY, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	85 Cel	3-STATE	8MX16	8M		-40 Cel		BOTTOM		S-PBGA-B54				166 MHz		Not Qualified	134217728 bit						.002 Amp	1,2,4,8		5.4 ns
IS42VS16160J-75TLI	Integrated Silicon Solution	SYNCHRONOUS DRAM	INDUSTRIAL	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS		16777216 words		YES		1.8		16	SMALL OUTLINE, THIN PROFILE			.8 mm	85 Cel		16MX16	16M		-40 Cel		DUAL	1	R-PDSO-G54		1.9 V	1.2 mm		10.16 mm		268435456 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			22.22 mm	5.4 ns
IS43DR81280B-3DBLI	Integrated Silicon Solution	DDR2 DRAM	INDUSTRIAL	60	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	270 mA	134217728 words	4,8	YES	COMMON	1.8	1.8	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm	85 Cel	3-STATE	128MX8	128M		-40 Cel		BOTTOM	1	R-PBGA-B60		1.9 V	1.2 mm	333 MHz	8 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH					4,8	10.5 mm	.45 ns
IS43QR16256B-075UBL	Integrated Silicon Solution	DDR4 DRAM	OTHER	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	385 mA	268435456 words	8	YES	COMMON	1.2		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	95 Cel	3-STATE	256MX16	256M	1.14 V	0 Cel		BOTTOM	1	R-PBGA-B96		1.26 V	1.2 mm	1333.33 MHz	7.5 mm		4294967296 bit	1.14 V	AUTO/SELF REFRESH			260	.062 Amp	8	13.5 mm
IS43QR16256B-075UBLI	Integrated Silicon Solution	DDR4 DRAM	INDUSTRIAL	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	385 mA	268435456 words	8	YES	COMMON	1.2		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	95 Cel	3-STATE	256MX16	256M	1.14 V	-40 Cel		BOTTOM	1	R-PBGA-B96		1.26 V	1.2 mm	1333.33 MHz	7.5 mm		4294967296 bit	1.14 V	AUTO/SELF REFRESH			260	.062 Amp	8	13.5 mm
IS46TR16256AL-125KBLA2	Integrated Silicon Solution	DDR3L DRAM	INDUSTRIAL	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	243 mA	268435456 words	4,8	YES	COMMON	1.35	1.35	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	DRAMs	.8 mm	105 Cel	3-STATE	256MX16	256M		-40 Cel		BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm	800 MHz	9 mm	Not Qualified	4294967296 bit	1.283 V	PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH				.016 Amp	4,8	13 mm	.1 ns
IS46TR16256BL-125KBLA2-TR	Integrated Silicon Solution	DDR3L DRAM		96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	228 mA	268435456 words	4,8	YES	COMMON	1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	105 Cel		256MX16	256M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96	3	1.45 V	1.2 mm	800 MHz	9 mm		4294967296 bit	1.283 V	AUTO/SELF REFRESH	e1	30	260	.028 Amp	4,8	13 mm
K4B1G1646G-BCMA	Samsung	DDR3 DRAM		96	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		BALL		195 mA	67108864 words	4,8		COMMON	1.5	1.5	16	GRID ARRAY, FINE PITCH	BGA96,9X16,32	DRAMs	.8 mm		3-STATE	64MX16	64M			MATTE TIN	BOTTOM		R-PBGA-B96	1			933 MHz		Not Qualified	1073741824 bit			e3		260	.01 Amp	4,8		.195 ns
K4B1G1646G-BCNB	Samsung	DDR3 DRAM		96	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		BALL			67108864 words	4,8		COMMON	1.5	1.5	16	GRID ARRAY, FINE PITCH	BGA96,9X16,32	DRAMs	.8 mm		3-STATE	64MX16	64M			MATTE TIN	BOTTOM		R-PBGA-B96	1			1066 MHz		Not Qualified	1073741824 bit			e3		260		4,8		.18 ns
K4S643232F-TC60	Samsung	SYNCHRONOUS DRAM	COMMERCIAL	86	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS	150 mA	2097152 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	SMALL OUTLINE, THIN PROFILE	TSSOP86,.46,20	DRAMs	.5 mm	70 Cel	3-STATE	2MX32	2M		0 Cel	TIN LEAD	DUAL	1	R-PDSO-G86		3.6 V	1.2 mm	166 MHz	10.16 mm	Not Qualified	67108864 bit	3 V	AUTO/SELF REFRESH	e0			.002 Amp	1,2,4,8	22.22 mm	5.5 ns
MT40A256M16GE-075E:B	Micron Technology	DDR4 DRAM	COMMERCIAL	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.2		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	70 Cel		256MX16	256M		0 Cel		BOTTOM	1	R-PBGA-B96		1.26 V	1.2 mm		9 mm		4294967296 bit	1.14 V	AUTO/SELF REFRESH						14 mm

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.