DRAM

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
TMS417400P-60DJ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	24	SOJ	2048	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS	110 mA	4194304 words		YES	COMMON	5	5	4	SMALL OUTLINE	SOJ24/26,.34		DRAMs	1.27 mm	70 Cel	3-STATE	4MX4	4M	0 Cel	DUAL	1	R-PDSO-J24	5.5 V	3.76 mm		7.62 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/BATTERY BACKUP/SELF REFRESH	NOT SPECIFIED	NOT SPECIFIED	.0005 Amp		17.145 mm	60 ns
TM124EU9C-70	Texas Instruments	FAST PAGE DRAM MODULE	COMMERCIAL	30		1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS		NO LEAD	ASYNCHRONOUS		1048576 words				5		9	MICROELECTRONIC ASSEMBLY					70 Cel		1MX9	1M	0 Cel	SINGLE	1	R-XSMA-N30	5.5 V				Not Qualified	9437184 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH						70 ns
SM44C257-12HJ	Texas Instruments
M38510/24902BVA	Texas Instruments	PAGE MODE DRAM	MILITARY	18	DIP		RECTANGULAR	UNSPECIFIED	PAGE	NO	1	CMOS	MIL-M-38510 Class B	THROUGH-HOLE	ASYNCHRONOUS		1024 words				5		1	IN-LINE					125 Cel		1KX1	1K	-55 Cel	DUAL	1	R-XDIP-T18	5.5 V				Not Qualified	1024 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						100 ns
TM8TT64KPN-8	Texas Instruments	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS	245 mA	8388608 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	8MX64	8M	0 Cel	DUAL	1	R-XDMA-N168	3.6 V		125 MHz		Not Qualified	536870912 bit	3 V				.001 Amp			6 ns
TMS46100-70DGA	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	20	LSOP	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS	60 mA	4194304 words		NO	SEPARATE	3.3	3.3	1	SMALL OUTLINE, LOW PROFILE	TSSOP20/26,.36		DRAMs	1.27 mm	70 Cel	3-STATE	4MX1	4M	0 Cel	DUAL	1	R-PDSO-G20	3.6 V	1.27 mm		7.62 mm	Not Qualified	4194304 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	NOT SPECIFIED	NOT SPECIFIED	.0003 Amp		17.14 mm	70 ns
TM4256FC1-12	Texas Instruments
TMS427800P-70DZ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	28	SOJ	2048	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS		2097152 words		YES		3.3		8	SMALL OUTLINE				1.27 mm	70 Cel		2MX8	2M	0 Cel	DUAL	1	R-PDSO-J28	3.6 V	3.76 mm		10.16 mm	Not Qualified	16777216 bit	3 V	RAS ONLY; CAS BEFORE RAS; HIDDEN; SELF REFRESH					18.415 mm	70 ns
TMS4116-20JL	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	16	DIP	128	RECTANGULAR	CERAMIC		NO		MOS		THROUGH-HOLE			16384 words			SEPARATE		+-5,12	1	IN-LINE	DIP16,.3		DRAMs	2.54 mm	70 Cel	3-STATE	16KX1	16K	0 Cel	DUAL		R-XDIP-T16					Not Qualified	16384 bit			NOT SPECIFIED	NOT SPECIFIED				200 ns
TMS4030-2JL	Texas Instruments		COMMERCIAL	22	DIP	64	RECTANGULAR	CERAMIC		NO		MOS		THROUGH-HOLE		60 mA	4096 words			SEPARATE			1	IN-LINE	DIP22,.4		Other Memory ICs	2.54 mm	70 Cel	3-STATE	4KX1	4K	0 Cel	DUAL		R-XDIP-T22					Not Qualified	4096 bit			NOT SPECIFIED	NOT SPECIFIED				200 ns
TMS45160DZ-80	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	40	SOJ		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	SYNCHRONOUS		262144 words		YES		5		16	SMALL OUTLINE					70 Cel		256KX16	256K	0 Cel	DUAL	1	R-PDSO-J40	5.5 V				Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH						80 ns
TM4257GU9-12	Texas Instruments
TM248NBK36E-80	Texas Instruments	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS		NO LEAD	ASYNCHRONOUS	1600 mA	2097152 words			COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	2MX36	2M	0 Cel	SINGLE	1	R-XSMA-N72	5.5 V	25.527 mm			Not Qualified	75497472 bit	4.5 V	RAS ONLY, CAS BEFORE RAS, HIDDEN REFRESH			.02 Amp			80 ns
SMJ4C1024-15HK	Texas Instruments	FAST PAGE DRAM	MILITARY	20	DFP	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS		FLAT	ASYNCHRONOUS		1048576 words				5		1	FLATPACK				1.27 mm	125 Cel	3-STATE	1MX1	1M	-55 Cel	DUAL	1	R-CDFP-F20	5.5 V	2.41 mm		9.655 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					17.015 mm	150 ns
SMJ44100-12JDBM	Texas Instruments	FAST PAGE DRAM	MILITARY	18	DIP	1024	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	ASYNCHRONOUS	70 mA	4194304 words		NO	SEPARATE	5	5	1	IN-LINE	DIP18,.3		DRAMs	2.54 mm	125 Cel	3-STATE	4MX1	4M	-55 Cel	DUAL	1	R-CDIP-T18	5.5 V	5.08 mm		7.62 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	NOT SPECIFIED	NOT SPECIFIED	.004 Amp		22.86 mm	120 ns
TMS626812ADGE-10	Texas Instruments	SYNCHRONOUS DRAM	COMMERCIAL	44	TSOP2		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS		1048576 words		YES		3.3		8	SMALL OUTLINE, THIN PROFILE				.8 mm	70 Cel		1MX8	1M	0 Cel	DUAL	1	R-PDSO-G44	3.6 V	1.2 mm		10.16 mm	Not Qualified	8388608 bit	3 V	AUTO/SELF REFRESH					18.41 mm	7 ns
TMS44410-60SD	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	20	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS	95 mA	1048576 words		NO	COMMON	5	5	4	IN-LINE	ZIP20,.1		DRAMs	1.27 mm	70 Cel	3-STATE	1MX4	1M	0 Cel	ZIG-ZAG	1	R-PZIP-T20	5.5 V	10.16 mm		2.8 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	NOT SPECIFIED	NOT SPECIFIED	.001 Amp			60 ns
TMS44410-80SD	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	20	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS	75 mA	1048576 words		NO	COMMON	5	5	4	IN-LINE	ZIP20,.1		DRAMs	1.27 mm	70 Cel	3-STATE	1MX4	1M	0 Cel	ZIG-ZAG	1	R-PZIP-T20	5.5 V	10.16 mm		2.8 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	NOT SPECIFIED	NOT SPECIFIED	.001 Amp			80 ns
SMJ4C1024-12FQM	Texas Instruments	FAST PAGE DRAM	MILITARY	20	SON	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS	38535Q/M;38534H;883B	NO LEAD	SYNCHRONOUS	60 mA	1048576 words			SEPARATE	5	5	1	SMALL OUTLINE	SOLCC20/26,.35		DRAMs	1.27 mm	125 Cel	3-STATE	1MX1	1M	-55 Cel	DUAL	1	R-CDSO-N20	5.5 V	2.34 mm		8.89 mm	Not Qualified	1048576 bit	4.5 V	CAS BEFORE RAS REFRESH	NOT SPECIFIED	NOT SPECIFIED	.003 Amp		17.145 mm	120 ns
TMS4C1025-12N	Texas Instruments	NIBBLE MODE DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	PLASTIC/EPOXY	NIBBLE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS	55 mA	1048576 words			SEPARATE	5	5	1	IN-LINE	DIP18,.3		DRAMs	2.54 mm	70 Cel	3-STATE	1MX1	1M	0 Cel	DUAL	1	R-PDIP-T18	5.5 V	5.08 mm		7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	NOT SPECIFIED	NOT SPECIFIED	.002 Amp		22.48 mm	120 ns
TMS4116-25JDL	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	16	DIP	128	RECTANGULAR	CERAMIC		NO		MOS		THROUGH-HOLE			16384 words			SEPARATE		+-5,12	1	IN-LINE	DIP16,.3		DRAMs	2.54 mm	70 Cel	3-STATE	16KX1	16K	0 Cel	DUAL		R-XDIP-T16					Not Qualified	16384 bit			NOT SPECIFIED	NOT SPECIFIED				250 ns
SMJ4164-20FGE	Texas Instruments	PAGE MODE DRAM	INDUSTRIAL	18	QCCN	256	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	PAGE	YES	1	NMOS	38535Q/M;38534H;883B	NO LEAD	ASYNCHRONOUS		65536 words			SEPARATE	5	5	1	CHIP CARRIER	LCC18,.3X.43		DRAMs	1.27 mm	85 Cel	3-STATE	64KX1	64K	-40 Cel	QUAD	1	R-CQCC-N18	5.5 V	1.85 mm		7.366 mm	Not Qualified	65536 bit	4.5 V	RAS ONLY REFRESH	NOT SPECIFIED	NOT SPECIFIED			10.795 mm	200 ns
TMS416160-80DC	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	44	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS		1048576 words				5		16	SMALL OUTLINE, THIN PROFILE				.8 mm	70 Cel		1MX16	1M	0 Cel	DUAL	1	R-PDSO-G44	5.5 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH					20.95 mm	80 ns
TM124FBK32-70	Texas Instruments	EDO DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	MOS		NO LEAD	ASYNCHRONOUS	720 mA	1048576 words		NO	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	1MX32	1M	0 Cel	SINGLE	1	R-XSMA-N72	5.5 V	25.4 mm			Not Qualified	33554432 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH			.008 Amp			70 ns
TMS4C1024-60SD	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	20	ZIP	512	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		THROUGH-HOLE		95 mA	1048576 words			SEPARATE	5	5	1	IN-LINE	ZIP20,.1		DRAMs	1.27 mm	70 Cel	3-STATE	1MX1	1M	0 Cel	ZIG-ZAG		R-PZIP-T20					Not Qualified	1048576 bit					.002 Amp			60 ns
TMS44100-12DM	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		J BEND		65 mA	4194304 words		NO	SEPARATE	5	5	1	SMALL OUTLINE	SOJ20/26,.4		DRAMs	1.27 mm	70 Cel	3-STATE	4MX1	4M	0 Cel	DUAL		R-PDSO-J20					Not Qualified	4194304 bit					.002 Amp			120 ns
TMS416800-60DZ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	28	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS		2097152 words				5		8	SMALL OUTLINE				1.27 mm	70 Cel	3-STATE	2MX8	2M	0 Cel	DUAL	1	R-PDSO-J28	5.5 V	3.76 mm		10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					18.415 mm	60 ns
TMS46460-80DGA	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	24	TSOP2	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS	50 mA	1048576 words		NO	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSSOP20/26,.36		DRAMs	1.27 mm	70 Cel	3-STATE	1MX4	1M	0 Cel	DUAL	1	R-PDSO-G24	3.6 V	1.2 mm		7.62 mm	Not Qualified	4194304 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	NOT SPECIFIED	NOT SPECIFIED	.0003 Amp		17.14 mm	80 ns
TM248GBK32H-60	Texas Instruments	EDO DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS		NO LEAD	ASYNCHRONOUS	640 mA	2097152 words		NO	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72	16	DRAMs	1.27 mm	70 Cel	3-STATE	2MX32	2M	0 Cel	SINGLE	1	R-XSMA-N72	5.5 V	25.4 mm			Not Qualified	67108864 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH			.004 Amp			60 ns
TMS465169-40DGE	Texas Instruments	EDO DRAM	COMMERCIAL	50	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	MOS		GULL WING	ASYNCHRONOUS	160 mA	4194304 words		NO	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP50,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	4MX16	4M	0 Cel	DUAL	1	R-PDSO-G50	3.6 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	NOT SPECIFIED	NOT SPECIFIED	.0005 Amp		20.95 mm	40 ns
TMS427409A-50DGA	Texas Instruments	EDO DRAM	COMMERCIAL	24	TSOP2	2048	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS		GULL WING	SYNCHRONOUS	120 mA	4194304 words		NO	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP24/26,.36		DRAMs	1.27 mm	70 Cel	3-STATE	4MX4	4M	0 Cel	DUAL	1	R-PDSO-G24	3.6 V	1.2 mm		7.62 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	NOT SPECIFIED	NOT SPECIFIED	.001 Amp		17.14 mm	50 ns
TM4TT64KPN-8A	Texas Instruments	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS	165 mA	4194304 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	4MX64	4M	0 Cel	DUAL	1	R-XDMA-N168	3.6 V		125 MHz		Not Qualified	268435456 bit	3 V				.001 Amp			6 ns
TM4257GU9-20L	Texas Instruments	DRAM MODULE	COMMERCIAL	30	SIMM	256	RECTANGULAR	UNSPECIFIED	NIBBLE	NO	1	NMOS		NO LEAD	ASYNCHRONOUS		262144 words			COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIM30		DRAMs	2.54 mm	70 Cel	3-STATE	256KX9	256K	0 Cel	SINGLE	1	R-XSMA-N30	5.5 V	16.51 mm			Not Qualified	2359296 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						200 ns
5962-01-266-1459	Texas Instruments	PAGE MODE DRAM	OTHER	18	QCCN	256	RECTANGULAR	CERAMIC		YES		MOS	38535Q/M;38534H;883B	NO LEAD			262144 words			SEPARATE	5	5	1	CHIP CARRIER	LCC18,.3X.5		DRAMs	1.27 mm	110 Cel	3-STATE	256KX1	256K	-55 Cel	QUAD		R-XQCC-N18					Not Qualified	262144 bit			NOT SPECIFIED	NOT SPECIFIED				120 ns
TMS4256-20NE	Texas Instruments	PAGE MODE DRAM	INDUSTRIAL	16	DIP	256	RECTANGULAR	PLASTIC/EPOXY	PAGE	NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS		262144 words				5		1	IN-LINE				2.54 mm	85 Cel	3-STATE	256KX1	256K	-40 Cel	DUAL	1	R-PDIP-T16	5.5 V	5.08 mm		7.62 mm	Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					19.305 mm	200 ns
SMJ55161-80GBM	Texas Instruments	VIDEO DRAM	MILITARY	68	PGA	512	SQUARE	CERAMIC, METAL-SEALED COFIRED	FAST PAGE WITH EDO	NO	1	MOS	38535Q/M;38534H;883B	PIN/PEG	ASYNCHRONOUS	200 mA	262144 words				5	5	16	GRID ARRAY	PGA68,9X9		Other Memory ICs	2.54 mm	125 Cel	3-STATE	256KX16	256K	-55 Cel	PERPENDICULAR	2	S-CPGA-P68	5.5 V			24.38 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 256 X 16 SAM PORT	NOT SPECIFIED	NOT SPECIFIED	.012 Amp		24.38 mm	80 ns
TMS4461-12SDL	Texas Instruments	VIDEO DRAM	COMMERCIAL	24	ZIP	256	RECTANGULAR	PLASTIC/EPOXY	PAGE	NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS		65536 words				5	5	4	IN-LINE	ZIP24,.1		Other Memory ICs	2.54 mm	70 Cel	3-STATE	64KX4	64K	0 Cel	ZIG-ZAG	2	R-PZIP-T24	5.5 V	10.16 mm		2.8 mm	Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 256 X 4 SAM PORT	NOT SPECIFIED	NOT SPECIFIED				120 ns
TMS664414DGE-10	Texas Instruments	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	MOS		GULL WING	SYNCHRONOUS	175 mA	16777216 words	1,2,4,8	YES	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	16MX4	16M	0 Cel	DUAL	1	R-PDSO-G54	3.6 V	1.2 mm	100 MHz	10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/AUTO/SELF REFRESH	NOT SPECIFIED	NOT SPECIFIED	.001 Amp	1,2,4,8	22.22 mm	7.5 ns
TMS428169A-60DZ	Texas Instruments	EDO DRAM	COMMERCIAL	42	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS		J BEND	ASYNCHRONOUS	150 mA	1048576 words		NO	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ42,.44		DRAMs	1.27 mm	70 Cel	3-STATE	1MX16	1M	0 Cel	DUAL	1	R-PDSO-J42	3.6 V	3.76 mm		10.16 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	NOT SPECIFIED	NOT SPECIFIED	.001 Amp		27.305 mm	60 ns
TM2EP72DPN-60	Texas Instruments	EDO DRAM MODULE	COMMERCIAL	168	DIMM	2048	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	MOS		NO LEAD	ASYNCHRONOUS	816 mA	2097152 words			COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	2MX72	2M	0 Cel	DUAL	1	R-XDMA-N168	3.6 V				Not Qualified	150994944 bit	3 V	CAS BEFORE RAS REFRESH			.009 Amp			15 ns
TM497MBK36Q-80	Texas Instruments	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	2048	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS		NO LEAD	ASYNCHRONOUS		4194304 words				5		36	MICROELECTRONIC ASSEMBLY					70 Cel	3-STATE	4MX36	4M	0 Cel	SINGLE	1	R-XSMA-N72	5.5 V				Not Qualified	150994944 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						80 ns
TMS426400-70DGB	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	24	TSOP2-R	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS		4194304 words				3.3		4	SMALL OUTLINE, THIN PROFILE				1.27 mm	70 Cel		4MX4	4M	0 Cel	DUAL	1	R-PDSO-G24	3.6 V	1.2 mm		7.62 mm	Not Qualified	16777216 bit	3 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH					17.14 mm	70 ns
TM124EAD9C-80	Texas Instruments	FAST PAGE DRAM MODULE	COMMERCIAL	30	SIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS		NO LEAD	ASYNCHRONOUS	225 mA	1048576 words			COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIM30		DRAMs	2.54 mm	70 Cel	3-STATE	1MX9	1M	0 Cel	SINGLE	1	R-XSMA-N30	5.5 V	20.4978 mm			Not Qualified	9437184 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH			.003 Amp			80 ns
TM124MBK36E-60	Texas Instruments	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS		NO LEAD	ASYNCHRONOUS	1050 mA	1048576 words			COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	1MX36	1M	0 Cel	SINGLE	1	R-XSMA-N72	5.5 V	25.527 mm			Not Qualified	37748736 bit	4.5 V	RAS ONLY, CAS BEFORE RAS, HIDDEN REFRESH			.01 Amp			60 ns
TMS417400PDJ-80	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	24	SOJ		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS		4194304 words		YES		5		4	SMALL OUTLINE				1.27 mm	70 Cel		4MX4	4M	0 Cel	DUAL	1	R-PDSO-J24	5.5 V	3.76 mm		7.62 mm	Not Qualified	16777216 bit	4.5 V	CAS BEFORE RAS/SELF REFRESH					17.145 mm	80 ns
TMS4C1024-12DN	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	20	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS	55 mA	1048576 words			SEPARATE	5	5	1	SMALL OUTLINE	SOJ20/26,.34		DRAMs	1.27 mm	70 Cel	3-STATE	1MX1	1M	0 Cel	DUAL	1	R-PDSO-J20	5.5 V	1.83 mm		7.47 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	NOT SPECIFIED	NOT SPECIFIED	.002 Amp		16.51 mm	120 ns
TM2SJ64EPN-12	Texas Instruments	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS	1000 mA	2097152 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32		DRAMs	.8 mm	70 Cel	3-STATE	2MX64	2M	0 Cel	DUAL	1	R-XDMA-N144	3.6 V		83 MHz		Not Qualified	134217728 bit	3 V	AUTO/SELF REFRESH			.016 Amp			8 ns
SMJ44C250-2HJM	Texas Instruments	VIDEO DRAM	MILITARY	28	SOJ	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS	38535Q/M;38534H;883B	J BEND	ASYNCHRONOUS	100 mA	262144 words				5	5	4	SMALL OUTLINE	SOJ28,.44		Other Memory ICs	1.27 mm	125 Cel	3-STATE	256KX4	256K	-55 Cel	DUAL	2	R-CDSO-J28	5.25 V	4.521 mm		10.541 mm	Not Qualified	1048576 bit	4.75 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 512 X 4 SAM PORT	NOT SPECIFIED	NOT SPECIFIED	.015 Amp		18.542 mm	120 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.