DRAM

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
TMS417400-80DZ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	24	SOJ	2048	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS		4194304 words				5		4	SMALL OUTLINE				1.27 mm	70 Cel		4MX4	4M	0 Cel		DUAL	1	R-PDSO-J24	5.5 V	3.76 mm		10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH						18.415 mm	80 ns
TMX4C1026-10N	Texas Instruments	NIBBLE MODE DRAM		18	DIP	512	RECTANGULAR	PLASTIC/EPOXY	NIBBLE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS		1048576 words				5		1	IN-LINE				2.54 mm		3-STATE	1MX1	1M			DUAL	1	R-PDIP-T18	5.5 V	5.08 mm		7.62 mm	Not Qualified	1048576 bit	4.5 V							22.48 mm	100 ns
TM124MBK36G-80L	Texas Instruments	FAST PAGE DRAM MODULE	COMMERCIAL	72		1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS		NO LEAD	ASYNCHRONOUS		1048576 words				5		36	MICROELECTRONIC ASSEMBLY		18			70 Cel	3-STATE	1MX36	1M	0 Cel		SINGLE	1	R-XSMA-N72	5.5 V				Not Qualified	37748736 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH							80 ns
TM024HAC4-10	Texas Instruments
SMJ4C1024-12HKM	Texas Instruments	FAST PAGE DRAM	MILITARY	20	DFP	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE WITH EDO	YES	1	CMOS	38535Q/M;38534H;883B	FLAT	SYNCHRONOUS	60 mA	1048576 words			SEPARATE	5	5	1	FLATPACK	FL20,.4		DRAMs	1.27 mm	125 Cel	3-STATE	1MX1	1M	-55 Cel		DUAL	1	R-CDFP-F20	5.5 V	2.41 mm		9.655 mm	Not Qualified	1048576 bit	4.5 V	CAS BEFORE RAS REFRESH		NOT SPECIFIED	NOT SPECIFIED	.003 Amp		17.015 mm	120 ns
TMS44400-70DM	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS	85 mA	1048576 words		NO	COMMON	5	5	4	SMALL OUTLINE	SOJ20/26,.4		DRAMs	1.27 mm	70 Cel	3-STATE	1MX4	1M	0 Cel		DUAL	1	R-PDSO-J20	5.5 V	3.76 mm		8.89 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.001 Amp		17.145 mm	70 ns
TMS426800P-70DE	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	32	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS		2097152 words		YES		3.3		8	SMALL OUTLINE, THIN PROFILE				1.27 mm	70 Cel		2MX8	2M	0 Cel		DUAL	1	R-PDSO-G32	3.6 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	3 V	RAS ONLY; CAS BEFORE RAS; HIDDEN; SELF REFRESH						20.95 mm	70 ns
TM4257HE4-15	Texas Instruments
TM4256GV8-10L	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	30		256		PLASTIC/EPOXY		NO		MOS					262144 words			COMMON	5	5	8		SIP30,.2		DRAMs	2.54 mm	70 Cel	3-STATE	256KX8	256K	0 Cel		SINGLE				11.43 mm			Not Qualified	2097152 bit									100 ns
TMS44410-70DM	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS	85 mA	1048576 words		NO	COMMON	5	5	4	SMALL OUTLINE	SOJ20/26,.4		DRAMs	1.27 mm	70 Cel	3-STATE	1MX4	1M	0 Cel		DUAL	1	R-PDSO-J20	5.5 V	3.76 mm		8.89 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.001 Amp		17.145 mm	70 ns
TM4256GP9-12	Texas Instruments
TM248CBK32I-60	Texas Instruments	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS		NO LEAD	ASYNCHRONOUS	360 mA	2097152 words		NO	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	2MX32	2M	0 Cel		SINGLE	1	R-XSMA-N72	5.5 V	25.4 mm			Not Qualified	67108864 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				.004 Amp			60 ns
TMS626812B-10ADGE	Texas Instruments	SYNCHRONOUS DRAM	COMMERCIAL	44	TSOP2		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	MOS		GULL WING	SYNCHRONOUS		2097152 words		YES		3.3		8	SMALL OUTLINE, THIN PROFILE				.8 mm	70 Cel		2MX8	2M	0 Cel		DUAL	1	R-PDSO-G44	3.6 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	3 V	AUTO/SELF REFRESH						18.41 mm	6 ns
SMJ4C1024-15HJ	Texas Instruments	FAST PAGE DRAM	MILITARY	20	SOJ	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS		1048576 words				5		1	SMALL OUTLINE				1.27 mm	125 Cel	3-STATE	1MX1	1M	-55 Cel		DUAL	1	R-CDSO-J20	5.5 V	3.48 mm		8.382 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						17.145 mm	150 ns
TM124MBK36B-7	Texas Instruments	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS		NO LEAD	ASYNCHRONOUS	765 mA	1048576 words			COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72	18	DRAMs	1.27 mm	70 Cel	3-STATE	1MX36	1M	0 Cel		SINGLE	1	R-XSMA-N72	5.25 V	25.5778 mm			Not Qualified	37748736 bit	4.75 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				.009 Amp			70 ns
TMS4256-15FML	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	18	QCCJ	256	RECTANGULAR	PLASTIC/EPOXY	PAGE	YES	1	NMOS		J BEND	ASYNCHRONOUS		262144 words			SEPARATE	5	5	1	CHIP CARRIER	LDCC18,.33X.53		DRAMs	1.27 mm	70 Cel	3-STATE	256KX1	256K	0 Cel		QUAD	1	R-PQCC-J18	5.5 V	3.53 mm		7.366 mm	Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED			12.446 mm	150 ns
TMS416400P-70DGB	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	24	TSOP2-R	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS		4194304 words		YES		5		4	SMALL OUTLINE, THIN PROFILE				1.27 mm	70 Cel		4MX4	4M	0 Cel		DUAL	1	R-PDSO-G24	5.5 V	1.2 mm		7.62 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; BATTERY BACKUP; SELF REFRESH						17.14 mm	70 ns
TM124BBK32S-80	Texas Instruments	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS		NO LEAD	ASYNCHRONOUS	640 mA	1048576 words		NO	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	1MX32	1M	0 Cel		SINGLE	1	R-XSMA-N72	5.5 V	25.527 mm			Not Qualified	33554432 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				.008 Amp			80 ns
TMS416809-70DZ	Texas Instruments	EDO DRAM	COMMERCIAL	28	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS		J BEND	ASYNCHRONOUS		2097152 words				5		8	SMALL OUTLINE				1.27 mm	70 Cel	3-STATE	2MX8	2M	0 Cel		DUAL	1	R-PDSO-J28	5.5 V	3.76 mm		10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						18.415 mm	70 ns
5962-9061701MRA	Texas Instruments	FAST PAGE DRAM	MILITARY	20	DIP	512	RECTANGULAR	CERAMIC, GLASS-SEALED	FAST PAGE	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	ASYNCHRONOUS	55 mA	262144 words			COMMON	5	5	4	IN-LINE	DIP20,.3		DRAMs	2.54 mm	125 Cel	3-STATE	256KX4	256K	-55 Cel		DUAL	1	R-GDIP-T20	5.5 V				Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.004 Amp			150 ns
TMS426160AP-50DZ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	42	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		J BEND		110 mA	1048576 words		YES	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ42,.44		DRAMs	1.27 mm	70 Cel	3-STATE	1MX16	1M	0 Cel		DUAL		R-PDSO-J42					Not Qualified	16777216 bit				NOT SPECIFIED	NOT SPECIFIED	.00015 Amp			50 ns
TMS426160	Texas Instruments	FAST PAGE DRAM
TM4EP72BJN-50	Texas Instruments	EDO DRAM MODULE	COMMERCIAL	168	DIMM	2048	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	NO	1	MOS		NO LEAD	SYNCHRONOUS	2160 mA	4194304 words		NO	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	4MX72	4M	0 Cel	GOLD	DUAL	1	R-PDMA-N168	3.6 V	25.53 mm			Not Qualified	301989888 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH	e4			.018 Amp		133.35 mm	50 ns
TM024HAC4-15L	Texas Instruments	FAST PAGE DRAM MODULE	COMMERCIAL	24		512	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS	220 mA	1048576 words			SEPARATE	5	5	4	MICROELECTRONIC ASSEMBLY	SIP24,.2		DRAMs	2.54 mm	70 Cel	3-STATE	1MX4	1M	0 Cel		SINGLE	1	R-XSMA-T24	5.5 V				Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.012 Amp			150 ns
TMS4C1024-80SD	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	20	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS	75 mA	1048576 words			SEPARATE	5	5	1	IN-LINE	ZIP20,.1		DRAMs	1.27 mm	70 Cel	3-STATE	1MX1	1M	0 Cel		ZIG-ZAG	1	R-PZIP-T20	5.5 V	10.16 mm		2.8 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.002 Amp			80 ns
TMS46100P-80DGB	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	20	TSOP2-R	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS		4194304 words		YES		3.3		1	SMALL OUTLINE, THIN PROFILE				1.27 mm	70 Cel		4MX1	4M	0 Cel		DUAL	1	R-PDSO-G20	3.6 V	1.2 mm		7.62 mm	Not Qualified	4194304 bit	3 V	RAS ONLY; CAS BEFORE RAS; HIDDEN; SELF REFRESH						17.14 mm	80 ns
TMS427400PDGA-70	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	24	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS		4194304 words		YES		3.3		4	SMALL OUTLINE, THIN PROFILE				1.27 mm	70 Cel		4MX4	4M	0 Cel		DUAL	1	R-PDSO-G24	3.6 V	1.2 mm		7.62 mm	Not Qualified	16777216 bit	3 V	CAS BEFORE RAS/SELF REFRESH						17.14 mm	70 ns
TMS4C1027-12NL	Texas Instruments	STATIC COLUMN DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	PLASTIC/EPOXY	STATIC COLUMN	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS		1048576 words				5		1	IN-LINE				2.54 mm	70 Cel	3-STATE	1MX1	1M	0 Cel		DUAL	1	R-PDIP-T18	5.5 V	5.08 mm		7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						22.48 mm	120 ns
TMS4416-20FPL	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	18	QCCJ	256	RECTANGULAR	PLASTIC/EPOXY	PAGE	YES	1	NMOS		J BEND	ASYNCHRONOUS		16384 words			COMMON	5	5	4	CHIP CARRIER	LDCC18,.33X.53		DRAMs	1.27 mm	70 Cel	3-STATE	16KX4	16K	0 Cel		QUAD	1	R-PQCC-J18	5.5 V	3.5 mm		7.24 mm	Not Qualified	65536 bit	4.5 V	RAS ONLY REFRESH		NOT SPECIFIED	NOT SPECIFIED			10.795 mm	200 ns
TM497TBM40S-70	Texas Instruments	FAST PAGE DRAM MODULE	COMMERCIAL	72		2048	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS		NO LEAD	ASYNCHRONOUS		4194304 words				5		40	MICROELECTRONIC ASSEMBLY					70 Cel		4MX40	4M	0 Cel		SINGLE	1	R-XSMA-N72	5.5 V				Not Qualified	167772160 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH							70 ns
TM248VBK40S-60	Texas Instruments	FAST PAGE DRAM MODULE	COMMERCIAL	72		1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS		NO LEAD	ASYNCHRONOUS		2097152 words				5		40	MICROELECTRONIC ASSEMBLY					70 Cel		2MX40	2M	0 Cel		SINGLE	1	R-XSMA-N72	5.5 V				Not Qualified	83886080 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH							60 ns
TMS45165S-70DGE	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	40	TSOP2	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS	160 mA	262144 words		YES	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	256KX16	256K	0 Cel		DUAL	1	R-PDSO-G40	5.5 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH; BYTE WRITE		NOT SPECIFIED	NOT SPECIFIED	.0002 Amp		18.41 mm	70 ns
SMJ626162-20DGEM	Texas Instruments	SYNCHRONOUS DRAM	MILITARY	50	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS		1048576 words				3.3		16	SMALL OUTLINE, THIN PROFILE				.8 mm	125 Cel	3-STATE	1MX16	1M	-55 Cel		DUAL	1	R-PDSO-G50	3.465 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	3.135 V	AUTO REFRESH						20.95 mm
SMJ416100-10FNCM	Texas Instruments	FAST PAGE DRAM	MILITARY	24	SON	4096	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS		NO LEAD	ASYNCHRONOUS	60 mA	16777216 words		NO	SEPARATE	5	5	1	SMALL OUTLINE	SOLCC24/28,.45		DRAMs	1.27 mm	125 Cel	3-STATE	16MX1	16M	-55 Cel		DUAL	1	R-CDSO-N24	5.5 V	3.18 mm		11.43 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.001 Amp		19.685 mm	100 ns
TMS45169-60DGE	Texas Instruments	EDO DRAM	COMMERCIAL	40	TSOP	512	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		GULL WING		180 mA	262144 words		NO	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	256KX16	256K	0 Cel		DUAL		R-PDSO-G40					Not Qualified	4194304 bit				NOT SPECIFIED	NOT SPECIFIED	.001 Amp			60 ns
SMJ44C251-12JDM	Texas Instruments	VIDEO DRAM	MILITARY	28	DIP	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	ASYNCHRONOUS	100 mA	262144 words				5	5	4	IN-LINE	DIP28,.4		Other Memory ICs	2.54 mm	125 Cel	3-STATE	256KX4	256K	-55 Cel		DUAL	2	R-CDIP-T28	5.5 V	4.445 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.015 Amp		35.925 mm	120 ns
TMS4416-12NL	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	18	DIP	256	RECTANGULAR	PLASTIC/EPOXY	PAGE	NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS		16384 words			COMMON	5	5	4	IN-LINE	DIP18,.3		DRAMs	2.54 mm	70 Cel	3-STATE	16KX4	16K	0 Cel		DUAL	1	R-PDIP-T18	5.5 V	5.08 mm		7.62 mm	Not Qualified	65536 bit	4.5 V	RAS ONLY REFRESH		NOT SPECIFIED	NOT SPECIFIED			22.48 mm	120 ns
TMS4256-8SD	Texas Instruments
TM892VBM40S-70	Texas Instruments	FAST PAGE DRAM MODULE	COMMERCIAL	72		4096	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS		NO LEAD	ASYNCHRONOUS		8388608 words				5		40	MICROELECTRONIC ASSEMBLY					70 Cel		8MX40	8M	0 Cel		SINGLE	1	R-XSMA-N72	5.5 V				Not Qualified	335544320 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH							70 ns
TM248VBK40S-80	Texas Instruments	FAST PAGE DRAM MODULE	COMMERCIAL	72		1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS		NO LEAD	ASYNCHRONOUS		2097152 words				5		40	MICROELECTRONIC ASSEMBLY					70 Cel		2MX40	2M	0 Cel		SINGLE	1	R-XSMA-N72	5.5 V				Not Qualified	83886080 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH							80 ns
TMS428169AP-50DGE	Texas Instruments	EDO DRAM	COMMERCIAL	44	TSOP2	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS		GULL WING	ASYNCHRONOUS	170 mA	1048576 words		YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44/50,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	1MX16	1M	0 Cel		DUAL	1	R-PDSO-G44	3.6 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/BATTERY BACKUP/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.00015 Amp		20.95 mm	50 ns
TM4256GV8-15L	Texas Instruments	DRAM MODULE	COMMERCIAL	30		256	RECTANGULAR	UNSPECIFIED	PAGE	NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS		262144 words			COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	SIP30,.2		DRAMs	2.54 mm	70 Cel	3-STATE	256KX8	256K	0 Cel		SINGLE	1	R-XSMA-T30	5.5 V	11.43 mm			Not Qualified	2097152 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED				150 ns
TM497MBM36Q-70	Texas Instruments	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	2048	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS		NO LEAD	ASYNCHRONOUS	1160 mA	4194304 words		NO	COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	4MX36	4M	0 Cel		SINGLE	1	R-XSMA-N72	5.5 V	33.147 mm			Not Qualified	150994944 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				.012 Amp			70 ns
TMS46400-70DJ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS	60 mA	1048576 words		NO	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ20/26,.34		DRAMs	1.27 mm	70 Cel	3-STATE	1MX4	1M	0 Cel		DUAL	1	R-PDSO-J20	3.6 V	3.76 mm		7.62 mm	Not Qualified	4194304 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		NOT SPECIFIED	NOT SPECIFIED	.0003 Amp		17.145 mm	70 ns
TM256KBK36B-80	Texas Instruments	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	512	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS		NO LEAD	ASYNCHRONOUS	675 mA	262144 words			COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72	18	DRAMs	1.27 mm	70 Cel	3-STATE	256KX36	256K	0 Cel		SINGLE	1	R-XSMA-N72	5.5 V	25.4 mm			Not Qualified	9437184 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				.018 Amp			80 ns
5962-9062202MYX	Texas Instruments	FAST PAGE DRAM	MILITARY	20	SON		RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS	MIL-STD-883	NO LEAD	ASYNCHRONOUS		4194304 words				5		1	SMALL OUTLINE				1.27 mm	125 Cel		4MX1	4M	-55 Cel		DUAL	1	R-XDSO-N20	5.5 V	4.26 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						17.775 mm	100 ns
TMS626802DGE-12	Texas Instruments	SYNCHRONOUS DRAM	COMMERCIAL	44	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		GULL WING		140 mA	2097152 words	1,2,4,8		COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	2MX8	2M	0 Cel		DUAL		R-PDSO-G44			83 MHz		Not Qualified	16777216 bit						.001 Amp	1,2,4,8		10 ns
SMJ44C251-2JDM	Texas Instruments	VIDEO DRAM	MILITARY	28	DIP	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS		262144 words				5		4	IN-LINE				2.54 mm	125 Cel	3-STATE	256KX4	256K	-55 Cel		DUAL	2	R-CDIP-T28	5.25 V	4.445 mm		10.16 mm	Not Qualified	1048576 bit	4.75 V	CAS BEFORE RAS/HIDDEN REFRESH; 512 X 4 SAM PORT						36.83 mm	120 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.