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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	I2C Control Byte	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length
DS28E04S-100/T&R	Maxim Integrated	EEPROM	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL/SERIAL	SYNCHRONOUS		4096 words	3		1	SMALL OUTLINE				1.27 mm	85 Cel		4KX1	4K	-40 Cel	TIN LEAD		DUAL		R-PDSO-G16		5.25 V	1.75 mm			3.9 mm	Not Qualified		1-WIRE	4096 bit	2.8 V		e0				9.9 mm
DS28E04S-100/T	Maxim Integrated	EEPROM	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		4096 words	3	3/5	1	SMALL OUTLINE	SOP16,.25	EEPROMs		1.27 mm	85 Cel		4KX1	4K	-40 Cel	MATTE TIN		DUAL		R-PDSO-G16	1	5.25 V	1.75 mm	50000 Write/Erase Cycles		3.9 mm	Not Qualified		1-WIRE	4096 bit	2.8 V		e3	30	260		9.9 mm
DS28E04S-100+T	Analog Devices	EEPROM	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		4096 words	3	3/5	1	SMALL OUTLINE	SOP16,.25	EEPROMs		1.27 mm	85 Cel		4KX1	4K	-40 Cel	Matte Tin (Sn) - annealed		DUAL		R-PDSO-G16	1	5.25 V	1.75 mm	50000 Write/Erase Cycles		3.9 mm	Not Qualified		1-WIRE	4096 bit	2.8 V		e3	30	260		9.9 mm
DS28E04S-100	Maxim Integrated	EEPROM	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL/SERIAL	SYNCHRONOUS		4096 words	3	3/5	1	SMALL OUTLINE	SOP16,.25	EEPROMs		1.27 mm	85 Cel		4KX1	4K	-40 Cel	TIN LEAD		DUAL		R-PDSO-G16		5.25 V	1.75 mm	50000 Write/Erase Cycles		3.9 mm	Not Qualified		1-WIRE	4096 bit	2.8 V		e0				9.9 mm
DS28E04S-100+	Analog Devices	EEPROM	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		4096 words	3	3/5	1	SMALL OUTLINE	SOP16,.25	EEPROMs		1.27 mm	85 Cel		4KX1	4K	-40 Cel	Matte Tin (Sn) - annealed		DUAL		R-PDSO-G16	1	5.25 V	1.75 mm	50000 Write/Erase Cycles		3.9 mm	Not Qualified		1-WIRE	4096 bit	2.8 V		e3	30	260		9.9 mm
BU9883FV-WE2	ROHM	EEPROM	INDUSTRIAL	16	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	2048 words		3.3/5	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSSOP16,.25	EEPROMs	40	.65 mm	85 Cel	3-STATE	2KX8	2K	-40 Cel		1010000R	DUAL	HARDWARE	R-PDSO-G16		5.5 V	1.25 mm	1000000 Write/Erase Cycles	.4 MHz	4.4 mm	Not Qualified	5 ms	I2C	16384 bit	3 V			NOT SPECIFIED	NOT SPECIFIED	.0001 Amp	5 mm
M24512-MJ5T	STMicroelectronics	EEPROM	OTHER	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	65536 words	5	5	8	SMALL OUTLINE	SOP16,.4	EEPROMs	40	1.27 mm	85 Cel		64KX8	64K	-20 Cel	TIN LEAD	1010DDDR	DUAL	HARDWARE	R-PDSO-G16		5.5 V	2.65 mm	100000 Write/Erase Cycles	.4 MHz	7.5 mm	Not Qualified	10 ms	I2C	524288 bit	4.5 V		e0			.00001 Amp	10.3 mm
M24512-RMJ5T	STMicroelectronics	EEPROM	OTHER	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	.8 mA	65536 words	2.5	2/3.3	8	SMALL OUTLINE	SOP16,.4	EEPROMs	40	1.27 mm	85 Cel		64KX8	64K	-20 Cel	TIN LEAD	1010DDDR	DUAL	HARDWARE	R-PDSO-G16		3.6 V	2.65 mm	100000 Write/Erase Cycles	.1 MHz	7.5 mm	Not Qualified	10 ms	I2C	524288 bit	1.8 V		e0			.000001 Amp	10.3 mm
M24512-RMJ5	STMicroelectronics	EEPROM	OTHER	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	.8 mA	65536 words	2.5	2/3.3	8	SMALL OUTLINE	SOP16,.4	EEPROMs	40	1.27 mm	85 Cel		64KX8	64K	-20 Cel	TIN LEAD	1010DDDR	DUAL	HARDWARE	R-PDSO-G16		3.6 V	2.65 mm	100000 Write/Erase Cycles	.1 MHz	7.5 mm	Not Qualified	10 ms	I2C	524288 bit	1.8 V		e0			.000001 Amp	10.3 mm
M24512-SMJ5T	STMicroelectronics	EEPROM	OTHER	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		65536 words	2.5		8	SMALL OUTLINE				1.27 mm	85 Cel		64KX8	64K	-20 Cel			DUAL		R-PDSO-G16		3.6 V	2.65 mm		.4 MHz	7.5 mm	Not Qualified	10 ms	I2C	524288 bit	1.8 V						10.3 mm
M24512-WMJ5	STMicroelectronics	EEPROM	OTHER	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	1 mA	65536 words	3.3	3/5	8	SMALL OUTLINE	SOP16,.4	EEPROMs	40	1.27 mm	85 Cel		64KX8	64K	-20 Cel	TIN LEAD	1010DDDR	DUAL	HARDWARE	R-PDSO-G16		5.5 V	2.65 mm	100000 Write/Erase Cycles	.4 MHz	7.5 mm	Not Qualified	10 ms	I2C	524288 bit	2.5 V		e0			.000002 Amp	10.3 mm
M24512-MJ6	STMicroelectronics	EEPROM	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	65536 words	5	5	8	SMALL OUTLINE	SOP16,.4	EEPROMs	40	1.27 mm	85 Cel		64KX8	64K	-40 Cel	TIN LEAD	1010DDDR	DUAL	HARDWARE	R-PDSO-G16		5.5 V	2.65 mm	100000 Write/Erase Cycles	.4 MHz	7.5 mm	Not Qualified	10 ms	I2C	524288 bit	4.5 V		e0			.00001 Amp	10.3 mm
M24512-WMJ6T	STMicroelectronics	EEPROM	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	1 mA	65536 words	3.3	3/5	8	SMALL OUTLINE	SOP16,.4	EEPROMs	40	1.27 mm	85 Cel		64KX8	64K	-40 Cel	TIN LEAD	1010DDDR	DUAL	HARDWARE	R-PDSO-G16		5.5 V	2.65 mm	100000 Write/Erase Cycles	.4 MHz	7.5 mm	Not Qualified	10 ms	I2C	524288 bit	2.5 V		e0			.000002 Amp	10.3 mm
M24512-SMJ5	STMicroelectronics	EEPROM	OTHER	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		65536 words	2.5		8	SMALL OUTLINE				1.27 mm	85 Cel		64KX8	64K	-20 Cel			DUAL		R-PDSO-G16		3.6 V	2.65 mm		.4 MHz	7.5 mm	Not Qualified	10 ms	I2C	524288 bit	1.8 V						10.3 mm
M24512-WMJ5T	STMicroelectronics	EEPROM	OTHER	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	1 mA	65536 words	3.3	3/5	8	SMALL OUTLINE	SOP16,.4	EEPROMs	40	1.27 mm	85 Cel		64KX8	64K	-20 Cel	TIN LEAD	1010DDDR	DUAL	HARDWARE	R-PDSO-G16		5.5 V	2.65 mm	100000 Write/Erase Cycles	.4 MHz	7.5 mm	Not Qualified	10 ms	I2C	524288 bit	2.5 V		e0			.000002 Amp	10.3 mm
M24512-MJ6T	STMicroelectronics	EEPROM	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	65536 words	5	5	8	SMALL OUTLINE	SOP16,.4	EEPROMs	40	1.27 mm	85 Cel		64KX8	64K	-40 Cel	TIN LEAD	1010DDDR	DUAL	HARDWARE	R-PDSO-G16		5.5 V	2.65 mm	100000 Write/Erase Cycles	.4 MHz	7.5 mm	Not Qualified	10 ms	I2C	524288 bit	4.5 V		e0			.00001 Amp	10.3 mm
M24512-MJ5	STMicroelectronics	EEPROM	OTHER	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	65536 words	5	5	8	SMALL OUTLINE	SOP16,.4	EEPROMs	40	1.27 mm	85 Cel		64KX8	64K	-20 Cel	TIN LEAD	1010DDDR	DUAL	HARDWARE	R-PDSO-G16		5.5 V	2.65 mm	100000 Write/Erase Cycles	.4 MHz	7.5 mm	Not Qualified	10 ms	I2C	524288 bit	4.5 V		e0			.00001 Amp	10.3 mm
M24512-WMJ6	STMicroelectronics	EEPROM	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	1 mA	65536 words	3.3	3/5	8	SMALL OUTLINE	SOP16,.4	EEPROMs	40	1.27 mm	85 Cel		64KX8	64K	-40 Cel	TIN LEAD	1010DDDR	DUAL	HARDWARE	R-PDSO-G16		5.5 V	2.65 mm	100000 Write/Erase Cycles	.4 MHz	7.5 mm	Not Qualified	10 ms	I2C	524288 bit	2.5 V		e0			.000002 Amp	10.3 mm
PCA8582BT	NXP Semiconductors	EEPROM	AUTOMOTIVE	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		256 words	5		8	SMALL OUTLINE				1.27 mm	125 Cel		256X8	256	-40 Cel			DUAL		R-PDSO-G16		5.5 V	2.65 mm		.1 MHz	7.5 mm	Not Qualified	40 ms	I2C	2048 bit	4.5 V	I2C BUS INTERFACE; FMAX IS 100KHZ					10.3 mm
PCF8582ATD	NXP Semiconductors	EEPROM	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		256 words	5		8	SMALL OUTLINE			10	1.27 mm	85 Cel		256X8	256	-40 Cel			DUAL		R-PDSO-G16		5.5 V	2.65 mm		.1 MHz	7.5 mm	Not Qualified		I2C	2048 bit	4.5 V	10K ERASE/WRITE CYCLES; DATA RETENTION = 10 YEARS					10.3 mm
PCF8598T	NXP Semiconductors	EEPROM	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		1024 words	5		8	SMALL OUTLINE				1.27 mm	85 Cel		1KX8	1K	-40 Cel			DUAL		R-PDSO-G16		6 V	2.65 mm		.1 MHz	7.5 mm	Not Qualified	25 ms	I2C	8192 bit	2.5 V	I2C BUS INTERFACE; PAGE WRITE; FMAX IS 100KHZ					10.3 mm
PCF8582CT	NXP Semiconductors	EEPROM	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		256 words	5		8	SMALL OUTLINE				1.27 mm	85 Cel		256X8	256	-40 Cel			DUAL		R-PDSO-G16		6 V	2.65 mm		.1 MHz	7.5 mm	Not Qualified	25 ms	I2C	2048 bit	2.5 V	I2C BUS INTERFACE; FMAX IS 100KHZ					10.3 mm
PCF8582AT	NXP Semiconductors	EEPROM	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		256 words	5		8	SMALL OUTLINE				1.27 mm	85 Cel		256X8	256	-40 Cel			DUAL		R-PDSO-G16		5.5 V	2.65 mm		.1 MHz	7.5 mm	Not Qualified	25 ms	I2C	2048 bit	4.5 V	I2C BUS INTERFACE; FMAX IS 100KHZ					10.3 mm

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.