2 EEPROM 54

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	I2C Control Byte	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
DS24B33G+T&R	Analog Devices	EEPROM	INDUSTRIAL	2	VBCC	SQUARE	UNSPECIFIED	YES	1	CMOS		BUTT	SERIAL	ASYNCHRONOUS		4096 words		4.5		1	CHIP CARRIER, VERY THIN PROFILE					85 Cel			4KX1	4K	-40 Cel		NICKEL PALLADIUM GOLD		BOTTOM			S-XBCC-B2		5.25 V	1 mm			6 mm			1-WIRE	4096 bit	2.8 V			e4				6 mm
DS24B33G+U	Analog Devices	EEPROM CARD	INDUSTRIAL	2			PLASTIC/EPOXY	YES					SERIAL			512 words			3/5	8		SURF MNT 2,.25SQ	EEPROMs			85 Cel			512X8	512	-40 Cel		NICKEL PALLADIUM GOLD						1			50000 Write/Erase Cycles			Not Qualified			4096 bit				e4						2.7
DS2431G+T&R	Analog Devices	EEPROM	INDUSTRIAL	2	VBCC	SQUARE	UNSPECIFIED	YES	1	CMOS		BUTT	SERIAL	ASYNCHRONOUS		1024 words		3.3	3/5	1	CHIP CARRIER, VERY THIN PROFILE	SURF MNT 2,.25SQ	EEPROMs	40		85 Cel	NO	OPEN-DRAIN	1KX1	1K	-40 Cel	NO	NICKEL PALLADIUM GOLD		BOTTOM		HARDWARE	S-XBCC-B2		5.25 V	1 mm	50000 Write/Erase Cycles		6 mm	Not Qualified		1-WIRE	1024 bit	2.8 V	MEMORY ORGANIZED AS FOUR PAGES OF 256 BITS		e4				6 mm			NO
DS2431GA+T&R	Analog Devices	EEPROM	INDUSTRIAL	2	VBCC	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		BUTT	SERIAL	ASYNCHRONOUS		1024 words		3.3	3/5	1	CHIP CARRIER, VERY THIN PROFILE	SURF MNT 2,.14X.25	EEPROMs	40		85 Cel	NO	OPEN-DRAIN	1KX1	1K	-40 Cel	NO	NICKEL PALLADIUM GOLD		BOTTOM		HARDWARE	R-XBCC-B2		5.25 V	.8 mm	50000 Write/Erase Cycles		3.5 mm	Not Qualified		1-WIRE	1024 bit	2.8 V	MEMORY ORGANIZED AS FOUR PAGES OF 256 BITS		e4				6.5 mm			NO
DS2431GB+T	Analog Devices	EEPROM	INDUSTRIAL	2			PLASTIC/EPOXY	YES	1	CMOS			SERIAL	ASYNCHRONOUS		256 words		3.3	3/5	4		SURF MNT 2,.14X.2	EEPROMs	40		85 Cel	NO	OPEN-DRAIN	256X4	256	-40 Cel	NO	NICKEL PALLADIUM GOLD				HARDWARE			5.25 V		50000 Write/Erase Cycles			Not Qualified		1-WIRE	1024 bit	2.8 V	MEMORY ORGANIZED AS FOUR PAGES OF 256 BITS		e4							NO
DS2431GA+U	Analog Devices	EEPROM	INDUSTRIAL	2	VBCC	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		BUTT	SERIAL	ASYNCHRONOUS		1024 words		3.3	3/5	1	CHIP CARRIER, VERY THIN PROFILE	SURF MNT 2,.14X.25	EEPROMs	40		85 Cel	NO	OPEN-DRAIN	1KX1	1K	-40 Cel	NO	NICKEL GOLD PALLADIUM		BOTTOM		HARDWARE	R-XBCC-B2		5.25 V	.8 mm	50000 Write/Erase Cycles		3.5 mm	Not Qualified		1-WIRE	1024 bit	2.8 V	MEMORY ORGANIZED AS FOUR PAGES OF 256 BITS						6.5 mm			NO
DS2431G+U	Analog Devices	EEPROM	INDUSTRIAL	2	VBCC	SQUARE	UNSPECIFIED	YES	1	CMOS		BUTT	SERIAL	ASYNCHRONOUS		1024 words		3.3	3/5	1	CHIP CARRIER, VERY THIN PROFILE	SURF MNT 2,.25SQ	EEPROMs	40		85 Cel	NO	OPEN-DRAIN	1KX1	1K	-40 Cel	NO	NICKEL PALLADIUM GOLD		BOTTOM		HARDWARE	S-XBCC-B2	1	5.25 V	1 mm	50000 Write/Erase Cycles		6 mm	Not Qualified		1-WIRE	1024 bit	2.8 V	MEMORY ORGANIZED AS FOUR PAGES OF 256 BITS		e4				6 mm			NO
DS1990A-F5	Maxim Integrated	EEPROM	INDUSTRIAL	2		ROUND	METAL	YES	1	MOS		NO LEAD	SERIAL	ASYNCHRONOUS		64 words		3.3	3/5	1	DISK BUTTON	BUTTON,.68IN	Other Memory ICs			85 Cel			64X1	64	-40 Cel		TIN LEAD		END			O-MEDB-N2	1	6 V					Not Qualified		1-WIRE	64 bit	2.8 V			e0					15000 ns
DS1990A-F5#	Maxim Integrated	EEPROM	INDUSTRIAL	2		ROUND	METAL	YES	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS		64 words				1	DISK BUTTON					85 Cel			64X1	64	-40 Cel		MATTE TIN		END			O-MEDB-N2		6 V					Not Qualified		1-WIRE	64 bit	2.8 V			e3
DS1990A-F5+	Analog Devices	EEPROM	INDUSTRIAL	2		ROUND	METAL	YES	1	MOS		NO LEAD	SERIAL	ASYNCHRONOUS		64 words		3.3	3/5	1	DISK BUTTON	BUTTON,.68IN	Other Memory ICs			85 Cel			64X1	64	-40 Cel		Matte Tin (Sn) - annealed		END			O-MEDB-N2		6 V					Not Qualified		1-WIRE	64 bit	2.8 V			e3					15000 ns
AT21CS01-MSHM10-T	Microchip Technology	EEPROM	INDUSTRIAL	2	VSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	.5 mA	128 words				8	CHIP CARRIER, VERY THIN PROFILE	SURF MNT 2,.14X.2		100	2 mm	85 Cel			128X8	128	-40 Cel			1010DDDR	SINGLE	1		R-PSSO-N2		3.6 V	.4 mm	1000000 Write/Erase Cycles		3.5 mm		5 ms	1-WIRE	1024 bit	1.7 V		8		NOT SPECIFIED	NOT SPECIFIED	.0000025 Amp	5 mm
DS1961S-F5#	Maxim Integrated	EEPROM	COMMERCIAL EXTENDED	2		ROUND	METAL	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		1024 words		3.3		1	DISK BUTTON					85 Cel			1KX1	1K	-20 Cel		MATTE TIN		END			O-MEDB-N2		5.25 V					Not Qualified		1-WIRE	1024 bit	2.8 V			e3
DS1961S-F5	Maxim Integrated	EEPROM	OTHER	2		ROUND	METAL	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		1024 words			3/5	1	DISK BUTTON	BUTTON,.68IN	SRAMs			85 Cel			1KX1	1K	-20 Cel		TIN LEAD		END			O-MEDB-N2	1	5.25 V					Not Qualified		1-WIRE	1024 bit	2.8 V			e0	20	240
DS1961S-F5+	Analog Devices	EEPROM	OTHER	2		ROUND	METAL	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		1024 words				1	DISK BUTTON					85 Cel			1KX1	1K	-20 Cel		Matte Tin (Sn) - annealed		END			O-MEDB-N2		5.25 V					Not Qualified		1-WIRE	1024 bit	2.8 V			e3
DS2431GB+U	Analog Devices	EEPROM	INDUSTRIAL	2			PLASTIC/EPOXY	YES	1	CMOS			SERIAL	ASYNCHRONOUS		256 words		3.3	3/5	4		SURF MNT 2,.14X.2	EEPROMs	40		85 Cel	NO	OPEN-DRAIN	256X4	256	-40 Cel	NO	NICKEL PALLADIUM GOLD				HARDWARE			5.25 V		50000 Write/Erase Cycles			Not Qualified		1-WIRE	1024 bit	2.8 V	MEMORY ORGANIZED AS FOUR PAGES OF 256 BITS		e4							NO
DS2431G+	Analog Devices	EEPROM	INDUSTRIAL	2	VBCC	SQUARE	UNSPECIFIED	YES	1	CMOS		BUTT	SERIAL	ASYNCHRONOUS		1024 words		3.3	3/5	1	CHIP CARRIER, VERY THIN PROFILE	SURF MNT 2,.25SQ	EEPROMs	40		85 Cel			1KX1	1K	-40 Cel		NICKEL PALLADIUM GOLD		BOTTOM			S-XBCC-B2		5.25 V	.95 mm	50000 Write/Erase Cycles		6 mm	Not Qualified		1-WIRE	1024 bit	2.8 V	MEMORY ORGANIZED AS FOUR PAGES OF 256 BITS		e4				6 mm
DS1977-F5	Maxim Integrated	EEPROM	INDUSTRIAL	2		ROUND	METAL	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		262144 words		3.3		1	DISK BUTTON					85 Cel			256KX1	256K	-40 Cel		TIN LEAD		END			O-MEDB-N2	1	5.25 V					Not Qualified		1-WIRE	262144 bit	2.8 V			e0
DS1977-F5+	Maxim Integrated	EEPROM	INDUSTRIAL	2		ROUND	METAL	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	7 mA	262144 words		3.3	3/5	1	DISK BUTTON	BUTTON,.68IN	EEPROMs	10		85 Cel			256KX1	256K	-40 Cel		MATTE TIN		END			O-MEDB-N2		5.25 V		100000 Write/Erase Cycles			Not Qualified		1-WIRE	262144 bit	2.8 V			e3
DS1977-F5#	Analog Devices	EEPROM	INDUSTRIAL	2		ROUND	METAL	YES	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS		32768 words		5		1	DISK BUTTON					85 Cel			32KX1	32K	-40 Cel		Matte Tin (Sn) - annealed		END			O-MEDB-N2		5.25 V					Not Qualified		1-WIRE	32768 bit	2.8 V			e3
AT21CS01-MSHM11-T	Microchip Technology	EEPROM	INDUSTRIAL	2	VSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	NO LEAD	SERIAL	ASYNCHRONOUS	.5 mA	128 words				8	CHIP CARRIER, VERY THIN PROFILE	SURF MNT 2,.14X.2		100	2 mm	85 Cel		OPEN-DRAIN	128X8	128	-40 Cel				SINGLE	1		R-PSSO-N2		3.6 V	.4 mm	1000000 Write/Erase Cycles		3.5 mm		5 ms	1-WIRE	1024 bit	1.7 V						.0000025 Amp	5 mm
DS1971-F5	Maxim Integrated	EEPROM	INDUSTRIAL	2		ROUND	METAL	YES	1	MOS		NO LEAD	SERIAL	ASYNCHRONOUS		32 words		5	3/5	8	DISK BUTTON	BUTTON,.68IN	EEPROMs			85 Cel			32X8	32	-40 Cel		TIN LEAD		END			O-MEDB-N2	1	6 V			.0163 MHz		Not Qualified		1-WIRE	256 bit	2.8 V	MICROLAN COMPATIBLE		e0
DS1971-F5+	Analog Devices	EEPROM	INDUSTRIAL	2		ROUND	METAL	YES	1	MOS		NO LEAD	SERIAL	ASYNCHRONOUS		32 words		5		8	DISK BUTTON					85 Cel			32X8	32	-40 Cel		Matte Tin (Sn) - annealed		END			O-MEDB-N2		6 V			.0163 MHz		Not Qualified		1-WIRE	256 bit	2.8 V	MICROLAN COMPATIBLE		e3
AT21CS01-MSHM15-T	Microchip Technology	EEPROM	INDUSTRIAL	2	VSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	TS 16949	NO LEAD	SERIAL	ASYNCHRONOUS	.5 mA	128 words				8	SMALL OUTLINE, VERY THIN PROFILE	SURF MNT 2,.14X.2		100	2 mm	85 Cel		OPEN-DRAIN	128X8	128	-40 Cel				DUAL	1		R-XDSO-N2		3.6 V	.4 mm	1000000 Write/Erase Cycles		3.5 mm		5 ms	1-WIRE	1024 bit	1.7 V						.0000025 Amp	5 mm
DS1973-F5	Maxim Integrated	EEPROM	INDUSTRIAL	2		ROUND	METAL	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		512 words				8	DISK BUTTON					85 Cel			512X8	512	-40 Cel		TIN LEAD		END			O-MEDB-N2	1	6 V			.0163 MHz		Not Qualified		1-WIRE	4096 bit	2.8 V			e0
DS1973-F5+	Analog Devices	EEPROM	INDUSTRIAL	2		ROUND	METAL	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		512 words				8	DISK BUTTON					85 Cel			512X8	512	-40 Cel		Matte Tin (Sn) - annealed		END			O-MEDB-N2		6 V			.0163 MHz		Not Qualified		1-WIRE	4096 bit	2.8 V			e3
AT21CS11-MSH10-T	Microchip Technology	EEPROM	INDUSTRIAL	2	VSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	TS 16949	NO LEAD	SERIAL	ASYNCHRONOUS	.5 mA	128 words				8	SMALL OUTLINE, VERY THIN PROFILE	SURF MNT 2,.14X.2		100	2 mm	85 Cel		OPEN-DRAIN	128X8	128	-40 Cel				DUAL	1		R-XDSO-N2		4.5 V	.4 mm	1000000 Write/Erase Cycles		3.5 mm		5 ms	1-WIRE	1024 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	.000003 Amp	5 mm
DS1990R-F5	Maxim Integrated	EEPROM	INDUSTRIAL	2		ROUND	METAL	YES	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS		64 words		3.3		1	DISK BUTTON					85 Cel			64X1	64	-40 Cel		TIN LEAD		END			O-MEDB-N2		6 V					Not Qualified		1-WIRE	64 bit	2.8 V			e0
DS1990R-F5#	Analog Devices	EEPROM	INDUSTRIAL	2		ROUND	METAL	YES	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS		64 words		5		1	DISK BUTTON					85 Cel			64X1	64	-40 Cel				END			O-MEDB-N2		6 V					Not Qualified		1-WIRE	64 bit	2.8 V				NOT SPECIFIED	NOT SPECIFIED
DS28E01-100+	Analog Devices	EEPROM	INDUSTRIAL	2		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		THROUGH-HOLE	SERIAL	ASYNCHRONOUS		1024 words			3/5	1	CYLINDRICAL	SIP2/3,.1,50	EEPROMs	40		85 Cel			1KX1	1K	-40 Cel		Matte Tin (Sn) - annealed		BOTTOM			R-XBCY-T2		5.25 V		50000 Write/Erase Cycles			Not Qualified		1-WIRE	1024 bit	2.8 V	MEMORY ORGANIZED AS FOUR PAGES OF 256 BITS		e3		250
AT21CS11-MSH10-B	Microchip Technology	EEPROM	INDUSTRIAL	2	VSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	TS 16949	NO LEAD	SERIAL	ASYNCHRONOUS	.5 mA	128 words				8	SMALL OUTLINE, VERY THIN PROFILE	SURF MNT 2,.14X.2		100	2 mm	85 Cel		OPEN-DRAIN	128X8	128	-40 Cel				DUAL	1		R-XDSO-N2		4.5 V	.4 mm	1000000 Write/Erase Cycles		3.5 mm		5 ms	1-WIRE	1024 bit	2.7 V						.000003 Amp	5 mm
DS2433G+T&R	Maxim Integrated	EEPROM	INDUSTRIAL	2	QCCN	SQUARE	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS		4096 words		5	3/5	1	CHIP CARRIER	SURF MNT 2,.25SQ	EEPROMs			85 Cel			4KX1	4K	-40 Cel		NICKEL PALLADIUM GOLD		QUAD			S-XQCC-N2		6 V	1 mm	50000 Write/Erase Cycles		6 mm	Not Qualified		1-WIRE	4096 bit	2.8 V			e4				6 mm
DS1973-F3	Maxim Integrated	EEPROM	INDUSTRIAL	2		ROUND	METAL	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		512 words				8	DISK BUTTON					85 Cel			512X8	512	-40 Cel		TIN LEAD		END			O-MEDB-N2	1	6 V			.0163 MHz		Not Qualified		1-WIRE	4096 bit	2.8 V			e0
DS1973-F3+	Analog Devices	EEPROM	INDUSTRIAL	2		ROUND	METAL	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		512 words				8	DISK BUTTON					85 Cel			512X8	512	-40 Cel		Matte Tin (Sn) - annealed		END			O-MEDB-N2		6 V			.0163 MHz		Not Qualified		1-WIRE	4096 bit	2.8 V			e3
DS28E25G+T	Analog Devices	EEPROM	INDUSTRIAL	2	VBCC	SQUARE	UNSPECIFIED	YES	1	CMOS		BUTT	SERIAL	ASYNCHRONOUS		4096 words		3.3		1	CHIP CARRIER, VERY THIN PROFILE					85 Cel			4KX1	4K	-40 Cel		NICKEL GOLD PALLADIUM		BOTTOM			S-XBCC-B2		3.63 V	1 mm			6 mm			1-WIRE	4096 bit	2.97 V							6 mm
DS28E25+	Analog Devices	EEPROM	INDUSTRIAL	2		ROUND	UNSPECIFIED	NO	1	CMOS		THROUGH-HOLE	SERIAL	ASYNCHRONOUS		4096 words		3.3		1	CYLINDRICAL					85 Cel			4KX1	4K	-40 Cel		Matte Tin (Sn) - annealed		BOTTOM			O-XBCY-T2		3.63 V							1-WIRE	4096 bit	2.97 V			e3		250
DS1985-F5+	Analog Devices	EEPROM	INDUSTRIAL	2		ROUND	METAL	YES	1	MOS		NO LEAD	SERIAL	ASYNCHRONOUS		16384 words	COMMON	5	3/5	1	DISK BUTTON	BUTTON,.68IN	Other Memory ICs			85 Cel			16KX1	16K	-40 Cel		Matte Tin (Sn) - annealed		END			O-MEDB-N2		6 V					Not Qualified		1-WIRE	16384 bit	2.8 V	MICROLAN COMPATIBLE		e3					15000 ns
DS1961S-F3+	Analog Devices	EEPROM	OTHER	2		ROUND	METAL	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		1024 words				1	DISK BUTTON					85 Cel			1KX1	1K	-20 Cel		Matte Tin (Sn) - annealed		END			O-MEDB-N2		5.25 V					Not Qualified		1-WIRE	1024 bit	2.8 V			e3
DS1972-F5+	Analog Devices	EEPROM	INDUSTRIAL	2		ROUND	METAL	YES	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS		1024 words		5	3/5	1	DISK BUTTON	BUTTON,.68IN	EEPROMs	10		85 Cel			1KX1	1K	-40 Cel		Matte Tin (Sn) - annealed		END			O-MEDB-N2		5.25 V		50000 Write/Erase Cycles			Not Qualified		1-WIRE	1024 bit	2.8 V			e3
DS1990A-F3+	Analog Devices	EEPROM	INDUSTRIAL	2		ROUND	METAL	YES	1	MOS		NO LEAD	SERIAL	ASYNCHRONOUS		64 words		3.3	3/5	1	DISK BUTTON	BUTTON,.68IN	Other Memory ICs			85 Cel			64X1	64	-40 Cel		Matte Tin (Sn) - annealed		END			O-MEDB-N2		6 V					Not Qualified		1-WIRE	64 bit	2.8 V			e3					15000 ns
DS1972-F3+	Analog Devices	EEPROM	INDUSTRIAL	2		ROUND	METAL	YES	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS		1024 words		5	3/5	1	DISK BUTTON	BUTTON,.68IN	EEPROMs	10		85 Cel			1KX1	1K	-40 Cel		Matte Tin (Sn) - annealed		END			O-MEDB-N2		5.25 V		50000 Write/Erase Cycles			Not Qualified		1-WIRE	1024 bit	2.8 V			e3
DS1985-F3+	Analog Devices	EEPROM	INDUSTRIAL	2		ROUND	METAL	YES	1	MOS		NO LEAD	SERIAL	ASYNCHRONOUS		16384 words	COMMON	5	3/5	1	DISK BUTTON	BUTTON,.68IN	Other Memory ICs			85 Cel			16KX1	16K	-40 Cel		Matte Tin (Sn) - annealed		END			O-MEDB-N2		6 V					Not Qualified		1-WIRE	16384 bit	2.8 V	MICROLAN COMPATIBLE		e3					15000 ns
DS28E15G+	Analog Devices	EEPROM	INDUSTRIAL	2	BCC	SQUARE	UNSPECIFIED	YES	1	CMOS		BUTT	SERIAL	ASYNCHRONOUS		512 words		3.3		1	CHIP CARRIER				3 mm	85 Cel			512X1	512	-40 Cel				BOTTOM			S-XBCC-B2		3.63 V	.8 mm			3.5 mm			1-WIRE	512 bit	2.97 V				NOT SPECIFIED	NOT SPECIFIED		6.5 mm
DS28E15G+T	Analog Devices	EEPROM	INDUSTRIAL	2	BCC	SQUARE	UNSPECIFIED	YES	1	CMOS		BUTT	SERIAL	ASYNCHRONOUS		512 words		3.3		1	CHIP CARRIER				3 mm	85 Cel			512X1	512	-40 Cel		NICKEL GOLD PALLADIUM		BOTTOM			S-XBCC-B2		3.63 V	.8 mm			3.5 mm			1-WIRE	512 bit	2.97 V							6.5 mm
DS1971-F3+	Analog Devices	EEPROM	INDUSTRIAL	2		ROUND	METAL	YES	1	MOS		NO LEAD	SERIAL	ASYNCHRONOUS		32 words		5		8	DISK BUTTON					85 Cel			32X8	32	-40 Cel		Matte Tin (Sn) - annealed		END			O-MEDB-N2		6 V			.0163 MHz		Not Qualified		1-WIRE	256 bit	2.8 V	MICROLAN COMPATIBLE		e3
DS1990R-F3#	Analog Devices	EEPROM	INDUSTRIAL	2		ROUND	METAL	YES	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS		64 words		5		1	DISK BUTTON					85 Cel			64X1	64	-40 Cel				END			O-MEDB-N2		6 V					Not Qualified		1-WIRE	64 bit	2.8 V				NOT SPECIFIED	NOT SPECIFIED
DS28E05GB+T	Analog Devices	EEPROM	INDUSTRIAL	2	BCC	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		BUTT	SERIAL	ASYNCHRONOUS		112 words				8	CHIP CARRIER				2.1 mm	85 Cel			112X8	112	-40 Cel		NICKEL PALLADIUM GOLD		BOTTOM			R-XBCC-B2		3.63 V	.4 mm			3.5 mm			1-WIRE	896 bit	1.71 V			e4				5 mm
DS28E01G-100+T&R	Maxim Integrated	EEPROM	INDUSTRIAL	2	VBCC	SQUARE	UNSPECIFIED	YES	1	CMOS		BUTT	SERIAL	ASYNCHRONOUS		1024 words			3/5	1	CHIP CARRIER, VERY THIN PROFILE	SURF MNT 2,.25SQ	EEPROMs	40		85 Cel			1KX1	1K	-40 Cel		NICKEL PALLADIUM GOLD		BOTTOM			S-XBCC-B2		5.25 V	1 mm	50000 Write/Erase Cycles		6 mm	Not Qualified		1-WIRE	1024 bit	2.8 V	MEMORY ORGANIZED AS FOUR PAGES OF 256 BITS		e4				6 mm
DS1961S-F3#	Maxim Integrated	EEPROM	OTHER	2		ROUND	METAL	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		1024 words				1	DISK BUTTON					85 Cel			1KX1	1K	-20 Cel		MATTE TIN		END			O-MEDB-N2		5.25 V					Not Qualified		1-WIRE	1024 bit	2.8 V			e3

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.