3 EEPROM 45

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	I2C Control Byte	Ready or Busy	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Programming Voltage (V)	Data Polling
DS24B33+T&R	Analog Devices	EEPROM	INDUSTRIAL	3	TO-92	ROUND	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	ASYNCHRONOUS		4096 words			3/5	1	CYLINDRICAL	SIP3,.1,50	EEPROMs		1.27 mm	85 Cel			4KX1	4K	-40 Cel		Matte Tin (Sn) - annealed			BOTTOM			O-PBCY-T3		5.25 V		50000 Write/Erase Cycles			Not Qualified		1-WIRE	4096 bit	2.8 V		e3	20	250
DS24B33+	Analog Devices	EEPROM	INDUSTRIAL	3	TO-92	ROUND	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	ASYNCHRONOUS		4096 words			3/5	1	CYLINDRICAL	SIP3,.1,50	EEPROMs		1.27 mm	85 Cel			4KX1	4K	-40 Cel		Matte Tin (Sn) - annealed			BOTTOM			O-PBCY-T3		5.25 V		50000 Write/Erase Cycles			Not Qualified		1-WIRE	4096 bit	2.8 V		e3	20	250
DS2431/TR	Dallas Semiconductor	EEPROM	INDUSTRIAL	3		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	ASYNCHRONOUS		1024 words	3.3		3/5	1	CYLINDRICAL	SIP3,.1,50	EEPROMs	40	1.27 mm	85 Cel	NO	OPEN-DRAIN	1KX1	1K	-40 Cel	NO	Matte Tin (Sn)			BOTTOM		HARDWARE	R-PBCY-T3		5.25 V		50000 Write/Erase Cycles			Not Qualified		1-WIRE	1024 bit	2.8 V	MEMORY ORGANIZED AS FOUR PAGES OF 256 BITS	e3	NOT SPECIFIED	250				NO
DS2431/T&R	Maxim Integrated	EEPROM	INDUSTRIAL	3		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	ASYNCHRONOUS		1024 words	3.3		3/5	1	CYLINDRICAL	SIP3,.1,50	EEPROMs	10	1.27 mm	85 Cel			1KX1	1K	-40 Cel		TIN LEAD			BOTTOM			R-PBCY-T3		5.25 V		50000 Write/Erase Cycles			Not Qualified		1-WIRE	1024 bit	2.8 V	MEMORY ORGANIZED AS FOUR PAGES OF 256 BITS	e0
DS2431+T&R	Analog Devices	EEPROM	INDUSTRIAL	3		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	ASYNCHRONOUS		1024 words	3.3		3/5	1	CYLINDRICAL	SIP3,.1,50	EEPROMs	40	1.27 mm	85 Cel	NO	OPEN-DRAIN	1KX1	1K	-40 Cel	NO	Matte Tin (Sn) - annealed			BOTTOM		HARDWARE	R-PBCY-T3		5.25 V		50000 Write/Erase Cycles			Not Qualified		1-WIRE	1024 bit	2.8 V	MEMORY ORGANIZED AS FOUR PAGES OF 256 BITS	e3		250				NO
DS2431	Maxim Integrated	EEPROM	INDUSTRIAL	3		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	ASYNCHRONOUS		1024 words	3.3		3/5	1	CYLINDRICAL	SIP3,.1,50	EEPROMs	10	1.27 mm	85 Cel			1KX1	1K	-40 Cel		Tin/Lead (Sn/Pb)			BOTTOM			R-PBCY-T3		5.25 V		50000 Write/Erase Cycles			Not Qualified		1-WIRE	1024 bit	2.8 V	MEMORY ORGANIZED AS FOUR PAGES OF 256 BITS	e0	20	240
DS2431+	Analog Devices	EEPROM	INDUSTRIAL	3		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	ASYNCHRONOUS		1024 words	3.3		3/5	1	CYLINDRICAL	SIP3,.1,50	EEPROMs	40	1.27 mm	85 Cel	NO	OPEN-DRAIN	1KX1	1K	-40 Cel	NO	Matte Tin (Sn) - annealed			BOTTOM		HARDWARE	R-PBCY-T3		5.25 V		50000 Write/Erase Cycles			Not Qualified		1-WIRE	1024 bit	2.8 V	MEMORY ORGANIZED AS FOUR PAGES OF 256 BITS	e3		250				NO
AT21CS01-STUM10-T	Microchip Technology	EEPROM	INDUSTRIAL	3	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	.5 mA	128 words	1.8			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TO-236		100	.95 mm	85 Cel		OPEN-DRAIN	128X8	128	-40 Cel		MATTE TIN	1010DDDR		DUAL	1		R-PDSO-G3	1	3.6 V	1.12 mm	1000000 Write/Erase Cycles		1.3 mm		5 ms	I2C	1024 bit	1.7 V		e3	40	260	.0000025 Amp	2.9 mm	1.8
DS28EC20+T	Analog Devices	EEPROM	INDUSTRIAL	3		ROUND	UNSPECIFIED	NO	1	CMOS		WIRE	SERIAL	ASYNCHRONOUS	.9 mA	20480 words			5	1	CYLINDRICAL	SIP3,.1,50	EEPROMs	40	1.27 mm	85 Cel			20KX1	2K	-40 Cel		Matte Tin (Sn) - annealed			BOTTOM			O-XBCY-W3		5.25 V		200000 Write/Erase Cycles			Not Qualified		1-WIRE	20480 bit	4 V		e3		250
DS28EC20+	Analog Devices	EEPROM	INDUSTRIAL	3		ROUND	UNSPECIFIED	NO	1	CMOS		WIRE	SERIAL	ASYNCHRONOUS	.9 mA	20480 words			5	1	CYLINDRICAL	SIP3,.1,50	EEPROMs	40	1.27 mm	85 Cel			20KX1	2K	-40 Cel		Matte Tin (Sn) - annealed			BOTTOM			O-XBCY-W3		5.25 V		200000 Write/Erase Cycles			Not Qualified		1-WIRE	20480 bit	4 V		e3		250
DS28E07+	Analog Devices	EEPROM	INDUSTRIAL	3	TO-92	ROUND	UNSPECIFIED	NO	1	CMOS		THROUGH-HOLE	SERIAL	ASYNCHRONOUS		1024 words				1	CYLINDRICAL			10	2.6 mm	85 Cel	NO	OPEN-DRAIN	1KX1	1K	-40 Cel		Matte Tin (Sn) - annealed			BOTTOM		HARDWARE	O-XBCY-T3		5.25 V		10000 Write/Erase Cycles					1-WIRE	1024 bit	3 V		e3		250			3
DS28E05R+T	Analog Devices	EEPROM	INDUSTRIAL	3	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	ASYNCHRONOUS		64 words	3.3			1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.95 mm	85 Cel			64X1	64	-40 Cel		Matte Tin (Sn) - annealed			DUAL			R-PDSO-G3	1	3.63 V	1.12 mm			1.3 mm			1-WIRE	64 bit	2.75 V		e3	30	260		2.92 mm
DS2430A/T&R	Maxim Integrated	EEPROM	INDUSTRIAL	3	TO-92	ROUND	PLASTIC/EPOXY	NO	1	MOS		THROUGH-HOLE	SERIAL	ASYNCHRONOUS		256 words	5		3/5	1	CYLINDRICAL	SIP3,.1,50	EEPROMs		1.27 mm	85 Cel			256X1	256	-40 Cel		TIN LEAD			BOTTOM			O-PBCY-T3		6 V		100000 Write/Erase Cycles	.0163 MHz		Not Qualified	10 ms	1-WIRE	256 bit	2.8 V	MICROLAN COMPATIBLE	e0
DS2430A+T&R	Analog Devices	EEPROM	INDUSTRIAL	3	TO-92	ROUND	PLASTIC/EPOXY	NO	1	MOS		THROUGH-HOLE	SERIAL	ASYNCHRONOUS		256 words	5		3/5	1	CYLINDRICAL	SIP3,.1,50	EEPROMs		1.27 mm	85 Cel			256X1	256	-40 Cel		MATTE TIN			BOTTOM			O-PBCY-T3		6 V		100000 Write/Erase Cycles	.0163 MHz		Not Qualified	10 ms	1-WIRE	256 bit	2.8 V	MICROLAN COMPATIBLE	e3		250
DS2430A	Maxim Integrated	EEPROM	INDUSTRIAL	3	TO-92	ROUND	PLASTIC/EPOXY	NO	1	MOS		THROUGH-HOLE	SERIAL	ASYNCHRONOUS		256 words	5		3/5	1	CYLINDRICAL	SIP3,.1,50	EEPROMs		1.27 mm	85 Cel			256X1	256	-40 Cel		TIN LEAD			BOTTOM			O-PBCY-T3		6 V		100000 Write/Erase Cycles	.0163 MHz		Not Qualified	10 ms	1-WIRE	256 bit	2.8 V	MICROLAN COMPATIBLE	e0
DS2430A+	Analog Devices	EEPROM	INDUSTRIAL	3	TO-92	ROUND	PLASTIC/EPOXY	NO	1	MOS		THROUGH-HOLE	SERIAL	ASYNCHRONOUS		256 words	5		3/5	1	CYLINDRICAL	SIP3,.1,50	EEPROMs		1.27 mm	85 Cel			256X1	256	-40 Cel		MATTE TIN			BOTTOM			O-PBCY-T3		6 V		100000 Write/Erase Cycles	.0163 MHz		Not Qualified	10 ms	1-WIRE	256 bit	2.8 V	MICROLAN COMPATIBLE	e3		250
DS28E07+T	Analog Devices	EEPROM	INDUSTRIAL	3	TO-92	ROUND	UNSPECIFIED	NO	1	CMOS		THROUGH-HOLE	SERIAL	ASYNCHRONOUS		1024 words				1	CYLINDRICAL			10	2.6 mm	85 Cel	NO	OPEN-DRAIN	1KX1	1K	-40 Cel		Matte Tin (Sn) - annealed			BOTTOM		HARDWARE	O-XBCY-T3		5.25 V		10000 Write/Erase Cycles					1-WIRE	1024 bit	3 V		e3		250			3
11AA02E48T-I/TT	Microchip Technology	EEPROM	INDUSTRIAL	3	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	5 mA	256 words	2.5		2/5	8	SMALL OUTLINE	TO-236	EEPROMs	200	.95 mm	85 Cel	NO		256X8	256	-40 Cel		MATTE TIN	10100000R		DUAL	1	SOFTWARE	R-PDSO-G3	1	5.5 V	1.12 mm	1000000 Write/Erase Cycles	.1 MHz	1.3 mm	Not Qualified	10 ms	I2C	2048 bit	1.8 V		e3		260	.000001 Amp	2.9 mm	2.5
AT21CS11-STU10-T	Microchip Technology	EEPROM	INDUSTRIAL	3	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	.5 mA	128 words				8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TO-236		100	.95 mm	85 Cel			128X8	128	-40 Cel			1010DDDR		DUAL	1		R-PDSO-G3		4.5 V	1.12 mm	1000000 Write/Erase Cycles		1.3 mm		5 ms	1-WIRE	1024 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	.0000025 Amp	2.9 mm
DS2433+	Maxim Integrated	EEPROM	INDUSTRIAL	3		ROUND	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	ASYNCHRONOUS		4096 words	5		3/5	1	CYLINDRICAL	SIP3,.1,50	EEPROMs		1.27 mm	85 Cel			4KX1	4K	-40 Cel		MATTE TIN			BOTTOM			O-PBCY-T3	1	6 V		50000 Write/Erase Cycles	.0163 MHz		Not Qualified		1-WIRE	4096 bit	2.8 V		e3
DS2433	Maxim Integrated	EEPROM	INDUSTRIAL	3		ROUND	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	ASYNCHRONOUS		4096 words	5		3/5	1	CYLINDRICAL	SIP3,.1,50	EEPROMs		1.27 mm	85 Cel			4KX1	4K	-40 Cel		TIN LEAD			BOTTOM			O-PBCY-T3	1	6 V		50000 Write/Erase Cycles	.0163 MHz		Not Qualified		1-WIRE	4096 bit	2.8 V		e0		245
AT21CS01-STUM17-T	Microchip Technology	EEPROM	INDUSTRIAL	3	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	.5 mA	128 words	1.8			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TO-236		100	.95 mm	85 Cel		OPEN-DRAIN	128X8	128	-40 Cel		MATTE TIN	1010DDDR		DUAL	1		R-PDSO-G3	1	3.6 V	1.12 mm	1000000 Write/Erase Cycles		1.3 mm		5 ms	I2C	1024 bit	1.7 V		e3	40	260	.0000025 Amp	2.9 mm	1.8
11AA010T-I/TT	Microchip Technology	EEPROM	INDUSTRIAL	3	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	5 mA	128 words	5	NO	2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TO-236	EEPROMs	200	.95 mm	85 Cel	NO	TOTEM POLE	128X8	128	-40 Cel		MATTE TIN		NO	DUAL	1	SOFTWARE	R-PDSO-G3	1	5.5 V	1.12 mm	1000000 Write/Erase Cycles	1 MHz	1.3 mm	Not Qualified	10 ms	1-WIRE	1024 bit	1.8 V		e3	40	260	.000005 Amp	2.9 mm
AT21CS01-STUM14-T	Microchip Technology	EEPROM	INDUSTRIAL	3	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	.5 mA	128 words	1.8			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TO-236		100	.95 mm	85 Cel		OPEN-DRAIN	128X8	128	-40 Cel		MATTE TIN	1010DDDR		DUAL	1		R-PDSO-G3	1	3.6 V	1.12 mm	1000000 Write/Erase Cycles		1.3 mm		5 ms	I2C	1024 bit	1.7 V		e3	40	260	.0000025 Amp	2.9 mm	1.8
11AA160T-I/TT	Microchip Technology	EEPROM	INDUSTRIAL	3	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	5 mA	2048 words	5	NO	2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TO-236	EEPROMs	200	.95 mm	85 Cel	NO	TOTEM POLE	2KX8	2K	-40 Cel		MATTE TIN		NO	DUAL	1	SOFTWARE	R-PDSO-G3	1	5.5 V	1.12 mm	1000000 Write/Erase Cycles	1 MHz	1.3 mm	Not Qualified	10 ms	1-WIRE	16384 bit	1.8 V		e3	40	260	.000005 Amp	2.9 mm
AT21CS01-STUM15-T	Microchip Technology	EEPROM	INDUSTRIAL	3	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	.5 mA	128 words	1.8			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TO-236		100	.95 mm	85 Cel		OPEN-DRAIN	128X8	128	-40 Cel		MATTE TIN	1010DDDR		DUAL	1		R-PDSO-G3	1	3.6 V	1.12 mm	1000000 Write/Erase Cycles		1.3 mm		5 ms	I2C	1024 bit	1.7 V		e3	40	260	.0000025 Amp	2.9 mm	1.8
AT21CS01-STUM13-T	Microchip Technology	EEPROM	INDUSTRIAL	3	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	.5 mA	128 words	1.8			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TO-236		100	.95 mm	85 Cel		OPEN-DRAIN	128X8	128	-40 Cel		MATTE TIN	1010DDDR		DUAL	1		R-PDSO-G3	1	3.6 V	1.12 mm	1000000 Write/Erase Cycles		1.3 mm		5 ms	I2C	1024 bit	1.7 V		e3	40	260	.0000025 Amp	2.9 mm	1.8
AT21CS01-STUM16-T	Microchip Technology	EEPROM	INDUSTRIAL	3	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	.5 mA	128 words	1.8			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TO-236		100	.95 mm	85 Cel		OPEN-DRAIN	128X8	128	-40 Cel		MATTE TIN	1010DDDR		DUAL	1		R-PDSO-G3	1	3.6 V	1.12 mm	1000000 Write/Erase Cycles		1.3 mm		5 ms	I2C	1024 bit	1.7 V		e3	40	260	.0000025 Amp	2.9 mm	1.8
11LC160T-I/TT	Microchip Technology	EEPROM	INDUSTRIAL	3	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	5 mA	2048 words	5	NO	3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TO-236	EEPROMs	200	.95 mm	85 Cel	NO	TOTEM POLE	2KX8	2K	-40 Cel		MATTE TIN		NO	DUAL	1	SOFTWARE	R-PDSO-G3	1	5.5 V	1.12 mm	1000000 Write/Erase Cycles	1 MHz	1.3 mm	Not Qualified	10 ms	1-WIRE	16384 bit	2.5 V		e3	40	260	.000005 Amp	2.9 mm
AT21CS01-STUM12-T	Microchip Technology	EEPROM	INDUSTRIAL	3	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	.5 mA	128 words	1.8			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TO-236		100	.95 mm	85 Cel		OPEN-DRAIN	128X8	128	-40 Cel		MATTE TIN	1010DDDR		DUAL	1		R-PDSO-G3	1	3.6 V	1.12 mm	1000000 Write/Erase Cycles		1.3 mm		5 ms	I2C	1024 bit	1.7 V		e3	40	260	.0000025 Amp	2.9 mm	1.8
DS2430AT	Maxim Integrated	EEPROM	INDUSTRIAL	3	TO-92	ROUND	PLASTIC/EPOXY	NO	1	MOS		THROUGH-HOLE	SERIAL	ASYNCHRONOUS		32 words	5		3/5	8	CYLINDRICAL	SIP3,.1,50	EEPROMs		1.27 mm	85 Cel			32X8	32	-40 Cel		TIN LEAD			BOTTOM			O-PBCY-T3		6 V		100000 Write/Erase Cycles	.0163 MHz		Not Qualified	10 ms	1-WIRE	256 bit	2.8 V	MICROLAN COMPATIBLE	e0
AT21CS01-STUM11-T	Microchip Technology	EEPROM	INDUSTRIAL	3	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	.5 mA	128 words	1.8			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TO-236		100	.95 mm	85 Cel		OPEN-DRAIN	128X8	128	-40 Cel		MATTE TIN	1010DDDR		DUAL	1		R-PDSO-G3	1	3.6 V	1.12 mm	1000000 Write/Erase Cycles		1.3 mm		5 ms	I2C	1024 bit	1.7 V		e3	40	260	.0000025 Amp	2.9 mm	1.8
11LC020T-I/TT	Microchip Technology	EEPROM	INDUSTRIAL	3	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	5 mA	256 words	5	NO	3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TO-236	EEPROMs	200	.95 mm	85 Cel	NO	TOTEM POLE	256X8	256	-40 Cel		MATTE TIN		NO	DUAL	1	SOFTWARE	R-PDSO-G3	1	5.5 V	1.12 mm	1000000 Write/Erase Cycles	1 MHz	1.3 mm	Not Qualified	10 ms	1-WIRE	2048 bit	2.5 V		e3	40	260	.000005 Amp	2.9 mm
11AA02UIDT-I/TT	Microchip Technology	EEPROM	INDUSTRIAL	3	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	5 mA	256 words	2.5			8	SMALL OUTLINE	SOP3,.37		200	.95 mm	85 Cel			256X8	256	-40 Cel		MATTE TIN			DUAL	1		R-PDSO-G3	1	5.5 V	1.12 mm	1000000 Write/Erase Cycles	.1 MHz	1.3 mm		5 ms	SPI	2048 bit	1.8 V		e3	40	260	.000001 Amp	2.9 mm	2.5
11LC010T-I/TT	Microchip Technology	EEPROM	INDUSTRIAL	3	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	5 mA	128 words	5	NO	3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TO-236	EEPROMs	200	.95 mm	85 Cel	NO	TOTEM POLE	128X8	128	-40 Cel		MATTE TIN		NO	DUAL	1	SOFTWARE	R-PDSO-G3	1	5.5 V	1.12 mm	1000000 Write/Erase Cycles	1 MHz	1.3 mm	Not Qualified	10 ms	1-WIRE	1024 bit	2.5 V		e3	40	260	.000005 Amp	2.9 mm
11AA020-I/TO	Microchip Technology	EEPROM	INDUSTRIAL	3	TO-92	UNSPECIFIED	PLASTIC/EPOXY	NO	1	CMOS	TS 16949	THROUGH-HOLE	SERIAL	SYNCHRONOUS	5 mA	256 words	5	NO	2/5	8	CYLINDRICAL	SIP3,.1,50	EEPROMs	200	1.27 mm	85 Cel	NO	TOTEM POLE	256X8	256	-40 Cel		MATTE TIN		NO	BOTTOM	1	SOFTWARE	X-PBCY-T3		5.5 V		1000000 Write/Erase Cycles	1 MHz		Not Qualified	10 ms	1-WIRE	2048 bit	1.8 V		e3			.000005 Amp
11AA020T-I/TT	Microchip Technology	EEPROM	INDUSTRIAL	3	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	5 mA	256 words	5	NO	2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TO-236	EEPROMs	200	.95 mm	85 Cel	NO	TOTEM POLE	256X8	256	-40 Cel		MATTE TIN		NO	DUAL	1	SOFTWARE	R-PDSO-G3	1	5.5 V	1.12 mm	1000000 Write/Erase Cycles	1 MHz	1.3 mm	Not Qualified	10 ms	1-WIRE	2048 bit	1.8 V		e3	40	260	.000005 Amp	2.9 mm
DS2433-Z01	Analog Devices	EEPROM	INDUSTRIAL	3		ROUND	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		512 words	5			8	CYLINDRICAL					85 Cel			512X8	512	-40 Cel		TIN LEAD			BOTTOM			O-PBCY-T3		6 V					Not Qualified		1-WIRE	4096 bit	2.8 V		e0
11AA02E64T-I/TT	Microchip Technology	EEPROM	INDUSTRIAL	3	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	5 mA	256 words	2.5			8	SMALL OUTLINE	SOP3,.37		200	.95 mm	85 Cel	NO		256X8	256	-40 Cel		MATTE TIN	10100000R		DUAL	1	SOFTWARE	R-PDSO-G3		5.5 V	1.12 mm	1000000 Write/Erase Cycles	.1 MHz	1.3 mm		10 ms	I2C	2048 bit	1.8 V		e3			.000001 Amp	2.9 mm	2.5
11LC080T-I/TT	Microchip Technology	EEPROM	INDUSTRIAL	3	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	5 mA	1024 words	5	NO	3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TO-236	EEPROMs	200	.95 mm	85 Cel	NO	TOTEM POLE	1KX8	1K	-40 Cel		MATTE TIN		NO	DUAL	1	SOFTWARE	R-PDSO-G3	1	5.5 V	1.12 mm	1000000 Write/Erase Cycles	1 MHz	1.3 mm	Not Qualified	10 ms	1-WIRE	8192 bit	2.5 V		e3	40	260	.000005 Amp	2.9 mm
DS28E05R+U	Analog Devices	EEPROM	INDUSTRIAL	3	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	.4 mA	64 words	3.3		3/3.3	1	SMALL OUTLINE	TO-236	EEPROMs	10	.95 mm	85 Cel			64X1	64	-40 Cel		Matte Tin (Sn) - annealed			DUAL			R-PDSO-G3	1	3.63 V	1.12 mm	1000 Write/Erase Cycles		1.3 mm	Not Qualified		1-WIRE	64 bit	2.97 V		e3	30	260		2.92 mm
DS2433-Z01/T&R	Maxim Integrated	EEPROM	INDUSTRIAL	3		ROUND	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		512 words	5			8	CYLINDRICAL					85 Cel			512X8	512	-40 Cel		TIN LEAD			BOTTOM			O-PBCY-T3		6 V					Not Qualified		1-WIRE	4096 bit	2.8 V		e0
DS1972-F3#	Maxim Integrated	EEPROM	INDUSTRIAL	3		ROUND	METAL	NO	1	CMOS		WIRE	SERIAL	ASYNCHRONOUS		256 words			3/5	4	CYLINDRICAL	BUTTON,.68IN	EEPROMs	10		85 Cel			256X4	256	-40 Cel		MATTE TIN			BOTTOM			O-MBCY-W3		5.25 V		50000 Write/Erase Cycles			Not Qualified		1-WIRE	1024 bit	2.8 V		e3
DS2433/T&R	Maxim Integrated	EEPROM	INDUSTRIAL	3		ROUND	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	ASYNCHRONOUS		4096 words	5			1	CYLINDRICAL					85 Cel			4KX1	4K	-40 Cel		TIN LEAD			BOTTOM			O-PBCY-T3		6 V			.0163 MHz		Not Qualified		1-WIRE	4096 bit	2.8 V		e0
DS2433T	Maxim Integrated	EEPROM	INDUSTRIAL	3		ROUND	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		512 words			3/5	8	CYLINDRICAL	SIP3,.1,50	EEPROMs		1.27 mm	85 Cel			512X8	512	-40 Cel		TIN LEAD			BOTTOM			O-PBCY-T3		6 V		100000 Write/Erase Cycles	.0163 MHz		Not Qualified		1-WIRE	4096 bit	2.8 V		e0

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.