40 EEPROM 163

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Maximum Write Cycle Time (tWC)	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
AT28C1024-15BC	Atmel	EEPROM	COMMERCIAL	40	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	65536 words		5	YES	5	16	IN-LINE	DIP40,.6	EEPROMs		2.54 mm	70 Cel	3-STATE	64KX16	64K	0 Cel	NO	TIN LEAD	DUAL	R-CDIP-T40		5.5 V	4.06 mm	15.24 mm	Not Qualified		1048576 bit	4.5 V	AUTOMATIC WRITE; PAGE WRITE	64	e0	.0004 Amp	50.755 mm	150 ns	5	YES
CAT28C512T14I-15	Onsemi	EEPROM	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		65536 words		5			8	SMALL OUTLINE, THIN PROFILE			100	.5 mm	85 Cel		64KX8	64K	-40 Cel		TIN LEAD	DUAL	R-PDSO-G40	2A	5.5 V	1.2 mm	10 mm	Not Qualified	5 ms	524288 bit	4.5 V	10000 PROGRAM/ERASE CYCLES; DATA RETENTION = 100 YEARS		e0		12.4 mm	150 ns	5
CAT28C512T14I-12T	Onsemi	EEPROM	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		65536 words		5			8	SMALL OUTLINE, THIN PROFILE			100	.5 mm	85 Cel		64KX8	64K	-40 Cel		TIN LEAD	DUAL	R-PDSO-G40	2A	5.5 V	1.2 mm	10 mm	Not Qualified	5 ms	524288 bit	4.5 V	10000 PROGRAM/ERASE CYCLES; DATA RETENTION = 100 YEARS		e0		12.4 mm	120 ns	5
CAT28C512T14A-12T	Onsemi	EEPROM	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		65536 words		5			8	SMALL OUTLINE, THIN PROFILE			100	.5 mm	105 Cel		64KX8	64K	-40 Cel		TIN LEAD	DUAL	R-PDSO-G40	2A	5.5 V	1.2 mm	10 mm	Not Qualified	5 ms	524288 bit	4.5 V	10000 PROGRAM/ERASE CYCLES; DATA RETENTION = 100 YEARS		e0		12.4 mm	120 ns	5
CAT28C512H14I-12	Onsemi	EEPROM	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		65536 words		5			8	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel		64KX8	64K	-40 Cel		MATTE TIN	DUAL	R-PDSO-G40		5.5 V	1.2 mm	10 mm	Not Qualified	5 ms	524288 bit	4.5 V			e3		12.4 mm	120 ns	5
CAT28C512H14I-15	Onsemi	EEPROM	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		65536 words		5			8	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel		64KX8	64K	-40 Cel		MATTE TIN	DUAL	R-PDSO-G40		5.5 V	1.2 mm	10 mm	Not Qualified	5 ms	524288 bit	4.5 V			e3		12.4 mm	150 ns	5
CAT28C512T14I-12	Onsemi	EEPROM	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		65536 words		5			8	SMALL OUTLINE, THIN PROFILE			100	.5 mm	85 Cel		64KX8	64K	-40 Cel		TIN LEAD	DUAL	R-PDSO-G40	2A	5.5 V	1.2 mm	10 mm	Not Qualified	5 ms	524288 bit	4.5 V	10000 PROGRAM/ERASE CYCLES; DATA RETENTION = 100 YEARS		e0		12.4 mm	120 ns	5
CAT28C513HT14A-15T	Onsemi	EEPROM	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		65536 words		5			8	SMALL OUTLINE, THIN PROFILE			100	.5 mm	105 Cel		64KX8	64K	-40 Cel		TIN LEAD	DUAL	R-PDSO-G40	2A	5.5 V	1.2 mm	10 mm	Not Qualified		524288 bit	4.5 V	100000 PROGRAM/ERASE CYCLES; DATA RETENTION = 100 YEARS		e0		12.4 mm	150 ns	5
CAT28C512T14A-15T	Onsemi	EEPROM	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		65536 words		5			8	SMALL OUTLINE, THIN PROFILE			100	.5 mm	105 Cel		64KX8	64K	-40 Cel		TIN LEAD	DUAL	R-PDSO-G40	2A	5.5 V	1.2 mm	10 mm	Not Qualified	5 ms	524288 bit	4.5 V	10000 PROGRAM/ERASE CYCLES; DATA RETENTION = 100 YEARS		e0		12.4 mm	150 ns	5
CAT28C513T14A-15T	Onsemi	EEPROM	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		65536 words		5			8	SMALL OUTLINE, THIN PROFILE			100	.5 mm	105 Cel		64KX8	64K	-40 Cel		TIN LEAD	DUAL	R-PDSO-G40	2A	5.5 V	1.2 mm	10 mm	Not Qualified		524288 bit	4.5 V	10000 PROGRAM/ERASE CYCLES; DATA RETENTION = 100 YEARS		e0		12.4 mm	150 ns	5
CAT28C512T14-12	Onsemi	EEPROM	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		65536 words		5			8	SMALL OUTLINE, THIN PROFILE			100	.5 mm	70 Cel		64KX8	64K	0 Cel		TIN LEAD	DUAL	R-PDSO-G40	2A	5.5 V	1.2 mm	10 mm	Not Qualified	5 ms	524288 bit	4.5 V	10000 PROGRAM/ERASE CYCLES; DATA RETENTION = 100 YEARS		e0		12.4 mm	120 ns	5
CAT28C513T14-15T	Onsemi	EEPROM	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		65536 words		5			8	SMALL OUTLINE, THIN PROFILE			100	.5 mm	70 Cel		64KX8	64K	0 Cel		TIN LEAD	DUAL	R-PDSO-G40	2A	5.5 V	1.2 mm	10 mm	Not Qualified		524288 bit	4.5 V	10000 PROGRAM/ERASE CYCLES; DATA RETENTION = 100 YEARS		e0		12.4 mm	150 ns	5
CAT28C512H14I-15T	Onsemi	EEPROM	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		65536 words		5			8	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel		64KX8	64K	-40 Cel		MATTE TIN	DUAL	R-PDSO-G40		5.5 V	1.2 mm	10 mm	Not Qualified	5 ms	524288 bit	4.5 V			e3		12.4 mm	150 ns	5
CAT28C513T14-12T	Onsemi	EEPROM	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		65536 words		5			8	SMALL OUTLINE, THIN PROFILE			100	.5 mm	70 Cel		64KX8	64K	0 Cel		TIN LEAD	DUAL	R-PDSO-G40	2A	5.5 V	1.2 mm	10 mm	Not Qualified		524288 bit	4.5 V	10000 PROGRAM/ERASE CYCLES; DATA RETENTION = 100 YEARS		e0		12.4 mm	120 ns	5
CAT28C513T14A-12T	Onsemi	EEPROM	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		65536 words		5			8	SMALL OUTLINE, THIN PROFILE			100	.5 mm	105 Cel		64KX8	64K	-40 Cel		TIN LEAD	DUAL	R-PDSO-G40	2A	5.5 V	1.2 mm	10 mm	Not Qualified		524288 bit	4.5 V	10000 PROGRAM/ERASE CYCLES; DATA RETENTION = 100 YEARS		e0		12.4 mm	120 ns	5
CAT28C512H14A-15T	Onsemi	EEPROM	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		65536 words		5			8	SMALL OUTLINE, THIN PROFILE				.5 mm	105 Cel		64KX8	64K	-40 Cel		MATTE TIN	DUAL	R-PDSO-G40		5.5 V	1.2 mm	10 mm	Not Qualified	5 ms	524288 bit	4.5 V			e3		12.4 mm	150 ns	5
CAT28C513HT14I-15T	Onsemi	EEPROM	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		65536 words		5			8	SMALL OUTLINE, THIN PROFILE			100	.5 mm	85 Cel		64KX8	64K	-40 Cel		TIN LEAD	DUAL	R-PDSO-G40	2A	5.5 V	1.2 mm	10 mm	Not Qualified		524288 bit	4.5 V	100000 PROGRAM/ERASE CYCLES; DATA RETENTION = 100 YEARS		e0		12.4 mm	150 ns	5
CAT28C513T14I-12T	Onsemi	EEPROM	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		65536 words		5			8	SMALL OUTLINE, THIN PROFILE			100	.5 mm	85 Cel		64KX8	64K	-40 Cel		TIN LEAD	DUAL	R-PDSO-G40	2A	5.5 V	1.2 mm	10 mm	Not Qualified		524288 bit	4.5 V	10000 PROGRAM/ERASE CYCLES; DATA RETENTION = 100 YEARS		e0		12.4 mm	120 ns	5
CAT28C512T14A-12	Onsemi	EEPROM	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		65536 words		5			8	SMALL OUTLINE, THIN PROFILE			100	.5 mm	105 Cel		64KX8	64K	-40 Cel		TIN LEAD	DUAL	R-PDSO-G40	2A	5.5 V	1.2 mm	10 mm	Not Qualified	5 ms	524288 bit	4.5 V	10000 PROGRAM/ERASE CYCLES; DATA RETENTION = 100 YEARS		e0		12.4 mm	120 ns	5
CAT28C512HT14-15T	Onsemi	EEPROM	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		65536 words		5			8	SMALL OUTLINE, THIN PROFILE			100	.5 mm	70 Cel		64KX8	64K	0 Cel		TIN LEAD	DUAL	R-PDSO-G40	2A	5.5 V	1.2 mm	10 mm	Not Qualified		524288 bit	4.5 V	100000 PROGRAM/ERASE CYCLES; DATA RETENTION = 100 YEARS		e0		12.4 mm	150 ns	5
CAT28C512H14-15T	Onsemi	EEPROM	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		65536 words		5			8	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel		64KX8	64K	0 Cel		MATTE TIN	DUAL	R-PDSO-G40		5.5 V	1.2 mm	10 mm	Not Qualified	5 ms	524288 bit	4.5 V			e3		12.4 mm	150 ns	5
CAT28C512T14A-15	Onsemi	EEPROM	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		65536 words		5			8	SMALL OUTLINE, THIN PROFILE			100	.5 mm	105 Cel		64KX8	64K	-40 Cel		TIN LEAD	DUAL	R-PDSO-G40	2A	5.5 V	1.2 mm	10 mm	Not Qualified	5 ms	524288 bit	4.5 V	10000 PROGRAM/ERASE CYCLES; DATA RETENTION = 100 YEARS		e0		12.4 mm	150 ns	5
CAT28C512H14-12	Onsemi	EEPROM	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		65536 words		5			8	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel		64KX8	64K	0 Cel		MATTE TIN	DUAL	R-PDSO-G40		5.5 V	1.2 mm	10 mm	Not Qualified	5 ms	524288 bit	4.5 V			e3		12.4 mm	120 ns	5
CAT28C513T14I-15T	Onsemi	EEPROM	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		65536 words		5			8	SMALL OUTLINE, THIN PROFILE			100	.5 mm	85 Cel		64KX8	64K	-40 Cel		TIN LEAD	DUAL	R-PDSO-G40	2A	5.5 V	1.2 mm	10 mm	Not Qualified		524288 bit	4.5 V	10000 PROGRAM/ERASE CYCLES; DATA RETENTION = 100 YEARS		e0		12.4 mm	150 ns	5
CAT28C512H14A-12T	Onsemi	EEPROM	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		65536 words		5			8	SMALL OUTLINE, THIN PROFILE				.5 mm	105 Cel		64KX8	64K	-40 Cel		MATTE TIN	DUAL	R-PDSO-G40		5.5 V	1.2 mm	10 mm	Not Qualified	5 ms	524288 bit	4.5 V			e3		12.4 mm	120 ns	5
CAT28C512T14-12T	Onsemi	EEPROM	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		65536 words		5			8	SMALL OUTLINE, THIN PROFILE			100	.5 mm	70 Cel		64KX8	64K	0 Cel		TIN LEAD	DUAL	R-PDSO-G40	2A	5.5 V	1.2 mm	10 mm	Not Qualified	5 ms	524288 bit	4.5 V	10000 PROGRAM/ERASE CYCLES; DATA RETENTION = 100 YEARS		e0		12.4 mm	120 ns	5
CAT28C513HT14A-12T	Onsemi	EEPROM	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		65536 words		5			8	SMALL OUTLINE, THIN PROFILE			100	.5 mm	105 Cel		64KX8	64K	-40 Cel		TIN LEAD	DUAL	R-PDSO-G40	2A	5.5 V	1.2 mm	10 mm	Not Qualified		524288 bit	4.5 V	100000 PROGRAM/ERASE CYCLES; DATA RETENTION = 100 YEARS		e0		12.4 mm	120 ns	5
CAT28C513HT14-12T	Onsemi	EEPROM	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		65536 words		5			8	SMALL OUTLINE, THIN PROFILE			100	.5 mm	70 Cel		64KX8	64K	0 Cel		TIN LEAD	DUAL	R-PDSO-G40	2A	5.5 V	1.2 mm	10 mm	Not Qualified		524288 bit	4.5 V	100000 PROGRAM/ERASE CYCLES; DATA RETENTION = 100 YEARS		e0		12.4 mm	120 ns	5
CAT28C512T14-15T	Onsemi	EEPROM	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		65536 words		5			8	SMALL OUTLINE, THIN PROFILE			100	.5 mm	70 Cel		64KX8	64K	0 Cel		TIN LEAD	DUAL	R-PDSO-G40	2A	5.5 V	1.2 mm	10 mm	Not Qualified	5 ms	524288 bit	4.5 V	10000 PROGRAM/ERASE CYCLES; DATA RETENTION = 100 YEARS		e0		12.4 mm	150 ns	5
CAT28C512HT14-12T	Onsemi	EEPROM	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		65536 words		5			8	SMALL OUTLINE, THIN PROFILE			100	.5 mm	70 Cel		64KX8	64K	0 Cel		TIN LEAD	DUAL	R-PDSO-G40	2A	5.5 V	1.2 mm	10 mm	Not Qualified		524288 bit	4.5 V	100000 PROGRAM/ERASE CYCLES; DATA RETENTION = 100 YEARS		e0		12.4 mm	120 ns	5
CAT28C512HT14I-12T	Onsemi	EEPROM	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		65536 words		5			8	SMALL OUTLINE, THIN PROFILE			100	.5 mm	85 Cel		64KX8	64K	-40 Cel		TIN LEAD	DUAL	R-PDSO-G40	2A	5.5 V	1.2 mm	10 mm	Not Qualified		524288 bit	4.5 V	100000 PROGRAM/ERASE CYCLES; DATA RETENTION = 100 YEARS		e0		12.4 mm	120 ns	5
CAT28C512H14-15	Onsemi	EEPROM	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		65536 words		5			8	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel		64KX8	64K	0 Cel		MATTE TIN	DUAL	R-PDSO-G40		5.5 V	1.2 mm	10 mm	Not Qualified	5 ms	524288 bit	4.5 V			e3		12.4 mm	150 ns	5
CAT28C512H14I-12T	Onsemi	EEPROM	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		65536 words		5			8	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel		64KX8	64K	-40 Cel		MATTE TIN	DUAL	R-PDSO-G40		5.5 V	1.2 mm	10 mm	Not Qualified	5 ms	524288 bit	4.5 V			e3		12.4 mm	120 ns	5
CAT28C512T14I-15T	Onsemi	EEPROM	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		65536 words		5			8	SMALL OUTLINE, THIN PROFILE			100	.5 mm	85 Cel		64KX8	64K	-40 Cel		TIN LEAD	DUAL	R-PDSO-G40	2A	5.5 V	1.2 mm	10 mm	Not Qualified	5 ms	524288 bit	4.5 V	10000 PROGRAM/ERASE CYCLES; DATA RETENTION = 100 YEARS		e0		12.4 mm	150 ns	5
CAT28C512H14-12T	Onsemi	EEPROM	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		65536 words		5			8	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel		64KX8	64K	0 Cel		MATTE TIN	DUAL	R-PDSO-G40		5.5 V	1.2 mm	10 mm	Not Qualified	5 ms	524288 bit	4.5 V			e3		12.4 mm	120 ns	5
CAT28C512T14-15	Onsemi	EEPROM	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		65536 words		5			8	SMALL OUTLINE, THIN PROFILE			100	.5 mm	70 Cel		64KX8	64K	0 Cel		TIN LEAD	DUAL	R-PDSO-G40	2A	5.5 V	1.2 mm	10 mm	Not Qualified	5 ms	524288 bit	4.5 V	10000 PROGRAM/ERASE CYCLES; DATA RETENTION = 100 YEARS		e0		12.4 mm	150 ns	5
CAT28C512H14A-15	Onsemi	EEPROM	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		65536 words		5			8	SMALL OUTLINE, THIN PROFILE				.5 mm	105 Cel		64KX8	64K	-40 Cel		MATTE TIN	DUAL	R-PDSO-G40		5.5 V	1.2 mm	10 mm	Not Qualified	5 ms	524288 bit	4.5 V			e3		12.4 mm	150 ns	5
CAT28C512HT14A-15T	Onsemi	EEPROM	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		65536 words		5			8	SMALL OUTLINE, THIN PROFILE			100	.5 mm	105 Cel		64KX8	64K	-40 Cel		TIN LEAD	DUAL	R-PDSO-G40	2A	5.5 V	1.2 mm	10 mm	Not Qualified		524288 bit	4.5 V	100000 PROGRAM/ERASE CYCLES; DATA RETENTION = 100 YEARS		e0		12.4 mm	150 ns	5
CAT28C512HT14I-15T	Onsemi	EEPROM	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		65536 words		5			8	SMALL OUTLINE, THIN PROFILE			100	.5 mm	85 Cel		64KX8	64K	-40 Cel		TIN LEAD	DUAL	R-PDSO-G40	2A	5.5 V	1.2 mm	10 mm	Not Qualified		524288 bit	4.5 V	100000 PROGRAM/ERASE CYCLES; DATA RETENTION = 100 YEARS		e0		12.4 mm	150 ns	5
CAT28C513HT14-15T	Onsemi	EEPROM	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		65536 words		5			8	SMALL OUTLINE, THIN PROFILE			100	.5 mm	70 Cel		64KX8	64K	0 Cel		TIN LEAD	DUAL	R-PDSO-G40	2A	5.5 V	1.2 mm	10 mm	Not Qualified		524288 bit	4.5 V	100000 PROGRAM/ERASE CYCLES; DATA RETENTION = 100 YEARS		e0		12.4 mm	150 ns	5
CAT28C512HT14A-12T	Onsemi	EEPROM	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		65536 words		5			8	SMALL OUTLINE, THIN PROFILE			100	.5 mm	105 Cel		64KX8	64K	-40 Cel		TIN LEAD	DUAL	R-PDSO-G40	2A	5.5 V	1.2 mm	10 mm	Not Qualified		524288 bit	4.5 V	100000 PROGRAM/ERASE CYCLES; DATA RETENTION = 100 YEARS		e0		12.4 mm	120 ns	5
CAT28C512H14A-12	Onsemi	EEPROM	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		65536 words		5			8	SMALL OUTLINE, THIN PROFILE				.5 mm	105 Cel		64KX8	64K	-40 Cel		MATTE TIN	DUAL	R-PDSO-G40		5.5 V	1.2 mm	10 mm	Not Qualified	5 ms	524288 bit	4.5 V			e3		12.4 mm	120 ns	5
CAT28C513HT14I-12T	Onsemi	EEPROM	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		65536 words		5			8	SMALL OUTLINE, THIN PROFILE			100	.5 mm	85 Cel		64KX8	64K	-40 Cel		TIN LEAD	DUAL	R-PDSO-G40	2A	5.5 V	1.2 mm	10 mm	Not Qualified		524288 bit	4.5 V	100000 PROGRAM/ERASE CYCLES; DATA RETENTION = 100 YEARS		e0		12.4 mm	120 ns	5
M27C1024-80XN6XTR	STMicroelectronics	EEPROM CARD	INDUSTRIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING			35 mA	65536 words	COMMON	5		5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.56,20	OTP ROMs		.5 mm	85 Cel	3-STATE	64KX16	64K	-40 Cel		TIN LEAD	DUAL	R-PDSO-G40							1048576 bit				e0	.0001 Amp		80 ns	2.7
M27C1024-12N3XTR	STMicroelectronics	EEPROM CARD	AUTOMOTIVE	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING			35 mA	65536 words	COMMON	5		5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.56,20	OTP ROMs		.5 mm	125 Cel	3-STATE	64KX16	64K	-40 Cel		TIN LEAD	DUAL	R-PDSO-G40							1048576 bit				e0	.0001 Amp		100 ns	2.7
M27C1024-10XN6XTR	STMicroelectronics	EEPROM CARD	INDUSTRIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING			35 mA	65536 words	COMMON	5		5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.56,20	OTP ROMs		.5 mm	85 Cel	3-STATE	64KX16	64K	-40 Cel		TIN LEAD	DUAL	R-PDSO-G40							1048576 bit				e0	.0001 Amp		100 ns	2.7
M27C1024-15XN7XTR	STMicroelectronics	EEPROM CARD	INDUSTRIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING			35 mA	65536 words	COMMON	5		5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.56,20	OTP ROMs		.5 mm	105 Cel	3-STATE	64KX16	64K	-40 Cel		TIN LEAD	DUAL	R-PDSO-G40							1048576 bit				e0	.0001 Amp		100 ns	2.7
M27C1024-10N7XTR	STMicroelectronics	EEPROM CARD	INDUSTRIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING			35 mA	65536 words	COMMON	5		5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.56,20	OTP ROMs		.5 mm	105 Cel	3-STATE	64KX16	64K	-40 Cel		TIN LEAD	DUAL	R-PDSO-G40							1048576 bit				e0	.0001 Amp		100 ns	2.7

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.