8 EEPROM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	I2C Control Byte	Ready or Busy	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Programming Voltage (V)
S-24C16DI-I8T1U5	Ablic	EEPROM	INDUSTRIAL	8	VSOF	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		FLAT	SERIAL	SYNCHRONOUS		2048 words		5			8	SMALL OUTLINE, VERY THIN PROFILE				.5 mm	85 Cel			2KX8	2K	-40 Cel	TIN			DUAL			R-PDSO-F8		5.5 V	.5 mm		1 MHz	1.97 mm		5 ms	I2C	16384 bit	2.5 V	IT ALSO OPERATES AT 0.4 MHZ AT 1.7 TO 5.5 V SUPPLY VOLTAGE	e3				2.23 mm
S-25C080A0I-I8T1U	Ablic	EEPROM	INDUSTRIAL	8	VSOF	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		FLAT	SERIAL	SYNCHRONOUS		1024 words		5			8	SMALL OUTLINE, VERY THIN PROFILE				.5 mm	85 Cel			1KX8	1K	-40 Cel	TIN			DUAL			R-PDSO-F8		5.5 V	.5 mm		5 MHz	1.97 mm		4 ms	SPI	8192 bit	2.5 V	IT ALSO HAVE FREQUENCY OF 2 MHZ OPERATES AT 1.6 TO 2.5 V SUPPLY VOLTAGE	e3				2.23 mm
X24C16PM-3	Intersil	EEPROM	MILITARY	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		2048 words		3.3			8	IN-LINE				2.54 mm	125 Cel			2KX8	2K	-55 Cel				DUAL			R-PDIP-T8		5.5 V	5.33 mm		.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	16384 bit	3 V						9.585 mm
X24C16PMB-2.7	Intersil	EEPROM	MILITARY	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	SERIAL	SYNCHRONOUS		2048 words		3.3			8	IN-LINE				2.54 mm	125 Cel			2KX8	2K	-55 Cel				DUAL			R-PDIP-T8		5.5 V	5.33 mm		.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	16384 bit	2.7 V						9.585 mm
X24C16PMB-3.5	Intersil	EEPROM	MILITARY	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	SERIAL	SYNCHRONOUS		2048 words		5			8	IN-LINE				2.54 mm	125 Cel			2KX8	2K	-55 Cel				DUAL			R-PDIP-T8		5.5 V	5.33 mm		.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	16384 bit	3.5 V						9.585 mm
X25020S	Xicor	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words		5		5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	70 Cel		3-STATE	256X8	256	0 Cel	Tin/Lead (Sn/Pb)			DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	100000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	10 ms	SPI	2048 bit	4.5 V	100K ENDURANCE CYCLES; DATA RETENTION = 100 YEARS	e0			.00015 Amp	4.9 mm
X25020S-2.7	Xicor	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words		5		3/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	70 Cel		3-STATE	256X8	256	0 Cel	TIN LEAD			DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	100000 Write/Erase Cycles	2 MHz	3.9 mm	Not Qualified	10 ms	SPI	2048 bit	2.7 V	100K ENDURANCE CYCLES; DATA RETENTION = 100 YEARS	e0			.00015 Amp	4.9 mm
X25020SIT2	Xicor	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		256 words		5			8	SMALL OUTLINE			100	1.27 mm	85 Cel		3-STATE	256X8	256	-40 Cel				DUAL			R-PDSO-G8		5.5 V	1.75 mm	100000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	10 ms	SPI	2048 bit	4.5 V	100K ENDURANCE CYCLES; DATA RETENTION = 100 YEARS					4.9 mm
X25020ST1	Xicor	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		256 words		5			8	SMALL OUTLINE			100	1.27 mm	70 Cel		3-STATE	256X8	256	0 Cel				DUAL			R-PDSO-G8		5.5 V	1.75 mm	100000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	10 ms	SPI	2048 bit	4.5 V	100K ENDURANCE CYCLES; DATA RETENTION = 100 YEARS					4.9 mm
XC1736EPDG8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	10 mA	36288 words	COMMON	5		5	1	IN-LINE	DIP8,.3	OTP ROMs		2.54 mm	70 Cel		3-STATE	36288X1	36288	0 Cel	Matte Tin (Sn)			DUAL			R-PDIP-T8	1	5.25 V	4.5974 mm		10 MHz	7.62 mm	Not Qualified			36288 bit	4.75 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e3	30	250	.00005 Amp	9.3599 mm
11AA010-I/MS	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	5 mA	128 words		5	NO	2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19	EEPROMs	200	.65 mm	85 Cel	NO	TOTEM POLE	128X8	128	-40 Cel	MATTE TIN		NO	DUAL	1	SOFTWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified	10 ms	1-WIRE	1024 bit	1.8 V		e3	40	260	.000005 Amp	3 mm
11AA010-I/SN	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	5 mA	128 words		5	NO	2/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	200	1.27 mm	85 Cel	NO	TOTEM POLE	128X8	128	-40 Cel	MATTE TIN		NO	DUAL	1	SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	10 ms	1-WIRE	1024 bit	1.8 V		e3	30	260	.000005 Amp	4.9 mm
11AA010T-I/SN	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	5 mA	128 words		5	NO	2/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	200	1.27 mm	85 Cel	NO	TOTEM POLE	128X8	128	-40 Cel	MATTE TIN		NO	DUAL	1	SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	10 ms	1-WIRE	1024 bit	1.8 V		e3	30	260	.000005 Amp	4.9 mm
24AA02T/SN	Microchip Technology	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words		5		2/5	8	SMALL OUTLINE	SOP8,.23	EEPROMs	200	1.27 mm	70 Cel		OPEN-DRAIN	256X8	256	0 Cel	MATTE TIN	1010XXXR		DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	5 ms	I2C	2048 bit	1.8 V		e3	30	260		4.9 mm	5
24AA04T-I/SN	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	512 words		2.5		2/5	8	SMALL OUTLINE	SOP8,.23	EEPROMs	200	1.27 mm	85 Cel		OPEN-DRAIN	512X8	512	-40 Cel	MATTE TIN	1010XXMR		DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	4096 bit	1.7 V	1.7V TO 2.5V @ 0.1MHz	e3	30	260	.000001 Amp	4.9 mm	2.5
24AA08T-I/MNY	Microchip Technology	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	1024 words		2.5		2/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20	EEPROMs	200	.5 mm	85 Cel		OPEN-DRAIN	1KX8	1K	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	1010XMMR		DUAL	1	HARDWARE	R-PDSO-N8	1	5.5 V	.8 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	8192 bit	1.7 V	1.7V TO 2.5V @ 0.1MHz	e4	40	260	.000001 Amp	3 mm	2.5
24AA08T-I/SN	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	1024 words		2.5			8	SMALL OUTLINE	SOP8,.23		200	1.27 mm	85 Cel		OPEN-DRAIN	1KX8	1K	-40 Cel	Matte Tin (Sn)	1010XMMR		DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	8192 bit	1.7 V	1.7V TO 2.5V @ 0.1MHz	e3	30	260	.000001 Amp	4.9 mm	2.5
24AA128T-I/SM	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	16384 words		2.5		2/5	8	SMALL OUTLINE	SOP8,.3	EEPROMs	200	1.27 mm	85 Cel		OPEN-DRAIN	16KX8	16K	-40 Cel	Matte Tin (Sn) - annealed	1010DDDR		DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	2.03 mm	1000000 Write/Erase Cycles	.4 MHz	5.25 mm	Not Qualified	5 ms	I2C	131072 bit	1.7 V		e3	40	260	.000005 Amp	5.26 mm	2.5
24AA128T-I/SNRVF	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	16384 words		5			8	SMALL OUTLINE	SOP8,.23		200	1.27 mm	85 Cel	NO	OPEN-DRAIN	16KX8	16K	-40 Cel		1010DDDR		DUAL	1	HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm		5 ms	I2C	131072 bit	2.5 V	ALSO OPERATES AT 0.1MHZ AT 1.7-2.5 SUPPLY VOLTGE				.000001 Amp	4.9 mm	2.5
24AA16-I/MC	Microchip Technology	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	2048 words		2.5		2/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20	EEPROMs	200	.5 mm	85 Cel			2KX8	2K	-40 Cel	MATTE TIN	1010MMMR		DUAL	1	HARDWARE	R-PDSO-N8	1	5.5 V	1 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	16384 bit	1.7 V	1.7V TO 2.5V @ 0.1MHz	e3	40	260	.000001 Amp	3 mm	2.5
24AA16T-I/ST	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	2048 words		2.5		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	200	.65 mm	85 Cel			2KX8	2K	-40 Cel	Matte Tin (Sn)	1010MMMR		DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	16384 bit	1.7 V	1.7V TO 2.5V @ 0.1MHz	e3	40	260	.000001 Amp	4.4 mm	2.5
24AA512-I/SMG	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	65536 words		2.5		2/5	8	SMALL OUTLINE	SOP8,.3	EEPROMs	200	1.27 mm	85 Cel			64KX8	64K	-40 Cel	MATTE TIN	1010DDDR		DUAL		HARDWARE	R-PDSO-G8		5.5 V	2.03 mm	1000000 Write/Erase Cycles	.4 MHz	5.23 mm	Not Qualified	5 ms	I2C	524288 bit	1.7 V		e3			.000001 Amp	5.245 mm
24AA64T-E/SN	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words		4.5		2/5	8	SMALL OUTLINE	SOP8,.23	EEPROMs	200	1.27 mm	125 Cel		OPEN-DRAIN	8KX8	8K	-40 Cel	MATTE TIN	1010DDDR		DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	65536 bit	2.5 V		e3	30	260	.000005 Amp	4.9 mm	4.5
24C02CT-I/MC	Microchip Technology	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	256 words		5		5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20	EEPROMs	200	.5 mm	85 Cel		OPEN-DRAIN	256X8	256	-40 Cel	Matte Tin (Sn)	1010DDDR		DUAL	1	HARDWARE	R-PDSO-N8	1	5.5 V	1 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	1 ms	I2C	2048 bit	4.5 V		e3	40	260	.000005 Amp	3 mm	5
24CS512-E/MS	Microchip Technology	EEPROM		8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	65536 words					8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19		200	.65 mm	125 Cel			64KX8	64K	-40 Cel		1010DDDR		DUAL		HARDWARE	S-PDSO-G8		5.5 V	1.1 mm	1000000 Write/Erase Cycles	1 MHz	3 mm		5 ms	I2C	524288 bit	1.7 V					.000003 Amp	3 mm
24CS512T-E/MS	Microchip Technology	EEPROM		8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	65536 words					8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19		200	.65 mm	125 Cel			64KX8	64K	-40 Cel		1010DDDR		DUAL		HARDWARE	S-PDSO-G8		5.5 V	1.1 mm	1000000 Write/Erase Cycles	1 MHz	3 mm		5 ms	I2C	524288 bit	1.7 V					.000003 Amp	3 mm
24CS512T-E/MS66KVAO	Microchip Technology	EEPROM		8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	65536 words					8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19		200	.65 mm	125 Cel			64KX8	64K	-40 Cel		1010DDDR		DUAL		HARDWARE	S-PDSO-G8		5.5 V	1.1 mm	1000000 Write/Erase Cycles	1 MHz	3 mm		5 ms	I2C	524288 bit	1.7 V					.000003 Amp	3 mm
24CW1280T-I/SN	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	1 mA	16384 words		1.8			8	SMALL OUTLINE	SOP8,.23		200	1.27 mm	85 Cel		OPEN-DRAIN	16KX8	16K	-40 Cel	Matte Tin (Sn)	1010DDDR		DUAL	1	SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm		5 ms	I2C	131072 bit	1.6 V		e3			.000001 Amp	4.9 mm	1.8
24CW160T-I/MUY	Microchip Technology	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	NO LEAD	SERIAL	SYNCHRONOUS	1 mA	2048 words		1.8			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20		200	.5 mm	85 Cel		OPEN-DRAIN	2KX8	2K	-40 Cel		1010DDDR		DUAL	1	SOFTWARE	R-PDSO-N8		5.5 V	.55 mm	1000000 Write/Erase Cycles	1 MHz	2 mm		5 ms	I2C	16384 bit	1.6 V					.000001 Amp	3 mm	1.8
24FC256T-I/SNG	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	32768 words				3/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	200	1.27 mm	85 Cel	NO		32KX8	32K	-40 Cel	MATTE TIN	1010DDDR		DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	5 ms	I2C	262144 bit	1.7 V		e3			.000001 Amp	4.9 mm
24FC512-I/SN16KVAO	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	GULL WING	SERIAL	SYNCHRONOUS	5 mA	65536 words		2.5			8	SMALL OUTLINE	SOP8,.23		200	1.27 mm	85 Cel		OPEN-DRAIN	64KX8	64K	-40 Cel		1010DDDR		DUAL	1	HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm		5 ms	I2C	524288 bit	1.7 V					.000001 Amp	4.9 mm	2.5
24LC00/P	Microchip Technology	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	TS 16949	THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	16 words		4.5		3/5	8	IN-LINE	DIP8,.3	EEPROMs	200	2.54 mm	70 Cel		OPEN-DRAIN	16X8	16	0 Cel	MATTE TIN	1010XXXR		DUAL	1		R-PDIP-T8		5.5 V	4.32 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	4 ms	I2C	128 bit	2.5 V		e3			.000001 Amp	9.46 mm	4.5
24LC014-I/SN	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words					8	SMALL OUTLINE	SOP8,.23		200	1.27 mm	85 Cel			128X8	128	-40 Cel	MATTE TIN	1010DDDR		DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	1024 bit	2.5 V		e3	30	260	.000001 Amp	4.9 mm
24LC01B-I/ST	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words		5		3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	200	.65 mm	85 Cel			128X8	128	-40 Cel	Matte Tin (Sn)	1010XXXR		DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	1024 bit	2.5 V		e3	40	260	.000001 Amp	4.4 mm	5
24LC01BT-E/MNY	Microchip Technology	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	128 words		5			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20		200	.5 mm	125 Cel			128X8	128	-40 Cel	NICKEL PALLADIUM GOLD	1010XXXR		DUAL	1	HARDWARE	R-PDSO-N8	1	5.5 V	.8 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	1024 bit	2.5 V		e4	40	260	.000005 Amp	3 mm	5
24LC01BT-E/MS	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words		5		3/5	8	SMALL OUTLINE	SOP8,.19	EEPROMs	200	.65 mm	125 Cel			128X8	128	-40 Cel	Matte Tin (Sn)	1010XXXR		DUAL	1	HARDWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	1024 bit	2.5 V		e3	40	260	.000005 Amp	3 mm	5
24LC01BT-I/MS	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words		5		3/5	8	SMALL OUTLINE	SOP8,.19	EEPROMs	200	.65 mm	85 Cel			128X8	128	-40 Cel	MATTE TIN	1010XXXR		DUAL	1	HARDWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	1024 bit	2.5 V		e3		260	.000001 Amp	3 mm	5
24LC04B-I/ST	Microchip Technology	EEPROM		8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	512 words		5		3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	200	.65 mm	85 Cel		OPEN-DRAIN	512X8	512	-40 Cel	Matte Tin (Sn)	1010XXMR		DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	4096 bit	2.5 V		e3	40	260	.000001 Amp	4.4 mm	5
24LC128-I/PRVF	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	AEC-Q100	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	16384 words		5			8	IN-LINE	DIP8,.3		200	2.54 mm	85 Cel	NO	OPEN-DRAIN	16KX8	16K	-40 Cel		1010DDDR		DUAL	1	HARDWARE	R-PDIP-T8		5.5 V	5.334 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm		5 ms	I2C	131072 bit	2.5 V					.000001 Amp	9.271 mm	2.5
24LC16BT-E/MS	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	2048 words		5		3/5	8	SMALL OUTLINE	SOP8,.19	EEPROMs	200	.65 mm	125 Cel			2KX8	2K	-40 Cel	MATTE TIN	1010MMMR		DUAL	1	HARDWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	16384 bit	2.5 V		e3	40	260	.000005 Amp	3 mm	5
24LC22A-I/SNG	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		256 words		3			8	SMALL OUTLINE			200	1.27 mm	85 Cel			256X8	256	-40 Cel	Matte Tin (Sn)			DUAL			R-PDSO-G8	1	5.5 V	1.75 mm		.1 MHz	3.9 mm	Not Qualified	10 ms	I2C	2048 bit	2.5 V	DATA RETENTION > 200 YEARS; 1,000,000 ERASE/WRITE CYCLES	e3	40	260		4.9 mm
24LC256-E/MS	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	32768 words		4.5		3/5	8	SMALL OUTLINE	SOP8,.19	EEPROMs	200	.65 mm	125 Cel	NO	OPEN-DRAIN	32KX8	32K	-40 Cel	MATTE TIN	1010DDDR		DUAL	1	HARDWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	262144 bit	2.5 V		e3		260	.000005 Amp	3 mm	4.5
24LC256-E/ST16KVAO	Microchip Technology	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	32768 words		4.5			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		200	.65 mm	125 Cel	NO	OPEN-DRAIN	32KX8	32K	-40 Cel		1010DDDR		DUAL	1	HARDWARE	R-PDSO-G8		5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm		5 ms	I2C	262144 bit	2.5 V					.000005 Amp	4.4 mm	4.5
24LC256T-E/SM	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	32768 words		4.5		3/5	8	SMALL OUTLINE	SOP8,.3	EEPROMs	200	1.27 mm	125 Cel	NO	OPEN-DRAIN	32KX8	32K	-40 Cel	Matte Tin (Sn) - annealed	1010DDDR		DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	2.03 mm	1000000 Write/Erase Cycles	.4 MHz	5.25 mm	Not Qualified	5 ms	I2C	262144 bit	2.5 V		e3	40	260	.000005 Amp	5.26 mm	4.5
24LC32A/SM	Microchip Technology	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	4096 words		3.3		3/5	8	SMALL OUTLINE	SOP8,.3	EEPROMs	200	1.27 mm	70 Cel			4KX8	4K	0 Cel	Matte Tin (Sn) - annealed	1010DDDR		DUAL		HARDWARE	R-PDSO-G8	1	6 V		1000000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	5 ms	I2C	32768 bit	2.5 V	2-WIRE SERIAL INTERFACE; DATA RETENTION > 200 YEARS; 1000000 ERASE/WRITE CYCLES GUARANTEED	e3	40	260	.000001 Amp	4.9 mm
24LC32AT-E/MC	Microchip Technology	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	3 mA	4096 words		5		3/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20	EEPROMs	200	.5 mm	125 Cel			4KX8	4K	-40 Cel	Matte Tin (Sn)	1010DDDR		DUAL		HARDWARE	R-PDSO-N8	1	5.5 V	1 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	32768 bit	2.5 V	2-WIRE SERIAL INTERFACE; DATA RETENTION > 200 YEARS; 1000000 ERASE/WRITE CYCLES GUARANTEED	e3	40	260	.000005 Amp	3 mm
24LC32AT-I/ST	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	4096 words		5		3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	200	.65 mm	85 Cel			4KX8	4K	-40 Cel	Matte Tin (Sn)	1010DDDR		DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	32768 bit	2.5 V	2-WIRE SERIAL INTERFACE; DATA RETENTION > 200 YEARS; 1000000 ERASE/WRITE CYCLES GUARANTEED	e3	40	260	.000001 Amp	4.4 mm
24LC64FT-E/MNY	Microchip Technology	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	8192 words		5		3/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20	EEPROMs	200	.5 mm	125 Cel		OPEN-DRAIN	8KX8	8K	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	1010DDDR		DUAL	1	HARDWARE	R-PDSO-N8	1	5.5 V	.8 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	65536 bit	2.5 V		e4	40	260	.000005 Amp	3 mm	5

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.