8 EEPROM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	I2C Control Byte	Ready or Busy	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Programming Voltage (V)	Data Polling
CAT93C57UI-TE13	Onsemi	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		128 words	5			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8		100	.65 mm	85 Cel		128X16	128	-40 Cel		TIN LEAD			DUAL			R-PDSO-G8	1	6 V	1.1 mm		.5 MHz	3 mm	Not Qualified		MICROWIRE	2048 bit	2.5 V	1000000 PROGRAM/ERASE CYCLES; 100 YEAR DATA RETENTION	e0				4.4 mm
CAT64LC20U	Onsemi	EEPROM	COMMERCIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words	3		3/5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	100	.65 mm	70 Cel		128X16	128	0 Cel		TIN LEAD			DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		6 V	1.1 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified	10 ms	SPI	2048 bit	2.5 V		e0			.000003 Amp	4.4 mm
CAT93C76WI-TE13REVA	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		512 words	5			16	SMALL OUTLINE		8			1.27 mm	85 Cel		512X16	512	-40 Cel		MATTE TIN			DUAL			R-PDSO-G8		5.5 V	1.75 mm		3 MHz	3.9 mm	Not Qualified		MICROWIRE	8192 bit	2.5 V		e3				4.9 mm
CAT93C66WE-GT3	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		3 mA	256 words			3/5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	100	1.27 mm	125 Cel		256X16	256	-40 Cel					DUAL		SOFTWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		MICROWIRE	4096 bit						.00001 Amp
CAT93C57XA-GT2REVE	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		128 words	5			16	SMALL OUTLINE		8			1.27 mm	105 Cel		128X16	128	-40 Cel		NICKEL PALLADIUM GOLD			DUAL			R-PDSO-G8		5.5 V	2.03 mm		.5 MHz	5.23 mm	Not Qualified		MICROWIRE	2048 bit	2.5 V		e4				5.255 mm
CAT93C86UA	Onsemi	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		1024 words	5			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8		100	.65 mm	105 Cel		1KX16	1K	-40 Cel		TIN LEAD			DUAL			R-PDSO-G8	1	6 V	1.2 mm		1 MHz	3 mm	Not Qualified		MICROWIRE	16384 bit	2.5 V	1000000 PROGRAM/ERASE CYCLES; 100 YEAR DATA RETENTION	e0				4.4 mm
CAT93C56AJ-2.7TE7	Onsemi	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		128 words				16	SMALL OUTLINE					1.27 mm	70 Cel		128X16	128	0 Cel		TIN LEAD			DUAL			R-PDSO-G8		6 V	1.75 mm		.5 MHz	3.9 mm	Not Qualified	10 ms	MICROWIRE	2048 bit	2.7 V	MICROWIRE BUS SERIAL INTERFACE; AUTOMATIC WRITE	e0				4.9 mm
CAT93C57YI-1.8-GT2REVE	Onsemi	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		128 words	5			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.65 mm	85 Cel		128X16	128	-40 Cel		NICKEL PALLADIUM GOLD			DUAL			R-PDSO-G8		5.5 V	1.2 mm		.25 MHz	3 mm	Not Qualified		MICROWIRE	2048 bit	1.8 V		e4	40	260		4.4 mm
CAT93C66WI-1.8-T3E	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	5		2/5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	100	1.27 mm	85 Cel		256X16	256	-40 Cel		MATTE TIN			DUAL		SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified		MICROWIRE	4096 bit	4.5 V	IT ALSO OPERATES AT 0.25MHZ AT 1.8MIN	e3			.00001 Amp	4.9 mm
CAT93C76J-1.8TE13REVA	Onsemi	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		512 words	5			16	SMALL OUTLINE		8			1.27 mm	70 Cel		512X16	512	0 Cel		TIN LEAD			DUAL			R-PDSO-G8		5.5 V	1.75 mm		1 MHz	3.9 mm	Not Qualified		MICROWIRE	8192 bit	1.8 V		e0				4.9 mm
CAT93C56YE-GT2	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1 mA	128 words	5		3/5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	8	EEPROMs	100	.65 mm	125 Cel		128X16	128	-40 Cel		Nickel/Palladium/Gold (Ni/Pd/Au)			DUAL		SOFTWARE	R-PDSO-G8		5.5 V	1.2 mm	1000000 Write/Erase Cycles	.25 MHz	3 mm	Not Qualified		MICROWIRE	2048 bit	1.8 V		e4			.000004 Amp	4.4 mm
CAT93C66XA-TE13	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		256 words	5			16	SMALL OUTLINE		8		100	1.27 mm	105 Cel		256X16	256	-40 Cel		MATTE TIN			DUAL			R-PDSO-G8		6 V	2.03 mm		.5 MHz	5.25 mm	Not Qualified		MICROWIRE	4096 bit	2.5 V	1000000 PROGRAM/ERASE CYCLES; 100 YEAR DATA RETENTION	e3				5.3 mm
CAT140081TWI-G	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		1 mA	1024 words			3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	85 Cel		1KX8	1K	-40 Cel			1010DMMR		DUAL		SOFTWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	8192 bit						.000017 Amp
CAT93C86YE-1.8TE13REVC	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		1024 words	5			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.65 mm	125 Cel		1KX16	1K	-40 Cel		MATTE TIN			DUAL			R-PDSO-G8	1	6 V	1.1 mm		.5 MHz	3 mm	Not Qualified		MICROWIRE	16384 bit	1.8 V		e3				4.4 mm
CAT93C86VI-GT3REVC	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		1024 words	5			16	SMALL OUTLINE		8			1.27 mm	85 Cel		1KX16	1K	-40 Cel					DUAL			R-PDSO-G8		5.5 V	1.75 mm		1 MHz	3.9 mm	Not Qualified		MICROWIRE	16384 bit	2.5 V			NOT SPECIFIED	NOT SPECIFIED		4.9 mm
CAT93C66U	Onsemi	EEPROM	COMMERCIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		256 words	5			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8		100	.65 mm	70 Cel		256X16	256	0 Cel		TIN LEAD			DUAL			R-PDSO-G8	1	6 V	1.1 mm		.5 MHz	3 mm	Not Qualified		MICROWIRE	4096 bit	2.5 V	1000000 PROGRAM/ERASE CYCLES; 100 YEAR DATA RETENTION	e0				4.4 mm
CAT130019JWI-G	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		3 mA	64 words			3/5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	100	1.27 mm	85 Cel		64X16	64	-40 Cel					DUAL		SOFTWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		MICROWIRE	1024 bit
CAT93C57KI-REVE	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		131072 words	3			16	SMALL OUTLINE		8			1.27 mm	85 Cel		128KX16	128K	-40 Cel		TIN LEAD			DUAL			R-PDSO-G8		6 V	2.03 mm		.5 MHz	5.25 mm	Not Qualified		MICROWIRE	2097152 bit	2.5 V		e0				5.3 mm
CAT93C57WE	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words	5		3/5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	100	1.27 mm	125 Cel		128X16	128	-40 Cel		MATTE TIN			DUAL		SOFTWARE	R-PDSO-G8		6 V	1.75 mm	1000000 Write/Erase Cycles	.5 MHz	3.9 mm	Not Qualified		MICROWIRE	2048 bit	2.5 V	1000000 PROGRAM/ERASE CYCLES; 100 YEAR DATA RETENTION	e3			.00001 Amp	4.9 mm
CAT93C57VA-T2E	Onsemi	EEPROM CARD	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words	5		3/5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	100	1.27 mm	105 Cel		128X16	128	-40 Cel		MATTE TIN			DUAL		SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified		MICROWIRE	2048 bit	4.5 V	IT ALSO OPERATES AT 0.5MHZ AT 2.5MIN	e3			.00001 Amp	4.9 mm	2.7
CAT93C56YA-1.8TE13	Onsemi	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		128 words	5			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8		100	.65 mm	105 Cel		128X16	128	-40 Cel		MATTE TIN			DUAL			R-PDSO-G8	1	6 V	1.1 mm		.25 MHz	3 mm	Not Qualified		MICROWIRE	2048 bit	1.8 V	1000000 PROGRAM/ERASE CYCLES; 100 YEAR DATA RETENTION	e3				4.4 mm
CAT93C66J	Onsemi	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		256 words	5			16	SMALL OUTLINE		8		100	1.27 mm	70 Cel		256X16	256	0 Cel		TIN LEAD			DUAL			R-PDSO-G8		6 V	1.75 mm		.5 MHz	3.9 mm	Not Qualified		MICROWIRE	4096 bit	2.5 V	1000000 PROGRAM/ERASE CYCLES; 100 YEAR DATA RETENTION	e0				4.9 mm
NV24C16UVLT2G	Onsemi	EEPROM	AUTOMOTIVE	8	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	.5 mA	16384 words	3.3			1	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSSOP8,.12,20			100	.5 mm	125 Cel		16KX1	16K	-40 Cel		Matte Tin (Sn)	1010MMMR		DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	.9 mm	1000000 Write/Erase Cycles	1 MHz	2 mm		4 ms	I2C	16384 bit	1.7 V		e3	NOT SPECIFIED	260	.000002 Amp	2.3 mm
CAT93C57UI-1.8TE13REVE	Onsemi	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		131072 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.65 mm	85 Cel		128KX16	128K	-40 Cel		TIN LEAD			DUAL			R-PDSO-G8	1	6 V	1.2 mm		.25 MHz	3 mm	Not Qualified		MICROWIRE	2097152 bit	1.8 V		e0				4.4 mm
N24C64UDTG	Onsemi	EEPROM	INDUSTRIAL	8	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		65536 words	2.5			1	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH					.5 mm	85 Cel		64KX1	64K	-40 Cel		MATTE TIN			DUAL			R-PDSO-G8	1	5.5 V	.9 mm		1 MHz	2 mm		4 ms	I2C	65536 bit	1.7 V		e3	30	260		2.3 mm
CAT93C56UE-1.8	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		128 words	5			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8		100	.65 mm	125 Cel		128X16	128	-40 Cel		TIN LEAD			DUAL			R-PDSO-G8	1	6 V	1.1 mm		.25 MHz	3 mm	Not Qualified		MICROWIRE	2048 bit	1.8 V	1000000 PROGRAM/ERASE CYCLES; 100 YEAR DATA RETENTION	e0				4.4 mm
CAT93C46BYI-G	Onsemi	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1 mA	128 words	5	NO		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25				.65 mm	85 Cel	NO	128X8		-40 Cel	NO	NICKEL PALLADIUM GOLD		YES	DUAL	1	SOFTWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	4000 MHz	3 mm		3 ms	MICROWIRE	1024 bit	1.65 V		e4	30	260	.000002 Amp	4.4 mm		YES
CAT93C57XI-1.8-GT2	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		3 mA	128 words			2/5	16	SMALL OUTLINE	SOP8,.3	8	EEPROMs	100	1.27 mm	85 Cel		128X16	128	-40 Cel					DUAL		SOFTWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		MICROWIRE	2048 bit						.00001 Amp
CAT93C86VA-GT2REVC	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		1024 words	5			16	SMALL OUTLINE		8			1.27 mm	105 Cel		1KX16	1K	-40 Cel		NICKEL PALLADIUM GOLD			DUAL			R-PDSO-G8		5.5 V	1.75 mm		1 MHz	3.9 mm	Not Qualified		MICROWIRE	16384 bit	2.5 V		e4				4.9 mm
CAT130041SWI-G	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		3 mA	256 words			3/5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	100	1.27 mm	85 Cel		256X16	256	-40 Cel					DUAL		SOFTWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		MICROWIRE	4096 bit
CAT93C56XI-1.8-T2E	Onsemi	EEPROM CARD	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words	5		2/5	16	SMALL OUTLINE	SOP8,.3	8	EEPROMs	100	1.27 mm	85 Cel		128X16	128	-40 Cel		MATTE TIN			DUAL		SOFTWARE	R-PDSO-G8	1	5.5 V	2.03 mm	1000000 Write/Erase Cycles	1 MHz	5.23 mm	Not Qualified		MICROWIRE	2048 bit	4.5 V	IT ALSO OPERATES AT 0.25MHZ AT 1.8MIN	e3			.00001 Amp	5.255 mm	2.7
CAT93C76S-REVA	Onsemi	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		512 words	5			16	SMALL OUTLINE		8			1.27 mm	70 Cel		512X16	512	0 Cel		TIN LEAD			DUAL			R-PDSO-G8		5.5 V	1.75 mm		3 MHz	3.9 mm	Not Qualified		MICROWIRE	8192 bit	2.5 V		e0				4.9 mm
CAT93C86ZD4A-T2	Onsemi	EEPROM	INDUSTRIAL	8	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	3 mA	1024 words	5		3/5	16	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,25	8	EEPROMs	100	.65 mm	105 Cel		1KX16	1K	-40 Cel		MATTE TIN			DUAL		HARDWARE/SOFTWARE	S-PDSO-N8	1	5.5 V	.8 mm	1000000 Write/Erase Cycles	3 MHz	3 mm	Not Qualified		MICROWIRE	16384 bit	4.5 V	IT ALSO OPERATES AT 1MHZ AT 2.5MIN	e3			.00001 Amp	3 mm
CAT93C56AK-2.5TE7	Onsemi	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		128 words				16	SMALL OUTLINE					1.27 mm	70 Cel		128X16	128	0 Cel		TIN LEAD			DUAL			R-PDSO-G8		6 V	2.03 mm		.5 MHz	5.25 mm	Not Qualified	10 ms	MICROWIRE	2048 bit	2.5 V	MICROWIRE BUS SERIAL INTERFACE; AUTOMATIC WRITE	e0				5.3 mm
CAT93C86VE-1.8T2C	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		3 mA	1024 words			2/5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	100	1.27 mm	125 Cel		1KX16	1K	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		MICROWIRE	16384 bit						.00001 Amp
CAT140089LWI-G	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		1 mA	1024 words			3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	85 Cel		1KX8	1K	-40 Cel			1010DMMR		DUAL		SOFTWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	8192 bit						.000017 Amp
CAT93C57ZD4I-GT2E	Onsemi	EEPROM CARD	INDUSTRIAL	8	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	3 mA	128 words	5		3/5	16	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,25	8	EEPROMs	100	.65 mm	85 Cel		128X16	128	-40 Cel		MATTE TIN			DUAL		SOFTWARE	S-PDSO-N8	1	5.5 V	.8 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified		MICROWIRE	2048 bit	4.5 V	IT ALSO OPERATES AT 0.5MHZ AT 2.5MIN	e3			.00001 Amp	3 mm	2.7
CAT93C56YI-1.8-T3E	Onsemi	EEPROM CARD	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words	5		2/5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	8	EEPROMs	100	.65 mm	85 Cel		128X16	128	-40 Cel		MATTE TIN			DUAL		SOFTWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified		MICROWIRE	2048 bit	4.5 V	IT ALSO OPERATES AT 0.25MHZ AT 1.8MIN	e3			.00001 Amp	4.4 mm	2.7
CAT34C02YIT5	Onsemi	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1 mA	256 words	5		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	100	.65 mm	85 Cel		256X8	256	-40 Cel		MATTE TIN	1010DDDR		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	2048 bit	1.7 V		e3			.000001 Amp	4.4 mm
CAT93C56API-1.8	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		128 words	5			16	IN-LINE					2.54 mm	85 Cel		128X16	128	-40 Cel		TIN LEAD			DUAL			R-PDIP-T8		6 V	4.57 mm		.25 MHz	7.62 mm	Not Qualified	10 ms	MICROWIRE	2048 bit	1.8 V	MICROWIRE BUS SERIAL INTERFACE; AUTOMATIC WRITE	e0				9.36 mm
CAT93C57LE-G	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	SERIAL		3 mA	128 words			3/5	16	IN-LINE	DIP8,.3	8	EEPROMs	100	2.54 mm	125 Cel		128X16	128	-40 Cel		MATTE TIN			DUAL		SOFTWARE	R-PDIP-T8	1			1000000 Write/Erase Cycles			Not Qualified		MICROWIRE	2048 bit			e3			.00001 Amp
CAT93C86VA-1.8T3C	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		3 mA	1024 words			2/5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	100	1.27 mm	105 Cel		1KX16	1K	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		MICROWIRE	16384 bit						.00001 Amp
CAT64LC40UITE13	Onsemi	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	4.5		3/5	16	SMALL OUTLINE	TSSOP8,.25		EEPROMs	100	.65 mm	85 Cel		256X16	256	-40 Cel		TIN LEAD			DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		6 V	1.2 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified	10 ms	SPI	4096 bit	2.5 V		e0			.000003 Amp	4.4 mm
CAT93C76JA-1.8TE13REVA	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		512 words	5			16	SMALL OUTLINE		8			1.27 mm	105 Cel		512X16	512	-40 Cel		TIN LEAD			DUAL			R-PDSO-G8		5.5 V	1.75 mm		1 MHz	3.9 mm	Not Qualified		MICROWIRE	8192 bit	1.8 V		e0				4.9 mm
CAT93C57W	Onsemi	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		128 words	5			16	SMALL OUTLINE		8		100	1.27 mm	70 Cel		128X16	128	0 Cel		MATTE TIN			DUAL			R-PDSO-G8		6 V	1.75 mm		.5 MHz	3.9 mm	Not Qualified		MICROWIRE	2048 bit	2.5 V	1000000 PROGRAM/ERASE CYCLES; 100 YEAR DATA RETENTION	e3				4.9 mm
CAT93C86LA	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	1024 words	5		3/5	16	IN-LINE	DIP8,.3	8	EEPROMs	100	2.54 mm	105 Cel		1KX16	1K	-40 Cel		MATTE TIN			DUAL		HARDWARE/SOFTWARE	R-PDIP-T8		6 V	4.57 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified		MICROWIRE	16384 bit	2.5 V	1000000 PROGRAM/ERASE CYCLES; 100 YEAR DATA RETENTION	e3			.00001 Amp	9.36 mm
CAT93C66ASI-2.5TE13	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		256 words				16	SMALL OUTLINE					1.27 mm	85 Cel		256X16	256	-40 Cel		TIN LEAD			DUAL			R-PDSO-G8		6 V	1.75 mm		.5 MHz	3.9 mm	Not Qualified	10 ms	MICROWIRE	4096 bit	2.5 V	MICROWIRE BUS SERIAL INTERFACE; AUTOMATIC WRITE	e0				4.9 mm
CAT93C66XI-GT2REVE	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		256 words	5			16	SMALL OUTLINE		8			1.27 mm	85 Cel		256X16	256	-40 Cel		NICKEL PALLADIUM GOLD			DUAL			R-PDSO-G8		5.5 V	2.03 mm		.5 MHz	5.23 mm	Not Qualified		MICROWIRE	4096 bit	2.5 V		e4				5.255 mm

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.