HUSSON EEPROM 14

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	I2C Control Byte	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)
NV34C04MUW3VTBG	Onsemi	EEPROM	AUTOMOTIVE	8	HUSSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	1 mA	512 words	2.5	8	SMALL OUTLINE, HEAT SINK/SLUG, ULTRA THIN PROFILE, SHRINK PITCH	SOLCC8,.11,20		100	.5 mm	125 Cel	NO		512X8	512	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	1010DDDR	DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	1	3.6 V	.55 mm	1000000 Write/Erase Cycles	1 MHz	2 mm	4 ms	I2C	4096 bit	1.7 V	e4	30	260	.000001 Amp	3 mm		3.6
NV34C02WF	Onsemi	EEPROM	AUTOMOTIVE	8	HUSSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	2 mA	256 words	3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, ULTRA THIN PROFILE, SHRINK PITCH	SOLCC8,.11,20		100	.5 mm	125 Cel	NO		256X8	256	-40 Cel		1010DDDR	DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		5.5 V	.55 mm	2000000 Write/Erase Cycles	400 MHz	2 mm	5 ms	I2C	2048 bit	1.7 V				.000001 Amp	3 mm	900 ns
NV34C04MUW3VTG	Onsemi	EEPROM	AUTOMOTIVE	8	HUSSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	1 mA	512 words	2.5	8	SMALL OUTLINE, HEAT SINK/SLUG, ULTRA THIN PROFILE, SHRINK PITCH	SOLCC8,.11,20		100	.5 mm	125 Cel	NO		512X8	512	-40 Cel		1010DDDR	DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.55 mm	1000000 Write/Erase Cycles	1 MHz	2 mm	4 ms	I2C	4096 bit	1.7 V		NOT SPECIFIED	NOT SPECIFIED	.000001 Amp	3 mm		3.6
NV34C04MU3ETG	Onsemi	EEPROM	AUTOMOTIVE	8	HUSSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	1 mA	512 words	2.5	8	SMALL OUTLINE, HEAT SINK/SLUG, ULTRA THIN PROFILE, SHRINK PITCH	SOLCC8,.11,20		100	.5 mm	125 Cel	NO		512X8	512	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	1010DDDR	DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.55 mm	1000000 Write/Erase Cycles	1 MHz	2 mm	4 ms	I2C	4096 bit	1.7 V	e4			.000001 Amp	3 mm		3.6
NV93C46RBMUW3VTBG	Onsemi	EEPROM	AUTOMOTIVE	8	HUSSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	1 mA	64 words	5	16	SMALL OUTLINE, HEAT SINK/SLUG, ULTRA THIN PROFILE, SHRINK PITCH	SOLCC8,.11,20	8	100	.5 mm	125 Cel	NO	3-STATE	64X16	64	-40 Cel	NICKEL PALLADIUM GOLD		DUAL	SOFTWARE	R-PDSO-N8	1	5.5 V	.55 mm	1000000 Write/Erase Cycles	2 MHz	2 mm	5 ms	MICROWIRE	1024 bit	2.5 V	e4	30	260	.000003 Amp	3 mm	250 ns	5
NV93C46BMUW3VTBG	Onsemi	EEPROM	AUTOMOTIVE	8	HUSSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	1 mA	64 words	5	16	SMALL OUTLINE, HEAT SINK/SLUG, ULTRA THIN PROFILE, SHRINK PITCH	SOLCC8,.11,20	8	100	.5 mm	125 Cel	NO	3-STATE	64X16	64	-40 Cel	NICKEL PALLADIUM GOLD		DUAL	SOFTWARE	R-PDSO-N8	1	5.5 V	.55 mm	1000000 Write/Erase Cycles	2 MHz	2 mm	5 ms	MICROWIRE	1024 bit	2.5 V	e4	30	260	.000003 Amp	3 mm	250 ns	5
NV25020MUW3VLT3G	Onsemi	EEPROM	AUTOMOTIVE	8	HUSSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	256 words	5	8	SMALL OUTLINE, HEAT SINK/SLUG, ULTRA THIN PROFILE, SHRINK PITCH	SOLCC8,.11,20		200	.5 mm	125 Cel	NO	3-STATE	256X8	256	-40 Cel			DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		5.5 V	.55 mm	4000000 Write/Erase Cycles	20 MHz	2 mm	4 ms	SPI	2048 bit	1.7 V		NOT SPECIFIED	NOT SPECIFIED	.000003 Amp	3 mm
NV25010MUW3VLT3G	Onsemi	EEPROM	AUTOMOTIVE	8	HUSSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	128 words	5	8	SMALL OUTLINE, HEAT SINK/SLUG, ULTRA THIN PROFILE, SHRINK PITCH	SOLCC8,.11,20		200	.5 mm	125 Cel	NO	3-STATE	128X8	128	-40 Cel			DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		5.5 V	.55 mm	4000000 Write/Erase Cycles	20 MHz	2 mm	4 ms	SPI	1024 bit	1.7 V		NOT SPECIFIED	NOT SPECIFIED	.000003 Amp	3 mm
NV25080MUW2VTAG	Onsemi	EEPROM	AUTOMOTIVE	8	HUSSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD		SYNCHRONOUS	3 mA	1024 words	5	8	SMALL OUTLINE, HEAT SINK/SLUG, ULTRA THIN PROFILE, SHRINK PITCH	SOLCC8,.08,20		100	.5 mm	125 Cel		3-STATE	1KX8	1K	-40 Cel			DUAL	HARDWARE/SOFTWARE	S-PDSO-N8		5.5 V	.55 mm	1000000 Write/Erase Cycles	10 MHz	2 mm	5 ms	SPI	8192 bit	1.8 V				.000002 Amp	2 mm	80 ns	5
NV25160MUW3VLT3G	Onsemi	EEPROM	AUTOMOTIVE	8	HUSSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	2048 words	5	8	SMALL OUTLINE, HEAT SINK/SLUG, ULTRA THIN PROFILE, SHRINK PITCH	SOLCC8,.11,20		200	.5 mm	125 Cel	NO		2KX8	2K	-40 Cel			DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		5.5 V	.55 mm	4000000 Write/Erase Cycles	20 MHz	2 mm	4 ms	SPI	16384 bit	1.7 V		NOT SPECIFIED	NOT SPECIFIED	.000003 Amp	3 mm
NV25320MUW3VLT3G	Onsemi	EEPROM	AUTOMOTIVE	8	HUSSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	4096 words	5	8	SMALL OUTLINE, HEAT SINK/SLUG, ULTRA THIN PROFILE, SHRINK PITCH	SOLCC8,.11,20		200	.5 mm	125 Cel	NO		4KX8	4K	-40 Cel			DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		5.5 V	.55 mm	4000000 Write/Erase Cycles	20 MHz	2 mm	4 ms	SPI	32768 bit	1.7 V		NOT SPECIFIED	NOT SPECIFIED	.000003 Amp	3 mm
NV25040MUW3VLT3G	Onsemi	EEPROM	AUTOMOTIVE	8	HUSSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	512 words	5	8	SMALL OUTLINE, HEAT SINK/SLUG, ULTRA THIN PROFILE, SHRINK PITCH	SOLCC8,.11,20		200	.5 mm	125 Cel	NO	3-STATE	512X8	512	-40 Cel			DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		5.5 V	.55 mm	4000000 Write/Erase Cycles	20 MHz	2 mm	4 ms	SPI	4096 bit	1.7 V		NOT SPECIFIED	NOT SPECIFIED	.000003 Amp	3 mm
NV25640MUW3VLT3G	Onsemi	EEPROM	AUTOMOTIVE	8	HUSSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	8192 words	5	8	SMALL OUTLINE, HEAT SINK/SLUG, ULTRA THIN PROFILE, SHRINK PITCH	SOLCC8,.11,20		200	.5 mm	125 Cel	NO		8KX8	8K	-40 Cel			DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		5.5 V	.55 mm	4000000 Write/Erase Cycles	20 MHz	2 mm	4 ms	SPI	65536 bit	1.7 V		NOT SPECIFIED	NOT SPECIFIED	.000003 Amp	3 mm
NV25080MUW3VLT3G	Onsemi	EEPROM	AUTOMOTIVE	8	HUSSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	1024 words	5	8	SMALL OUTLINE, HEAT SINK/SLUG, ULTRA THIN PROFILE, SHRINK PITCH	SOLCC8,.11,20		200	.5 mm	125 Cel	NO		1KX8	1K	-40 Cel			DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		5.5 V	.55 mm	4000000 Write/Erase Cycles	20 MHz	2 mm	4 ms	SPI	8192 bit	1.7 V		NOT SPECIFIED	NOT SPECIFIED	.000003 Amp	3 mm

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.