HVQCCN EEPROM 28

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	I2C Control Byte	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Programming Voltage (V)
M24C16-FMC6TG	STMicroelectronics	EEPROM	INDUSTRIAL	8	HVQCCN	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	1 mA	2048 words	1.8	1.8/5	8	CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20	EEPROMs	200	.5 mm	85 Cel	OPEN-DRAIN	2KX8	2K	-40 Cel	NICKEL PALLADIUM GOLD	1010DDDR	DUAL		R-XDSO-N8	1	5.5 V	.6 mm	4000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	16384 bit	1.7 V		e4	30	260	.000001 Amp	3 mm	1.8
M24C16-RMC6TG	STMicroelectronics	EEPROM	INDUSTRIAL	8	HVQCCN	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	1 mA	2048 words	2.5	2/5	8	CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20	EEPROMs	200	.5 mm	85 Cel	OPEN-DRAIN	2KX8	2K	-40 Cel	NICKEL PALLADIUM GOLD	1010DDDR	DUAL		R-XDSO-N8	1	5.5 V	.6 mm	4000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	16384 bit	1.8 V		e4		260	.000001 Amp	3 mm	2.5
CAT25640HU3E-T3	Onsemi	EEPROM	AUTOMOTIVE	8	HVQCCN	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		8192 words	5		8	CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE			100	.5 mm	125 Cel		8KX8	8K	-40 Cel	MATTE TIN		BOTTOM		R-XBCC-N8		5.5 V	.55 mm		5 MHz	2 mm	Not Qualified	5 ms	SPI	65536 bit	2.5 V	100 YEAR DATA RETENTION	e3				3 mm
CAT25640VP2E-T3	Onsemi	EEPROM	AUTOMOTIVE	8	HVQCCN	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		8192 words	5		8	CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE			100	.5 mm	125 Cel		8KX8	8K	-40 Cel	MATTE TIN		BOTTOM		R-PBCC-N8		5.5 V	.8 mm		5 MHz	2 mm	Not Qualified	5 ms	SPI	65536 bit	2.5 V	100 YEAR DATA RETENTION	e3				3 mm
M24C16-FMC5P	STMicroelectronics	EEPROM	OTHER	8	HVQCCN	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	1 mA	2048 words	1.8	1.8/5	8	CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20	EEPROMs	200	.5 mm	85 Cel	OPEN-DRAIN	2KX8	2K	-20 Cel		1010DDDR	DUAL		R-XDSO-N8		5.5 V	.6 mm	4000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	16384 bit	1.7 V					.000001 Amp	3 mm	1.8
M24C16-WMC5G	STMicroelectronics	EEPROM	OTHER	8	HVQCCN	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	1 mA	2048 words			8	CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20		200	.5 mm	85 Cel	OPEN-DRAIN	2KX8	2K	-20 Cel		1010DDDR	DUAL		R-XDSO-N8		5.5 V	.6 mm	4000000 Write/Erase Cycles	.4 MHz	2 mm		5 ms	I2C	16384 bit	2.5 V					.000002 Amp	3 mm
M24C16-FMC6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	HVQCCN	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	1 mA	2048 words	1.8		8	CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20		200	.5 mm	85 Cel	OPEN-DRAIN	2KX8	2K	-40 Cel		1010DDDR	DUAL		R-XDSO-N8		5.5 V	.6 mm	4000000 Write/Erase Cycles	.4 MHz	2 mm		5 ms	I2C	16384 bit	1.7 V					.000001 Amp	3 mm	1.8
M24C16-WMC5P	STMicroelectronics	EEPROM	OTHER	8	HVQCCN	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	1 mA	2048 words			8	CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20		200	.5 mm	85 Cel	OPEN-DRAIN	2KX8	2K	-20 Cel		1010DDDR	DUAL		R-XDSO-N8		5.5 V	.6 mm	4000000 Write/Erase Cycles	.4 MHz	2 mm		5 ms	I2C	16384 bit	2.5 V					.000002 Amp	3 mm
M24C16-RMC6G	STMicroelectronics	EEPROM	INDUSTRIAL	8	HVQCCN	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	1 mA	2048 words	2.5	2/5	8	CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20	EEPROMs	200	.5 mm	85 Cel	OPEN-DRAIN	2KX8	2K	-40 Cel		1010DDDR	DUAL		R-XDSO-N8		5.5 V	.6 mm	4000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	16384 bit	1.8 V					.000001 Amp	3 mm	2.5
M24C16-FMC6G	STMicroelectronics	EEPROM	INDUSTRIAL	8	HVQCCN	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	1 mA	2048 words	1.8		8	CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20		200	.5 mm	85 Cel	OPEN-DRAIN	2KX8	2K	-40 Cel		1010DDDR	DUAL		R-XDSO-N8		5.5 V	.6 mm	4000000 Write/Erase Cycles	.4 MHz	2 mm		5 ms	I2C	16384 bit	1.7 V					.000001 Amp	3 mm	1.8
M24C16-WMC6P	STMicroelectronics	EEPROM	INDUSTRIAL	8	HVQCCN	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	1 mA	2048 words		3/5	8	CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20	EEPROMs	200	.5 mm	85 Cel	OPEN-DRAIN	2KX8	2K	-40 Cel		1010DDDR	DUAL		R-XDSO-N8		5.5 V	.6 mm	4000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	16384 bit	2.5 V					.000002 Amp	3 mm
M24C16-RMC5TG	STMicroelectronics	EEPROM	OTHER	8	HVQCCN	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	1 mA	2048 words	2.5		8	CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20		200	.5 mm	85 Cel	OPEN-DRAIN	2KX8	2K	-20 Cel		1010DDDR	DUAL		R-XDSO-N8		5.5 V	.6 mm	4000000 Write/Erase Cycles	.4 MHz	2 mm		5 ms	I2C	16384 bit	1.8 V					.000001 Amp	3 mm	2.5
M24C16-RMC6P	STMicroelectronics	EEPROM	INDUSTRIAL	8	HVQCCN	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	1 mA	2048 words	2.5	2/5	8	CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20	EEPROMs	200	.5 mm	85 Cel	OPEN-DRAIN	2KX8	2K	-40 Cel		1010DDDR	DUAL		R-XDSO-N8		5.5 V	.6 mm	4000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	16384 bit	1.8 V					.000001 Amp	3 mm	2.5
M24C16-RMC5G	STMicroelectronics	EEPROM	OTHER	8	HVQCCN	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	1 mA	2048 words	2.5		8	CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20		200	.5 mm	85 Cel	OPEN-DRAIN	2KX8	2K	-20 Cel		1010DDDR	DUAL		R-XDSO-N8		5.5 V	.6 mm	4000000 Write/Erase Cycles	.4 MHz	2 mm		5 ms	I2C	16384 bit	1.8 V					.000001 Amp	3 mm	2.5
M24C16-WMC6G	STMicroelectronics	EEPROM	INDUSTRIAL	8	HVQCCN	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	1 mA	2048 words		3/5	8	CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20	EEPROMs	200	.5 mm	85 Cel	OPEN-DRAIN	2KX8	2K	-40 Cel		1010DDDR	DUAL		R-XDSO-N8		5.5 V	.6 mm	4000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	16384 bit	2.5 V					.000002 Amp	3 mm
M24C16-FMC6P	STMicroelectronics	EEPROM	INDUSTRIAL	8	HVQCCN	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	1 mA	2048 words	1.8		8	CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20		200	.5 mm	85 Cel	OPEN-DRAIN	2KX8	2K	-40 Cel		1010DDDR	DUAL		R-XDSO-N8		5.5 V	.6 mm	4000000 Write/Erase Cycles	.4 MHz	2 mm		5 ms	I2C	16384 bit	1.7 V					.000001 Amp	3 mm	1.8
M24C16-WMC6TG	STMicroelectronics	EEPROM	INDUSTRIAL	8	HVQCCN	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	1 mA	2048 words		3/5	8	CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20	EEPROMs	200	.5 mm	85 Cel	OPEN-DRAIN	2KX8	2K	-40 Cel		1010DDDR	DUAL		R-XDSO-N8		5.5 V	.6 mm	4000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	16384 bit	2.5 V			NOT SPECIFIED	NOT SPECIFIED	.000002 Amp	3 mm
M24C16-FMC5TG	STMicroelectronics	EEPROM	OTHER	8	HVQCCN	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	1 mA	2048 words	1.8	1.8/5	8	CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20	EEPROMs	200	.5 mm	85 Cel	OPEN-DRAIN	2KX8	2K	-20 Cel	NICKEL PALLADIUM GOLD	1010DDDR	DUAL		R-XDSO-N8	1	5.5 V	.6 mm	4000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	16384 bit	1.7 V		e4	30	260	.000001 Amp	3 mm	1.8
M24C16-RMC5TP	STMicroelectronics	EEPROM	OTHER	8	HVQCCN	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	1 mA	2048 words	2.5		8	CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20		200	.5 mm	85 Cel	OPEN-DRAIN	2KX8	2K	-20 Cel		1010DDDR	DUAL		R-XDSO-N8		5.5 V	.6 mm	4000000 Write/Erase Cycles	.4 MHz	2 mm		5 ms	I2C	16384 bit	1.8 V					.000001 Amp	3 mm	2.5
M24C16-WMC6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	HVQCCN	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	1 mA	2048 words		3/5	8	CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20	EEPROMs	200	.5 mm	85 Cel	OPEN-DRAIN	2KX8	2K	-40 Cel		1010DDDR	DUAL		R-XDSO-N8		5.5 V	.6 mm	4000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	16384 bit	2.5 V			NOT SPECIFIED	NOT SPECIFIED	.000002 Amp	3 mm
M24C16-FMC5G	STMicroelectronics	EEPROM	OTHER	8	HVQCCN	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	1 mA	2048 words	1.8	1.8/5	8	CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20	EEPROMs	200	.5 mm	85 Cel	OPEN-DRAIN	2KX8	2K	-20 Cel	NICKEL PALLADIUM GOLD	1010DDDR	DUAL		R-XDSO-N8	1	5.5 V	.6 mm	4000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	16384 bit	1.7 V		e4	30	260	.000001 Amp	3 mm	1.8
M24C16-WMC5TG	STMicroelectronics	EEPROM	OTHER	8	HVQCCN	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	1 mA	2048 words			8	CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20		200	.5 mm	85 Cel	OPEN-DRAIN	2KX8	2K	-20 Cel		1010DDDR	DUAL		R-XDSO-N8		5.5 V	.6 mm	4000000 Write/Erase Cycles	.4 MHz	2 mm		5 ms	I2C	16384 bit	2.5 V					.000002 Amp	3 mm
M24C16-FMC5TP	STMicroelectronics	EEPROM	OTHER	8	HVQCCN	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	1 mA	2048 words	1.8	1.8/5	8	CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20	EEPROMs	200	.5 mm	85 Cel	OPEN-DRAIN	2KX8	2K	-20 Cel		1010DDDR	DUAL		R-XDSO-N8		5.5 V	.6 mm	4000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	16384 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED	.000001 Amp	3 mm	1.8
M24C16-RMC6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	HVQCCN	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	1 mA	2048 words	2.5	2/5	8	CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20	EEPROMs	200	.5 mm	85 Cel	OPEN-DRAIN	2KX8	2K	-40 Cel		1010DDDR	DUAL		R-XDSO-N8		5.5 V	.6 mm	4000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	16384 bit	1.8 V			NOT SPECIFIED	NOT SPECIFIED	.000001 Amp	3 mm	2.5
M24C16-WMC5TP	STMicroelectronics	EEPROM	OTHER	8	HVQCCN	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	1 mA	2048 words			8	CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20		200	.5 mm	85 Cel	OPEN-DRAIN	2KX8	2K	-20 Cel		1010DDDR	DUAL		R-XDSO-N8		5.5 V	.6 mm	4000000 Write/Erase Cycles	.4 MHz	2 mm		5 ms	I2C	16384 bit	2.5 V					.000002 Amp	3 mm
M24C16-RMC5P	STMicroelectronics	EEPROM	OTHER	8	HVQCCN	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	1 mA	2048 words	2.5		8	CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20		200	.5 mm	85 Cel	OPEN-DRAIN	2KX8	2K	-20 Cel		1010DDDR	DUAL		R-XDSO-N8		5.5 V	.6 mm	4000000 Write/Erase Cycles	.4 MHz	2 mm		5 ms	I2C	16384 bit	1.8 V					.000001 Amp	3 mm	2.5
DS28DG02G-3C+T	Maxim Integrated	EEPROM	INDUSTRIAL	36	HVQCCN	SQUARE	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	.8 mA	256 words	3.3	2.5/5	8	CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE	LCC36,.25SQ,20	EEPROMs	40	.5 mm	85 Cel		256X8	256	-40 Cel	MATTE TIN		QUAD	HARDWARE	S-XQCC-N36	1	5.25 V	.8 mm	200000 Write/Erase Cycles	2 MHz	6 mm	Not Qualified		SPI	2048 bit	2.2 V		e3	30	260	.0001 Amp	6 mm	3
DS28DG02G-3C+	Maxim Integrated	EEPROM	INDUSTRIAL	36	HVQCCN	SQUARE	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	.8 mA	256 words	3.3	2.5/5	8	CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE	LCC36,.25SQ,20	EEPROMs	40	.5 mm	85 Cel		256X8	256	-40 Cel	MATTE TIN		QUAD	HARDWARE	S-XQCC-N36	1	5.25 V	.8 mm	200000 Write/Erase Cycles	2 MHz	6 mm	Not Qualified		SPI	2048 bit	2.2 V		e3	30	260	.0001 Amp	6 mm	3

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.