HVSON EEPROM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	I2C Control Byte	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length
M24C32-WMC6P	STMicroelectronics	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	5 mA	4096 words		3/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20		EEPROMs	40	.5 mm	85 Cel	4KX8	4K	-40 Cel	MATTE TIN	1010DDDR	DUAL	HARDWARE	R-PDSO-N8	1	5.5 V	.6 mm	1000000 Write/Erase Cycles	1 MHz	2 mm	Not Qualified	5 ms	I2C	32768 bit	2.5 V	e3			.000002 Amp	3 mm
M95160-DRMF8TG/K	STMicroelectronics	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS		2048 words	2.5		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.5 mm	105 Cel	2KX8	2K	-40 Cel			DUAL		R-PDSO-N8		5.5 V	.8 mm		10 MHz	2 mm		4 ms	SPI	16384 bit	1.8 V					3 mm
M95080-WMC6P	STMicroelectronics	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		1024 words			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.5 mm	85 Cel	1KX8	1K	-40 Cel			DUAL		R-PDSO-N8		5.5 V	.6 mm		10 MHz	2 mm		5 ms	SPI	8192 bit	2.5 V					3 mm
M24128-DFMC6P	STMicroelectronics	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	2.5 mA	16384 words		1.8/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20		EEPROMs	200	.5 mm	85 Cel	16KX8	16K	-40 Cel		1010DDDR	DUAL	HARDWARE	R-PDSO-N8		5.5 V	.6 mm	4000000 Write/Erase Cycles	1 MHz	2 mm	Not Qualified	5 ms	I2C	131072 bit	1.7 V		NOT SPECIFIED	NOT SPECIFIED	.000001 Amp	3 mm
M24C16-RMB3P/W	STMicroelectronics	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	.8 mA	2048 words	2.5	2/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20		EEPROMs	40	.5 mm	125 Cel	2KX8	2K	-40 Cel		1010MMMR	DUAL	HARDWARE	R-XDSO-N8		5.5 V	.6 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	10 ms	I2C	16384 bit	1.8 V		NOT SPECIFIED	NOT SPECIFIED	.000001 Amp	3 mm
M24C16-WMB6G	STMicroelectronics	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	2 mA	2048 words	5	3/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20		EEPROMs	40	.5 mm	85 Cel	2KX8	2K	-40 Cel		1010MMMR	DUAL	HARDWARE	R-XDSO-N8		5.5 V	.6 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	16384 bit	2.5 V		NOT SPECIFIED	NOT SPECIFIED	.000001 Amp	3 mm
M95640-DRMF8TP/K	STMicroelectronics	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS		8192 words	2.5		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.5 mm	105 Cel	8KX8	8K	-40 Cel			DUAL		R-PDSO-N8		5.5 V	.8 mm		10 MHz	2 mm		4 ms	SPI	65536 bit	1.8 V					3 mm
M95020-MC6TP	STMicroelectronics	EEPROM			HVSON				1	CMOS			SERIAL	SYNCHRONOUS		2048 words	5		1						.5 mm		2KX1	2K								5.5 V	.6 mm		5 MHz	2 mm		5 ms	SPI	2048 bit	4.5 V		NOT SPECIFIED	NOT SPECIFIED		3 mm
M95128-WMC6TG	STMicroelectronics	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	3 mA	16384 words	5		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.5 mm	85 Cel	16KX8	16K	-40 Cel			DUAL		R-PDSO-N8		5.5 V	.6 mm		20 MHz	2 mm		5 ms	SPI	131072 bit	2.5 V					3 mm
M24C16-WMB3G/S	STMicroelectronics	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	2048 words	5	3/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20		EEPROMs	40	.5 mm	125 Cel	2KX8	2K	-40 Cel		1010MMMR	DUAL	HARDWARE	R-XDSO-N8		5.5 V	.6 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	16384 bit	2.5 V		NOT SPECIFIED	NOT SPECIFIED	.000002 Amp	3 mm
M24C08-WMB3/S	STMicroelectronics	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	1024 words	5	3/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20		EEPROMs	40	.5 mm	125 Cel	1KX8	1K	-40 Cel	TIN LEAD	1010DMMR	DUAL	HARDWARE	R-XDSO-N8		5.5 V	.6 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	8192 bit	2.5 V	e0			.000002 Amp	3 mm
M93C86-RMC6TG	STMicroelectronics	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		1024 words	5		16	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		8			.5 mm	85 Cel	1KX16	1K	-40 Cel			DUAL		R-PDSO-N8	1	5.5 V	.6 mm		1 MHz	2 mm		10 ms	MICROWIRE	16384 bit	1.8 V					3 mm
M93C56-WMC6TG	STMicroelectronics	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		128 words	5		16	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		8			.5 mm	85 Cel	128X16	128	-40 Cel			DUAL		R-PDSO-N8		5.5 V	.6 mm		2 MHz	2 mm		5 ms	MICROWIRE	2048 bit	2.5 V					3 mm
M95320-RMB3G/K	STMicroelectronics	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		4096 words	5		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.5 mm	125 Cel	4KX8	4K	-40 Cel			DUAL		R-PDSO-N8		5.5 V	.6 mm		5 MHz	2 mm		4 ms	SPI	32768 bit	1.8 V		NOT SPECIFIED	NOT SPECIFIED		3 mm
M24C32-FMB6G/C	STMicroelectronics	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		4096 words	1.8		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.5 mm	85 Cel	4KX8	4K	-40 Cel			DUAL		R-XDSO-N8		5.5 V	.6 mm		.4 MHz	2 mm	Not Qualified	10 ms	I2C	32768 bit	1.7 V		NOT SPECIFIED	NOT SPECIFIED		3 mm
M93C56-MB3TP	STMicroelectronics	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	2 mA	128 words	5	5	16	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20	8	EEPROMs	40	.5 mm	125 Cel	128X16	128	-40 Cel			DUAL	SOFTWARE	R-XDSO-N8		5.5 V	.6 mm	1000000 Write/Erase Cycles	2 MHz	2 mm	Not Qualified	10 ms	MICROWIRE	2048 bit	4.5 V		NOT SPECIFIED	NOT SPECIFIED	.000015 Amp	3 mm
M24128-DRMF3TG/K	STMicroelectronics	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS		16384 words	2.5		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.5 mm	125 Cel	16KX8	16K	-40 Cel			DUAL		R-PDSO-N8	1	5.5 V	.8 mm		1 MHz	2 mm		4 ms	I2C	131072 bit	1.8 V					3 mm
M93C86-WMB3TP	STMicroelectronics	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	2 mA	1024 words	5	3/5	16	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20	8	EEPROMs	40	.5 mm	125 Cel	1KX16	1K	-40 Cel			DUAL	SOFTWARE	R-XDSO-N8		5.5 V	.6 mm	1000000 Write/Erase Cycles	2 MHz	2 mm	Not Qualified	5 ms	MICROWIRE	16384 bit	2.5 V		NOT SPECIFIED	NOT SPECIFIED	.000005 Amp	3 mm
M24C32-WMC6G/K	STMicroelectronics	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		4096 words	5		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.5 mm	85 Cel	4KX8	4K	-40 Cel			DUAL		R-PDSO-N8		5.5 V	.6 mm		1 MHz	2 mm		5 ms	I2C	32768 bit	2.5 V					3 mm
M95512-RMB3TP/K	STMicroelectronics	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		65536 words	5		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.5 mm	125 Cel	64KX8	64K	-40 Cel			DUAL		R-PDSO-N8		5.5 V	.6 mm		5 MHz	2 mm		4 ms	SPI	524288 bit	1.8 V		NOT SPECIFIED	NOT SPECIFIED		3 mm
M24C08-WMB3TP/W	STMicroelectronics	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	1024 words	5	3/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20		EEPROMs	40	.5 mm	125 Cel	1KX8	1K	-40 Cel		1010DMMR	DUAL	HARDWARE	R-XDSO-N8		5.5 V	.6 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	8192 bit	2.5 V		NOT SPECIFIED	NOT SPECIFIED	.000002 Amp	3 mm
M95256-DWMC4TP	STMicroelectronics	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS		32768 words			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.5 mm	145 Cel	32KX8	32K	-40 Cel			DUAL		R-PDSO-N8		5.5 V	.6 mm		10 MHz	2 mm		4 ms	SPI	262144 bit	2.5 V					3 mm
M95010-WMC3G/S	STMicroelectronics	EEPROM	AUTOMOTIVE		HVSON				1	CMOS			SERIAL	SYNCHRONOUS		1024 words			1						.5 mm	125 Cel	1KX1	1K	-40 Cel							5.5 V	.6 mm		5 MHz	2 mm		5 ms	SPI	1024 bit	2.5 V		NOT SPECIFIED	NOT SPECIFIED		3 mm
M24256-BWMC6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	2.5 mA	32768 words		3/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20		EEPROMs	200	.5 mm	85 Cel	32KX8	32K	-40 Cel		1010DDDR	DUAL	HARDWARE	R-PDSO-N8		5.5 V	.6 mm	4000000 Write/Erase Cycles	1 MHz	2 mm	Not Qualified	5 ms	I2C	262144 bit	2.5 V				.000002 Amp	3 mm
M95640-WMC6P/P	STMicroelectronics	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		8192 words	5		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.5 mm	85 Cel	8KX8	8K	-40 Cel			DUAL		R-PDSO-N8		5.5 V	.6 mm		10 MHz	2 mm		5 ms	SPI	65536 bit	2.5 V					3 mm
M95080-DFMC6TG/S	STMicroelectronics	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		1024 words	1.8		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.5 mm	85 Cel	1KX8	1K	-40 Cel			DUAL		R-PDSO-N8		5.5 V	.6 mm		5 MHz	2 mm		5 ms	SPI	8192 bit	1.7 V					3 mm
M95040-WMC6TG	STMicroelectronics	EEPROM	INDUSTRIAL		HVSON				1	CMOS			SERIAL	SYNCHRONOUS		4096 words			1						.5 mm	85 Cel	4KX1	4K	-40 Cel							5.5 V	.6 mm		10 MHz	2 mm		5 ms	SPI	4096 bit	2.5 V		NOT SPECIFIED	NOT SPECIFIED		3 mm
M95320-WMB4TG/K	STMicroelectronics	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		4096 words	5		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.5 mm	145 Cel	4KX8	4K	-40 Cel			DUAL		R-PDSO-N8		5.5 V	.6 mm		10 MHz	2 mm		4 ms	SPI	32768 bit	2.5 V		NOT SPECIFIED	NOT SPECIFIED		3 mm
M95M01-DWMC3TG/K	STMicroelectronics	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS		131072 words			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.5 mm	125 Cel	128KX8	128K	-40 Cel			DUAL		R-PDSO-N8		5.5 V	.6 mm		10 MHz	2 mm		4 ms	SPI	1048576 bit	2.5 V					3 mm
M95320-WMB6G/K	STMicroelectronics	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		4096 words	5		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.5 mm	85 Cel	4KX8	4K	-40 Cel			DUAL		R-PDSO-N8		5.5 V	.6 mm		10 MHz	2 mm		5 ms	SPI	32768 bit	2.5 V					3 mm
M93C76-WMC6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		512 words	5		16	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		8			.5 mm	85 Cel	512X16	512	-40 Cel			DUAL		R-PDSO-N8		5.5 V	.6 mm		2 MHz	2 mm		5 ms	MICROWIRE	8192 bit	2.5 V					3 mm
M24C01-RMC6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	.8 mA	128 words	2.5	2/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20		EEPROMs	40	.5 mm	85 Cel	128X8	128	-40 Cel		1010DDDR	DUAL	HARDWARE	R-PDSO-N8		5.5 V	.6 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	1024 bit	1.8 V		NOT SPECIFIED	NOT SPECIFIED	.000001 Amp	3 mm
M95160-DRMC4TG/K	STMicroelectronics	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS		2048 words			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.5 mm	145 Cel	2KX8	2K	-40 Cel			DUAL		R-PDSO-N8		5.5 V	.6 mm			2 mm		4 ms	SPI	16384 bit	1.8 V					3 mm
M95080-DWMF4G/K	STMicroelectronics	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS		1024 words			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.5 mm	145 Cel	1KX8	1K	-40 Cel			DUAL		R-PDSO-N8		5.5 V	.8 mm		10 MHz	2 mm		4 ms	SPI	8192 bit	2.5 V					3 mm
M95256-DRMC4TP	STMicroelectronics	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS		32768 words			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.5 mm	145 Cel	32KX8	32K	-40 Cel			DUAL		R-PDSO-N8		5.5 V	.6 mm			2 mm		4 ms	SPI	262144 bit	1.8 V					3 mm
M95320-DRMF8TP/K	STMicroelectronics	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	5 mA	4096 words	2.5	2/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20		EEPROMs	50	.5 mm	105 Cel	4KX8	4K	-40 Cel			DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		5.5 V	.8 mm	900000 Write/Erase Cycles	10 MHz	2 mm	Not Qualified	4 ms	SPI	32768 bit	1.8 V				.000001 Amp	3 mm
M93C46-MB3T	STMicroelectronics	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	1.5 mA	64 words	5	5	16	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20	8	EEPROMs	40	.5 mm	125 Cel	64X16	64	-40 Cel	TIN LEAD		DUAL	SOFTWARE	R-XDSO-N8		5.5 V	.6 mm	1000000 Write/Erase Cycles	2 MHz	2 mm	Not Qualified	10 ms	MICROWIRE	1024 bit	4.5 V	e0			.00005 Amp	3 mm
M95640-WMB4TP/K	STMicroelectronics	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		8192 words	5		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.5 mm	145 Cel	8KX8	8K	-40 Cel			DUAL		R-PDSO-N8		5.5 V	.6 mm		10 MHz	2 mm		4 ms	SPI	65536 bit	2.5 V		NOT SPECIFIED	NOT SPECIFIED		3 mm
M95160-RMB6P/S	STMicroelectronics	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		2048 words	5		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.5 mm	85 Cel	2KX8	2K	-40 Cel			DUAL		R-PDSO-N8		5.5 V	.6 mm		5 MHz	2 mm	Not Qualified	5 ms	SPI	16384 bit	1.8 V		NOT SPECIFIED	NOT SPECIFIED		3 mm
M95080-RMB6G/G	STMicroelectronics	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		1024 words	5		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.5 mm	85 Cel	1KX8	1K	-40 Cel			DUAL		R-PDSO-N8		5.5 V	.6 mm		10 MHz	2 mm	Not Qualified	5 ms	SPI	8192 bit	1.8 V		NOT SPECIFIED	NOT SPECIFIED		3 mm
M24128-BFMC6P	STMicroelectronics	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	2.5 mA	16384 words		1.8/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20		EEPROMs	200	.5 mm	85 Cel	16KX8	16K	-40 Cel		1010DDDR	DUAL	HARDWARE	R-PDSO-N8		5.5 V	.6 mm	4000000 Write/Erase Cycles	1 MHz	2 mm	Not Qualified	5 ms	I2C	131072 bit	1.7 V		NOT SPECIFIED	NOT SPECIFIED	.000001 Amp	3 mm
M95160-MB6TP/G	STMicroelectronics	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		2048 words	5		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.5 mm	85 Cel	2KX8	2K	-40 Cel			DUAL		R-PDSO-N8		5.5 V	.6 mm		10 MHz	2 mm		5 ms	SPI	16384 bit	4.5 V		NOT SPECIFIED	NOT SPECIFIED		3 mm
M24C04-WMB3G/W	STMicroelectronics	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	512 words	5	3/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20		EEPROMs	40	.5 mm	125 Cel	512X8	512	-40 Cel		1010DDMR	DUAL	HARDWARE	R-XDSO-N8		5.5 V	.6 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	4096 bit	2.5 V		NOT SPECIFIED	NOT SPECIFIED	.000002 Amp	3 mm
M93C56-RMF3TP/K	STMicroelectronics	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS		128 words	2.5		16	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		8			.5 mm	125 Cel	128X16	128	-40 Cel			DUAL		R-PDSO-N8		5.5 V	.8 mm		2 MHz	2 mm		4 ms	MICROWIRE	2048 bit	1.8 V		NOT SPECIFIED	NOT SPECIFIED		3 mm
M24C32-DRMC6TG	STMicroelectronics	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	5 mA	4096 words	5		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.5 mm	85 Cel	4KX8	4K	-40 Cel			DUAL		R-PDSO-N8		5.5 V	.6 mm		1 MHz	2 mm		5 ms	I2C	32768 bit	1.8 V					3 mm
M24C32-FMC6P	STMicroelectronics	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	5 mA	4096 words		1.8/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20		EEPROMs	40	.5 mm	85 Cel	4KX8	4K	-40 Cel	MATTE TIN	1010DDDR	DUAL	HARDWARE	R-PDSO-N8	1	5.5 V	.6 mm	1000000 Write/Erase Cycles	1 MHz	2 mm	Not Qualified	5 ms	I2C	32768 bit	1.7 V	e3			.000001 Amp	3 mm
M24C64-FMC6G	STMicroelectronics	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	3 mA	8192 words		1.8/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20		EEPROMs	40	.5 mm	85 Cel	8KX8	8K	-40 Cel		1010DDDR	DUAL	HARDWARE	R-PDSO-N8		5.5 V	.6 mm	1000000 Write/Erase Cycles	1 MHz	2 mm	Not Qualified	5 ms	I2C	65536 bit	1.7 V		NOT SPECIFIED	NOT SPECIFIED	.000001 Amp	3 mm
M95020-WMC3P/S	STMicroelectronics	EEPROM	AUTOMOTIVE		HVSON				1	CMOS			SERIAL	SYNCHRONOUS		2048 words			1						.5 mm	125 Cel	2KX1	2K	-40 Cel							5.5 V	.6 mm		5 MHz	2 mm		5 ms	SPI	2048 bit	2.5 V		NOT SPECIFIED	NOT SPECIFIED		3 mm

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.