HVSSON EEPROM 34

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	I2C Control Byte	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length
AT24C64AY6-10YH-1.8	Atmel	EEPROM	INDUSTRIAL	8	HVSSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		8192 words	2.5		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE, SHRINK PITCH				.5 mm	85 Cel	8KX8	8K	-40 Cel	NICKEL PALLADIUM GOLD		DUAL		R-XDSO-N8		5.5 V	.6 mm		.4 MHz	2 mm	Not Qualified	20 ms	I2C	65536 bit	1.8 V	e4				3 mm
CAT24C04VP2I	Onsemi	EEPROM	INDUSTRIAL	8	HVSSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	2 mA	512 words	5	2/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE, SHRINK PITCH	SOLCC8,.11,20	EEPROMs	100	.5 mm	85 Cel	512X8	512	-40 Cel	MATTE TIN	1010DDMR	DUAL	HARDWARE	R-XDSO-N8	1	5.5 V	.8 mm	1000000 Write/Erase Cycles	.1 MHz	2 mm	Not Qualified	5 ms	I2C	4096 bit	1.8 V	e3			.000001 Amp	3 mm
CAT24C32ZD2I-GT3	Onsemi	EEPROM	INDUSTRIAL	8	HVSSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	2 mA	4096 words	5	2/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE, SHRINK PITCH	SOLCC8,.2,25	EEPROMs	100	.5 mm	85 Cel	4KX8	4K	-40 Cel	NICKEL PALLADIUM GOLD	1010DDDR	DUAL	HARDWARE	R-XDSO-N8		5.5 V	.8 mm	1000000 Write/Erase Cycles	.1 MHz	2 mm	Not Qualified	5 ms	I2C	32768 bit	1.8 V	e4			.000001 Amp	3 mm
CAT24C16VP2IG	Onsemi	EEPROM	INDUSTRIAL	8	HVSSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	2 mA	2048 words	5	2/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE, SHRINK PITCH	SOLCC8,.11,20	EEPROMs	100	.5 mm	85 Cel	2KX8	2K	-40 Cel	NICKEL PALLADIUM GOLD	1010MMMR	DUAL	HARDWARE	R-PDSO-N8	1	5.5 V	.8 mm	1000000 Write/Erase Cycles	.1 MHz	2 mm	Not Qualified	5 ms	I2C	16384 bit	1.8 V	e4			.000001 Amp	3 mm
M34C02-LMB1	STMicroelectronics	EEPROM	COMMERCIAL	8	HVSSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		256 words	2.5		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE, SHRINK PITCH				.5 mm	70 Cel	256X8	256	0 Cel	TIN LEAD		DUAL		R-XDSO-N8		5.5 V	.6 mm		.4 MHz	2 mm	Not Qualified	10 ms	I2C	2048 bit	2.2 V	e0				3 mm
M34C02-FMB1TP	STMicroelectronics	EEPROM	COMMERCIAL	8	HVSSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	1 mA	256 words	2.5	1.8/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE, SHRINK PITCH	SOLCC8,.11,20	EEPROMs	40	.5 mm	70 Cel	256X8	256	0 Cel		1010DDDR	DUAL	HARDWARE/SOFTWARE	R-XDSO-N8		3.6 V	.6 mm	1000000 Write/Erase Cycles	.1 MHz	2 mm	Not Qualified	10 ms	I2C	2048 bit	1.7 V		NOT SPECIFIED	NOT SPECIFIED	.0000005 Amp	3 mm
M34E02-FMB1TG	STMicroelectronics	EEPROM	COMMERCIAL	8	HVSSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	2 mA	256 words	2.5	1.8/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE, SHRINK PITCH	SOLCC8,.11,20	EEPROMs	40	.5 mm	70 Cel	256X8	256	0 Cel	NICKEL PALLADIUM GOLD	1010DDDR	DUAL	HARDWARE/SOFTWARE	R-XDSO-N8	1	3.6 V	.6 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	10 ms	I2C	2048 bit	1.7 V	e4			.000001 Amp	3 mm
M34C02-LMB6	STMicroelectronics	EEPROM	INDUSTRIAL	8	HVSSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	2 mA	256 words	2.5	2.5/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE, SHRINK PITCH	SOLCC8,.11,20	EEPROMs	40	.5 mm	85 Cel	256X8	256	-40 Cel	TIN LEAD	1010DDDR	DUAL	HARDWARE/SOFTWARE	R-XDSO-N8		5.5 V	.6 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	10 ms	I2C	2048 bit	2.2 V	e0			.0000005 Amp	3 mm
M34E02-FMB1P	STMicroelectronics	EEPROM	COMMERCIAL	8	HVSSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	2 mA	256 words	2.5	1.8/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE, SHRINK PITCH	SOLCC8,.11,20	EEPROMs	40	.5 mm	70 Cel	256X8	256	0 Cel		1010DDDR	DUAL	HARDWARE/SOFTWARE	R-XDSO-N8		3.6 V	.6 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	10 ms	I2C	2048 bit	1.7 V		NOT SPECIFIED	NOT SPECIFIED	.000001 Amp	3 mm
M34C02-FMB6	STMicroelectronics	EEPROM	INDUSTRIAL	8	HVSSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		256 words	2.5		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE, SHRINK PITCH				.5 mm	85 Cel	256X8	256	-40 Cel	TIN LEAD		DUAL		R-XDSO-N8		3.6 V	.6 mm		.1 MHz	2 mm	Not Qualified	10 ms	I2C	2048 bit	1.7 V	e0				3 mm
M34E02-FMB1G	STMicroelectronics	EEPROM	COMMERCIAL	8	HVSSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	2 mA	256 words	2.5	1.8/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE, SHRINK PITCH	SOLCC8,.11,20	EEPROMs	40	.5 mm	70 Cel	256X8	256	0 Cel		1010DDDR	DUAL	HARDWARE/SOFTWARE	R-XDSO-N8		3.6 V	.6 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	10 ms	I2C	2048 bit	1.7 V		NOT SPECIFIED	NOT SPECIFIED	.000001 Amp	3 mm
M34C02-FMB1TG	STMicroelectronics	EEPROM	COMMERCIAL	8	HVSSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	1 mA	256 words	2.5	1.8/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE, SHRINK PITCH	SOLCC8,.11,20	EEPROMs	40	.5 mm	70 Cel	256X8	256	0 Cel		1010DDDR	DUAL	HARDWARE/SOFTWARE	R-XDSO-N8		3.6 V	.6 mm	1000000 Write/Erase Cycles	.1 MHz	2 mm	Not Qualified	10 ms	I2C	2048 bit	1.7 V		NOT SPECIFIED	NOT SPECIFIED	.0000005 Amp	3 mm
M34C02-FMB6P	STMicroelectronics	EEPROM	INDUSTRIAL	8	HVSSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		256 words	2.5		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE, SHRINK PITCH				.5 mm	85 Cel	256X8	256	-40 Cel			DUAL		R-XDSO-N8		3.6 V	.6 mm		.1 MHz	2 mm	Not Qualified	10 ms	I2C	2048 bit	1.7 V		NOT SPECIFIED	NOT SPECIFIED		3 mm
M34C02-FMB6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	HVSSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		256 words	2.5		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE, SHRINK PITCH				.5 mm	85 Cel	256X8	256	-40 Cel			DUAL		R-XDSO-N8		3.6 V	.6 mm		.1 MHz	2 mm	Not Qualified	10 ms	I2C	2048 bit	1.7 V		NOT SPECIFIED	NOT SPECIFIED		3 mm
M34E02-FMB1T	STMicroelectronics	EEPROM	COMMERCIAL	8	HVSSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	1 mA	256 words	2.5	1.8/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE, SHRINK PITCH	SOLCC8,.11,20	EEPROMs	40	.5 mm	70 Cel	256X8	256	0 Cel	TIN LEAD	1010DDDR	DUAL	HARDWARE/SOFTWARE	R-XDSO-N8		3.6 V	.6 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	10 ms	I2C	2048 bit	1.7 V	e0			.0000005 Amp	3 mm
M34C02-RMB6T	STMicroelectronics	EEPROM	INDUSTRIAL	8	HVSSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	1 mA	256 words	5	2/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE, SHRINK PITCH	SOLCC8,.11,20	EEPROMs	40	.5 mm	85 Cel	256X8	256	-40 Cel	TIN LEAD	1010DDDR	DUAL	HARDWARE/SOFTWARE	R-XDSO-N8		5.5 V	.6 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	10 ms	I2C	2048 bit	1.8 V	e0			.0000005 Amp	3 mm
M34C02-WMB6T	STMicroelectronics	EEPROM	INDUSTRIAL	8	HVSSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	2 mA	256 words	5	3/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE, SHRINK PITCH	SOLCC8,.11,20	EEPROMs	40	.5 mm	85 Cel	256X8	256	-40 Cel	TIN LEAD	1010DDDR	DUAL	HARDWARE/SOFTWARE	R-XDSO-N8		5.5 V	.6 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	10 ms	I2C	2048 bit	2.5 V	e0			.0000005 Amp	3 mm
M34C02-FMB6TG	STMicroelectronics	EEPROM	INDUSTRIAL	8	HVSSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		256 words	2.5		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE, SHRINK PITCH				.5 mm	85 Cel	256X8	256	-40 Cel			DUAL		R-XDSO-N8		3.6 V	.6 mm		.1 MHz	2 mm	Not Qualified	10 ms	I2C	2048 bit	1.7 V		NOT SPECIFIED	NOT SPECIFIED		3 mm
M34C02-FMB1T	STMicroelectronics	EEPROM	COMMERCIAL	8	HVSSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	1 mA	256 words	2.5	1.8/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE, SHRINK PITCH	SOLCC8,.11,20	EEPROMs	40	.5 mm	70 Cel	256X8	256	0 Cel	TIN LEAD	1010DDDR	DUAL	HARDWARE/SOFTWARE	R-XDSO-N8		3.6 V	.6 mm	1000000 Write/Erase Cycles	.1 MHz	2 mm	Not Qualified	10 ms	I2C	2048 bit	1.7 V	e0			.0000005 Amp	3 mm
M34E02-FMB1	STMicroelectronics	EEPROM	COMMERCIAL	8	HVSSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	1 mA	256 words	2.5	1.8/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE, SHRINK PITCH	SOLCC8,.11,20	EEPROMs	40	.5 mm	70 Cel	256X8	256	0 Cel	TIN LEAD	1010DDDR	DUAL	HARDWARE/SOFTWARE	R-XDSO-N8		3.6 V	.6 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	10 ms	I2C	2048 bit	1.7 V	e0			.0000005 Amp	3 mm
M34C02-RMB6	STMicroelectronics	EEPROM	INDUSTRIAL	8	HVSSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	1 mA	256 words	5	2/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE, SHRINK PITCH	SOLCC8,.11,20	EEPROMs	40	.5 mm	85 Cel	256X8	256	-40 Cel	TIN LEAD	1010DDDR	DUAL	HARDWARE/SOFTWARE	R-XDSO-N8		5.5 V	.6 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	10 ms	I2C	2048 bit	1.8 V	e0			.0000005 Amp	3 mm
M34C02-RMB1	STMicroelectronics	EEPROM	COMMERCIAL	8	HVSSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		256 words	5		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE, SHRINK PITCH				.5 mm	70 Cel	256X8	256	0 Cel	TIN LEAD		DUAL		R-XDSO-N8		5.5 V	.6 mm		.4 MHz	2 mm	Not Qualified	10 ms	I2C	2048 bit	1.8 V	e0				3 mm
M34C02-FMB6G	STMicroelectronics	EEPROM	INDUSTRIAL	8	HVSSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		256 words	2.5		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE, SHRINK PITCH				.5 mm	85 Cel	256X8	256	-40 Cel			DUAL		R-XDSO-N8		3.6 V	.6 mm		.1 MHz	2 mm	Not Qualified	10 ms	I2C	2048 bit	1.7 V		NOT SPECIFIED	NOT SPECIFIED		3 mm
M34C02-FMB1	STMicroelectronics	EEPROM	COMMERCIAL	8	HVSSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	1 mA	256 words	2.5	1.8/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE, SHRINK PITCH	SOLCC8,.11,20	EEPROMs	40	.5 mm	70 Cel	256X8	256	0 Cel	TIN LEAD	1010DDDR	DUAL	HARDWARE/SOFTWARE	R-XDSO-N8		3.6 V	.6 mm	1000000 Write/Erase Cycles	.1 MHz	2 mm	Not Qualified	10 ms	I2C	2048 bit	1.7 V	e0			.0000005 Amp	3 mm
M34C02-WMB6	STMicroelectronics	EEPROM	INDUSTRIAL	8	HVSSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	2 mA	256 words	5	3/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE, SHRINK PITCH	SOLCC8,.11,20	EEPROMs	40	.5 mm	85 Cel	256X8	256	-40 Cel	TIN LEAD	1010DDDR	DUAL	HARDWARE/SOFTWARE	R-XDSO-N8		5.5 V	.6 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	10 ms	I2C	2048 bit	2.5 V	e0			.0000005 Amp	3 mm
M34C02-RMB1T	STMicroelectronics	EEPROM	COMMERCIAL	8	HVSSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		256 words	5		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE, SHRINK PITCH				.5 mm	70 Cel	256X8	256	0 Cel	TIN LEAD		DUAL		R-XDSO-N8		5.5 V	.6 mm		.4 MHz	2 mm	Not Qualified	10 ms	I2C	2048 bit	1.8 V	e0				3 mm
M34C02-FMB6T	STMicroelectronics	EEPROM	INDUSTRIAL	8	HVSSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		256 words	2.5		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE, SHRINK PITCH				.5 mm	85 Cel	256X8	256	-40 Cel	TIN LEAD		DUAL		R-XDSO-N8		3.6 V	.6 mm		.1 MHz	2 mm	Not Qualified	10 ms	I2C	2048 bit	1.7 V	e0				3 mm
M34E02-FMB1TP	STMicroelectronics	EEPROM	COMMERCIAL	8	HVSSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	2 mA	256 words	2.5	1.8/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE, SHRINK PITCH	SOLCC8,.11,20	EEPROMs	40	.5 mm	70 Cel	256X8	256	0 Cel		1010DDDR	DUAL	HARDWARE/SOFTWARE	R-XDSO-N8		3.6 V	.6 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	10 ms	I2C	2048 bit	1.7 V		NOT SPECIFIED	NOT SPECIFIED	.000001 Amp	3 mm
M34C02-FMB1G	STMicroelectronics	EEPROM	COMMERCIAL	8	HVSSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	1 mA	256 words	2.5	1.8/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE, SHRINK PITCH	SOLCC8,.11,20	EEPROMs	40	.5 mm	70 Cel	256X8	256	0 Cel		1010DDDR	DUAL	HARDWARE/SOFTWARE	R-XDSO-N8		3.6 V	.6 mm	1000000 Write/Erase Cycles	.1 MHz	2 mm	Not Qualified	10 ms	I2C	2048 bit	1.7 V		NOT SPECIFIED	NOT SPECIFIED	.0000005 Amp	3 mm
M34C02-LMB6T	STMicroelectronics	EEPROM	INDUSTRIAL	8	HVSSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	2 mA	256 words	2.5	2.5/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE, SHRINK PITCH	SOLCC8,.11,20	EEPROMs	40	.5 mm	85 Cel	256X8	256	-40 Cel	TIN LEAD	1010DDDR	DUAL	HARDWARE/SOFTWARE	R-XDSO-N8		5.5 V	.6 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	10 ms	I2C	2048 bit	2.2 V	e0			.0000005 Amp	3 mm
M34C02-WMB1T	STMicroelectronics	EEPROM	COMMERCIAL	8	HVSSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		256 words	5		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE, SHRINK PITCH				.5 mm	70 Cel	256X8	256	0 Cel	TIN LEAD		DUAL		R-XDSO-N8		5.5 V	.6 mm		.4 MHz	2 mm	Not Qualified	10 ms	I2C	2048 bit	2.5 V	e0				3 mm
M34C02-WMB1	STMicroelectronics	EEPROM	COMMERCIAL	8	HVSSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		256 words	5		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE, SHRINK PITCH				.5 mm	70 Cel	256X8	256	0 Cel	TIN LEAD		DUAL		R-XDSO-N8		5.5 V	.6 mm		.4 MHz	2 mm	Not Qualified	10 ms	I2C	2048 bit	2.5 V	e0				3 mm
M34C02-LMB1T	STMicroelectronics	EEPROM	COMMERCIAL	8	HVSSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		256 words	2.5		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE, SHRINK PITCH				.5 mm	70 Cel	256X8	256	0 Cel	TIN LEAD		DUAL		R-XDSO-N8		5.5 V	.6 mm		.4 MHz	2 mm	Not Qualified	10 ms	I2C	2048 bit	2.2 V	e0				3 mm
M34C02-FMB1P	STMicroelectronics	EEPROM	COMMERCIAL	8	HVSSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	1 mA	256 words	2.5	1.8/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE, SHRINK PITCH	SOLCC8,.11,20	EEPROMs	40	.5 mm	70 Cel	256X8	256	0 Cel		1010DDDR	DUAL	HARDWARE/SOFTWARE	R-XDSO-N8		3.6 V	.6 mm	1000000 Write/Erase Cycles	.1 MHz	2 mm	Not Qualified	10 ms	I2C	2048 bit	1.7 V		NOT SPECIFIED	NOT SPECIFIED	.0000005 Amp	3 mm

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.