LQFP EEPROM 10

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Peak Reflow Temperature (C)	Length
EPC1064TC32	Altera	CONFIGURATION MEMORY	COMMERCIAL	32	LQFP	SQUARE	PLASTIC/EPOXY	YES	1	MOS	GULL WING	SERIAL	SYNCHRONOUS	65536 words	COMMON	5	5	1	FLATPACK, LOW PROFILE	TQFP32,.35SQ,32	OTP ROMs	.8 mm	70 Cel	3-STATE	64KX1	64K	0 Cel	TIN LEAD	QUAD	S-PQFP-G32	3	5.25 V	1.27 mm	4 MHz	7 mm	Not Qualified	65536 bit	4.75 V	4 WIRE INTERFACE TO FLEX 8000 DEVICES	e0	220	7 mm
EPC1064TI32	Altera	CONFIGURATION MEMORY	INDUSTRIAL	32	LQFP	SQUARE	PLASTIC/EPOXY	YES	1	MOS	GULL WING		SYNCHRONOUS	65536 words	COMMON	5	5	1	FLATPACK, LOW PROFILE	TQFP32,.35SQ,32	OTP ROMs	.8 mm	85 Cel	3-STATE	64KX1	64K	-40 Cel	TIN LEAD	QUAD	S-PQFP-G32	3	5.5 V	1.27 mm	6 MHz	7 mm	Not Qualified	65536 bit	4.5 V	4 WIRE INTERFACE TO FLEX 8000 DEVICES	e0	220	7 mm
EPC1064VTI	Altera	CONFIGURATION MEMORY	INDUSTRIAL	32	LQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	65536 words		3.3		1	FLATPACK, LOW PROFILE			.8 mm	85 Cel	3-STATE	64KX1	64K	-40 Cel	TIN LEAD	QUAD	S-PQFP-G32		3.6 V	1.27 mm		7 mm	Not Qualified	65536 bit	3 V	4 WIRE INTERFACE TO FLEX 8000 DEVICES	e0		7 mm
EPC1064TM	Altera	CONFIGURATION MEMORY	MILITARY	32	LQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	65536 words		5		1	FLATPACK, LOW PROFILE			.8 mm	125 Cel	3-STATE	64KX1	64K	-55 Cel	MATTE TIN	QUAD	S-PQFP-G32		5.25 V	1.27 mm		7 mm	Not Qualified	65536 bit	4.75 V	4 WIRE INTERFACE TO FLEX 8000 DEVICES	e3		7 mm
EPC1064VTM	Altera	CONFIGURATION MEMORY	MILITARY	32	LQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	65536 words		3.3		1	FLATPACK, LOW PROFILE			.8 mm	125 Cel	3-STATE	64KX1	64K	-55 Cel	MATTE TIN	QUAD	S-PQFP-G32		3.6 V	1.27 mm		7 mm	Not Qualified	65536 bit	3 V	4 WIRE INTERFACE TO FLEX 8000 DEVICES	e3		7 mm
EPC1064VTC	Altera	CONFIGURATION MEMORY	COMMERCIAL	32	LQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	65536 words		3.3		1	FLATPACK, LOW PROFILE			.8 mm	70 Cel	3-STATE	64KX1	64K	0 Cel	TIN LEAD	QUAD	S-PQFP-G32		3.6 V	1.27 mm		7 mm	Not Qualified	65536 bit	3 V	4 WIRE INTERFACE TO FLEX 8000 DEVICES	e0		7 mm
EPC1064VTC32	Altera	CONFIGURATION MEMORY	COMMERCIAL	32	LQFP	SQUARE	PLASTIC/EPOXY	YES	1	MOS	GULL WING		SYNCHRONOUS	65536 words	COMMON	3.3	3.3	1	FLATPACK, LOW PROFILE	TQFP32,.35SQ,32	OTP ROMs	.8 mm	70 Cel	3-STATE	64KX1	64K	0 Cel	TIN LEAD	QUAD	S-PQFP-G32	3	3.6 V	1.27 mm	4 MHz	7 mm	Not Qualified	65536 bit	3 V	4 WIRE INTERFACE TO FLEX 8000 DEVICES	e0	220	7 mm
EPC1064TC	Altera	CONFIGURATION MEMORY	COMMERCIAL	32	LQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	65536 words		5		1	FLATPACK, LOW PROFILE			.8 mm	70 Cel	3-STATE	64KX1	64K	0 Cel	TIN LEAD	QUAD	S-PQFP-G32		5.25 V	1.27 mm		7 mm	Not Qualified	65536 bit	4.75 V	4 WIRE INTERFACE TO FLEX 8000 DEVICES	e0		7 mm
EPC1064TI	Altera	CONFIGURATION MEMORY	INDUSTRIAL	32	LQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	65536 words		5		1	FLATPACK, LOW PROFILE			.8 mm	85 Cel	3-STATE	64KX1	64K	-40 Cel	TIN LEAD	QUAD	S-PQFP-G32		5.25 V	1.27 mm		7 mm	Not Qualified	65536 bit	4.75 V	4 WIRE INTERFACE TO FLEX 8000 DEVICES	e0		7 mm
EPC1064VTI32	Altera	CONFIGURATION MEMORY	INDUSTRIAL	32	LQFP	SQUARE	PLASTIC/EPOXY	YES	1	MOS	GULL WING		SYNCHRONOUS	65536 words	COMMON	3.3	3.3	1	FLATPACK, LOW PROFILE	TQFP32,.35SQ,32	OTP ROMs	.8 mm	85 Cel	3-STATE	64KX1	64K	-40 Cel	TIN LEAD	QUAD	S-PQFP-G32	3	3.6 V	1.27 mm	4 MHz	7 mm	Not Qualified	65536 bit	3 V	4 WIRE INTERFACE TO FLEX 8000 DEVICES	e0	220	7 mm

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.