LSSOP EEPROM 227

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	I2C Control Byte	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
M28LV64-300N6	STMicroelectronics	EEPROM	INDUSTRIAL	28	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	10 mA	8192 words		YES	3/3.3	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSSOP28,.53,22	EEPROMs	40	.55 mm	85 Cel		8KX8	8K	-40 Cel	NO	TIN LEAD		YES	DUAL		R-PDSO-G28	3.6 V	1.25 mm	100000 Write/Erase Cycles		8 mm	Not Qualified			65536 bit	2.7 V	ENDURANCE >100000 ERASE/WRITE CYCLES; DATA RETENTION >40 YEARS; SOFTWARE DATA PROTECTION	64	e0	.00002 Amp	11.8 mm	300 ns	3	YES
M28LV16-200N1	STMicroelectronics	EEPROM	COMMERCIAL	28	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	10 mA	2048 words	3.3	YES	3/3.3	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSSOP28,.53,22	EEPROMs		.55 mm	70 Cel	3-STATE	2KX8	2K	0 Cel	NO	TIN LEAD		YES	DUAL		R-PDSO-G28	3.6 V	1.25 mm			8 mm	Not Qualified			16384 bit	2.7 V		64	e0	.00005 Amp	11.8 mm	200 ns	3	YES
M34C00-WPB6T	STMicroelectronics	EEPROM	INDUSTRIAL	5	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		48 words	3.3			8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH				.95 mm	85 Cel		48X8	48	-40 Cel					DUAL		R-PDSO-G5	5.5 V	1.45 mm		.4 MHz	1.6 mm	Not Qualified	10 ms	I2C	384 bit	2.5 V					2.9 mm
M28LV16-200N1T	STMicroelectronics	EEPROM	COMMERCIAL	28	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		2048 words	3.3			8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH				.55 mm	70 Cel	3-STATE	2KX8	2K	0 Cel					DUAL		R-PDSO-G28	3.6 V	1.25 mm			8 mm	Not Qualified			16384 bit	2.7 V					11.8 mm	200 ns	3
M28256-25WNS3T	STMicroelectronics	EEPROM	AUTOMOTIVE	28	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words	3.3			8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH				.55 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel					DUAL		R-PDSO-G28	3.6 V	1.25 mm			8 mm	Not Qualified			262144 bit	2.7 V					11.8 mm	250 ns	3
M28C16A-20NS6	STMicroelectronics	EEPROM	INDUSTRIAL	28	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	2048 words	5	YES	5	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSSOP28,.53,22	EEPROMs	40	.55 mm	85 Cel		2KX8	2K	-40 Cel	NO	TIN LEAD		YES	DUAL		R-PDSO-G28	5.5 V	1.25 mm	100000 Write/Erase Cycles		8 mm	Not Qualified			16384 bit	4.5 V	ENDURANCE >100000 WRITE/ERASE CYCLES; DATA RETENTION > 40 YEARS; 32 BYTE PAGE WRITE	32	e0	.00005 Amp	11.8 mm	200 ns	5	YES
M28C16-120N1	STMicroelectronics	EEPROM	COMMERCIAL	28	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	2048 words	5	YES	5	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSSOP28,.53,22	EEPROMs		.55 mm	70 Cel	3-STATE	2KX8	2K	0 Cel	NO	TIN LEAD		YES	DUAL		R-PDSO-G28	5.5 V	1.25 mm			8 mm	Not Qualified			16384 bit	4.5 V		64	e0	.0001 Amp	11.8 mm	120 ns	5	YES
M28C16-25WNS6T	STMicroelectronics	EEPROM	INDUSTRIAL	28	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		2048 words	3			8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH			40	.55 mm	85 Cel		2KX8	2K	-40 Cel					DUAL		R-PDSO-G28	3.6 V	1.25 mm	100000 Write/Erase Cycles		8 mm	Not Qualified			16384 bit	2.7 V	ENDURANCE >100000 WRITE/ERASE CYCLES; DATA RETENTION > 40 YEARS; 32 BYTE PAGE WRITE				11.8 mm	250 ns	3
M28C64C-250N6	STMicroelectronics	EEPROM	INDUSTRIAL	28	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	8192 words	5	YES	5	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSSOP28,.53,22	EEPROMs	40	.55 mm	85 Cel		8KX8	8K	-40 Cel	NO	TIN LEAD		YES	DUAL		R-PDSO-G28	5.5 V	1.25 mm	100000 Write/Erase Cycles		8 mm	Not Qualified	5 ms		65536 bit	4.5 V	32 BYTE PAGE WRITE; 100000 ERASE/WRITE CYCLES; DATA RETENTION > 40 YEARS	32	e0	.0001 Amp	11.8 mm	250 ns	5	YES
M28C64-90WNS6T	STMicroelectronics	EEPROM	INDUSTRIAL	28	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	10 mA	8192 words	3	YES	3/3.3	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSSOP28,.53,22	EEPROMs	40	.55 mm	85 Cel		8KX8	8K	-40 Cel	NO	TIN LEAD		YES	DUAL		R-PDSO-G28	3.6 V	1.25 mm			8 mm	Not Qualified			65536 bit	2.7 V	40 YEARS DATA RETENTION; SOFTWARE DATA PROTECTION	64	e0	.00002 Amp	11.8 mm	90 ns	3	YES
M28C64X-200N1	STMicroelectronics	EEPROM	COMMERCIAL	28	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	8192 words	5	YES	5	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSSOP28,.53,22	EEPROMs	40	.55 mm	70 Cel		8KX8	8K	0 Cel	NO	TIN LEAD			DUAL		R-PDSO-G28	5.5 V	1.25 mm	100000 Write/Erase Cycles		8 mm	Not Qualified	5 ms		65536 bit	4.5 V	32 BYTE PAGE WRITE; 100000 ERASE/WRITE CYCLES; DATA RETENTION > 40 YEARS	32	e0	.0001 Amp	11.8 mm	200 ns	5	YES
M34C00-WPB6	STMicroelectronics	EEPROM	INDUSTRIAL	5	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		48 words	3.3			8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH				.95 mm	85 Cel		48X8	48	-40 Cel					DUAL		R-PDSO-G5	5.5 V	1.45 mm		.4 MHz	1.6 mm	Not Qualified	10 ms	I2C	384 bit	2.5 V					2.9 mm
M28C16-150N6	STMicroelectronics	EEPROM	INDUSTRIAL	28	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	2048 words	5	YES	5	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSSOP28,.53,22	EEPROMs		.55 mm	85 Cel	3-STATE	2KX8	2K	-40 Cel	NO	TIN LEAD		YES	DUAL		R-PDSO-G28	5.5 V	1.25 mm			8 mm	Not Qualified			16384 bit	4.5 V		64	e0	.0001 Amp	11.8 mm	150 ns	5	YES
M28C16-150N6T	STMicroelectronics	EEPROM	INDUSTRIAL	28	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		2048 words	5			8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH				.55 mm	85 Cel	3-STATE	2KX8	2K	-40 Cel					DUAL		R-PDSO-G28	5.5 V	1.25 mm			8 mm	Not Qualified			16384 bit	4.5 V					11.8 mm	150 ns	5
M28C64C-200N1	STMicroelectronics	EEPROM	COMMERCIAL	28	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	8192 words	5	YES	5	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSSOP28,.53,22	EEPROMs	40	.55 mm	70 Cel		8KX8	8K	0 Cel	NO	TIN LEAD		YES	DUAL		R-PDSO-G28	5.5 V	1.25 mm	100000 Write/Erase Cycles		8 mm	Not Qualified	5 ms		65536 bit	4.5 V	32 BYTE PAGE WRITE; 100000 ERASE/WRITE CYCLES; DATA RETENTION > 40 YEARS	32	e0	.0001 Amp	11.8 mm	200 ns	5	YES
M28C64C-150N6TR	STMicroelectronics	EEPROM	INDUSTRIAL	28	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		8192 words	5			8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH			40	.55 mm	85 Cel		8KX8	8K	-40 Cel					DUAL		R-PDSO-G28	5.5 V	1.25 mm			8 mm	Not Qualified			65536 bit	4.5 V	32 BYTE PAGE WRITE; 100000 ERASE/WRITE CYCLES; DATA RETENTION > 40 YEARS				11.8 mm	150 ns	5
M28LV16-250N6T	STMicroelectronics	EEPROM	INDUSTRIAL	28	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		2048 words	3.3			8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH				.55 mm	85 Cel	3-STATE	2KX8	2K	-40 Cel					DUAL		R-PDSO-G28	3.6 V	1.25 mm			8 mm	Not Qualified			16384 bit	2.7 V					11.8 mm	250 ns	3
M28C64-90WNS1	STMicroelectronics	EEPROM	COMMERCIAL	28	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	10 mA	8192 words	3	YES	3/3.3	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSSOP28,.53,22	EEPROMs	40	.55 mm	70 Cel		8KX8	8K	0 Cel	NO	TIN LEAD		YES	DUAL		R-PDSO-G28	3.6 V	1.25 mm			8 mm	Not Qualified			65536 bit	2.7 V	40 YEARS DATA RETENTION; SOFTWARE DATA PROTECTION	64	e0	.00002 Amp	11.8 mm	90 ns	3	YES
M28LV64-250N6	STMicroelectronics	EEPROM	INDUSTRIAL	28	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	10 mA	8192 words		YES	3/3.3	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSSOP28,.53,22	EEPROMs	40	.55 mm	85 Cel		8KX8	8K	-40 Cel	NO	TIN LEAD		YES	DUAL		R-PDSO-G28	3.6 V	1.25 mm	100000 Write/Erase Cycles		8 mm	Not Qualified			65536 bit	2.7 V	ENDURANCE >100000 ERASE/WRITE CYCLES; DATA RETENTION >40 YEARS; SOFTWARE DATA PROTECTION	64	e0	.00002 Amp	11.8 mm	250 ns	3	YES
M28LV16-200N6T	STMicroelectronics	EEPROM	INDUSTRIAL	28	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		2048 words	3.3			8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH				.55 mm	85 Cel	3-STATE	2KX8	2K	-40 Cel					DUAL		R-PDSO-G28	3.6 V	1.25 mm			8 mm	Not Qualified			16384 bit	2.7 V					11.8 mm	200 ns	3
M28C64-90WNS1T	STMicroelectronics	EEPROM	COMMERCIAL	28	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	10 mA	8192 words	3	YES	3/3.3	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSSOP28,.53,22	EEPROMs	40	.55 mm	70 Cel		8KX8	8K	0 Cel	NO	TIN LEAD		YES	DUAL		R-PDSO-G28	3.6 V	1.25 mm			8 mm	Not Qualified			65536 bit	2.7 V	40 YEARS DATA RETENTION; SOFTWARE DATA PROTECTION	64	e0	.00002 Amp	11.8 mm	90 ns	3	YES
M28256-12NS3	STMicroelectronics	EEPROM	AUTOMOTIVE	28	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words	5			8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH				.55 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel					DUAL		R-PDSO-G28	5.5 V	1.25 mm			8 mm	Not Qualified			262144 bit	4.5 V					11.8 mm	120 ns	5
M28C16A-15NS6T	STMicroelectronics	EEPROM	INDUSTRIAL	28	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	2048 words	5	YES	5	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSSOP28,.53,22	EEPROMs	40	.55 mm	85 Cel		2KX8	2K	-40 Cel	NO	TIN LEAD		YES	DUAL		R-PDSO-G28	5.5 V	1.25 mm	100000 Write/Erase Cycles		8 mm	Not Qualified			16384 bit	4.5 V	ENDURANCE >100000 WRITE/ERASE CYCLES; DATA RETENTION > 40 YEARS; 32 BYTE PAGE WRITE	32	e0	.00005 Amp	11.8 mm	150 ns	5	YES
M28C16-30WNS6T	STMicroelectronics	EEPROM	INDUSTRIAL	28	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		2048 words	3			8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH			40	.55 mm	85 Cel		2KX8	2K	-40 Cel					DUAL		R-PDSO-G28	3.6 V	1.25 mm	100000 Write/Erase Cycles		8 mm	Not Qualified			16384 bit	2.7 V	ENDURANCE >100000 WRITE/ERASE CYCLES; DATA RETENTION > 40 YEARS; 32 BYTE PAGE WRITE				11.8 mm	300 ns	3
M28256-15NS3	STMicroelectronics	EEPROM	AUTOMOTIVE	28	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words	5			8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH				.55 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel					DUAL		R-PDSO-G28	5.5 V	1.25 mm			8 mm	Not Qualified			262144 bit	4.5 V					11.8 mm	150 ns	5
M28LV16-200N6	STMicroelectronics	EEPROM	INDUSTRIAL	28	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	10 mA	2048 words	3.3	YES	3/3.3	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSSOP28,.53,22	EEPROMs		.55 mm	85 Cel	3-STATE	2KX8	2K	-40 Cel	NO	TIN LEAD		YES	DUAL		R-PDSO-G28	3.6 V	1.25 mm			8 mm	Not Qualified			16384 bit	2.7 V		64	e0	.00005 Amp	11.8 mm	200 ns	3	YES
M28LV64-250XN1	STMicroelectronics	EEPROM	COMMERCIAL	28	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	10 mA	8192 words		YES	3/3.3	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSSOP28,.53,22	EEPROMs	40	.55 mm	70 Cel		8KX8	8K	0 Cel	NO	TIN LEAD		YES	DUAL		R-PDSO-G28	3.6 V	1.25 mm	100000 Write/Erase Cycles		8 mm	Not Qualified			65536 bit	2.7 V	ENDURANCE >100000 ERASE/WRITE CYCLES; DATA RETENTION >40 YEARS; SOFTWARE DATA PROTECTION	64	e0	.00002 Amp	11.8 mm	250 ns	3	YES
M28256-90NS3	STMicroelectronics	EEPROM	AUTOMOTIVE	28	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words	5			8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH				.55 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel					DUAL		R-PDSO-G28	5.5 V	1.25 mm			8 mm	Not Qualified			262144 bit	4.5 V					11.8 mm	90 ns	5
M28C64-90WNS6	STMicroelectronics	EEPROM	INDUSTRIAL	28	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	10 mA	8192 words	3	YES	3/3.3	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSSOP28,.53,22	EEPROMs	40	.55 mm	85 Cel		8KX8	8K	-40 Cel	NO	TIN LEAD		YES	DUAL		R-PDSO-G28	3.6 V	1.25 mm			8 mm	Not Qualified			65536 bit	2.7 V	40 YEARS DATA RETENTION; SOFTWARE DATA PROTECTION	64	e0	.00002 Amp	11.8 mm	90 ns	3	YES
TC9WMB2AFU	Toshiba	EEPROM	INDUSTRIAL	8	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	1.5 mA	256 words	2.3		2/3.3	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSSOP8,.16	EEPROMs	10	.65 mm	85 Cel		256X8	256	-40 Cel		TIN LEAD	1010DDDR		DUAL	HARDWARE	R-PDSO-G8	3.6 V	1.3 mm	100000 Write/Erase Cycles	.4 MHz	2.8 mm	Not Qualified	12 ms	I2C	2048 bit	1.8 V			e0	.000005 Amp	2.9 mm
TC9WMB4FU	Toshiba	EEPROM	INDUSTRIAL	8	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2.5 mA	512 words	2.3		2/5	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSSOP8,.16	EEPROMs	10	.65 mm	85 Cel		512X8	512	-40 Cel		TIN LEAD	1010DDMR		DUAL	HARDWARE	R-PDSO-G8	5.5 V	1.3 mm	100000 Write/Erase Cycles	.4 MHz	2.8 mm	Not Qualified	12 ms	I2C	4096 bit	1.8 V			e0		2.9 mm
TC9WMC1FU	Toshiba	EEPROM	INDUSTRIAL	8	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	1.5 mA	64 words	2.3		2/3.3	16	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSSOP8,.16	EEPROMs	10	.65 mm	85 Cel		64X16	64	-40 Cel		TIN LEAD			DUAL	SOFTWARE	R-PDSO-G8	3.6 V	1.3 mm	100000 Write/Erase Cycles	2 MHz	2.8 mm	Not Qualified		3-WIRE	1024 bit	1.8 V			e0	.000002 Amp	2.9 mm
TC9WMB1AFU	Toshiba	EEPROM	INDUSTRIAL	8	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	1.5 mA	128 words	2.3		2/3.3	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSSOP8,.16	EEPROMs	10	.65 mm	85 Cel		128X8	128	-40 Cel		TIN LEAD	1010DDDR		DUAL	HARDWARE	R-PDSO-G8	3.6 V	1.3 mm	100000 Write/Erase Cycles	.4 MHz	2.8 mm	Not Qualified	12 ms	I2C	1024 bit	1.8 V			e0	.000005 Amp	2.9 mm
TC9WMC2FU	Toshiba	EEPROM	INDUSTRIAL	8	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	1.5 mA	128 words	2.3		2/3.3	16	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSSOP8,.16	EEPROMs	10	.65 mm	85 Cel		128X16	128	-40 Cel		TIN LEAD			DUAL	SOFTWARE	R-PDSO-G8	3.6 V	1.3 mm	100000 Write/Erase Cycles	2 MHz	2.8 mm	Not Qualified		3-WIRE	2048 bit	1.8 V			e0	.000002 Amp	2.9 mm
HN58C1001T-12	Renesas Electronics	EEPROM	COMMERCIAL	32	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words	5			8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH				.5 mm	70 Cel		128KX8	128K	0 Cel		TIN LEAD			DUAL		R-PDSO-G32	5.5 V	1.27 mm			8 mm	Not Qualified			1048576 bit	4.5 V			e0		12.4 mm	120 ns	5

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.