PGA EEPROM 27

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Width	Qualification	Maximum Write Cycle Time (tWC)	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
AT28C256-15UM/883	Microchip Technology	EEPROM	MILITARY	28	PGA	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-STD-883 Class C	PIN/PEG	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	5	YES	5	8	GRID ARRAY	PGA28,5X6	EEPROMs		2.54 mm	125 Cel		3-STATE	32KX8	32K	-55 Cel	NO	TIN LEAD	PERPENDICULAR	R-CPGA-P28	5.5 V	4.4 mm	10000 Write/Erase Cycles	13.97 mm	Not Qualified	10 ms	262144 bit	4.5 V	AUTOMATIC WRITE	64	e0	.0003 Amp	16.51 mm	150 ns	5	YES
X28C512KMB-12	Renesas Electronics	EEPROM	MILITARY	36	PGA	SQUARE	CERAMIC	NO		CMOS	38535Q/M;38534H;883B	PIN/PEG	PARALLEL		50 mA	65536 words	5	YES	5	8	GRID ARRAY	PGA36,7X7	EEPROMs		2.54 mm	125 Cel			64KX8	64K	-55 Cel	NO		PERPENDICULAR	S-XPGA-P36			100000 Write/Erase Cycles		Not Qualified	10 ms	524288 bit			128		.0005 Amp		120 ns		YES
X28C512KM-12	Renesas Electronics	EEPROM		36	PGA	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	5	YES		8	GRID ARRAY	PGA36,7X7		10	2.54 mm	125 Cel		3-STATE	64KX8	64K	-55 Cel	NO		PERPENDICULAR	S-CPGA-P36	5.5 V	4.88 mm	100000 Write/Erase Cycles	19.305 mm		10 ms	524288 bit	4.5 V				.0005 Amp	19.305 mm	120 ns	5	YES
X28C512K-15	Renesas Electronics	EEPROM	COMMERCIAL	36	PGA	SQUARE	CERAMIC	NO		CMOS		PIN/PEG	PARALLEL		50 mA	65536 words	5	YES	5	8	GRID ARRAY	PGA36,7X7	EEPROMs		2.54 mm	70 Cel			64KX8	64K	0 Cel	NO		PERPENDICULAR	S-XPGA-P36			100000 Write/Erase Cycles		Not Qualified	10 ms	524288 bit			128		.0005 Amp		150 ns		YES
X28C010K-15	Renesas Electronics	EEPROM	COMMERCIAL	36	PGA	SQUARE	CERAMIC	NO		CMOS		PIN/PEG	PARALLEL		50 mA	131072 words	5	YES	5	8	GRID ARRAY	PGA36,7X7	EEPROMs		2.54 mm	70 Cel			128KX8	128K	0 Cel	NO		PERPENDICULAR	S-XPGA-P36					Not Qualified		1048576 bit			256		.0005 Amp		150 ns		YES
X28C512K-12	Renesas Electronics	EEPROM	COMMERCIAL	36	PGA	SQUARE	CERAMIC	NO		CMOS		PIN/PEG	PARALLEL		50 mA	65536 words	5	YES	5	8	GRID ARRAY	PGA36,7X7	EEPROMs		2.54 mm	70 Cel			64KX8	64K	0 Cel	NO		PERPENDICULAR	S-XPGA-P36			100000 Write/Erase Cycles		Not Qualified	10 ms	524288 bit			128		.0005 Amp		120 ns		YES
X28C512KI-90	Renesas Electronics	EEPROM	INDUSTRIAL	36	PGA	SQUARE	CERAMIC	NO		CMOS		PIN/PEG	PARALLEL		50 mA	65536 words	5	YES	5	8	GRID ARRAY	PGA36,7X7	EEPROMs		2.54 mm	85 Cel			64KX8	64K	-40 Cel	NO		PERPENDICULAR	S-XPGA-P36			100000 Write/Erase Cycles		Not Qualified	10 ms	524288 bit			128		.0005 Amp		90 ns		YES
X28C512KI-20	Renesas Electronics	EEPROM		36	PGA	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	5	YES		8	GRID ARRAY	PGA36,7X7		10	2.54 mm	85 Cel		3-STATE	64KX8	64K	-40 Cel	NO		PERPENDICULAR	S-CPGA-P36	5.5 V	4.88 mm	100000 Write/Erase Cycles	19.305 mm		10 ms	524288 bit	4.5 V				.0005 Amp	19.305 mm	200 ns	5	YES
X28C010KM-25	Renesas Electronics	EEPROM		36	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	50 mA	131072 words	5	YES		8	GRID ARRAY	PGA36,7X7		100	2.54 mm	125 Cel	NO	3-STATE	128KX8	128K	-55 Cel			PERPENDICULAR	S-CPGA-P36	5.5 V	4.88 mm	100000 Write/Erase Cycles	19.305 mm		10 ms	1048576 bit	4.5 V		256		.0005 Amp	19.305 mm	250 ns	5	YES
X28C512KM-20	Renesas Electronics	EEPROM		36	PGA	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	5	YES		8	GRID ARRAY	PGA36,7X7		10	2.54 mm	125 Cel		3-STATE	64KX8	64K	-55 Cel	NO		PERPENDICULAR	S-CPGA-P36	5.5 V	4.88 mm	100000 Write/Erase Cycles	19.305 mm		10 ms	524288 bit	4.5 V				.0005 Amp	19.305 mm	200 ns	5	YES
X28C512K-25	Renesas Electronics	EEPROM	COMMERCIAL	36	PGA	SQUARE	CERAMIC	NO		CMOS		PIN/PEG	PARALLEL		50 mA	65536 words	5	YES	5	8	GRID ARRAY	PGA36,7X7	EEPROMs		2.54 mm	70 Cel			64KX8	64K	0 Cel	NO		PERPENDICULAR	S-XPGA-P36			100000 Write/Erase Cycles		Not Qualified	10 ms	524288 bit			128		.0005 Amp		250 ns		YES
X28C010KM-12	Renesas Electronics	EEPROM		36	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	50 mA	131072 words	5	YES		8	GRID ARRAY	PGA36,7X7		100	2.54 mm	125 Cel	NO	3-STATE	128KX8	128K	-55 Cel			PERPENDICULAR	S-CPGA-P36	5.5 V	4.88 mm	100000 Write/Erase Cycles	19.305 mm		10 ms	1048576 bit	4.5 V		256		.0005 Amp	19.305 mm	120 ns	5	YES
X28C512KMB-25	Renesas Electronics	EEPROM		36	PGA	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-STD-883	PIN/PEG	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	5	YES		8	GRID ARRAY	PGA36,7X7		10	2.54 mm	125 Cel		3-STATE	64KX8	64K	-55 Cel	NO		PERPENDICULAR	S-CPGA-P36	5.5 V	4.88 mm	100000 Write/Erase Cycles	19.305 mm		10 ms	524288 bit	4.5 V				.0005 Amp	19.305 mm	90 ns	5	YES
X28C010KM-20	Renesas Electronics	EEPROM	MILITARY	36	PGA	SQUARE	CERAMIC	NO		CMOS		PIN/PEG	PARALLEL		50 mA	131072 words	5	YES	5	8	GRID ARRAY	PGA36,7X7	EEPROMs		2.54 mm	125 Cel			128KX8	128K	-55 Cel	NO		PERPENDICULAR	S-XPGA-P36					Not Qualified		1048576 bit			256		.0005 Amp		200 ns		YES
X28C512KI-15	Renesas Electronics	EEPROM	INDUSTRIAL	36	PGA	SQUARE	CERAMIC	NO		CMOS		PIN/PEG	PARALLEL		50 mA	65536 words	5	YES	5	8	GRID ARRAY	PGA36,7X7	EEPROMs		2.54 mm	85 Cel			64KX8	64K	-40 Cel	NO		PERPENDICULAR	S-XPGA-P36			100000 Write/Erase Cycles		Not Qualified	10 ms	524288 bit			128		.0005 Amp		150 ns		YES
X28C512KMB-90	Renesas Electronics	EEPROM	MILITARY	36	PGA	SQUARE	CERAMIC	NO		CMOS	38535Q/M;38534H;883B	PIN/PEG	PARALLEL		50 mA	65536 words	5	YES	5	8	GRID ARRAY	PGA36,7X7	EEPROMs		2.54 mm	125 Cel			64KX8	64K	-55 Cel	NO		PERPENDICULAR	S-XPGA-P36			100000 Write/Erase Cycles		Not Qualified	10 ms	524288 bit			128		.0005 Amp		90 ns		YES
X28C512KM-90	Renesas Electronics	EEPROM	MILITARY	36	PGA	SQUARE	CERAMIC	NO		CMOS		PIN/PEG	PARALLEL		50 mA	65536 words	5	YES	5	8	GRID ARRAY	PGA36,7X7	EEPROMs		2.54 mm	125 Cel			64KX8	64K	-55 Cel	NO		PERPENDICULAR	S-XPGA-P36			100000 Write/Erase Cycles		Not Qualified	10 ms	524288 bit			128		.0005 Amp		90 ns		YES
X28C010KMB-12	Renesas Electronics	EEPROM		36	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-STD-883	PIN/PEG	PARALLEL	ASYNCHRONOUS	50 mA	131072 words	5	YES		8	GRID ARRAY	PGA36,7X7		100	2.54 mm	125 Cel	NO	3-STATE	128KX8	128K	-55 Cel			PERPENDICULAR	S-CPGA-P36	5.5 V	4.88 mm	100000 Write/Erase Cycles	19.305 mm		10 ms	1048576 bit	4.5 V		256		.0005 Amp	19.305 mm	120 ns	5	YES
X28C512K-20	Renesas Electronics	EEPROM	COMMERCIAL	36	PGA	SQUARE	CERAMIC	NO		CMOS		PIN/PEG	PARALLEL		50 mA	65536 words	5	YES	5	8	GRID ARRAY	PGA36,7X7	EEPROMs		2.54 mm	70 Cel			64KX8	64K	0 Cel	NO		PERPENDICULAR	S-XPGA-P36			100000 Write/Erase Cycles		Not Qualified	10 ms	524288 bit			128		.0005 Amp		200 ns		YES
X28C512KI-12	Renesas Electronics	EEPROM	INDUSTRIAL	36	PGA	SQUARE	CERAMIC	NO		CMOS		PIN/PEG	PARALLEL		50 mA	65536 words	5	YES	5	8	GRID ARRAY	PGA36,7X7	EEPROMs		2.54 mm	85 Cel			64KX8	64K	-40 Cel	NO		PERPENDICULAR	S-XPGA-P36			100000 Write/Erase Cycles		Not Qualified	10 ms	524288 bit			128		.0005 Amp		120 ns		YES
X28C512K-90	Renesas Electronics	EEPROM	COMMERCIAL	36	PGA	SQUARE	CERAMIC	NO		CMOS		PIN/PEG	PARALLEL		50 mA	65536 words	5	YES	5	8	GRID ARRAY	PGA36,7X7	EEPROMs		2.54 mm	70 Cel			64KX8	64K	0 Cel	NO		PERPENDICULAR	S-XPGA-P36			100000 Write/Erase Cycles		Not Qualified	10 ms	524288 bit			128		.0005 Amp		90 ns		YES
X28C010K-25	Renesas Electronics	EEPROM		36	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	50 mA	131072 words	5	YES		8	GRID ARRAY	PGA36,7X7		100	2.54 mm	70 Cel	NO	3-STATE	128KX8	128K	0 Cel			PERPENDICULAR	S-CPGA-P36	5.5 V	4.88 mm	100000 Write/Erase Cycles	19.305 mm		10 ms	1048576 bit	4.5 V		256		.0005 Amp	19.305 mm	250 ns	5	YES
X28C010KM-15	Renesas Electronics	EEPROM	MILITARY	36	PGA	SQUARE	CERAMIC	NO		CMOS		PIN/PEG	PARALLEL		50 mA	131072 words	5	YES	5	8	GRID ARRAY	PGA36,7X7	EEPROMs		2.54 mm	125 Cel			128KX8	128K	-55 Cel	NO		PERPENDICULAR	S-XPGA-P36					Not Qualified		1048576 bit			256		.0005 Amp		150 ns		YES
X28C512KM-25	Renesas Electronics	EEPROM		36	PGA	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	5	YES		8	GRID ARRAY	PGA36,7X7		10	2.54 mm	125 Cel		3-STATE	64KX8	64K	-55 Cel	NO		PERPENDICULAR	S-CPGA-P36	5.5 V	4.88 mm	100000 Write/Erase Cycles	19.305 mm		10 ms	524288 bit	4.5 V				.0005 Amp	19.305 mm	90 ns	5	YES
X28C512KI-25	Renesas Electronics	EEPROM	INDUSTRIAL	36	PGA	SQUARE	CERAMIC	NO		CMOS		PIN/PEG	PARALLEL		50 mA	65536 words	5	YES	5	8	GRID ARRAY	PGA36,7X7	EEPROMs		2.54 mm	85 Cel			64KX8	64K	-40 Cel	NO		PERPENDICULAR	S-XPGA-P36			100000 Write/Erase Cycles		Not Qualified	10 ms	524288 bit			128		.0005 Amp		250 ns		YES
X28C010KMB-15	Renesas Electronics	EEPROM		36	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-STD-883	PIN/PEG	PARALLEL	ASYNCHRONOUS	50 mA	131072 words	5	YES		8	GRID ARRAY	PGA36,7X7		100	2.54 mm	125 Cel	NO	3-STATE	128KX8	128K	-55 Cel			PERPENDICULAR	S-CPGA-P36	5.5 V	4.88 mm	100000 Write/Erase Cycles	19.305 mm		10 ms	1048576 bit	4.5 V		256		.0005 Amp	19.305 mm	150 ns	5	YES
X28C512KMB-20	Renesas Electronics	EEPROM	MILITARY	36	PGA	SQUARE	CERAMIC	NO		CMOS	38535Q/M;38534H;883B	PIN/PEG	PARALLEL		50 mA	65536 words	5	YES	5	8	GRID ARRAY	PGA36,7X7	EEPROMs		2.54 mm	125 Cel			64KX8	64K	-55 Cel	NO		PERPENDICULAR	S-XPGA-P36			100000 Write/Erase Cycles		Not Qualified	10 ms	524288 bit			128		.0005 Amp		200 ns		YES

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.