SOP EEPROM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	I2C Control Byte	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Programming Voltage (V)
CAT93C56VA-T3E	Onsemi	EEPROM CARD	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words	5	3/5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	100	1.27 mm	105 Cel	128X16	128	-40 Cel	MATTE TIN		DUAL	SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified		MICROWIRE	2048 bit	4.5 V	IT ALSO OPERATES AT 0.5MHZ AT 2.5MIN	e3			.00001 Amp	4.9 mm	2.7
CAT93C56VE-G	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words	5	3/5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	100	1.27 mm	125 Cel	128X16	128	-40 Cel	NICKEL PALLADIUM GOLD		DUAL	SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	2 MHz	3.9 mm	Not Qualified		MICROWIRE	2048 bit	1.8 V		e4		260	.00001 Amp	4.9 mm	2.7
CAT93C86XA-1.8TE13REVC	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		1024 words	5		16	SMALL OUTLINE		8			1.27 mm	105 Cel	1KX16	1K	-40 Cel	MATTE TIN		DUAL		R-PDSO-G8		6 V	2.03 mm		.5 MHz	5.25 mm	Not Qualified		MICROWIRE	16384 bit	1.8 V		e3				5.3 mm
CAT93C66ASI-TE7	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		256 words	5		16	SMALL OUTLINE					1.27 mm	85 Cel	256X16	256	-40 Cel	TIN LEAD		DUAL		R-PDSO-G8		5.5 V	1.75 mm		1 MHz	3.9 mm	Not Qualified	10 ms	MICROWIRE	4096 bit	4.5 V	MICROWIRE BUS SERIAL INTERFACE; AUTOMATIC WRITE	e0				4.9 mm
CAT93C86SA-1.8TE13REVC	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		1024 words	5		16	SMALL OUTLINE		8			1.27 mm	105 Cel	1KX16	1K	-40 Cel	TIN LEAD		DUAL		R-PDSO-G8		6 V	1.75 mm		.5 MHz	3.9 mm	Not Qualified		MICROWIRE	16384 bit	1.8 V		e0				4.9 mm
CAT93C57VI-T3E	Onsemi	EEPROM CARD	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words	5	3/5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	100	1.27 mm	85 Cel	128X16	128	-40 Cel	MATTE TIN		DUAL	SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified		MICROWIRE	2048 bit	4.5 V	IT ALSO OPERATES AT 0.5MHZ AT 2.5MIN	e3			.00001 Amp	4.9 mm	2.7
CAT93C86VE-1.8T3REVC	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		1024 words	5		16	SMALL OUTLINE		8			1.27 mm	125 Cel	1KX16	1K	-40 Cel	MATTE TIN		DUAL		R-PDSO-G8		5.5 V	1.75 mm		.5 MHz	3.9 mm	Not Qualified		MICROWIRE	16384 bit	1.8 V		e3				4.9 mm
CAT93C56XA-1.8	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words	5	2/5	16	SMALL OUTLINE	SOP8,.3	8	EEPROMs	100	1.27 mm	105 Cel	128X16	128	-40 Cel	MATTE TIN		DUAL	SOFTWARE	R-PDSO-G8		6 V	2.03 mm	1000000 Write/Erase Cycles	.25 MHz	5.25 mm	Not Qualified		MICROWIRE	2048 bit	1.8 V	1000000 PROGRAM/ERASE CYCLES; 100 YEAR DATA RETENTION	e3			.00001 Amp	5.3 mm
CAT93C86JI-TE13	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		1024 words	5		16	SMALL OUTLINE		8		100	1.27 mm	85 Cel	1KX16	1K	-40 Cel	TIN LEAD		DUAL		R-PDSO-G8		6 V	1.75 mm		1 MHz	3.9 mm	Not Qualified		MICROWIRE	16384 bit	2.5 V	1000000 PROGRAM/ERASE CYCLES; 100 YEAR DATA RETENTION	e0				4.9 mm
CAT93C66VA-T3E	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	5	3/5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	100	1.27 mm	105 Cel	256X16	256	-40 Cel	MATTE TIN		DUAL	SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified		MICROWIRE	4096 bit	4.5 V	IT ALSO OPERATES AT 0.5MHZ AT 2.5MIN	e3			.00001 Amp	4.9 mm
CAT93C56S-1.8TE13	Onsemi	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		128 words	5		16	SMALL OUTLINE		8		100	1.27 mm	70 Cel	128X16	128	0 Cel	TIN LEAD		DUAL		R-PDSO-G8		6 V	1.75 mm		.25 MHz	3.9 mm	Not Qualified		MICROWIRE	2048 bit	1.8 V	1000000 PROGRAM/ERASE CYCLES; 100 YEAR DATA RETENTION	e0	30	240		4.9 mm
CAT93C66K	Onsemi	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		256 words	5		16	SMALL OUTLINE		8		100	1.27 mm	70 Cel	256X16	256	0 Cel	TIN LEAD		DUAL		R-PDSO-G8		6 V	2.03 mm		.5 MHz	5.25 mm	Not Qualified		MICROWIRE	4096 bit	2.5 V	1000000 PROGRAM/ERASE CYCLES; 100 YEAR DATA RETENTION	e0				5.3 mm
CAT93C76J-TE13REVA	Onsemi	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		512 words	5		16	SMALL OUTLINE		8			1.27 mm	70 Cel	512X16	512	0 Cel	TIN LEAD		DUAL		R-PDSO-G8		5.5 V	1.75 mm		3 MHz	3.9 mm	Not Qualified		MICROWIRE	8192 bit	2.5 V		e0				4.9 mm
CAT93C66WI-1.8-T2	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		3 mA	256 words		2/5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	100	1.27 mm	85 Cel	256X16	256	-40 Cel			DUAL	SOFTWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		MICROWIRE	4096 bit						.00001 Amp
CAT93C86WA-T2	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	1024 words	5	3/5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	100	1.27 mm	105 Cel	1KX16	1K	-40 Cel	MATTE TIN		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	3 MHz	3.9 mm	Not Qualified		MICROWIRE	16384 bit	4.5 V	IT ALSO OPERATES AT 1MHZ AT 2.5MIN	e3			.00001 Amp	4.9 mm
CAT93C57WE-T3REVE	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		128 words	5		16	SMALL OUTLINE		8			1.27 mm	125 Cel	128X16	128	-40 Cel	MATTE TIN		DUAL		R-PDSO-G8		5.5 V	1.75 mm		.5 MHz	3.9 mm	Not Qualified		MICROWIRE	2048 bit	2.5 V		e3	40	260		4.9 mm
CAT93C46BVE-GT3	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		64 words	5		16	SMALL OUTLINE		8			1.27 mm	125 Cel	64X16	64	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)		DUAL		R-PDSO-G8	1	5.5 V	1.75 mm		2 MHz	3.9 mm			MICROWIRE	1024 bit	1.8 V	ALSO AVAILABLE 1.8-5.5V WITH 2MHZ FOR -40 TO 85 DEG CEL	e4	30	260		4.9 mm
CAT93C66VI-TE7	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		512 words	5		8	SMALL OUTLINE		16			1.27 mm	85 Cel	512X8	512	-40 Cel	MATTE TIN		DUAL		R-PDSO-G8		5.5 V	1.75 mm		1 MHz	3.9 mm	Not Qualified	10 ms	MICROWIRE	4096 bit	4.5 V	MICROWIRE BUS SERIAL INTERFACE; AUTOMATIC WRITE	e3				4.9 mm
CAT93C66VA-GT2E	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	5	3/5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	100	1.27 mm	105 Cel	256X16	256	-40 Cel	MATTE TIN		DUAL	SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified		MICROWIRE	4096 bit	4.5 V	IT ALSO OPERATES AT 0.5MHZ AT 2.5MIN	e3			.00001 Amp	4.9 mm
CAT93C66WI-TE13	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		256 words	5		16	SMALL OUTLINE		8		100	1.27 mm	85 Cel	256X16	256	-40 Cel	MATTE TIN		DUAL		R-PDSO-G8		6 V	1.75 mm		.5 MHz	3.9 mm	Not Qualified		MICROWIRE	4096 bit	2.5 V	1000000 PROGRAM/ERASE CYCLES; 100 YEAR DATA RETENTION	e3				4.9 mm
CAT93C86WI-T3C	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		3 mA	1024 words		3/5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	100	1.27 mm	85 Cel	1KX16	1K	-40 Cel			DUAL	HARDWARE/SOFTWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		MICROWIRE	16384 bit						.00001 Amp
CAT64LC40JI	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		3 mA	256 words		3/5	16	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	85 Cel	256X16	256	-40 Cel			DUAL	HARDWARE/SOFTWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		SPI	4096 bit						.000003 Amp
CAT93C86JA-TE13	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		1024 words	5		16	SMALL OUTLINE		8		100	1.27 mm	105 Cel	1KX16	1K	-40 Cel	TIN LEAD		DUAL		R-PDSO-G8		6 V	1.75 mm		1 MHz	3.9 mm	Not Qualified		MICROWIRE	16384 bit	2.5 V	1000000 PROGRAM/ERASE CYCLES; 100 YEAR DATA RETENTION	e0				4.9 mm
CAT93C57KA	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		128 words	5		16	SMALL OUTLINE		8		100	1.27 mm	105 Cel	128X16	128	-40 Cel	TIN LEAD		DUAL		R-PDSO-G8		6 V	2.03 mm		.5 MHz	5.25 mm	Not Qualified		MICROWIRE	2048 bit	2.5 V	1000000 PROGRAM/ERASE CYCLES; 100 YEAR DATA RETENTION	e0				5.3 mm
CAT150041ZWI-G	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		2 mA	512 words	2.5	2.5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	85 Cel	512X8	512	-40 Cel			DUAL	HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		SPI	4096 bit						.00002 Amp
CAT93C56XE-1.8TE13	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		128 words	5		16	SMALL OUTLINE		8		100	1.27 mm	125 Cel	128X16	128	-40 Cel	MATTE TIN		DUAL		R-PDSO-G8		6 V	2.03 mm		.25 MHz	5.25 mm	Not Qualified		MICROWIRE	2048 bit	1.8 V	1000000 PROGRAM/ERASE CYCLES; 100 YEAR DATA RETENTION	e3				5.3 mm
CAT93C86VA-G	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	1024 words	5	3/5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	100	1.27 mm	105 Cel	1KX16	1K	-40 Cel	MATTE TIN		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	3 MHz	3.9 mm	Not Qualified		MICROWIRE	16384 bit	4.5 V	IT ALSO OPERATES AT 1MHZ AT 2.5MIN	e3			.00001 Amp	4.9 mm
CAT93C86VE-T2	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	1024 words	5	3/5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	100	1.27 mm	125 Cel	1KX16	1K	-40 Cel	MATTE TIN		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	3 MHz	3.9 mm	Not Qualified		MICROWIRE	16384 bit	4.5 V	IT ALSO OPERATES AT 1MHZ AT 2.5MIN	e3			.00001 Amp	4.9 mm
CAT64LC40WA	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		3 mA	256 words		3/5	16	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	105 Cel	256X16	256	-40 Cel			DUAL	HARDWARE/SOFTWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		SPI	4096 bit						.000003 Amp
CAT93C56J-2.5TE13	Onsemi	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		256 words			8	SMALL OUTLINE		16			1.27 mm	70 Cel	256X8	256	0 Cel	TIN LEAD		DUAL		R-PDSO-G8		6 V	1.75 mm		.5 MHz	3.9 mm	Not Qualified	10 ms	MICROWIRE	2048 bit	2.5 V	MICROWIRE BUS SERIAL INTERFACE; AUTOMATIC WRITE	e0				4.9 mm
CAT93C57WE-REVE	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		128 words	5		16	SMALL OUTLINE		8			1.27 mm	125 Cel	128X16	128	-40 Cel	MATTE TIN		DUAL		R-PDSO-G8		5.5 V	1.75 mm		.5 MHz	3.9 mm	Not Qualified		MICROWIRE	2048 bit	2.5 V		e3	NOT SPECIFIED	260		4.9 mm
CAT64LC40VITE13	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	4.5	3/5	16	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	85 Cel	256X16	256	-40 Cel	MATTE TIN		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		6 V		1000000 Write/Erase Cycles	1 MHz		Not Qualified	10 ms	SPI	4096 bit	2.5 V		e3			.000003 Amp
CAT93C57JE-1.8TE13REVE	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		131072 words	3		16	SMALL OUTLINE		8			1.27 mm	125 Cel	128KX16	128K	-40 Cel	TIN LEAD		DUAL		R-PDSO-G8		6 V	1.75 mm		.25 MHz	3.9 mm	Not Qualified		MICROWIRE	2097152 bit	1.8 V		e0				4.9 mm
CAT93C56VE-1.8-GREVE	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		128 words	5		16	SMALL OUTLINE		8			1.27 mm	125 Cel	128X16	128	-40 Cel	NICKEL PALLADIUM GOLD		DUAL		R-PDSO-G8		5.5 V	1.75 mm		.5 MHz	3.9 mm	Not Qualified		MICROWIRE	2048 bit	1.8 V		e4				4.9 mm
CAT93C57JI-2.7TE13	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		256 words			8	SMALL OUTLINE		16			1.27 mm	85 Cel	256X8	256	-40 Cel	TIN LEAD		DUAL		R-PDSO-G8		6 V	1.75 mm		.5 MHz	3.9 mm	Not Qualified	10 ms	MICROWIRE	2048 bit	2.7 V	MICROWIRE BUS SERIAL INTERFACE; AUTOMATIC WRITE	e0				4.9 mm
CAT93C57WE-GT2	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		3 mA	128 words		3/5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	100	1.27 mm	125 Cel	128X16	128	-40 Cel	MATTE TIN		DUAL	SOFTWARE	R-PDSO-G8	1			1000000 Write/Erase Cycles			Not Qualified		MICROWIRE	2048 bit			e3			.00001 Amp
CAT93C56VA-GT2	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words	5	3/5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	100	1.27 mm	105 Cel	128X16	128	-40 Cel			DUAL	SOFTWARE	R-PDSO-G8		5.5 V		1000000 Write/Erase Cycles	1 MHz		Not Qualified	10 ms	MICROWIRE	2048 bit	4.5 V	Also operates at 1.8V and 2.5V				.00001 Amp
CAT140021ZWI-GT3	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	1 mA	2048 words	2.5	3/5	1	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	85 Cel	2KX1	2K	-40 Cel	NICKEL PALLADIUM GOLD	1010DDDR	DUAL	SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	2048 bit	2.25 V		e4			.000017 Amp	4.9 mm	3
CAT93C66WA-GT3	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		3 mA	256 words		3/5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	100	1.27 mm	105 Cel	256X16	256	-40 Cel			DUAL	SOFTWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		MICROWIRE	4096 bit						.00001 Amp
CAT93C56WA-1.8-GT3REVE	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		128 words	5		16	SMALL OUTLINE		8			1.27 mm	105 Cel	128X16	128	-40 Cel	NICKEL PALLADIUM GOLD		DUAL		R-PDSO-G8		5.5 V	1.75 mm		.25 MHz	3.9 mm	Not Qualified		MICROWIRE	2048 bit	1.8 V		e4				4.9 mm
CAT93C57VI-1.8-T3	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		3 mA	128 words		2/5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	100	1.27 mm	85 Cel	128X16	128	-40 Cel	MATTE TIN		DUAL	SOFTWARE	R-PDSO-G8	1			1000000 Write/Erase Cycles			Not Qualified		MICROWIRE	2048 bit			e3			.00001 Amp
LE25LB643M	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		3 mA	8192 words		2/3.3	8	SMALL OUTLINE	SOP8,.25		EEPROMs	20	1.27 mm	85 Cel	8KX8	8K	-40 Cel			DUAL	HARDWARE/SOFTWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		SPI	65536 bit						.000002 Amp
CAT93C66K-1.8	Onsemi	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		256 words	5		16	SMALL OUTLINE		8		100	1.27 mm	70 Cel	256X16	256	0 Cel	TIN LEAD		DUAL		R-PDSO-G8		6 V	2.03 mm		.25 MHz	5.25 mm	Not Qualified		MICROWIRE	4096 bit	1.8 V	1000000 PROGRAM/ERASE CYCLES; 100 YEAR DATA RETENTION	e0				5.3 mm
CAT93C86WE-1.8-GT3C	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		3 mA	1024 words		2/5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	100	1.27 mm	125 Cel	1KX16	1K	-40 Cel			DUAL	HARDWARE/SOFTWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		MICROWIRE	16384 bit						.00001 Amp
CAT93C56VE-1.8-GT3E	Onsemi	EEPROM CARD	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words	5	2/5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	100	1.27 mm	125 Cel	128X16	128	-40 Cel	MATTE TIN		DUAL	SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified		MICROWIRE	2048 bit	4.5 V	IT ALSO OPERATES AT 0.25MHZ AT 1.8MIN	e3			.00001 Amp	4.9 mm	2.7
CAT93C56WA-T2REVE	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		128 words	5		16	SMALL OUTLINE		8			1.27 mm	105 Cel	128X16	128	-40 Cel	MATTE TIN		DUAL		R-PDSO-G8		5.5 V	1.75 mm		.5 MHz	3.9 mm	Not Qualified		MICROWIRE	2048 bit	2.5 V		e3				4.9 mm
CAT93C86XI-1.8-T2	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	1024 words	5	2/5	16	SMALL OUTLINE	SOP8,.3	8	EEPROMs	100	1.27 mm	85 Cel	1KX16	1K	-40 Cel	MATTE TIN		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	2.03 mm	1000000 Write/Erase Cycles	3 MHz	5.23 mm	Not Qualified		MICROWIRE	16384 bit	4.5 V	IT ALSO OPERATES AT 0.5MHZ AT 1.8MIN	e3			.00001 Amp	5.255 mm
CAT93C76VA-1.8TE13REVA	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		512 words	5		16	SMALL OUTLINE		8			1.27 mm	105 Cel	512X16	512	-40 Cel	MATTE TIN		DUAL		R-PDSO-G8		5.5 V	1.75 mm		1 MHz	3.9 mm	Not Qualified		MICROWIRE	8192 bit	1.8 V		e3				4.9 mm

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.