TQFP EEPROM 84

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Total Dose (V)	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time
XC17V16VQ44I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	TQFP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL/SERIAL	SYNCHRONOUS	100 mA	2097152 words	COMMON	3.3	3.3	8	FLATPACK, THIN PROFILE	TQFP44,.47SQ,32	OTP ROMs		.8 mm	85 Cel	3-STATE	2MX8	2M	-40 Cel	Tin/Lead (Sn85Pb15)	QUAD	S-PQFP-G44	3	3.6 V	1.2 mm		20 MHz	10 mm	Not Qualified	16777216 bit	3 V		e0	30	240		.001 Amp	10 mm
XC18V04VQ44C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	TQFP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	524288 words		3.3	2.5/3.3,3.3	8	FLATPACK, THIN PROFILE	TQFP44,.47SQ,32	Flash Memories	20	.8 mm	85 Cel		512KX8	512K	-40 Cel	TIN LEAD	QUAD	S-PQFP-G44	3	3.6 V	1.2 mm	20000 Write/Erase Cycles	20 MHz	10 mm	Not Qualified	4194304 bit	3 V		e0	30	240	NOR TYPE	.01 Amp	10 mm	20 ns
XC18V04VQ44C0936	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	TQFP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL/SERIAL	SYNCHRONOUS		524288 words		3.3		8	FLATPACK, THIN PROFILE				.8 mm	85 Cel		512KX8	512K	-40 Cel	TIN LEAD	QUAD	S-PQFP-G44	3	3.6 V	1.2 mm			10 mm	Not Qualified	4194304 bit	3 V		e0					10 mm	20 ns
XC18V01VQG44C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	TQFP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	131072 words		3.3	2.5/3.3,3.3	8	FLATPACK, THIN PROFILE	TQFP44,.47SQ,32	Flash Memories	20	.8 mm	85 Cel		128KX8	128K	-40 Cel	Matte Tin (Sn)	QUAD	S-PQFP-G44	3	3.6 V	1.2 mm	20000 Write/Erase Cycles	33 MHz	10 mm	Not Qualified	1048576 bit	3 V		e3	30	260	NOR TYPE	.01 Amp	10 mm	15 ns
XC18V04VQ44C0901	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	TQFP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL/SERIAL	SYNCHRONOUS		524288 words		3.3		8	FLATPACK, THIN PROFILE				.8 mm	85 Cel		512KX8	512K	-40 Cel	TIN LEAD	QUAD	S-PQFP-G44	3	3.6 V	1.2 mm			10 mm	Not Qualified	4194304 bit	3 V		e0					10 mm	20 ns
XC18V01VQ44C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	TQFP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	131072 words		3.3	2.5/3.3,3.3	8	FLATPACK, THIN PROFILE	TQFP44,.47SQ,32	Flash Memories	20	.8 mm	85 Cel		128KX8	128K	-40 Cel	TIN LEAD	QUAD	S-PQFP-G44	3	3.6 V	1.2 mm	20000 Write/Erase Cycles	33 MHz	10 mm	Not Qualified	1048576 bit	3 V		e0	30	240	NOR TYPE	.01 Amp	10 mm	15 ns
XC18V01VQ44I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	TQFP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	131072 words		3.3	2.5/3.3,3.3	8	FLATPACK, THIN PROFILE	TQFP44,.47SQ,32	Flash Memories	10	.8 mm	85 Cel		128KX8	128K	-40 Cel	Tin/Lead (Sn85Pb15)	QUAD	S-PQFP-G44	3	3.6 V	1.2 mm	10000 Write/Erase Cycles	33 MHz	10 mm	Not Qualified	1048576 bit	3 V		e0	30	240	NOR TYPE	.01 Amp	10 mm	15 ns
XC18V04VQ44C0799	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	TQFP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL/SERIAL	SYNCHRONOUS		524288 words		3.3		8	FLATPACK, THIN PROFILE				.8 mm	85 Cel		512KX8	512K	-40 Cel		QUAD	S-PQFP-G44		3.6 V	1.2 mm			10 mm	Not Qualified	4194304 bit	3 V							10 mm	20 ns
XC18V02VQ44C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	TQFP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	262144 words		3.3	2.5/3.3,3.3	8	FLATPACK, THIN PROFILE	TQFP44,.47SQ,32	Flash Memories	20	.8 mm	85 Cel		256KX8	256K	-40 Cel	TIN LEAD	QUAD	S-PQFP-G44	3	3.6 V	1.2 mm	20000 Write/Erase Cycles	20 MHz	10 mm	Not Qualified	2097152 bit	3 V		e0	30	240	NOR TYPE	.01 Amp	10 mm	20 ns
XC18V02VQG44C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	TQFP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	262144 words		3.3	2.5/3.3,3.3	8	FLATPACK, THIN PROFILE	TQFP44,.47SQ,32	Flash Memories	20	.8 mm	85 Cel		256KX8	256K	-40 Cel	Matte Tin (Sn)	QUAD	S-PQFP-G44	3	3.6 V	1.2 mm	20000 Write/Erase Cycles	20 MHz	10 mm	Not Qualified	2097152 bit	3 V		e3	30	260	NOR TYPE	.01 Amp	10 mm	20 ns
XC18V04VQ44I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	TQFP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	524288 words		3.3	2.5/3.3,3.3	8	FLATPACK, THIN PROFILE	TQFP44,.47SQ,32	Flash Memories	10	.8 mm	85 Cel		512KX8	512K	-40 Cel	Tin/Lead (Sn85Pb15)	QUAD	S-PQFP-G44	3	3.6 V	1.2 mm	10000 Write/Erase Cycles	33 MHz	10 mm	Not Qualified	4194304 bit	3 V		e0	30	240	NOR TYPE	.01 Amp	10 mm	20 ns
XC18V04VQG44C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	TQFP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	524288 words		3.3	2.5/3.3,3.3	8	FLATPACK, THIN PROFILE	TQFP44,.47SQ,32	Flash Memories	20	.8 mm	85 Cel		512KX8	512K	-40 Cel	Matte Tin (Sn)	QUAD	S-PQFP-G44	3	3.6 V	1.2 mm	20000 Write/Erase Cycles	20 MHz	10 mm	Not Qualified	4194304 bit	3 V		e3	30	260	NOR TYPE	.01 Amp	10 mm	20 ns
XC18V02VQ44I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	TQFP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	262144 words		3.3	2.5/3.3,3.3	8	FLATPACK, THIN PROFILE	TQFP44,.47SQ,32	Flash Memories	10	.8 mm	85 Cel		256KX8	256K	-40 Cel	Tin/Lead (Sn85Pb15)	QUAD	S-PQFP-G44	3	3.6 V	1.2 mm	10000 Write/Erase Cycles	33 MHz	10 mm	Not Qualified	2097152 bit	3 V		e0	30	240	NOR TYPE	.01 Amp	10 mm	20 ns
XQ17V16VQ44N	Xilinx	CONFIGURATION MEMORY	MILITARY	44	TQFP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL/SERIAL	SYNCHRONOUS	100 mA	2097152 words	COMMON	3.3	3.3	8	FLATPACK, THIN PROFILE	TQFP44,.47SQ,32	OTP ROMs		.8 mm	125 Cel	3-STATE	2MX8	2M	-55 Cel	Tin/Lead (Sn85Pb15)	QUAD	S-PQFP-G44	3	3.6 V	1.2 mm		33 MHz	10 mm	Not Qualified	16777216 bit	3 V		e0	30	240		.001 Amp	10 mm	20 ns
XC18V01VQG44C0901	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	TQFP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL/SERIAL	SYNCHRONOUS		131072 words		3.3		8	FLATPACK, THIN PROFILE				.8 mm	85 Cel		128KX8	128K	-40 Cel	MATTE TIN	QUAD	S-PQFP-G44	3	3.6 V	1.2 mm			10 mm	Not Qualified	1048576 bit	3 V		e3					10 mm	15 ns
XC18V02VQ44C0799	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	TQFP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL/SERIAL	SYNCHRONOUS		262144 words		3.3		8	FLATPACK, THIN PROFILE				.8 mm	85 Cel		256KX8	256K	-40 Cel		QUAD	S-PQFP-G44		3.6 V	1.2 mm			10 mm	Not Qualified	2097152 bit	3 V							10 mm	20 ns
XC18V01VQ44C0901	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	TQFP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL/SERIAL	SYNCHRONOUS		131072 words		3.3		8	FLATPACK, THIN PROFILE				.8 mm	85 Cel		128KX8	128K	-40 Cel	TIN LEAD	QUAD	S-PQFP-G44	3	3.6 V	1.2 mm			10 mm	Not Qualified	1048576 bit	3 V		e0					10 mm	15 ns
XC18V512VQ44C0901	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	TQFP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL/SERIAL	SYNCHRONOUS		65536 words		3.3		8	FLATPACK, THIN PROFILE				.8 mm	85 Cel		64KX8	64K	-40 Cel	TIN LEAD	QUAD	S-PQFP-G44	3	3.6 V	1.2 mm			10 mm	Not Qualified	524288 bit	3 V		e0					10 mm	15 ns
XC18V512VQG44I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	TQFP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL/SERIAL	SYNCHRONOUS		65536 words		3.3		8	FLATPACK, THIN PROFILE				.8 mm	85 Cel		64KX8	64K	-40 Cel	MATTE TIN	QUAD	S-PQFP-G44	3	3.6 V	1.2 mm			10 mm	Not Qualified	524288 bit	3 V		e3	30	260			10 mm	15 ns
XQ18V04VQ44N	Xilinx	CONFIGURATION MEMORY	MILITARY	44	TQFP	SQUARE	40k Rad(Si)	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL/SERIAL	SYNCHRONOUS	50 mA	524288 words		3.3	2.5/3.3	8	FLATPACK, THIN PROFILE	TQFP44,.47SQ,32	Flash Memories	10	.8 mm	125 Cel		512KX8	512K	-55 Cel	Tin/Lead (Sn85Pb15)	QUAD	S-PQFP-G44	3	3.6 V	1.2 mm	20000 Write/Erase Cycles	20 MHz	10 mm	Not Qualified	4194304 bit	3 V		e0	30	240	NOR TYPE	.02 Amp	10 mm
XC18V512VQG44C0901	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	TQFP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL/SERIAL	SYNCHRONOUS		65536 words		3.3		8	FLATPACK, THIN PROFILE				.8 mm	85 Cel		64KX8	64K	-40 Cel	MATTE TIN	QUAD	S-PQFP-G44	3	3.6 V	1.2 mm			10 mm	Not Qualified	524288 bit	3 V		e3					10 mm	15 ns
XQ18V04VQG44N	Xilinx	CONFIGURATION MEMORY	MILITARY	44	TQFP	SQUARE	40k Rad(Si)	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL/SERIAL	SYNCHRONOUS		524288 words		3.3		8	FLATPACK, THIN PROFILE				.8 mm	125 Cel		512KX8	512K	-55 Cel	Matte Tin (Sn)	QUAD	S-PQFP-G44	3	3.6 V	1.2 mm			10 mm	Not Qualified	4194304 bit	3 V		e3	30	260			10 mm
XC18V04VQG44C0901	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	TQFP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL/SERIAL	SYNCHRONOUS		524288 words		3.3		8	FLATPACK, THIN PROFILE				.8 mm	85 Cel		512KX8	512K	-40 Cel	MATTE TIN	QUAD	S-PQFP-G44	3	3.6 V	1.2 mm			10 mm	Not Qualified	4194304 bit	3 V		e3					10 mm	20 ns
XQR17V16VQ44N	Xilinx	CONFIGURATION MEMORY	MILITARY	44	TQFP	SQUARE	50k Rad(Si)	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL/SERIAL	SYNCHRONOUS	100 mA	2097152 words	COMMON	3.3	3.3	8	FLATPACK, THIN PROFILE	TQFP44,.47SQ,32	OTP ROMs		.8 mm	125 Cel	3-STATE	2MX8	2M	-55 Cel	TIN LEAD	QUAD	S-PQFP-G44	3	3.6 V	1.2 mm			10 mm	Not Qualified	16777216 bit	3 V		e0	30	240		.001 Amp	10 mm
XC18V128VQ44I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	TQFP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL/SERIAL	SYNCHRONOUS		131072 words		3.3		1	FLATPACK, THIN PROFILE				.8 mm	85 Cel		128KX1	128K	-40 Cel	TIN LEAD	QUAD	S-PQFP-G44	3	3.6 V	1.2 mm			10 mm	Not Qualified	131072 bit	3 V		e0					10 mm	20 ns
XQR17V16VQG44R	Xilinx	CONFIGURATION MEMORY	MILITARY	44	TQFP	SQUARE	50k Rad(Si)	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL/SERIAL	SYNCHRONOUS		2097152 words		3.3		8	FLATPACK, THIN PROFILE				.8 mm	125 Cel		2MX8	2M	-55 Cel	MATTE TIN	QUAD	S-PQFP-G44	3	3.6 V	1.2 mm			10 mm	Not Qualified	16777216 bit	3 V		e3	30	260			10 mm
XC18V01VQG44C0936	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	TQFP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL/SERIAL	SYNCHRONOUS		131072 words		3.3		8	FLATPACK, THIN PROFILE				.8 mm	85 Cel		128KX8	128K	-40 Cel	MATTE TIN	QUAD	S-PQFP-G44	3	3.6 V	1.2 mm			10 mm	Not Qualified	1048576 bit	3 V		e3					10 mm	15 ns
XQ17V16VQG44N	Xilinx	CONFIGURATION MEMORY	MILITARY	44	TQFP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL/SERIAL	SYNCHRONOUS		2097152 words		3.3		8	FLATPACK, THIN PROFILE				.8 mm	125 Cel		2MX8	2M	-55 Cel	MATTE TIN	QUAD	S-PQFP-G44	3	3.6 V	1.2 mm			10 mm	Not Qualified	16777216 bit	3 V		e3	30	260			10 mm	20 ns
XC18V01VQ44C0936	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	TQFP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL/SERIAL	SYNCHRONOUS		131072 words		3.3		8	FLATPACK, THIN PROFILE				.8 mm	85 Cel		128KX8	128K	-40 Cel	TIN LEAD	QUAD	S-PQFP-G44	3	3.6 V	1.2 mm			10 mm	Not Qualified	1048576 bit	3 V		e0					10 mm	15 ns
XC18V256VQ44C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	44	TQFP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	32768 words		3.3	2.5/3.3,3.3	8	FLATPACK, THIN PROFILE	TQFP44,.47SQ,32	Flash Memories	10	.8 mm	70 Cel		32KX8	32K	0 Cel	TIN LEAD	QUAD	S-PQFP-G44	3	3.6 V	1.2 mm	10000 Write/Erase Cycles	33 MHz	10 mm	Not Qualified	262144 bit	3 V		e0	30	240	NOR TYPE	.01 Amp	10 mm	15 ns
XC18V128VQ44C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	44	TQFP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL/SERIAL	SYNCHRONOUS		131072 words		3.3		1	FLATPACK, THIN PROFILE				.8 mm	70 Cel		128KX1	128K	0 Cel		QUAD	S-PQFP-G44		3.6 V	1.2 mm			10 mm	Not Qualified	131072 bit	3 V							10 mm	20 ns
XC1804VQ44C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	44	TQFP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	30 mA	4194304 words		3.3	2.5/3.3,3.3	1	FLATPACK, THIN PROFILE	TQFP44,.47SQ,32	Flash Memories	10	.8 mm	70 Cel		4MX1	4M	0 Cel	TIN LEAD	QUAD	S-PQFP-G44	3	3.6 V	1.2 mm	10000 Write/Erase Cycles	15 MHz	10 mm	Not Qualified	4194304 bit	3 V	SERIAL MODE ALSO AVAILABLE	e0	30	240	NOR TYPE	.0001 Amp	10 mm	45 ns
XC18V512VQ44I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	TQFP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	65536 words		3.3	2.5/3.3,3.3	8	FLATPACK, THIN PROFILE	TQFP44,.47SQ,32	Flash Memories	10	.8 mm	85 Cel		64KX8	64K	-40 Cel	TIN LEAD	QUAD	S-PQFP-G44	3	3.6 V	1.2 mm	10000 Write/Erase Cycles	33 MHz	10 mm	Not Qualified	524288 bit	3 V		e0	30	240	NOR TYPE	.01 Amp	10 mm	15 ns
XC18V512VQ44C0936	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	TQFP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL/SERIAL	SYNCHRONOUS		65536 words		3.3		8	FLATPACK, THIN PROFILE				.8 mm	85 Cel		64KX8	64K	-40 Cel	TIN LEAD	QUAD	S-PQFP-G44	3	3.6 V	1.2 mm			10 mm	Not Qualified	524288 bit	3 V		e0					10 mm	15 ns
XC18V512VQG44C0936	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	TQFP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL/SERIAL	SYNCHRONOUS		65536 words		3.3		8	FLATPACK, THIN PROFILE				.8 mm	85 Cel		64KX8	64K	-40 Cel	MATTE TIN	QUAD	S-PQFP-G44	3	3.6 V	1.2 mm			10 mm	Not Qualified	524288 bit	3 V		e3					10 mm	15 ns
XC18V02VQ44C0901	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	TQFP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL/SERIAL	SYNCHRONOUS		262144 words		3.3		8	FLATPACK, THIN PROFILE				.8 mm	85 Cel		256KX8	256K	-40 Cel	TIN LEAD	QUAD	S-PQFP-G44	3	3.6 V	1.2 mm			10 mm	Not Qualified	2097152 bit	3 V		e0					10 mm	20 ns
XC18V01VQG44I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	TQFP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL/SERIAL	SYNCHRONOUS		131072 words		3.3		8	FLATPACK, THIN PROFILE				.8 mm	85 Cel		128KX8	128K	-40 Cel	Matte Tin (Sn)	QUAD	S-PQFP-G44	3	3.6 V	1.2 mm			10 mm	Not Qualified	1048576 bit	3 V		e3	30	260			10 mm	15 ns
XQR17V16VQG44N	Xilinx	CONFIGURATION MEMORY	MILITARY	44	TQFP	SQUARE	50k Rad(Si)	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL/SERIAL	SYNCHRONOUS		2097152 words		3.3		8	FLATPACK, THIN PROFILE				.8 mm	125 Cel		2MX8	2M	-55 Cel	MATTE TIN	QUAD	S-PQFP-G44	3	3.6 V	1.2 mm			10 mm	Not Qualified	16777216 bit	3 V		e3	30	260			10 mm
XC18V256VQG44C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	44	TQFP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL/SERIAL	SYNCHRONOUS		32768 words		3.3		8	FLATPACK, THIN PROFILE				.8 mm	70 Cel		32KX8	32K	0 Cel	Matte Tin (Sn)	QUAD	S-PQFP-G44	3	3.6 V	1.2 mm			10 mm	Not Qualified	262144 bit	3 V		e3	30	260			10 mm	15 ns
XC18V256VQ44I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	TQFP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	32768 words		3.3	2.5/3.3,3.3	8	FLATPACK, THIN PROFILE	TQFP44,.47SQ,32	Flash Memories	10	.8 mm	85 Cel		32KX8	32K	-40 Cel	TIN LEAD	QUAD	S-PQFP-G44	3	3.6 V	1.2 mm	10000 Write/Erase Cycles	33 MHz	10 mm	Not Qualified	262144 bit	3 V		e0	30	240	NOR TYPE	.01 Amp	10 mm	15 ns
XC1804VQ44I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	TQFP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	30 mA	4194304 words		3.3	2.5/3.3,3.3	1	FLATPACK, THIN PROFILE	TQFP44,.47SQ,32	Flash Memories	10	.8 mm	85 Cel		4MX1	4M	-40 Cel	TIN LEAD	QUAD	S-PQFP-G44	3	3.6 V	1.2 mm	10000 Write/Erase Cycles	15 MHz	10 mm	Not Qualified	4194304 bit	3 V	SERIAL MODE ALSO AVAILABLE	e0	30	240	NOR TYPE	.0001 Amp	10 mm	45 ns
XC18V512VQ44C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	TQFP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	65536 words		3.3	2.5/3.3,3.3	8	FLATPACK, THIN PROFILE	TQFP44,.47SQ,32	Flash Memories	20	.8 mm	85 Cel		64KX8	64K	-40 Cel	TIN LEAD	QUAD	S-PQFP-G44	3	3.6 V	1.2 mm	20000 Write/Erase Cycles	33 MHz	10 mm	Not Qualified	524288 bit	3 V		e0	30	240	NOR TYPE	.01 Amp	10 mm	15 ns
XC1802VQ44I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	TQFP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	30 mA	2097152 words		3.3	2.5/3.3,3.3	1	FLATPACK, THIN PROFILE	TQFP44,.47SQ,32	Flash Memories	10	.8 mm	85 Cel		2MX1	2M	-40 Cel	TIN LEAD	QUAD	S-PQFP-G44	3	3.6 V	1.2 mm	10000 Write/Erase Cycles	15 MHz	10 mm	Not Qualified	2097152 bit	3 V	SERIAL MODE ALSO AVAILABLE	e0	30	240	NOR TYPE	.0001 Amp	10 mm	45 ns
XC1802VQ44C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	44	TQFP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	30 mA	2097152 words		3.3	2.5/3.3,3.3	1	FLATPACK, THIN PROFILE	TQFP44,.47SQ,32	Flash Memories	10	.8 mm	70 Cel		2MX1	2M	0 Cel	TIN LEAD	QUAD	S-PQFP-G44	3	3.6 V	1.2 mm	10000 Write/Erase Cycles	15 MHz	10 mm	Not Qualified	2097152 bit	3 V	SERIAL MODE ALSO AVAILABLE	e0	30	240	NOR TYPE	.0001 Amp	10 mm	45 ns
XC18V01VQ44C0799	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	TQFP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL/SERIAL	SYNCHRONOUS		131072 words		3.3		8	FLATPACK, THIN PROFILE				.8 mm	85 Cel		128KX8	128K	-40 Cel		QUAD	S-PQFP-G44		3.6 V	1.2 mm			10 mm	Not Qualified	1048576 bit	3 V							10 mm	15 ns
XC18V02VQ44C0936	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	TQFP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL/SERIAL	SYNCHRONOUS		262144 words		3.3		8	FLATPACK, THIN PROFILE				.8 mm	85 Cel		256KX8	256K	-40 Cel	TIN LEAD	QUAD	S-PQFP-G44	3	3.6 V	1.2 mm			10 mm	Not Qualified	2097152 bit	3 V		e0					10 mm	20 ns
XC18V02VQG44C0936	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	TQFP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL/SERIAL	SYNCHRONOUS		262144 words		3.3		8	FLATPACK, THIN PROFILE				.8 mm	85 Cel		256KX8	256K	-40 Cel	MATTE TIN	QUAD	S-PQFP-G44	3	3.6 V	1.2 mm			10 mm	Not Qualified	2097152 bit	3 V		e3					10 mm	20 ns
XC18V02VQG44C0901	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	TQFP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL/SERIAL	SYNCHRONOUS		262144 words		3.3		8	FLATPACK, THIN PROFILE				.8 mm	85 Cel		256KX8	256K	-40 Cel	MATTE TIN	QUAD	S-PQFP-G44	3	3.6 V	1.2 mm			10 mm	Not Qualified	2097152 bit	3 V		e3					10 mm	20 ns

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.