TSOP1 EEPROM 1,212

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
MT29F8G08ABACAWP-IT:C	Micron Technology	EEPROM CARD	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	256K	35 mA	1073741824 words	3.3	NO		8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20				.5 mm	85 Cel			1GX8	1G	-40 Cel	4K	YES		YES	DUAL			R-PDSO-G48		3.6 V	1.2 mm			12 mm				8589934592 bit	2.7 V		4K		NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE	.0001 Amp	18.4 mm		2.7	NO
AT28LV010-20TU-319	Microchip Technology	EEPROM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		15 mA	131072 words	3.3			8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.56,20			10	.5 mm	85 Cel			128KX8	128K	-40 Cel			MATTE TIN		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G32		3.465 V	1.2 mm	100000 Write/Erase Cycles		8 mm		10 ms		1048576 bit	3.135 V			e3				.00005 Amp	18.4 mm	200 ns	3
AT28LV010-20TU-T	Microchip Technology	EEPROM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		15000 mA	131072 words	3.3	YES		8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.56,20			10	.5 mm	85 Cel			128KX8	128K	-40 Cel		NO	MATTE TIN		DUAL	1		R-PDSO-G32		3.465 V	1.2 mm	100000 Write/Erase Cycles		8 mm		10 ms		1048576 bit	3.135 V		128	e3				.00005 Amp	18.4 mm	200 ns	3.3	YES
AT28LV010-20TU-235	Microchip Technology	EEPROM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		15 mA	131072 words	3.3			8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.56,20			10	.5 mm	85 Cel			128KX8	128K	-40 Cel			MATTE TIN		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G32		3.465 V	1.2 mm	100000 Write/Erase Cycles		8 mm		10 ms		1048576 bit	3.135 V			e3				.00005 Amp	18.4 mm	200 ns	3
AT28LV010-20TU-630	Microchip Technology	EEPROM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		15 mA	131072 words	3.3			8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.56,20			10	.5 mm	85 Cel			128KX8	128K	-40 Cel			MATTE TIN		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G32		3.465 V	1.2 mm	100000 Write/Erase Cycles		8 mm		10 ms		1048576 bit	3.135 V			e3				.00005 Amp	18.4 mm	200 ns	3
AT28LV010-20TUSL319	Microchip Technology	EEPROM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		15 mA	131072 words	3.3	YES	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		EEPROMs		.5 mm	85 Cel			128KX8	128K	-40 Cel		NO	MATTE TIN		DUAL			R-PDSO-G32		3.465 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified	10 ms		1048576 bit	3.135 V		128	e3				.00005 Amp	18.4 mm	200 ns	3	YES
CAT28C256T13I-15TE7	Onsemi	EEPROM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			32768 words	5			8	SMALL OUTLINE, THIN PROFILE					.55 mm	85 Cel			32KX8	32K	-40 Cel			TIN LEAD		DUAL			R-PDSO-G28	2	5.5 V	1.2 mm			8 mm	Not Qualified			262144 bit	4.5 V			e0					11.8 mm	150 ns	5
AT28C64B-15TU-T	Microchip Technology	EEPROM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			8192 words	5			8	SMALL OUTLINE, THIN PROFILE				10	.55 mm	85 Cel			8KX8	8K	-40 Cel			MATTE TIN		DUAL			R-PDSO-G28		5.5 V	1.2 mm	100000 Write/Erase Cycles		8 mm		10 ms		65536 bit	4.5 V	100K ENDURANCE CYCLES; 10 YEARS DATA RETENTION; AUTOMATIC PAGE WRITE		e3					11.8 mm	150 ns	5
CAT28C256T13I-15TE13	Onsemi	EEPROM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			32768 words	5			8	SMALL OUTLINE, THIN PROFILE					.55 mm	85 Cel			32KX8	32K	-40 Cel			TIN LEAD		DUAL			R-PDSO-G28	2	5.5 V	1.2 mm			8 mm	Not Qualified			262144 bit	4.5 V			e0					11.8 mm	150 ns	5
AT93C46D-TH-B	Microchip Technology	EEPROM	INDUSTRIAL	8	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		2 mA	64 words	5		2/5	16	SMALL OUTLINE, THIN PROFILE	TSSOP8,.25	8	EEPROMs	100	.65 mm	85 Cel		3-STATE	64X16	64	-40 Cel			NICKEL PALLADIUM GOLD		DUAL	1		R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	2 MHz	3 mm	Not Qualified	5 ms	MICROWIRE	1024 bit	4.5 V	CONFIGURABLE AS 128 X 8		e4	40	260		.000015 Amp	4.4 mm		5
TH58NVG4S0FTA20	Toshiba	EEPROM	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			2147483648 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel			2GX8	2G	0 Cel					DUAL			R-PDSO-G48		3.6 V	1.2 mm			12 mm				17179869184 bit	2.7 V								18.4 mm		3
CAT28C256T13I-15T	Onsemi	EEPROM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	32768 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22		EEPROMs		.55 mm	85 Cel			32KX8	32K	-40 Cel		NO			DUAL			R-PDSO-G28	1	5.5 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified	5 ms		262144 bit	4.5 V	10000 PROGRAM/ERASE CYCLES	64					.00015 Amp	11.8 mm	150 ns	5	YES
AT28C64B-15TU	Microchip Technology	EEPROM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		40 mA	8192 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22		EEPROMs	10	.55 mm	85 Cel			8KX8	8K	-40 Cel		NO	MATTE TIN		DUAL			R-PDSO-G28		5.5 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified	10 ms		65536 bit	4.5 V	100K ENDURANCE CYCLES; 10 YEARS DATA RETENTION; AUTOMATIC PAGE WRITE	64	e3				.0001 Amp	11.8 mm	150 ns	5	YES
AT28HC256E-90TU	Microchip Technology	EEPROM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		80 mA	32768 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22		EEPROMs		.55 mm	85 Cel			32KX8	32K	-40 Cel		NO	MATTE TIN		DUAL			R-PDSO-G28	3	5.5 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified	10 ms		262144 bit	4.5 V		64	e3				.0003 Amp	11.8 mm	90 ns	5	YES
CAT28C64BH13-12	Rochester Electronics	EEPROM	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			8192 words	5			8	SMALL OUTLINE, THIN PROFILE					.55 mm	70 Cel			8KX8	8K	0 Cel			MATTE TIN		DUAL			R-PDSO-G28		5.5 V	1.2 mm			8 mm	Not Qualified	5 ms		65536 bit	4.5 V			e3					11.8 mm	120 ns	5
CAT28C64BH13-90	Rochester Electronics	EEPROM	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			8192 words	5			8	SMALL OUTLINE, THIN PROFILE					.55 mm	70 Cel			8KX8	8K	0 Cel					DUAL			R-PDSO-G28		5.5 V	1.2 mm			8 mm	Not Qualified	5 ms		65536 bit	4.5 V				NOT SPECIFIED	NOT SPECIFIED			11.8 mm	90 ns	5
CAT28C64BH1312	Onsemi	EEPROM	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	8192 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22		EEPROMs		.55 mm	70 Cel			8KX8	8K	0 Cel		NO	Matte Tin (Sn)		DUAL			R-PDSO-G28		5.5 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified	5 ms		65536 bit	4.5 V		32	e3				.0001 Amp	11.8 mm	120 ns	5	YES
CAT28C64BH1390	Onsemi	EEPROM	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	8192 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22		EEPROMs		.55 mm	70 Cel			8KX8	8K	0 Cel		NO	Matte Tin (Sn)		DUAL			R-PDSO-G28		5.5 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified	5 ms		65536 bit	4.5 V		32	e3				.0001 Amp	11.8 mm	90 ns	5	YES
AT28C010-12TU	Microchip Technology	EEPROM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		40 mA	131072 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		EEPROMs		.5 mm	85 Cel			128KX8	128K	-40 Cel		NO	MATTE TIN		DUAL			R-PDSO-G32	3	5.5 V	1.2 mm	10000 Write/Erase Cycles		8 mm	Not Qualified	10 ms		1048576 bit	4.5 V		128	e3				.0002 Amp	18.4 mm	120 ns	5	YES
AT28BV256-20TI	Atmel	EEPROM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		15 mA	32768 words	3	YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22		EEPROMs		.55 mm	85 Cel			32KX8	32K	-40 Cel		NO	TIN LEAD		DUAL			R-PDSO-G28	3	3.6 V	1.2 mm	10000 Write/Erase Cycles		8 mm	Not Qualified	10 ms		262144 bit	2.7 V	AUTOMATIC WRITE	64	e0		240		.00005 Amp	11.8 mm	200 ns	3	YES
AT28BV256-20TU	Microchip Technology	EEPROM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		15 mA	32768 words	3	YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22		EEPROMs		.55 mm	85 Cel			32KX8	32K	-40 Cel		NO	MATTE TIN		DUAL			R-PDSO-G28	3	3.6 V	1.2 mm	10000 Write/Erase Cycles		8 mm	Not Qualified	10 ms		262144 bit	2.7 V		64	e3				.00005 Amp	11.8 mm	200 ns	3	YES
CAT28C256T13I-15	Catalyst Semiconductor	EEPROM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	32768 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22		EEPROMs		.55 mm	85 Cel			32KX8	32K	-40 Cel		NO	TIN LEAD		DUAL			R-PDSO-G28	2	5.5 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified	5 ms		262144 bit	4.5 V		64	e0				.00015 Amp	11.8 mm	150 ns	5	YES
CAT28C256T13I15	Onsemi	EEPROM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	32768 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22		EEPROMs		.55 mm	85 Cel			32KX8	32K	-40 Cel		NO	TIN LEAD		DUAL			R-PDSO-G28	2	5.5 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified	5 ms		262144 bit	4.5 V		64	e0				.00015 Amp	11.8 mm	150 ns	5	YES
CAT28C64BH13I12	Onsemi	EEPROM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	8192 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22		EEPROMs		.55 mm	85 Cel			8KX8	8K	-40 Cel		NO	Matte Tin (Sn)		DUAL			R-PDSO-G28		5.5 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified	5 ms		65536 bit	4.5 V		32	e3				.0001 Amp	11.8 mm	120 ns	5	YES
CAT28C64BH13I-12	Rochester Electronics	EEPROM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			8192 words	5			8	SMALL OUTLINE, THIN PROFILE					.55 mm	85 Cel			8KX8	8K	-40 Cel			MATTE TIN		DUAL			R-PDSO-G28	2	5.5 V	1.2 mm			8 mm	Not Qualified	5 ms		65536 bit	4.5 V			e3					11.8 mm	120 ns	5
TH58NVG5S0FTA20	Toshiba	EEPROM	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			4294967296 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel			4GX8	4G	0 Cel					DUAL			R-PDSO-G48		3.6 V	1.2 mm			12 mm				34359738368 bit	2.7 V								18.4 mm		3
TC58DVG02A1FT00	Toshiba	EEPROM	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	ASYNCHRONOUS	16K	30 mA	134217728 words	3.3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	70 Cel			128MX8	128M	0 Cel	8K	YES		YES	DUAL			R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified			1073741824 bit	2.7 V		512				NAND TYPE	.00005 Amp	18.4 mm	45 ns	3	NO
AT28C010E-15TI	Atmel	EEPROM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		40 mA	131072 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		EEPROMs		.5 mm	85 Cel		3-STATE	128KX8	128K	-40 Cel		NO	TIN LEAD		DUAL			R-PDSO-G32	3	5.5 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified	10 ms		1048576 bit	4.5 V	AUTOMATIC WRITE	128	e0		240		.0002 Amp	18.4 mm	150 ns	5	YES
TC58DVM72A1TG00	Toshiba	EEPROM	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	ASYNCHRONOUS			16777216 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel			16MX8	16M	-40 Cel					DUAL			R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified			134217728 bit	2.7 V								18.4 mm		3
AT28C16-25TC	Atmel	EEPROM	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	2048 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22		EEPROMs	10	.55 mm	70 Cel		3-STATE	2KX8	2K	0 Cel		NO	TIN LEAD	YES	DUAL			R-PDSO-G28	3	5.5 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified			16384 bit	4.5 V	AUTOMATIC WRITE; 100K ENDURANCE WRITE CYCLES; DATA RETENTION > 10 YEARS		e0		240		.0001 Amp	11.8 mm	250 ns	5	YES
AT28C256F-20TI	Atmel	EEPROM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	MIL-STD-883	GULL WING	PARALLEL	ASYNCHRONOUS		50 mA	32768 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22		EEPROMs		.55 mm	85 Cel		3-STATE	32KX8	32K	-40 Cel		NO	TIN LEAD		DUAL			R-PDSO-G28	3	5.5 V	1.2 mm	10000 Write/Erase Cycles		8 mm	Not Qualified	3 ms		262144 bit	4.5 V	AUTOMATIC WRITE	64	e0		240		.0002 Amp	11.8 mm	200 ns	5	YES
AT28LV64B-20TC	Atmel	EEPROM	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		15 mA	8192 words	3.3	YES	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22		EEPROMs		.55 mm	70 Cel		3-STATE	8KX8	8K	0 Cel		NO	TIN LEAD		DUAL			R-PDSO-G28	3	3.63 V	1.2 mm	10000 Write/Erase Cycles		8 mm	Not Qualified	10 ms		65536 bit	2.97 V	AUTOMATIC WRITE	64	e0		240		.00002 Amp	11.8 mm	200 ns	3	YES
TC58256FT	Toshiba	EEPROM	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	16K	30 mA	33554432 words	3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.71,20		Flash Memories		.5 mm	70 Cel			32MX8	32M	0 Cel	2K	YES		YES	DUAL			R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified			268435456 bit	3 V		512				NAND TYPE	.0001 Amp	18.4 mm	35 ns	3	NO
TC58DVM72A1FT00	Toshiba	EEPROM	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	ASYNCHRONOUS	16K	30 mA	16777216 words	3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	70 Cel			16MX8	16M	0 Cel	1K	YES	Tin/Lead (Sn/Pb)	YES	DUAL			R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified			134217728 bit	2.7 V		512	e0			NAND TYPE	.00005 Amp	18.4 mm	45 ns	3	NO
AT25640B-XPDGV-T	Microchip Technology	EEPROM	AUTOMOTIVE	8	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		7 mA	8192 words	5			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25			100	.65 mm	125 Cel	NO	3-STATE	8KX8	8K	-40 Cel					DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.2 mm	1000000 Write/Erase Cycles	5 MHz	3 mm		5 ms	SPI	65536 bit	2.5 V							.000009 Amp	4.4 mm		5
CAT28C65BFT14I-12TE13	Onsemi	EEPROM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			8192 words	5			8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel			8KX8	8K	-40 Cel			TIN LEAD		DUAL			R-PDSO-G32	2A	5.5 V	1.2 mm			8 mm	Not Qualified			65536 bit	4.5 V			e0					12.4 mm	120 ns	5
CAT28LV64H13A25T	Onsemi	EEPROM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		8 mA	8192 words	3.3	YES	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22		EEPROMs		.55 mm	105 Cel			8KX8	8K	-40 Cel		NO			DUAL			R-PDSO-G28		3.6 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified	5 ms		65536 bit	3 V		32		NOT SPECIFIED	NOT SPECIFIED		.0001 Amp	11.8 mm	250 ns	3	YES
CAT28C256HT14I-15TE13	Onsemi	EEPROM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			32768 words	5			8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel			32KX8	32K	-40 Cel			TIN LEAD		DUAL			R-PDSO-G32	2A	5.5 V	1.2 mm			8 mm	Not Qualified			262144 bit	4.5 V			e0					12.4 mm	150 ns	5
CAT28C256H13I12T	Onsemi	EEPROM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	32768 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22		EEPROMs		.55 mm	85 Cel			32KX8	32K	-40 Cel		NO			DUAL			R-PDSO-G28		5.5 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified	5 ms		262144 bit	4.5 V		64					.00015 Amp	11.8 mm	120 ns	5	YES
CAT28LV256T13I-20T	Onsemi	EEPROM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		15 mA	32768 words	3.3	YES	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22		EEPROMs		.55 mm	85 Cel			32KX8	32K	-40 Cel		NO	TIN LEAD		DUAL			R-PDSO-G28	2	3.6 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified	10 ms		262144 bit	3 V		64	e0				.00015 Amp	11.8 mm	200 ns	3	YES
CAT28LV65HT-25TE7	Onsemi	EEPROM	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			8192 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel			8KX8	8K	0 Cel			TIN LEAD		DUAL			R-PDSO-G32	2A	3.6 V	1.2 mm			8 mm	Not Qualified			65536 bit	3 V			e0					18.4 mm	250 ns	3
CAT28C65BHT-12TE13	Onsemi	EEPROM	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			8192 words	5			8	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel			8KX8	8K	0 Cel			TIN LEAD		DUAL			R-PDSO-G32	2A	5.5 V	1.2 mm			8 mm	Not Qualified			65536 bit	4.5 V			e0					18.4 mm	120 ns	5
CAT28LV256HT14I-25TE7	Onsemi	EEPROM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			32768 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel			32KX8	32K	-40 Cel			TIN LEAD		DUAL			R-PDSO-G32	2A	3.6 V	1.2 mm			8 mm	Not Qualified			262144 bit	3 V			e0					12.4 mm	250 ns	3
CAT28LV256H14I-25TE13	Onsemi	EEPROM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			32768 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel			32KX8	32K	-40 Cel					DUAL			R-PDSO-G32		3.6 V	1.2 mm			8 mm	Not Qualified			262144 bit	3 V								12.4 mm	250 ns	3
CAT28C512TI-15	Onsemi	EEPROM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		50 mA	65536 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		EEPROMs		.5 mm	85 Cel			64KX8	64K	-40 Cel		NO			DUAL			R-PDSO-G32	1	5.5 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified	5 ms		524288 bit	4.5 V		128					.0002 Amp	18.4 mm	150 ns	5	YES
CAT28C256HT14I-25TE13	Onsemi	EEPROM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			32768 words	5			8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel			32KX8	32K	-40 Cel			TIN LEAD		DUAL			R-PDSO-G32	2A	5.5 V	1.2 mm			8 mm	Not Qualified			262144 bit	4.5 V			e0					12.4 mm	250 ns	5
CAT28C65BHT13I-12TE13	Onsemi	EEPROM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			8192 words	5			8	SMALL OUTLINE, THIN PROFILE					.55 mm	85 Cel			8KX8	8K	-40 Cel			TIN LEAD		DUAL			R-PDSO-G28	2	5.5 V	1.2 mm			8 mm	Not Qualified			65536 bit	4.5 V			e0					11.8 mm	120 ns	5
CAT28LV65HT14-30TE7	Onsemi	EEPROM	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			8192 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel			8KX8	8K	0 Cel			TIN LEAD		DUAL			R-PDSO-G32	2A	3.6 V	1.2 mm			8 mm	Not Qualified			65536 bit	3 V			e0					12.4 mm	300 ns	3

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.