TSOP2 EEPROM 86

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
XC17128ELVOG8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			131072 words		3.3			1	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel		128KX1	128K	0 Cel			MATTE TIN		DUAL	R-PDSO-G8	3	3.6 V	1.1938 mm		3.937 mm	Not Qualified	131072 bit	3 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS		e3	30	260			4.9276 mm
XC17S150AVO8I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		5 mA	1040096 words	COMMON	3.3		3.3	1	SMALL OUTLINE, THIN PROFILE	SOP8,.25	OTP ROMs	1.27 mm	85 Cel	3-STATE	1040096X1	1040096	-40 Cel			Tin/Lead (Sn85Pb15)		DUAL	R-PDSO-G8	3	3.6 V	1.2 mm		3.9 mm	Not Qualified	1040096 bit	3 V			e0	30	225		.00005 Amp	4.9 mm
XC17256LVO8I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		5 mA	262144 words	COMMON	5		3.3	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs	1.27 mm	85 Cel	3-STATE	256KX1	256K	-40 Cel			TIN LEAD		DUAL	R-PDSO-G8	3	5.5 V	1.1938 mm	10 MHz	3.937 mm	Not Qualified	262144 bit	4.5 V			e0	30	225		.00005 Amp	4.9276 mm
XC17S15AVO8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		5 mA	197696 words	COMMON	3.3		3.3	1	SMALL OUTLINE, THIN PROFILE	SOP8,.25	OTP ROMs	1.27 mm	70 Cel	3-STATE	197696X1	197696	0 Cel			Tin/Lead (Sn85Pb15)		DUAL	R-PDSO-G8	3	3.6 V	1.2 mm		3.9 mm	Not Qualified	197696 bit	3 V			e0	30	225		.00005 Amp	4.9 mm
XC1765ELVO8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		5 mA	65536 words	COMMON	3.3		3.3	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs	1.27 mm	70 Cel	3-STATE	64KX1	64K	0 Cel			Tin/Lead (Sn85Pb15)		DUAL	R-PDSO-G8	3	3.6 V	1.1938 mm	2.5 MHz	3.937 mm	Not Qualified	65536 bit	3 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS		e0	30	225		.00005 Amp	4.9276 mm
XC17S30AVOG8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			336768 words		3.3			1	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel		336768X1	336768	0 Cel			Matte Tin (Sn)		DUAL	R-PDSO-G8	3	3.6 V	1.2 mm		3.9 mm	Not Qualified	336768 bit	3 V			e3	30	260			4.9 mm
XC17S30AVO8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		5 mA	336768 words	COMMON	3.3		3.3	1	SMALL OUTLINE, THIN PROFILE	SOP8,.25	OTP ROMs	1.27 mm	70 Cel	3-STATE	336768X1	336768	0 Cel			Tin/Lead (Sn85Pb15)		DUAL	R-PDSO-G8	3	3.6 V	1.2 mm		3.9 mm	Not Qualified	336768 bit	3 V			e0	30	225		.00005 Amp	4.9 mm
XC17256ELVOG8I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			262144 words		3.3			1	SMALL OUTLINE, THIN PROFILE			1.27 mm	85 Cel		256KX1	256K	-40 Cel			Matte Tin (Sn)		DUAL	R-PDSO-G8	3	3.6 V	1.1938 mm		3.937 mm	Not Qualified	262144 bit	3 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS		e3	30	260			4.9276 mm
XC17S15AVOG8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		15 mA	197696 words	COMMON	3.3		3.3	1	SMALL OUTLINE, THIN PROFILE	SOP8,.25	OTP ROMs	1.27 mm	70 Cel	3-STATE	197696X1	197696	0 Cel			Matte Tin (Sn)		DUAL	R-PDSO-G8	3	3.6 V	1.2 mm		3.9 mm	Not Qualified	197696 bit	3 V			e3	30	260		.001 Amp	4.9 mm
XC1718LVO8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		5 mA	18144 words	COMMON	5		3.3	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs	1.27 mm	70 Cel	3-STATE	18144X1	18144	0 Cel			TIN LEAD		DUAL	R-PDSO-G8	3	5.25 V	1.1938 mm	2.5 MHz	3.937 mm	Not Qualified	18144 bit	4.75 V			e0	30	225		.0005 Amp	4.9276 mm
XC17S30AVOG8I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			336768 words		3.3			1	SMALL OUTLINE, THIN PROFILE			1.27 mm	85 Cel		336768X1	336768	-40 Cel			Matte Tin (Sn)		DUAL	R-PDSO-G8	3	3.6 V	1.2 mm		3.9 mm	Not Qualified	336768 bit	3 V			e3	30	260			4.9 mm
XC17S100AVOG8I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			781216 words		3.3			1	SMALL OUTLINE, THIN PROFILE			1.27 mm	85 Cel		781216X1	781216	-40 Cel			Matte Tin (Sn)		DUAL	R-PDSO-G8	3	3.6 V	1.2 mm		3.9 mm	Not Qualified	781216 bit	3 V			e3	30	260			4.9 mm
XC17S150AVO8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		5 mA	1040096 words	COMMON	3.3		3.3	1	SMALL OUTLINE, THIN PROFILE	SOP8,.25	OTP ROMs	1.27 mm	70 Cel	3-STATE	1040096X1	1040096	0 Cel			Tin/Lead (Sn85Pb15)		DUAL	R-PDSO-G8	3	3.6 V	1.2 mm		3.9 mm	Not Qualified	1040096 bit	3 V			e0	30	225		.00005 Amp	4.9 mm
XC1765EVO8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		10 mA	65536 words	COMMON	5		5	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs	1.27 mm	70 Cel	3-STATE	64KX1	64K	0 Cel			Tin/Lead (Sn85Pb15)		DUAL	R-PDSO-G8	3	5.25 V	1.1938 mm	10 MHz	3.937 mm	Not Qualified	65536 bit	4.75 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS		e0	30	225		.00005 Amp	4.9276 mm
XC17S30AVO8I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		5 mA	336768 words	COMMON	3.3		3.3	1	SMALL OUTLINE, THIN PROFILE	SOP8,.25	OTP ROMs	1.27 mm	85 Cel	3-STATE	336768X1	336768	-40 Cel			Tin/Lead (Sn85Pb15)		DUAL	R-PDSO-G8	3	3.6 V	1.2 mm		3.9 mm	Not Qualified	336768 bit	3 V			e0	30	225		.00005 Amp	4.9 mm
XC17256EVOG8I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			262144 words		5			1	SMALL OUTLINE, THIN PROFILE			1.27 mm	85 Cel		256KX1	256K	-40 Cel			Matte Tin (Sn)		DUAL	R-PDSO-G8	3	5.5 V	1.1938 mm		3.937 mm	Not Qualified	262144 bit	4.5 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS		e3	30	260			4.9276 mm
XC17S15AVO8I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		5 mA	197696 words	COMMON	3.3		3.3	1	SMALL OUTLINE, THIN PROFILE	SOP8,.25	OTP ROMs	1.27 mm	85 Cel	3-STATE	197696X1	197696	-40 Cel			Tin/Lead (Sn85Pb15)		DUAL	R-PDSO-G8	3	3.6 V	1.2 mm		3.9 mm	Not Qualified	197696 bit	3 V			e0	30	225		.00005 Amp	4.9 mm
XC1736EVOG8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		10 mA	36288 words	COMMON	5		5	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs	1.27 mm	70 Cel	3-STATE	36288X1	36288	0 Cel			Matte Tin (Sn)		DUAL	R-PDSO-G8	3	5.25 V	1.1938 mm	10 MHz	3.937 mm	Not Qualified	36288 bit	4.75 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS		e3	30	260		.00005 Amp	4.9276 mm
XC17128EVOG8I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			131072 words		5			1	SMALL OUTLINE, THIN PROFILE			1.27 mm	85 Cel		128KX1	128K	-40 Cel			Matte Tin (Sn)		DUAL	R-PDSO-G8	3	5.5 V	1.1938 mm		3.937 mm	Not Qualified	131072 bit	4.5 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS		e3	30	260			4.9276 mm
XC17S200AVO8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		15 mA	1335840 words	COMMON	3.3		3.3	1	SMALL OUTLINE, THIN PROFILE	SOP8,.25	OTP ROMs	1.27 mm	70 Cel	3-STATE	1335840X1	1335840	0 Cel			Tin/Lead (Sn85Pb15)		DUAL	R-PDSO-G8	3	3.6 V	1.2 mm		3.9 mm	Not Qualified	1335840 bit	3 V			e0	30	225		.001 Amp	4.9 mm
XC17128ELVOG8I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			131072 words		3.3			1	SMALL OUTLINE, THIN PROFILE			1.27 mm	85 Cel		128KX1	128K	-40 Cel			MATTE TIN		DUAL	R-PDSO-G8	3	3.6 V	1.1938 mm		3.937 mm	Not Qualified	131072 bit	3 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS		e3	30	260			4.9276 mm
XC17S15AVOG8I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			197696 words		3.3			1	SMALL OUTLINE, THIN PROFILE			1.27 mm	85 Cel		197696X1	197696	-40 Cel			Matte Tin (Sn)		DUAL	R-PDSO-G8	3	3.6 V	1.2 mm		3.9 mm	Not Qualified	197696 bit	3 V			e3	30	260			4.9 mm
XC17256EVO8I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		10 mA	262144 words	COMMON	5		5	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs	1.27 mm	85 Cel	3-STATE	256KX1	256K	-40 Cel			Tin/Lead (Sn85Pb15)		DUAL	R-PDSO-G8	3	5.5 V	1.1938 mm	15 MHz	3.937 mm	Not Qualified	262144 bit	4.5 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS		e0	30	225		.00005 Amp	4.9276 mm
XC17128ELVO8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		5 mA	131072 words	COMMON	3.3		3.3	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs	1.27 mm	70 Cel	3-STATE	128KX1	128K	0 Cel			Tin/Lead (Sn85Pb15)		DUAL	R-PDSO-G8	3	3.6 V	1.1938 mm	15 MHz	3.937 mm	Not Qualified	131072 bit	3 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS		e0	30	225		.00005 Amp	4.9276 mm
XC17S150AVOG8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			1040096 words		3.3			1	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel		1040096X1	1040096	0 Cel			Matte Tin (Sn)		DUAL	R-PDSO-G8	3	3.6 V	1.2 mm		3.9 mm	Not Qualified	1040096 bit	3 V			e3	30	260			4.9 mm
XC17S200AVOG8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		15 mA	1335840 words	COMMON	3.3		3.3	1	SMALL OUTLINE, THIN PROFILE	SOP8,.25	OTP ROMs	1.27 mm	70 Cel	3-STATE	1335840X1	1335840	0 Cel			Matte Tin (Sn)		DUAL	R-PDSO-G8	3	3.6 V	1.2 mm		3.9 mm	Not Qualified	1335840 bit	3 V			e3	30	260		.001 Amp	4.9 mm
TC58V64AFT	Toshiba	EEPROM	COMMERCIAL	40	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	8K	30 mA	8388608 words		3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.36,32	Flash Memories	.8 mm	70 Cel		8MX8	8M	0 Cel	1K	YES		YES	DUAL	R-PDSO-G40		3.6 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	3 V		512				NAND TYPE	.0001 Amp	18.41 mm	35 ns	3	NO
TC58V32FT	Toshiba	EEPROM	COMMERCIAL	40	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS			4194304 words		3.3			8	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel	3-STATE	4MX8	4M	0 Cel					DUAL	R-PDSO-G40		3.6 V	1.2 mm		10.16 mm	Not Qualified	33554432 bit	3 V								18.41 mm	35 ns	3
TC58V32AFT	Toshiba	EEPROM	COMMERCIAL	40	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K	30 mA	4194304 words		5	NO	3.3,3.3/5	8	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	Flash Memories	.8 mm	70 Cel		4MX8	4M	0 Cel	512	YES	Tin/Lead (Sn/Pb)	YES	DUAL	R-PDSO-G40		5.5 V	1.2 mm		10.16 mm	Not Qualified	33554432 bit	4.5 V		512	e0			NAND TYPE	.0001 Amp	18.41 mm	35 ns	3	NO
TC58V64FT	Toshiba	EEPROM	COMMERCIAL	40	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			8388608 words		3.3			8	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel		8MX8	8M	0 Cel					DUAL	R-PDSO-G40		3.6 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	3 V								18.41 mm	35 ns	3
TH58V128FT	Toshiba	EEPROM	COMMERCIAL	40	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K	30 mA	16777216 words		3.3	NO	3.3,3.3/5	8	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	Flash Memories	.8 mm	70 Cel		16MX8	16M	0 Cel	1K	YES		YES	DUAL	R-PDSO-G40		3.6 V	1.2 mm		10.16 mm	Not Qualified	134217728 bit	3 V		512				NAND TYPE	.0001 Amp	18.41 mm	35 ns	3	NO
TC5832FT	Toshiba	EEPROM	COMMERCIAL	40	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			4194304 words		5			8	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel	3-STATE	4MX8	4M	0 Cel					DUAL	R-PDSO-G40		5.5 V	1.2 mm		10.16 mm	Not Qualified	33554432 bit	4.5 V								18.41 mm		5
TC5816AFTI	Toshiba	EEPROM	INDUSTRIAL	40	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS			2097152 words		5			8	SMALL OUTLINE, THIN PROFILE			.8 mm	85 Cel	3-STATE	2MX8	2M	-40 Cel					DUAL	R-PDSO-G40		5.5 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	4.5 V								18.41 mm	50 ns	5
TC5816FT	Toshiba	EEPROM	COMMERCIAL	40	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			2097152 words		5			8	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel	3-STATE	2MX8	2M	0 Cel			TIN LEAD		DUAL	R-PDSO-G40		5.25 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	4.75 V	ORGANIZATION : MEMORY CELL ARRAY = 264X8KX8		e0					18.41 mm		5
TC58V64BFT	Toshiba	EEPROM	COMMERCIAL	40	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	ASYNCHRONOUS	8K	30 mA	8388608 words		3.3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32	Flash Memories	.8 mm	70 Cel		8MX8	8M	0 Cel	1K	YES	Tin/Lead (Sn/Pb)	YES	DUAL	R-PDSO-G40		3.6 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	2.7 V		512	e0			NAND TYPE	.0001 Amp	18.41 mm	35 ns	3	NO
TC58V64AFTI	Toshiba	EEPROM	INDUSTRIAL	40	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	ASYNCHRONOUS			8388608 words		3.3			8	SMALL OUTLINE, THIN PROFILE			.8 mm	85 Cel		8MX8	8M	-40 Cel			TIN LEAD		DUAL	R-PDSO-G40		3.6 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	3 V			e0					18.41 mm		3
TC584000FT	Toshiba	EEPROM	COMMERCIAL	40	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words		5			8	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel		512KX8	512K	0 Cel			TIN LEAD		DUAL	R-PDSO-G40		5.25 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	4.75 V	BULK ERASE; BLOCK ERASE		e0					18.41 mm	15000 ns	5
TC58V64BFTI	Toshiba	EEPROM	INDUSTRIAL	40	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	ASYNCHRONOUS			8388608 words		3.3			8	SMALL OUTLINE, THIN PROFILE			.8 mm	85 Cel		8MX8	8M	-40 Cel			TIN LEAD		DUAL	R-PDSO-G40		3.6 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	2.7 V			e0					18.4 mm		3

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.