VFBGA EEPROM 1,420

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
M24128X-FCU6/TF	STMicroelectronics	EEPROM	INDUSTRIAL	4	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		2.5 mA	16384 words	2.5			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	85 Cel			16KX8	16K	-40 Cel					BOTTOM		S-PBGA-B4		5.5 V	.3 mm		1 MHz	.851 mm		5 ms	I2C	131072 bit	1.7 V	TERM PITCH-MAX							.851 mm
M24C32-XCU6TP/KF	STMicroelectronics	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		5 mA	4096 words				8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	85 Cel			4KX8	4K	-40 Cel					BOTTOM		R-PBGA-B4		5.5 V	.32 mm		1 MHz	.674 mm		10 ms	I2C	32768 bit	1.6 V								.795 mm
DS2431X+	Maxim Integrated	EEPROM	INDUSTRIAL	6	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	ASYNCHRONOUS			1024 words	3.3		3/5	1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA6,2X3,40/20	EEPROMs	40	.5 mm	85 Cel	NO	OPEN-DRAIN	1KX1	1K	-40 Cel		NO	Matte Tin (Sn)		BOTTOM	HARDWARE	S-PBGA-B6	1	5.25 V	.98 mm	50000 Write/Erase Cycles		1.68 mm	Not Qualified		1-WIRE	1024 bit	2.8 V	MEMORY ORGANIZED AS FOUR PAGES OF 256 BITS		e3	30	260			1.68 mm			NO
DS2430AX	Maxim Integrated	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	ASYNCHRONOUS			256 words	5		3/5	1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA4(UNSPEC)	EEPROMs			85 Cel			256X1	256	-40 Cel			TIN LEAD		BOTTOM		R-PBGA-B4	1	6 V	.596 mm	100000 Write/Erase Cycles		1.73 mm	Not Qualified		1-WIRE	256 bit	2.8 V	MICROLAN COMPATIBLE		e0					2.39 mm
DS2432X-S	Maxim Integrated	EEPROM	INDUSTRIAL	6	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	ASYNCHRONOUS			1024 words	5		3/5	1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA8,2X4,40/20	EEPROMs	10	.5 mm	85 Cel			1KX1	1K	-40 Cel			TIN LEAD		BOTTOM		R-PBGA-B6		5.25 V	.67 mm	50000 Write/Erase Cycles		1.75 mm	Not Qualified		1-WIRE	1024 bit	2.8 V			e0					1.98 mm
DS2431X	Maxim Integrated	EEPROM	INDUSTRIAL	6	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	ASYNCHRONOUS			1024 words	3.3		3/5	1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA6,2X3,40/20	EEPROMs	40	.5 mm	85 Cel			1KX1	1K	-40 Cel			TIN LEAD		BOTTOM		S-PBGA-B6		5.25 V	.77 mm	50000 Write/Erase Cycles		1.68 mm	Not Qualified		1-WIRE	1024 bit	2.8 V	MEMORY ORGANIZED AS FOUR PAGES OF 256 BITS		e0					1.68 mm
DS2432X+U	Maxim Integrated	EEPROM	INDUSTRIAL	8	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS			1024 words	5			1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	85 Cel			1KX1	1K	-40 Cel			Tin/Silver/Copper/Nickel (Sn/Ag/Cu/Ni)		BOTTOM		R-PBGA-B8	1	5.25 V	.69 mm			1.8 mm			1-WIRE	1024 bit	2.8 V			e2	30	260			2.52 mm
DS2432X+	Maxim Integrated	EEPROM	INDUSTRIAL	8	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	ASYNCHRONOUS			1024 words	5			1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	85 Cel			1KX1	1K	-40 Cel					BOTTOM		R-PBGA-B8		5.25 V	.72 mm			1.8 mm	Not Qualified		1-WIRE	1024 bit	2.8 V				NOT SPECIFIED	NOT SPECIFIED			2.52 mm
DS28E01X-100	Maxim Integrated	EEPROM	INDUSTRIAL	6	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	ASYNCHRONOUS			1024 words				1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	85 Cel			1KX1	1K	-40 Cel					BOTTOM		R-PBGA-B6		5.25 V	.67 mm			1.75 mm	Not Qualified		1-WIRE	1024 bit	2.8 V								1.98 mm
DS2432X	Maxim Integrated	EEPROM	INDUSTRIAL	6	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	ASYNCHRONOUS			1024 words	5		3/5	1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA8,2X4,40/20	EEPROMs	10	.5 mm	85 Cel			1KX1	1K	-40 Cel			TIN LEAD		BOTTOM		R-PBGA-B6		5.25 V	.67 mm	50000 Write/Erase Cycles		1.75 mm	Not Qualified		1-WIRE	1024 bit	2.8 V			e0					1.98 mm
DS2432X-S+	Maxim Integrated	EEPROM	INDUSTRIAL	8	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	ASYNCHRONOUS			1024 words	5			1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	85 Cel			1KX1	1K	-40 Cel			TIN SILVER COPPER NICKEL		BOTTOM		R-PBGA-B8	1	5.25 V	.72 mm			1.8 mm	Not Qualified		1-WIRE	1024 bit	2.8 V			e2	30	260			2.52 mm
DS2430AX-S	Maxim Integrated	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	ASYNCHRONOUS			256 words	5		3/5	1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA4(UNSPEC)	EEPROMs			85 Cel			256X1	256	-40 Cel			TIN LEAD		BOTTOM		R-PBGA-B4	1	6 V	.596 mm	100000 Write/Erase Cycles		1.73 mm	Not Qualified		1-WIRE	256 bit	2.8 V	MICROLAN COMPATIBLE		e0					2.39 mm
TH58NVG3S0HBAI6	Toshiba	EEPROM	INDUSTRIAL	67	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			1073741824 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	85 Cel			1GX8	1G	-40 Cel					BOTTOM		R-PBGA-B67		3.6 V	1 mm			6.5 mm				8589934592 bit	2.7 V								8 mm		3
TC58NVG1S3EBAI5	Toshiba	EEPROM	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	ASYNCHRONOUS	128K	30 mA	268435456 words	3	NO	3/3.3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32	Flash Memories		.8 mm	85 Cel			256MX8	256M	-40 Cel	2K	YES		YES	BOTTOM		R-PBGA-B63		3.6 V	1 mm			10 mm	Not Qualified			2147483648 bit	2.7 V		2K				NAND TYPE	.00005 Amp	13 mm	25 ns	3	NO
TC58NVG1S3EBAI4	Toshiba	EEPROM	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	30 mA	268435456 words	3.3	NO	3/3.3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32	Flash Memories		.8 mm	85 Cel			256MX8	256M	-40 Cel	2K	YES		YES	BOTTOM		R-PBGA-B63		3.6 V	1 mm			9 mm	Not Qualified			2147483648 bit	2.7 V		2K				NAND TYPE	.00005 Amp	11 mm	25 ns	3	NO
TC58NVG2S3EBAI5	Toshiba	EEPROM	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	ASYNCHRONOUS	128K	30 mA	536870912 words	3	NO	3/3.3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32	Flash Memories		.8 mm	85 Cel			512MX8	512M	-40 Cel	4K	YES		YES	BOTTOM		R-PBGA-B63		3.6 V	1 mm			10 mm	Not Qualified			4294967296 bit	2.7 V		2K				NAND TYPE	.00005 Amp	13 mm	25 ns	3	NO
TC58DVG02D5BAI6	Toshiba	EEPROM	INDUSTRIAL	67	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			134217728 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	85 Cel			128MX8	128M	-40 Cel					BOTTOM		R-PBGA-B67		3.6 V	1 mm			6.5 mm				1073741824 bit	2.7 V								8 mm		3
TH58NYG4S0FBAID	Toshiba	EEPROM	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			2147483648 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	85 Cel			2GX8	2G	-40 Cel					BOTTOM		R-PBGA-B63		1.95 V	1 mm			10 mm				17179869184 bit	1.7 V								11 mm		3
TC58NVM9S3EBAI4	Toshiba	EEPROM	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	30 mA	67108864 words	3.3	NO	3/3.3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32	Flash Memories		.8 mm	85 Cel			64MX8	64M	-40 Cel	512	YES		YES	BOTTOM		R-PBGA-B63		3.6 V	1 mm			9 mm	Not Qualified			536870912 bit	2.7 V		2K				NAND TYPE	.00005 Amp	11 mm	25 ns	3	NO
TC58DVG02D5BAI4	Toshiba	EEPROM	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	30 mA	134217728 words	3.3	NO	3/3.3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32	Flash Memories		.8 mm	85 Cel			128MX8	128M	-40 Cel	1K	YES		YES	BOTTOM		R-PBGA-B63		3.6 V	1 mm			9 mm	Not Qualified			1073741824 bit	2.7 V		2K				NAND TYPE	.00005 Amp	11 mm	25 ns	3	NO
TH58NVG4S0FBAID	Toshiba	EEPROM	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			2147483648 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	85 Cel			2GX8	2G	-40 Cel					BOTTOM		R-PBGA-B63		3.6 V	1 mm			10 mm				17179869184 bit	2.7 V								11 mm		3
TC58NVM9S3EBAI6	Toshiba	EEPROM	INDUSTRIAL	67	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	30 mA	67108864 words	3.3	NO	3/3.3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA69,10X12,32	Flash Memories		.8 mm	85 Cel			64MX8	64M	-40 Cel	512	YES		YES	BOTTOM		R-PBGA-B67		3.6 V	1 mm			6.5 mm	Not Qualified			536870912 bit	2.7 V		2K				NAND TYPE	.00005 Amp	8 mm	25 ns	3	NO
TC58DYG02D5BAI4	Toshiba	EEPROM	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	30 mA	134217728 words	1.8	NO	1.8	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32	Flash Memories		.8 mm	85 Cel			128MX8	128M	-40 Cel	1K	YES		YES	BOTTOM		R-PBGA-B63		1.95 V	1 mm			9 mm	Not Qualified			1073741824 bit	1.7 V		2K				NAND TYPE	.00005 Amp	11 mm	25 ns	3	NO
TC58DVG02A5BAJ4	Toshiba	EEPROM	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	ASYNCHRONOUS			134217728 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	85 Cel			128MX8	128M	-40 Cel					BOTTOM		R-PBGA-B63		3.6 V	1 mm			9 mm				1073741824 bit	2.7 V								11 mm		3
TH58NYG3S0HBAI4	Toshiba	EEPROM	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			1073741824 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	85 Cel			1GX8	1G	-40 Cel					BOTTOM		R-PBGA-B63		1.95 V	1 mm			9 mm				8589934592 bit	1.7 V								11 mm		3
TC58NVG2S0FBAI4	Toshiba	EEPROM	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	256K	30 mA	536870912 words	3.3	YES	3/3.3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32	Flash Memories		.8 mm	85 Cel			512MX8	512M	-40 Cel	2K	YES		YES	BOTTOM		R-PBGA-B63		3.6 V	1 mm			9 mm	Not Qualified			4294967296 bit	2.7 V		4K				NAND TYPE	.00005 Amp	11 mm	25 ns	3	YES
TC58DYG02D5BAI6	Toshiba	EEPROM	INDUSTRIAL	67	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	30 mA	134217728 words	1.8	NO	1.8	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA67,8X10,32	Flash Memories		.8 mm	85 Cel			128MX8	128M	-40 Cel	1K	YES		YES	BOTTOM		R-PBGA-B67		1.95 V	1 mm			6.5 mm	Not Qualified			1073741824 bit	1.7 V		2K				NAND TYPE	.00005 Amp	8 mm	25 ns	3	NO
TH58NYG3S0HBAI6	Toshiba	EEPROM	INDUSTRIAL	67	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			1073741824 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	85 Cel			1GX8	1G	-40 Cel					BOTTOM		R-PBGA-B67		1.95 V	1 mm			6.5 mm				8589934592 bit	1.7 V								8 mm		3

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.