VQCCN EEPROM 17

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	I2C Control Byte	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Programming Voltage (V)
DS28EC20Q+T	Analog Devices	EEPROM	INDUSTRIAL	6	VQCCN	SQUARE	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	ASYNCHRONOUS	.9 mA	20480 words			1	CHIP CARRIER, VERY THIN PROFILE	SOLCC6,.11,37		40	.95 mm	85 Cel	20KX1	2K	-40 Cel	Matte Tin (Sn) - annealed		DUAL	1		S-XDSO-N6	1	5.25 V	.8 mm	200000 Write/Erase Cycles		3 mm			1-WIRE	20480 bit	4 V	e3	30	260		3 mm
CAT24C21RD4E-TE13	Onsemi	EEPROM	AUTOMOTIVE	8	VQCCN	SQUARE	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		128 words	3		8	CHIP CARRIER, VERY THIN PROFILE				.65 mm	125 Cel	128X8	128	-40 Cel	TIN LEAD		QUAD			S-XQCC-N8	1	5.5 V	.8 mm		.4 MHz	3 mm	Not Qualified	5 ms	I2C	1024 bit	2.5 V	e0				4.9 mm
CAT24C21ZD4E-TE13	Onsemi	EEPROM	AUTOMOTIVE	8	VQCCN	SQUARE	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		128 words	3		8	CHIP CARRIER, VERY THIN PROFILE				.65 mm	125 Cel	128X8	128	-40 Cel	MATTE TIN		QUAD			S-XQCC-N8	1	5.5 V	.8 mm		.4 MHz	3 mm	Not Qualified	5 ms	I2C	1024 bit	2.5 V	e3				4.9 mm
M95080-WMB6P	STMicroelectronics	EEPROM	INDUSTRIAL	8	VQCCN	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	2 mA	1024 words	5	3/5	8	CHIP CARRIER, VERY THIN PROFILE	SOLCC8,.11,20	EEPROMs	40	.5 mm	85 Cel	1KX8	1K	-40 Cel			BOTTOM		HARDWARE/SOFTWARE	R-XBCC-N8		5.5 V	.6 mm	1000000 Write/Erase Cycles	5 MHz	2 mm	Not Qualified	5 ms	SPI	8192 bit	2.5 V		NOT SPECIFIED	NOT SPECIFIED	.000005 Amp	3 mm
M95160-RMB6TG	STMicroelectronics	EEPROM	INDUSTRIAL	8	VQCCN	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	1 mA	2048 words	5	2/5	8	CHIP CARRIER, VERY THIN PROFILE	SOLCC8,.11,20	EEPROMs	40	.5 mm	85 Cel	2KX8	2K	-40 Cel	NICKEL PALLADIUM GOLD		BOTTOM		HARDWARE/SOFTWARE	R-XBCC-N8		5.5 V	.6 mm	1000000 Write/Erase Cycles	5 MHz	2 mm	Not Qualified	5 ms	SPI	16384 bit	1.8 V	e4			.0000005 Amp	3 mm
M95160-RMB6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	VQCCN	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	1 mA	2048 words	5	2/5	8	CHIP CARRIER, VERY THIN PROFILE	SOLCC8,.11,20	EEPROMs	40	.5 mm	85 Cel	2KX8	2K	-40 Cel			BOTTOM		HARDWARE/SOFTWARE	R-XBCC-N8		5.5 V	.6 mm	1000000 Write/Erase Cycles	5 MHz	2 mm	Not Qualified	5 ms	SPI	16384 bit	1.8 V		NOT SPECIFIED	NOT SPECIFIED	.0000005 Amp	3 mm
M95080-WMB6TG	STMicroelectronics	EEPROM	INDUSTRIAL	8	VQCCN	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	2 mA	1024 words	5	3/5	8	CHIP CARRIER, VERY THIN PROFILE	SOLCC8,.11,20	EEPROMs	40	.5 mm	85 Cel	1KX8	1K	-40 Cel	NICKEL PALLADIUM GOLD		BOTTOM		HARDWARE/SOFTWARE	R-XBCC-N8		5.5 V	.6 mm	1000000 Write/Erase Cycles	5 MHz	2 mm	Not Qualified	5 ms	SPI	8192 bit	2.5 V	e4			.000005 Amp	3 mm
M95160-RMB6P	STMicroelectronics	EEPROM	INDUSTRIAL	8	VQCCN	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	1 mA	2048 words	5	2/5	8	CHIP CARRIER, VERY THIN PROFILE	SOLCC8,.11,20	EEPROMs	40	.5 mm	85 Cel	2KX8	2K	-40 Cel			BOTTOM		HARDWARE/SOFTWARE	R-XBCC-N8		5.5 V	.6 mm	1000000 Write/Erase Cycles	5 MHz	2 mm	Not Qualified	5 ms	SPI	16384 bit	1.8 V		NOT SPECIFIED	NOT SPECIFIED	.0000005 Amp	3 mm
M95080-RMB6P	STMicroelectronics	EEPROM	INDUSTRIAL	8	VQCCN	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	1 mA	1024 words	5	2/5	8	CHIP CARRIER, VERY THIN PROFILE	SOLCC8,.11,20	EEPROMs	40	.5 mm	85 Cel	1KX8	1K	-40 Cel			BOTTOM		HARDWARE/SOFTWARE	R-XBCC-N8		5.5 V	.6 mm	1000000 Write/Erase Cycles	5 MHz	2 mm	Not Qualified	5 ms	SPI	8192 bit	1.8 V		NOT SPECIFIED	NOT SPECIFIED	.0000005 Amp	3 mm
M95160-RMB6G	STMicroelectronics	EEPROM	INDUSTRIAL	8	VQCCN	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	1 mA	2048 words	5	2/5	8	CHIP CARRIER, VERY THIN PROFILE	SOLCC8,.11,20	EEPROMs	40	.5 mm	85 Cel	2KX8	2K	-40 Cel			BOTTOM		HARDWARE/SOFTWARE	R-XBCC-N8		5.5 V	.6 mm	1000000 Write/Erase Cycles	5 MHz	2 mm	Not Qualified	5 ms	SPI	16384 bit	1.8 V		NOT SPECIFIED	NOT SPECIFIED	.0000005 Amp	3 mm
M95080-RMB6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	VQCCN	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	1 mA	1024 words	5	2/5	8	CHIP CARRIER, VERY THIN PROFILE	SOLCC8,.11,20	EEPROMs	40	.5 mm	85 Cel	1KX8	1K	-40 Cel			BOTTOM		HARDWARE/SOFTWARE	R-XBCC-N8		5.5 V	.6 mm	1000000 Write/Erase Cycles	5 MHz	2 mm	Not Qualified	5 ms	SPI	8192 bit	1.8 V		NOT SPECIFIED	NOT SPECIFIED	.0000005 Amp	3 mm
M95080-RMB6G	STMicroelectronics	EEPROM	INDUSTRIAL	8	VQCCN	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	1 mA	1024 words	5	2/5	8	CHIP CARRIER, VERY THIN PROFILE	SOLCC8,.11,20	EEPROMs	40	.5 mm	85 Cel	1KX8	1K	-40 Cel			BOTTOM		HARDWARE/SOFTWARE	R-XBCC-N8		5.5 V	.6 mm	1000000 Write/Erase Cycles	5 MHz	2 mm	Not Qualified	5 ms	SPI	8192 bit	1.8 V		NOT SPECIFIED	NOT SPECIFIED	.0000005 Amp	3 mm
M95080-WMB6G	STMicroelectronics	EEPROM	INDUSTRIAL	8	VQCCN	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	2 mA	1024 words	5	3/5	8	CHIP CARRIER, VERY THIN PROFILE	SOLCC8,.11,20	EEPROMs	40	.5 mm	85 Cel	1KX8	1K	-40 Cel			BOTTOM		HARDWARE/SOFTWARE	R-XBCC-N8		5.5 V	.6 mm	1000000 Write/Erase Cycles	5 MHz	2 mm	Not Qualified	5 ms	SPI	8192 bit	2.5 V		NOT SPECIFIED	NOT SPECIFIED	.000005 Amp	3 mm
M95080-WMB6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	VQCCN	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	2 mA	1024 words	5	3/5	8	CHIP CARRIER, VERY THIN PROFILE	SOLCC8,.11,20	EEPROMs	40	.5 mm	85 Cel	1KX8	1K	-40 Cel			BOTTOM		HARDWARE/SOFTWARE	R-XBCC-N8		5.5 V	.6 mm	1000000 Write/Erase Cycles	5 MHz	2 mm	Not Qualified	5 ms	SPI	8192 bit	2.5 V		NOT SPECIFIED	NOT SPECIFIED	.000005 Amp	3 mm
M95080-RMB6TG	STMicroelectronics	EEPROM	INDUSTRIAL	8	VQCCN	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	1 mA	1024 words	5	2/5	8	CHIP CARRIER, VERY THIN PROFILE	SOLCC8,.11,20	EEPROMs	40	.5 mm	85 Cel	1KX8	1K	-40 Cel	NICKEL PALLADIUM GOLD		BOTTOM		HARDWARE/SOFTWARE	R-XBCC-N8	1	5.5 V	.6 mm	1000000 Write/Erase Cycles	5 MHz	2 mm	Not Qualified	5 ms	SPI	8192 bit	1.8 V	e4			.0000005 Amp	3 mm
DS28CZ04G-4+T	Maxim Integrated	EEPROM	INDUSTRIAL	12	VQCCN	SQUARE	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	.5 mA	512 words	3.6	2.5/5	8	CHIP CARRIER, VERY THIN PROFILE	LCC12,.16SQ,32	EEPROMs	40	.8 mm	85 Cel	512X8	512	-40 Cel	MATTE TIN	1010DDMR	QUAD		HARDWARE	S-XQCC-N12	1	5.25 V	.8 mm	200000 Write/Erase Cycles	.4 MHz	4 mm	Not Qualified		I2C	4096 bit	2 V	e3	30	260		4 mm	5
DS28CZ04G-4+	Maxim Integrated	EEPROM	INDUSTRIAL	12	VQCCN	SQUARE	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	.5 mA	512 words	3.6	2.5/5	8	CHIP CARRIER, VERY THIN PROFILE	LCC12,.16SQ,32	EEPROMs	40	.8 mm	85 Cel	512X8	512	-40 Cel	MATTE TIN	1010DDMR	QUAD		HARDWARE	S-XQCC-N12	1	5.25 V	.8 mm	200000 Write/Erase Cycles	.4 MHz	4 mm	Not Qualified		I2C	4096 bit	2 V	e3	30	260		4 mm	5

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.