VSOF EEPROM 18

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	No. of Words	Nominal Supply Voltage / Vsup (V)	Memory Width	Package Style (Meter)	Alternate Memory Width	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Length
S-93C66BD0I-I8T1U	Ablic	EEPROM	INDUSTRIAL	8	VSOF	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	FLAT	SERIAL	SYNCHRONOUS	256 words	5	16	SMALL OUTLINE, VERY THIN PROFILE		100	.5 mm	85 Cel	256X16	256	-40 Cel	TIN	DUAL	R-PDSO-F8	5.5 V	.5 mm	2 MHz	1.97 mm		8 ms	3-WIRE	4096 bit	4.5 V	100 YEARS DATA RETENTION	e3	2.23 mm
S-93L46AD0I-I8T1U	Ablic	EEPROM	INDUSTRIAL	8	VSOF	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	FLAT	SERIAL	SYNCHRONOUS	64 words	5	16	SMALL OUTLINE, VERY THIN PROFILE		100	.5 mm	85 Cel	64X16	64	-40 Cel	TIN	DUAL	R-PDSO-F8	5.5 V	.5 mm	2 MHz	1.97 mm	Not Qualified	8 ms	MICROWIRE	1024 bit	1.6 V	100 YEAR DATA RETENTION	e3	2.23 mm
S-93L66AD0I-I8T1U	Ablic	EEPROM	INDUSTRIAL	8	VSOF	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	FLAT	SERIAL	SYNCHRONOUS	256 words	5	16	SMALL OUTLINE, VERY THIN PROFILE		100	.5 mm	85 Cel	256X16	256	-40 Cel	TIN	DUAL	R-PDSO-F8	5.5 V	.5 mm	2 MHz	1.97 mm	Not Qualified	8 ms	MICROWIRE	4096 bit	1.6 V	100 YEAR DATA RETENTION	e3	2.23 mm
S-93C56BD0I-I8T1U	Ablic	EEPROM	INDUSTRIAL	8	VSOF	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	FLAT	SERIAL	SYNCHRONOUS	128 words	5	16	SMALL OUTLINE, VERY THIN PROFILE		100	.5 mm	85 Cel	128X16	128	-40 Cel	TIN	DUAL	R-PDSO-F8	5.5 V	.5 mm	2 MHz	1.97 mm		8 ms	3-WIRE	2048 bit	4.5 V	100 YEARS DATA RETENTION	e3	2.23 mm
S-24C16DI-I8T1U5	Ablic	EEPROM	INDUSTRIAL	8	VSOF	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	FLAT	SERIAL	SYNCHRONOUS	2048 words	5	8	SMALL OUTLINE, VERY THIN PROFILE			.5 mm	85 Cel	2KX8	2K	-40 Cel	TIN	DUAL	R-PDSO-F8	5.5 V	.5 mm	1 MHz	1.97 mm		5 ms	I2C	16384 bit	2.5 V	IT ALSO OPERATES AT 0.4 MHZ AT 1.7 TO 5.5 V SUPPLY VOLTAGE	e3	2.23 mm
S-25C080A0I-I8T1U	Ablic	EEPROM	INDUSTRIAL	8	VSOF	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	FLAT	SERIAL	SYNCHRONOUS	1024 words	5	8	SMALL OUTLINE, VERY THIN PROFILE			.5 mm	85 Cel	1KX8	1K	-40 Cel	TIN	DUAL	R-PDSO-F8	5.5 V	.5 mm	5 MHz	1.97 mm		4 ms	SPI	8192 bit	2.5 V	IT ALSO HAVE FREQUENCY OF 2 MHZ OPERATES AT 1.6 TO 2.5 V SUPPLY VOLTAGE	e3	2.23 mm
CAT25010VP2ET	Onsemi	EEPROM	AUTOMOTIVE	8	VSOF	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	FLAT	SERIAL	SYNCHRONOUS	128 words	3.6	8	SMALL OUTLINE, VERY THIN PROFILE	8	100	.5 mm	125 Cel	128X8	128	-40 Cel	MATTE TIN	DUAL	R-PDSO-F8	5.5 V	.8 mm	10 MHz	1.9 mm	Not Qualified	5 ms	SPI	1024 bit	1.8 V	100 YEAR DATA RETENTION	e3	2 mm
CAT25010VP2IT	Onsemi	EEPROM	INDUSTRIAL	8	VSOF	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	FLAT	SERIAL	SYNCHRONOUS	128 words	3.6	8	SMALL OUTLINE, VERY THIN PROFILE	8	100	.5 mm	85 Cel	128X8	128	-40 Cel	MATTE TIN	DUAL	R-PDSO-F8	5.5 V	.8 mm	10 MHz	1.9 mm	Not Qualified	5 ms	SPI	1024 bit	1.8 V	100 YEAR DATA RETENTION	e3	2 mm
CAT25010VP2E-GT	Onsemi	EEPROM	AUTOMOTIVE	8	VSOF	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	FLAT	SERIAL	SYNCHRONOUS	128 words	3.6	8	SMALL OUTLINE, VERY THIN PROFILE	8	100	.5 mm	125 Cel	128X8	128	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	R-PDSO-F8	5.5 V	.8 mm	10 MHz	1.9 mm	Not Qualified	5 ms	SPI	1024 bit	1.8 V	100 YEAR DATA RETENTION	e4	2 mm
CAT25040VP2I-GTD	Onsemi	EEPROM	INDUSTRIAL	8	VSOF	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	FLAT	SERIAL	SYNCHRONOUS	128 words	3.6	8	SMALL OUTLINE, VERY THIN PROFILE	8	100	.5 mm	85 Cel	128X8	128	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	R-PDSO-F8	5.5 V	.8 mm	10 MHz	1.9 mm	Not Qualified	5 ms	SPI	1024 bit	1.8 V	100 YEAR DATA RETENTION	e4	2 mm
CAT25040VP2ETD	Onsemi	EEPROM	AUTOMOTIVE	8	VSOF	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	FLAT	SERIAL	SYNCHRONOUS	128 words	3.6	8	SMALL OUTLINE, VERY THIN PROFILE	8	100	.5 mm	125 Cel	128X8	128	-40 Cel	MATTE TIN	DUAL	R-PDSO-F8	5.5 V	.8 mm	10 MHz	1.9 mm	Not Qualified	5 ms	SPI	1024 bit	1.8 V	100 YEAR DATA RETENTION	e3	2 mm
CAT25020VP2ET	Onsemi	EEPROM	AUTOMOTIVE	8	VSOF	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	FLAT	SERIAL	SYNCHRONOUS	128 words	3.6	8	SMALL OUTLINE, VERY THIN PROFILE	8	100	.5 mm	125 Cel	128X8	128	-40 Cel	MATTE TIN	DUAL	R-PDSO-F8	5.5 V	.8 mm	10 MHz	1.9 mm	Not Qualified	5 ms	SPI	1024 bit	1.8 V	100 YEAR DATA RETENTION	e3	2 mm
CAT25040VP2E-GTD	Onsemi	EEPROM	AUTOMOTIVE	8	VSOF	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	FLAT	SERIAL	SYNCHRONOUS	128 words	3.6	8	SMALL OUTLINE, VERY THIN PROFILE	8	100	.5 mm	125 Cel	128X8	128	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	R-PDSO-F8	5.5 V	.8 mm	10 MHz	1.9 mm	Not Qualified	5 ms	SPI	1024 bit	1.8 V	100 YEAR DATA RETENTION	e4	2 mm
CAT25020VP2I-GT	Onsemi	EEPROM	INDUSTRIAL	8	VSOF	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	FLAT	SERIAL	SYNCHRONOUS	128 words	3.6	8	SMALL OUTLINE, VERY THIN PROFILE	8	100	.5 mm	85 Cel	128X8	128	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	R-PDSO-F8	5.5 V	.8 mm	10 MHz	1.9 mm	Not Qualified	5 ms	SPI	1024 bit	1.8 V	100 YEAR DATA RETENTION	e4	2 mm
CAT25020VP2E-GT	Onsemi	EEPROM	AUTOMOTIVE	8	VSOF	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	FLAT	SERIAL	SYNCHRONOUS	128 words	3.6	8	SMALL OUTLINE, VERY THIN PROFILE	8	100	.5 mm	125 Cel	128X8	128	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	R-PDSO-F8	5.5 V	.8 mm	10 MHz	1.9 mm	Not Qualified	5 ms	SPI	1024 bit	1.8 V	100 YEAR DATA RETENTION	e4	2 mm
CAT25010VP2I-GT	Onsemi	EEPROM	INDUSTRIAL	8	VSOF	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	FLAT	SERIAL	SYNCHRONOUS	128 words	3.6	8	SMALL OUTLINE, VERY THIN PROFILE	8	100	.5 mm	85 Cel	128X8	128	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	R-PDSO-F8	5.5 V	.8 mm	10 MHz	1.9 mm	Not Qualified	5 ms	SPI	1024 bit	1.8 V	100 YEAR DATA RETENTION	e4	2 mm
CAT25040VP2ITD	Onsemi	EEPROM	INDUSTRIAL	8	VSOF	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	FLAT	SERIAL	SYNCHRONOUS	128 words	3.6	8	SMALL OUTLINE, VERY THIN PROFILE	8	100	.5 mm	85 Cel	128X8	128	-40 Cel	MATTE TIN	DUAL	R-PDSO-F8	5.5 V	.8 mm	10 MHz	1.9 mm	Not Qualified	5 ms	SPI	1024 bit	1.8 V	100 YEAR DATA RETENTION	e3	2 mm
CAT25020VP2IT	Onsemi	EEPROM	INDUSTRIAL	8	VSOF	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	FLAT	SERIAL	SYNCHRONOUS	128 words	3.6	8	SMALL OUTLINE, VERY THIN PROFILE	8	100	.5 mm	85 Cel	128X8	128	-40 Cel	MATTE TIN	DUAL	R-PDSO-F8	5.5 V	.8 mm	10 MHz	1.9 mm	Not Qualified	5 ms	SPI	1024 bit	1.8 V	100 YEAR DATA RETENTION	e3	2 mm

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.