VSON EEPROM 1,486

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	I2C Control Byte	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Programming Voltage (V)
CAT24C256HU4IGT3	Onsemi	EEPROM	INDUSTRIAL	8	VSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	3 mA	32768 words	5	2/5	8	SMALL OUTLINE, VERY THIN PROFILE	SOLCC8,.12,20		EEPROMs	100	.5 mm	85 Cel			32KX8	32K	-40 Cel	NICKEL PALLADIUM GOLD	1010DDDR	DUAL		HARDWARE	R-PDSO-N8	1	5.5 V	.55 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	262144 bit	1.8 V	100 YEAR DATA RETENTION		e4	30	260	.000001 Amp	3 mm
AT24C256C-MAHL-T	Microchip Technology	EEPROM	INDUSTRIAL	8	VSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	32768 words	3	2/5	8	SMALL OUTLINE, VERY THIN PROFILE	SOLCC8,.12,20		EEPROMs	100	.5 mm	85 Cel		OPEN-DRAIN	32KX8	32K	-40 Cel	NICKEL PALLADIUM GOLD	1010DDDR	DUAL	1	HARDWARE	R-PDSO-N8	1	5.5 V	.6 mm	1000000 Write/Erase Cycles	1 MHz	2 mm	Not Qualified	5 ms	I2C	262144 bit	2.5 V	ALSO OPERATES 1.7V TO 5.5V @0.4MHZ		e4			.000006 Amp	3 mm	3
AT21CS01-MSHM10-T	Microchip Technology	EEPROM	INDUSTRIAL	2	VSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	.5 mA	128 words			8	CHIP CARRIER, VERY THIN PROFILE	SURF MNT 2,.14X.2			100	2 mm	85 Cel			128X8	128	-40 Cel		1010DDDR	SINGLE	1		R-PSSO-N2		3.6 V	.4 mm	1000000 Write/Erase Cycles		3.5 mm		5 ms	1-WIRE	1024 bit	1.7 V		8		NOT SPECIFIED	NOT SPECIFIED	.0000025 Amp	5 mm
24LC512T-I/MF	Microchip Technology	EEPROM	INDUSTRIAL	8	VSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	5 mA	65536 words	4.5	3/5	8	SMALL OUTLINE, VERY THIN PROFILE	SOLCC8,.25		EEPROMs	200	1.27 mm	85 Cel			64KX8	64K	-40 Cel	MATTE TIN	1010DDDR	DUAL		HARDWARE	R-PDSO-N8	1	5.5 V	1 mm	1000000 Write/Erase Cycles	.4 MHz	5 mm	Not Qualified	5 ms	I2C	524288 bit	2.5 V			e3	40	260	.000001 Amp	6 mm
24LC128-I/MF	Microchip Technology	EEPROM	INDUSTRIAL	8	VSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	16384 words	4.5	3/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		EEPROMs	200	1.27 mm	85 Cel		OPEN-DRAIN	16KX8	16K	-40 Cel	MATTE TIN	1010DDDR	DUAL	1	HARDWARE	R-PDSO-N8	1	5.5 V	1 mm	1000000 Write/Erase Cycles	.4 MHz	5 mm	Not Qualified	5 ms	I2C	131072 bit	2.5 V			e3	40	260	.000005 Amp	6 mm	4.5
AT25256B-MAHL-T	Microchip Technology	EEPROM	INDUSTRIAL	8	VSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	NO LEAD	SERIAL	SYNCHRONOUS	10 mA	32768 words	5	2/5	8	SMALL OUTLINE, VERY THIN PROFILE	SOLCC8,.12,20		EEPROMs	100	.5 mm	85 Cel		3-STATE	32KX8	32K	-40 Cel	NICKEL PALLADIUM GOLD		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-N8	1	5.5 V	.6 mm	1000000 Write/Erase Cycles	20 MHz	2 mm	Not Qualified	5 ms	SPI	262144 bit	4.5 V	ALSO OPERATES AT 2.5V TO 5.5V @10MHZ AND 1.8V TO 5.5V @5MHZ		e4	40	260	.000005 Amp	3 mm	5
25AA1024-I/MF	Microchip Technology	EEPROM	INDUSTRIAL	8	VSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	10 mA	1048576 words	5		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25			200	1.27 mm	85 Cel		3-STATE	1MX1	1M	-40 Cel	MATTE TIN		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-N8	1	5.5 V	1 mm	1000000 Write/Erase Cycles	20 MHz	5 mm	Not Qualified	6 ms	SPI	8388608 bit	4.5 V	OPERTAES WITH 2.5VMIN @ 10MHZ		e3	40	260	.000012 Amp	6 mm	5
24LC512-I/MF	Microchip Technology	EEPROM	INDUSTRIAL	8	VSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	5 mA	65536 words	4.5	3/5	8	SMALL OUTLINE, VERY THIN PROFILE	SOLCC8,.25		EEPROMs	200	1.27 mm	85 Cel			64KX8	64K	-40 Cel	MATTE TIN	1010DDDR	DUAL		HARDWARE	R-PDSO-N8	1	5.5 V	1 mm	1000000 Write/Erase Cycles	.4 MHz	5 mm	Not Qualified	5 ms	I2C	524288 bit	2.5 V			e3	40	260	.000001 Amp	6 mm
AT21CS01-MSHM11-T	Microchip Technology	EEPROM	INDUSTRIAL	2	VSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	NO LEAD	SERIAL	ASYNCHRONOUS	.5 mA	128 words			8	CHIP CARRIER, VERY THIN PROFILE	SURF MNT 2,.14X.2			100	2 mm	85 Cel		OPEN-DRAIN	128X8	128	-40 Cel			SINGLE	1		R-PSSO-N2		3.6 V	.4 mm	1000000 Write/Erase Cycles		3.5 mm		5 ms	1-WIRE	1024 bit	1.7 V						.0000025 Amp	5 mm
M24LR16E-RMC6T/2	STMicroelectronics	EEPROM	INDUSTRIAL	8	VSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	.4 mA	2048 words	2.5	2/5	8	SMALL OUTLINE, VERY THIN PROFILE	SOLCC8,.11,20		EEPROMs	40	.5 mm	85 Cel			2KX8	2K	-40 Cel		1010C11R	DUAL		SOFTWARE	R-PDSO-N8	1	5.5 V	.6 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	16384 bit	1.8 V						.00003 Amp	3 mm
M95640-RMB6TG	STMicroelectronics	EEPROM	INDUSTRIAL	8	VSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	3 mA	8192 words	2.5	2/5	8	SMALL OUTLINE, VERY THIN PROFILE	SOLCC8,.11,20		EEPROMs	40	.5 mm	85 Cel			8KX8	8K	-40 Cel	NICKEL PALLADIUM GOLD		DUAL		HARDWARE/SOFTWARE	R-XDSO-N8	1	5.5 V	.6 mm	1000000 Write/Erase Cycles	5 MHz	2 mm	Not Qualified	10 ms	SPI	65536 bit	1.8 V			e4			.000001 Amp	3 mm
M24C02-FMH6TG	STMicroelectronics	EEPROM	INDUSTRIAL	5	VSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	.8 mA	256 words	1.8		8	SMALL OUTLINE, VERY THIN PROFILE	SOLCC5,.06,16			200	.4 mm	85 Cel		OPEN-DRAIN	256X8	256	-40 Cel		1010000R	DUAL		HARDWARE	R-PDSO-N5	1	5.5 V	.6 mm	4000000 Write/Erase Cycles	.4 MHz	1.4 mm		5 ms	I2C	2048 bit	1.7 V						.000001 Amp	1.7 mm
25AA1024T-I/MF	Microchip Technology	EEPROM	INDUSTRIAL	8	VSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	10 mA	1048576 words	5		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25			200	1.27 mm	85 Cel		3-STATE	1MX1	1M	-40 Cel	MATTE TIN		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-N8	1	5.5 V	1 mm	1000000 Write/Erase Cycles	20 MHz	5 mm	Not Qualified	6 ms	SPI	8388608 bit	4.5 V	OPERTAES WITH 2.5VMIN @ 10MHZ		e3	40	260	.000012 Amp	6 mm	5
24AA128-I/MF	Microchip Technology	EEPROM	INDUSTRIAL	8	VSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	16384 words	2.5	2/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		EEPROMs	200	1.27 mm	85 Cel		OPEN-DRAIN	16KX8	16K	-40 Cel	Matte Tin (Sn) - annealed	1010DDDR	DUAL	1	HARDWARE	R-PDSO-N8	1	5.5 V	1 mm	1000000 Write/Erase Cycles	.4 MHz	5 mm	Not Qualified	5 ms	I2C	131072 bit	1.7 V			e3	40	260	.000005 Amp	6 mm	2.5
AT21CS01-MSHM15-T	Microchip Technology	EEPROM	INDUSTRIAL	2	VSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	TS 16949	NO LEAD	SERIAL	ASYNCHRONOUS	.5 mA	128 words			8	SMALL OUTLINE, VERY THIN PROFILE	SURF MNT 2,.14X.2			100	2 mm	85 Cel		OPEN-DRAIN	128X8	128	-40 Cel			DUAL	1		R-XDSO-N2		3.6 V	.4 mm	1000000 Write/Erase Cycles		3.5 mm		5 ms	1-WIRE	1024 bit	1.7 V						.0000025 Amp	5 mm
AT21CS11-MSH10-T	Microchip Technology	EEPROM	INDUSTRIAL	2	VSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	TS 16949	NO LEAD	SERIAL	ASYNCHRONOUS	.5 mA	128 words			8	SMALL OUTLINE, VERY THIN PROFILE	SURF MNT 2,.14X.2			100	2 mm	85 Cel		OPEN-DRAIN	128X8	128	-40 Cel			DUAL	1		R-XDSO-N2		4.5 V	.4 mm	1000000 Write/Erase Cycles		3.5 mm		5 ms	1-WIRE	1024 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	.000003 Amp	5 mm
M93C66-RMB6TG	STMicroelectronics	EEPROM	INDUSTRIAL	8	VSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	2 mA	256 words	5	2/5	16	SMALL OUTLINE, VERY THIN PROFILE	SOLCC8,.11,20	8	EEPROMs	40	.5 mm	85 Cel			256X16	256	-40 Cel			DUAL		SOFTWARE	R-XDSO-N8		5.5 V	.6 mm	1000000 Write/Erase Cycles	1 MHz	2 mm	Not Qualified	10 ms	MICROWIRE	4096 bit	1.8 V			e4	NOT SPECIFIED	NOT SPECIFIED	.000002 Amp	3 mm
25AA256T-I/MF	Microchip Technology	EEPROM	INDUSTRIAL	8	VSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	6 mA	32768 words	2.5	2/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		EEPROMs	200	1.27 mm	85 Cel			32KX8	32K	-40 Cel	Matte Tin (Sn) - annealed		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-N8	1	5.5 V	1 mm	1000000 Write/Erase Cycles	10 MHz	5 mm	Not Qualified	5 ms	SPI	262144 bit	1.8 V			e3	40	260	.000001 Amp	6 mm	2.5
AT21CS11-MSH10-B	Microchip Technology	EEPROM	INDUSTRIAL	2	VSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	TS 16949	NO LEAD	SERIAL	ASYNCHRONOUS	.5 mA	128 words			8	SMALL OUTLINE, VERY THIN PROFILE	SURF MNT 2,.14X.2			100	2 mm	85 Cel		OPEN-DRAIN	128X8	128	-40 Cel			DUAL	1		R-XDSO-N2		4.5 V	.4 mm	1000000 Write/Erase Cycles		3.5 mm		5 ms	1-WIRE	1024 bit	2.7 V						.000003 Amp	5 mm
24LC128-E/MF	Microchip Technology	EEPROM	AUTOMOTIVE	8	VSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	16384 words	4.5	3/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		EEPROMs	200	1.27 mm	125 Cel		OPEN-DRAIN	16KX8	16K	-40 Cel	MATTE TIN	1010DDDR	DUAL	1	HARDWARE	R-PDSO-N8	1	5.5 V	1 mm	1000000 Write/Erase Cycles	.4 MHz	5 mm	Not Qualified	5 ms	I2C	131072 bit	2.5 V			e3	40	260	.000005 Amp	6 mm	4.5
24LC128T-E/MF	Microchip Technology	EEPROM	AUTOMOTIVE	8	VSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	16384 words	4.5	3/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		EEPROMs	200	1.27 mm	125 Cel		OPEN-DRAIN	16KX8	16K	-40 Cel	MATTE TIN	1010DDDR	DUAL	1	HARDWARE	R-PDSO-N8	1	5.5 V	1 mm	1000000 Write/Erase Cycles	.4 MHz	5 mm	Not Qualified	5 ms	I2C	131072 bit	2.5 V			e3	40	260	.000005 Amp	6 mm	4.5
24LC128T-I/MF	Microchip Technology	EEPROM	INDUSTRIAL	8	VSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	16384 words	4.5	3/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		EEPROMs	200	1.27 mm	85 Cel		OPEN-DRAIN	16KX8	16K	-40 Cel	MATTE TIN	1010DDDR	DUAL	1	HARDWARE	R-PDSO-N8	1	5.5 V	1 mm	1000000 Write/Erase Cycles	.4 MHz	5 mm	Not Qualified	5 ms	I2C	131072 bit	2.5 V			e3	40	260	.000005 Amp	6 mm	4.5
24LC512-E/MF	Microchip Technology	EEPROM	AUTOMOTIVE	8	VSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	5 mA	65536 words	4.5	3/5	8	SMALL OUTLINE, VERY THIN PROFILE	SOLCC8,.25		EEPROMs	200	1.27 mm	125 Cel			64KX8	64K	-40 Cel	MATTE TIN	1010DDDR	DUAL		HARDWARE	R-PDSO-N8	1	5.5 V	1 mm	1000000 Write/Erase Cycles	.4 MHz	5 mm	Not Qualified	5 ms	I2C	524288 bit	2.5 V			e3	40	260	.000005 Amp	6 mm
AT24C02BY6-10YH-1.8	Atmel	EEPROM	INDUSTRIAL	8	VSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	3 mA	256 words	2.5	2/5	8	SMALL OUTLINE, VERY THIN PROFILE	SOLCC8,.11,20		EEPROMs	100	.5 mm	85 Cel			256X8	256	-40 Cel	NICKEL PALLADIUM GOLD	1010DDDR	DUAL		HARDWARE	R-XDSO-N8		5.5 V	.6 mm	1000000 Write/Erase Cycles	1 MHz	2 mm	Not Qualified	5 ms	I2C	2048 bit	1.8 V			e4		260	.000003 Amp	3 mm
25AA256-E/MF	Microchip Technology	EEPROM	AUTOMOTIVE	8	VSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	6 mA	32768 words	2.5	2/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		EEPROMs	200	1.27 mm	125 Cel	NO	3-STATE	32KX8	32K	-40 Cel	MATTE TIN		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-N8	1	5.5 V	1 mm	1000000 Write/Erase Cycles	10 MHz	5 mm	Not Qualified	5 ms	SPI	262144 bit	1.8 V			e3	40	260	.000001 Amp	6 mm	1.8
25AA256T-E/MF	Microchip Technology	EEPROM	AUTOMOTIVE	8	VSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	6 mA	32768 words	2.5	2/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		EEPROMs	200	1.27 mm	125 Cel	NO	3-STATE	32KX8	32K	-40 Cel	MATTE TIN		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-N8	1	5.5 V	1 mm	1000000 Write/Erase Cycles	10 MHz	5 mm	Not Qualified	5 ms	SPI	262144 bit	1.8 V			e3	40	260	.000001 Amp	6 mm	1.8
25LC256T-I/MF	Microchip Technology	EEPROM	INDUSTRIAL	8	VSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	6 mA	32768 words	4.5	2/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		EEPROMs	200	1.27 mm	85 Cel	NO	3-STATE	32KX8	32K	-40 Cel	Matte Tin (Sn) - annealed		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-N8	1	5.5 V	1 mm	1000000 Write/Erase Cycles	10 MHz	5 mm	Not Qualified	5 ms	SPI	262144 bit	2.5 V			e3	40	260	.000001 Amp	6 mm	2.5
AT25128B-MAHL-T	Microchip Technology	EEPROM	INDUSTRIAL	8	VSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	10 mA	16384 words	5	2/5	8	SMALL OUTLINE, VERY THIN PROFILE	SOLCC8,.12,20		EEPROMs	100	.5 mm	85 Cel			16KX8	16K	-40 Cel	NICKEL PALLADIUM GOLD		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-N8	1	5.5 V	.6 mm	1000000 Write/Erase Cycles	20 MHz	2 mm	Not Qualified	5 ms	SPI	131072 bit	4.5 V	2.5V TO 5.5V @ 10MHz AND 1.8V TO 5.5V @ 5MHz		e4	40	260	.000005 Amp	3 mm	5
BR24L02NUX-WTR	ROHM	EEPROM	INDUSTRIAL	8	VSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	2 mA	256 words	2.5	2/5	8	SMALL OUTLINE, VERY THIN PROFILE	SOLCC8,.11,20		EEPROMs	40	.5 mm	85 Cel			256X8	256	-40 Cel		1010DDDR	DUAL		HARDWARE	R-PDSO-N8		5.5 V	.6 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	2048 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED	.000002 Amp	3 mm
24AA512-I/MF	Microchip Technology	EEPROM	INDUSTRIAL	8	VSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	5 mA	65536 words	2.5	2/5	8	SMALL OUTLINE, VERY THIN PROFILE	SOLCC8,.25		EEPROMs	200	1.27 mm	85 Cel			64KX8	64K	-40 Cel	MATTE TIN	1010DDDR	DUAL		HARDWARE	R-PDSO-N8	1	5.5 V	1 mm	1000000 Write/Erase Cycles	.4 MHz	5 mm	Not Qualified	5 ms	I2C	524288 bit	1.7 V			e3	40	260	.000001 Amp	6 mm
24LC32AT-E/MNY	Microchip Technology	EEPROM	AUTOMOTIVE	8	VSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	3 mA	4096 words	5	3/5	8	SMALL OUTLINE, VERY THIN PROFILE	SOLCC8,.11,20		EEPROMs	200	.5 mm	125 Cel			4KX8	4K	-40 Cel	NICKEL PALLADIUM GOLD	1010DDDR	DUAL		HARDWARE	R-PDSO-N8	1	5.5 V	.8 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	32768 bit	2.5 V	2-WIRE SERIAL INTERFACE; DATA RETENTION > 200 YEARS; 1000000 ERASE/WRITE CYCLES GUARANTEED		e4	40	260	.000005 Amp	3 mm
CAT93C57ZD4A-1.8TE13REVE	Onsemi	EEPROM	INDUSTRIAL	8	VSON	SQUARE	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		131072 words	3		16	SMALL OUTLINE, VERY THIN PROFILE		8			.65 mm	105 Cel			128KX16	128K	-40 Cel	MATTE TIN		DUAL			S-XDSO-N8	1	6 V	.75 mm		.25 MHz	3 mm	Not Qualified		MICROWIRE	2097152 bit	1.8 V			e3				3 mm
CAT93C57RD4A-REVE	Onsemi	EEPROM	INDUSTRIAL	8	VSON	SQUARE	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		131072 words	3		16	SMALL OUTLINE, VERY THIN PROFILE		8			.65 mm	105 Cel			128KX16	128K	-40 Cel	TIN LEAD		DUAL			S-XDSO-N8	1	6 V	.75 mm		.5 MHz	3 mm	Not Qualified		MICROWIRE	2097152 bit	2.5 V			e0				3 mm
CAT93C57RD4-1.8TE13REVE	Onsemi	EEPROM	COMMERCIAL	8	VSON	SQUARE	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		131072 words	3		16	SMALL OUTLINE, VERY THIN PROFILE		8			.65 mm	70 Cel			128KX16	128K	0 Cel	TIN LEAD		DUAL			S-XDSO-N8	1	6 V	.75 mm		.25 MHz	3 mm	Not Qualified		MICROWIRE	2097152 bit	1.8 V			e0				3 mm
CAT93C57RD4-TE13REVE	Onsemi	EEPROM	COMMERCIAL	8	VSON	SQUARE	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		131072 words	3		16	SMALL OUTLINE, VERY THIN PROFILE		8			.65 mm	70 Cel			128KX16	128K	0 Cel	TIN LEAD		DUAL			S-XDSO-N8	1	6 V	.75 mm		.5 MHz	3 mm	Not Qualified		MICROWIRE	2097152 bit	2.5 V			e0				3 mm
CAT93C57RD4I-1.8REVE	Onsemi	EEPROM	INDUSTRIAL	8	VSON	SQUARE	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		131072 words	3		16	SMALL OUTLINE, VERY THIN PROFILE		8			.65 mm	85 Cel			128KX16	128K	-40 Cel	TIN LEAD		DUAL			S-XDSO-N8	1	6 V	.75 mm		.25 MHz	3 mm	Not Qualified		MICROWIRE	2097152 bit	1.8 V			e0				3 mm
CAT93C57ZD4-1.8TE13REVE	Onsemi	EEPROM	COMMERCIAL	8	VSON	SQUARE	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		131072 words	3		16	SMALL OUTLINE, VERY THIN PROFILE		8			.65 mm	70 Cel			128KX16	128K	0 Cel	MATTE TIN		DUAL			S-XDSO-N8	1	6 V	.75 mm		.25 MHz	3 mm	Not Qualified		MICROWIRE	2097152 bit	1.8 V			e3				3 mm
CAT93C57RD4A-TE13REVE	Onsemi	EEPROM	INDUSTRIAL	8	VSON	SQUARE	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		131072 words	3		16	SMALL OUTLINE, VERY THIN PROFILE		8			.65 mm	105 Cel			128KX16	128K	-40 Cel	TIN LEAD		DUAL			S-XDSO-N8	1	6 V	.75 mm		.5 MHz	3 mm	Not Qualified		MICROWIRE	2097152 bit	2.5 V			e0				3 mm
CAT93C57ZD4I-TE13REVE	Onsemi	EEPROM	INDUSTRIAL	8	VSON	SQUARE	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		131072 words	3		16	SMALL OUTLINE, VERY THIN PROFILE		8			.65 mm	85 Cel			128KX16	128K	-40 Cel	MATTE TIN		DUAL			S-XDSO-N8	1	6 V	.75 mm		.5 MHz	3 mm	Not Qualified		MICROWIRE	2097152 bit	2.5 V			e3				3 mm
CAT93C57ZD4I-1.8TE13REVE	Onsemi	EEPROM	INDUSTRIAL	8	VSON	SQUARE	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		131072 words	3		16	SMALL OUTLINE, VERY THIN PROFILE		8			.65 mm	85 Cel			128KX16	128K	-40 Cel	MATTE TIN		DUAL			S-XDSO-N8	1	6 V	.75 mm		.25 MHz	3 mm	Not Qualified		MICROWIRE	2097152 bit	1.8 V			e3				3 mm
CAT93C57RD4I-1.8TE13REVE	Onsemi	EEPROM	INDUSTRIAL	8	VSON	SQUARE	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		131072 words	3		16	SMALL OUTLINE, VERY THIN PROFILE		8			.65 mm	85 Cel			128KX16	128K	-40 Cel	TIN LEAD		DUAL			S-XDSO-N8	1	6 V	.75 mm		.25 MHz	3 mm	Not Qualified		MICROWIRE	2097152 bit	1.8 V			e0				3 mm
CAT93C57RD4E-REVE	Onsemi	EEPROM	AUTOMOTIVE	8	VSON	SQUARE	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		131072 words	3		16	SMALL OUTLINE, VERY THIN PROFILE		8			.65 mm	125 Cel			128KX16	128K	-40 Cel	TIN LEAD		DUAL			S-XDSO-N8	1	6 V	.75 mm		.5 MHz	3 mm	Not Qualified		MICROWIRE	2097152 bit	2.5 V			e0				3 mm
CAT93C57ZD4-TE13REVE	Onsemi	EEPROM	COMMERCIAL	8	VSON	SQUARE	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		131072 words	3		16	SMALL OUTLINE, VERY THIN PROFILE		8			.65 mm	70 Cel			128KX16	128K	0 Cel	MATTE TIN		DUAL			S-XDSO-N8	1	6 V	.75 mm		.5 MHz	3 mm	Not Qualified		MICROWIRE	2097152 bit	2.5 V			e3				3 mm
CAT93C57ZD4-REVE	Onsemi	EEPROM	COMMERCIAL	8	VSON	SQUARE	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		131072 words	3		16	SMALL OUTLINE, VERY THIN PROFILE		8			.65 mm	70 Cel			128KX16	128K	0 Cel	MATTE TIN		DUAL			S-XDSO-N8	1	6 V	.75 mm		.5 MHz	3 mm	Not Qualified		MICROWIRE	2097152 bit	2.5 V			e3				3 mm
CAT93C57ZD4E-TE13REVE	Onsemi	EEPROM	AUTOMOTIVE	8	VSON	SQUARE	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		131072 words	3		16	SMALL OUTLINE, VERY THIN PROFILE		8			.65 mm	125 Cel			128KX16	128K	-40 Cel	MATTE TIN		DUAL			S-XDSO-N8	1	6 V	.75 mm		.5 MHz	3 mm	Not Qualified		MICROWIRE	2097152 bit	2.5 V			e3				3 mm
CAT93C57RD4-1.8REVE	Onsemi	EEPROM	COMMERCIAL	8	VSON	SQUARE	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		131072 words	3		16	SMALL OUTLINE, VERY THIN PROFILE		8			.65 mm	70 Cel			128KX16	128K	0 Cel	TIN LEAD		DUAL			S-XDSO-N8	1	6 V	.75 mm		.25 MHz	3 mm	Not Qualified		MICROWIRE	2097152 bit	1.8 V			e0				3 mm
CAT34C02VP2IT4	Onsemi	EEPROM	INDUSTRIAL	8	VSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	1 mA	256 words	5	2/5	8	SMALL OUTLINE, VERY THIN PROFILE	SOLCC8,.11,20		EEPROMs	100	.5 mm	85 Cel			256X8	256	-40 Cel	MATTE TIN	1010DDDR	DUAL		HARDWARE/SOFTWARE	R-PDSO-N8	1	5.5 V	.8 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	2048 bit	1.7 V			e3			.000001 Amp	3 mm
CAT93C57RD4-REVE	Onsemi	EEPROM	COMMERCIAL	8	VSON	SQUARE	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		131072 words	3		16	SMALL OUTLINE, VERY THIN PROFILE		8			.65 mm	70 Cel			128KX16	128K	0 Cel	TIN LEAD		DUAL			S-XDSO-N8	1	6 V	.75 mm		.5 MHz	3 mm	Not Qualified		MICROWIRE	2097152 bit	2.5 V			e0				3 mm

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.