VSSOP EEPROM 148

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	I2C Control Byte	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Programming Voltage (V)	Data Polling
CAT24C02TDI-GT3A	Onsemi	EEPROM	INDUSTRIAL	5	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	2048 words	3.3	1.8/5	1	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSOP5/6,.11,37		EEPROMs	100	.95 mm	85 Cel			2KX1	2K	-40 Cel	NICKEL PALLADIUM GOLD	1010000R	DUAL		HARDWARE	R-PDSO-G5	1	5.5 V	1 mm	1000000 Write/Erase Cycles	.4 MHz	1.6 mm	Not Qualified	5 ms	I2C	2048 bit	1.7 V			e4	30	260	.000001 Amp	2.9 mm
CAT24AA16TDI-GT3	Onsemi	EEPROM	INDUSTRIAL	5	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		2048 words	3.3		8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH					.95 mm	85 Cel			2KX8	2K	-40 Cel	NICKEL PALLADIUM GOLD		DUAL			R-PDSO-G5	1	5.5 V	1 mm		.4 MHz	2.8 mm	Not Qualified	5 ms	I2C	16384 bit	1.7 V			e4	30	260		2.9 mm
M95128-RDW6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	16384 words	2.5	2/5	8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	40	.65 mm	85 Cel			16KX8	16K	-40 Cel	NICKEL PALLADIUM GOLD		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	.65 mm	100000 Write/Erase Cycles	2 MHz	3 mm	Not Qualified	5 ms	SPI	131072 bit	1.8 V			e4	30	260	.000003 Amp	4.4 mm
AT24CS01-STUM-T	Microchip Technology	EEPROM	INDUSTRIAL	5	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	2048 words	5	1.8/5	8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSOP5/6,.11,37		EEPROMs	100	.95 mm	85 Cel	NO	3-STATE	2048X8	2048	-40 Cel	MATTE TIN	1010XXXR	DUAL	1	HARDWARE	R-PDSO-G5		5.5 V	1 mm	1000000 Write/Erase Cycles	1 MHz	1.6 mm	Not Qualified	5 ms	I2C	16384 bit	1.7 V			e3	30	260	.000001 Amp	2.9 mm	5
AT24MAC402-STUM-T	Microchip Technology	EEPROM	INDUSTRIAL	5	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	2.5	1.8/5	8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSOP5/6,.11,37		EEPROMs	100	.95 mm	85 Cel		OPEN-DRAIN	256X8	256	-40 Cel	MATTE TIN	1010DDDR	DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G5		5.5 V	1 mm	1000000 Write/Erase Cycles	1 MHz	1.6 mm	Not Qualified	5 ms	I2C	2048 bit	1.7 V			e3			.000006 Amp	2.9 mm	2.5
CAT24AA01TDI-GT3	Onsemi	EEPROM	INDUSTRIAL	5	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1 mA	128 words		2/5	8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSOP5/6,.11,37		EEPROMs	100	.95 mm	85 Cel			128X8	128	-40 Cel	NICKEL PALLADIUM GOLD	1010000R	DUAL		HARDWARE	R-PDSO-G5	1	5.5 V	1 mm	1000000 Write/Erase Cycles	.4 MHz	1.6 mm	Not Qualified	5 ms	I2C	1024 bit	1.7 V			e4	30	260	.000001 Amp	2.9 mm
CAT24AA02TDI-GT3	Onsemi	EEPROM	INDUSTRIAL	5	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1 mA	256 words		2/5	8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSOP5/6,.11,37		EEPROMs	100	.95 mm	85 Cel			256X8	256	-40 Cel	NICKEL PALLADIUM GOLD	1010000R	DUAL		HARDWARE	R-PDSO-G5	1	5.5 V	1 mm	1000000 Write/Erase Cycles	.4 MHz	1.6 mm	Not Qualified	5 ms	I2C	2048 bit	1.7 V			e4	30	260	.000001 Amp	2.9 mm
AT24C02D-STUM-T	Microchip Technology	EEPROM	INDUSTRIAL	5	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	1 mA	256 words	3	1.8/3.3	8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSOP5/6,.11,37		EEPROMs	100	.95 mm	85 Cel		OPEN-DRAIN	256X8	256	-40 Cel	MATTE TIN	1010DDDR	DUAL	1	HARDWARE	R-PDSO-G5		3.6 V	1 mm	1000000 Write/Erase Cycles	1 MHz	1.6 mm	Not Qualified	5 ms	I2C	2048 bit	2.5 V	ALSO OPERATES AT 1.7V TO 3.6V @0.4MHZ		e3			.0000008 Amp	2.9 mm	3
AT24C16D-STUM-T	Microchip Technology	EEPROM	INDUSTRIAL	5	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1 mA	2048 words		1.8/3.3	8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSOP5/6,.11,37		EEPROMs	100	.95 mm	85 Cel		OPEN-DRAIN	2KX8	2K	-40 Cel	MATTE TIN	1010MMMR	DUAL	1	HARDWARE	R-PDSO-G5		3.6 V	1 mm	1000000 Write/Erase Cycles	1 MHz	1.6 mm	Not Qualified	5 ms	I2C	16384 bit	2.5 V	ALSO OPERATES 1.7V AT 100 KHZ STD MODE AND 400 KHZ @ FAST MODE		e3			.0000008 Amp	2.9 mm
AT24C16C-STUM-T	Microchip Technology	EEPROM	INDUSTRIAL	5	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	3 mA	2048 words	3		8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSOP5/6,.11,37			100	.95 mm	85 Cel		OPEN-DRAIN	2KX8	2K	-40 Cel	MATTE TIN	1010DDDR	DUAL	1	HARDWARE	R-PDSO-G5	1	5.5 V	1 mm	1000000 Write/Erase Cycles	1 MHz	1.6 mm		5 ms	I2C	16384 bit	2.5 V	ALSO OPERATES AT 0.4MHZ AT 1.7-5.5 SUPPLY VOLTAGE		e3	40	260	.000006 Amp	2.9 mm	3
AT24C01D-STUM-T	Microchip Technology	EEPROM	INDUSTRIAL	5	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1 mA	128 words	3	1.8/3.3	8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSOP5/6,.11,37		EEPROMs	100	.95 mm	85 Cel		OPEN-DRAIN	128X8	128	-40 Cel	MATTE TIN	1010DDDR	DUAL	1	HARDWARE	R-PDSO-G5	1	3.6 V	1 mm	1000000 Write/Erase Cycles	1 MHz	1.6 mm	Not Qualified	5 ms	I2C	1024 bit	2.5 V	1.7V TO 3.6V @ 0.4MHz		e3	40	260	.0000008 Amp	2.9 mm	3
AT24C32D-STUM-T	Microchip Technology	EEPROM	INDUSTRIAL	5	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	3 mA	4096 words	3		8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSOP5/6,.11,37			100	.95 mm	85 Cel		OPEN-DRAIN	4KX8	4K	-40 Cel	MATTE TIN	1010000R	DUAL	1	HARDWARE	R-PDSO-G5	1	5.5 V	1 mm	1000000 Write/Erase Cycles	1 MHz	1.6 mm		5 ms	I2C	32768 bit	2.5 V	ALSO OPERATES AT 1.7V TO 5.5V @0.4MHZ		e3	40	260	.000006 Amp	2.9 mm	3
AT24MAC602-STUM-T	Microchip Technology	EEPROM	INDUSTRIAL	5	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	2.5	1.8/5	8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSOP5/6,.11,37		EEPROMs	100	.95 mm	85 Cel		OPEN-DRAIN	256X8	256	-40 Cel	MATTE TIN	1010DDDR	DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G5		5.5 V	1 mm	1000000 Write/Erase Cycles	1 MHz	1.6 mm	Not Qualified	5 ms	I2C	2048 bit	1.7 V			e3			.000006 Amp	2.9 mm	2.5
AT24CS02-STUM-T	Microchip Technology	EEPROM	INDUSTRIAL	5	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	2048 words	5	1.8/5	8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSOP5/6,.11,37		EEPROMs	100	.95 mm	85 Cel	NO	3-STATE	2048X8	2048	-40 Cel	MATTE TIN	1010XXXR	DUAL	1	HARDWARE	R-PDSO-G5	1	5.5 V	1 mm	1000000 Write/Erase Cycles	1 MHz	1.6 mm	Not Qualified	5 ms	I2C	16384 bit	1.7 V			e3	30	260	.000001 Amp	2.9 mm	5
CAT24C08TDI-GT3	Onsemi	EEPROM	INDUSTRIAL	5	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	8192 words	3.3	2/5	1	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSOP5/6,.11,37		EEPROMs	100	.95 mm	85 Cel			8KX1	8K	-40 Cel	NICKEL PALLADIUM GOLD	10100MMR	DUAL		HARDWARE	R-PDSO-G5	1	5.5 V	1 mm	1000000 Write/Erase Cycles	.4 MHz	1.6 mm	Not Qualified	5 ms	I2C	8192 bit	1.7 V			e4	30	260	.000001 Amp	2.9 mm
AT24C08C-STUM-T	Microchip Technology	EEPROM	INDUSTRIAL	5	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	3 mA	1024 words	3	1.8/5	8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSOP5/6,.11,37		EEPROMs	100	.95 mm	85 Cel		OPEN-DRAIN	1KX8	1K	-40 Cel	MATTE TIN	10100DDR	DUAL	1	HARDWARE	R-PDSO-G5	1	5.5 V	1 mm	1000000 Write/Erase Cycles	1 MHz	1.6 mm	Not Qualified	5 ms	I2C	8192 bit	2.5 V	ALSO OPERATES AT 1.7V TO 2.5V @0.4MHZ		e3	30	260	.000006 Amp	2.9 mm	3
BR24G01FVM-3GTTR	ROHM	EEPROM	INDUSTRIAL	8	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		128 words	2.5		8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH					.65 mm	85 Cel			128X8	128	-40 Cel			DUAL			R-PDSO-G8		5.5 V	.9 mm		.4 MHz	2.8 mm		5 ms	I2C	1024 bit	1.6 V				NOT SPECIFIED	NOT SPECIFIED		2.9 mm
AT24C01C-STUM-T	Microchip Technology	EEPROM	INDUSTRIAL	5	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words	2.5		8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSOP5/6,.11,37			100	.95 mm	85 Cel		OPEN-DRAIN	128X8	128	-40 Cel	MATTE TIN	1010DDDR	DUAL	1	HARDWARE	R-PDSO-G5	1	5.5 V	1 mm	1000000 Write/Erase Cycles	1 MHz	1.6 mm		5 ms	I2C	1024 bit	1.7 V			e3	40	260	.000006 Amp	2.9 mm	2.5
AT24C02C-STUM-T	Microchip Technology	EEPROM	INDUSTRIAL	5	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	2.5		8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSOP5/6,.11,37			100	.95 mm	85 Cel		OPEN-DRAIN	256X8	256	-40 Cel	MATTE TIN	1010DDDR	DUAL	1	HARDWARE	R-PDSO-G5	1	5.5 V	1 mm	1000000 Write/Erase Cycles	1 MHz	1.6 mm		5 ms	I2C	2048 bit	1.7 V			e3	40	260	.000006 Amp	2.9 mm	2.5
S-93C66BD0II8T1U	Seiko Instruments Usa	EEPROM	INDUSTRIAL	8	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		256 words	5		16	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH				100	.65 mm	85 Cel			256X16	256	-40 Cel	TIN		DUAL			R-PDSO-G8		5.5 V	.8 mm		2 MHz	2.8 mm			3-WIRE	4096 bit	4.5 V	100 YEARS DATA RETENTION		e3				2.9 mm
CAT24C02TDI-GT3	Onsemi	EEPROM	INDUSTRIAL	5	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	2048 words	3.3	1.8/5	1	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSOP5/6,.11,37		EEPROMs	100	.95 mm	85 Cel			2KX1	2K	-40 Cel	NICKEL PALLADIUM GOLD	1010000R	DUAL		HARDWARE	R-PDSO-G5	1	5.5 V	1 mm	1000000 Write/Erase Cycles	.4 MHz	1.6 mm	Not Qualified	5 ms	I2C	2048 bit	1.7 V			e4		260	.000003 Amp	2.9 mm
S-93C56BD0II8T1U	Seiko Instruments Usa	EEPROM	INDUSTRIAL	8	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		128 words	5		16	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH				100	.65 mm	85 Cel			128X16	128	-40 Cel	TIN		DUAL			R-PDSO-G8		5.5 V	.8 mm		2 MHz	2.8 mm			3-WIRE	2048 bit	4.5 V	100 YEARS DATA RETENTION		e3				2.9 mm
AT24C04C-STUM-T	Microchip Technology	EEPROM	INDUSTRIAL	5	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	512 words	5		8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSOP5/6,.11,37			100	.95 mm	85 Cel		OPEN-DRAIN	512X8	512	-40 Cel	MATTE TIN	1010DDMR	DUAL	1	HARDWARE	R-PDSO-G5	1	5.5 V	1 mm	1000000 Write/Erase Cycles	1 MHz	1.6 mm		5 ms	I2C	4096 bit	1.7 V			e3	40	260	.000006 Amp	2.9 mm	5
AT24C32E-STUM-T	Microchip Technology	EEPROM	INDUSTRIAL	5	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1 mA	4096 words	3		8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSOP5/6,.11,37			100	.95 mm	85 Cel		OPEN-DRAIN	4KX8	4K	-40 Cel	MATTE TIN	1010000R	DUAL	1		R-PDSO-G5	1	3.6 V	1 mm	1000000 Write/Erase Cycles	1 MHz	1.6 mm		5 ms	I2C	32768 bit	2.5 V	1.7V TO 3.6V @ 0.1MHz AND 1.7V TO 3.6V @ 0.4MHz		e3	40	260	.0000008 Amp	2.9 mm	3
AT24C04D-STUM-T	Microchip Technology	EEPROM	INDUSTRIAL	5	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1 mA	512 words	3	1.8/3.3	8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSOP5/6,.11,37		EEPROMs	100	.95 mm	85 Cel		OPEN-DRAIN	512X8	512	-40 Cel	MATTE TIN	101000MR	DUAL	1	HARDWARE	R-PDSO-G8		3.6 V	1 mm	1000000 Write/Erase Cycles	1 MHz	1.6 mm	Not Qualified	5 ms	I2C	4096 bit	2.5 V	1.7V TO 3.6V @ 0.1MHz AND 1.7V TO 3.6V @ 0.4MHz	16	e3			.0000008 Amp	2.9 mm	3	YES
CAT24C04TDI-GT3	Onsemi	EEPROM	INDUSTRIAL	5	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	4096 words	3.3	2/5	1	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSOP5/6,.11,37		EEPROMs	100	.95 mm	85 Cel			4KX1	4K	-40 Cel	NICKEL PALLADIUM GOLD	1010000R	DUAL		HARDWARE	R-PDSO-G5	1	5.5 V	1 mm	1000000 Write/Erase Cycles	.4 MHz	1.6 mm	Not Qualified	5 ms	I2C	4096 bit	1.7 V			e4	30	260	.000001 Amp	2.9 mm
BR24H256FVM-5ACTR	ROHM	EEPROM	AUTOMOTIVE	8	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		32768 words			8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH					.65 mm	125 Cel			32KX8	32K	-40 Cel			DUAL			R-PDSO-G8		5.5 V	.9 mm		1 MHz	2.8 mm		3.5 ms	I2C	262144 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED		2.9 mm
BR24G01FVM-3AGTTR	ROHM	EEPROM	INDUSTRIAL	8	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		128 words			8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH					.65 mm	85 Cel			128X8	128	-40 Cel			DUAL			R-PDSO-G8		5.5 V	.9 mm		1 MHz	2.8 mm		5 ms	I2C	1024 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED		2.9 mm
AT24CS08-STUM-T	Microchip Technology	EEPROM	INDUSTRIAL	5	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	1024 words	5	1.8/5	8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSOP5/6,.11,37		EEPROMs	100	.95 mm	85 Cel		OPEN-DRAIN	1KX8	1K	-40 Cel	MATTE TIN	1010DDDR	DUAL	1	HARDWARE	R-PDSO-G5		5.5 V	1 mm	1000000 Write/Erase Cycles	1 MHz	1.6 mm	Not Qualified	5 ms	I2C	8192 bit	2.5 V	1.7V TO 2.5V @ 0.4MHz		e3			.000006 Amp	2.9 mm	5
CAT24AA04TDI-GT3	Onsemi	EEPROM	INDUSTRIAL	5	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1 mA	512 words	1.8	1.8/5	8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSOP5/6,.11,37		EEPROMs	100	.95 mm	85 Cel			512X8	512	-40 Cel	NICKEL PALLADIUM GOLD	101000MR	DUAL		HARDWARE	R-PDSO-G5	1	5.5 V	1 mm	1000000 Write/Erase Cycles	.4 MHz	1.6 mm	Not Qualified	5 ms	I2C	4096 bit	1.7 V			e4	30	260	.000001 Amp	2.9 mm
AT24CS16-STUM-T	Microchip Technology	EEPROM	INDUSTRIAL	6	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	2048 words	5	1.8/5	8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSOP5/6,.11,37		EEPROMs	100	.95 mm	85 Cel	NO		2048X8	2048	-40 Cel	MATTE TIN	1010MMMR	DUAL	1	HARDWARE	R-PDSO-G6		5.5 V	1 mm	1000000 Write/Erase Cycles	1 MHz	1.6 mm	Not Qualified	5 ms	I2C	16384 bit	1.7 V			e3			.000001 Amp	2.9 mm	5
CAV25M01VE-GT3	Onsemi	EEPROM	AUTOMOTIVE	8	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		131072 words	5		8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH					.8 mm	125 Cel			128KX8	128K	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)		DUAL			R-PDSO-G8	1	5.5 V	.39 mm		10 MHz	3.9 mm		5 ms	SPI	1048576 bit	2.5 V			e4	NOT SPECIFIED	NOT SPECIFIED		4.9 mm
AT24C08D-STUM-T	Microchip Technology	EEPROM	INDUSTRIAL	5	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1 mA	1024 words	3		8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSOP5/6,.11,37			100	.95 mm	85 Cel		OPEN-DRAIN	1KX8	1K	-40 Cel	MATTE TIN	1010000R	DUAL	1	HARDWARE	R-PDSO-G5		3.6 V	1 mm	1000000 Write/Erase Cycles	1 MHz	1.6 mm		5 ms	I2C	8192 bit	2.5 V	1.7V TO 3.6V @ 0.1MHz AND 1.7V TO 3.6V @ 0.4MHz		e3			.0000008 Amp	2.9 mm	3
AT24CS04-STUM-T	Microchip Technology	EEPROM	INDUSTRIAL	5	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	512 words	2.7	1.8/5	8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSOP5/6,.11,37	1	EEPROMs	100	.95 mm	85 Cel	NO	OPEN-DRAIN	512X8	512	-40 Cel	MATTE TIN	1010000R	DUAL	1	HARDWARE	R-PDSO-G5		5 V	1 mm	1000000 Write/Erase Cycles	1 MHz	1.6 mm	Not Qualified	5 ms	I2C	4096 bit	2.5 V	ALSO OPERATES AT 0.4MHZ AT 1.7MIN SUPPLY		e3			.000001 Amp	2.9 mm	2.7
M95128-RDW6TG	STMicroelectronics	EEPROM	INDUSTRIAL	8	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1 mA	16384 words	2.5	2/5	8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	40	.65 mm	85 Cel			16KX8	16K	-40 Cel	NICKEL PALLADIUM GOLD		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	.65 mm	100000 Write/Erase Cycles	2 MHz	3 mm	Not Qualified	5 ms	SPI	131072 bit	1.8 V			e4			.0000005 Amp	4.4 mm
BR24G08FVM-3AGTTR	ROHM	EEPROM	INDUSTRIAL	8	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		1024 words	2.5		8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH					.65 mm	85 Cel			1KX8	1K	-40 Cel			DUAL			R-PDSO-G8		5.5 V	.9 mm		1 MHz	2.8 mm		5 ms	I2C	8192 bit	1.7 V	IT ALSO OPERATES AT 0.4MHZ AT 1.6MIN			NOT SPECIFIED	NOT SPECIFIED		2.9 mm
BR24G64FVM-5TR	ROHM	EEPROM	INDUSTRIAL	8	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		8192 words	2.5		8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH					.65 mm	85 Cel			8KX8	8K	-40 Cel			DUAL			R-PDSO-G8		5.5 V	.9 mm		1 MHz	2.8 mm		5 ms	I2C	65536 bit	1.6 V				NOT SPECIFIED	NOT SPECIFIED		2.9 mm
BR24H64FVM-5ACTR	ROHM	EEPROM		8	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	2 mA	8192 words	2.5		8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSSOP8,.16			50	.65 mm	125 Cel		3-STATE	8KX8	8K	-40 Cel		1010DDDR	DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	.9 mm	4000000 Write/Erase Cycles	1 MHz	2.8 mm		3.5 ms	I2C	65536 bit	1.7 V						.00001 Amp	2.9 mm	2.5
BR25H160FVM-2CTR	ROHM	EEPROM	AUTOMOTIVE	8	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	4 mA	2048 words	5	3/5	8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSSOP8,.16		EEPROMs	100	.65 mm	125 Cel			2KX8	2K	-40 Cel			DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	.9 mm	1000000 Write/Erase Cycles	10 MHz	2.8 mm	Not Qualified	4 ms	SPI	16384 bit	4.5 V	ALSO OPERATES AT 2.5V WITH 5MHZ			NOT SPECIFIED	NOT SPECIFIED	.00001 Amp	2.9 mm
BR24G02FVM-3GTTR	ROHM	EEPROM	INDUSTRIAL	8	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	256 words	2.5		8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSSOP8,.16			40	.65 mm	85 Cel		3-STATE	256X8	256	-40 Cel		1010DDDR	DUAL		HARDWARE	R-PDSO-G8		5.5 V	.9 mm	1000000 Write/Erase Cycles	.4 MHz	2.8 mm		5 ms	I2C	2048 bit	1.6 V				NOT SPECIFIED	NOT SPECIFIED	.000002 Amp	2.9 mm	2.5
BR24G04FVM-3AGTTR	ROHM	EEPROM	INDUSTRIAL	8	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		512 words	2.5		8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH					.65 mm	85 Cel			512X8	512	-40 Cel			DUAL			R-PDSO-G8		5.5 V	.9 mm		1 MHz	2.8 mm		5 ms	I2C	4096 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED		2.9 mm
BR24G128FVM-3AGTTR	ROHM	EEPROM	INDUSTRIAL	8	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		16384 words			8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH					.65 mm	85 Cel			16KX8	16K	-40 Cel			DUAL			R-PDSO-G8		5.5 V	.9 mm		1 MHz	2.8 mm		5 ms	I2C	131072 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED		2.9 mm
BR24G32FVM-3AGTTR	ROHM	EEPROM	INDUSTRIAL	8	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		4096 words			8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH					.65 mm	85 Cel			4KX8	4K	-40 Cel	TIN		DUAL			R-PDSO-G8		5.5 V	.9 mm		.4 MHz	2.8 mm		5 ms	I2C	32768 bit	1.6 V			e3				2.9 mm
BR24G64FVM-3AGTTR	ROHM	EEPROM	INDUSTRIAL	8	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		8192 words			8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH					.65 mm	85 Cel			8KX8	8K	-40 Cel			DUAL			R-PDSO-G8		5.5 V	.9 mm		1 MHz	2.8 mm		5 ms	I2C	65536 bit	1.7 V	1.6V-5.5V OPERATES WITH 0.4MHZ			NOT SPECIFIED	NOT SPECIFIED		2.9 mm
BR24G64FVM-3GTTR	ROHM	EEPROM	INDUSTRIAL	8	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	8192 words	2.5		8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSSOP8,.16			40	.65 mm	85 Cel		3-STATE	8KX8	8K	-40 Cel		1010DDDR	DUAL		HARDWARE	R-PDSO-G8		5.5 V	.9 mm	1000000 Write/Erase Cycles	.4 MHz	2.8 mm		5 ms	I2C	65536 bit	1.6 V				NOT SPECIFIED	NOT SPECIFIED	.000002 Amp	2.9 mm	2.5
BR24T16FVM-WTR	ROHM	EEPROM	INDUSTRIAL	8	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	2048 words	2.5	1.8/5	8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSSOP8,.16	1	EEPROMs	40	.65 mm	85 Cel		3-STATE	2KX8	2K	-40 Cel	MATTE TIN	1010MMMR	DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	.9 mm	1000000 Write/Erase Cycles	.4 MHz	2.8 mm	Not Qualified	5 ms	I2C	16384 bit	1.6 V			e3			.000002 Amp	2.9 mm	2.5
BR93H46RFVM-2CTR	ROHM	EEPROM	AUTOMOTIVE	8	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	64 words	4	3/5	16	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSSOP8,.16		EEPROMs	100	.65 mm	125 Cel			64X16	64	-40 Cel			DUAL		SOFTWARE	R-PDSO-G8		5.5 V	.9 mm	1000000 Write/Erase Cycles	2 MHz	2.8 mm	Not Qualified	4 ms	MICROWIRE	1024 bit	2.5 V				NOT SPECIFIED	NOT SPECIFIED	.00001 Amp	2.9 mm
TC9WMB1FK	Toshiba	EEPROM	INDUSTRIAL	8	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	128 words	2.3	2/5	8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSSOP8,.12,20		EEPROMs	10	.5 mm	85 Cel			128X8	128	-40 Cel	TIN LEAD	1010XXXR	DUAL		HARDWARE	R-PDSO-G8		5.5 V	.8 mm	100000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	12 ms	I2C	1024 bit	1.8 V			e0			.000005 Amp	2.3 mm

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.