Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Package Shape | Total Dose (V) | Package Body Material | Surface Mount | No. of Functions | Technology | Screening Level | Terminal Form | Parallel or Serial | Operating Mode | Sector Size (Words) | Maximum Supply Current | No. of Words | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Toggle Bit | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Minimum Data Retention Time | Terminal Pitch | Maximum Operating Temperature | Reverse Pinout | Output Characteristics | Organization | No. of Words Code | Minimum Operating Temperature | No. of Sectors/Size | Command User Interface | Terminal Finish | I2C Control Byte | Ready or Busy | Terminal Position | No. of Ports | Write Protection | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Endurance | Maximum Clock Frequency (fCLK) | Width | Qualification | Maximum Write Cycle Time (tWC) | Serial Bus Type | Boot Block | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | Page Size (words) | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Type | Maximum Standby Current | Length | Common Flash Interface | Maximum Access Time | Programming Voltage (V) | Data Polling |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
STMicroelectronics |
EEPROM |
OTHER |
DIE |
UNSPECIFIED |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
ASYNCHRONOUS |
128 words |
3 |
32 |
UNCASED CHIP |
85 Cel |
128X32 |
128 |
-20 Cel |
UPPER |
X-XUUC-N |
3.5 V |
5 ms |
4096 bit |
2.5 V |
3 |
|||||||||||||||||||||||||||||||||||||||||||
STMicroelectronics |
EEPROM |
COMMERCIAL |
UNSPECIFIED |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
SYNCHRONOUS |
256 words |
5 |
8 |
UNCASED CHIP |
70 Cel |
256X8 |
256 |
0 Cel |
UPPER |
X-XUUC-N |
5.5 V |
.1 MHz |
Not Qualified |
10 ms |
I2C |
2048 bit |
3 V |
||||||||||||||||||||||||||||||||||||||||||
STMicroelectronics |
EEPROM |
COMMERCIAL |
DIE |
UNSPECIFIED |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
SYNCHRONOUS |
4096 words |
3.3 |
1 |
UNCASED CHIP |
70 Cel |
4KX1 |
4K |
0 Cel |
UPPER |
X-XUUC-N |
5.5 V |
.4 MHz |
Not Qualified |
10 ms |
I2C |
4096 bit |
2.5 V |
|||||||||||||||||||||||||||||||||||||||||
|
STMicroelectronics |
EEPROM |
6 |
DIE |
UNSPECIFIED |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
SYNCHRONOUS |
34 words |
5 |
8 |
UNCASED CHIP |
34X8 |
34 |
UPPER |
X-XUUC-N6 |
Not Qualified |
5 ms |
I2C |
272 bit |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||||||||||||||
|
STMicroelectronics |
EEPROM |
5 |
UNSPECIFIED |
UNSPECIFIED |
NO |
1 |
CMOS |
UNSPECIFIED |
SERIAL |
SYNCHRONOUS |
34 words |
5 |
8 |
MICROELECTRONIC ASSEMBLY |
34X8 |
34 |
GOLD |
UNSPECIFIED |
X-XXMA-X5 |
Not Qualified |
5 ms |
I2C |
272 bit |
e4 |
||||||||||||||||||||||||||||||||||||||||||||
STMicroelectronics |
EEPROM |
COMMERCIAL |
UNSPECIFIED |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
SYNCHRONOUS |
256 words |
5 |
8 |
UNCASED CHIP |
70 Cel |
256X8 |
256 |
0 Cel |
UPPER |
X-XUUC-N |
5.5 V |
.1 MHz |
Not Qualified |
10 ms |
I2C |
2048 bit |
3 V |
||||||||||||||||||||||||||||||||||||||||||
STMicroelectronics |
EEPROM |
COMMERCIAL |
UNSPECIFIED |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
SYNCHRONOUS |
256 words |
5 |
8 |
UNCASED CHIP |
70 Cel |
256X8 |
256 |
0 Cel |
UPPER |
X-XUUC-N |
5.5 V |
.1 MHz |
Not Qualified |
10 ms |
I2C |
2048 bit |
3 V |
||||||||||||||||||||||||||||||||||||||||||
STMicroelectronics |
EEPROM |
OTHER |
DIE |
UNSPECIFIED |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
ASYNCHRONOUS |
64 words |
3 |
32 |
UNCASED CHIP |
85 Cel |
64X32 |
64 |
-20 Cel |
UPPER |
X-XUUC-N |
3.5 V |
5 ms |
2048 bit |
2.5 V |
3 |
|||||||||||||||||||||||||||||||||||||||||||
STMicroelectronics |
EEPROM |
COMMERCIAL |
UNSPECIFIED |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
SYNCHRONOUS |
256 words |
5 |
8 |
UNCASED CHIP |
70 Cel |
256X8 |
256 |
0 Cel |
UPPER |
X-XUUC-N |
5.5 V |
.1 MHz |
Not Qualified |
10 ms |
I2C |
2048 bit |
3 V |
||||||||||||||||||||||||||||||||||||||||||
STMicroelectronics |
EEPROM |
COMMERCIAL |
DIE |
UNSPECIFIED |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
SYNCHRONOUS |
32768 words |
3.3 |
1 |
UNCASED CHIP |
70 Cel |
32KX1 |
32K |
0 Cel |
UPPER |
X-XUUC-N |
5.5 V |
.4 MHz |
Not Qualified |
10 ms |
I2C |
32768 bit |
2.5 V |
|||||||||||||||||||||||||||||||||||||||||
|
STMicroelectronics |
EEPROM |
6 |
DIE |
UNSPECIFIED |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
SYNCHRONOUS |
34 words |
5 |
8 |
UNCASED CHIP |
34X8 |
34 |
UPPER |
X-XUUC-N6 |
Not Qualified |
5 ms |
I2C |
272 bit |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||||||||||||||
|
STMicroelectronics |
EEPROM |
OTHER |
DIE |
UNSPECIFIED |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
16 words |
3 |
32 |
UNCASED CHIP |
85 Cel |
16X32 |
16 |
-20 Cel |
UPPER |
X-XUUC-N |
3.5 V |
512 bit |
2.5 V |
3 |
|||||||||||||||||||||||||||||||||||||||||||
STMicroelectronics |
EEPROM |
COMMERCIAL |
DIE |
UNSPECIFIED |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
SYNCHRONOUS |
32768 words |
3.3 |
1 |
UNCASED CHIP |
70 Cel |
32KX1 |
32K |
0 Cel |
UPPER |
X-XUUC-N |
5.5 V |
.4 MHz |
Not Qualified |
10 ms |
I2C |
32768 bit |
2.5 V |
|||||||||||||||||||||||||||||||||||||||||
STMicroelectronics |
EEPROM |
COMMERCIAL |
DIE |
UNSPECIFIED |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
SYNCHRONOUS |
16384 words |
3.3 |
1 |
UNCASED CHIP |
70 Cel |
16KX1 |
16K |
0 Cel |
UPPER |
X-XUUC-N |
5.5 V |
.4 MHz |
Not Qualified |
10 ms |
I2C |
16384 bit |
2.5 V |
|||||||||||||||||||||||||||||||||||||||||
STMicroelectronics |
EEPROM |
OTHER |
DIE |
UNSPECIFIED |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
ASYNCHRONOUS |
128 words |
3 |
32 |
UNCASED CHIP |
85 Cel |
128X32 |
128 |
-20 Cel |
UPPER |
X-XUUC-N |
3.5 V |
5 ms |
4096 bit |
2.5 V |
3 |
|||||||||||||||||||||||||||||||||||||||||||
STMicroelectronics |
EEPROM |
OTHER |
DIE |
UNSPECIFIED |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
32 words |
32 |
UNCASED CHIP |
85 Cel |
32X32 |
32 |
-20 Cel |
UPPER |
X-XUUC-N |
3 V |
1024 bit |
1.5 V |
3 |
|||||||||||||||||||||||||||||||||||||||||||||
STMicroelectronics |
EEPROM |
OTHER |
DIE |
UNSPECIFIED |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
ASYNCHRONOUS |
64 words |
32 |
UNCASED CHIP |
85 Cel |
64X32 |
64 |
-20 Cel |
UPPER |
X-XUUC-N |
3 V |
5.8 ms |
2048 bit |
1.5 V |
3 |
||||||||||||||||||||||||||||||||||||||||||||
STMicroelectronics |
EEPROM |
OTHER |
DIE |
UNSPECIFIED |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
ASYNCHRONOUS |
128 words |
3 |
32 |
UNCASED CHIP |
85 Cel |
128X32 |
128 |
-20 Cel |
UPPER |
X-XUUC-N |
3.5 V |
5 ms |
4096 bit |
2.5 V |
3 |
|||||||||||||||||||||||||||||||||||||||||||
STMicroelectronics |
EEPROM |
5 |
DIE |
UNSPECIFIED |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
PARALLEL |
SYNCHRONOUS |
34 words |
5 |
8 |
UNCASED CHIP |
34X8 |
34 |
UPPER |
X-XUUC-N5 |
Not Qualified |
272 bit |
5 |
|||||||||||||||||||||||||||||||||||||||||||||||
STMicroelectronics |
EEPROM |
OTHER |
DIE |
UNSPECIFIED |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
16 words |
3 |
32 |
UNCASED CHIP |
85 Cel |
16X32 |
16 |
-20 Cel |
UPPER |
X-XUUC-N |
3.5 V |
512 bit |
2.5 V |
3 |
||||||||||||||||||||||||||||||||||||||||||||
|
STMicroelectronics |
EEPROM |
INDUSTRIAL |
DIE |
UNSPECIFIED |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
SYNCHRONOUS |
2.5 mA |
16384 words |
2.5 |
8 |
UNCASED CHIP |
85 Cel |
16KX8 |
16K |
-40 Cel |
UPPER |
X-XUUC-N |
5.5 V |
1 MHz |
5 ms |
I2C |
131072 bit |
1.7 V |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||||||||||||
|
STMicroelectronics |
EEPROM |
INDUSTRIAL |
DIE |
UNSPECIFIED |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
SYNCHRONOUS |
8192 words |
8 |
UNCASED CHIP |
85 Cel |
8KX8 |
8K |
-40 Cel |
UPPER |
X-XUUC-N |
5.5 V |
1 MHz |
5 ms |
I2C |
65536 bit |
1.7 V |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||||||||||||||
STMicroelectronics |
EEPROM |
INDUSTRIAL |
8 |
DIE |
UNSPECIFIED |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
SYNCHRONOUS |
262144 words |
8 |
UNCASED CHIP |
85 Cel |
256KX8 |
256K |
-40 Cel |
UPPER |
X-XUUC-N8 |
5.5 V |
1 MHz |
Not Qualified |
5 ms |
I2C |
2097152 bit |
1.8 V |
900 ns |
||||||||||||||||||||||||||||||||||||||||
STMicroelectronics |
EEPROM |
INDUSTRIAL |
DIE |
UNSPECIFIED |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
SYNCHRONOUS |
128 words |
2.5 |
32 |
UNCASED CHIP |
8 |
85 Cel |
128X32 |
128 |
-40 Cel |
UPPER |
X-XUUC-N |
5.5 V |
.4 MHz |
5 ms |
I2C |
4096 bit |
1.8 V |
|||||||||||||||||||||||||||||||||||||||||
|
STMicroelectronics |
EEPROM |
INDUSTRIAL |
DIE |
UNSPECIFIED |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
SYNCHRONOUS |
65536 words |
8 |
UNCASED CHIP |
85 Cel |
64KX8 |
64K |
-40 Cel |
UPPER |
X-XUUC-N |
5.5 V |
1 MHz |
5 ms |
I2C |
524288 bit |
1.7 V |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||||||||||||||
|
STMicroelectronics |
EEPROM |
INDUSTRIAL |
DIE |
UNSPECIFIED |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
SYNCHRONOUS |
4096 words |
8 |
UNCASED CHIP |
85 Cel |
4KX8 |
4K |
-40 Cel |
UPPER |
X-XUUC-N |
5.5 V |
1 MHz |
5 ms |
I2C |
32768 bit |
1.7 V |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||||||||||||||
|
STMicroelectronics |
EEPROM |
INDUSTRIAL |
DIE |
UNSPECIFIED |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
SYNCHRONOUS |
128 words |
2.5 |
32 |
UNCASED CHIP |
8 |
85 Cel |
128X32 |
128 |
-40 Cel |
UPPER |
X-XUUC-N |
5.5 V |
.4 MHz |
5 ms |
I2C |
4096 bit |
1.8 V |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||||||||||||
|
STMicroelectronics |
EEPROM |
INDUSTRIAL |
DIE |
UNSPECIFIED |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
SYNCHRONOUS |
512 words |
2.5 |
32 |
UNCASED CHIP |
85 Cel |
512X32 |
512 |
-40 Cel |
UPPER |
X-XUUC-N |
5.5 V |
.4 MHz |
5 ms |
I2C |
16384 bit |
1.8 V |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||||||||||
|
STMicroelectronics |
EEPROM |
DIE |
UNSPECIFIED |
UNSPECIFIED |
YES |
1 |
CMOS |
AEC-Q100 |
NO LEAD |
SERIAL |
SYNCHRONOUS |
.04 mA |
2048 words |
2.5 |
32 |
UNCASED CHIP |
8 |
40 |
2KX32 |
2K |
UPPER |
2 |
R-XUUC-N |
5.5 V |
.4 MHz |
5 ms |
I2C |
65536 bit |
1.8 V |
1000000 ENDURANCE CYCLES |
NOT SPECIFIED |
NOT SPECIFIED |
.00001 Amp |
2.5 |
||||||||||||||||||||||||||||||||||
|
STMicroelectronics |
EEPROM |
INDUSTRIAL |
DIE |
UNSPECIFIED |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
SYNCHRONOUS |
2048 words |
2.5 |
32 |
UNCASED CHIP |
8 |
85 Cel |
2KX32 |
2K |
-40 Cel |
UPPER |
X-XUUC-N |
5.5 V |
.4 MHz |
5 ms |
I2C |
65536 bit |
1.8 V |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||||||||||||
|
STMicroelectronics |
EEPROM |
INDUSTRIAL |
DIE |
UNSPECIFIED |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
SYNCHRONOUS |
2.5 mA |
16384 words |
2.5 |
8 |
UNCASED CHIP |
85 Cel |
16KX8 |
16K |
-40 Cel |
UPPER |
X-XUUC-N |
5.5 V |
1 MHz |
5 ms |
I2C |
131072 bit |
1.7 V |
||||||||||||||||||||||||||||||||||||||||
STMicroelectronics |
EEPROM |
DIE |
UNSPECIFIED |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
SYNCHRONOUS |
2048 words |
2.5 |
32 |
UNCASED CHIP |
8 |
2KX32 |
2K |
UPPER |
X-XUUC-N |
5.5 V |
.4 MHz |
5 ms |
I2C |
65536 bit |
1.8 V |
||||||||||||||||||||||||||||||||||||||||||||
NXP Semiconductors |
EEPROM |
INDUSTRIAL |
DIE |
UNSPECIFIED |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
SYNCHRONOUS |
256 words |
5 |
8 |
UNCASED CHIP |
10 |
85 Cel |
256X8 |
256 |
-40 Cel |
UPPER |
X-XUUC-N |
5.5 V |
.052 MHz |
Not Qualified |
2.5 ms |
I2C |
2048 bit |
4.5 V |
100K ERASE/WRITE CYCLES MIN; DATA RETENTION 10 YEARS MIN |
|||||||||||||||||||||||||||||||||||||||
NXP Semiconductors |
EEPROM |
INDUSTRIAL |
DIE |
UNSPECIFIED |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
SYNCHRONOUS |
256 words |
5 |
8 |
UNCASED CHIP |
10 |
85 Cel |
256X8 |
256 |
-40 Cel |
UPPER |
X-XUUC-N |
5.5 V |
.052 MHz |
Not Qualified |
2.5 ms |
I2C |
2048 bit |
4.5 V |
100K ERASE/WRITE CYCLES MIN; DATA RETENTION 10 YEARS MIN |
|||||||||||||||||||||||||||||||||||||||
NXP Semiconductors |
EEPROM |
COMMERCIAL |
UNSPECIFIED |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
SYNCHRONOUS |
256 words |
5 |
8 |
UNCASED CHIP |
10 |
70 Cel |
256X8 |
256 |
0 Cel |
UPPER |
X-XUUC-N |
5.5 V |
.052 MHz |
Not Qualified |
2.5 ms |
I2C |
2048 bit |
4.5 V |
10K ERASE/WRITE CYCLES MIN; DATA RETENTION 10 YEARS MIN |
||||||||||||||||||||||||||||||||||||||||
NXP Semiconductors |
EEPROM |
COMMERCIAL |
UNSPECIFIED |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
SYNCHRONOUS |
256 words |
5 |
8 |
UNCASED CHIP |
10 |
70 Cel |
256X8 |
256 |
0 Cel |
UPPER |
X-XUUC-N |
5.5 V |
.052 MHz |
Not Qualified |
2.5 ms |
I2C |
2048 bit |
4.5 V |
10K ERASE/WRITE CYCLES MIN; DATA RETENTION 10 YEARS MIN |
||||||||||||||||||||||||||||||||||||||||
NXP Semiconductors |
EEPROM |
INDUSTRIAL |
DIE |
UNSPECIFIED |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
SYNCHRONOUS |
256 words |
5 |
8 |
UNCASED CHIP |
10 |
85 Cel |
256X8 |
256 |
-40 Cel |
UPPER |
X-XUUC-N |
5.5 V |
.052 MHz |
Not Qualified |
2.5 ms |
I2C |
2048 bit |
4.5 V |
100K ERASE/WRITE CYCLES MIN; DATA RETENTION 10 YEARS MIN |
|||||||||||||||||||||||||||||||||||||||
NXP Semiconductors |
EEPROM |
COMMERCIAL |
UNSPECIFIED |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
SYNCHRONOUS |
256 words |
5 |
8 |
UNCASED CHIP |
10 |
70 Cel |
256X8 |
256 |
0 Cel |
UPPER |
X-XUUC-N |
5.5 V |
.052 MHz |
Not Qualified |
2.5 ms |
I2C |
2048 bit |
4.5 V |
10K ERASE/WRITE CYCLES MIN; DATA RETENTION 10 YEARS MIN |
||||||||||||||||||||||||||||||||||||||||
Infineon Technologies |
EEPROM |
COMMERCIAL EXTENDED |
DIE |
UNSPECIFIED |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
SYNCHRONOUS |
128 words |
5 |
8 |
UNCASED CHIP |
10 |
80 Cel |
128X8 |
128 |
-35 Cel |
UPPER |
X-XUUC-N |
5.5 V |
100000 Write/Erase Cycles |
Not Qualified |
1024 bit |
4.75 V |
DATA RETENTION => 10 YEARS; ENDURANCE =>100K WRITE/ERASE CYCLES |
5 |
||||||||||||||||||||||||||||||||||||||||
Infineon Technologies |
EEPROM |
COMMERCIAL EXTENDED |
DIE |
UNSPECIFIED |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
SYNCHRONOUS |
64 words |
5 |
8 |
UNCASED CHIP |
10 |
80 Cel |
64X8 |
64 |
-35 Cel |
UPPER |
X-XUUC-N |
5.5 V |
100000 Write/Erase Cycles |
Not Qualified |
512 bit |
4.75 V |
DATA RETENTION => 10 YEARS; ENDURANCE =>100K WRITE/ERASE CYCLES |
5 |
||||||||||||||||||||||||||||||||||||||||
Infineon Technologies |
EEPROM |
COMMERCIAL EXTENDED |
DIE |
UNSPECIFIED |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
SYNCHRONOUS |
10 mA |
256 words |
5 |
5 |
8 |
UNCASED CHIP |
WAFER |
EEPROMs |
10 |
80 Cel |
256X8 |
256 |
-35 Cel |
UPPER |
SOFTWARE |
X-XUUC-N |
5.5 V |
10000 Write/Erase Cycles |
Not Qualified |
I2C |
2048 bit |
4.75 V |
DATA RETENTION => 10 YEARS; ENDURANCE =>100K WRITE/ERASE CYCLES |
.01 Amp |
||||||||||||||||||||||||||||||||||
Infineon Technologies |
EEPROM |
COMMERCIAL EXTENDED |
DIE |
UNSPECIFIED |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
SYNCHRONOUS |
10 mA |
256 words |
5 |
5 |
8 |
UNCASED CHIP |
WAFER |
EEPROMs |
10 |
80 Cel |
256X8 |
256 |
-35 Cel |
UPPER |
SOFTWARE |
X-XUUC-N |
5.5 V |
10000 Write/Erase Cycles |
Not Qualified |
I2C |
2048 bit |
4.75 V |
DATA RETENTION => 10 YEARS; ENDURANCE =>100K WRITE/ERASE CYCLES |
.01 Amp |
||||||||||||||||||||||||||||||||||
Toshiba |
EEPROM |
COMMERCIAL |
22 |
UNSPECIFIED |
UNSPECIFIED |
NO |
1 |
CMOS |
UNSPECIFIED |
PARALLEL |
ASYNCHRONOUS |
8388608 words |
3.3 |
8 |
MICROELECTRONIC ASSEMBLY |
55 Cel |
8MX8 |
8M |
0 Cel |
TIN LEAD |
UNSPECIFIED |
X-XXMA-X22 |
3.6 V |
Not Qualified |
67108864 bit |
3 V |
e0 |
35 ns |
3 |
||||||||||||||||||||||||||||||||||||||||
Toshiba |
EEPROM |
COMMERCIAL |
22 |
UNSPECIFIED |
UNSPECIFIED |
NO |
1 |
CMOS |
UNSPECIFIED |
SERIAL |
ASYNCHRONOUS |
8388608 words |
3.3 |
8 |
MICROELECTRONIC ASSEMBLY |
55 Cel |
8MX8 |
8M |
0 Cel |
TIN LEAD |
UNSPECIFIED |
X-XXMA-X22 |
3.6 V |
Not Qualified |
67108864 bit |
3 V |
e0 |
3 |
|||||||||||||||||||||||||||||||||||||||||
Renesas Electronics |
EEPROM |
DIE |
UNSPECIFIED |
UNSPECIFIED |
NO |
1 |
CMOS |
UNSPECIFIED |
PARALLEL |
ASYNCHRONOUS |
50 mA |
131072 words |
5 |
YES |
8 |
UNCASED CHIP |
DIE OR CHIP |
100 |
175 Cel |
NO |
3-STATE |
128KX8 |
128K |
-40 Cel |
UPPER |
X-XUUC-N |
5.5 V |
100000 Write/Erase Cycles |
10 ms |
1048576 bit |
4.5 V |
LG_MAX |
256 |
.0005 Amp |
5 |
YES |
|||||||||||||||||||||||||||||||||
Samsung |
EEPROM |
COMMERCIAL |
8 |
DIE |
UNSPECIFIED |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
SYNCHRONOUS |
128 words |
5 |
8 |
UNCASED CHIP |
70 Cel |
3-STATE |
128X8 |
128 |
-20 Cel |
UPPER |
X-XUUC-N8 |
5.5 V |
4.9152 MHz |
Not Qualified |
10 ms |
I2C |
1024 bit |
4.5 V |
|||||||||||||||||||||||||||||||||||||||
Samsung |
EEPROM |
INDUSTRIAL |
8 |
DIE |
UNSPECIFIED |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
SYNCHRONOUS |
16384 words |
3.3 |
1 |
UNCASED CHIP |
85 Cel |
16KX1 |
16K |
-40 Cel |
UPPER |
X-XUUC-N8 |
5.5 V |
.4 MHz |
Not Qualified |
5 ms |
I2C |
16384 bit |
2 V |
||||||||||||||||||||||||||||||||||||||||
Samsung |
EEPROM |
OTHER |
8 |
DIE |
UNSPECIFIED |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
SYNCHRONOUS |
16384 words |
3.3 |
1 |
UNCASED CHIP |
70 Cel |
16KX1 |
16K |
-25 Cel |
UPPER |
X-XUUC-N8 |
5.5 V |
.4 MHz |
Not Qualified |
5 ms |
I2C |
16384 bit |
2 V |
EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.
EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.
One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.
EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.
One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.