COMMERCIAL EEPROM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Command User Interface	Terminal Finish	I2C Control Byte	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
CAT24WC02J-TE13REV-E	Onsemi	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		3 mA	256 words			3/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	70 Cel	256X8	256			1010DDDR	DUAL		HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	2048 bit							.000001 Amp
CAT25C33U14-TE13	Onsemi	EEPROM	COMMERCIAL	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	10 mA	4096 words	5		3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP14,.25	EEPROMs	100	.65 mm	70 Cel	4KX8	4K		TIN LEAD		DUAL		HARDWARE/SOFTWARE	R-PDSO-G14		6 V	1.2 mm	1000000 Write/Erase Cycles	3 MHz	4.4 mm	Not Qualified	10 ms	SPI	32768 bit	2.5 V			e0				5 mm
CAT28LV65HT-25TE13	Onsemi	EEPROM	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		8192 words	3.3			8	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel	8KX8	8K		TIN LEAD		DUAL			R-PDSO-G32	2A	3.6 V	1.2 mm			8 mm	Not Qualified			65536 bit	3 V			e0				18.4 mm	250 ns	3
CAT28LV256T13-30TE13	Onsemi	EEPROM	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words	3.3			8	SMALL OUTLINE, THIN PROFILE				.55 mm	70 Cel	32KX8	32K		TIN LEAD		DUAL			R-PDSO-G28	2	3.6 V	1.2 mm			8 mm	Not Qualified			262144 bit	3 V			e0				11.8 mm	300 ns	3
CAT25C09GL-1.8	Onsemi	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		1024 words	2.5			8	IN-LINE				2.54 mm	70 Cel	1KX8	1K		NICKEL PALLADIUM GOLD		DUAL			R-PDIP-T8		6 V	4.57 mm		1 MHz	7.62 mm	Not Qualified	10 ms	SPI	8192 bit	1.8 V			e4				9.59 mm
CAT24WC02W-1.8REV-F	Onsemi	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		3 mA	256 words			2/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	70 Cel	256X8	256			1010DDDR	DUAL		HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	2048 bit							.000001 Amp
CAT24WC01GY-1.8REV-E	Onsemi	EEPROM	COMMERCIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		3 mA	128 words			2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	100	.635 mm	70 Cel	128X8	128			1010DDDR	DUAL		HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	1024 bit							.000001 Amp
CAT24WC01PAREV-E	Onsemi	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL		3 mA	128 words			3/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	70 Cel	128X8	128			1010DDDR	DUAL		HARDWARE	R-PDIP-T8				1000000 Write/Erase Cycles			Not Qualified		I2C	1024 bit							.000001 Amp
CAT28C65BHK-15TE13	Onsemi	EEPROM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		8192 words	5			8	SMALL OUTLINE				1.27 mm	70 Cel	8KX8	8K		TIN LEAD		DUAL			R-PDSO-G28	1	5.5 V	2.65 mm			7.5 mm	Not Qualified			65536 bit	4.5 V			e0				17.9 mm	150 ns	5
CAT28C65BG-20	Onsemi	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		8192 words	5			8	CHIP CARRIER				1.27 mm	70 Cel	8KX8	8K		MATTE TIN		QUAD			R-PQCC-J32	3	5.5 V	3.55 mm			11.43 mm	Not Qualified			65536 bit	4.5 V	AUTOMATIC WRITE; PAGE WRITE		e3				13.97 mm	200 ns	5
CAT24AC128J-1.8TE13	Onsemi	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	16384 words	3		2/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	70 Cel	16KX8	16K		TIN LEAD	1010DDDR	DUAL		HARDWARE	R-PDSO-G8		6 V	1.75 mm	1000000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	5 ms	I2C	131072 bit	1.8 V			e0			.000001 Amp	4.9 mm
CAT28LV256T13-30TE7	Onsemi	EEPROM	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words	3.3			8	SMALL OUTLINE, THIN PROFILE				.55 mm	70 Cel	32KX8	32K		TIN LEAD		DUAL			R-PDSO-G28	2	3.6 V	1.2 mm			8 mm	Not Qualified			262144 bit	3 V			e0				11.8 mm	300 ns	3
CAT28LV64J-15	Onsemi	EEPROM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8 mA	8192 words	3.3	YES	3.3	8	SMALL OUTLINE	SOP28,.4	EEPROMs		1.27 mm	70 Cel	8KX8	8K	NO			DUAL			R-PDSO-G28	1	3.6 V	2.65 mm	100000 Write/Erase Cycles		7.5 mm	Not Qualified	5 ms		65536 bit	3 V		32				.0001 Amp	17.9 mm	150 ns	3	YES
CAT28C64BHFT13-20TE13	Onsemi	EEPROM	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		8192 words	5			8	SMALL OUTLINE, THIN PROFILE				.55 mm	70 Cel	8KX8	8K		TIN LEAD		DUAL			R-PDSO-G28	2	5.5 V	1.2 mm			8 mm	Not Qualified			65536 bit	4.5 V			e0				11.8 mm	200 ns	5
CAT24WC03Y-TE13	Onsemi	EEPROM	COMMERCIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	3		3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	100	.65 mm	70 Cel	256X8	256		MATTE TIN	1010DDDR	DUAL		HARDWARE	R-PDSO-G8		6 V	1.1 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	10 ms	I2C	2048 bit	2.5 V			e3			.0000009 Amp	4.4 mm
CAT28LV64K-25T	Onsemi	EEPROM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8 mA	8192 words	3.3	YES	3.3	8	SMALL OUTLINE	SOP28,.4	EEPROMs		1.27 mm	70 Cel	8KX8	8K	NO			DUAL			R-PDSO-G28	1	3.6 V	2.65 mm	100000 Write/Erase Cycles		7.5 mm	Not Qualified	5 ms		65536 bit	3 V		32				.0001 Amp	17.9 mm	250 ns	3	YES
CAT28C65BHK-15TE7	Onsemi	EEPROM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		8192 words	5			8	SMALL OUTLINE				1.27 mm	70 Cel	8KX8	8K		TIN LEAD		DUAL			R-PDSO-G28	1	5.5 V	2.65 mm			7.5 mm	Not Qualified			65536 bit	4.5 V			e0				17.9 mm	150 ns	5
CAT28LV64T13-25TE13	Onsemi	EEPROM	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		8192 words	3.3			8	SMALL OUTLINE, THIN PROFILE				.55 mm	70 Cel	8KX8	8K		TIN LEAD		DUAL			R-PDSO-G28	2	3.6 V	1.2 mm			8 mm	Not Qualified			65536 bit	3 V			e0				11.8 mm	250 ns	3
CAT25010GY-1.8TE13REV-C	Onsemi	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		128 words	5			8	SMALL OUTLINE					70 Cel	128X8	128		NICKEL PALLADIUM GOLD		DUAL			R-PDSO-G8	1	5.5 V			1 MHz		Not Qualified	5 ms	SPI	1024 bit	1.8 V			e4
CAT28LV256HT13-35TE7	Onsemi	EEPROM	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words	3.3			8	SMALL OUTLINE, THIN PROFILE				.55 mm	70 Cel	32KX8	32K		TIN LEAD		DUAL			R-PDSO-G28	2	3.6 V	1.2 mm			8 mm	Not Qualified			262144 bit	3 V			e0				11.8 mm	350 ns	3
CAT24WC128L-1.8	Onsemi	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	16384 words	5			8	IN-LINE	DIP8,.3		100	2.54 mm	70 Cel	16KX8	16K			1010XXXR	DUAL		HARDWARE	R-PDIP-T8		6 V	4.57 mm	100000 Write/Erase Cycles	.1 MHz	7.62 mm		10 ms	I2C	131072 bit	1.8 V						.000001 Amp	9.59 mm		5
CAT24WC01UAREV-F	Onsemi	EEPROM	COMMERCIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		3 mA	128 words			3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	100	.635 mm	70 Cel	128X8	128			1010DDDR	DUAL		HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	1024 bit							.000001 Amp
CAT25C33Y14	Onsemi	EEPROM	COMMERCIAL	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	10 mA	4096 words	5		3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP14,.25	EEPROMs	100	.65 mm	70 Cel	4KX8	4K		MATTE TIN		DUAL		HARDWARE/SOFTWARE	R-PDSO-G14		6 V	1.2 mm	1000000 Write/Erase Cycles	3 MHz	4.4 mm	Not Qualified	10 ms	SPI	32768 bit	2.5 V			e3				5 mm
CAT28C64BHFT-12TE7	Onsemi	EEPROM	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		8192 words	5			8	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel	8KX8	8K		TIN LEAD		DUAL			R-PDSO-G32	2A	5.5 V	1.2 mm			8 mm	Not Qualified			65536 bit	4.5 V			e0				18.4 mm	120 ns	5
CAT25C33L-1.8	Onsemi	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	10 mA	4096 words	5		2/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	70 Cel	4KX8	4K		MATTE TIN		DUAL		HARDWARE/SOFTWARE	R-PDIP-T8		6 V	4.57 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified	10 ms	SPI	32768 bit	1.8 V			e3				9.59 mm
CAT28C256H1315	Onsemi	EEPROM	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	EEPROMs		.55 mm	70 Cel	32KX8	32K	NO	TIN		DUAL			R-PDSO-G28		5.5 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified	5 ms		262144 bit	4.5 V		64	e3		260	.00015 Amp	11.8 mm	150 ns	5	YES
CAT24WC16J-TE13REV-F	Onsemi	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		3 mA	2048 words			3/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	70 Cel	2KX8	2K			1010MMMR	DUAL		HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	16384 bit							.000001 Amp
CAT24WC256X-1.8	Onsemi	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		3 mA	32768 words			2/5	8	SMALL OUTLINE	SOP8,.3	EEPROMs	100	1.27 mm	70 Cel	32KX8	32K			10100DDR	DUAL		HARDWARE	R-PDSO-G8				100000 Write/Erase Cycles			Not Qualified		I2C	262144 bit							.000001 Amp
CAT28C64BFN-20TE7	Onsemi	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		8192 words	5			8	CHIP CARRIER				1.27 mm	70 Cel	8KX8	8K		TIN LEAD		QUAD			R-PQCC-J32	3	5.5 V	3.55 mm			11.43 mm	Not Qualified			65536 bit	4.5 V			e0				13.97 mm	200 ns	5
CAT25C17GY-1.8	Onsemi	EEPROM	COMMERCIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		2048 words	2.5			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	70 Cel	2KX8	2K		NICKEL PALLADIUM GOLD		DUAL			R-PDSO-G8		6 V	1.2 mm		1 MHz	3 mm	Not Qualified	10 ms	SPI	16384 bit	1.8 V			e4				4.4 mm
CAT24WC257W-3TE13	Onsemi	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	32768 words	5			8	SMALL OUTLINE	SOP8,.25		100	1.27 mm	70 Cel	32KX8	32K			10100DDR	DUAL	1	HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	100000 Write/Erase Cycles	1 MHz	3.9 mm		10 ms	I2C	262144 bit	3 V						.000001 Amp	4.9 mm
CAT24WC64W-1.8TE13	Onsemi	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words				8	SMALL OUTLINE	SOP8,.25		100	1.27 mm	70 Cel	8KX8	8K			1010DDDR	DUAL		HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.1 MHz	3.9 mm		10 ms	I2C	65536 bit	1.8 V						.000001 Amp	4.9 mm
CAT25020S-1.8	Onsemi	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		256 words	5			8	SMALL OUTLINE				1.27 mm	70 Cel	256X8	256		TIN LEAD		DUAL			R-PDSO-G8		6 V	1.75 mm		1 MHz	3.9 mm	Not Qualified	5 ms	SPI	2048 bit	1.8 V			e0				4.9 mm
CAT28LV64G-25TE13	Onsemi	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		8192 words	3.3			8	CHIP CARRIER				1.27 mm	70 Cel	8KX8	8K		MATTE TIN		QUAD			R-PQCC-J32	3	3.6 V	3.55 mm			11.43 mm	Not Qualified			65536 bit	3 V			e3				13.97 mm	250 ns	3
CAT28C65BK-12TE7	Onsemi	EEPROM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		8192 words	5			8	SMALL OUTLINE				1.27 mm	70 Cel	8KX8	8K		TIN LEAD		DUAL			R-PDSO-G28	1	5.5 V	2.65 mm			7.5 mm	Not Qualified			65536 bit	4.5 V			e0				17.9 mm	120 ns	5
CAT28C17AX-20TE7	Onsemi	EEPROM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		2048 words	5			8	SMALL OUTLINE				1.27 mm	70 Cel	2KX8	2K		MATTE TIN		DUAL			R-PDSO-G28	1	5.5 V	2.65 mm			7.5 mm	Not Qualified			16384 bit	4.5 V			e3				17.9 mm	200 ns	5
CAT28LV256HN-30TE13	Onsemi	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		32768 words	3.3			8	CHIP CARRIER				1.27 mm	70 Cel	32KX8	32K		TIN LEAD		QUAD			R-PQCC-J32	3	3.6 V	3.55 mm			11.43 mm	Not Qualified			262144 bit	3 V			e0				13.97 mm	300 ns	3
CAT24C01BGL	Onsemi	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL		3 mA	128 words			3/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	70 Cel	128X8	128				DUAL			R-PDIP-T8				1000000 Write/Erase Cycles			Not Qualified			1024 bit							.000001 Amp
CAT25020R-1.8TE13	Onsemi	EEPROM	COMMERCIAL	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		256 words	5			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	70 Cel	256X8	256		TIN LEAD		DUAL			S-PDSO-G8	1	6 V	1.1 mm		1 MHz	3 mm	Not Qualified	5 ms	SPI	2048 bit	1.8 V			e0				3 mm
CAT28C64BHFJ-12TE13	Onsemi	EEPROM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		8192 words	5			8	SMALL OUTLINE				1.27 mm	70 Cel	8KX8	8K		TIN LEAD		DUAL			R-PDSO-G28	1	5.5 V	2.65 mm			7.5 mm	Not Qualified			65536 bit	4.5 V			e0				17.9 mm	120 ns	5
CAT25C64S-TE13	Onsemi	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		8192 words	5			8	SMALL OUTLINE					70 Cel	8KX8	8K				DUAL			R-PDSO-G8		6 V			3 MHz			10 ms	SPI	65536 bit	2.5 V
CAT28C16AP-12	Onsemi	EEPROM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	35 mA	2048 words	5	NO	5	8	IN-LINE	DIP24,.6	EEPROMs		2.54 mm	70 Cel	2KX8	2K	NO	TIN LEAD		DUAL			R-PDIP-T24		5.5 V	5.08 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified	5 ms		16384 bit	4.5 V			e0			.0001 Amp	31.875 mm	120 ns	5	YES
CAT24WC01U-TE13REV-E	Onsemi	EEPROM	COMMERCIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		3 mA	128 words			3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	100	.635 mm	70 Cel	128X8	128			1010DDDR	DUAL		HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	1024 bit							.000001 Amp
CAT28C65BFT14-15TE7	Onsemi	EEPROM	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		8192 words	5			8	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel	8KX8	8K		TIN LEAD		DUAL			R-PDSO-G32	2A	5.5 V	1.2 mm			8 mm	Not Qualified			65536 bit	4.5 V			e0				12.4 mm	150 ns	5
CAT28LV256HT13-25T	Onsemi	EEPROM	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words	3.3			8	SMALL OUTLINE, THIN PROFILE				.55 mm	70 Cel	32KX8	32K		TIN LEAD		DUAL			R-PDSO-G28	2	3.6 V	1.2 mm			8 mm	Not Qualified			262144 bit	3 V			e0				11.8 mm	250 ns	3
CAT28C64BHJ-12TE13	Onsemi	EEPROM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		8192 words	5			8	SMALL OUTLINE				1.27 mm	70 Cel	8KX8	8K		TIN LEAD		DUAL			R-PDSO-G28	1	5.5 V	2.65 mm			7.5 mm	Not Qualified			65536 bit	4.5 V			e0				17.9 mm	120 ns	5
CAT28C256HFT13-15TE7	Onsemi	EEPROM	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words	5			8	SMALL OUTLINE, THIN PROFILE				.55 mm	70 Cel	32KX8	32K		TIN LEAD		DUAL			R-PDSO-G28	2	5.5 V	1.2 mm			8 mm	Not Qualified			262144 bit	4.5 V			e0				11.8 mm	150 ns	5
CAT28C64BW-90T	Onsemi	EEPROM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	8192 words	5	YES	5	8	SMALL OUTLINE	SOP28,.4	EEPROMs		1.27 mm	70 Cel	8KX8	8K	NO			DUAL			R-PDSO-G28		5.5 V	2.65 mm	100000 Write/Erase Cycles		7.5 mm	Not Qualified	5 ms		65536 bit	4.5 V		32		NOT SPECIFIED	NOT SPECIFIED	.0001 Amp	17.9 mm	90 ns	5	YES

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.