COMMERCIAL EEPROM 2,400+

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Package Shape Total Dose (V) Package Body Material Surface Mount No. of Functions Technology Screening Level Terminal Form Parallel or Serial Operating Mode Sector Size (Words) Maximum Supply Current No. of Words Input/Output Type Nominal Supply Voltage / Vsup (V) Toggle Bit Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Minimum Data Retention Time Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Operating Temperature No. of Sectors/Size Command User Interface Terminal Finish I2C Control Byte Ready or Busy Terminal Position No. of Ports Write Protection JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Endurance Maximum Clock Frequency (fCLK) Width Qualification Maximum Write Cycle Time (tWC) Serial Bus Type Boot Block Memory Density Minimum Supply Voltage (Vsup) Additional Features Page Size (words) JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Type Maximum Standby Current Length Common Flash Interface Maximum Access Time Programming Voltage (V) Data Polling

CAT25040S-TE13

Onsemi

EEPROM

COMMERCIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

512 words

5

8

SMALL OUTLINE

1.27 mm

70 Cel

512X8

512

0 Cel

TIN LEAD

DUAL

R-PDSO-G8

6 V

1.75 mm

5 MHz

3.9 mm

Not Qualified

5 ms

SPI

4096 bit

2.5 V

e0

4.9 mm

CAT25C05U-TE13

Onsemi

EEPROM

COMMERCIAL

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

5 mA

512 words

5

3/5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP8,.25

EEPROMs

100

.65 mm

70 Cel

512X8

512

0 Cel

TIN LEAD

DUAL

HARDWARE/SOFTWARE

R-PDSO-G8

6 V

1.2 mm

1000000 Write/Erase Cycles

5 MHz

3 mm

Not Qualified

5 ms

SPI

4096 bit

2.5 V

e0

4.4 mm

CAT28C512T14-12T

Onsemi

EEPROM

COMMERCIAL

40

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

65536 words

5

8

SMALL OUTLINE, THIN PROFILE

100

.5 mm

70 Cel

64KX8

64K

0 Cel

TIN LEAD

DUAL

R-PDSO-G40

2A

5.5 V

1.2 mm

10 mm

Not Qualified

5 ms

524288 bit

4.5 V

10000 PROGRAM/ERASE CYCLES; DATA RETENTION = 100 YEARS

e0

12.4 mm

120 ns

5

CAT28LV65K-20

Onsemi

EEPROM

COMMERCIAL

28

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

8 mA

8192 words

3.3

YES

3.3

8

SMALL OUTLINE

SOP28,.45

EEPROMs

1.27 mm

70 Cel

8KX8

8K

0 Cel

NO

TIN LEAD

YES

DUAL

R-PDSO-G28

1

3.6 V

2.65 mm

100000 Write/Erase Cycles

7.5 mm

Not Qualified

5 ms

65536 bit

3 V

32

e0

.0001 Amp

17.9 mm

200 ns

3

YES

CAT28C257G-90T

Onsemi

EEPROM

COMMERCIAL

32

QCCJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

32768 words

5

8

CHIP CARRIER

1.27 mm

70 Cel

32KX8

32K

0 Cel

TIN

QUAD

R-PQCC-J32

5.5 V

3.55 mm

11.43 mm

Not Qualified

5 ms

262144 bit

4.5 V

e3

NOT SPECIFIED

260

13.97 mm

90 ns

5

CAT28LV256P-20T

Onsemi

EEPROM

COMMERCIAL

28

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

32768 words

3.3

8

IN-LINE

2.54 mm

70 Cel

32KX8

32K

0 Cel

TIN LEAD

DUAL

R-PDIP-T28

3.6 V

5.08 mm

15.24 mm

Not Qualified

10 ms

262144 bit

3 V

e0

36.695 mm

200 ns

3

CAT28C65BFT13-15TE13

Onsemi

EEPROM

COMMERCIAL

28

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

8192 words

5

8

SMALL OUTLINE, THIN PROFILE

.55 mm

70 Cel

8KX8

8K

0 Cel

TIN LEAD

DUAL

R-PDSO-G28

2

5.5 V

1.2 mm

8 mm

Not Qualified

65536 bit

4.5 V

e0

11.8 mm

150 ns

5

CAT24WC01GLREV-F

Onsemi

EEPROM

COMMERCIAL

8

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

THROUGH-HOLE

SERIAL

3 mA

128 words

3/5

8

IN-LINE

DIP8,.3

EEPROMs

100

2.54 mm

70 Cel

128X8

128

0 Cel

1010DDDR

DUAL

HARDWARE

R-PDIP-T8

1000000 Write/Erase Cycles

Not Qualified

I2C

1024 bit

.000001 Amp

CAT24WC32X

Onsemi

EEPROM

COMMERCIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

3 mA

4096 words

8

SMALL OUTLINE

SOP8,.3

100

1.27 mm

70 Cel

4KX8

4K

0 Cel

1010DDDR

DUAL

HARDWARE

R-PDSO-G8

5.5 V

2.03 mm

1000000 Write/Erase Cycles

.1 MHz

5.25 mm

10 ms

I2C

32768 bit

2.5 V

.000001 Amp

5.3 mm

CAT25C32Y14-1.8

Onsemi

EEPROM

COMMERCIAL

14

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

10 mA

4096 words

5

2/5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP14,.25

EEPROMs

100

.65 mm

70 Cel

4KX8

4K

0 Cel

MATTE TIN

DUAL

HARDWARE/SOFTWARE

R-PDSO-G14

6 V

1.2 mm

1000000 Write/Erase Cycles

1 MHz

4.4 mm

Not Qualified

10 ms

SPI

32768 bit

1.8 V

e3

.000001 Amp

5 mm

CAT28C65BT13-15T

Onsemi

EEPROM

COMMERCIAL

28

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

30 mA

8192 words

5

YES

5

8

SMALL OUTLINE, THIN PROFILE

TSSOP28,.53,22

EEPROMs

100

1.27 mm

70 Cel

8KX8

8K

0 Cel

NO

TIN LEAD

YES

DUAL

R-PDSO-G28

2

5.5 V

1.2 mm

100000 Write/Erase Cycles

8 mm

Not Qualified

5 ms

65536 bit

4.5 V

100000 PROGRAM/ERASE CYCLES; DATA RETENTION = 100 YEARS

32

e0

.0001 Amp

11.8 mm

150 ns

5

YES

CAT28LV256H13-30TE7

Onsemi

EEPROM

COMMERCIAL

28

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

32768 words

3.3

8

SMALL OUTLINE, THIN PROFILE

.55 mm

70 Cel

32KX8

32K

0 Cel

MATTE TIN

DUAL

R-PDSO-G28

2

3.6 V

1.2 mm

8 mm

Not Qualified

262144 bit

3 V

e3

11.8 mm

300 ns

3

CAT24WC03Z-TE13

Onsemi

EEPROM

COMMERCIAL

8

TSSOP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

3 mA

256 words

3

3/5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP8,.19

EEPROMs

100

.65 mm

70 Cel

256X8

256

0 Cel

MATTE TIN

1010DDDR

DUAL

HARDWARE

S-PDSO-G8

6 V

1.1 mm

1000000 Write/Erase Cycles

.4 MHz

3 mm

Not Qualified

10 ms

I2C

2048 bit

2.5 V

e3

.0000009 Amp

3 mm

CAT25020V-1.8TE13

Onsemi

EEPROM

COMMERCIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

256 words

5

8

SMALL OUTLINE

1.27 mm

70 Cel

256X8

256

0 Cel

MATTE TIN

DUAL

R-PDSO-G8

6 V

1.75 mm

1 MHz

3.9 mm

Not Qualified

5 ms

SPI

2048 bit

1.8 V

e3

4.9 mm

CAT28C64BHT-12TE13

Onsemi

EEPROM

COMMERCIAL

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

8192 words

5

8

SMALL OUTLINE, THIN PROFILE

.5 mm

70 Cel

8KX8

8K

0 Cel

TIN LEAD

DUAL

R-PDSO-G32

2A

5.5 V

1.2 mm

8 mm

Not Qualified

65536 bit

4.5 V

e0

18.4 mm

120 ns

5

CAT28C65BHT13-12TE7

Onsemi

EEPROM

COMMERCIAL

28

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

8192 words

5

8

SMALL OUTLINE, THIN PROFILE

.55 mm

70 Cel

8KX8

8K

0 Cel

TIN LEAD

DUAL

R-PDSO-G28

2

5.5 V

1.2 mm

8 mm

Not Qualified

65536 bit

4.5 V

e0

11.8 mm

120 ns

5

CAT28LV64HT14-35TE7

Onsemi

EEPROM

COMMERCIAL

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

8192 words

3.3

8

SMALL OUTLINE, THIN PROFILE

.5 mm

70 Cel

8KX8

8K

0 Cel

TIN LEAD

DUAL

R-PDSO-G32

2A

3.6 V

1.2 mm

8 mm

Not Qualified

65536 bit

3 V

e0

12.4 mm

350 ns

3

CAT24WC64W-TE13

Onsemi

EEPROM

COMMERCIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

3 mA

8192 words

8

SMALL OUTLINE

SOP8,.25

100

1.27 mm

70 Cel

8KX8

8K

0 Cel

1010DDDR

DUAL

HARDWARE

R-PDSO-G8

5.5 V

1.75 mm

1000000 Write/Erase Cycles

.1 MHz

3.9 mm

10 ms

I2C

65536 bit

2.5 V

.000001 Amp

4.9 mm

CAT25010V-1.8TE13REV-C

Onsemi

EEPROM

COMMERCIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

128 words

5

8

SMALL OUTLINE

70 Cel

128X8

128

0 Cel

MATTE TIN

DUAL

R-PDSO-G8

5.5 V

1 MHz

Not Qualified

5 ms

SPI

1024 bit

1.8 V

e3

CAT25C65GV-1.8

Onsemi

EEPROM

COMMERCIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

8192 words

5

8

SMALL OUTLINE

1.27 mm

70 Cel

8KX8

8K

0 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

DUAL

R-PDSO-G8

6 V

1.75 mm

1 MHz

3.9 mm

Not Qualified

10 ms

SPI

65536 bit

1.8 V

e4

40

260

4.9 mm

CAT28C65BFJ-12TE13

Onsemi

EEPROM

COMMERCIAL

28

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

8192 words

5

8

SMALL OUTLINE

1.27 mm

70 Cel

8KX8

8K

0 Cel

TIN LEAD

DUAL

R-PDSO-G28

1

5.5 V

2.65 mm

7.5 mm

Not Qualified

65536 bit

4.5 V

e0

17.9 mm

120 ns

5

CAT28C65BFT-15TE7

Onsemi

EEPROM

COMMERCIAL

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

8192 words

5

8

SMALL OUTLINE, THIN PROFILE

.5 mm

70 Cel

8KX8

8K

0 Cel

TIN LEAD

DUAL

R-PDSO-G32

2A

5.5 V

1.2 mm

8 mm

Not Qualified

65536 bit

4.5 V

e0

18.4 mm

150 ns

5

CAT28LV64K-35

Onsemi

EEPROM

COMMERCIAL

28

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

8192 words

3.3

8

SMALL OUTLINE

1.27 mm

70 Cel

8KX8

8K

0 Cel

TIN LEAD

DUAL

R-PDSO-G28

1

3.6 V

2.65 mm

7.5 mm

Not Qualified

5 ms

65536 bit

3 V

e0

17.9 mm

350 ns

3

CAT28C64BHFT-20TE13

Onsemi

EEPROM

COMMERCIAL

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

8192 words

5

8

SMALL OUTLINE, THIN PROFILE

.5 mm

70 Cel

8KX8

8K

0 Cel

TIN LEAD

DUAL

R-PDSO-G32

2A

5.5 V

1.2 mm

8 mm

Not Qualified

65536 bit

4.5 V

e0

18.4 mm

200 ns

5

CAT25040U-REV-C

Onsemi

EEPROM

COMMERCIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

512 words

5

8

SMALL OUTLINE

70 Cel

512X8

512

0 Cel

TIN LEAD

DUAL

R-PDSO-G8

1

5.5 V

5 MHz

Not Qualified

5 ms

SPI

4096 bit

2.5 V

e0

CAT28LV64N-20

Onsemi

EEPROM

COMMERCIAL

32

QCCJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

8 mA

8192 words

3.3

YES

3.3

8

CHIP CARRIER

LDCC32,.5X.6

EEPROMs

1.27 mm

70 Cel

8KX8

8K

0 Cel

NO

QUAD

R-PQCC-J32

1

3.6 V

3.55 mm

100000 Write/Erase Cycles

11.43 mm

Not Qualified

5 ms

65536 bit

3 V

32

.0001 Amp

13.97 mm

200 ns

3

YES

CAT24WC02Z-TE13REV-E

Onsemi

EEPROM

COMMERCIAL

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

SERIAL

3 mA

256 words

3/5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP8,.19

EEPROMs

100

.635 mm

70 Cel

256X8

256

0 Cel

1010DDDR

DUAL

HARDWARE

R-PDSO-G8

1000000 Write/Erase Cycles

Not Qualified

I2C

2048 bit

.000001 Amp

CAT25040Y-1.8

Onsemi

EEPROM

COMMERCIAL

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

512 words

5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

.65 mm

70 Cel

512X8

512

0 Cel

MATTE TIN

DUAL

R-PDSO-G8

1

6 V

1.2 mm

1 MHz

3 mm

Not Qualified

5 ms

SPI

4096 bit

1.8 V

e3

4.4 mm

CAT28C64BL-20

Onsemi

EEPROM

COMMERCIAL

28

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

8192 words

5

8

IN-LINE

2.54 mm

70 Cel

8KX8

8K

0 Cel

MATTE TIN

DUAL

R-PDIP-T28

5.5 V

5.08 mm

15.24 mm

Not Qualified

65536 bit

4.5 V

AUTOMATIC WRITE; PAGE WRITE

e3

36.703 mm

200 ns

5

CAT28LV65HJ-25TE13

Onsemi

EEPROM

COMMERCIAL

28

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

8192 words

3.3

8

SMALL OUTLINE

1.27 mm

70 Cel

8KX8

8K

0 Cel

TIN LEAD

DUAL

R-PDSO-G28

1

3.6 V

2.65 mm

7.5 mm

Not Qualified

65536 bit

3 V

e0

17.9 mm

250 ns

3

CAT24WC01GW-1.8TE13REV-C

Onsemi

EEPROM

COMMERCIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

SERIAL

3 mA

128 words

2/5

8

SMALL OUTLINE

SOP8,.25

EEPROMs

100

1.27 mm

70 Cel

128X8

128

0 Cel

1010DDDR

DUAL

HARDWARE

R-PDSO-G8

1000000 Write/Erase Cycles

Not Qualified

I2C

1024 bit

.000001 Amp

CAT24WC64W

Onsemi

EEPROM

COMMERCIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

3 mA

8192 words

8

SMALL OUTLINE

SOP8,.25

100

1.27 mm

70 Cel

8KX8

8K

0 Cel

1010DDDR

DUAL

HARDWARE

R-PDSO-G8

5.5 V

1.75 mm

1000000 Write/Erase Cycles

.1 MHz

3.9 mm

10 ms

I2C

65536 bit

2.5 V

.000001 Amp

4.9 mm

CAT28C65BHT14-15TE7

Onsemi

EEPROM

COMMERCIAL

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

8192 words

5

8

SMALL OUTLINE, THIN PROFILE

.5 mm

70 Cel

8KX8

8K

0 Cel

TIN LEAD

DUAL

R-PDSO-G32

2A

5.5 V

1.2 mm

8 mm

Not Qualified

65536 bit

4.5 V

e0

12.4 mm

150 ns

5

CAT28LV64W-20

Onsemi

EEPROM

COMMERCIAL

28

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

8 mA

8192 words

3.3

YES

3.3

8

SMALL OUTLINE

SOP28,.4

EEPROMs

1.27 mm

70 Cel

8KX8

8K

0 Cel

NO

Tin (Sn)

DUAL

R-PDSO-G28

3.6 V

2.65 mm

100000 Write/Erase Cycles

7.5 mm

Not Qualified

5 ms

65536 bit

3 V

32

e3

.0001 Amp

17.9 mm

200 ns

3

YES

CAT24WC01R-1.8REV-C

Onsemi

EEPROM

COMMERCIAL

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

SERIAL

3 mA

128 words

2/5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP8,.19

EEPROMs

100

.635 mm

70 Cel

128X8

128

0 Cel

1010DDDR

DUAL

HARDWARE

R-PDSO-G8

1000000 Write/Erase Cycles

Not Qualified

I2C

1024 bit

.000001 Amp

CAT24WC32K

Onsemi

EEPROM

COMMERCIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

3 mA

4096 words

8

SMALL OUTLINE

SOP8,.3

100

1.27 mm

70 Cel

4KX8

4K

0 Cel

1010DDDR

DUAL

HARDWARE

R-PDSO-G8

5.5 V

2.03 mm

1000000 Write/Erase Cycles

.1 MHz

5.25 mm

10 ms

I2C

32768 bit

2.5 V

.000001 Amp

5.3 mm

CAT28LV65T-25TE7

Onsemi

EEPROM

COMMERCIAL

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

8192 words

3.3

8

SMALL OUTLINE, THIN PROFILE

.5 mm

70 Cel

8KX8

8K

0 Cel

TIN LEAD

DUAL

R-PDSO-G32

2

3.6 V

1.2 mm

8 mm

Not Qualified

65536 bit

3 V

e0

18.4 mm

250 ns

3

CAT24WC02LREV-E

Onsemi

EEPROM

COMMERCIAL

8

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

THROUGH-HOLE

SERIAL

3 mA

256 words

3/5

8

IN-LINE

DIP8,.3

EEPROMs

100

2.54 mm

70 Cel

256X8

256

0 Cel

1010DDDR

DUAL

HARDWARE

R-PDIP-T8

1000000 Write/Erase Cycles

Not Qualified

I2C

2048 bit

.000001 Amp

CAT24WC01GZEREV-F

Onsemi

EEPROM

COMMERCIAL

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

SERIAL

3 mA

128 words

3/5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP8,.19

EEPROMs

100

.635 mm

70 Cel

128X8

128

0 Cel

1010DDDR

DUAL

HARDWARE

R-PDSO-G8

1000000 Write/Erase Cycles

Not Qualified

I2C

1024 bit

.000001 Amp

CAT25020S-REV-C

Onsemi

EEPROM

COMMERCIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

256 words

5

8

SMALL OUTLINE

70 Cel

256X8

256

0 Cel

TIN LEAD

DUAL

R-PDSO-G8

5.5 V

5 MHz

Not Qualified

5 ms

SPI

2048 bit

2.5 V

e0

CAT28C65BT13-15

Onsemi

EEPROM

COMMERCIAL

28

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

30 mA

8192 words

5

YES

5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP28,.53,22

EEPROMs

.55 mm

70 Cel

8KX8

8K

0 Cel

NO

YES

DUAL

R-PDSO-G28

100000 Write/Erase Cycles

Not Qualified

5 ms

65536 bit

32

.0001 Amp

150 ns

YES

CAT24WC129W

Onsemi

EEPROM

COMMERCIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

3 mA

16384 words

3

3/5

8

SMALL OUTLINE

SOP8,.25

EEPROMs

100

1.27 mm

70 Cel

16KX8

16K

0 Cel

MATTE TIN

1010XXXR

DUAL

HARDWARE

R-PDSO-G8

6 V

1.75 mm

100000 Write/Erase Cycles

.4 MHz

3.9 mm

Not Qualified

10 ms

I2C

131072 bit

2.5 V

e3

.000001 Amp

4.9 mm

CAT28LV65N-25

Onsemi

EEPROM

COMMERCIAL

32

QCCJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

8 mA

8192 words

3.3

YES

3.3

8

CHIP CARRIER

LDCC32,.5X.6

EEPROMs

1.27 mm

70 Cel

8KX8

8K

0 Cel

NO

TIN LEAD

YES

QUAD

R-PQCC-J32

3

3.6 V

3.55 mm

100000 Write/Erase Cycles

11.43 mm

Not Qualified

5 ms

65536 bit

3 V

32

e0

.0001 Amp

13.97 mm

250 ns

3

YES

CAT25010Y-1.8TE13REV-C

Onsemi

EEPROM

COMMERCIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

128 words

5

8

SMALL OUTLINE

70 Cel

128X8

128

0 Cel

MATTE TIN

DUAL

R-PDSO-G8

1

5.5 V

1 MHz

Not Qualified

5 ms

SPI

1024 bit

1.8 V

e3

CAT24C01BU-1.8

Onsemi

EEPROM

COMMERCIAL

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

3 mA

128 words

3

2/5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP8,.25

EEPROMs

100

.65 mm

70 Cel

128X8

128

0 Cel

TIN LEAD

DUAL

R-PDSO-G8

6 V

1.2 mm

1000000 Write/Erase Cycles

.1 MHz

3 mm

Not Qualified

10 ms

I2C

1024 bit

1.8 V

e0

.000001 Amp

4.4 mm

CAT24WC05Z-TE13

Onsemi

EEPROM

COMMERCIAL

8

TSSOP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

3 mA

512 words

3

3/5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP8,.19

EEPROMs

100

.65 mm

70 Cel

512X8

512

0 Cel

MATTE TIN

1010DDMR

DUAL

HARDWARE

S-PDSO-G8

6 V

1.1 mm

1000000 Write/Erase Cycles

.4 MHz

3 mm

Not Qualified

10 ms

I2C

4096 bit

2.5 V

e3

.0000009 Amp

3 mm

CAT28LV64P-25

Onsemi

EEPROM

COMMERCIAL

28

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

8 mA

8192 words

3.3

YES

3.3

8

IN-LINE

DIP28,.6

EEPROMs

2.54 mm

70 Cel

8KX8

8K

0 Cel

NO

DUAL

R-PDIP-T28

1

3.6 V

5.08 mm

100000 Write/Erase Cycles

15.24 mm

Not Qualified

5 ms

65536 bit

3 V

32

.0001 Amp

36.695 mm

250 ns

3

YES

CAT28LV65HT-35TE7

Onsemi

EEPROM

COMMERCIAL

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

8192 words

3.3

8

SMALL OUTLINE, THIN PROFILE

.5 mm

70 Cel

8KX8

8K

0 Cel

TIN LEAD

DUAL

R-PDSO-G32

2A

3.6 V

1.2 mm

8 mm

Not Qualified

65536 bit

3 V

e0

18.4 mm

350 ns

3

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.