COMMERCIAL EXTENDED EEPROM 291

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Memory Width	Package Style (Meter)	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Length
M24C16-RBN5TP	STMicroelectronics	EEPROM	COMMERCIAL EXTENDED	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		2048 words	2.5	8	IN-LINE	2.54 mm	85 Cel	2KX8	2K	-20 Cel	MATTE TIN	DUAL	R-PDIP-T8		5.5 V	5.33 mm	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	16384 bit	1.8 V	e3			9.27 mm
M24C64-WBN5TP/C	STMicroelectronics	EEPROM	COMMERCIAL EXTENDED	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		8192 words	2.7	8	IN-LINE	2.54 mm	85 Cel	8KX8	8K	-20 Cel	MATTE TIN	DUAL	R-PDIP-T8		5.5 V	5.33 mm	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	65536 bit	2.5 V	e3			9.27 mm
M24C32-RDW5T/B	STMicroelectronics	EEPROM	COMMERCIAL EXTENDED	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		4096 words	2.5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	.65 mm	85 Cel	4KX8	4K	-20 Cel	TIN LEAD	DUAL	R-PDSO-G8		5.5 V	1.2 mm	.4 MHz	3 mm	Not Qualified	5 ms	I2C	32768 bit	1.8 V	e0			4.4 mm
M24C128-BWDW5/B	STMicroelectronics	EEPROM	COMMERCIAL EXTENDED	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		16384 words	2.7	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	.65 mm	85 Cel	16KX8	16K	-20 Cel	TIN LEAD	DUAL	R-PDSO-G8		5.5 V	1.2 mm	.4 MHz	3 mm	Not Qualified	5 ms	I2C	131072 bit	2.5 V	e0			4.4 mm
M24C32-RMN5G/B	STMicroelectronics	EEPROM	COMMERCIAL EXTENDED	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		4096 words	2.5	8	SMALL OUTLINE	1.27 mm	85 Cel	4KX8	4K	-20 Cel	NICKEL PALLADIUM GOLD	DUAL	R-PDSO-G8	1	5.5 V	1.75 mm	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	32768 bit	1.8 V	e4			4.9 mm
M24C32-RMB5G/C	STMicroelectronics	EEPROM	COMMERCIAL EXTENDED	8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		4096 words	2.5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	.5 mm	85 Cel	4KX8	4K	-20 Cel		DUAL	R-XDSO-N8		5.5 V	.6 mm	.4 MHz	2 mm	Not Qualified	5 ms	I2C	32768 bit	1.8 V		NOT SPECIFIED	NOT SPECIFIED	3 mm
M24C128-BWMN5TP/B	STMicroelectronics	EEPROM	COMMERCIAL EXTENDED	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	5 mA	16384 words	2.7	8	SMALL OUTLINE	1.27 mm	85 Cel	16KX8	16K	-20 Cel	NICKEL PALLADIUM GOLD	DUAL	R-PDSO-G8	1	5.5 V	1.75 mm	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	131072 bit	2.5 V	e4			4.9 mm
M24C64-RMN5TG/B	STMicroelectronics	EEPROM	COMMERCIAL EXTENDED	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		8192 words	2.5	8	SMALL OUTLINE	1.27 mm	85 Cel	8KX8	8K	-20 Cel	NICKEL PALLADIUM GOLD	DUAL	R-PDSO-G8	1	5.5 V	1.75 mm	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	65536 bit	1.8 V	e4			4.9 mm
M24C32-RMB5T/C	STMicroelectronics	EEPROM	COMMERCIAL EXTENDED	8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		4096 words	2.5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	.5 mm	85 Cel	4KX8	4K	-20 Cel	TIN LEAD	DUAL	R-XDSO-N8		5.5 V	.6 mm	.4 MHz	2 mm	Not Qualified	5 ms	I2C	32768 bit	1.8 V	e0			3 mm
M24C128-BRDW5G/C	STMicroelectronics	EEPROM	COMMERCIAL EXTENDED	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	5 mA	16384 words	2.5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	.65 mm	85 Cel	16KX8	16K	-20 Cel	MATTE TIN	DUAL	R-PDSO-G8	1	5.5 V	1.2 mm	.4 MHz	3 mm	Not Qualified	5 ms	I2C	131072 bit	1.8 V	e3			4.4 mm
M24C64-RMN5TP/C	STMicroelectronics	EEPROM	COMMERCIAL EXTENDED	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		8192 words	2.5	8	SMALL OUTLINE	1.27 mm	85 Cel	8KX8	8K	-20 Cel	NICKEL PALLADIUM GOLD	DUAL	R-PDSO-G8	1	5.5 V	1.75 mm	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	65536 bit	1.8 V	e4			4.9 mm
M24C32-WDW5P/B	STMicroelectronics	EEPROM	COMMERCIAL EXTENDED	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		4096 words	2.7	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	.65 mm	85 Cel	4KX8	4K	-20 Cel	NICKEL PALLADIUM GOLD	DUAL	R-PDSO-G8	1	5.5 V	1.2 mm	.4 MHz	3 mm	Not Qualified	5 ms	I2C	32768 bit	2.5 V	e4			4.4 mm
M24C128-BWMN5TG/P	STMicroelectronics	EEPROM	COMMERCIAL EXTENDED	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	5 mA	16384 words	2.7	8	SMALL OUTLINE	1.27 mm	85 Cel	16KX8	16K	-20 Cel	NICKEL PALLADIUM GOLD	DUAL	R-PDSO-G8	1	5.5 V	1.75 mm	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	131072 bit	2.5 V	e4			4.9 mm
M24C128-BRMN5TP/P	STMicroelectronics	EEPROM	COMMERCIAL EXTENDED	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	5 mA	16384 words	2.5	8	SMALL OUTLINE	1.27 mm	85 Cel	16KX8	16K	-20 Cel	NICKEL PALLADIUM GOLD	DUAL	R-PDSO-G8	1	5.5 V	1.75 mm	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	131072 bit	1.8 V	e4			4.9 mm
M24C64-WDW5G/C	STMicroelectronics	EEPROM	COMMERCIAL EXTENDED	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		8192 words	2.7	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	.65 mm	85 Cel	8KX8	8K	-20 Cel	MATTE TIN	DUAL	R-PDSO-G8	1	5.5 V	1.2 mm	.4 MHz	3 mm	Not Qualified	5 ms	I2C	65536 bit	2.5 V	e3			4.4 mm
M24C64-WBN5G/B	STMicroelectronics	EEPROM	COMMERCIAL EXTENDED	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		8192 words	2.7	8	IN-LINE	2.54 mm	85 Cel	8KX8	8K	-20 Cel	Matte Tin (Sn)	DUAL	R-PDIP-T8		5.5 V	5.33 mm	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	65536 bit	2.5 V	e3			9.27 mm
M24C32-WBN5TP/C	STMicroelectronics	EEPROM	COMMERCIAL EXTENDED	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		4096 words	2.7	8	IN-LINE	2.54 mm	85 Cel	4KX8	4K	-20 Cel	MATTE TIN	DUAL	R-PDIP-T8		5.5 V	5.33 mm	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	32768 bit	2.5 V	e3			9.27 mm
M24C128-BWDW5P/B	STMicroelectronics	EEPROM	COMMERCIAL EXTENDED	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	5 mA	16384 words	2.7	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	.65 mm	85 Cel	16KX8	16K	-20 Cel	MATTE TIN	DUAL	R-PDSO-G8	1	5.5 V	1.2 mm	.4 MHz	3 mm	Not Qualified	5 ms	I2C	131072 bit	2.5 V	e3			4.4 mm
M24C16-RMB5TG	STMicroelectronics	EEPROM	COMMERCIAL EXTENDED	8	VSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		2048 words	2.5	8	SMALL OUTLINE, VERY THIN PROFILE	.5 mm	85 Cel	2KX8	2K	-20 Cel		DUAL	R-XDSO-N8		5.5 V	.6 mm	.4 MHz	2 mm	Not Qualified	5 ms	I2C	16384 bit	1.8 V		NOT SPECIFIED	NOT SPECIFIED	3 mm
M24C32-WMN5TG/B	STMicroelectronics	EEPROM	COMMERCIAL EXTENDED	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		4096 words	2.7	8	SMALL OUTLINE	1.27 mm	85 Cel	4KX8	4K	-20 Cel	NICKEL PALLADIUM GOLD	DUAL	R-PDSO-G8	1	5.5 V	1.75 mm	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	32768 bit	2.5 V	e4			4.9 mm
M24C128-BWDW5TP/B	STMicroelectronics	EEPROM	COMMERCIAL EXTENDED	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	5 mA	16384 words	2.7	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	.65 mm	85 Cel	16KX8	16K	-20 Cel	MATTE TIN	DUAL	R-PDSO-G8	1	5.5 V	1.2 mm	.4 MHz	3 mm	Not Qualified	5 ms	I2C	131072 bit	2.5 V	e3			4.4 mm
M24C32-WBN5/B	STMicroelectronics	EEPROM	COMMERCIAL EXTENDED	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		4096 words	2.7	8	IN-LINE	2.54 mm	85 Cel	4KX8	4K	-20 Cel	Tin/Lead (Sn60Pb40)	DUAL	R-PDIP-T8		5.5 V	5.33 mm	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	32768 bit	2.5 V	e0			9.27 mm
M24C32-RDW5TG/C	STMicroelectronics	EEPROM	COMMERCIAL EXTENDED	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		4096 words	2.5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	.65 mm	85 Cel	4KX8	4K	-20 Cel	MATTE TIN	DUAL	R-PDSO-G8	1	5.5 V	1.2 mm	.4 MHz	3 mm	Not Qualified	5 ms	I2C	32768 bit	1.8 V	e3			4.4 mm
M24C32-WMN5G/B	STMicroelectronics	EEPROM	COMMERCIAL EXTENDED	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		4096 words	2.7	8	SMALL OUTLINE	1.27 mm	85 Cel	4KX8	4K	-20 Cel	NICKEL PALLADIUM GOLD	DUAL	R-PDSO-G8	1	5.5 V	1.75 mm	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	32768 bit	2.5 V	e4			4.9 mm
M24C64-RMN5P/B	STMicroelectronics	EEPROM	COMMERCIAL EXTENDED	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		8192 words	2.5	8	SMALL OUTLINE	1.27 mm	85 Cel	8KX8	8K	-20 Cel	NICKEL PALLADIUM GOLD	DUAL	R-PDSO-G8	1	5.5 V	1.75 mm	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	65536 bit	1.8 V	e4			4.9 mm
M24C64-WMN5TP/B	STMicroelectronics	EEPROM	COMMERCIAL EXTENDED	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		8192 words	2.7	8	SMALL OUTLINE	1.27 mm	85 Cel	8KX8	8K	-20 Cel	NICKEL PALLADIUM GOLD	DUAL	R-PDSO-G8	1	5.5 V	1.75 mm	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	65536 bit	2.5 V	e4			4.9 mm
M24C64-WBN5T/B	STMicroelectronics	EEPROM	COMMERCIAL EXTENDED	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		8192 words	2.7	8	IN-LINE	2.54 mm	85 Cel	8KX8	8K	-20 Cel	TIN LEAD	DUAL	R-PDIP-T8		5.5 V	5.33 mm	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	65536 bit	2.5 V	e0			9.27 mm
M24C128-BRMN5TP/C	STMicroelectronics	EEPROM	COMMERCIAL EXTENDED	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	5 mA	16384 words	2.5	8	SMALL OUTLINE	1.27 mm	85 Cel	16KX8	16K	-20 Cel	NICKEL PALLADIUM GOLD	DUAL	R-PDSO-G8	1	5.5 V	1.75 mm	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	131072 bit	1.8 V	e4			4.9 mm
M24C01-RDS5TG	STMicroelectronics	EEPROM	COMMERCIAL EXTENDED	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		128 words	2.5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	.65 mm	85 Cel	128X8	128	-20 Cel		DUAL	S-PDSO-G8		5.5 V	1.1 mm	.4 MHz	3 mm	Not Qualified	5 ms	I2C	1024 bit	1.8 V				3 mm
M24C32-WBN5/C	STMicroelectronics	EEPROM	COMMERCIAL EXTENDED	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		4096 words	2.7	8	IN-LINE	2.54 mm	85 Cel	4KX8	4K	-20 Cel	TIN LEAD	DUAL	R-PDIP-T8		5.5 V	5.33 mm	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	32768 bit	2.5 V	e0			9.27 mm
M24C04-RDW5TG	STMicroelectronics	EEPROM	COMMERCIAL EXTENDED	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		512 words	2.5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	.65 mm	85 Cel	512X8	512	-20 Cel	MATTE TIN	DUAL	R-PDSO-G8	1	5.5 V	1.2 mm	.4 MHz	3 mm	Not Qualified	5 ms	I2C	4096 bit	1.8 V	e3			4.4 mm
M24C32-RDW5TP/B	STMicroelectronics	EEPROM	COMMERCIAL EXTENDED	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		4096 words	2.5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	.65 mm	85 Cel	4KX8	4K	-20 Cel	NICKEL PALLADIUM GOLD	DUAL	R-PDSO-G8	1	5.5 V	1.2 mm	.4 MHz	3 mm	Not Qualified	5 ms	I2C	32768 bit	1.8 V	e4			4.4 mm
M24C128-BRDW5TG/P	STMicroelectronics	EEPROM	COMMERCIAL EXTENDED	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	5 mA	16384 words	2.5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	.65 mm	85 Cel	16KX8	16K	-20 Cel	MATTE TIN	DUAL	R-PDSO-G8	1	5.5 V	1.2 mm	.4 MHz	3 mm	Not Qualified	5 ms	I2C	131072 bit	1.8 V	e3			4.4 mm
M24C04-WDW5TG	STMicroelectronics	EEPROM	COMMERCIAL EXTENDED	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		512 words	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	.65 mm	85 Cel	512X8	512	-20 Cel	MATTE TIN	DUAL	R-PDSO-G8	1	5.5 V	1.2 mm	.4 MHz	3 mm	Not Qualified	5 ms	I2C	4096 bit	2.5 V	e3			4.4 mm
M24C32-WMN5/B	STMicroelectronics	EEPROM	COMMERCIAL EXTENDED	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		4096 words	2.7	8	SMALL OUTLINE	1.27 mm	85 Cel	4KX8	4K	-20 Cel	TIN LEAD	DUAL	R-PDSO-G8		5.5 V	1.75 mm	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	32768 bit	2.5 V	e0			4.9 mm
M24C128-BRDW5TP/C	STMicroelectronics	EEPROM	COMMERCIAL EXTENDED	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	5 mA	16384 words	2.5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	.65 mm	85 Cel	16KX8	16K	-20 Cel	MATTE TIN	DUAL	R-PDSO-G8	1	5.5 V	1.2 mm	.4 MHz	3 mm	Not Qualified	5 ms	I2C	131072 bit	1.8 V	e3			4.4 mm
M24C32-WDW5P	STMicroelectronics	EEPROM	COMMERCIAL EXTENDED	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		4096 words	2.7	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	.65 mm	85 Cel	4KX8	4K	-20 Cel	TIN LEAD	DUAL	R-PDSO-G8		5.5 V	1.2 mm	.4 MHz	3 mm	Not Qualified	5 ms	I2C	32768 bit	2.5 V	e0			4.4 mm
M24C02-WBN5TP	STMicroelectronics	EEPROM	COMMERCIAL EXTENDED	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		256 words	5	8	IN-LINE	2.54 mm	85 Cel	256X8	256	-20 Cel	MATTE TIN	DUAL	R-PDIP-T8		5.5 V	5.33 mm	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	2048 bit	2.5 V	e3			9.27 mm
M24C64-RMN5T/C	STMicroelectronics	EEPROM	COMMERCIAL EXTENDED	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		8192 words	2.5	8	SMALL OUTLINE	1.27 mm	85 Cel	8KX8	8K	-20 Cel		DUAL	R-PDSO-G8		5.5 V	1.75 mm	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	65536 bit	1.8 V				4.9 mm
M24C128-BRMN5/B	STMicroelectronics	EEPROM	COMMERCIAL EXTENDED	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		16384 words	2.5	8	SMALL OUTLINE	1.27 mm	85 Cel	16KX8	16K	-20 Cel		DUAL	R-PDSO-G8		5.5 V	1.75 mm	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	131072 bit	1.8 V				4.9 mm
M24C32-WBN5T/C	STMicroelectronics	EEPROM	COMMERCIAL EXTENDED	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		4096 words	2.7	8	IN-LINE	2.54 mm	85 Cel	4KX8	4K	-20 Cel	TIN LEAD	DUAL	R-PDIP-T8		5.5 V	5.33 mm	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	32768 bit	2.5 V	e0			9.27 mm
M24C08-WDW5TG	STMicroelectronics	EEPROM	COMMERCIAL EXTENDED	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		1024 words	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	.65 mm	85 Cel	1KX8	1K	-20 Cel	MATTE TIN	DUAL	R-PDSO-G8	1	5.5 V	1.2 mm	.4 MHz	3 mm	Not Qualified	5 ms	I2C	8192 bit	2.5 V	e3			4.4 mm
M24C128-BWMN5TG/B	STMicroelectronics	EEPROM	COMMERCIAL EXTENDED	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	5 mA	16384 words	2.7	8	SMALL OUTLINE	1.27 mm	85 Cel	16KX8	16K	-20 Cel	NICKEL PALLADIUM GOLD	DUAL	R-PDSO-G8	1	5.5 V	1.75 mm	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	131072 bit	2.5 V	e4			4.9 mm
M24C01-WMN5TG	STMicroelectronics	EEPROM	COMMERCIAL EXTENDED	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		128 words	5	8	SMALL OUTLINE	1.27 mm	85 Cel	128X8	128	-20 Cel	NICKEL PALLADIUM GOLD	DUAL	R-PDSO-G8	1	5.5 V	1.75 mm	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	1024 bit	2.5 V	e4			4.9 mm
M24C04-RMB5TP	STMicroelectronics	EEPROM	COMMERCIAL EXTENDED	8	VSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		512 words	2.5	8	SMALL OUTLINE, VERY THIN PROFILE	.5 mm	85 Cel	512X8	512	-20 Cel		DUAL	R-XDSO-N8		5.5 V	.6 mm	.4 MHz	2 mm	Not Qualified	5 ms	I2C	4096 bit	1.8 V		NOT SPECIFIED	NOT SPECIFIED	3 mm
M24C32-RMN5TP	STMicroelectronics	EEPROM	COMMERCIAL EXTENDED	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		4096 words	2.5	8	SMALL OUTLINE	1.27 mm	85 Cel	4KX8	4K	-20 Cel	TIN LEAD	DUAL	R-PDSO-G8		5.5 V	1.75 mm	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	32768 bit	1.8 V	e0			4.9 mm
M24C32-WBN5TP/B	STMicroelectronics	EEPROM	COMMERCIAL EXTENDED	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		4096 words	2.7	8	IN-LINE	2.54 mm	85 Cel	4KX8	4K	-20 Cel	MATTE TIN	DUAL	R-PDIP-T8		5.5 V	5.33 mm	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	32768 bit	2.5 V	e3			9.27 mm
M24C128-BWMN5G/B	STMicroelectronics	EEPROM	COMMERCIAL EXTENDED	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	5 mA	16384 words	2.7	8	SMALL OUTLINE	1.27 mm	85 Cel	16KX8	16K	-20 Cel	NICKEL PALLADIUM GOLD	DUAL	R-PDSO-G8	1	5.5 V	1.75 mm	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	131072 bit	2.5 V	e4			4.9 mm

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.