INDUSTRIAL EEPROM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	I2C Control Byte	Ready or Busy	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
N24S64BC4DYT3G	Onsemi	EEPROM	INDUSTRIAL	4	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		8192 words		5			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.4 mm	85 Cel			8KX8	8K	-40 Cel		TIN SILVER COPPER			BOTTOM			S-PBGA-B4	1	5.5 V	.3 mm		1 MHz	.77 mm		5 ms	I2C	65536 bit	1.7 V	IT ALSO OPERATES AT 0.4MHZ		e1	30	260		.77 mm
24AA04-I/SN	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	512 words		2.5		2/5	8	SMALL OUTLINE	SOP8,.23		EEPROMs	200	1.27 mm	85 Cel		OPEN-DRAIN	512X8	512	-40 Cel		MATTE TIN	1010XXMR		DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	4096 bit	1.7 V	1.7V TO 2.5V @ 0.1MHz		e3	30	260	.000001 Amp	4.9 mm		2.5
24CW1280T-I/CS0668	Microchip Technology	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	BALL	SERIAL	SYNCHRONOUS	1 mA	16384 words		1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA4,2X2,16			200	.4 mm	85 Cel		OPEN-DRAIN	16KX8	16K	-40 Cel		TIN SILVER COPPER	1010DDDR		BOTTOM	1	SOFTWARE	R-PBGA-B4		5.5 V	.33 mm	1000000 Write/Erase Cycles	1 MHz			5 ms	I2C	131072 bit	1.6 V			e1			.000001 Amp			1.8
24FC64T-I/MF	Microchip Technology	EEPROM	INDUSTRIAL	8	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	8192 words		4.5		2/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,25		EEPROMs	200	.65 mm	85 Cel		OPEN-DRAIN	8KX8	8K	-40 Cel		MATTE TIN	1010DDDR		DUAL	1	HARDWARE	S-PDSO-N8		5.5 V	1 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified	5 ms	I2C	65536 bit	2.5 V	ALSO OPERATES AT 1.7V TO 2.5V @ 0.4MHZ		e3			.000001 Amp	3 mm		4.5
24LC04BH-I/SN	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	512 words		5		3/5	8	SMALL OUTLINE	SOP8,.23		EEPROMs	200	1.27 mm	85 Cel		OPEN-DRAIN	512X8	512	-40 Cel		Matte Tin (Sn)	1010XXMR		DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	4096 bit	2.5 V		16	e3	30	260	.000005 Amp	4.9 mm		5	YES
24LC08B-I/P	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	AEC-Q100	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	1024 words		5		3/5	8	IN-LINE	DIP8,.3		EEPROMs	200	2.54 mm	85 Cel		OPEN-DRAIN	1KX8	1K	-40 Cel		MATTE TIN	1010XMMR		DUAL	1	HARDWARE	R-PDIP-T8		5.5 V	5.334 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	8192 bit	2.5 V			e3			.000001 Amp	9.271 mm		5
24LC65T-I/SM	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words		5		3/5	8	SMALL OUTLINE	SOP8,.3		EEPROMs	200	1.27 mm	85 Cel		OPEN-DRAIN	8KX8	8K	-40 Cel		Matte Tin (Sn) - annealed	1010DDDR		DUAL	1		R-PDSO-G8	1	6 V	2.03 mm	1000000 Write/Erase Cycles	.1 MHz	5.25 mm	Not Qualified	5 ms	I2C	65536 bit	2.5 V			e3	40	260	.000005 Amp	5.245 mm		5
93AA66AT-I/OT	Microchip Technology	EEPROM	INDUSTRIAL	6	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	2 mA	512 words		2.5	YES	2/5	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP5/6,.11,37		EEPROMs	200	.95 mm	85 Cel	NO	TOTEM POLE	512X8	512	-40 Cel		Matte Tin (Sn)		YES	DUAL	1	SOFTWARE	R-PDSO-G6	1	5.5 V	1.45 mm	1000000 Write/Erase Cycles	3 MHz	1.63 mm	Not Qualified	6 ms	MICROWIRE	4096 bit	1.8 V			e3	40	260	.000001 Amp	2.95 mm
93LC66B-I/SNRVA	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	2 mA	256 words		2.5			16	SMALL OUTLINE				200	1.27 mm	85 Cel			256X16	256	-40 Cel					DUAL			R-PDSO-G8		5.5 V	1.75 mm		1 MHz	3.9 mm		6 ms	MICROWIRE	4096 bit	1.8 V	1000000 ERASE/WRITE CYCLES MIN; DATA RETENTION > 200 YEARS						4.9 mm
AT17LV010A-10PI	Atmel	CONFIGURATION MEMORY	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	10 mA	1048576 words		3.3		3.3/5	1	IN-LINE	DIP8,.3		EEPROMs		2.54 mm	85 Cel			1MX1	1M	-40 Cel		TIN LEAD			DUAL		HARDWARE	R-PDIP-T8	1	3.6 V	5.334 mm		10 MHz	7.62 mm	Not Qualified			1048576 bit	3 V	ALSO OPERATES AT 5V SUPPLY		e0				9.271 mm
AT24C02B-TH-T	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words		5			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25			100	.65 mm	85 Cel			256X8	256	-40 Cel			1010DDDR		DUAL		HARDWARE	R-PDSO-G8		5.5 V	1.2 mm	1000000 Write/Erase Cycles	1 MHz	3 mm		5 ms	I2C	2048 bit	4.5 V						.000018 Amp	4.4 mm		5
AT24C16D-MAHM-E	Microchip Technology	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	1 mA	2048 words					8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20			100	.5 mm	85 Cel		OPEN-DRAIN	2KX8	2K	-40 Cel		NICKEL PALLADIUM GOLD	1010MMMR		DUAL	1	HARDWARE	R-PDSO-N8	1	3.6 V	.6 mm	1000000 Write/Erase Cycles	1 MHz	2 mm		5 ms	I2C	16384 bit	2.5 V	ALSO OPERATES 1.7V AT 100 KHZ STD MODE AND 400 KHZ @ FAST MODE		e4	40	260	.0000008 Amp	3 mm
CAT24C04TDI-GT3	Onsemi	EEPROM	INDUSTRIAL	5	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	4096 words		3.3		2/5	1	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSOP5/6,.11,37		EEPROMs	100	.95 mm	85 Cel			4KX1	4K	-40 Cel		NICKEL PALLADIUM GOLD	1010000R		DUAL		HARDWARE	R-PDSO-G5	1	5.5 V	1 mm	1000000 Write/Erase Cycles	.4 MHz	1.6 mm	Not Qualified	5 ms	I2C	4096 bit	1.7 V			e4	30	260	.000001 Amp	2.9 mm
M24512-DRDW8TP/K	STMicroelectronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	2 mA	65536 words		2.5		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	50	.65 mm	105 Cel			64KX8	64K	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR		DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	900000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified	4 ms	I2C	524288 bit	1.8 V			e4		260	.000001 Amp	4.4 mm
24AA512-I/ST14	Microchip Technology	EEPROM	INDUSTRIAL	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	65536 words		2.5		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP14,.25		EEPROMs	200	.65 mm	85 Cel			64KX8	64K	-40 Cel		Matte Tin (Sn)	1010DDDR		DUAL		HARDWARE	R-PDSO-G14	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	4.4 mm	Not Qualified	5 ms	I2C	524288 bit	1.7 V			e3	40	260	.000001 Amp	5 mm
24LC01B-I/SNG	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words		5		3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	200	1.27 mm	85 Cel	NO		128X8	128	-40 Cel		Matte Tin (Sn)	1010XXXR		DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	1024 bit	2.5 V			e3	40	260	.000005 Amp	4.9 mm
AT24C01D-XHM-B	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	1 mA	128 words		3		1.8/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	100	.65 mm	85 Cel		OPEN-DRAIN	128X8	128	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR		DUAL	1	HARDWARE	R-PDSO-G8	1	3.6 V	1.2 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified	5 ms	I2C	1024 bit	2.5 V	ALSO OPERATES AT 1.7V TO 3.6V @0.4MHZ		e4			.0000008 Amp	4.4 mm		3
AT24CM01-UUM-T	Microchip Technology	EEPROM	INDUSTRIAL	8	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	3 mA	131072 words		3		1.8/5	8	GRID ARRAY, FINE PITCH	BGA8,3X5,17/10		EEPROMs	40	.5 mm	85 Cel			128KX8	128K	-40 Cel			1010DDMR		BOTTOM		HARDWARE	R-PBGA-B8		5.5 V	.538 mm	1000000 Write/Erase Cycles	.4 MHz		Not Qualified	5 ms	I2C	1048576 bit	1.7 V						.000001 Amp
AT25512Y7-YH-T	Microchip Technology	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	10 mA	65536 words		2.7		2/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		EEPROMs	40	1.27 mm	85 Cel			64KX8	64K	-40 Cel		Nickel/Palladium/Gold (Ni/Pd/Au)			DUAL		HARDWARE/SOFTWARE	R-XDSO-N8		3.6 V	.6 mm	1000000 Write/Erase Cycles	5 MHz	4.9 mm	Not Qualified	5 ms	SPI	524288 bit	1.8 V			e4			.000003 Amp	6 mm
AT28BV256-20JU	Microchip Technology	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	15 mA	32768 words		3	YES	3/3.3	8	CHIP CARRIER	LCC32,.45X.55		EEPROMs	10	1.27 mm	85 Cel			32KX8	32K	-40 Cel	NO	MATTE TIN			QUAD	1	HARDWARE/SOFTWARE	R-PQCC-J32	2	3.6 V	3.556 mm	10000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms		262144 bit	2.7 V		64	e3	40	245	.00005 Amp	13.97 mm	200 ns	3	YES
AT28BV256-20SI	Atmel	EEPROM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	15 mA	32768 words		3	YES	3/3.3	8	SMALL OUTLINE	SOP28,.4		EEPROMs	10	1.27 mm	85 Cel			32KX8	32K	-40 Cel	NO	TIN LEAD			DUAL		HARDWARE/SOFTWARE	R-PDSO-G28	2	3.6 V	2.65 mm	10000 Write/Erase Cycles		7.5 mm	Not Qualified	10 ms		262144 bit	2.7 V	AUTOMATIC WRITE	64	e0		240	.00005 Amp	17.9 mm	200 ns	3	YES
BR24G256FJ-3AGTE2	ROHM	EEPROM	INDUSTRIAL	8	LSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		32768 words					8	SMALL OUTLINE, LOW PROFILE					1.27 mm	85 Cel			32KX8	32K	-40 Cel					DUAL			R-PDSO-G8		5.5 V	1.65 mm		1 MHz	3.9 mm		5 ms	I2C	262144 bit	1.7 V	SEATED HT-CALCULATED			NOT SPECIFIED	NOT SPECIFIED		4.9 mm
DS28E15P+	Analog Devices	EEPROM	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		C BEND	SERIAL	ASYNCHRONOUS		512 words		3.3			1	SMALL OUTLINE					1.27 mm	85 Cel			512X1	512	-40 Cel		Matte Tin (Sn) - annealed			DUAL			R-PDSO-C6	1	3.63 V	1.5 mm			3.94 mm			1-WIRE	512 bit	2.97 V			e3	30	260		4.29 mm
DS28E15Q+T	Analog Devices	EEPROM	INDUSTRIAL	6	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS		512 words		3.3			1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.95 mm	85 Cel			512X1	512	-40 Cel		Matte Tin (Sn) - annealed			DUAL			S-PDSO-N6	1	3.63 V	.8 mm			3 mm			1-WIRE	512 bit	2.97 V			e3	30	260		3 mm
M24C64-FDW6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words		1.8		1.8/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	40	.65 mm	85 Cel			8KX8	8K	-40 Cel		NICKEL PALLADIUM GOLD SILVER	1010DDDR		DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	10 ms	I2C	65536 bit	1.7 V			e4	30	260	.000001 Amp	4.4 mm
X28HC256JI-90	Renesas Electronics	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		32768 words		5			8	CHIP CARRIER					1.27 mm	85 Cel			32KX8	32K	-40 Cel					QUAD			R-PQCC-J32		5.5 V	3.55 mm			11.43 mm		5 ms		262144 bit	4.5 V							13.97 mm	90 ns	5
XC1704LPC44I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS	10 mA	4194304 words	COMMON	3.3		3.3	1	CHIP CARRIER	LDCC44,.7SQ		OTP ROMs		1.27 mm	85 Cel		3-STATE	4MX1	4M	-40 Cel		Tin/Lead (Sn85Pb15)			QUAD			S-PQCC-J44	3	3.6 V	4.572 mm		15 MHz	16.5862 mm	Not Qualified			4194304 bit	3 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS		e0	30	225	.00005 Amp	16.5862 mm
11AA020-I/MS	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	5 mA	256 words		5	NO	2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19		EEPROMs	200	.65 mm	85 Cel	NO	TOTEM POLE	256X8	256	-40 Cel		MATTE TIN		NO	DUAL	1	SOFTWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified	10 ms	1-WIRE	2048 bit	1.8 V			e3	40	260	.000005 Amp	3 mm
11AA020-I/P	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	TS 16949	THROUGH-HOLE	SERIAL	SYNCHRONOUS	5 mA	256 words		5	NO	2/5	8	IN-LINE	DIP8,.3		EEPROMs	200	2.54 mm	85 Cel	NO	TOTEM POLE	256X8	256	-40 Cel		MATTE TIN		NO	DUAL	1	SOFTWARE	R-PDIP-T8		5.5 V	5.334 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified	10 ms	1-WIRE	2048 bit	1.8 V			e3			.000005 Amp	9.271 mm
11AA020-I/SN	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	5 mA	256 words		5	NO	2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	200	1.27 mm	85 Cel	NO	TOTEM POLE	256X8	256	-40 Cel		MATTE TIN		NO	DUAL	1	SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	10 ms	1-WIRE	2048 bit	1.8 V			e3	30	260	.000005 Amp	4.9 mm
11AA020-I/TO	Microchip Technology	EEPROM	INDUSTRIAL	3	TO-92	UNSPECIFIED	PLASTIC/EPOXY	NO	1	CMOS	TS 16949	THROUGH-HOLE	SERIAL	SYNCHRONOUS	5 mA	256 words		5	NO	2/5	8	CYLINDRICAL	SIP3,.1,50		EEPROMs	200	1.27 mm	85 Cel	NO	TOTEM POLE	256X8	256	-40 Cel		MATTE TIN		NO	BOTTOM	1	SOFTWARE	X-PBCY-T3		5.5 V		1000000 Write/Erase Cycles	1 MHz		Not Qualified	10 ms	1-WIRE	2048 bit	1.8 V			e3			.000005 Amp
11AA020T-I/MNY	Microchip Technology	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	NO LEAD	SERIAL	SYNCHRONOUS	5 mA	256 words		5	NO	2/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20		EEPROMs	200	.5 mm	85 Cel	NO	TOTEM POLE	256X8	256	-40 Cel		NICKEL PALLADIUM GOLD		NO	DUAL	1	SOFTWARE	R-PDSO-N8	1	5.5 V	.8 mm	1000000 Write/Erase Cycles	1 MHz	2 mm	Not Qualified	10 ms	1-WIRE	2048 bit	1.8 V			e4	40	260	.000005 Amp	3 mm
11AA020T-I/MS	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	5 mA	256 words		5	NO	2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19		EEPROMs	200	.65 mm	85 Cel	NO	TOTEM POLE	256X8	256	-40 Cel		MATTE TIN		NO	DUAL	1	SOFTWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified	10 ms	1-WIRE	2048 bit	1.8 V			e3	40	260	.000005 Amp	3 mm
11AA020T-I/SN	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	5 mA	256 words		5	NO	2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	200	1.27 mm	85 Cel	NO	TOTEM POLE	256X8	256	-40 Cel		MATTE TIN		NO	DUAL	1	SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	10 ms	1-WIRE	2048 bit	1.8 V			e3	30	260	.000005 Amp	4.9 mm
11AA020T-I/TT	Microchip Technology	EEPROM	INDUSTRIAL	3	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	5 mA	256 words		5	NO	2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TO-236		EEPROMs	200	.95 mm	85 Cel	NO	TOTEM POLE	256X8	256	-40 Cel		MATTE TIN		NO	DUAL	1	SOFTWARE	R-PDSO-G3	1	5.5 V	1.12 mm	1000000 Write/Erase Cycles	1 MHz	1.3 mm	Not Qualified	10 ms	1-WIRE	2048 bit	1.8 V			e3	40	260	.000005 Amp	2.9 mm
24AA512-I/ST14G	Microchip Technology	EEPROM	INDUSTRIAL	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	65536 words		2.5		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP14,.25		EEPROMs	200	.65 mm	85 Cel			64KX8	64K	-40 Cel		Matte Tin (Sn)	1010DDDR		DUAL		HARDWARE	R-PDSO-G14	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	4.4 mm	Not Qualified	5 ms	I2C	524288 bit	1.7 V			e3	40	260	.000001 Amp	5 mm
24FC64F-I/MS	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words		5		2/5	8	SMALL OUTLINE	SOP8,.19		EEPROMs	200	.65 mm	85 Cel		OPEN-DRAIN	8KX8	8K	-40 Cel		MATTE TIN	1010DDDR		DUAL	1	HARDWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified	5 ms	I2C	65536 bit	1.7 V			e3	40	260	.000001 Amp	3 mm		5
93LC56C-I/SNG	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	128 words		5		3/5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	200	1.27 mm	85 Cel			128X16	128	-40 Cel		Matte Tin (Sn)			DUAL		SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	2 MHz	3.9 mm	Not Qualified	6 ms	MICROWIRE	2048 bit	2.5 V			e3	40	260	.000001 Amp	4.9 mm
AT21CS01-SSHM15-T	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	.5 mA	128 words		1.8			8	SMALL OUTLINE	SOP8,.23			100	1.27 mm	85 Cel		OPEN-DRAIN	128X8	128	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR		DUAL	1		R-PDSO-G8	3	3.6 V	1.75 mm	1000000 Write/Erase Cycles		3.9 mm		5 ms	I2C	1024 bit	1.7 V			e4	40	260	.0000025 Amp	4.9 mm		1.8
AT24C02B-TH-B	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words		5			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25			100	.65 mm	85 Cel			256X8	256	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR		DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	1 MHz	3 mm		5 ms	I2C	2048 bit	4.5 V			e4		260	.000018 Amp	4.4 mm		5
AT24CM01-SHM-B	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	131072 words		5		1.8/5	8	SMALL OUTLINE	SOP8,.3		EEPROMs	40	1.27 mm	85 Cel			128KX8	128K	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR		DUAL	1	HARDWARE	R-PDSO-G8	3	5.5 V	2.16 mm	1000000 Write/Erase Cycles	1 MHz	5.24 mm	Not Qualified	5 ms	I2C	1048576 bit	2.5 V	1.7V TO 5.5V @ 0.4MHz		e4			.000001 Amp	5.29 mm		5
AT28BV256-20JU-T	Microchip Technology	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	15 mA	32768 words		3	YES		8	CHIP CARRIER	LCC32,.45X.55				1.27 mm	85 Cel			32KX8	32K	-40 Cel					QUAD	1	HARDWARE/SOFTWARE	R-PQCC-J32		3.6 V	3.556 mm	10000 Write/Erase Cycles		11.43 mm		10 ms		262144 bit	2.7 V	THE PART EXISTS IN EEPROM3V	64				.00005 Amp	13.97 mm	200 ns	3
AT28C64B-15TU	Microchip Technology	EEPROM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	8192 words		5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22		EEPROMs	10	.55 mm	85 Cel			8KX8	8K	-40 Cel	NO	MATTE TIN			DUAL			R-PDSO-G28		5.5 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified	10 ms		65536 bit	4.5 V	100K ENDURANCE CYCLES; 10 YEARS DATA RETENTION; AUTOMATIC PAGE WRITE	64	e3			.0001 Amp	11.8 mm	150 ns	5	YES
M24C02-RMB6TG	STMicroelectronics	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	.8 mA	256 words		2.5		2/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20		EEPROMs	40	.5 mm	85 Cel			256X8	256	-40 Cel		Nickel/Palladium/Gold (Ni/Pd/Au)	1010DDDR		DUAL		HARDWARE	R-PDSO-N8	1	5.5 V	.6 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	2048 bit	1.8 V			e4	30	260	.000001 Amp	3 mm
11LC010-I/P	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	TS 16949	THROUGH-HOLE	SERIAL	SYNCHRONOUS	5 mA	128 words		5	NO	3/5	8	IN-LINE	DIP8,.3		EEPROMs	200	2.54 mm	85 Cel	NO	TOTEM POLE	128X8	128	-40 Cel		MATTE TIN		NO	DUAL	1	SOFTWARE	R-PDIP-T8		5.5 V	5.334 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified	10 ms	1-WIRE	1024 bit	2.5 V			e3			.000005 Amp	9.271 mm
24AA512-I/SN	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	65536 words		2.5		2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	200	1.27 mm	85 Cel			64KX8	64K	-40 Cel		Matte Tin (Sn)	1010DDDR		DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	524288 bit	1.7 V			e3	30	260	.000001 Amp	4.9 mm
24CW1280-I/SN	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	1 mA	16384 words		1.8			8	SMALL OUTLINE	SOP8,.23			200	1.27 mm	85 Cel		OPEN-DRAIN	16KX8	16K	-40 Cel		Matte Tin (Sn)	1010DDDR		DUAL	1	SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm		5 ms	I2C	131072 bit	1.6 V			e3			.000001 Amp	4.9 mm		1.8
24FC01T-I/MS	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words		2.5			8	SMALL OUTLINE	SOP8,.19			200	.65 mm	85 Cel			128X8	128	-40 Cel			1010XXXR		DUAL	1	HARDWARE	S-PDSO-G8		5.5 V	1.1 mm	1000000 Write/Erase Cycles	1 MHz	3 mm		5 ms	I2C	1024 bit	1.7 V						.000001 Amp	3 mm		2.5

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.