Altera EEPROM 67

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time
EPC1064TC32	Altera	CONFIGURATION MEMORY	COMMERCIAL	32	LQFP	SQUARE	PLASTIC/EPOXY	YES	1	MOS	GULL WING	SERIAL	SYNCHRONOUS		65536 words	COMMON	5	5	1	FLATPACK, LOW PROFILE	TQFP32,.35SQ,32	OTP ROMs	.8 mm	70 Cel	3-STATE	64KX1	64K	0 Cel	TIN LEAD	QUAD	S-PQFP-G32	3	5.25 V	1.27 mm	4 MHz	7 mm	Not Qualified		65536 bit	4.75 V	4 WIRE INTERFACE TO FLEX 8000 DEVICES	e0		220			7 mm
EPC1064LC	Altera	CONFIGURATION MEMORY	COMMERCIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	SERIAL	SYNCHRONOUS		65536 words		5		1	CHIP CARRIER			1.27 mm	70 Cel	3-STATE	64KX1	64K	0 Cel	TIN LEAD	QUAD	S-PQCC-J20		5.25 V	4.57 mm		8.9662 mm	Not Qualified		65536 bit	4.75 V	4 WIRE INTERFACE TO FLEX 8000 DEVICES	e0					8.9662 mm
EPC1064TI32	Altera	CONFIGURATION MEMORY	INDUSTRIAL	32	LQFP	SQUARE	PLASTIC/EPOXY	YES	1	MOS	GULL WING		SYNCHRONOUS		65536 words	COMMON	5	5	1	FLATPACK, LOW PROFILE	TQFP32,.35SQ,32	OTP ROMs	.8 mm	85 Cel	3-STATE	64KX1	64K	-40 Cel	TIN LEAD	QUAD	S-PQFP-G32	3	5.5 V	1.27 mm	6 MHz	7 mm	Not Qualified		65536 bit	4.5 V	4 WIRE INTERFACE TO FLEX 8000 DEVICES	e0		220			7 mm
EPC1213LC	Altera	CONFIGURATION MEMORY	COMMERCIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	SERIAL	SYNCHRONOUS		26624 words	COMMON	5	5	8	CHIP CARRIER	LDCC20,.4SQ	OTP ROMs	1.27 mm	70 Cel	3-STATE	26KX8	26K	0 Cel	TIN LEAD	QUAD	S-PQCC-J20		5.25 V	4.57 mm	8 MHz	8.9662 mm	Not Qualified		212992 bit	4.75 V	4 WIRE INTERFACE TO FLEX 8000 DEVICES	e0		220			8.9662 mm
EPC1213D59628	Altera	CONFIGURATION MEMORY	MILITARY	8	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		212992 words		5		1	IN-LINE			2.54 mm	125 Cel	3-STATE	208KX1	208K	-55 Cel		DUAL	R-GDIP-T8		5.5 V	5.08 mm		7.62 mm	Not Qualified		212992 bit	4.5 V	4 WIRE INTERFACE TO FLEX 8000 DEVICES						9.65 mm
EPC1064VTI	Altera	CONFIGURATION MEMORY	INDUSTRIAL	32	LQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		65536 words		3.3		1	FLATPACK, LOW PROFILE			.8 mm	85 Cel	3-STATE	64KX1	64K	-40 Cel	TIN LEAD	QUAD	S-PQFP-G32		3.6 V	1.27 mm		7 mm	Not Qualified		65536 bit	3 V	4 WIRE INTERFACE TO FLEX 8000 DEVICES	e0					7 mm
EPC1064VLC20	Altera	CONFIGURATION MEMORY	COMMERCIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	MOS	J BEND	SERIAL	SYNCHRONOUS		65536 words	COMMON	3.3	3.3	1	CHIP CARRIER	LDCC20,.4SQ	OTP ROMs	1.27 mm	70 Cel	3-STATE	64KX1	64K	0 Cel	TIN LEAD	QUAD	S-PQCC-J20	1	3.6 V	4.572 mm	6 MHz	8.9662 mm	Not Qualified		65536 bit	3 V	4 WIRE INTERFACE TO FLEX 8000 DEVICES	e0		220			8.9662 mm
EPCQ-L256	Altera	CONFIGURATION MEMORY
EPC1064TM	Altera	CONFIGURATION MEMORY	MILITARY	32	LQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		65536 words		5		1	FLATPACK, LOW PROFILE			.8 mm	125 Cel	3-STATE	64KX1	64K	-55 Cel	MATTE TIN	QUAD	S-PQFP-G32		5.25 V	1.27 mm		7 mm	Not Qualified		65536 bit	4.75 V	4 WIRE INTERFACE TO FLEX 8000 DEVICES	e3					7 mm
EPCQ-L512	Altera	CONFIGURATION MEMORY
EPC1064VTM	Altera	CONFIGURATION MEMORY	MILITARY	32	LQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		65536 words		3.3		1	FLATPACK, LOW PROFILE			.8 mm	125 Cel	3-STATE	64KX1	64K	-55 Cel	MATTE TIN	QUAD	S-PQFP-G32		3.6 V	1.27 mm		7 mm	Not Qualified		65536 bit	3 V	4 WIRE INTERFACE TO FLEX 8000 DEVICES	e3					7 mm
EPC1441LCI20	Altera	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1		J BEND		SYNCHRONOUS		440800 words		3.3		1	CHIP CARRIER				85 Cel		440800X1	440800	-40 Cel		QUAD	S-PQCC-J20		3.6 V				Not Qualified		440800 bit	3 V	CAN ALSO BE OPERATED AT 4.5 TO 5.5V RANGE
EPC8QC100	Altera	CONFIGURATION MEMORY	COMMERCIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	90 mA	524288 words		3.3	3.3	16	FLATPACK	QFP100,.7X.9	Flash Memories	.65 mm	70 Cel		512KX16	512K	0 Cel	TIN LEAD	QUAD	R-PQFP-G100	3	3.6 V	2.15 mm	66.7 MHz	14 mm	Not Qualified		8388608 bit	3 V		e0	20	220	NOR TYPE	.00015 Amp	20 mm
EPC1VPC8	Altera	CONFIGURATION MEMORY	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	MOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		130812 words	COMMON	3.3	3.3	8	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	70 Cel	3-STATE	130812X8	130812	0 Cel	TIN LEAD	DUAL	R-PDIP-T8		3.6 V	4.318 mm		7.62 mm	Not Qualified		1046496 bit	3 V		e0		220			9.398 mm
EPC1213LI20	Altera	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	MOS	J BEND	SERIAL	SYNCHRONOUS		212942 words	COMMON	5	5	1	CHIP CARRIER	LDCC20,.4SQ	OTP ROMs	1.27 mm	85 Cel	3-STATE	212942X1	212942	-40 Cel	TIN LEAD	QUAD	S-PQCC-J20	1	5.5 V	4.572 mm	6 MHz	8.9662 mm	Not Qualified		212942 bit	4.5 V	4 WIRE INTERFACE TO FLEX 8000 DEVICES	e0	20	220			8.9662 mm
EPCQL512F24IN	Altera	CONFIGURATION MEMORY	INDUSTRIAL	24	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		536870912 words		1.8		1	GRID ARRAY				85 Cel		512MX1	512M	-40 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B24		2 V					8 ms	536870912 bit	1.7 V		e1
EPC1213DC8	Altera	CONFIGURATION MEMORY	COMMERCIAL	8	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		212992 words		5		1	IN-LINE			2.54 mm	70 Cel	3-STATE	208KX1	208K	0 Cel	TIN LEAD	DUAL	R-GDIP-T8		5.25 V	5.08 mm		7.62 mm	Not Qualified		212992 bit	4.75 V	4 WIRE INTERFACE TO FLEX 8000 DEVICES	e0					9.65 mm
EPC1213PI8	Altera	CONFIGURATION MEMORY	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	MOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		212942 words	COMMON	5	5	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	85 Cel	3-STATE	212942X1	212942	-40 Cel	TIN LEAD	DUAL	R-PDIP-T8	1	5.5 V	4.318 mm	6 MHz	7.62 mm	Not Qualified		212942 bit	4.5 V	4 WIRE INTERFACE TO FLEX 8000 DEVICES	e0					9.398 mm
EPC1213PI	Altera	CONFIGURATION MEMORY	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		212992 words		5		1	IN-LINE			2.54 mm	85 Cel	3-STATE	208KX1	208K	-40 Cel	TIN LEAD	DUAL	R-PDIP-T8		5.25 V	4.318 mm		7.62 mm	Not Qualified		212992 bit	4.75 V	4 WIRE INTERFACE TO FLEX 8000 DEVICES	e0					9.398 mm
EPC1213PM8	Altera	CONFIGURATION MEMORY	MILITARY	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		212992 words		5		1	IN-LINE			2.54 mm	125 Cel	3-STATE	208KX1	208K	-55 Cel		DUAL	R-PDIP-T8		5.5 V	4.318 mm		7.62 mm	Not Qualified		212992 bit	4.5 V	4 WIRE INTERFACE TO FLEX 8000 DEVICES						9.398 mm
EPC1213DI8	Altera	CONFIGURATION MEMORY	INDUSTRIAL	8	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		212992 words		5		1	IN-LINE			2.54 mm	85 Cel	3-STATE	208KX1	208K	-40 Cel	TIN LEAD	DUAL	R-GDIP-T8		5.5 V	5.08 mm		7.62 mm	Not Qualified		212992 bit	4.5 V	4 WIRE INTERFACE TO FLEX 8000 DEVICES	e0					9.65 mm
EPC16UC88N	Altera	CONFIGURATION MEMORY	COMMERCIAL	88	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	90 mA	1048576 words		3.3	3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA88,8X12,32	Flash Memories	.8 mm	70 Cel		1MX16	1M	0 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B88	3	3.6 V	1.4 mm	66.7 MHz	8 mm	Not Qualified		16777216 bit	3 V		e1	30	260	NOR TYPE	.00015 Amp	11 mm
EPC1604PC8	Altera	CONFIGURATION MEMORY	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	SYNCHRONOUS		1048576 words		3.3		1	IN-LINE				70 Cel		1MX1	1M	0 Cel	TIN LEAD	DUAL	R-PDIP-T8		3.6 V				Not Qualified		1048576 bit	3 V	USER SELECTABLE VCC=5V	e0						75 ns
EPC1213LC20	Altera	CONFIGURATION MEMORY	COMMERCIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	MOS	J BEND	SERIAL	SYNCHRONOUS		212942 words	COMMON	5	5	1	CHIP CARRIER	LDCC20,.4SQ	OTP ROMs	1.27 mm	70 Cel	3-STATE	212942X1	212942	0 Cel	TIN LEAD	QUAD	S-PQCC-J20	1	5.25 V	4.572 mm	6 MHz	8.9662 mm	Not Qualified		212942 bit	4.75 V	4 WIRE INTERFACE TO FLEX 8000 DEVICES	e0	20	220			8.9662 mm
EPC1064PC8	Altera	CONFIGURATION MEMORY	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	MOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		65536 words	COMMON	5	5	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	70 Cel	3-STATE	64KX1	64K	0 Cel	TIN LEAD	DUAL	R-PDIP-T8	1	5.25 V	4.318 mm	4 MHz	7.62 mm	Not Qualified		65536 bit	4.75 V	4 WIRE INTERFACE TO FLEX 8000 DEVICES	e0					9.398 mm
EPC1VPI8	Altera	CONFIGURATION MEMORY	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	MOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		130812 words	COMMON	3.3	3.3	8	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	85 Cel	3-STATE	130812X8	130812	-40 Cel	TIN LEAD	DUAL	R-PDIP-T8		3.6 V	4.318 mm		7.62 mm	Not Qualified		1046496 bit	3 V		e0		220			9.398 mm
EPC1213LM	Altera	CONFIGURATION MEMORY	MILITARY	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	SERIAL	SYNCHRONOUS		212992 words		5		1	CHIP CARRIER			1.27 mm	125 Cel	3-STATE	208KX1	208K	-55 Cel		QUAD	S-PQCC-J20		5.25 V	4.57 mm		8.9662 mm	Not Qualified		212992 bit	4.75 V	4 WIRE INTERFACE TO FLEX 8000 DEVICES						8.9662 mm
EPC1064PM	Altera	CONFIGURATION MEMORY	MILITARY	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		65536 words		5		1	IN-LINE			2.54 mm	125 Cel	3-STATE	64KX1	64K	-55 Cel		DUAL	R-PDIP-T8		5.25 V	4.318 mm		7.62 mm	Not Qualified		65536 bit	4.75 V	4 WIRE INTERFACE TO FLEX 8000 DEVICES						9.398 mm
EPC1064VLI20	Altera	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	MOS	J BEND		SYNCHRONOUS		65536 words	COMMON	3.3	3.3	1	CHIP CARRIER	LDCC20,.4SQ	OTP ROMs	1.27 mm	85 Cel	3-STATE	64KX1	64K	-40 Cel	TIN LEAD	QUAD	S-PQCC-J20		3.6 V	4.572 mm	6 MHz	8.9662 mm	Not Qualified		65536 bit	3 V	4 WIRE INTERFACE TO FLEX 8000 DEVICES	e0		220			8.9662 mm
EPC1064VLC	Altera	CONFIGURATION MEMORY	COMMERCIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	SERIAL	SYNCHRONOUS		65536 words		3.3		1	CHIP CARRIER			1.27 mm	70 Cel	3-STATE	64KX1	64K	0 Cel	TIN LEAD	QUAD	S-PQCC-J20		3.6 V	4.57 mm		8.9662 mm	Not Qualified		65536 bit	3 V	4 WIRE INTERFACE TO FLEX 8000 DEVICES	e0					8.9662 mm
EPC16QI100	Altera	CONFIGURATION MEMORY	INDUSTRIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	90 mA	1048576 words		3.3	3.3	16	FLATPACK	QFP100,.7X.9	Flash Memories	.65 mm	85 Cel		1MX16	1M	-40 Cel	TIN LEAD	QUAD	R-PQFP-G100	3	3.6 V	2.15 mm	66.7 MHz	14 mm	Not Qualified		16777216 bit	3 V		e0	20	220	NOR TYPE	.00015 Amp	20 mm
EPCQ-L1024	Altera	CONFIGURATION MEMORY
EPC1064VPI	Altera	CONFIGURATION MEMORY	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		65536 words		3.3		1	IN-LINE			2.54 mm	85 Cel	3-STATE	64KX1	64K	-40 Cel	TIN LEAD	DUAL	R-PDIP-T8		3.6 V	4.318 mm		7.62 mm	Not Qualified		65536 bit	3 V	4 WIRE INTERFACE TO FLEX 8000 DEVICES	e0					9.398 mm
EPC1064LM	Altera	CONFIGURATION MEMORY	MILITARY	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	SERIAL	SYNCHRONOUS		65536 words		5		1	CHIP CARRIER			1.27 mm	125 Cel	3-STATE	64KX1	64K	-55 Cel		QUAD	S-PQCC-J20		5.25 V	4.57 mm		8.9662 mm	Not Qualified		65536 bit	4.75 V	4 WIRE INTERFACE TO FLEX 8000 DEVICES						8.9662 mm
EPC1064PC	Altera	CONFIGURATION MEMORY	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		65536 words		5		1	IN-LINE			2.54 mm	70 Cel	3-STATE	64KX1	64K	0 Cel	TIN LEAD	DUAL	R-PDIP-T8		5.25 V	4.318 mm		7.62 mm	Not Qualified		65536 bit	4.75 V	4 WIRE INTERFACE TO FLEX 8000 DEVICES	e0					9.398 mm
EPC1064VPI8	Altera	CONFIGURATION MEMORY	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	MOS	THROUGH-HOLE		SYNCHRONOUS		65536 words	COMMON	3.3	3.3	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	85 Cel	3-STATE	64KX1	64K	-40 Cel	TIN LEAD	DUAL	R-PDIP-T8		3.6 V	4.318 mm	4 MHz	7.62 mm	Not Qualified		65536 bit	3 V	4 WIRE INTERFACE TO FLEX 8000 DEVICES	e0		220			9.398 mm
EPC1VLI20	Altera	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	MOS	J BEND	SERIAL	SYNCHRONOUS		130812 words	COMMON	3.3	3.3	8	CHIP CARRIER	LDCC20,.4SQ	OTP ROMs	1.27 mm	85 Cel	3-STATE	130812X8	130812	-40 Cel	TIN LEAD	QUAD	S-PQCC-J20		3.6 V	4.57 mm		8.9662 mm	Not Qualified		1046496 bit	3 V		e0		220			8.9662 mm
EPC1064PI	Altera	CONFIGURATION MEMORY	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		65536 words		5		1	IN-LINE			2.54 mm	85 Cel	3-STATE	64KX1	64K	-40 Cel	TIN LEAD	DUAL	R-PDIP-T8		5.25 V	4.318 mm		7.62 mm	Not Qualified		65536 bit	4.75 V	4 WIRE INTERFACE TO FLEX 8000 DEVICES	e0					9.398 mm
EPC1064LI20	Altera	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	MOS	J BEND	SERIAL	SYNCHRONOUS		65536 words	COMMON	5	5	1	CHIP CARRIER	LDCC20,.4SQ	OTP ROMs	1.27 mm	85 Cel	3-STATE	64KX1	64K	-40 Cel	TIN LEAD	QUAD	S-PQCC-J20	1	5.5 V	4.572 mm	4 MHz	8.9662 mm	Not Qualified		65536 bit	4.5 V	4 WIRE INTERFACE TO FLEX 8000 DEVICES	e0		220			8.9662 mm
EPC1213PM	Altera	CONFIGURATION MEMORY	MILITARY	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		212992 words		5		1	IN-LINE			2.54 mm	125 Cel	3-STATE	208KX1	208K	-55 Cel		DUAL	R-PDIP-T8		5.25 V	4.318 mm		7.62 mm	Not Qualified		212992 bit	4.75 V	4 WIRE INTERFACE TO FLEX 8000 DEVICES						9.398 mm
EPC1064LC20	Altera	CONFIGURATION MEMORY	COMMERCIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	MOS	J BEND	SERIAL	SYNCHRONOUS		65536 words	COMMON	5	5	1	CHIP CARRIER	LDCC20,.4SQ	OTP ROMs	1.27 mm	70 Cel	3-STATE	64KX1	64K	0 Cel	Tin/Lead (Sn/Pb)	QUAD	S-PQCC-J20	1	5.25 V	4.572 mm	4 MHz	8.9662 mm	Not Qualified		65536 bit	4.75 V	4 WIRE INTERFACE TO FLEX 8000 DEVICES	e0	20	220			8.9662 mm
EPC1064VPC8	Altera	CONFIGURATION MEMORY	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	MOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		65536 words	COMMON	3.3	3.3	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	70 Cel	3-STATE	64KX1	64K	0 Cel	TIN LEAD	DUAL	R-PDIP-T8	1	3.6 V	4.318 mm	6 MHz	7.62 mm	Not Qualified		65536 bit	3 V	4 WIRE INTERFACE TO FLEX 8000 DEVICES	e0		220			9.398 mm
EPC1064VPM	Altera	CONFIGURATION MEMORY	MILITARY	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		65536 words		3.3		1	IN-LINE			2.54 mm	125 Cel	3-STATE	64KX1	64K	-55 Cel		DUAL	R-PDIP-T8		3.6 V	4.318 mm		7.62 mm	Not Qualified		65536 bit	3 V	4 WIRE INTERFACE TO FLEX 8000 DEVICES						9.398 mm
EPC1VLC20	Altera	CONFIGURATION MEMORY	COMMERCIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	MOS	J BEND	SERIAL	SYNCHRONOUS		130812 words	COMMON	3.3	3.3	8	CHIP CARRIER	LDCC20,.4SQ	OTP ROMs	1.27 mm	70 Cel	3-STATE	130812X8	130812	0 Cel	TIN LEAD	QUAD	S-PQCC-J20		3.6 V	4.57 mm		8.9662 mm	Not Qualified		1046496 bit	3 V		e0		220			8.9662 mm
EPC1064VLCI20	Altera	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1		J BEND		SYNCHRONOUS		65536 words		3.3		1	CHIP CARRIER				85 Cel		64KX1	64K	-40 Cel		QUAD	S-PQCC-J20		3.6 V				Not Qualified		65536 bit	3 V
EPC1064VLI	Altera	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	SERIAL	SYNCHRONOUS		65536 words		3.3		1	CHIP CARRIER			1.27 mm	85 Cel	3-STATE	64KX1	64K	-40 Cel	TIN LEAD	QUAD	S-PQCC-J20		3.6 V	4.57 mm		8.9662 mm	Not Qualified		65536 bit	3 V	4 WIRE INTERFACE TO FLEX 8000 DEVICES	e0					8.9662 mm
EPCE4QC100N	Altera	CONFIGURATION MEMORY	COMMERCIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		4194304 words		3.3		1	FLATPACK			.65 mm	70 Cel		4MX1	4M	0 Cel	MATTE TIN	QUAD	R-PQFP-G100		3.6 V	3.4 mm		14 mm			4194304 bit	3 V		e3					20 mm
EPC16UC88	Altera	CONFIGURATION MEMORY	COMMERCIAL	88	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	90 mA	1048576 words		3.3	3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA88,8X12,32	Flash Memories	.8 mm	70 Cel		1MX16	1M	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B88	3	3.6 V	1.4 mm	66.7 MHz	8 mm	Not Qualified		16777216 bit	3 V		e0	20	235	NOR TYPE	.00015 Amp	11 mm

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.