Atmel EEPROM 103

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	I2C Control Byte	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
AT24C02-10SC	Atmel	EEPROM	COMMERCIAL	14	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	5		5	8	SMALL OUTLINE	SOP14,.25	EEPROMs	100	1.27 mm	70 Cel	OPEN-DRAIN	256X8	256	0 Cel		TIN LEAD	1010DDDR		DUAL	HARDWARE	R-PDSO-G14		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	10 ms	I2C	2048 bit	4.5 V	2-WIRE SERIAL INTERFACE		e0			.000018 Amp	8.65 mm
AT24C256-10PI-2.7	Atmel	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	32768 words	3		3/5	8	IN-LINE	DIP8,.3	EEPROMs	40	2.54 mm	85 Cel		32KX8	32K	-40 Cel		TIN LEAD	10100DDR		DUAL	HARDWARE	R-PDIP-T8		5.5 V	5.334 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified	10 ms	I2C	262144 bit	2.7 V	HARDWARE & SOFTWARE DATA PROTECTION; DATA RETENTION 40 YEARS		e0			.0000005 Amp	9.271 mm
AT28C010E-15TI	Atmel	EEPROM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	131072 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	EEPROMs		.5 mm	85 Cel	3-STATE	128KX8	128K	-40 Cel	NO	TIN LEAD			DUAL		R-PDSO-G32	3	5.5 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified	10 ms		1048576 bit	4.5 V	AUTOMATIC WRITE	128	e0		240	.0002 Amp	18.4 mm	150 ns	5	YES
AT28C16-20SC	Atmel	EEPROM	COMMERCIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	2048 words	5	NO	5	8	SMALL OUTLINE	SOP24,.4	EEPROMs	10	1.27 mm	70 Cel	3-STATE	2KX8	2K	0 Cel	NO	TIN LEAD			DUAL		R-PDSO-G24		5.5 V	2.65 mm	10000 Write/Erase Cycles		7.5 mm	Not Qualified	1 ms		16384 bit	4.5 V	AUTOMATIC WRITE; 10K ENDURANCE WRITE CYCLES; DATA RETENTION = 10 YEARS		e0			.0001 Amp	15.4 mm	200 ns	5	YES
AT28C16F-15PI	Atmel	EEPROM	INDUSTRIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	45 mA	2048 words	5	NO	5	8	IN-LINE	DIP24,.6	EEPROMs		2.54 mm	85 Cel	3-STATE	2KX8	2K	-40 Cel	NO	TIN LEAD			DUAL		R-PDIP-T24		5.5 V	5.59 mm	10000 Write/Erase Cycles		15.24 mm	Not Qualified	.2 ms		16384 bit	4.5 V	AUTOMATIC WRITE		e0			.0001 Amp	31.9 mm	150 ns	5	YES
AT28C64B-20JC	Atmel	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	40 mA	8192 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs	10	1.27 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	NO	TIN LEAD			QUAD		R-PQCC-J32	2	5.5 V	3.556 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms		65536 bit	4.5 V	100K ENDURANCE CYCLES; 10 YEARS DATA RETENTION; AUTOMATIC PAGE WRITE	64	e0		225	.0001 Amp	13.97 mm	200 ns	5	YES
AT28LV256-20JC	Atmel	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	15 mA	32768 words	3.3	YES	3.3	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	NO	TIN LEAD			QUAD		R-PQCC-J32	2	3.465 V	3.55 mm	10000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms		262144 bit	3.135 V	AUTOMATIC WRITE	64	e0		225	.00002 Amp	13.97 mm	200 ns	3	YES
AT17C128-10SI	Atmel	CONFIGURATION MEMORY	INDUSTRIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	131072 words	5		5	1	SMALL OUTLINE	SOP20,.4	EEPROMs		1.27 mm	85 Cel	3-STATE	128KX1	128K	-40 Cel		TIN LEAD			DUAL		R-PDSO-G20		5.5 V	2.65 mm			7.5 mm	Not Qualified			131072 bit	4.5 V			e0			.002 Amp	12.8 mm	55 ns
AT17C256-10PI	Atmel	CONFIGURATION MEMORY	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	10 mA	262144 words	5		5	1	IN-LINE	DIP8,.3	EEPROMs		2.54 mm	85 Cel	3-STATE	256KX1	256K	-40 Cel		TIN LEAD			DUAL		R-PDIP-T8		5.5 V	4.318 mm		12.5 MHz	7.62 mm	Not Qualified			262144 bit	4.5 V			e0			.00015 Amp	9.398 mm	55 ns
AT17LV256-10PC	Atmel	CONFIGURATION MEMORY	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	5 mA	262144 words	3.3		3.3	1	IN-LINE	DIP8,.3	EEPROMs		2.54 mm	70 Cel	3-STATE	256KX1	256K	0 Cel		TIN LEAD			DUAL		R-PDIP-T8	1	3.6 V	5.334 mm		10 MHz	7.62 mm	Not Qualified			262144 bit	3 V	IT CAN OPERATES ON 4.75-5.25 RANGE SUPPLY VOLTAGE ALSO		e0			.00005 Amp	9.271 mm	75 ns
AT24C01A-10SA-2.7C	Atmel	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words	3		3/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	125 Cel		128X8	128	-40 Cel		TIN LEAD	1010DDDR		DUAL	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	1024 bit	2.7 V			e0			.000004 Amp	4.9 mm
AT24C01A-10SI-2.7	Atmel	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words	3		3/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	85 Cel	OPEN-DRAIN	128X8	128	-40 Cel		Tin/Lead (Sn/Pb)	1010DDDR		DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	1024 bit	2.7 V	DATA RETENTION = 100 YEARS		e0	30	240	.000004 Amp	4.9 mm
AT24C02B-10PU-1.8	Atmel	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	256 words	2.5		2/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	85 Cel		256X8	256	-40 Cel		MATTE TIN	1010DDDR		DUAL	HARDWARE	R-PDIP-T8	1	5.5 V	5.334 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified	5 ms	I2C	2048 bit	1.8 V			e3		260	.000003 Amp	9.271 mm
AT24C02B-10TU-1.8	Atmel	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	2.5		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	100	.65 mm	85 Cel		256X8	256	-40 Cel		MATTE TIN	1010DDDR		DUAL	HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified	5 ms	I2C	2048 bit	1.8 V			e3		260	.000003 Amp	4.4 mm
AT24C04-10SC	Atmel	EEPROM	COMMERCIAL	14	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	512 words	5		5	8	SMALL OUTLINE	SOP14,.25	EEPROMs	100	1.27 mm	70 Cel	OPEN-DRAIN	512X8	512	0 Cel		TIN LEAD	1010DDMR		DUAL	HARDWARE	R-PDSO-G14		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	10 ms	I2C	4096 bit	4.5 V	2-WIRE SERIAL INTERFACE		e0			.000018 Amp	8.65 mm
AT24C04N-10SI-1.8	Atmel	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	512 words	2.5		2/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	85 Cel	OPEN-DRAIN	512X8	512	-40 Cel		Tin/Lead (Sn/Pb)	1010DDMR		DUAL	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	5 ms	I2C	4096 bit	1.8 V	DATA RETENTION = 100 YEARS		e0	30	240	.000003 Amp	4.9 mm
AT24C08N-10SI	Atmel	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	1024 words	5		5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	85 Cel	OPEN-DRAIN	1KX8	1K	-40 Cel		Tin/Lead (Sn/Pb)			DUAL		R-PDSO-G8		5.5 V	1.73 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	10 ms	I2C	8192 bit	4.5 V	2-WIRE SERIAL INTERFACE		e0	30	240	.000018 Amp	4.89 mm
AT24C1024-10PI-2.7	Atmel	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	5 mA	131072 words	3		3/5	8	IN-LINE	DIP8,.3	EEPROMs	40	2.54 mm	85 Cel		128KX8	128K	-40 Cel		TIN LEAD	10100DMR		DUAL	HARDWARE	R-PDIP-T8	1	5.5 V	5.334 mm	100000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	10 ms	I2C	1048576 bit	2.7 V			e0			.000003 Amp	9.271 mm
AT24C128T1-10TI-2.7	Atmel	EEPROM	INDUSTRIAL	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	16384 words	3		3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP14,.25	EEPROMs	40	.65 mm	85 Cel		16KX8	16K	-40 Cel		TIN LEAD	10100DDR		DUAL	HARDWARE	R-PDSO-G14	2	5.5 V	1.2 mm	100000 Write/Erase Cycles	1 MHz	4.4 mm	Not Qualified	10 ms	I2C	131072 bit	2.7 V	HARDWARE & SOFTWARE DATA PROTECTION; DATA RETENTION 40 YEARS		e0		240	.0000005 Amp	5 mm
AT24C16-10PC-2.7	Atmel	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	2048 words	3.3		3/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	70 Cel	OPEN-DRAIN	2KX8	2K	0 Cel		TIN LEAD	1010MMMR		DUAL	HARDWARE	R-PDIP-T8		5.5 V	5.33 mm	1000000 Write/Erase Cycles	.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	16384 bit	2.7 V	2-WIRE SERIAL INTERFACE		e0			.000004 Amp	9.59 mm
AT24C16N-10SI-2.7	Atmel	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	2048 words	3		3/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	85 Cel	OPEN-DRAIN	2KX8	2K	-40 Cel		TIN LEAD	1010MMMR		DUAL	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	16384 bit	2.7 V	DATA RETENTION = 100 YEARS		e0			.000004 Amp	4.9 mm
AT24C256B-10PU-1.8	Atmel	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	32768 words	2.5		2/3.3	8	IN-LINE	DIP8,.3	EEPROMs	40	2.54 mm	85 Cel		32KX8	32K	-40 Cel		MATTE TIN	1010DDDR		DUAL	HARDWARE/SOFTWARE	R-PDIP-T8	1	3.6 V	5.334 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified	5 ms	I2C	262144 bit	1.8 V			e3			.000001 Amp	9.271 mm
AT24C512-10TU-1.8	Atmel	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		65536 words	2.7		2/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	40	.65 mm	85 Cel		64KX8	64K	-40 Cel		MATTE TIN	10100DDR		DUAL	HARDWARE	R-PDSO-G8	1	3.6 V	1.2 mm	100000 Write/Erase Cycles	.1 MHz	3 mm	Not Qualified	20 ms	I2C	524288 bit	1.8 V			e3		260	.000001 Amp	4.4 mm
AT24C64-10PC	Atmel	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	8192 words	5		5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	70 Cel	OPEN-DRAIN	8KX8	8K	0 Cel		TIN LEAD	1010DDDR		DUAL	HARDWARE	R-PDIP-T8		5.5 V	5.33 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	10 ms	I2C	65536 bit	4.5 V	DATA RETENTION: 100 YEARS		e0			.000035 Amp	9.59 mm
AT24C64A-10TI-2.7	Atmel	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words	3		3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	100	.65 mm	85 Cel		8KX8	8K	-40 Cel		TIN LEAD	1010DDDR		DUAL	HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	20 ms	I2C	65536 bit	2.7 V			e0			.000002 Amp	4.4 mm
AT24C64AN-10SU-1.8	Atmel	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words	2.5		2/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	85 Cel		8KX8	8K	-40 Cel		Matte Tin (Sn)	1010DDDR		DUAL	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	20 ms	I2C	65536 bit	1.8 V			e3	40	260	.000001 Amp	4.9 mm
AT24C64AY6-10YH-1.8	Atmel	EEPROM	INDUSTRIAL	8	HVSSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		8192 words	2.5			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE, SHRINK PITCH				.5 mm	85 Cel		8KX8	8K	-40 Cel		NICKEL PALLADIUM GOLD			DUAL		R-XDSO-N8		5.5 V	.6 mm		.4 MHz	2 mm	Not Qualified	20 ms	I2C	65536 bit	1.8 V			e4				3 mm
AT24HC02B-10TU-1.8	Atmel	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		256 words	2.5			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	85 Cel		256X8	256	-40 Cel		MATTE TIN			DUAL		R-PDSO-G8	1	5.5 V	1.2 mm			3 mm	Not Qualified	5 ms	I2C	2048 bit	1.8 V			e3				4.4 mm
AT24HC02BN-10SU-1.8	Atmel	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		256 words	2.5			8	SMALL OUTLINE				1.27 mm	85 Cel		256X8	256	-40 Cel		MATTE TIN			DUAL		R-PDSO-G8	1	5.5 V	1.75 mm			3.9 mm	Not Qualified	5 ms	I2C	2048 bit	1.8 V			e3		260		4.9 mm
AT25010-10PC	Atmel	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	6 mA	128 words	5		5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	70 Cel	3-STATE	128X8	128	0 Cel		TIN LEAD			DUAL	HARDWARE/SOFTWARE	R-PDIP-T8		5.5 V	5.33 mm	1000000 Write/Erase Cycles	3 MHz	7.62 mm	Not Qualified	5 ms	SPI	1024 bit	4.5 V	4-WIRE SERIAL INTERFACE		e0			.0001 Amp	9.59 mm
AT25040AN-10SI-2.7	Atmel	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	8 mA	512 words	5		3/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	85 Cel		512X8	512	-40 Cel		Tin/Lead (Sn/Pb)			DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	10 MHz	3.9 mm	Not Qualified	5 ms	SPI	4096 bit	2.7 V			e0	30	240	.000001 Amp	4.9 mm
AT25040N-10SI-2.7	Atmel	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	6 mA	512 words	5		3/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	85 Cel	3-STATE	512X8	512	-40 Cel		TIN LEAD			DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	2.1 MHz	3.9 mm	Not Qualified	10 ms	SPI	4096 bit	2.7 V	HARDWARE AND SOFTWARE DATA PROTECTION		e0			.000005 Amp	4.9 mm
AT25128N-10SC-2.7	Atmel	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	16384 words	3.3		3/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	200	1.27 mm	70 Cel		16KX8	16K	0 Cel		TIN LEAD			DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	100000 Write/Erase Cycles	2.1 MHz	3.9 mm	Not Qualified	10 ms	SPI	131072 bit	2.7 V	HARDWARE & SOFTWARE DATA PROTECTION; DATA RETENTION > 200 YEARS; 100K ENDURANCE WRITE CYCLES		e0			.000002 Amp	4.9 mm
AT25128W-10SC	Atmel	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	16384 words	5		5	8	SMALL OUTLINE	SOP8,.3	EEPROMs	200	1.27 mm	70 Cel		16KX8	16K	0 Cel		TIN LEAD			DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	2.03 mm	100000 Write/Erase Cycles	3 MHz	5.27 mm	Not Qualified	5 ms	SPI	131072 bit	4.5 V	HARDWARE & SOFTWARE DATA PROTECTION; DATA RETENTION > 200 YEARS; 100K ENDURANCE WRITE CYCLES		e0		240	.000005 Amp	5.31 mm
AT25256AW-10SQ-2.7	Atmel	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		32768 words	5			8	SMALL OUTLINE				1.27 mm	85 Cel		32KX8	32K	-40 Cel					DUAL		R-PDSO-G8		5.5 V	2.16 mm		10 MHz	5.24 mm		5 ms	SPI	262144 bit	2.7 V							5.29 mm
AT25256T2-10TI	Atmel	EEPROM	INDUSTRIAL	20	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	32768 words	5		5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20,.25	EEPROMs	200	.65 mm	85 Cel		32KX8	32K	-40 Cel		TIN LEAD			DUAL	HARDWARE/SOFTWARE	R-PDSO-G20	2	5.5 V	1.2 mm	100000 Write/Erase Cycles	3 MHz	4.4 mm	Not Qualified	5 ms	SPI	262144 bit	4.5 V	HARDWARE & SOFTWARE DATA PROTECTION; DATA RETENTION > 200 YEARS; 100K ENDURANCE WRITE CYCLES		e0		240	.000005 Amp	6.5 mm
AT28BV64B-25JC	Atmel	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	15 mA	8192 words	3	YES	3.3	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs	10	1.27 mm	70 Cel		8KX8	8K	0 Cel	NO	Tin/Lead (Sn/Pb)			QUAD		R-PQCC-J32	2	3.6 V	3.556 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms		65536 bit	2.7 V	100K ENDURANCE CYCLES; DATA RETENTION = 10 YEARS	64	e0	30	225	.00002 Amp	13.97 mm	250 ns	3	YES
AT28C040-20LI	Atmel	EEPROM	INDUSTRIAL	44	QCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	50 mA	524288 words	5	YES	5	8	CHIP CARRIER	LCC44,.65SQ	EEPROMs		1.27 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel	NO	TIN LEAD			QUAD		S-CQCC-N44	1	5.5 V	2.74 mm			16.55 mm	Not Qualified	10 ms		4194304 bit	4.5 V	AUTOMATIC WRITE	256	e0			.003 Amp	16.55 mm	200 ns	5	YES
AT28C16-25TC	Atmel	EEPROM	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	2048 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	EEPROMs	10	.55 mm	70 Cel	3-STATE	2KX8	2K	0 Cel	NO	TIN LEAD		YES	DUAL		R-PDSO-G28	3	5.5 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified			16384 bit	4.5 V	AUTOMATIC WRITE; 100K ENDURANCE WRITE CYCLES; DATA RETENTION > 10 YEARS		e0		240	.0001 Amp	11.8 mm	250 ns	5	YES
AT28C256-15JI	Atmel	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	MIL-STD-883	J BEND	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	NO	TIN LEAD			QUAD		R-PQCC-J32	2	5.5 V	3.556 mm	10000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms		262144 bit	4.5 V	AUTOMATIC WRITE	64	e0		225	.0002 Amp	13.97 mm	150 ns	5	YES
AT28C256-20JC	Atmel	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	MIL-STD-883	J BEND	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	NO	TIN LEAD			QUAD		R-PQCC-J32	2	5.5 V	3.556 mm	10000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms		262144 bit	4.5 V	AUTOMATIC WRITE	64	e0		225	.0002 Amp	13.97 mm	200 ns	5	YES
AT28C256-25TC	Atmel	EEPROM	COMMERCIAL	28	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		50 mA	32768 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP28,.53,22	EEPROMs		.55 mm	70 Cel		32KX8	32K	0 Cel	NO	TIN LEAD			DUAL		R-PDSO-G28	3			10000 Write/Erase Cycles			Not Qualified	10 ms		262144 bit			64	e0		240	.0002 Amp		250 ns		YES
AT28C256E-15SC	Atmel	EEPROM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	MIL-STD-883	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	5	YES	5	8	SMALL OUTLINE	SOP28,.4	EEPROMs		1.27 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	NO	TIN LEAD			DUAL		R-PDSO-G28	2	5.5 V	2.65 mm	100000 Write/Erase Cycles		7.5 mm	Not Qualified	10 ms		262144 bit	4.5 V	AUTOMATIC WRITE	64	e0		240	.0002 Amp	17.9 mm	150 ns	5	YES
AT28C256E-20JC	Atmel	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	MIL-STD-883	J BEND	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	NO	TIN LEAD			QUAD		R-PQCC-J32	2	5.5 V	3.556 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms		262144 bit	4.5 V	AUTOMATIC WRITE	64	e0		225	.0002 Amp	13.97 mm	200 ns	5	YES
AT28C256F-20TI	Atmel	EEPROM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	MIL-STD-883	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	EEPROMs		.55 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	NO	TIN LEAD			DUAL		R-PDSO-G28	3	5.5 V	1.2 mm	10000 Write/Erase Cycles		8 mm	Not Qualified	3 ms		262144 bit	4.5 V	AUTOMATIC WRITE	64	e0		240	.0002 Amp	11.8 mm	200 ns	5	YES
AT28C64B-20SC	Atmel	EEPROM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	8192 words	5	YES	5	8	SMALL OUTLINE	SOP28,.4	EEPROMs	10	1.27 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	NO	TIN LEAD			DUAL		R-PDSO-G28	2	5.5 V	2.65 mm	100000 Write/Erase Cycles		7.5 mm	Not Qualified	10 ms		65536 bit	4.5 V	100K ENDURANCE CYCLES; 10 YEARS DATA RETENTION; AUTOMATIC PAGE WRITE	64	e0		240	.0001 Amp	17.9 mm	200 ns	5	YES
AT28C64B-25JC	Atmel	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	40 mA	8192 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs	10	1.27 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	NO	TIN LEAD			QUAD		R-PQCC-J32	2	5.5 V	3.556 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms		65536 bit	4.5 V	100K ENDURANCE CYCLES; 10 YEARS DATA RETENTION; AUTOMATIC PAGE WRITE	64	e0		225	.0001 Amp	13.97 mm	250 ns	5	YES
AT28HC256-12JI	Atmel	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	MIL-STD-883	J BEND	PARALLEL	ASYNCHRONOUS	80 mA	32768 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	NO	TIN LEAD			QUAD		R-PQCC-J32	2	5.5 V	3.556 mm	10000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms		262144 bit	4.5 V	AUTOMATIC WRITE	64	e0		225	.0003 Amp	13.97 mm	120 ns	5	YES

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.