Diodes Incorporated EEPROM 121

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	I2C Control Byte	Terminal Position	Write Protection	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Standby Current	Length	Programming Voltage (V)
AM93LC56VGS8	Diodes Incorporated	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	2048 words	3	3/5	1	SMALL OUTLINE	SOP8,.25	8	EEPROMs	40	1.27 mm	125 Cel	2KX1	2K	-40 Cel	Tin/Lead (Sn/Pb)		DUAL	SOFTWARE	R-PDSO-G8	5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	10 ms	MICROWIRE	2048 bit	2.7 V		e0	.00001 Amp	5.05 mm	3
AM93LC86IS	Diodes Incorporated	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	1024 words	3	3/5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	40	1.27 mm	85 Cel	1KX16	1K	-40 Cel			DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	10 ms	MICROWIRE	16384 bit	2.7 V			.00001 Amp	5.05 mm	3
AM93LC66ISA	Diodes Incorporated	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	4096 words	3	3/5	1	SMALL OUTLINE	SOP8,.25	8	EEPROMs	40	1.27 mm	85 Cel	4KX1	4K	-40 Cel			DUAL	SOFTWARE	R-PDSO-G8	5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	10 ms	MICROWIRE	4096 bit	2.7 V			.000001 Amp	5.05 mm	3
AM24LC04TS	Diodes Incorporated	EEPROM	COMMERCIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	512 words	3	3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	40	.65 mm	70 Cel	512X8	512	0 Cel	Tin/Lead (Sn/Pb)	1010DDMR	DUAL	HARDWARE	R-PDSO-G8	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.1 MHz	3.05 mm	Not Qualified	10 ms	I2C	4096 bit	2.7 V	40 YEARS DATA RETENTION	e0	.000001 Amp	4.4 mm
AM93LC56IS	Diodes Incorporated	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	2048 words	3	3/5	1	SMALL OUTLINE	SOP8,.25	8	EEPROMs	40	1.27 mm	85 Cel	2KX1	2K	-40 Cel	Tin/Lead (Sn/Pb)		DUAL	SOFTWARE	R-PDSO-G8	5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	10 ms	MICROWIRE	2048 bit	2.7 V		e0	.00001 Amp	5.05 mm	3
AM24LC04SA	Diodes Incorporated	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	512 words	3	3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	70 Cel	512X8	512	0 Cel	Tin/Lead (Sn/Pb)	1010DDMR	DUAL	HARDWARE	R-PDSO-G8	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	10 ms	I2C	4096 bit	2.7 V	40 YEARS DATA RETENTION	e0	.000001 Amp	5.05 mm
AM24LC21ISA	Diodes Incorporated	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words	3	3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel	128X8	128	-40 Cel		1010000R	DUAL	HARDWARE	R-PDSO-G8	5.5 V	1.73 mm	1000000 Write/Erase Cycles	.1 MHz	3.91 mm	Not Qualified	10 ms	I2C	1024 bit	2.5 V			.00003 Amp	4.85 mm
AM93LC66S	Diodes Incorporated	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	4096 words	3	3/5	1	SMALL OUTLINE	SOP8,.25	8	EEPROMs	40	1.27 mm	70 Cel	4KX1	4K	0 Cel			DUAL	SOFTWARE	R-PDSO-G8	5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	10 ms	MICROWIRE	4096 bit	2.7 V			.000001 Amp	5.05 mm	3
AM24LC04VN	Diodes Incorporated	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	512 words	3	3/5	8	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	125 Cel	512X8	512	-40 Cel	Tin/Lead (Sn/Pb)	1010DDMR	DUAL	HARDWARE	R-PDIP-T8	5.5 V	5.33 mm	1000000 Write/Erase Cycles	.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	4096 bit	2.7 V	40 YEARS DATA RETENTION	e0	.000001 Amp	9.27 mm
AM24LC04VTSA	Diodes Incorporated	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	512 words	3	3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	40	.65 mm	125 Cel	512X8	512	-40 Cel	Tin/Lead (Sn/Pb)	1010DDMR	DUAL	HARDWARE	R-PDSO-G8	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.1 MHz	3.05 mm	Not Qualified	10 ms	I2C	4096 bit	2.7 V	40 YEARS DATA RETENTION	e0	.000001 Amp	4.4 mm
AM24LC21BIS	Diodes Incorporated	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words	3	3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel	128X8	128	-40 Cel		1010000R	DUAL		R-PDSO-G8	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	10 ms	I2C	1024 bit	2.5 V			.00003 Amp	5.05 mm
AM93LC46VGSA	Diodes Incorporated	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	1024 words	3	3/5	1	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	125 Cel	1KX1	1K	-40 Cel	Tin/Lead (Sn/Pb)		DUAL	SOFTWARE	R-PDSO-G8	5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	10 ms	MICROWIRE	1024 bit	2.7 V		e0	.00001 Amp	5.05 mm	3
AM93LC86ITS	Diodes Incorporated	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	1024 words	3	3/5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	8	EEPROMs	40	.65 mm	85 Cel	1KX16	1K	-40 Cel			DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	5.5 V	1.2 mm	1000000 Write/Erase Cycles	1 MHz	3.05 mm	Not Qualified	10 ms	MICROWIRE	16384 bit	2.7 V			.00001 Amp	4.4 mm	3
AM93LC46IGSA	Diodes Incorporated	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	1024 words	3	3/5	1	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel	1KX1	1K	-40 Cel	Tin/Lead (Sn/Pb)		DUAL	SOFTWARE	R-PDSO-G8	5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	10 ms	MICROWIRE	1024 bit	2.7 V		e0	.00001 Amp	5.05 mm	3
AM93LC46VS	Diodes Incorporated	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	1024 words	3	3/5	1	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	125 Cel	1KX1	1K	-40 Cel	Tin/Lead (Sn/Pb)		DUAL	SOFTWARE	R-PDSO-G8	5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	10 ms	MICROWIRE	1024 bit	2.7 V		e0	.00001 Amp	5.05 mm	3
AM93LC46S	Diodes Incorporated	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	1024 words	3	3/5	1	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	70 Cel	1KX1	1K	0 Cel	Tin/Lead (Sn/Pb)		DUAL	SOFTWARE	R-PDSO-G8	5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	10 ms	MICROWIRE	1024 bit	2.7 V		e0	.00001 Amp	5.05 mm	3
AM24LC08IN	Diodes Incorporated	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	1024 words	3	3/5	8	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	85 Cel	1KX8	1K	-40 Cel		1010DDDR	DUAL	HARDWARE	R-PDIP-T8	5.5 V	5.33 mm	1000000 Write/Erase Cycles	.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	8192 bit	2.7 V	40 YEARS DATA RETENTION		.000001 Amp	9.27 mm
AM93LC46IN	Diodes Incorporated	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	1024 words	3	3/5	1	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	85 Cel	1KX1	1K	-40 Cel	Tin/Lead (Sn/Pb)		DUAL	SOFTWARE	R-PDIP-T8	5.5 V	5.33 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified	10 ms	MICROWIRE	1024 bit	2.7 V		e0	.00001 Amp	9.27 mm	3
AM24LC16VN	Diodes Incorporated	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	2048 words	3	3/5	8	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	125 Cel	2KX8	2K	-40 Cel		1010DDDR	DUAL	HARDWARE	R-PDIP-T8	5.5 V	5.33 mm	1000000 Write/Erase Cycles	.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	16384 bit	2.7 V	40 YEARS DATA RETENTION		.000001 Amp	9.27 mm
AM24LC16IS	Diodes Incorporated	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	2048 words	3	3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel	2KX8	2K	-40 Cel		1010DDDR	DUAL	HARDWARE	R-PDSO-G8	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	10 ms	I2C	16384 bit	2.7 V	40 YEARS DATA RETENTION		.000001 Amp	5.05 mm
AM24LC02N	Diodes Incorporated	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	256 words	3	3/5	8	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	70 Cel	256X8	256	0 Cel		1010DDDR	DUAL	HARDWARE	R-PDIP-T8	5.5 V		1000000 Write/Erase Cycles	.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	2048 bit	2.7 V	40 YEARS DATA RETENTION		.000001 Amp	9.27 mm
AM24LC08IS	Diodes Incorporated	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	1024 words	3	3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel	1KX8	1K	-40 Cel		1010DDDR	DUAL	HARDWARE	R-PDSO-G8	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	10 ms	I2C	8192 bit	2.7 V	40 YEARS DATA RETENTION		.000001 Amp	5.05 mm
AM24LC08N	Diodes Incorporated	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	1024 words	3	3/5	8	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	70 Cel	1KX8	1K	0 Cel		1010DDDR	DUAL	HARDWARE	R-PDIP-T8	5.5 V	5.33 mm	1000000 Write/Erase Cycles	.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	8192 bit	2.7 V	40 YEARS DATA RETENTION		.000001 Amp	9.27 mm
AM93LC66IN	Diodes Incorporated	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	4096 words	3	3/5	1	IN-LINE	DIP8,.3	8	EEPROMs	40	2.54 mm	85 Cel	4KX1	4K	-40 Cel			DUAL	SOFTWARE	R-PDIP-T8	5.5 V	5.33 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified	10 ms	MICROWIRE	4096 bit	2.7 V			.000001 Amp	9.27 mm	3
AM93LC86TS	Diodes Incorporated	EEPROM	COMMERCIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	1024 words	3	3/5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	8	EEPROMs	40	.65 mm	70 Cel	1KX16	1K	0 Cel			DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	5.5 V	1.2 mm	1000000 Write/Erase Cycles	1 MHz	3.05 mm	Not Qualified	10 ms	MICROWIRE	16384 bit	2.7 V			.00001 Amp	4.4 mm	3
AM24LC02VSA	Diodes Incorporated	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	3	3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	125 Cel	256X8	256	-40 Cel		1010DDDR	DUAL	HARDWARE	R-PDSO-G8	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	10 ms	I2C	2048 bit	2.7 V	40 YEARS DATA RETENTION		.000001 Amp	5.05 mm
AM24LC04VSA	Diodes Incorporated	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	512 words	3	3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	125 Cel	512X8	512	-40 Cel	Tin/Lead (Sn/Pb)	1010DDMR	DUAL	HARDWARE	R-PDSO-G8	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	10 ms	I2C	4096 bit	2.7 V		e0	.000001 Amp	5.05 mm
AM24LC04IS	Diodes Incorporated	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	512 words	3	3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel	512X8	512	-40 Cel	Tin/Lead (Sn/Pb)	1010DDMR	DUAL	HARDWARE	R-PDSO-G8	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	10 ms	I2C	4096 bit	2.7 V	40 YEARS DATA RETENTION	e0	.000001 Amp	5.05 mm
AM24LC16ISA	Diodes Incorporated	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	2048 words	3	3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel	2KX8	2K	-40 Cel		1010DDDR	DUAL	HARDWARE	R-PDSO-G8	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	10 ms	I2C	16384 bit	2.7 V	40 YEARS DATA RETENTION		.000001 Amp	5.05 mm
AM24LC04IN	Diodes Incorporated	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	512 words	3	3/5	8	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	85 Cel	512X8	512	-40 Cel	Tin/Lead (Sn/Pb)	1010DDMR	DUAL	HARDWARE	R-PDIP-T8	5.5 V	5.33 mm	1000000 Write/Erase Cycles	.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	4096 bit	2.7 V	40 YEARS DATA RETENTION	e0	.000001 Amp	9.27 mm
AM93LC56IN	Diodes Incorporated	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	2048 words	3	3/5	1	IN-LINE	DIP8,.3	8	EEPROMs	40	2.54 mm	85 Cel	2KX1	2K	-40 Cel	Tin/Lead (Sn/Pb)		DUAL	SOFTWARE	R-PDIP-T8	5.5 V	5.33 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified	10 ms	MICROWIRE	2048 bit	2.7 V		e0	.00001 Amp	9.27 mm	3
AM24LC02VTS	Diodes Incorporated	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	3	3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	40	.65 mm	125 Cel	256X8	256	-40 Cel		1010DDDR	DUAL	HARDWARE	R-PDSO-G8	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.1 MHz	3.05 mm	Not Qualified	10 ms	I2C	2048 bit	2.7 V	40 YEARS DATA RETENTION		.000001 Amp	4.4 mm
AM93LC46ITS	Diodes Incorporated	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	1024 words	3	3/5	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	40	.65 mm	85 Cel	1KX1	1K	-40 Cel	Tin/Lead (Sn/Pb)		DUAL	SOFTWARE	R-PDSO-G8	5.5 V	1.2 mm	1000000 Write/Erase Cycles	1 MHz	3.05 mm	Not Qualified	10 ms	MICROWIRE	1024 bit	2.7 V		e0	.00001 Amp	4.4 mm	3
AM24LC04VTS	Diodes Incorporated	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	512 words	3	3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	40	.65 mm	125 Cel	512X8	512	-40 Cel	Tin/Lead (Sn/Pb)	1010DDMR	DUAL	HARDWARE	R-PDSO-G8	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.1 MHz	3.05 mm	Not Qualified	10 ms	I2C	4096 bit	2.7 V		e0	.000001 Amp	4.4 mm
AM93LC66IS	Diodes Incorporated	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	4096 words	3	3/5	1	SMALL OUTLINE	SOP8,.25	8	EEPROMs	40	1.27 mm	85 Cel	4KX1	4K	-40 Cel			DUAL	SOFTWARE	R-PDSO-G8	5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	10 ms	MICROWIRE	4096 bit	2.7 V			.000001 Amp	5.05 mm	3
AM24LC16IN	Diodes Incorporated	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	2048 words	3	3/5	8	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	85 Cel	2KX8	2K	-40 Cel		1010DDDR	DUAL	HARDWARE	R-PDIP-T8	5.5 V	5.33 mm	1000000 Write/Erase Cycles	.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	16384 bit	2.7 V	40 YEARS DATA RETENTION		.000001 Amp	9.27 mm
AM24LC02IN	Diodes Incorporated	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	256 words	3	3/5	8	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	85 Cel	256X8	256	-40 Cel		1010DDDR	DUAL	HARDWARE	R-PDIP-T8	5.5 V		1000000 Write/Erase Cycles	.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	2048 bit	2.7 V	40 YEARS DATA RETENTION		.000001 Amp	9.27 mm
AM93LC66VGS	Diodes Incorporated	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	4096 words	3	3/5	1	SMALL OUTLINE	SOP8,.25	8	EEPROMs	40	1.27 mm	125 Cel	4KX1	4K	-40 Cel			DUAL	SOFTWARE	R-PDSO-G8	5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	10 ms	MICROWIRE	4096 bit	2.7 V			.000001 Amp	5.05 mm	3
AM24LC16VSA	Diodes Incorporated	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	2048 words	3	3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	125 Cel	2KX8	2K	-40 Cel		1010DDDR	DUAL	HARDWARE	R-PDSO-G8	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	10 ms	I2C	16384 bit	2.7 V	40 YEARS DATA RETENTION		.000001 Amp	5.05 mm
AM93LC46TSA	Diodes Incorporated	EEPROM	COMMERCIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	1024 words	3	3/5	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	40	.65 mm	70 Cel	1KX1	1K	0 Cel	Tin/Lead (Sn/Pb)		DUAL	SOFTWARE	R-PDSO-G8	5.5 V	1.2 mm	1000000 Write/Erase Cycles	1 MHz	3.05 mm	Not Qualified	10 ms	MICROWIRE	1024 bit	2.7 V		e0	.00001 Amp	4.4 mm	3
AM24LC04ITS	Diodes Incorporated	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	512 words	3	3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	40	.65 mm	85 Cel	512X8	512	-40 Cel	Tin/Lead (Sn/Pb)	1010DDMR	DUAL	HARDWARE	R-PDSO-G8	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.1 MHz	3.05 mm	Not Qualified	10 ms	I2C	4096 bit	2.7 V	40 YEARS DATA RETENTION	e0	.000001 Amp	4.4 mm
AM24LC16VS	Diodes Incorporated	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	2048 words	3	3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	125 Cel	2KX8	2K	-40 Cel		1010DDDR	DUAL	HARDWARE	R-PDSO-G8	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	10 ms	I2C	16384 bit	2.7 V	40 YEARS DATA RETENTION		.000001 Amp	5.05 mm
AM24LC02TSA	Diodes Incorporated	EEPROM	COMMERCIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	3	3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	40	.65 mm	70 Cel	256X8	256	0 Cel		1010DDDR	DUAL	HARDWARE	R-PDSO-G8	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.1 MHz	3.05 mm	Not Qualified	10 ms	I2C	2048 bit	2.7 V	40 YEARS DATA RETENTION		.000001 Amp	4.4 mm
AM24LC04S	Diodes Incorporated	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	512 words	3	3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	70 Cel	512X8	512	0 Cel	Tin/Lead (Sn/Pb)	1010DDMR	DUAL	HARDWARE	R-PDSO-G8	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	10 ms	I2C	4096 bit	2.7 V	40 YEARS DATA RETENTION	e0	.000001 Amp	5.05 mm
AM24LC08S	Diodes Incorporated	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	1024 words	3	3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	70 Cel	1KX8	1K	0 Cel		1010DDDR	DUAL	HARDWARE	R-PDSO-G8	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	10 ms	I2C	8192 bit	2.7 V	40 YEARS DATA RETENTION		.000001 Amp	5.05 mm
AM93LC46IS	Diodes Incorporated	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	1024 words	3	3/5	1	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel	1KX1	1K	-40 Cel	Tin/Lead (Sn/Pb)		DUAL	SOFTWARE	R-PDSO-G8	5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	10 ms	MICROWIRE	1024 bit	2.7 V		e0	.00001 Amp	5.05 mm	3
AM24LC08VS	Diodes Incorporated	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	1024 words	3	3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	125 Cel	1KX8	1K	-40 Cel		1010DDDR	DUAL	HARDWARE	R-PDSO-G8	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	10 ms	I2C	8192 bit	2.7 V	40 YEARS DATA RETENTION		.000001 Amp	5.05 mm
AM24LC02S	Diodes Incorporated	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	3	3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	70 Cel	256X8	256	0 Cel		1010DDDR	DUAL	HARDWARE	R-PDSO-G8	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	10 ms	I2C	2048 bit	2.7 V	40 YEARS DATA RETENTION		.000001 Amp	5.05 mm

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.